2N3904三极管规格书
FOSAN富信电子 三极管 2N3904-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N3904 TO-92Bipolar Transistor双极型三极管▉Features特点NPN Switching开关▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO60V Collector-Emitter Voltage集电极发射极电压V CEO40V Emitter-Base Voltage发射极基极电压V EBO6V Collector Current集电极电流I C200mA Power dissipation耗散功率P C(T a=25℃)625mW Thermal Resistance Junction-Ambient热阻RΘJA200℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Rank产品分档Rank档位O Y GH FE Range100-200200-300300-400ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N3904■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage集电极基极击穿电压(I C =10uA ，I E =0)BV CBO 60——V Collector-Emitter Breakdown Voltage集电极发射极击穿电压(I C =1mA ，I B =0)BV CEO 40——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =10uA ，I C =0)BV EBO 6——V Collector-Base Leakage Current集电极基极漏电流(V CB =60V ，I E =0)I CBO ——100nA Collector-Emitter Leakage Current集电极发射极漏电流(V CE =30V ,V BE =-3V)I CEX ——100nA Emitter-Base Leakage Current发射极基极漏电流(V EB =5V ，I C =0)I EBO ——100nA DC Current Gain(V CE =1V ，I C =10mA)直流电流增益(V CE =1V ，I C =50mA)(V CE =1V ，I C =100mA)H FE 1006030—300Collector-Emitter Saturation Voltage集电极发射极饱和压降(I C =50mA,I B =5mA)V CE(sat)——0.3V Base-Emitter Saturation V oltage基极发射极饱和压降(I C =50mA,I B =5mA)V BE(sat)——0.95V Transition Frequency特征频率(V CE =20V ，I C =10mA)f T 300——MH Z Delay Time 延迟时间(V CC =3V,V BE =-0.5V,I C =10mA,I B1=1mA)t d ——35ns Rise Time 上升时间(V CC =3V,V BE =-0.5V,I C =10mA,I B1=1mA)t r ——35ns Storage Time 贮存时间(V CC =3V,I C =10mA,I B1=I B2=1mA)t s ——200ns Fall Time 下降时间(V CC =3V,I C =10mA,I B1=I B2=1mA)t f——50nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N3904■Typical Characteristic Curve典型特性曲线安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.2N3904■Dimension外形封装尺寸。
三极管参数
2N5551 NPN TO-92 180V 0.6A 0.625W
2N5684 PNP TO-3 80V 50A 300W
2N5685 NPN TO-3 60V 50A 300W
2N5686 NPN TO-3 80V 50A 300W
BC640 PNP TO-92 100V 1A 0.8W
BC879 PNP达 TO-126 100V 1A 0.8W
BD系列
型号 结型 外形 参数
BD135 NPN TO-126 45V 1.5A 12.5W
BD136 PNP TO-126 45V 1.5A 12.5W
BC系列
型号 结型 外形 参数
BC327 PNP TO-92 50V 0.8A 0.625W
BC328 PNP TO-92 30V 0.8A 0.625W
BC337 NPN TO-92 50V 0.8A 0.625W
BC338 NPN TO-92 30V 0.8A 0.625W
BC368 NPN TO-92 25V 1A 0.8W
BC369 PNP TO-92 25V 1A 0.8W
BC546 NPN TO-92 80V 0.1A 0.5W
BC547 NPN TO-92 50V 0.1A 0.5W
BC548 NPN TO-92 30V 0.1A 0.5W
BU508AF NPN TOP-3F 1500V 8A 34W
BU508DF NPND TOP-3F 1500V 8A 34W
BU806 NPN达 TO-220 400V 8A 60W
BU932金封 NPN达 TO-3 500V 15A 150W
2n3903数据表说明书
DATA SHEET General PurposeTransistorsNPN Silicon2N3903, 2N3904Features•Pb−Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitCollector−Emitter Voltage V CEO40VdcCollector−Base Voltage V CBO60VdcEmitter−Base Voltage V EBO 6.0VdcCollector Current − Continuous I C200mAdcTotal Device Dissipation @ T A = 25°CDerate above 25°C P D6255.0mWmW/°CTotal Device Dissipation@ T C = 25°C Derate above 25°C P D1.512WmW/°COperating and Storage Junction Temperature Range T J, T stg−55 to +150°CTHERMAL CHARACTERISTICS (Note 1)Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R q JA200°C/W Thermal Resistance, Junction−to−Case R q JC83.3°C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Indicates Data in addition to JEDEC Requirements.*For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.MARKING DIAGRAMSSee detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.ORDERING INFORMATIONCOLLECTOR21EMITTER2N390xYWW GGx= 3 or 4Y= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACKTO−92CASE 29STYLE 1ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 2)(I C = 1.0 mAdc, I B = 0)V(BR)CEO40−Vdc Collector−Base Breakdown Voltage (I C = 10 m Adc, I E = 0)V(BR)CBO60−Vdc Emitter−Base Breakdown Voltage (I E = 10 m Adc, I C = 0)V(BR)EBO 6.0−Vdc Base Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc)I BL−50nAdc Collector Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc)I CEX−50nAdc ON CHARACTERISTICSDC Current Gain (Note 2)(I C = 0.1 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 1.0 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 10 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 50 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 100 mAdc, V CE = 1.0 Vdc)2N39032N3904h FE204035705010030601530−−−−150300−−−−−Collector−Emitter Saturation Voltage (Note 2) (I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc V CE(sat)−−0.20.3VdcBase−Emitter Saturation Voltage (Note 2) (I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc)V BE(sat)0.65−0.850.95VdcSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)2N39032N3904f T250300−−MHzOutput Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C obo− 4.0pF Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C ibo−8.0pFInput Impedance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h ie1.01.08.010k WVoltage Feedback Ratio(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h re0.10.55.08.0X 10−4Small−Signal Current Gain(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h fe50100200400−Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe 1.040m mhosNoise Figure(I C = 100 m Adc, V CE = 5.0 Vdc, R S = 1.0 k W, f = 1.0 kHz)2N39032N3904NF−−6.05.0dBSWITCHING CHARACTERISTICSDelay Time(VCC = 3.0 Vdc, V BE = 0.5 Vdc,I C = 10 mAdc, I B1 = 1.0 mAdc)t d−35nsRise Time t r−35nsStorage Time(V CC = 3.0 Vdc, I C = 10 mAdc,2N3903I B1 = I B2 = 1.0 mAdc)2N3904t s−−175200nsFall Time t f−50ns 2.Pulse Test: Pulse Width v 300 m s; Duty Cycle v 2%.ORDERING INFORMATIONDevicePackage Shipping †2N3903RLRM TO −922000 / Ammo Pack 2N3904TO −925000 Units / Bulk 2N3904G TO −92(Pb −Free)5000 Units / Bulk 2N3904RLRA TO −922000 / Tape & Reel 2N3904RLRAG TO −92(Pb −Free)2000 / Tape & Reel 2N3904RLRM TO −922000 / Ammo Pack 2N3904RLRMG TO −92(Pb −Free)2000 / Ammo Pack 2N3904RLRPTO −922000 / Ammo Pack 2N3904RLRPG TO −92(Pb −Free)2000 / Ammo Pack 2N3904RL1G TO −92(Pb−Free)2000 / Tape & Reel 2N3904ZL1TO −922000 / Ammo Pack 2N3904ZL1GTO −92(Pb −Free)2000 / Ammo Pack†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.Figure 1. Delay and Rise Time Equivalent Test CircuitFigure 2. Storage and Fall Time Equivalent Test Circuit10 < t 1 < 500 m * T otal shunt capacitance of test jig and connectors* T otal shunt capacitance of test jig and connectorsTYPICAL TRANSIENT CHARACTERISTICSFigure 3. CapacitanceREVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.00.1Figure 4. Charge DataI C , COLLECTOR CURRENT (mA)50001.0Q , C H A R G E (p C )3000200010005003002007001005070 2.0 3.0 5.07.01020305070100200C A P A C I T A N C E (p F )1.02.03.0 5.07.010200.20.30.50.7T J = 25°C T J = 125°CFigure 5. Turn −On TimeI C , COLLECTOR CURRENT (mA)7010020030050050Figure 6. Rise TimeI C , COLLECTOR CURRENT (mA)T I M E (n s )5t , R I S E T I M E (n s )Figure 7. Storage Time I C , COLLECTOR CURRENT (mA)Figure 8. Fall TimeI C , COLLECTOR CURRENT (mA)1030720701002003005005051030720701002003005005051030720701002003005005051030720r t , F A L L T I M E (n s )f t , S T O R A G E T I M E (n s )s ′TYPICAL AUDIO SMALL −SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)Figure 9. f, FREQUENCY (kHz)46810122Figure 10.R S , SOURCE RESISTANCE (k OHMS)0N F , N O I S E F I G U R E (d B )04681012214N F , N O I S E F I G U R E (d B )Figure 11. Current GainI C , COLLECTOR CURRENT (mA)7010020030050Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , C U R R E N T G A I Nh , O U T P U T A D M I T T A N C E ( m h o s )Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.30.5 3.00.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h , I N P U T I M P E D A N C E (k O H M S )ie 0.10.21.02.0 5.0100.30.5 3.00.10.21.02.0 5.0100.30.5 3.0210.10.21.02.0 5.0100.30.5 3.0f e m -4h PARAMETERS(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)TYPICAL STATIC CHARACTERISTICSFigure 15. DC Current GainI C , COLLECTOR CURRENT (mA)0.30.50.71.02.00.2h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.1F EFigure 16. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.2V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S )0CE Figure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 18. