电子科学与技术专业英语资料

电子科学与技术专业英语复习资料
一，单词翻译（20 分）
heterojunction collector junction
发射结emitter junction 基区base region
肖特基接触schottky contact 复合recombination
固相扩散Solid phase diffusion 多晶硅polycrystalline
微波器件microwave devices 损耗depletion
漏电流leakage current 多数载流子majority - carrier
少数载流子minority - carrier 封装package
电阻resistance 电流current
电流密度current density 电压voltage
输入端input port 输出端output port
近红外near-infrared 紫外ultraviolet
传输模式transport form 饱和电流saturation currents
光学吸收optical absorption 受激辐射stimulated emission
自发辐射spontaneous emission
二、阅读理解（20 分）
三、段落翻译（40 分）
1、The unfolding story of solid-state electronics can be told rather completely in terms of evolving fabrication technology, constantly expanding the number of options available to the device and integrated-circuit designer. It was for technological reasons that an early and important kind of BJT was a germanium PNP device. The term PNP labels the conductivity types of the three regions within a BJT, regions separated by two PN junctions. In later years, and again partly for technological reasons, the dominant BJT was a silicon NPN device. In integrated circuits today, the combination of silicon NPN and PNP devices is a growing practice because the resulting complementary circuits have important power-dissipation and performance advantages. For convenience and consistency, however, and because of its continuing importance, the silicon NPN BJT will be the vehicle for this chapter.
根据制备技术的进化，给器件和集成电路设计者的可用选择数不断扩展，使得固态电子学
的演变故事可以描述得更为完整。

由于技术原因，早期重要的晶体管是锗PNP 器件，PNP 型晶
体管的导电区有三个区，这些区被两个PN 结分开。

在随后的几年，又由于部分技术的原因，占优势的晶体管是硅NPN 器件。

在集成电路的今天，硅NPN 和PNP 器件的组合成为常用
的形式，因为有效互补电路具有重要的功耗和性能优势。

然而，为了方便和一致性，以及因
为连续性的重要性，NPN 型硅晶体管将是在这章的主要讨论内容。

2 、The essential structure of a BJT is represented in Figure 2-1 (a). The very earliest such devices had structures literally of this kind. Two closely spaced junctions were created by crystal-growth methods, and a “bar”or parallelepiped was then cut out of the germanium crystal. Electrical leads were attached to it (an enormous
challenge!) and the result was a BJT. For reasons that will be explained shortly ,The electrical terminals are given the names, respectively from left to right, emitter, base, and collector. These names were chosen with an eye to distinctive initial letters, which are displayed in Figure2-1(a) in association with the three terminals. The shaded regions in Figure 2-1(a) represent the space-charge regions (or depletion regions) of a pair of NP junctions. The boundaries of the these regions are emphasized because conditions at there assume far greater importance than conditions at the metallurgical junction (which are not even represented in the drawing.) The term “base” may well be a puzzling choice in the context of Figure 2-1(a). Actually, the term is a vestigial remnant (and practically the only remnant) of the point-contact transistor. In that device a small germanium crystal was mounted on a pedestal, and two point-contact wires (designated as emitter and collector) were positioned on top of the crystal, so that the crystal was literally the “base”of the structure. The central region in Figure 2-1(a) plays an electrical role analogous to that of the base region in a point-contact device.
图2-1（a）给出了晶体管的基本结构。

非常早期的器件就是这种结构，两个相近空间结是用晶体生长的方法制得的，条棒或平行管是通过锯切锗晶体而得。

电接头和晶体棒紧密接触（大挑战！）制成晶体管。

由于即将介绍的原因，给这些电极命名，从左到右分别为：发射极、基极和集电极，这些名称通过目测区分原始标记来进行选择，而这些标志显示在与三个电极相联系的图2-1（a）中。

图2-1（a）中阴影区域代表一对PN 结的空间电荷区（耗尽层），这些区域的边缘得以强调是因为在那种假定状态下远比合金结（未在图中画出）状态下重要。

基极在图2-1（a）背景下比较难确定。

实际上，电极是点接触晶体管的残留阳极（仅是阳极）。

在器件上一块小的锗晶体沉积在衬底上，两个点接触线（特指发射极和集电极）制备在晶体表面，所以实际上晶体成为了器件的基区。

图2-1（a）的中心区域与点接触器件的基区在电处理上有类似之处。

3 、An input port or an output port in the circuit sense consists of a pair of terminals. Since the BJT is a three-terminal device, one of the three terminals is permitted to be common to the input and output ports, and the other two terminals are each uniquely associated with each port. For reasons that we shall examine ,when the base and emitter terminals are chosen for the input port with the collector and emitter terminals taken for the output port, the BJT can exhibit both current gain and voltage gain. This useful combination of properties has made the common-emitter configuration the most widely used of the several possibilities, a term acknowledging that the emitter terminal is common to the input and output ports. The adjective “grounded-emitter”is also sometimes applied to this connection.
在电路方向中的输入端和输出端组成一对终端。