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )- 0.500.51.0C O E F F I C I E N T (m V / C )- 1.0- 1.5- 2.0°TO−92 (TO−226)CASE 29−11ISSUE AMDATE 09 MAR 2007STYLES ON PAGE 2NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.SECTION X−XPLANE DIM MIN MAX MIN MAXMILLIMETERSINCHESA0.1750.205 4.45 5.20B0.1700.210 4.32 5.33C0.1250.165 3.18 4.19D0.0160.0210.4070.533G0.0450.055 1.15 1.39H0.0950.105 2.42 2.66J0.0150.0200.390.50K0.500---12.70---L0.250--- 6.35---N0.0800.105 2.04 2.66P---0.100--- 2.54R0.115--- 2.93---V0.135--- 3.43---BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACKNOTES:1.DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYONDDIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN PAND BEYOND DIMENSION K MINIMUM.SECTION X−XDIM MIN MAXMILLIMETERSA 4.45 5.20B 4.32 5.33C 3.18 4.19D0.400.54G 2.40 2.80J0.390.50K12.70---N 2.04 2.66P 1.50 4.00R 2.93---V 3.43---STRAIGHT LEADBULK PACKBENT LEADTAPE & REELAMMO PACKMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSTO−92 (TO−226)CASE 29−11ISSUE AMDATE 09 MAR 2007STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 6:PIN 1.GATE2.SOURCE & SUBSTRATE3.DRAINSTYLE 11:PIN 1.ANODE2.CATHODE & ANODE3.CATHODESTYLE 16:PIN 1.ANODE2.GATE3.CATHODESTYLE 21:PIN 1.COLLECTOR2.EMITTER3.BASESTYLE 26:PIN 1.V CC2.GROUND 23.OUTPUTSTYLE 31:PIN 1.GATE2.DRAIN3.SOURCE STYLE 2:PIN 1.BASE2.EMITTER3.COLLECTORSTYLE 7:PIN 1.SOURCE2.DRAIN3.GATESTYLE 12:PIN 1.MAIN TERMINAL 12.GATE3.MAIN TERMINAL 2STYLE 17:PIN 1.COLLECTOR2.BASE3.EMITTERSTYLE 22:PIN 1.SOURCE2.GATE3.DRAINSTYLE 27:PIN 1.MT2.SUBSTRATE3.MTSTYLE 32:PIN 1.BASE2.COLLECTOR3.EMITTERSTYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 8:PIN 1.DRAIN2.GATE3.SOURCE & SUBSTRATESTYLE 13:PIN 1.ANODE 12.GATE3.CATHODE 2STYLE 18:PIN 1.ANODE2.CATHODE3.NOT CONNECTEDSTYLE 23:PIN 1.GATE2.SOURCE3.DRAINSTYLE 28:PIN 1.CATHODE2.ANODE3.GATESTYLE 33:PIN 1.RETURN2.INPUT3.OUTPUTSTYLE 4:PIN 1.CATHODE2.CATHODE3.ANODESTYLE 9:PIN 1.BASE 12.EMITTER3.BASE 2STYLE 14:PIN 1.EMITTER2.COLLECTOR3.BASESTYLE 19:PIN 1.GATE2.ANODE3.CATHODESTYLE 24:PIN 1.EMITTER2.COLLECTOR/ANODE3.CATHODESTYLE 29:PIN 1.NOT CONNECTED2.ANODE3.CATHODESTYLE 34:PIN 1.INPUT2.GROUND3.LOGICSTYLE 5:PIN 1.DRAIN2.SOURCE3.GATESTYLE 10:PIN 1.CATHODE2.GATE3.ANODESTYLE 15:PIN 1.ANODE 12.CATHODE3.ANODE 2STYLE 20:PIN 1.NOT CONNECTED2.CATHODE3.ANODESTYLE 25:PIN 1.MT 12.GATE3.MT 2STYLE 30:PIN 1.DRAIN2.GATE3.SOURCESTYLE 35:PIN 1.GATE2.COLLECTOR3.EMITTERON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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常用三极管数据
常用三极管数据三极管是一种常见的电子元件，用于放大和开关电路。
根据您的要求，我将为您提供三极管的常用数据，以及相关的标准格式文本。
1. 三极管型号：BC547- 极性：NPN- 封装类型：TO-92- 最大集电极电流：100mA- 最大集电极-基极电压：45V- 最大功耗：500mW- 最大集电极-发射极电压：6V- 最大集电极电流增益：200-800- 工作温度范围：-55°C至+150°C2. 三极管型号：2N3904- 极性：NPN- 封装类型：TO-92- 最大集电极电流：200mA- 最大集电极-基极电压：40V- 最大功耗：625mW- 最大集电极-发射极电压：6V- 最大集电极电流增益：100-300- 工作温度范围：-55°C至+150°C3. 三极管型号：2N3906- 极性：PNP- 封装类型：TO-92- 最大集电极电流：200mA- 最大集电极-基极电压：40V- 最大功耗：625mW- 最大集电极-发射极电压：6V- 最大集电极电流增益：100-300- 工作温度范围：-55°C至+150°C以上是常用的三极管型号及其相关数据。
这些数据对于电子工程师和电路设计师来说非常重要，因为它们提供了关于三极管的性能和限制的信息。
三极管的极性指定了其内部结构和工作方式。
NPN型三极管的集电极和基极之间的电流流动方向与发射极相反，而PNP型三极管则相反。
这种极性差异在电路设计中非常重要，因为它们决定了三极管在电路中的连接方式。
封装类型描述了三极管的外部尺寸和引脚布局。
TO-92封装是一种常见的小型封装，其中三极管的引脚通过曲线形状的金属外壳连接到电路板上。
TO-92封装易于焊接和插入，非常适合手工组装和小型电子设备。
最大集电极电流指定了三极管可以承受的最大电流。
超过这个限制可能导致三极管过热或损坏。
因此，在设计电路时，需要确保集电极电流不超过三极管的额定值。
2N3904L-T92-K中文资料
UNISONIC TECHNOLOGIES CO., LTD2N3904NPN SILICON TRANSISTORNPN GENERAL PURPOSE AMPLIFIERFEATURES* Collector-Emitter Voltage: VCEO =40V * Collector Dissipation: P C(MAX)=625mW * Complementary to 2N3906*Pb-free plating product number: 2N3904LORDERING INFORMATIONOrder Number Pin AssignmentNormalLead Free Plating Package 1 2 3 Packing2N3904-T92-B 2N3904L-T92-B TO-92 E B C Tape Box 2N3904-T92-K 2N3904L-T92-K TO-92 E B C BulkABSOLUTE MAXIMUM RATING (Ta=25℃)PARAMETER SYMBOL RATINGSUNIT Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 40 VEmitter-Base Voltage V EBO 6 V Collector Current I C 200 mA Collector Dissipation P C 625 mW Junction Temperature T J 150 ℃Operating and Storage Temperature T STG-55 ~ +150 ℃Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)PARAMETER SYMBOL TESTCONDITIONSMINTYPMAX UNITCollector-Base Breakdown Voltage BV CBO I C=10µA, I E=0 60V Collector-Emitter Breakdown Voltage (note) BV CEO I C=1mA,I B=0 40V Emitter-Base Breakdown Voltage BV EBO I E=10µA, I C=0 6VV CE(SAT)1I C=10mA, I B=1mA0.2Collector-Emitter Saturation Voltage (note)V CE(SAT)2I C=50mA, I B=5mA0.3VV BE(SAT)1I C=10mA, I B=1mA 0.650.85Base-Emitter Saturation Voltage (note)V BE(SAT)2I C=50mA, I B=5mA0.95VCollector Cut-off Current I CBO V CE=30V, V EB=3V50nABase Cut-off Current I BL V CE=30V, V EB=3V50nAh FE1V CE=1V, I C=0.1mA 40h FE2V CE=1V, I C=1mA 70h FE3V CE=1V, I C=10mA 100300h FE4V CE=1V, I C=50mA 60DC Current Gain (note)h FE5V CE=1V, I C=100mA 30Current Gain Bandwidth Product f T V CE=20V, I C=10mA, f=100MHz 300 MHzOutput Capacitance C ob V CB=5V, I E=0, f=1MHz 4 pFTurn on Time t ON V CC=3V,V BE=0.5V,I C=10mA,I B1=1mA70nsTurn off Time t OFF I B1=1B2=1mA250ns Note: Pulse test: Pulse Width≦300µs, Duty Cycle≦2%TYPICAL CHARACTERISTICSh FE vs. I C Collector Current, I C (mA)D C C u r r e n t G a i n , h F Ef T vs. ICCollector Current , I C (mA)103050100300500C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f T (M H z )V (SAT )vs. I CCollector Current , I C (mA)0.10.33S a t u r a t i o n V o l t a g e , V B E (S A T ), V C E (S A T )0.515C ob vs. V CBCollector -Base Voltage, V CB (V)012346C a p a c i t a n c e , C o b (p F )5。
三极管与场效应管参数手册
作者：佚名文章来源：不详文章录入：zhenfeng更新时间：2007年12月04日浏览：3422人次型号关键参数2N109GE-P 35V 0.15A 0.165W2N1304GE-N 25V 0.3A 0.15W 10MHz2N1305GE-P 30V 0.3A 0.15W 5MHz2N1307GE-P 30V 0.3A 0.15W B>602N1613SI-N 75V 1A 0.8W 60MHz2N1711SI-N 75V 1A 0.8W 70MHz2N1893SI-N 120V 0.5A 0.8W2N2102SI-N 120V 1A 1W <120MHz2N2148GE-P 60V 5A 12.5W2N2165SI-P 30V 50mA 0.15W 18MHz2N2166SI-P 15V 50mA 0.15W 10MHz2N2219ASI-N 40V 0.8A 0.8W 250MHz2N2222ASI-N 40V 0.8A 0.5W 300MHz2N22232xSI-N 100V 0.5A 0.6W >502N2223A2xSI-N 100V 0.5A 0.6W >502N2243ASI-N 120V 1A 0.8W 50MHz2N2369ASI-N 40V 0.2A .36W 12/18ns2N2857SI-N 30V 40mA 0.2W >1GHz2N2894SI-P 12V 0.2A 1.2W 60/90ns2N2905ASI-P 60V 0.6A 0.6W 45/1002N2906ASI-P 60V 0.6A 0.4W 45/1002N2907ASI-P 60V 0.6A 0.4W 45/1002N2917SI-N 45V 0.03A >60Mz2N2926SI-N 25V 0.1A 0.2W 300MHz2N2955GE-P 40V 0.1A 0.15W 200MHz2N3019SI-N 140V 1A 0.8W 100MHz2N3053SI-N 60V 0.7A 5W 100MHz2N3054SI-N 90V 4A 25W 3MHz2N3055SI-N 100V 15A 115W 800kHz2N3055SI-N 100V 15A 115W 800kHz2N3055HSI-N 100V 15A 115W 800kHz2N3251SI-P 50V 0.2A 0.36W2N3375SI-N 40V 0.5A 11.6W 500MHz2N3439SI-N 450V 1A 10W 15MHz2N3440SI-N 300V 1A 10W 15MHz2N3441SI-N 160V 3A 25W POWER2N3442SI-N 160V 10A 117W 0.8MHz2N3502SI-P 45V 0.6A 0.7W 200MHz2N3553SI-N 65V 0.35A 7W 500MHz2N3571SI-N 30V 0.05A 0.2W 1.4GHz2N3583SI-N 250/175V 2A 35W >10MHz 2N3632SI-N 40V 0.25A 23W 400MHz2N3646SI-N 40V 0.2A 0.2W2N3700SI-N 140V 1A 0.5W 200MHz2N3707SI-N 30V 0.03A 0.36W 100MHz 2N3708SI-N 30V 0.03A 0.36W 80MHz 2N3716SI-N 100V 10A 150W 4MHz2N3725SI-N 80V 0.5A 1W 35/60ns2N3740SI-P 60V 4A 25W >4MHz2N3741SI-N 80V 4A 25W >4MHz2N3742SI-N 300V 0.05A 1W >30MHz2N3767SI-N 100V 4A 20W >10MHz2N3771SI-N 50V 30A 150W POWER2N3772SI-N 100V 20A 150W POWER2N3773SI-N 160V 16A 150W POWER2N3792SI-P 80V 10A 150W 4MHz2N3819N-FET 25V 20mA 0.36W2N3820P-FET 20V 15mA 0.36W2N3821N-FET 50V 2.5mA 0.3W2N3824N-FET 50V 10mA 0.3W <250E 2N3866SI-N 55V 0.4A 1W 175MHz2N3904SI-N 60V 0.2A .35W 300MHz2N3906SI-P 40V 0.2A .35W 250MHz2N3909P-FET 20V 10MA 0.3W2N3958N-FET 50V 5mA 0.25W2N3963SI-P 80V 0.2A 0.36W >40MHz 2N3972N-FET 40V 50mA 1.8W2N4001SI-N 100V 1A 15W 40MHz2N4033SI-P 80V 1A 0.8W 150MHz2N4036SI-P 90V 1A 1W 60MHz2N409GE-P 13V 15mA 80mW 6.8MHz 2N4126SI-P 25V 200mA HF2N4220N-FET 30V 0.2A2N4236SI-P 80V 3A 1W >3MHz2N427GE-P 30V 0.4A 0.15W B>402N428GE-P 30V 0.4A 0.15W B>602N4286SI-N 30V 0.05A 0.25W2N4287SI-N 45V 0.1A 0.25W 40MHz2N4291SI-P 40V 0.2A 0.25W 150MH2N4302N-FET 30V 0.5mA 0.3W2N4348SI-N 140V 10A 120W >0.2MHz 2N4351N-FET 30V 30mA 0.3W 140KHz 2N4391N-FET 40V 50mA 30E Up<10V 2N4392N-FET 40V 25mA 60E Up<5V 2N4393N-FET 40V 5mA 100E Up<3V 2N4401SI-N 60V 0.6A 200MHz2N4403SI-P 40V 0.6A 200MHz2N4416N-FET 30V 15mA VHF/UHF2N4420SI-N 40V 0.2A 0.36W2N4427SI-N 40V 0.4A 1W 175MHz2N4906SI-P 80V 5A 87.5W >4MHz2N4920SI-P 80V 1A 30W2N4923SI-N 80V 1A 30W2N5038SI-N 150V 20A 140W 0.5us2N5090SI-N 55V 0.4A 4W 5mA2N5109SI-N 40V 0.5A 2.5W 1.5GHz2N5116P-FET 30V 5mA 150E Up<4V 2N5154SI-N 100V 2A 10W2N5179SI-N 20V 50mA 0.2W >1GHz2N5192SI-N 80V 4A 40W 2MHz2N5240SI-N 375V 5A 100W >2MHz2N5298SI-N 80V 4A 36W >0.8MHz2N5308N-DARL 40V 0.3A 0.4W B>7K 2N5320SI-N 100V 2A 10W AFSWITCH 2N5322SI-P 100V 2A 10W AFSWITCH 2N5401SI-P 160V 0.6A 0.31W2N5416SI-P 350V 1A 10W 15MHz2N5433N-FET 25V 0.4A 0.3W 7E2N5457N-FET 25V 1mA Up<6V2N5458N-FET 25V 2.9mA UNI2N5460P-FET 40V 5mA Up<6V GEN.P 2N5461P-FET 40V 9mA 0.31W2N5462P-FET 40V 16mA Up<9V GEN. 2N5484N-FET 25V 5mA 0.31W2N5485P-FET 25V 4mA Up<4V2N5551SI-N 180V 0.6A 0.31W VID.2N5589SI-N 36V 0.6A 3W 175MHz2N5639N-FET 30V 10mA 310mW2N5672SI-N 150V 30A 140W 0.5us2N5680SI-P 120V 1A 1W2N5682SI-N 120V 1A 1W >30MHz2N5684SI-P 80V 50A 200W2N5686SI-N 80V 50A 300W >2MHz2N5770SI-N 30V 0.05A 0.7W >900MHz2N5771SI-P 15V 50mA 625mW >850MHz 2N5876SI-P 80V 10A 150W >4MHz2N5878SI-N 80V 10A 150W >4MHz2N5879SI-N 60V 10A 150W >4MHz2N5884SI-P 80V 25A 200W AFPOWSW2N5886SI-N 80V 25A 200W >4MHz2N6031SI-P 140V 16A 200W 1MHz2N6050P-DARL+D 60V 12A 100W2N6059SI-N 100V 12A 150W2N6083SI-N 36V 5A PQ=30W 175MHz2N6098SI-N 70V 10A 75W AFPOWSWITCH 2N6099SI-N 70V 10A 75W AFPOWSWITCH 2N6109SI-P 60V 7A 40W 10MHz2N6124SI-P 45V 4A 40W2N6211SI-P 275V 2A 20W 20MHz2N6213SI-P 400V 2A 35W >20MHz2N6248SI-P 110V 15A 125W >6MHz2N6284N-DARL 100V 20A 160W B>752N6287P-DARL 100V 20A 160W2N6292SI-N 80V 7A 40W2N6356N-DARL 50V 20A 150W B>1502N6422SI-P 500V 2A 35W >10MHz2N6427N-DARL 40V 0.5A 0.625W2N6476SI-P 130V 4A 16W 5MHz2N6488SI-N 90V 15A 75W2N6491SI-P 90V 15A 30W2N6517SI-N 350V 0.5A 0.625W >402N6520SI-P 350V 0.5A 0.625W >402N6547SI-N 850/400V 15A 175W2N6556SI-P 100V 1A 10W >75MHz2N6609SI-P 160V 16A 150W 2MHz2N6660N-FET 60V 2A 6.25W 3E2N6661N-FET 90V 2A 6.2W 4E2N6675SI-N 400V 15A2N6678SI-N 400V 15A2N6716SI-N 60V 2A 2W 50MHz2N6718SI-N 100V 2A 2W 50MHz2N6725N-DARL 60V 2A 1W B>15K2N6728SI-P 60V 2A 2W >50MHz2N697SI-N 60V 1A 0.6W <50MHz2N7002N-FET 60V 0.115A 0.2W 7E52N914SI-N 40V 0.5A <40/40NS SW2N918SI-N 30V 50mA 0.2W 600MHz2N2222NPN4A高频放大60V0.8A0.5W25/200NSβ=452N2222ANPN小铁高频放大75V0.6A0.625W300MHZ2N2369NPN4A开关40V0.5A0.3W800MHZ2N2907NPN4A通用60V0.6A0.4W26/70NSβ=2002N3055NPN12功率放大100V15A115W2N3440NPN6视放开关450V1A1W15MHZ2N3773NPN12音频功放开关160V16A150W COP 2N6609 2N3904NPN21E通用60V0.2Aβ=100-4002N3906PNP21E通用40V0.2Aβ=100-4002N5401PNP21E视频放大160V0.6A0.625W100MHZ2N5551NPN21E视频放大160V0.6A0.625W100MHZ2N5685NPN12音频功放开关60V50A300W2N6277NPN12功放开关180V50A250W2N6609PNP12音频功放开关160V15A150W COP 2N3773 2N6678NPN12音频功放开关650V15A175W15MHZ2N6718NPN小铁音频功放开关100V2A2W50MHZ2SA1006BSI-P 250V 1.5A 25W 80MHz2SA1009SI-P 350V 2A 15W2SA1011SI-P 160V 1.5A 25W 120MHz2SA1013SI-P 160V 1A 0.9W 50MHz2SA1015SI-P 50V 0.15A 0.4W 80MHz2SA1016SI-P 100V 0.05A 0.4W 110MHz2SA1017SI-P 120V 50mA 0.5W 110MHz2SA1018SI-P 250V 70mA 0.75W >50MHz2SA1020SI-P 50V 2A 0.9W 100MHz2SA1027SI-P 50V 0.2A 0.25W 100MHz2SA1029SI-P 30V 0.1A 0.2W 280MHz2SA1034SI-P 35V 50mA 0.2W 200MHz2SA1037SI-P 50V 0.4A 140MHz FR2SA1048SI-P 50V 0.15A 0.2W 80MHz2SA1049SI-P 120V 0.1A 0.2W 100MHz2SA1061SI-P 100V 6A 70W 15MHz2SA1062SI-N 120V 7A 80W 15MHz2SA1065SI-P 150V 10A 120W 50MHz2SA1084SI-P 90V 0.1A 0.4W 90MHz2SA1103SI-P 100V 7A 70W 20MHz2SA1106SI-P 140V 10A 100W 20MHz2SA1110SI-P 120V 0.5A 5W 250MHz2SA1111SI-P 150V 1A 20W 200MHz2SA1112SI-P 180V 1A 20W 200MHz2SA1115SI-P 50V 0.2A 200MHz UNI2SA1120SI-P 35V 5A 170MHz2SA1123SI-P 150V 50mA 0.75W 200MHz2SA1124SI-P 150V 50mA 1W 200MHz2SA1127SI-P 60V 0.1A 0.4W 200MHz 2SA1141SI-P 115V 10A 100W 90MHz 2SA1142SI-P 180V 0.1A 8W 180MHz2SA1145SI-P 150V 50mA 0.8W 200MHz 2SA1150SI-P 35V 0.8A 0.3W 120MHz 2SA1156SI-P 400V 0.5A 10W POWER 2SA1160SI-P 20V 2A 0.9W 150MHz2SA1163SI-P 120V 0.1A 100MHz2SA1170SI-P 200V 17A 200W 20MHz 2SA1185SI-P 50V 7A 60W 100MHz2SA1186SI-P 150V 10A 100W2SA1200SI-P 150V 50mA 0.5W 120MHz 2SA1201SI-P 120V 0.8A 0.5W 120MHz 2SA1206SI-P 15V 0.05A 0.6W2SA1207SI-P 180V 70mA 0.6W 150MHz 2SA1208SI-P 180V 0.07A 0.9W2SA1209SI-P 180V 0.14A 10W2SA1210SI-P 200V 0.14A 10W2SA1213SI-P 50V 2A 0.5W 120MHz2SA1215SI-P 160V 15A 150W 50MHz 2SA1216SI-P 180V 17A 200W 40MHz 2SA1220ASI-P 120V 1.2A 20W 160MHz 2SA1221SI-P 160V 0.5A 1W 45MHz2SA1225SI-P 160V 1.5A 15W 100MHz 2SA1227ASI-P 140V 12A 120W 60MHz 2SA1232SI-P 130V 10A 100W 60MHz 2SA1241SI-P 50V 2A 10W 100MHz2SA1242SI-P 35V 5A 1W 170MHz2SA1244SI-P 60V 5A 20W 60MHz2SA1249SI-P 180V 1.5A 10W 120MHz 2SA1261SI-P 100V 10A 60W POWER2SA1262SI-P 60V 4A 30W 15MHz2SA1264NSI-P 120V 8A 80W 30MHz2SA1265NSI-P 140V 10A 100W 30MHz 2SA1266SI-P 50V 0.15A 0.4W POWER 2SA1268SI-N 120V 0.1A 0.3W 100MHz 2SA1270SI-P 35V 0.5A 0.5W 200MHz 2SA1271SI-P 30V 0.8A 0.6W 120MHz 2SA1275SI-P 160V 1A 0.9W 20MHz2SA1282SI-P 20V 2A 0.9W 80MHz2SA1283SI-P 60V 1A 0.9W 85MHz2SA1286SI-P 30V 1.5A 0.9W 90MHz2SA1287SI-P 50V 1A 0.9W 90MHz2SA1292SI-P 80V 15A 70W 100MHz2SA1293SI-P 100V 5A 30W 0.2us2SA1294SI-P 230V 15A 130W2SA1295SI-P 230V 17A 200W 35MHz 2SA1296SI-P 20V 2A 0.75W 120MHz2SA1298SI-P 30V 0.8A 0.2W 120MHz 2SA1300SI-P 10V 2A 0.75W 140MHz2SA1302SI-P 200V 15A 150W 25MHz 2SA1303SI-P 150V 14A 125W 50MHz 2SA1306SI-P 160V 1.5A 20W2SA1306ASI-P 180V 1.5A 20W 100MHz 2SA1307SI-P 60V 5A 20W 0.1us2SA1309SI-P 30V 0.1A 0.3W 80MHz2SA1310SI-P 60V 0.1A 0.3W 200MHz 2SA1315SI-P 80V 2A 0.9W 0.2us2SA1316SI-P 80V 0.1A 0.4W 50MHz2SA1317SI-P 60V 0.2A 0.3W 200MHz 2SA1318SI-P 60V 0.2A 0.5W 200MHz 2SA1319SI-P 180V 0.7A 0.7W 120MHz 2SA1321SI-P 250V 50mA 0.9W 100MHz 2SA1328SI-P 60V 12A 40W 0.3us2SA1329SI-P 80V 12A 40W 0.3us2SA1345SI-N 50V 0.1A 0.3W 250MHz 2SA1346SI-P 50V 0.1A 200MHz2SA1348SI-P 50V 0.1A 200MHz2SA1349P-ARRAY 80V 0.1A 0.4W 170 2SA1352SI-P 200V 0.1A 5W 70MHz2SA1357SI-P 35V 5A 10W 170MHz2SA1358SI-P 120V 1A 10W 120MHz2SA1359SI-P 40V 3A 10W 100MHz2SA1360SI-P 150V 50mA 5W 200MHz 2SA1361SI-P 250V 50mA 80MHz2SA1370SI-P 200V 0.1A 1W 150MHz2SA1371ESI-P 300V 0.1A 1W 150MHz 2SA1376SI-P 200V 0.1A 0.75W 120MHz 2SA1380SI-P 200V 0.1A 1.2W2SA1381SI-P 300V 0.1A 150MHz2SA1382SI-P 120V 2A 0.9W 0.2us2SA1383SI-P 180V 0.1A 10W 180MHz 2SA1386SI-P 160V 15A 130W 40MHz 2SA1387SI-P 60V 5A 25W 80MHz2SA1392SI-P 60V 0.2A 0.4W 200MHz 2SA1396SI-P 100V 10A 30W2SA1399SI-P 55V 0.4A 0.9W 150MHz 2SA1400SI-P 400V 0.5A 10W2SA1405SI-P 120V 0.3A 8W 500MHz2SA1406SI-P 200V 0.1A 7W 400MHz2SA1407SI-P 150V 0.1A 7W 400MHz2SA1413SI-P 600V 1A 10W 26MHz2SA1428SI-P 50V 2A 1W 100MHz2SA1431SI-P 35V 5A 1W 170MHz2SA1441SI-P 100V 5A 25W <300ns2SA1443SI-P 100V 10A 30W2SA1450SI-P 100V 0.5A 0.6W 120MHz 2SA1451SI-P 60V 12A 30W 70MHz2SA1460SI-P 60V 1A 1W <40NS2SA1470SI-P 80V 7A 25W 100MHz2SA1475SI-P 120V 0.4A 15W 500MHz 2SA1476SI-P 200V 0.2A 15W 400MHz 2SA1477SI-P 180V 0.14A 10W 150MHz 2SA1488SI-P 60V 4A 25W 15MHz2SA1489SI-P 80V 6A 60W 20MHz2SA1490SI-P 120V 8A 80W 20MHz2SA1491SI-P 140V 10A 100W 20MHz2SA1494SI-P 200V 17A 200W 20MHz2SA1507SI-P 180V 1.5A 10W 120MHz 2SA1515SI-P 40V 1A 0.3W 150MHz2SA1516SI-P 180V 12A 130W 25MHz2SA1519SI-P 50V 0.5A 0.3W 200MHz2SA1535ASI-P 180V 1A 40W 200MHz 2SA1538SI-P 120V 0.2A 8W 400MHz2SA1539SI-P 120V 0.3A 8W 400MHz2SA1540SI-P 200V 0.1A 7W 300MHz2SA1541SI-P 200V 0.2A 7W 300MHz2SA1553SI-P 230V 15A 150W 25MHz2SA1566SI-N 120V 0.1A 0.15W 130MHz 2SA1567SI-P 50V 12A 35W 40MHz2SA1568SI-P 60V 12A 40W2SA1577SI-P 32V 0.5A 0.2W 200MHz2SA1593SI-P 120V 2A 15W 120MHz2SA1601SI-P 60V 15A 45W2SA1606SI-P 180V 1.5A 15W 100MHz 2SA1615SI-P 30V 10A 15W 180MHz2SA1624SI-P 300V 0.1A 0.5W 70MHz2SA1625SI-P 400V 0.5A 0.75W2SA1626SI-P 400V 2A 1W 0.5/2.7us2SA1633SI-P 150V 10A 100W 20MHz2SA1643SI-P 50V 7A 25W 75MHz2SA1668SI-P 200V 2A 25W 20MHz2SA1670SI-P 80V 6A 60W 20MHz2SA1671SI-P 120/120V 8A 75W 20MHz 2SA1672SI-P 140V 10A 80W 20MHz2SA1673SI-P 180V 15A 85W 20MHz2SA1680SI-P 60V 2A 0.9W 100/400ns 2SA1684SI-P 120V 1.5A 20W 150MHz 2SA1694SI-P 120/120V 8A 80W 20MHz 2SA1695SI-P 140V 10A 80W 20MHz2SA1703SI-P 30V 1.5A 1W 180MHz2SA1706SI-P 60V 2A 1W2SA1708SI-P 120V 1A 1W 120MHz2SA1726SI-P 80V 6A 50W 20MHz2SA1776SI-P 400V 1A 1W2SA1803SI-P 80V 6A 55W 30MHz2SA1837SI-P 230V 1A 20W 70MHz2SA1930SI-P 180V 2A 20W 200MHz2SA1962SI-P 230V 15A 130W 25MHz 2SA329GE-P 15V 10mA 0.05W2SA467SI-P 40V 0, 4A 0, 3W2SA473SI-P 30V 3A 10W 100MHz2SA483SI-P 150V 1A 20W 9MHz2SA493SI-P 50V 0.05A 0.2W 80MHz2SA495SI-P 35V 0.1A 0.2W 200MHz2SA562SI-P 30V 0.5A 0.5W 200MHz2SA566SI-P 100V 0.7A 10W 100MHz2SA608SI-N 40V 0.1A 0.1W 180MHz2SA614SI-P 80V 1A 15W 30MHz2SA620SI-P 30V 0.05A 0.2W 120MHz 2SA626SI-P 80V 5A 60W 15MHz2SA628SI-P 30V 0.1A 100MHz2SA639SI-P 180V 50mA 0, 25W2SA642SI-P 30V 0.2A 0.25W 200MHz 2SA643SI-P 40V 0.5A 0.5W 180MHz2SA653SI-P 150V 1A 15W 5MHz2SA684SI-P 60V 1A 1W 200MHz2SA699SI-P 40V 2A 10W 150MHz2SA708ASI-P 100V 0.7A 0.8W 50MHz 2SA720SI-P 60V 0.5A 0.6W 200MHz2SA725SI-P 35V 0.1A 0.15W 100MHz 2SA733SI-P 60V 0.15A 0.25W 50MHz 2SA738SI-P 25V 1.5A 8W 160MHz2SA747SI-P 120V 10A 100W 15MHz2SA762SI-P 110V 2A 23W 80MHz2SA765SI-P 80V 6A 40W 10MHz2SA768SI-P 60V 4A 30W 10MHz2SA769SI-P 80V 4A 30W 10MHz2SA770SI-P 60V 6A 40W 10MHz2SA771SI-P 80V 6A 40W 2MHz2SA777SI-P 80V 0.5A 0.75W 120MHz2SA778ASI-P 180V 0.05A 0.2W 60MHz 2SA781SI-P 20V 0.2A 0.2W <80/162SA794SI-P 100V 0.5A 5W 120MHz2SA794ASI-P 120V 0.5A 5W 120MHz2SA812SI-P 50V 0.1A 0.15W2SA814SI-P 120V 1A 15W 30MHz2SA816SI-P 80V 0.75A 1.5W 100MHz2SA817SI-P 80V 0.3A 0.6W 100MHz2SA817ASI-P 80V 0.4A 0.8W 100MHz 2SA836SI-P 55V 0.1A 0.2W 100MHz2SA838SI-P 30V 30mA 0.25W 300MHz 2SA839SI-P 150V 1.5A 25W 6MHz2SA841SI-P 60V 0.05A 0.2W 140MHz2SA858SI-P 150V 50mA 0.5W 100MHz 2SA872SI-P 90V 0.05A 0.2W 120MHz2SA872ASI-P 120V 50mA 0.3W 120MHz 2SA884SI-P 65V 0.2A 0.27W 140MHz2SA885SI-P 45V 1A 5W 200MHz2SA886SI-P 50V 1.5A 1.2W2SA893SI-P 90V 50mA 0.3W2SA900SI-P 18V 1A 1.2W2SA914SI-P 150V 0.05A 200MHz2SA915SI-P 120V 0.05A 0.8W 80MHz2SA916SI-P 160V 0.05A 1W 80MHz2SA921SI-P 120V 20mA 0.25W 200MHz 2SA933SI-P 50V 0.1A 0.3W2SA934SI-P 40V 0.7A 0.75W2SA935SI-P 80V 0.7A 0.75W 150MHz2SA937SI-P 50V 0.1A 0.3W 140MHz2SA940SI-P 150V 1.5A 25W 4MHz2SA941SI-P 120V 0.05A 0.3W 150MHz 2SA949SI-P 150V 50mA 0.8W 120MHz 2SA965SI-P 120V 0.8A 0.9W 120MHz2SA966SI-P 30V 1.5A 0.9W 120MHz2SA968SI-P 160V 1.5A 25W 100MHz2SA970SI-P 120V 0.1A 100MHz2SA982SI-P 140V 8A 80W 20MHz2SA984SI-P 60V 0.5A 0.5W 120MHz2SA985SI-P 120V 1.5A 25W 180MHz2SA988SI-P 120V 0.05A 0.5W2SA991SI-P 60V 0.1A 0.5W 90MHz2SA992SI-P 100V 0.05A 0.2W2SA995SI-P 100V 0.05A 0.4W 100MHzA634PNP28E音频功放开关40V2A10WA708PNP6NF/S80V0.7A0.8WA715CPNP29音频功放开关35V2.5A10W160MHZA733PNP21通用50V0.1A180MHZA741PNP4S20V0.1A <70/120nSA781PNP39B开关20V0.2A <80/160NSA928PNPECB通用20V1A0.25WA933PNP21Uni50V0.1A140MHzA940PNP28音频功放开关150V1.5A25W4MHZ /C2073A950PNP21通用30V0.8A0.6WA966PNP21音频激励输出30V1.5A0.9W COP:C2236A968PNP28音频功放开关160V1.5A25W100MHZ /C2238 A1009PNPBCE功放开关350V2A15WA1012PNP28音频功率放60V5A25WA1013PNP21视频放大160V1A0.9WA1015PNP21通用60V0.15A0.4W8MHZA1020PNP21音频开关50V2A0.9WA1123PNP21低噪放大150V0.05A0.75WA1162PNP21d通用贴片50V0.15A0.15WA1216PNPBCE功放开关180V17A200W20MHZ /2922A1220PNP29音频功放开关120V1.5A20W150MHZ/C2690 A1265PNPBCE功放开关140V10A100W30MHZ /C3182A1295PNPBCE功放开关230V17A200W30MHZ /C3264A1301PNPBCE功放开关160V10A100W30MHZ /C3280A1302PNPBCE功放开关200V15A150W30MHZ /C3281A1358 ?PNP高频120V1A10W120MHZA1444PNPBCE高速电源开关100V15A30W80MHZA1494PNPBCE功放开关200V17A200W20MHZ /C3858A1516PNPBCE功放开关180V12A130W25MHZA1668PNP28B电源开关200V2A25W20MHZA1785PNPBCE驱动400V1A1W/120V1A0.9W140MHA1941PNPBCE功放开关140V10A100WCOP:5198A1943PNPBCE功放开关230V15A150W /C5200 原A1988PNP30功放开关2SB1009SI-P 40V 2A 10W 100MHz2SB1010SI-P 40V 2A 0.75W 100MHz2SB1012KP-DARL 120V 1.5A 8W2SB1013SI-P 20V 2A 0.7W2SB1015SI-P 60V 3A 25W 0.4us2SB1016SI-P 100V 5A 30W 5MHz2SB1017SI-P 80V 4A 25W 9MHz2SB1018SI-P 100V 7A 30W 0.4us2SB1020P-DARL+D 100V 7A 30W 0.8us 2SB1023P-DARL+D 60V 3A 20W B=5K 2SB1035SI-P 30V 1A 0.9W 100MHz2SB1039SI-P 100V 4A 40W 20MHz2SB1050SI-P 30V 5A 1W 120MHz2SB1055SI-P 120V 6A 70W 20MHz2SB1065SI-P 60V 3A 10W2SB1066SI-P 50V 3A 1W 70MHz2SB1068SI-P 20V 2A 0.75W 180MHz 2SB1071SI-P 40V 4A 25W 150MHz2SB1077P-DARL 60V 4A 40W B>1K2SB1086SI-P 160V 1.5A 20W 50MHz 2SB1098P-DARL+D 100V 5A 20W B=80 2SB1099P-DARL+D 100V 8A 25W B=6K 2SB1100P-DARL+D 100V 10A 30W B=6 2SB1109SI-P 160V 0.1A 1.25W2SB1109SSI-P 160V 0.1A 1.25W2SB1117SI-P 30V 3A 1W 280MHz2SB1120SI-P 20V 2.5A 0.5W 250MHz 2SB1121TSI-P 30V 2A 150MHz2SB1123SI-P 60V 2A 0.5W 150MHz2SB1132SI-P 40V 1A 0.5W 150MHz2SB1133SI-P 60V 3A 25W 40MHz2SB1134SI-P 60V 5A 25W 30W2SB1135SI-P 60V 7A 30W 10MHz2SB1136SI-P 60V 12A 30W 10MHz2SB1140SI-P 25V 5A 10W 320MHz2SB1141SI-P 20V 1.2A 10W 150MHz 2SB1143SI-P 60V 4A 10W 140MHz2SB1146P-DARL 120V 6A 25W2SB1149P-DARL 100V 3A 15W B=10K 2SB1151SI-P 60V 5A 20W2SB1154SI-P 130V 10A 70W 30MHz2SB1156SI-P 130V 20A 100W2SB1162SI-P 160V 12A 120W2SB1163SI-P 170V 15A 150W2SB1166SI-P 60V 8A 20W 130MHz2SB1168SI-P 120V 4A 20W 130MHz2SB1182SI-P 40V 2A 10W 100MHz2SB1184SI-P 60V 3A 15W 70MHz2SB1185SI-P 50V 3A 25W 70MHz2SB1186SI-P 120V 1.5A 20W 50MHz2SB1187SI-P 80V 3A 35W2SB1188SI-P 40V 2A 100MHz2SB1202SI-P 60V 3A 15W 150MHz2SB1203SI-P 60V 5A 20W 130MHz2SB1204SI-P 60V 8A 20W 130MHz2SB1205SI-P 25V 5A 10W 320MHz2SB1212SI-P 160V 1.5A 0.9W 50MHz2SB1223P-DARL+D 70V 4A 20W 20MHz 2SB1236SI-P 120V 1.5A 1W 50MHz2SB1237SI-P 40V 1A 1W 150MHz2SB1238SI-P 80V 0.7A 1W 100MHz2SB1240SI-P 40V 2A 1W 100MHz2SB1243SI-P 60V 3A 1W2SB1254P-DARL 160V 7A 70W2SB1255P-DARL 160V 8A 100W B>5K2SB1258P-DARL+D 100V 6A 30W B>1K 2SB1274SI-P 60V 3A 30W 100MHz2SB1282P-DARL+D 100V 4A 25W 50MHz 2SB1292SI-P 80V 5A 30W2SB1302SI-P 25V 5A 320MHz2SB1318P-DARL+D 100V 3A 1W B>200 2SB1326SI-P 30V 5A 0.3W 120MHz2SB1329SI-P 40V 1A 1.2W 150MHz2SB1330SI-P 32V 0.7A 1.2W 100MHz2SB1331SI-P 32V 2A 1.2W 100MHz2SB1353ESI-P 120V 1.5A 1.8W 50MHz 2SB1361SI-P 150V 9A 100W 15MHz2SB1370SI-P 60V 3A 30W 15MHz2SB1373SI-P 160V 12A 2.5W 15MHz2SB1375SI-P 60V 3A 25W 9MHz2SB1382P-DARL+D 120V 16A 75W B>2 2SB1393SI-P 30V 3A 2W 30MHz2SB1420SI-P 120V 16A 80W 50MHz2SB1425SI-P 20V 2A 1W 90MHz2SB1429SI-P 180V 15A 150W 10MHz2SB1434SI-P 50V 2A 1W 110MHz2SB1468SI-P 60/30V 12A 25W2SB1470P-DARL 160V 8A 150W B>5K2SB1490P-DARL 160V 7A 90W B>5K2SB1493P-DARL 160/140V 7A 70W 20 2SB1503P-DARL 160V 8A 120W B>5K2SB1556P-DARL 140V 8A 120W B>5K2SB1557P-DARL 140V 7A 100W B>5K2SB1559P-DARL 160V 8A 80W B>5K2SB1560P-DARL 160V 10A 100W 50MHz 2SB1565SI-P 80V 3A 25W 15MHz2SB1587P-DARL+D 160V 8A 70W B>5K 2SB1624P-DARL 110V 6A 60W B>5K2SB206GE-P 80V 30A 80W2SB324GE-P 32V 1A 0.25W2SB337GE-P 50V 7A 30W LF-POWER2SB407GE-P 30V 7A 30W2SB481GE-P 32V 1A 6W 15KHz2SB492GE-P 25V 2A 6W2SB511ESI-P 35V 1.5A 10W 8MHz2SB524SI-P 60V 1.5A 10W 70MHz2SB527SI-P 110V 0.8A 10W 70MHz2SB531SI-P 90V 6A 50W 8MHz2SB536SI-P 130V 1.5A 20W 40MHz2SB537SI-P 130V 1.5A 20W 60MHz2SB541SI-P 110V 8A 80W 9MHz2SB544SI-P 25V 1A 0.9W 180MHz2SB546ASI-P 200V 2A 25W 5MHz2SB549SI-P 120V 0.8A 10W 80MHz2SB557SI-P 120V 8A 80W2SB560SI-P 100V 0.7A 0.9W 100MHz2SB561SI-P 25V 0.7A 0.5W2SB564SI-P 30V 1A 0.8W2SB598SI-P 25V 1A 0.5W 180MHz2SB600SI-P 200V 15A 200W 4MHz2SB601P-DARL 100V 5A 30W2SB605SI-P 60V 0.7A 0.8W 120MHz2SB621SI-N 25V 1.5A 0.6W 200MHz2SB621ASI-N 50V 1A 0.75W 200MHz2SB631SI-P 100V 1A 8W2SB632SI-P 25V 2A 10W 100MHz2SB633SI-P 100V 6A 40W 15MHz2SB637SI-P 50V 0.1A 0.3W 200MHz2SB641SI-P 30V 0.1A 120MHz2SB647SI-P 120V 1A 0.9W 140MHz2SB649ASI-P 160V 1.5A 1W 140MHz2SB656SI-P 160V 12A 125W 20MHz2SB673P-DARL+D 100V 7A 40W 0.8us 2SB676P-DARL 100V 4A 30W 0.15us2SB681SI-N 150V 12A 100W 13MHz2SB700SI-P 160V 12A 100W2SB703SI-P 100V 4A 40W 18MHz2SB705SI-P 140V 10A 120W 17MHz 2SB707SI-P 80V 7A 40W POWER2SB709SI-P 45V 0.1A 0.2W 80MHz2SB716SI-P 120V 0.05A 0.75W2SB720SI-P 200V 2A 25W 100MHz2SB727P-DARL+D 120V 6A 50W B>1K 2SB731SI-P 60V 1A 10W 75MHz2SB733SI-P 20V 2A 1W >50MHz2SB734SI-P 60V 1A 1W 80MHz2SB739SI-P 20/16V 2A 0.9W 80MHz 2SB740SI-P 70V 1A 0.9W2SB744SI-P 70V 3A 10W 45MHz2SB750P-DARL+D 60V 2A 35W B>100 2SB753SI-P 100V 7A 40W 0.4us2SB764SI-P 60V 1A 0.9A 150MHz2SB765P-DARL+D 120V 3A 30W B>1K 2SB766SI-P 30V 1A 200MHz2SB772SI-P 40V 3A 10W 80MHz2SB774SI-P 30V 0.1A 0.4W 150MHz 2SB775SI-P 100V 6A 60W 13MHz2SB776SI-P 120V 7A 70W 15MHz2SB788SI-P 120V 0.02A 0.4W 150MHz 2SB791P-DARL+D 120V 8A 40W B>10 2SB794P-DARL+D 60V 1.5A 10W B=7 2SB795P-DARL+D 80V 1.5A 10W B<3 2SB808SI-P 20V 0.7A 0.25W 250MHz 2SB810SI-P 30V 0.7A 0.35W 160MHz 2SB815SI-P 20V 0.7A 0.25W 250MHz 2SB816SI-P 150V 8A 80W 15MHz2SB817SI-P 160V 12A 100W2SB817FSI-P 160V 12A 90W 15MHz 2SB819SI-P 50V 1.5A 1W 150MHz2SB822SI-P 40V 2A 0.75W 100MHz2SB824SI-P 60V 5A 30W 30 MHz2SB825SI-P 60V 7A 40W 10MHz2SB826SI-P 60V 12A 40W 10MHz2SB827SI-P 60V 7A 80W 10MHz2SB828SI-P 60V 12A 80W 10MHz2SB829SI-P 60V 15A 90W 20MHz2SB857SI-P 50V 4A 40W NF/S-L2SB861SI-P 200V 2A 30W2SB865P-DARL 80V 1.5A 0.9W2SB873SI-P 30V 5A 1W 120MHz2SB882P-DARL+D 70V 10A 40W B>5K2SB883P-DARL+D 70V 15A 70W B=5K2SB884P-DARL 110V 3A 30W B=4K2SB885P-DARL+D 110V 3A 35W B=4K2SB891SI-P 40V 2A 5W 100MHz2SB892SI-P 60V 2A 1W2SB895AP-DARL 60V 1A B=80002SB897P-DARL+D 100V 10A 80W B>12SB908P-DARL+D 80V 4A 15W 0.15us2SB909SI-P 40V 1A 1W 150MHz2SB922SI-P 120V 12A 80W 20MHz2SB926SI-P 30V 2A 0.75W2SB938AP-DARL+D 60V 4A 40W B>1K2SB940SI-P 200V 2A 35W 30MHz2SB941SI-P 60V 3A 35W POWER2SB945SI-P 130V 5A 40W 30MHz2SB946SI-P 130V 7A 40W 30MHz2SB950AP-DARL+D 80V 4A 40W B>1K2SB953ASI-P 50V 7A 30W 150MHz2SB955P-DARL+D 120V 10A 50W B=42SB975P-DARL+D 100V 8A 40W B>6K2SB976SI-P 27V 5A 0.75W 120MHz2SB985SI-P 60V 3A 1W 150MHz2SB986SI-P 60V 4A 10W 150MHz2SB988SI-P 60V 3A 30W <400/2200B449PNP12功放开关50V3.5A22.5W 锗管B631KPNP29音频功放开关120V1A8W130MHZ /D600K B647PNP21通用120V1A0.9W140MHZ /D667B649PNP29视放180V1.5A1W /D669B669PNP28达林顿功放70V4A40WB673PNP28达林顿功放100V7A40WB675PNP28达林顿功放60V7A40WB688PNPBCE音频功放开关120V8A80W /D718B734PNP39B通用60V1A1W /D774B744PNP21通用30V0.1A0.25WB772PNP29音频功放开关40V3A10WB774PNP21通用30V0.1A0.25WB817PNP30功放开关160V12A100W /D1047B834PNP28功放开关60V3A30WB937APNP功放开关60V2A35 DRALB1020PNP28功放开关达林顿100V7A40Wβ=6000B1079PNP30达林顿功放100V20A100Wβ=5000/D1559 B1185PNP28B功放开关60V3A25W 70MHZ /D1762B1238PNPECB功放开关80V0.7A1W 100MHZB1240PNP39B功放开关40V2A1W100HZB1243PNP39B功放开关40V3A1W70HZB1316PNP54B驱动功放达林顿100V2A10Wβ=15000B1317PNPBCE音频功放180V15A150W COP:D1975B1335PNP28音频功放低噪80V4A30W 12MHZB1375PNPBCE音频功放60V3A2W9MHZB1400PNP28B达林顿功放120V6A25W β=1000-20000 B1429PNPBCE功放开关180V15A150WB1494PNPBCE达林顿功放120V25A120Wβ=2000-20000 2SC1000SI-N 55V 0.1A 0.2W 80MHz2SC1008SI-N 80V 0.7A 0.8W 75MHz2SC1012ASI-N 250V 60mA 0.75W >80MHz2SC1014SI-N 50V 1.5A 7W2SC1017SI-N 75V 1A 60mW 120MHz2SC1030SI-N 150V 6A 50W2SC1046SI-N 1000V 3A 25W2SC1047SI-N 30V 20mA 0.4W 650MHz2SC1050SI-N 300V 1A 40W2SC1051SI-N 150V 7A 60W 8MHz2SC1061SI-N 50V 3A 25W 8MHz=H1062SC1070SI-N 30V 20mA 900MHz2SC1080SI-N 110V 12A 100W 4MHz2SC109SI-N 50V 0.6A 0.6W2SC1096SI-N 40V 3A 10W 60MHz2SC1106SI-N 350V 2A 80W2SC1114SI-N 300V 4A 100W 10MHz2SC1115SI-N 140V 10A 100W 10MHz2SC1116SI-N 180V 10A 100W 10MHz2SC1161SI-P 160V 12A 120W2SC1162SI-N 35V 1.5A 10W 180MHz2SC1172SI-N 1500V 5A 50W2SC1195SI-N 200V 2.5A 100W2SC1213CSI-N 50V 0.5A 0.4W UNI2SC1214SI-N 50V 0.5A 0.6W 50MHz2SC1215SI-N 30V 50mA 0.4W 1.2GHZ2SC1216SI-N 40V 0.2A 0.3W <20/402SC1226SI-N 40/50V 2A 10W 150MHz2SC1238SI-N 35V 0.15A 5W 1.7GHz2SC1247ASI-N 50V 0.5A 0.4W 60MHz2SC1308SI-N 1500V 7A 50W2SC1312SI-N 35V 0.1A 0.15W 100MHz2SC1318SI-N 60V 0.5A 0.6W 200MHz2SC1343SI-N 150V 10A 100W 14MHz2SC1345SI-N 55V 0.1A 0.1W 230MHz2SC1359SI-N 30V 30mA 0.4W 250MHz2SC1360SI-N 50V 0.05A 1W >300MHz2SC1362SI-N 50V 0.2A 0.25W 140MHz2SC1368SI-N 25V 1.5A 8W 180MHz2SC1382SI-N 80V 0.75A 5W 100MHz2SC1384SI-N 60V 1A 1W 200MHz2SC1393SI-N 30V 20mA 250 mW 700MHz 2SC1398SI-N 70V 2A 15W2SC1413ASI-N 1200V 5A 50W2SC1419SI-N 50V 2A 20W 5MHz2SC1426SI-N 35V 0.2A 2.7GHz2SC1431SI-N 110V 2A 23W 80MHz2SC1432N-DARL 30V 0.3A 0.3W B=402SC1439SI-N 150V 50mA 0.5W 130MHz 2SC1445SI-N 100V 6A 40W 10MHz2SC1446SI-N 300V 0.1A 10W 55MHz2SC1447SI-N 300V 0.15A 20W 80MHz2SC1448SI-N 150V 1.5A 25W 3MHz2SC1449SI-N 40V 2A 5W 60MHz2SC1450SI-N 150V 0.4A 20W2SC1454SI-N 300V 4A 50W 10MHz2SC1474-4SI-N 20V 2A 0.75W 80MHz2SC1501SI-N 300V 0.1A 10W 55MHz2SC1505SI-N 300V 0.2A 15W2SC1507SI-N 300V 0.2A 15W 80MHz2SC1509SI-N 80V 0.5A 1W 120MHz2SC1515SI-N 200V 0.05A 0.2W 110MHz 2SC1520SI-N 300V 0.2A 12, 5W2SC1545N-DARL 40V 0.3A 0.3W B=1K2SC1567SI-N 100V 0.5A 5W 120MHz2SC1570SI-N 55V 0.1A 0.2W 100MHz2SC1571SI-N 40V 0.1A 0.2W 100MHz2SC1573SI-N 200V 0.1A 1W 80MHz2SC1577SI-N 500V 8A 80W 7MHz2SC1583SI-N 50V 0.1A 0.4W 100MHz2SC1619SI-N 100V 6A 50W 10MHz2SC1623SI-N 60V 0.1A 0.2W 250MHz2SC1624SI-N 120V 1A 15W 30MHz2SC1627SI-N 80V 0.4A 0.8W 100MHz2SC1674SI-N 30V .02A 600MC RF/IF2SC1675SI-N 50V .03A 0.25W2SC1678SI-N 65V 3A 3W2SC1685SI-N 60V 0.1A 150MC UNI2SC1688SI-N 50V 30mA 0.4W 550MHz 2SC1708ASI-N 120V 50mA 0.2W 150MHz 