由于晶体管是一个三接线端的器件，其中一端作为输入端和输出端的公共端，其他两端独立并与对应端相联系。

由于这个原因，我们将检测，当基极和发射极端用作输入以及集电极和发射极端用作输出端时，晶体管能呈现的电流和电压增益。

这种特性的有效组合使得共发射极构造广泛用于一些可能的地方，也就是发射极端是输入输出的公共端。

“辅助共发射极”有时也用于这种连接。

4 、Operation of the BJT can be approached by examining the properties of its two junctions individually，considering them to be isolated．As we saw in Chapter 1，
this is term that describes a junction whose end regions are extensive in the x direction (since we continue to consider one-dimensional structures only). As a result, the carrier-density disturbances that accompany junction biasing have space enough to “fade away" before they reach the inevitable contacts．Thus the inherent properties of the junction under study will be seen ．And since we are going to assume step junctions only ，these inherent junction properties subsume those of both of its uniformly doped regions-properties such as absolute doping and carrier lifetime．Then we shall combine the junctions in order to examine their interaction．In a BJT，this interaction is crucial; there is no way to simulate BJT behavior using isolated junctions.
晶体管的工作原理在考虑其是独立器件的前提下，可以通过分别测量它两个结的特性而近似得到。

正如我们在第一章所看到，这种情况描述结电极的边缘区域在X 方向的延伸（因为我们一直认为只是一维结构而已）。

因此，伴随结偏的载流子浓度变化，在它们到达接触之前有
足够的空间逐渐消失。

我们也就得到了研究的PN 结的固有特性。

由于我们只是假定为突变结，这些PN 结的固有特性是由平均掺杂区域特性，如绝对掺杂和载流子寿命，所决定。

为了检测
它们的相互影响，我们将组合这些结。

在一个晶体管中，这种影响具有决定性，没有办法用独立的
PN 结来模拟晶体管的特性。

5 、The most important of the secondary currents is the one labeled IB, the base-terminal current ．It differs in numerous and major ways from the primary electron current that has occupied us up to this point：First ．it is a majority-carrier current，or a hole current in the NPN device. Second，it flows laterally from the base contact into the active region of the BJT．Refer back to Figure 2－2, which shows the commonplace (diffused) BJT in a relatively realistic cross section. The portion of the base region contiguous with (or “under") the emitter region is the active base region, sometimes also termed the intrinsic base region．（This use of the term does not have doping connotations．）The outer portions of the base region，in analogous fashion，are sometimes designated by the adjective extrinsic ．It is there that the base contact is made in this kind of BJT．（Base contacts，by the way，can be and often are made on both sides of the emitter）The third major distinction of the base current from the primary electron current thus becomes evident ．The current of holes traverses a relatively long path within the base region．In the example we are considering it could be several tens of micrometers ，as compared to the less-than-one-micrometer base thickness traversed by the electrons.
最重要的二级电流是基极端电流I B.它在数量上和主要方式上不同于主要电流，原因在
下述几点：首先，它是NPN 器件的多数载流子电流或空穴电流。

第二，它横向地从晶体管
的基区向活动区域流动。

回到图2-2，图中给出了在实际中交叉区域的常见（扩散）晶体管。

接触发射区基区是活动的基极区域，有时也认为是本征基极区域（在实际能级应用中不具有
掺杂的特点）。

在类似结构中，基区的外接端有时特制为非本征情况，这种晶体管的基极接
触如是制备（顺便说，基极接触能够并通常制备在发射极的两侧）。

第三是来自主要电流的
基极电流的差别变得很明显。

空穴电流在基区传输了一段相对较长的距离，在所给例子中与电
子移动的少于一微米的基区厚度相比，我们认为空穴移动了几十微米。

6 、Once in the intrinsic base region ，most of the holes undergo a change
indirection and flow into the transition region of the emitter junction．This obviously involves a complex current pattern. It is not a “one-piece”current like that shown for simplicity and convenience in Figure 2 一4，but rather is somewhat like the pattern shown heuristically in Figure 2 一5．In spite of the relatively small size of the base current，it is of extreme importance because，as we shall see，it is the control current that is supplied to the input port in the common-emitter BJT．The perturbing effects of the complicated base-current pattern on ，for example, the electrostatic-potential pattern in the base region，are not serious so long as the base current is small．以前在本征基区，大多数空穴在一定方向上经历了变化并沿发射结的过渡区流动，这显然包括一个复杂的电流图。