2SC1729SI-N 35V 3.5A 16W 500MHz2SC1730SI-N 30V 0.05A 1.1GHz UHF2SC1740SI-N 40V 100mA 0.3W2SC1741SI-N 40V 0.5A 0.3W 250MHz2SC1756SI-N 300V 0.2A >50MHz2SC1760SI-N 100V 1A 7.9W 80MHz2SC1775ASI-N 120V 0.05A 0.2W UNI2SC1781SI-N 50V 0.5A 0.35W2SC1815SI-N 50V 0.15A 0.4W 80MHz2SC1815BLSI-N 60V 0.15A 0.4W B>350 2SC1815GRSI-N 60V 0.15A 0.4W B>200 2SC1815YSI-N 60V 0.15A 0.4W B>1202SC1827SI-N 100V 4A 30W 10MHz2SC1832N-DARL 500V 15A 150W B>10 2SC1841SI-N 120V 0.05A 0.5W2SC1844SI-N 60V 0.1A 0.5W 100MHz2SC1845SI-N 120V 0.05A 0.5W2SC1846SI-N 120V 0.05A 0.5W2SC1847SI-N 50V 1.5A 1.2W2SC1855SI-N 20V 20mA 0.25W 550MHz 2SC1871SI-N 450V 15A 150W <1/3us2SC1879N-DARL+D 120V 2A 0.8W B>12SC1890SI-N 90V 0.05A 0.3W 200MHz2SC1895SI-N 1500V 6A 50W 2MHz2SC1906SI-N 19V 0.05A 0.3W2SC1907SI-N 30V 0.05A 1100MHz2SC1913SI-N 150V 1A 15W 120MHz2SC1914SI-N 90V 50mA 0.2W 150MHz 2SC1921SI-N 250V 0.05A 0.6W2SC1922SI-N 1500V 2.5A 50W2SC1923SI-N 30V 20mA 10mW 550MHz 2SC1929SI-N 300V 0.4A 25W 80MHz2SC1941SI-N 160V 50mA 0.8W2SC1944SI-N 80V 6A PQ=16W2SC1945SI-N 80V 6A 20W2SC1946ASI-N 35V 7A 50W2SC1947SI-N 35V 1A 4W/175MHz2SC1953SI-N 150V 0.05A 1.2W 70MHz2SC1957SI-N 40V 1A 1.8W/27MHz2SC1959SI-N 30V 0.5A 0.5W 200MHz2SC1967SI-N 35V 2A 8W 470MHz2SC1968SI-N 35V 5A 3W 470MHz2SC1969SI-N 60V 6A 20W2SC1970SI-N 40V 0.6A 5W2SC1971SI-N 35V 2A 12.5W2SC1972SI-N 35V 3.5A 25W2SC1975SI-N 120V 2A 3.8W 50MHz2SC1980SI-N 120V 20mA 0.25W 200MHz 2SC1984SI-N 100V 3A 30W B=7002SC1985SI-N 80V 6A 40W 10MHz2SC2023SI-N 300V 2A 40W 10MHz2SC2026SI-N 30V 0.05A 0.25W2SC2027SI-N 1500/800V 5A 50W2SC2036SI-N 80V 1A PQ=1..4W2SC2053SI-N 40V 0.3A 0.6W 500MHz2SC2055SI-N 18V 0, 3A 0, 5W2SC2058SI-N 40V 0.05A 0.25W2SC2060SI-N 40V 0.7A 0.75W 150MHz 2SC2061SI-N 80V 1A 0.75W 120MHz2SC2068SI-N 300V 0.05A 95MHz2SC2073SI-N 150V 1.5A 25W 4MHz2SC2078SI-N 80V 3A 10W 150MHz2SC2086SI-N 75V 1A 0.45W/27MHz2SC2092SI-N 75V 3A 5W 27MHz2SC2094SI-N 40V 3.5A PQ>15W 175MHz 2SC2097SI-N 50V 15A PQ=85W2SC2120SI-N 30V 0.8A 0.6W 120MHz2SC2122SI-N 800V 10A 50W2SC2166SI-N 75V 4A 12.5W RFPOWER 2SC2168SI-N 200V 2A 30W 10MHz2SC2200SI-N 500V 7A 40W 1US2SC2209SI-N 50V 1.5A 10W 150MHz2SC2216SI-N 45V 50mA 0.3W 300MHz 2SC2228SI-N 160V 0.05A 0.75W >502SC2229SI-N 200V 50mA 0.8W 120MHz 2SC2230SI-N 200V 0.1A 0.8W 50MHz2SC2233SI-N 200V 4A 40W 8MHz2SC2235SI-N 120V 0.8A 0.9W 120MHz 2SC2236SI-N 30V 1.5A 0.9W 120MHz2SC2237SI-N 35V 2A PQ>7.5W 175MHz 2SC2238SI-N 160V 1.5A 25W 100MHz2SC2240SI-N 120V 50mA .3W 100MHz 2SC2261SI-N 180V 8A 80W 15MHz2SC2267SI-N 400/360V 0.1A 0.4W。
MMBT3904;2N3904TF;2N3904TFR;PZT3904;2N3904BU;中文规格书,Datasheet资料
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a = 25°C unless otherwise noted* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm 2.V EBO Emitter-Base Voltage6.0V I C Collector Current - Continuous200mA T J, T stgOperating and Storage Junction Temperature Range-55 to +150°CSymbolParameterMax.Units2N3904*MMBT3904**PZT3904P D Total Device Dissipation Derate above 25°C6255.03502.81,0008.0mW mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJAThermal Resistance, Junction to Ambient200357125°C/W* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% Ordering Information f = 10Hz to 15.7kHzSWITCHING CHARACTERISTICSt d Delay Time V CC = 3.0V, V BE = 0.5VI C = 10mA, I B1 = 1.0mA 35nst r Rise Time35nst s Storage Time V CC = 3.0V, I C = 10mA,I B1 = I B2 = 1.0mA 200nst f Fall Time50nsPart Number Marking Package Packing Method Pack Qty 2N3904BU2N3904TO-92BULK10000 2N3904TA2N3904TO-92AMMO2000 2N3904TAR2N3904TO-92AMMO2000 2N3904TF2N3904TO-92TAPE REEL2000 2N3904TFR2N3904TO-92TAPE REEL2000 MMBT39041A SOT-23TAPE REEL3000 MMBT3904_D87Z1A SOT-23TAPE REEL10000 PZT39043904SOT-223TAPE REEL2500Auto-SPM¥AX-CAP¥*BitSiC®Build it Now¥CorePLUS¥CorePOWER¥CROSSVOLT¥CTL¥Current Transfer Logic¥DEUXPEED®Dual Cool™ EcoSPARK®EfficientMax¥ESBC¥®Fairchild®Fairchild Semiconductor®FACT Quiet Series¥FACT®FAST®FastvCore¥FETBench¥FlashWriter®*FRFET®Global Power Resource SMGreen FPS¥Green FPS¥ e-Series¥G max¥GTO¥IntelliMAX¥ISOPLANAR¥Making Small Speakers Sound Louderand Better™MegaBuck¥MICROCOUPLER¥MicroFET¥MicroPak¥MicroPak2¥MillerDrive¥MotionMax¥Motion-SPM¥mWSaver¥OptoHiT¥OPTOLOGIC®OPTOPLANAR®®PowerTrench®PowerXS™Programmable Active Droop¥QFET®QS¥Quiet Series¥RapidConfigure¥¥Saving our world, 1mW/W/kW at a time™SignalWise¥SmartMax¥SMART START¥SPM®STEALTH¥SuperFET®SuperSOT¥-3SuperSOT¥-6SuperSOT¥-8SupreMOS®SyncFET¥Sync-Lock™®*TinyBoost¥TinyBuck¥TinyCalc¥TinyLogic®TINYOPTO¥TinyPower¥TinyPWM¥TinyWire¥TranSiC®TriFault Detect¥TRUECURRENT®*P SerDes¥UHC®Ultra FRFET¥UniFET¥VCX¥VisualMax¥VoltagePlus¥XS™* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a)are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website,, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status Definition分销商库存信息:FAIRCHILDMMBT39042N3904TF2N3904TFRPZT39042N3904BU MMBT3904_D87Z 2N3904TA2N3904TAR2N3904_J05Z2N3904CBU2N3904CTA2N3904NLBU2N3904_D10Z2N3904_D28Z2N3904_D81Z2N3904_J18Z2N3904_J25Z2N3904_J61Z2N3904_D27ZS00Z。
三极管数据手册
名称封装极性功能耐压电流功率频率配对管D633 28 NPN 音频功放开关 100V 7A 40W 达林顿9013 21 NPN 低频放大 50V 0.5A 0.625W 90129014 21 NPN 低噪放大 50V 0.1A 0.4W 150HMZ 90159015 21 PNP 低噪放大 50V 0.1A 0.4W 150MHZ 90149018 21 NPN 高频放大 30V 0.05A 0.4W 1000MHZ8050 21 NPN 高频放大 40V 1.5A 1W 100MHZ 85508550 21 PNP 高频放大 40V 1.5A 1W 100MHZ 80502N2222 21 NPN 通用 60V 0.8A 0.5W 25／200NS2N2369 4A NPN 开关 40V 0.5A 0.3W 800MHZ2N2907 4A NPN 通用 60V 0.6A 0.4W 26／70NS2N3055 12 NPN 功率放大 100V 15A 115W MJ29552N3440 6 NPN 视放开关 450V 1A 1W 15MHZ 2N66092N3773 12 NPN 音频功放开关 160V 16A 50W2N3904 21E NPN 通用 60V 0.2A2N2906 21C PNP 通用 40V 0.2A2N2222A 21铁 NPN 高频放大 75V 0.6A 0.625W 300MHZ2N6718 21铁 NPN 音频功放开关 100V 2A 2W2N5401 21 PNP 视频放大 160V 0.6A 0.625W 100MHZ 2N5551 2N5551 21 NPN 视频放大 160V 0.6A 0.625W 100MHZ 2N5401 2N5685 12 NPN 音频功放开关 60V 50A 300W2N6277 12 NPN 功放开关 180V 50A 250W9012 21 PNP 低频放大 50V 0.5A 0.625W 90132N6678 12 NPN 音频功放开关 650V 15A 175W 15MHZ9012 贴片 PNP 低频放大 50V 0.5A 0.625W 90133DA87A 6 NPN 视频放大 100V 0.1A 1W3DG6B 6 NPN 通用 20V 0.02A 0.1W 150MHZ3DG6C 6 NPN 通用 25V 0.02A 0.1W 250MHZ3DG6D 6 NPN 通用 30V 0.02A 0.1W 150MHZMPSA42 21E NPN 电话视频放大 300V 0.5A 0.625W MPSA92 MPSA92 21E PNP 电话视频放大 300V 0.5A 0.625W MPSA42 MPS2222A 21 NPN 高频放大 75V 0.6A 0.625W 300MHZ9013 贴片 NPN 低频放大 50V 0.5A 0.625W 90123DK2B 7 NPN 开关 30V 0.03A 0.2W3DD15D 12 NPN 电源开关 300V 5A 50W3DD102C 12 NPN 电源开关 300V 5A 50W3522V 5V稳压管A634 28E PNP 音频功放开关 40V 2A 10WA708 6 PNP 音频开关 80V 0.7A 0.8WA715C 29 PNP 音频功放开关 35V 2.5A 10W 160MHZA733 21 PNP 通用 50V 0.1A 180MHZA741 4 PNP 开关 20V 0.1A 70／120NSA781 39B PNP 开关 20V 0.2A 80／160NSA928 ECB PNP 通用 20V 1A 0.25WA933 21 PNP 通用 50V 0.1A 140MHZA940 28 PNP 音频功放开关 150V 1.5A 25W 4MHZ C2073 A966 21 PNP 音频激励输出 30V 1.5A 0.9W 100MHZ C2236 A950 21 PNP 通用 30V 0.8A 0.6WA968 28 PNP 音频功放开关 160V 1.5A 25W 100MHZ C2238 A1009 BCE PNP 功放开关 350V 2A 15WA1220P 29 PNP 音频功放开关 120V 1.5A 20W 150MHZA1013 21 PNP 视频放大 160V 1A 0.9W C2383A1015 21 PNP 通用 60V 0.1A 0.4W 8MHZ C18152N6050 12 PNP 音频功放开关 60V 12A 150W2N6051 12 PNP 音频功放开关 80V 12A 150WA1175 PNP 通用 60V 0.10A 0.25W 180MHZA1213 贴片 PNP 超高频 50V 0.15A 80MHZA719 ECB PNP 通用 30V 0.50A 0.625W 200MHZB12 G－PNP 音频 30V 0.05A 0.05WB1114 ECB PNP 通用贴片 20V 2A 180MHZB205 锗管 PNP 音频功放开关 80V 20A 80WB1215 BCE PNP 功放开关贴片 120V 3A 20W 130MHZC294 6 NPN 栾生对管 25V 0.05A 200MHZC1044 6 NPN 视放 45V 0.3A 2.2GHZC1216 6 NPN 高速开关 40V 0.2A T,20ｎSC1344 ECB NPN 通用低噪 30V 0.10 230MHZC1733 6 NPN 栾生对管 30V 0.05A 2GHZC1317 21ECB NPN 通用 30V 0.5A 0.625W 200MHZC546 21ECB NPN 高放 30V 0.03A 0.15W 600MHZC680 11 NPN 音频功放开关 200V 2A 30W 20MHZC665 12 NPN 音频功放开关 125V 5A 50W 15MHZC4581 BCE NPN 电源开关 600V 10A 65W 20MHZ?C4584 BCE NPN 电源开关 1200V 6A 65W 20MHZC4897 BCE NPN 行管 1500V 20A 150WC4928 BCE NPN 行管 1500V 15A 150WC5411 BCE NPN 彩显行管17” 1500V 14A 60WHQ1F3P 贴片 NPN 功放开关 20V 2A 2WTIP132 28 NPN 音频功放开关 100V 8A 70W TIP137A1020 21 PNP 音频开关 50V 2A 0.9WA1123 21 PNP 低噪放大 150V 0.05A 0.75WA1162 21D PNP 通用贴片 50V 0.15A 0.15WA1216 BCE PNP 功放开关 180V 17A 200W 20MHZ C2922A1265 BCE PNP 功放开关 140V 10A 100W 30MHZ C3182A1295 BCE PNP 功放开关 230V 17A 200W 30MHZ C3264A1301 BCE PNP 功放开关 160V 12A 120W 30MHZ C3280C3280 BCE NPN 功放开关 160V 12A 120W 30MHZ A1301A1302 BCE PNP 功放开关 200V 15A 120W 30MHZ C3281C3281 BCE NPN 功放开关 200V 15A 120W 30MHZ A1302A1358 BCE PNP 120V 1A 10W 120MHZA1444 BCE PNP 高速电源开关 100V 15A 30W 80MHZA1494 BCE PNP 功放开关 200V 17A 200W 20MHZ C3858 A1516 BCE PNP 功放开关 180V 12A 130W 25MHZA1668 BCE PNP 电源开关 200V 2A 25W 20MHZA1785 BCE PNP 驱动 120V 1A 1W 140MHZA1941 BCE PNP 音频功放形状 140V 10A 100W C5198C5198 BCE NPN 音频功放形状 140V 10A 100W A1941A1943 BCE PNP 功放开关 230V 15AA 150W C5200C5200 BCE NPN 功放开关 230V 15A 150W A1943A1988 BCE PNP 功放开关B449 锗管 12 PNP 功放开关 50V 3.5A 22.5WB647 21 PNP 通用 120V 1A 0.9W 140MHZ D667D667 21 NPN 通用 120V 1A 0.9W 140MHZ B649B1375 BCE PNP 音频功放 60V 3A 2W 9MHZD40C BCE NPN对讲机用40V 0.5A 40W 75MHB688 BCE PNP 音频功放开关 120V 8A 80W D718B734 39B PNP 通用 60V 1A 1W D774B649 29 PNP 视放 180V 1.5A 20W D669D669 29 NPN 视频放大 180V 1.5A 20W 140MHZ B649B669 28 PNP 达林顿功放 70V 4A 40WB675 28 PNP 达林顿功放 60V 7A 40WB673 28 PNP 达林顿功放 100V 7A 40WB631K 29 PNP 音频功放开关 120V 1A 8W 130MHZ D600K D600K 29 NPN 音频功放开关 120V 1A 8W 130MHZ B631K C3783 BCE NPN 高压高速开关 900V 5A 100WB1400 28B PNP 达林顿功放 120V 6A 25W D1590B744 29 PNP 音频功放开关 70V 3A 10WB1020 28 PNP 功放开关 100V 7A 40WB1240 39B PNP 功放开关 40V 2A 1W 100MHZB1185 28B PNP 功放开关 60V 3A 25W 70MHZ D1762B1079 30 PNP 达林顿功放 100V 20A 100W D1559B772 29 PNP 音频功放开关 40V 3A 10W D882B774 21 PNP 通用 30V 0.1A 0.25WB817 30 PNP 音频功放形状 160V 12A 100W D1047B834 28 PNP 功放开关 60V 3A 30WB1316 54B PNP 达林顿功放 100V 2A 10WB1317 BCE PNP 音频功放 180V 15A 150W D1975B1494 BCE PNP 达林顿功放 120V 20A 120W D2256B1429 BCE PNP 功放开关 180V 15A 150WC380 21 NPN 高频放大 35V 0.03A 250MHZC458 21 NPN 通用 30V 0.1A 230MHZC536 21 NPN 通用 40V 0.1A 180MHZ2N6609 12 PNP 音频功放开关 160V 15A 150W ＞2MHZ 2N3773 C3795 BCE NPN 高压高速开关 900V 5A 40WC2458 21ECB NPN 通用低噪 50V 0.15A 0.2WC3030 BCE NPN 开关管 900V 7A 80W. 