它不像图2-4 显示的那么简化和便利的片状电流，而更像是图2-5 推断出的图示结果。

尽管基极电流比较小，但它是非常重要的。

因为正如我们所看到的，
它是提供给共射极晶体管输入端的控制电流。

复杂的基区电流扰乱效果图中，例如在基区的静电电位图中，只要基区电流足够小就不是那么严重。

7 、It is the dimensions of a base or emitter stripe that are appropriately designated length and width. For dimensions in the x direction, into the silicon，the term thickness is far more descriptive and appropriate，because the latter dimensions are typically much smaller．More important，clarity is served by consistency in these matters．Curiously，even engineers，who are supposed to have above-average skill in spatial visualization ，sometimes seem to have difficulty in understanding and verbalizing the three-dimensional aspects of the BJT．One too frequently hears and
instead of reads tangled syntax such as．“This transistor has a very thin base width,‘'
the simple declaration that the transistor has a thin base region．
所指定的长度和宽度是基极或发射极的尺寸。

对于硅材料在X 方向上的尺寸，能级厚度更加多样性和恰当，因为后者的尺寸更加小。

更为重要的是，这些材料有明显的一致性。

奇怪的是，甚至有高水平空间想象力的工程师，有时也很难理解和表述晶体管的三维形状。

我们经常听到和看到像这样的混乱说法“晶体管有着非常薄的基区宽度”，换句简单的话说是晶体管有薄的基区。

8、we saw in Chapter 1 that the dominant reverse-current mechanism in a silicon junction is the excess of generation over recombination in the space-charge region ，where reverse bias has caused a depression of both carrier densities below their equilibrium values．（In such conditions，generation exceeds recombination，just as the reverse is true in the presence of excess carriers ．）The carriers so generated are separated by the electric field and are swept to the regions where they become majority carriers . A representative value for this leakage current is of the order of ten Pico amperes．The description just given shows that it consists equally of holes and electrons．The electrons become a negligible part of the collector current，departing the BJT through the collector terminal．The holes entering the base region mingle with those coming from the base contact．As a result，they，too，participate in emitter-region recombination and ，to a much lesser degree ，base-region recombination．
我们在第一章看到，在硅PN 结占优势的反向电流是在空间电荷区产生超过复合的量，
而在这个区域的反偏导致所有载流子的浓度降低并低于他们的平衡值（在这种情况下，产生
超过复合，正如在过多载流子的出现下反向是存在的）。

产生的载流子被外加电场分离开来，然后通过这些区域成为多数载流子。

漏电流的代表值是10 皮安的数量级。

前面所描述的情况下是载流子由等量的空穴和电子组成。

电子到达晶体管集电极的终端时，被认为是集电极电流的可忽略部分，空穴进入基区与来自基区接触的电子相混合。

因此，它们参与到发射区的复合和基区的复合是非常次要的。

9、In the ear of germanium grown-junction and alloyed-junction BJTs,a large-signal model of fundamental importance was advanced by Ebers and Moll. In spite of extensive BJT structural evolution since that time chapter1,their model remains valid. Its primary use has been for static modeling. The original paper extended the model to deal with large-signal, time-varying problems as well. But their dynamic model did not find wide acceptance, because it introduced for the extension somewhat awkward frequency-dependent current generations. For static modeling, it is directly rooted in device physics. The physics properties stressed originally were common-base current gain, F and R,and the saturation current exhibited by the two junctions in their BJT environment. The latter choice was a logical one in the germanium era, because as we have seen, germanium junctions are dominated by diffusion current in reverse bias and saturate cheaply. While the same approach still worked for silicon BJTs, a measure of physical relevance was lost. We now describe how that physical relevance was regained.
在晶体管锗生长结和合金结时期，Ebers 和Moll 改进了具有根本重要性的大信号模型。

尽管自第一章以来，晶体管的结构演化广泛，但它们的模型仍然有效。

一直以来主要使用静态模型。

用最初理论延伸的模型去处理大信号以及随时间变化的问题。

但是它们的动态模型没有被广泛接受，因为为了扩充，它引入了不灵活的依赖于产生的电流的频率。

对于静态模型，它直接
植根于器件物理学。

最初强调的物理特性是共基极电流增益，αF 和αR，以及晶体管两个结的饱和电流。

在锗时期选择后者作为逻辑之一，因为正如我们已经看到，锗PN 结受反向偏置扩
散饱和电流的支配，而同样的方法仍在硅晶体管中起作用，但物理相关性的测量方法已经丢失，我们现在介绍如何恢复物理相关性。