达林顿C3807 BCE NPN 低噪放大 30V 2A 1.2W 260MHZC3858 BCE NPN 功放开关 200V 17A 200W 20MHZ A1494D985 29 NPN 达林顿功放150V ±1.5A 10WC2036 29 NPN 高放低噪 80V 1A 1－4WC2068 28E NPN 视频放大 300V 0.05A 1.5W 80MHZC2073 28 NPN 功率放大 150V 1.5A 25W 4MHZ A940C3039 28 NPN 电源开关 500V 7A 50WC3058 12 NPN 开关管 600V 30A 200WC3148 28 NPN 电源开关 900V 3A 40WC3150 28 NPN 电源开关 900V 3A 50WC3153 30 NPN 电源开关 900V 6A 100WC3182 30 NPN 功放开关 140V 10A 100W A1265C3198 21 NPN 高频放大 60V 0.15A 0.4W 130MHZ3DK4B 7 NPN 开关 40V 0.8A 0.8W3DK7C 7 NPN 开关 25V 0.05A 0.3W3D15D 12 NPN 电源开关 300V 5A 50WC2078 28 NPN 音频功放开关 80V 3A 10W 150MHZC2120 21 NPN 通用 30V 0.8A 0.6WC2228 21 NPN 视频放大 160V 0.05A 0.75WC2230 21 NPN 视频放大 200V 0.1A 0.8WC2233 28 NPN 音频功放开关 200V 4A 40WC2236 21 NPN 通用 30V 1.5A 0.9W A966C1733 小铁 NPN 孪生对管 30V 2GHZC1317 21EBC NPN 通用 30V 0.5A 0.625W 200MHZC2238 28 NPN 音频功放开关 160V 1.5A 25W 100MHZ A968C752 21 NPN 通用 30V 0.1A 300MHZC815 21 NPN 通用 60V 0.2A 0.25WC828 21 NPN 通用 45V 0.05A 0.25WC900 21 NPN 低噪放大 30V 0.03A 100MHZC945 21 NPN 通用 50V 0.1A 0.5W 250MHZC1008 21 NPN 通用 80V 0.7A 0.8W 50MHZC1162 21 NPN 音频功放 35V 1.5A 10WC1213 39B NPN 监视器专用 30V 0.5A 0.4WC1222 21 NPN 低噪放大 60V 0.1A 100MHZC1494 40A NPN 发射 36V 6A PQ=40W 175MHZC1507 28 NPN 视放 300V 0.2A 15WC1674 21 NPN HF/ZF 30V 0.02A 600MHZC1815 21 NPN 通用 60V 0.15A 0.4W 8MHZ A1015C1855 21F NPN HF/ZF 20V 0.02A 550MHZC1875 12 NPN 彩行 1500V 3.5A 50WC1906 21 NPN 高频放大 30V 0.05A 1000MHZC1942 12 NPN 彩行 1500V 3A 50WC1959 21 NPN 通用 30V 0.4A 0.5W 300MHZC1970 28 NPN 手机发射 40V 0.6A PQ=1.3W 175MHZ C1971 28A NPN 手机发射 35V 2A PQ-7.0W 175MHZ C1972 28A NPN 手机发射 35V 3.5A PQ=15W 175MHZ C2320 21 NPN 通用 50V 0.2A 0.3W 200MHZC2012 21 NPN 高放 30V 0.03A 200MHZC2027 12 NPN 行管 1500V 5A 50WD814 BCE NPN 低噪放大贴片 150V 0.05A 150MHZC5142 BCE NPN 彩行 1500V 20A 200WD998 BCE NPN 音频功放开关 120V 10A 80W。
2N3904(三极管)
C BETO-92CBEBCCSOT-223E NPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to Absolute Maximum Ratings* T A= 25°C unless otherwise notedParameter SOT-23Mark: 1A2N3904 / MMBT3904 / PZT3904查询2N3904供应商TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.PowerTrench QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER SMART START™SuperSOT™-3SuperSOT™-6SuperSOT™-8FASTr™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Rev. GACEx™Bottomless™CoolFET™CROSSVOLT ™DOME™E 2CMOS TM EnSigna TM FACT™FACT Quiet Series™FAST SyncFET™TinyLogic™UHC™VCX™Copyright © Each Manufacturing Company.All Datasheets cannot be modified without permission.This datasheet has been download from :100% Free DataSheet Search Site.Free Download.No Register.Fast Search System.。
2N3904
Diode Rectifier
Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF ( low capacitance ) & Varactor SOT-323 SOT-23 TO-252 / TO-263 / TO-220 / TO-3P TSSOP-8 / SOP-8 Switching Regulator / Charger pump DC-DC converter / PWM IC Step-up/down (Boost / Buck) LDO Regulator Ultra LDO Regulator SOT-323 / SOT-363 (Dual N , Dual P , P+N) SOT-23 / SOT-89 TO-252 / TO-263 TO-92 / TO-220 / TO-3P Triac / SCR / RF (1GHz ~ ) Digital SOT-23 / SOT-23-5 SOT-89 / TO-92 SOT-23-5 / SOT-323-5 Standard Sidac / Thyristor / EMI Filter TVS / ESD Arrays / Varistor (chip) Gastube arrester / 5~6 pin arrester Polymer resetable fuse / Thermal switch & sensor ----P1
2N3904;中文规格书,Datasheet资料
2N3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAs SILICON EPITAXIAL PLANAR NPNTRANSISTORs TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY sTHE PNP COMPLEMENTARY TYPE IS 2N3906APPLICATIONS s WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENTs SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE®February 2003ABSOLUTE MAXIMUM RATINGS1/5e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) -2N3904THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)O b2N39042N3904Ob s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.2N3904O b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )分销商库存信息: STM2N3904。
2N3904_datasheet
2N3903, 2N39042N3903 is a Preferred DeviceGeneral Purpose TransistorsNPN SiliconMAXIMUM RATINGSTHERMAL CHARACTERISTICS (Note 1.)Device Package Shipping ORDERING INFORMATION2N3903TO–925000 Units/Box Preferred devices are recommended choices for future use and best overall value.2N3903RLRM TO–922000/Ammo Pack 2N3904TO–925000 Units/Box 2N3904RLRA TO–922000/T ape & Reel 2N3904RLRE TO–922000/T ape & Reel 2N3904RLRM TO–922000/Ammo Pack 2N3904RLRP TO–922000/Ammo Pack 2N3904RL1TO–922000/T ape & Reel 2N3904ZL1TO–922000/Ammo PackELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL–SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICSFigure 1. Delay and Rise TimeEquivalent Test Circuit Figure 2. Storage and Fall TimeEquivalent Test Circuit-ā0010 < t 1 < 500 m * T otal shunt capacitance of test jig and connectorsTYPICAL TRANSIENT CHARACTERISTICSFigure 3. Capacitance REVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.0Figure 4. Charge DataI C , COLLECTOR CURRENT (mA)C A P A C I T A N C E (p F )T J = 25°C T J = 125°C7010020030050050T I M E (n s )5Figure 7. Storage Time I C , COLLECTOR CURRENT (mA)Figure 8. Fall TimeI C , COLLECTOR CURRENT (mA)1030720701002003005005051030720t , S T O R A G E T I M E (n s )s ′TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)Figure 9.f, FREQUENCY (kHz)46810122Figure 10.R S , SOURCE RESISTANCE (k OHMS)N F , N O I S E F I G U R E (d B )h PARAMETERS(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)Figure 11. Current GainI C , COLLECTOR CURRENT (mA)7010020030050Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , C U R R E N T G A I Nh , O U T P U T A D M I T T A N C E ( m h o s )Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.30.5 3.00.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h , I N P U T I M P E D A N C E (k O H M S )i e 0.10.21.02.0 5.0100.30.5 3.00.10.21.02.0 5.0100.30.5 3.0210.10.21.02.0 5.0100.30.5 3.0f e m -4TYPICAL STATIC CHARACTERISTICSFigure 15. DC Current GainI C , COLLECTOR CURRENT (mA)0.30.50.71.02.00.2h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.1F E Figure 16. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.2V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S )0CE Figure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 18. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )PACKAGE DIMENSIONSTO–92TO–226AACASE 29–11NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.DIM MIN MAX MIN MAXMILLIMETERSINCHESA0.1750.205 4.45 5.20B0.1700.210 4.32 5.33C0.1250.165 3.18 4.19D0.0160.0210.4070.533G0.0450.055 1.15 1.39H0.0950.105 2.42 2.66J0.0150.0200.390.50K0.500---12.70---L0.250--- 6.35---N0.0800.105 2.04 2.66P---0.100--- 2.54R0.115--- 2.93---V0.135--- 3.43---STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 14:PIN 1.EMITTER2.COLLECTOR3.BASEON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATIONJAPAN: ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@。
2n3904 数据表.pdf说明书
General Purpose TransistorsNPN SiliconMAXIMUM RATINGSRatingSymbol Value Unit Collector–Emitter Voltage V CEO 40Vdc Collector–Base Voltage V CBO 60Vdc Emitter–Base VoltageV EBO 6.0Vdc Collector Current — Continuous I C 200mAdc Total Device Dissipation @ T A = 25°C Derate above 25°CP D 6255.0mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°CP D 1.512Watts mW/°C Operating and Storage Junction Temperature RangeT J , T stg–55 to +150°CTHERMAL CHARACTERISTICS (1)CharacteristicSymbol Max Unit Thermal Resistance, Junction to Ambient R q JA 200°C/W Thermal Resistance, Junction to CaseR q JC83.3°C/WELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector–Emitter Breakdown Voltage (2)(I C = 1.0 mAdc, I B = 0)V (BR)CEO 40—Vdc Collector–Base Breakdown Voltage (I C = 10 m Adc, I E = 0)V (BR)CBO 60—Vdc Emitter–Base Breakdown Voltage (I E = 10 m Adc, I C = 0)V (BR)EBO6.0—Vdc Base Cutoff Current(V CE = 30 Vdc, V EB = 3.0 Vdc)I BL —50nAdc Collector Cutoff Current(V CE = 30 Vdc, V EB = 3.0 Vdc)I CEX—50nAdc1.Indicates Data in addition to JEDEC Requirements.2.Pulse Test: Pulse Width v 300 m s; Duty Cycle v 2.0%.Preferred devices are Motorola recommended choices for future use and best overall value.Order this documentby 2N3903/DMOTOROLASEMICONDUCTOR TECHNICAL DATA2N39032N3904*Motorola Preferred DeviceCASE 29–04, STYLE 1TO–92 (TO–226AA)123*COLLECTOR32BASE1EMITTERREV 22N39032N3904ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)CharacteristicSymbolMinMaxUnitON CHARACTERISTICSDC Current Gain (1)(I C = 0.1 mAdc, V CE = 1.0 Vdc)2N39032N3904(I C = 1.0 mAdc, V CE = 1.0 Vdc)2N39032N3904(I C = 10 mAdc, V CE = 1.0 Vdc)2N39032N3904(I C = 50 mAdc, V CE = 1.0 Vdc)2N39032N3904(I C = 100 mAdc, V CE = 1.0 Vdc)2N39032N3904h FE204035705010030601530————150300—————Collector–Emitter Saturation Voltage (1)(I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc V CE(sat)——0.20.3VdcBase –Emitter Saturation Voltage (1)(I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc)V BE(sat)0.65—0.850.95VdcSMALL–SIGNAL CHARACTERISTICSCurrent–Gain — Bandwidth Product(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)2N39032N3904f T250300——MHzOutput Capacitance(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C obo — 4.0pF Input Capacitance(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C ibo —8.0pF Input Impedance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h ie1.01.08.010k ΩVoltage Feedback Ratio(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h re0.10.5 5.08.0X 10–4Small–Signal Current Gain(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h fe50100200400—Output Admittance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe 1.040m mhos Noise Figure(I C = 100 m Adc, V CE = 5.0 Vdc, R S = 1.0 k Ω, f = 1.0 kHz)2N39032N3904NF——6.05.0dBSWITCHING CHARACTERISTICSDelay Time (V = 3.0 Vdc, V = 0.5 Vdc,t d —35ns Rise Time (CC BE I C = 10 mAdc, I B1 = 1.0 mAdc)t r —35ns Storage Time (V CC = 3.0 Vdc, I C = 10 mAdc,2N3903I B1 = I B2 = 1.0 mAdc)2N3904t s ——175200ns Fall Timet f—50ns1.Pulse Test: Pulse Width v 300 m s; Duty Cycle v2.0%.2N39032N3904Figure 1. Delay and Rise TimeEquivalent Test Circuit Figure 2. Storage and Fall TimeEquivalent Test Circuit+3 V27510 k 1N916C S < 4 pF*+3 V27510 kC S < 4 pF*< 1 ns–0.5 V+10.9 V300 nsDUTY CYCLE = 2%< 1 ns–9.1 V ′+10.9 VDUTY CYCLE = 2%t 110 < t 1 < 500 m s * Total shunt capacitance of test jig and connectorsTYPICAL TRANSIENT CHARACTERISTICSFigure 3. Capacitance REVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.00.1Figure 4. Charge DataI C , COLLECTOR CURRENT (mA)50001.0V CC = 40 V I C /I B = 10Q , C H A R G E (p C )3000200010005003002007001005070 2.0 3.0 5.07.01020305070100200C A P A C I T A N C E (p F )1.02.03.0 5.07.010*******.20.30.50.7Q TQ AC iboC oboT J = 25°C T J = 125°C2N39032N3904Figure 5. Turn–On TimeI C , COLLECTOR CURRENT (mA)7010020030050050Figure 6. Rise TimeI C , COLLECTOR CURRENT (mA)T I M E (n s )1.02.03.01020705100t , R I S E T I M E (n s )Figure 7. Storage Time I C , COLLECTOR CURRENT (mA)Figure 8. Fall TimeI C , COLLECTOR CURRENT (mA)5.07.03050200103072070100200300500501.0 2.0 3.010207051005.07.03050200103072070100200300500501.0 2.0 3.010207051005.07.03050200103072070100200300500501.0 2.0 3.010207051005.07.030502001030720r t , F A L L T I M E (n s )f t , S T O R A G E T I M E (n s )s ′V CC = 40 V I C /I B = 10V CC = 40 V I B1 = I B2I C /I B = 20I C /I B = 10I C /I B = 10t r @ V CC = 3.0 Vt d @ V OB = 0 V40 V 15 V 2.0 VI C /I B = 10I C /I B = 20I C /I B = 10I C /I B = 20t ′s = t s – 1/8 t f I B1 = I B2TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)Figure 9. f, FREQUENCY (kHz)468101220.1Figure 10.R S , SOURCE RESISTANCE (k OHMS)0N F , N O I S E F I G U R E (d B )1.02.04.01020400.20.4010046810122140.11.02.04.01020400.20.4100N F , N O I S E F I G U R E (d B )f = 1.0 kHz I C = 1.0 mAI C = 0.5 mAI C = 50 m AI C = 100 m ASOURCE RESISTANCE = 200 W I C = 1.0 mASOURCE RESISTANCE = 200 W I C = 0.5 mASOURCE RESISTANCE = 500 W I C = 100 m A SOURCE RESISTANCE = 1.0 k I C = 50 m A2N39032N3904h PARAMETERS(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)Figure 11. Current GainI C , COLLECTOR CURRENT (mA)7010020030050Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , C U R R E N T G A I Nh , O U T P U T A D M I T T A N C E ( m h o s )Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.30.5 3.00.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h , I N P U T I M P E D A N C E (k O H M S )i e 0.10.21.02.0 5.0100.30.5 3.00.10.21.02.0 5.0100.30.5 3.0210.10.21.02.0 5.0100.30.5 3.0f e m –4TYPICAL STATIC CHARACTERISTICSFigure 15. DC Current GainI C , COLLECTOR CURRENT (mA)0.30.50.71.02.00.20.1h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.5 2.0 3.01050700.20.30.11001.00.720030205.07.0F E V CE = 1.0 VT J = +125°C+25°C–55°C2N39032N3904Figure 16. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.20.1V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S )0.5 2.0 3.0100.20.301.00.7 5.07.0CE I C = 1.0 mAT J = 25°C0.070.050.030.020.0110 mA30 mA100 mAFigure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 18. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )1.02.0 5.01020500100–0.500.51.0060801201401601802040100C O E F F I C I E N T (m V / C )200–1.0–1.5–2.0200°T J = 25°C V BE(sat) @ I C /I B =10V CE(sat) @ I C /I B =10V BE @ V CE =1.0 V+25°C TO +125°C–55°C TO +25°C +25°C TO +125°C–55°C TO +25°Cq VC FOR V CE(sat)q VB FOR V BE(sat)2N39032N3904PACKAGE DIMENSIONSNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.DIMENSION F APPLIES BETWEEN P AND L.DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.RAPJL FBKGH SECTION X–XC VDNNX XSEATINGPLANEDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0220.410.55F 0.0160.0190.410.48G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500–––12.70–––L 0.250––– 6.35–––N 0.0800.105 2.04 2.66P –––0.100––– 2.54R 0.115––– 2.93–––V0.135–––3.43–––1STYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORCASE 029–04(TO–226AA)ISSUE AD2N39032N3904Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.How to reach us:USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;JAPAN: Nippon Motorola Ltd.; T atsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, P.O. Box 5405; Denver, Colorado 80217. 1–800–441–24473–14–2 T atsumi Koto–Ku, T okyo 135, Japan. 81–3–3521–8315MFAX: RMFAX0@ – TOUCHTONE 602–244–6609ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B T ai Ping Industrial Park, INTERNET: http://Design–51 Ting Kok Road, T ai Po, N.T., Hong Kong. 852–26629298。
2N3904中文资料_数据手册_参数
MMBT3904 / PZT3904 REV. B0 3典型的性能特征基极发射极导通电压对集电极电流 0.1 1 10 100 0.2 0.4 0.6 0.8 1一世 - 集电极电流（MA） C V = 5V CE 25°C 125°C - 40°C基极发射极饱和电压与集电极电流 0.1 1 10 100 0.4 0.6 0.8 1一世 - 集电极电流（MA） C β= 10 25°C 125°C - 40°C集电极 - 发射 极饱和电压与集电极电流 0.1 1 10 100 0.05 0.1 0.15一世 - 集电极电流（MA） 25°C C β= 10 125°C - 40°C集电极截止电流对环境温度 25 50 75 100 125 150 0.1 1 10 100 500 T - 环境温度（C）一个 V = 30V CB °电容与反向偏置电压 0.1 1 10 100 1 2 3 4五 10反向偏置电压（V） C OBO C IBO F = 1.0MHZ典型 的脉冲电流增益 VS COLLECTOR CURRENT 0.1 1 10 100 0 100 200 300 400 500一世 - 集电极电流（MA） - 40°C 25°C C V = 5V CE 125°C β βREV. B0 4 典型性能特征 （续）功率耗散VS环境温度 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1温度（℃） ? SOT-223 SOT-23 TO-92噪声系数与频率 0.1 1 10 100 0 2 4 6 8 10 12 F - 频率（KHZ） V = 5.0V CE一世 = 100 μA，R = 500 Ω C小号一世 = 1.0MA K Ω C小号一世 = 0.5MA [R = 200 Ω C小号 ? Ω噪声系数与源阻力 0.1 1 10 100 0 2 4 6 8 10 12 [R - 源阻力（ ）一世 = 100 μA C一世 = 1.0MA C小号一世 = 50 μA C一世 = 5.0MA C 0 40 60 80 100 120 140 160 20 180电流增益和相角与频率 1 10 100 1000 0五 10 15 20 25三十 35 40 45 50 F - 频率（MHZ） θ V = 40V CE一世 = 10毫安 C H FE开启 时间VS集电极电流 110 100五 10 100 500一世 - 集电极电流（MA）一世 = I = B1 C B2 我 C 10 40V 15V 2.0V ? @ V = 0V CB D ? @ V = 3.0V CC [R上升时间VS 集电极电流 1 10 100五 10 100 500一世 - 集电极电流（MA）一世 = I = B1 C B2 我 C 10 ? = 125℃ ? = 25℃ ? V = 40V CC ? Ω θ μA ? Ω μA μA Ω Ω μA （K Ω）
二极管数据手册：SCI 2N3903和2N3904常用二极管说明书
2N3903, 2N3904General Purpose TransistorsNPN SiliconFeatures•Pb−Free Packages are Available*MAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO40Vdc Collector−Base Voltage V CBO60Vdc Emitter−Base Voltage V EBO 6.0Vdc Collector Current − Continuous I C200mAdc Total Device Dissipation@ T A = 25°CDerate above 25°C P D6255.0mWmW/°CTotal Device Dissipation @ TC = 25°C Derate above 25°C P D1.512WmW/°COperating and Storage JunctionTemperature RangeT J, T stg−55 to +150°C THERMAL CHARACTERISTICS (Note 1)Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient R q JA200°C/WThermal Resistance, Junction−to−Case R q JC83.3°C/W Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Indicates Data in addition to JEDEC Requirements.