10、Their approach to this challenge employed a variation and extension of charge-control techniques．The original methods，described and applied to the isolated junction in chapter 1 ，had been used extensively for the dynamic modeling of semiconductor devices. They were applied to the BJT by Beacfoy and Sparkes，with a result that is treated at some length in chapter 1. Gummel himself contributed a different kind of charge-control model and applied it to the BJT in an earlier 1970 paper. The essence of this charge-control model “of the second kind”is illustrated in Section 2.1.7 . The further extension contained in the Gummel-Poon paper used a “phenomenological”or semiempirical approach to the complicated problem of the real BJT. That is ，their model does not concern itself with the details of carrier distributions and physical mechanisms responsible for charge storage ．For example，in the case of the Kirk effect it simply associates a certain packet of charge with the collector junction ，rather than becoming involved with information such as that in Figure (which ,to be sure, was not available at that time).Their computer-oriented model employed twenty-one parameters that were to be assigned and then empirically
adjusted by comparing model predictions to experimental data. It has been extensively used in the years since its introduction. The book by Getreu gives a good account of related modeling developments in the 1970s.
对于这个问题的研究用在电荷控制技术的变更和扩展。

在第一章中描述和应用到独立结的原始方法被广泛用于半导体器件中的动态模型，这些方法被Beacfoy 和Sparker 应用到晶体管中，结果在第一章一些范围中进行处理。

Gummel 他自己在1970 年早期的论文中提出一个不同的电荷控制模型并将其应用到晶体管中。

这个模式（第二种）的精华部分都图示在2.1.7 节。

包括在Gummel-Poon 论文中的进一步的扩展用一种唯象或半经验的方法应用到真正晶体管中的复杂问题的处理上。

也就是，这种模型不涉及与电荷存储相关的载流子分布和物理机理的相关细节问题。

例如，对Kirk 效应，只是与集电结简单联合的一些电荷束，而不是与图中所说的一样的相关信息（确切地说，在那时它也不是适用的）。

他们计算取向的模型运用了分配的21 个参数并且通过经验来调整比较模型的推导值与实验值。

自从它提出来以后近些年得到广泛应用。

Getreu 著的书在20 世纪70 年代提供大量的相关模型的改进。

11、Many semiconductor devices discussed in the previous chapters can be operated in the microwave region. However, to achieve capability, the device dimensions must be reduced and the parasitic capacitance and resistance must be minimized. For example, in a MESFET the gate length must be reduced to increase the cutoff frequency, and the contact resistance to the source and the drain must be lowered so that the frequency response is not limited by the RC product. Table 2-1 summarizes the representative microwave devices and their operational principles. In this chapter, we consider four special microwave devices: the tunnel diode, the IMPATT diode, the BARITT diode, and the transferred-electron device. We shall investigate the operational principles of these devices and how they can be used in microwave applications.
前面几章讨论的许多半导体器件都可以在微波波段运行。

但是为了获得性能，必须减小器件的尺寸，寄生的电容和电阻必须最小。

例如，MESFET(Metal-Semiconductor Field Effect Transistor)器件中必须减小栅极长度以提高截止频率，必须减少源极和漏极的接触电阻以使频率响应不受RC 的限制。

表2-1 总结了具有代表性的微波器件和它们的运行原理。

这章中，我们考虑四种特殊的微波器件：tunnel 二极管，IMPATT 二极管，BARITT 二极管,和传递电子的器件。

我们将研究这些器件的原理和它们怎样用在微波应用中。

五、汉译英（20 分）
1、发射、基极和集电极区发呢憋是均匀掺杂，而且需要PN 节都是突变结；
The emitter, base, and collector regions individually are uniformly doped. Thus requires that the junctions be step junctions.
2、在基极和机电机取掺杂是非本征且非简并的；
In the base and collector regions the doping is extrinsic but nondegenerate.
3、如果发射区掺杂是简并，掺杂区域不管怎样可通过应用经验修正数量值（如扩散和本征密度）的常规半导体公式来描述；
If the emitter-region doping is degenerate, the region can nonetheless be described by the conventional semiconductor equations by employing empirically adjusted values of quantities such as diffusivity and intrinsic density.
4、在基区和集电区，载流子寿命较高；
In the base and collector regions, carrier lifetime is high.
5、注入载流子电流密度较小；
Injected-carrier current densities are small.
7、在偏置电压下的PN 边界的位置系数可以忽略；
The positional dependence of the junction boundaries upon bias voltage may be neglected.
8、击穿现象可以忽略；
Breakdown phenomena may be neglected.
9、所有问题是一维的；
The problem is one-dimensional.
10、欧姆接触是标准的并且是高复合速度变化的。

The ohmic contacts are ideal and of the high-recombination-velocity variety. 11、发射区和集电区较厚，或沿X 方向扩展，并与它们各自少数载流子扩散长度相对应；
The emitter and collector regions are thick, or extensive in the x direction, relative to their respective minority-carrier diffusion lengths.
12、电流系数αF 、αR 与电压和电流无关。

The current gains αF and αR are independent of current and Voltage.。