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.MARKING DIAGRAMSSee detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.ORDERING INFORMATIONCOLLECTOR21EMITTER2N390xYWW GGx= 3 or 4Y= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)BENT LEADTAPE & REELAMMO PACKSTRAIGHT LEADBULK PACKTO−92CASE 29STYLE 1ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Max Unit OFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 2)(I C = 1.0 mAdc, I B = 0)V(BR)CEO40−Vdc Collector−Base Breakdown Voltage (I C = 10 m Adc, I E = 0)V(BR)CBO60−Vdc Emitter−Base Breakdown Voltage (I E = 10 m Adc, I C = 0)V(BR)EBO 6.0−Vdc Base Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc)I BL−50nAdc Collector Cutoff Current (V CE = 30 Vdc, V EB = 3.0 Vdc)I CEX−50nAdc ON CHARACTERISTICSDC Current Gain (Note 2)(I C = 0.1 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 1.0 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 10 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 50 mAdc, V CE = 1.0 Vdc)2N39032N3904 (I C = 100 mAdc, V CE = 1.0 Vdc)2N39032N3904h FE204035705010030601530−−−−150300−−−−−Collector−Emitter Saturation Voltage (Note 2) (I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc V CE(sat)−−0.20.3VdcBase−Emitter Saturation Voltage (Note 2) (I C = 10 mAdc, I B = 1.0 mAdc)(I C = 50 mAdc, I B = 5.0 mAdc)V BE(sat)0.65−0.850.95VdcSMALL−SIGNAL CHARACTERISTICSCurrent−Gain − Bandwidth Product(I C = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)2N39032N3904f T250300−−MHzOutput Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)C obo− 4.0pF Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)C ibo−8.0pFInput Impedance(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h ie1.01.08.010k WVoltage Feedback Ratio(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h re0.10.55.08.0X 10−4Small−Signal Current Gain(I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)2N39032N3904h fe50100200400−Output Admittance (I C = 1.0 mAdc, V CE = 10 Vdc, f = 1.0 kHz)h oe 1.040m mhosNoise Figure(I C = 100 m Adc, V CE = 5.0 Vdc, R S = 1.0 k W, f = 1.0 kHz)2N39032N3904NF−−6.05.0dBSWITCHING CHARACTERISTICSDelay Time(VCC = 3.0 Vdc, V BE = 0.5 Vdc,I C = 10 mAdc, I B1 = 1.0 mAdc)t d−35nsRise Time t r−35nsStorage Time(V CC = 3.0 Vdc, I C = 10 mAdc,2N3903I B1 = I B2 = 1.0 mAdc)2N3904t s−−175200nsFall Time t f−50ns 2.Pulse Test: Pulse Width v 300 m s; Duty Cycle v 2%.ORDERING INFORMATIONDevicePackage Shipping †2N3903RLRM TO −922000 / Ammo Pack 2N3904TO −925000 Units / Bulk 2N3904G TO −92(Pb −Free)5000 Units / Bulk 2N3904RLRA TO −922000 / Tape & Reel 2N3904RLRAG TO −92(Pb −Free)2000 / Tape & Reel 2N3904RLRM TO −922000 / Ammo Pack 2N3904RLRMG TO −92(Pb −Free)2000 / Ammo Pack 2N3904RLRPTO −922000 / Ammo Pack 2N3904RLRPG TO −92(Pb −Free)2000 / Ammo Pack 2N3904RL1G TO −92(Pb−Free)2000 / Tape & Reel 2N3904ZL1TO −922000 / Ammo Pack 2N3904ZL1GTO −92(Pb −Free)2000 / Ammo Pack†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.Figure 1. Delay and Rise Time Equivalent Test CircuitFigure 2. Storage and Fall Time Equivalent Test Circuit10 < t 1 < 500 m * T otal shunt capacitance of test jig and connectors* T otal shunt capacitance of test jig and connectorsTYPICAL TRANSIENT CHARACTERISTICSFigure 3. CapacitanceREVERSE BIAS VOLTAGE (VOLTS)2.03.05.07.0101.00.1Figure 4. Charge DataI C , COLLECTOR CURRENT (mA)50001.0Q , C H A R G E (p C )3000200010005003002007001005070 2.0 3.0 5.07.01020305070100200C A P A C I T A N C E (p F )1.02.03.0 5.07.010200.20.30.50.7T J = 25°C T J = 125°CFigure 5. Turn −On TimeI C , COLLECTOR CURRENT (mA)7010020030050050Figure 6. Rise TimeI C , COLLECTOR CURRENT (mA)T I M E (n s )1.02.03.01020705100t , R I S E T I M E (n s )Figure 7. Storage Time I C , COLLECTOR CURRENT (mA)Figure 8. Fall TimeI C , COLLECTOR CURRENT (mA)5.07.03050200103072070100200300500501.0 2.0 3.010207051005.07.03050200103072070100200300500501.0 2.0 3.0102055.07.03050103072070100200300500501.0 2.0 3.0102055.07.030501030720r t , F A L L T I M E (n s )f t , S T O R A G E T I M E (n s )s ′TYPICAL AUDIO SMALL −SIGNAL CHARACTERISTICSNOISE FIGURE VARIATIONS(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)Figure 9. f, FREQUENCY (kHz)46810122Figure 10.R S , SOURCE RESISTANCE (k OHMS)0N F , N O I S E F I G U R E (d B )04681012214N F , N O I S E F I G U R E (d B )Figure 11. Current GainI C , COLLECTOR CURRENT (mA)7010020030050Figure 12. Output AdmittanceI C , COLLECTOR CURRENT (mA)h , C U R R E N T G A I Nh , O U T P U T A D M I T T A N C E ( m h o s )Figure 13. Input Impedance I C , COLLECTOR CURRENT (mA)Figure 14. Voltage Feedback RatioI C , COLLECTOR CURRENT (mA)3010050510202.03.05.07.0101.00.10.21.02.0 5.00.5100.30.5 3.00.72.05.010201.00.20.5o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e h , I N P U T I M P E D A N C E (k O H M S )i e 0.10.21.02.0 5.0100.30.5 3.00.10.21.02.0 5.0100.30.5 3.0210.10.21.02.0 5.0100.30.5 3.0f e m -4h PARAMETERS(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)TYPICAL STATIC CHARACTERISTICSFigure 15. DC Current GainI C , COLLECTOR CURRENT (mA)0.30.50.71.02.00.2h , D C C U R R E N T G A I N (N O R M A L I Z E D )0.1F EFigure 16. Collector Saturation RegionI B , BASE CURRENT (mA)0.40.60.81.00.2V , C O L L E C T O R E M I T T E R V O L T A G E (V O L T S )0CE Figure 17. “ON” Voltages I C , COLLECTOR CURRENT (mA)0.40.60.81.01.20.2Figure 18. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (V O L T S )- 0.500.51.0C O E F F I C I E N T (m V / C )- 1.0- 1.5- 2.0°PACKAGE DIMENSIONSTO −92 (TO −226)CASE 29−11ISSUE AMNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.SECTION X −XPLANEDIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.1750.205 4.45 5.20B 0.1700.210 4.32 5.33C 0.1250.165 3.18 4.19D 0.0160.0210.4070.533G 0.0450.055 1.15 1.39H 0.0950.105 2.42 2.66J 0.0150.0200.390.50K 0.500---12.70---L 0.250--- 6.35---N 0.0800.105 2.04 2.66P ---0.100--- 2.54R 0.115--- 2.93---V0.135--- 3.43---NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.4.LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.SECTION X −XDIM MIN MAX MILLIMETERS A 4.45 5.20B 4.32 5.33C 3.18 4.19D 0.400.54G 2.40 2.80J 0.390.50K 12.70---N 2.04 2.66P 1.50 4.00R 2.93---V3.43---STRAIGHT LEAD BULK PACKBENT LEADTAPE & REEL AMMO PACKSTYLE 1:PIN 1.EMITTER2.BASE3.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at /site/pdf/Patent −Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
2N3904中文资料_数据手册_参数
2000年11月 - 修订版3 1出版订单编号： 2N3903 / D 2N3903,2N3904 2N3903是首选设备一般用途晶体管 NPN硅大额定值评分符 号值单元集电极 - 发射极电压 VCEO 40 VDC集电极 - 基极电压 VCBO 60 VDC发射极 - 基极电压 VEBO 6 VDC集电极电流 - 连 续我知道了 200 MADC器件总功耗 @ TA = 25°C减免25以上 C PD 625 5毫瓦毫瓦/ C器件总功耗 @ TC = 25°C减免25以上 C PD 1.5 12瓦毫瓦/ C操作和存储连接温度范围 TJ，TSTG -55到 +150 C 热特性 （注1）特性符号马克斯单元热阻，结到环境 [R θJA 200 °C / W热阻，交界处至凯斯 [R θJC 83.3 °C / W 1.除JEDEC要求外还指示数据.设备包运输订购信息 2N3903 TO-92 TO-92情况29风格1 5000个单位/箱 3 2 1首选设备是未来使用的推荐选择和好的整体价值. 2N3903RLRM TO-92 2000 / AMMO PACK集电极 3 2基础 1辐射源 2N3904 TO-92 5000个单位/箱 2N3904RLRA TO-92 2000 /卷带式 2N3904RLRE TO-92 2000 /卷带式 2N3904RLRM TO-92 2000 / AMMO PACK风格1 ? =年份 WW =工作周标记图 2N 3903 YWW 2N3904RLRP TO-92 2000 / AMMO PACK 2N 3904 YWW 2N3904RL1 TO-92 2000 /卷带式 2N3904ZL1 TO-92 2000 / AMMO PACK 3图1.延迟和上升时间等效测试电路图2.存储和下降时间等效测试电路 +3 V 275 10 K 1N916 CS <4 PF * +3 V 275 10 K CS <4 PF * <1NS -0.5V +10.9 V 300纳秒 DUTY CYCLE = 2％ <1NS +10.9 V DUTY CYCLE = 2％ T1 0 10 <T1 <500MS *测试夹具和连接器的总并联电容典型的瞬态特性图3.电容反向偏置电压（伏特） 2.0 3.0 5 7 10 1.0 0.1图4.收费数据 IC，集电极 电流（MA） 5000 1.0 VCC = 40V IC / IB = 10 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50
常用三极管型号及参数
常用三极管型号及参数常用的三极管型号及参数有很多，我在下面列出了一些常见的型号，并且提供了一些基本的参数说明。
1.NPN型三极管：- 2N2222：最大集电极电流(Ic)为800mA，最大集电极电压(Vceo)为30V，最大功耗(Pd)为500mW。
- 2N3904：最大集电极电流(Ic)为200mA，最大集电极电压(Vceo)为40V，最大功耗(Pd)为625mW。
- BC547：最大集电极电流(Ic)为100mA，最大集电极电压(Vceo)为45V，最大功耗(Pd)为625mW。
2.PNP型三极管：- 2N2907：最大集电极电流(Ic)为600mA，最大集电极电压(Vceo)为40V，最大功耗(Pd)为625mW。
- 2N3906：最大集电极电流(Ic)为200mA，最大集电极电压(Vceo)为40V，最大功耗(Pd)为625mW。
- BC557：最大集电极电流(Ic)为100mA，最大集电极电压(Vceo)为45V，最大功耗(Pd)为625mW。
3.功率三极管：- 2N3055：最大集电极电流(Ic)为15A，最大集电极电压(Vceo)为60V，最大功耗(Pd)为115W。
4.高频小信号三极管：- 2SC3355：最大集电极电流(Ic)为150mA，最大集电极电压(Vceo)为50V，最大功耗(Pd)为150mW。
- BF199：最大集电极电流(Ic)为25mA，最大集电极电压(Vceo)为20V，最大功耗(Pd)为250mW。
5.大功率RF三极管：- BLF278：最大集电极电流(Ic)为1500mA，最大集电极电压(Vceo)为65V，最大功耗(Pd)为200W。
- MRF151G：最大集电极电流(Ic)为10A，最大集电极电压(Vceo)为80V，最大功耗(Pd)为300W。
这些三极管的型号和参数只是一小部分常见的，还有很多其他型号和参数，根据具体的应用需求，可以选择不同的三极管来匹配电路设计。
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors
2N3904
TRANSISTOR (NPN)
FEATURE z NPN silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the PNP transistor 2N3906 is Recommended
z This transistor is also available in the SOT-23 case with
the type designation MMBT3904
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions
M in
T yp M ax U nit
Collector-base breakdown voltage V (BR)CBO I C =10μA, I E =
0 60 V
Collector-emitter breakdown voltage V (BR)CEO I C = 1mA , I B =0 40 V
Emitter-base breakdown voltage V (BR)EBO I E = 10μA, I C =
0 6 V
Collector cut-off current I CBO V CB =60V, I E =0 0.1 μA
Collector cut-off current I CEO V CE = 40V, I B =
0 0.1 μA
Emitter cut-off current I EBO V EB = 5V, I C =
0 0.1 μA
h FE1 V CE =1V, I C =10mA 100 400
h FE2 V CE =1V, I C =50mA 60
DC current gain
h FE3
V CE =1V, I C =100mA 30
Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =
5mA 0.3 V
Base-emitter saturation voltage V BE(sat) I C =50mA, I B =
5mA 0.95V Transition frequency f T
V CE =20V,I C =10mA,f =
100MHz 300
MH Z
Delay Time t d 35 ns Rise Time t r V CC =3V,V BE =0.5V, I C =10mA,I B1=1mA 35 ns
Storage Time t s 200 ns Fall Time
t f
V CC =3V, I C =10mA
I B1=I B2=1mA
50 ns
CLASSIFICATION OF h FE1
Rank O Y G
Range
100-200 200-300 300-400
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
【南京南山半导体有限公司 — 长电三极管选型资料】
0100
200
300
400
500
600
700
100
1000
10100
1000
0.11
10
30
T R A N S I T I O N F R E Q U E N C Y f T (M H z )
COLLECTOR CURRENT I C (mA)C O L L E C T O R P O W E R D I S S I P A T I O N P c (m W )
AMBIENT TEMPERATURE T a ()
℃3000
V —— I I V ——COLLECTOR CURRENT I C (mA)
B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )
300
30
COLLECTOR CURRENT I C
(mA)
D C C U R R
E N T G A I N h
F E
2N3904
Typical Characteristics
30
C O L L E C T O R -E M I T T E R S A T U R A T I O N
V O L T A G E V C E s a t (m V )
COLLECTOR CURRENT I c (mA)
V I ——V / V C / C ——
3
C O L L C E T O R C U R R E N T I C (m A )
BASE-EMMITER VOLTAGE V BE (V)
I h ——
C O L L E C T O R C U R R E N T I C (m A )
COLLECTOR-EMITTER VOLTAGE V CE (V)
C A P A C I T A N C E C (p F )
REVERSE BIAS VOLTAGE V (V)
【南京南山半导体有限公司 — 长电三极管选型资料】。