射频功放管MRF5S9070

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large -signal, common -source amplifier applications in 26 volt base station equipment.•Typical Single-Carrier N-CDMA Performance @ 880 MHz, V DD = 26 Volts,I DQ = 600 mA, P out = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Power Gain — 17.8 dB Drain Efficiency — 30%ACPR @ 750 kHz Offset — -47 dBc @ 30 kHz Bandwidth•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power•Characterized with Series Equivalent Large-Signal Impedance Parameters •Integrated ESD Protection•N Suffix Indicates Lead-Free Terminations •200°C Capable Plastic Package•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +68Vdc Gate-Source VoltageV GS -0.5, +15Vdc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 2191.25W W/°C Storage Temperature Range T stg -65 to +150°C Operating Junction TemperatureT J200°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (1)Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 70 W CW Case Temperature 78°C, 14 W CWR θJC0.800.93°C/WTable 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114-B) 2 (Minimum)Machine Model (per EIA/JESD22-A115-A) A (Minimum)Charge Device Model (per JESD22-C101-A)IV (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113D, IPC/JEDEC J-STD-020C3260°C1.Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.MRF5S9070NR1Rev. 3, 12/2004Freescale Semiconductor Technical DataMRF5S9070NR1MRF5S9070MR12RF Device DataFreescale SemiconductorMRF5S9070NR1 MRF5S9070MR1Table 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 68 Vdc, V GS = 0 Vdc)I DSS ——10µAdc Zero Gate Voltage Drain Leakage Current (V DS = 26 Vdc, V GS = 0 Vdc)I DSS ——1µAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1µAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 200 µA)V GS(th)2 2.74Vdc Gate Quiescent Voltage(V DS = 26 Vdc, I D = 600 mAdc)V GS(Q)— 3.7—Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 1.0 Adc)V DS(on)—0.180.22Vdc Forward Transconductance (V DS = 10 Vdc, I D = 4 Adc)g fs—4.7—SDynamic CharacteristicInput Capacitance(V DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C iss —126—pF Output Capacitance(V DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —34—pF Reverse Transfer Capacitance(V DS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—1.37—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 26 Vdc, I DQ = 600 mA, P out = 14 W Avg., f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. Ratio =9.8 dB @ 0.01% Probability on CCDF Power Gain G ps 1717.8—dB Drain EfficiencyηD 2930—%Adjacent Channel Power Ratio ACPR —-47-45dBc Input Return LossIRL—-19-9dBTypical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 921-960 MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 mA, P out = 60 W, f = 921-960 MHz Power Gain G ps —16.4—dB Drain Efficiency ηD —62—%Input Return LossIRL —-12—dB P out @ 1 dB Compression Point (f = 940 MHz)P1dB—68—WTypical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 921-960 MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 mA, P out = 25 W Avg., f = 921-960 MHz, GSM EDGE Signal Power Gain G ps —17—dB Drain Efficiency ηD —44—%Error Vector MagnitudeEVM — 1.5—%Spectral Regrowth at 400 kHz Offset SR1—-62—dBc Spectral Regrowth at 600 kHz OffsetSR2—-78—dBc (continued)MRF5S9070NR1 MRF5S9070MR13RF Device DataFreescale SemiconductorTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted) (continued)CharacteristicSymbolMinTypMaxUnitTypical GSM CW Performances (In Freescale GSM Test Fixture Optimized for 865-895 MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 mA, P out = 60 W, f = 865-895 MHz Power Gain G ps —16.4—dB Drain Efficiency ηD —59—%Input Return LossIRL —-15—dB P out @ 1 dB Compression Point (f = 880 MHz)P1dB—71—WTypical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 865-895 MHz, 50 οhm system) V DD = 26 Vdc, I DQ = 400 mA, P out = 25 W Avg., f = 865-895 MHz, GSM EDGE Signal Power Gain G ps —17—dB Drain Efficiency ηD —41—%Error Vector MagnitudeEVM — 1.35—%Spectral Regrowth at 400 kHz Offset SR1—-66—dBc Spectral Regrowth at 600 kHz OffsetSR2—-81—dBc4RF Device DataFreescale SemiconductorMRF5S9070NR1 MRF5S9070MR1Figure 1. MRF5S9070NR1(MR1) Test Circuit SchematicV V Z100.245″ x 0.270″ Microstrip Z110.110″ x 0.270″ Microstrip Z120.055″ x 0.270″ Microstrip Z130.512″ x 0.060″ Microstrip Z140.106″ x 0.060″ Microstrip Z150.930″ x 0.060″ Microstrip Z160.365″ x 0.060″ MicrostripPCBTaconic RF-35, 0.030″, εr = 3.5Z10.140″ x 0.060″ Microstrip Z20.141″ x 0.060″ Microstrip Z30.280″ x 0.060″ Microstrip Z40.500″ x 0.100″ Microstrip Z50.530″ x 0.270″ MicrostripZ60.155″ x 0.270″ x 0.530″Taper Z70.376″ x 0.530″ Microstrip Z80.116″ x 0.530″ Microstrip Z90.055″ x 0.530″ MicrostripTable 6. MRF5S9070NR1(MR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer B1Small Ferrite Bead, Surface Mount 2743019447Fair-Rite B2Large Ferrite Bead, Surface Mount 2743021447Fair-Rite C10.6-6.0 pF Variable Capacitor, Gigatrim 272715L Johanson C216 pF Chip Capacitor 100B160JP500X ATC C37.5 pF Chip Capacitor100B7R5JP500X ATC C4, C160.8-8.0 pF Variable Capacitor, Gigatrim 272915L Johanson C5, C615 pF Chip Capacitors100B150JP500X ATC C7, C8, C2010 µF, 35 V Tantalum Capacitors T491D106K035AS Kemet C9, C19, C220.58 µF Chip Capacitors 700A561MP150X ATC C10, C1818 pF Chip Capacitors100B180JP500X ATC C11100 µF, 50 V Electrolytic Capacitor 515D107M050BB6A Vishay -Dale C120.7 pF Chip Capacitor 100B0R7BP500X ATC C13, C1413 pF Chip Capacitors 100B130JP500X ATC C15 3.9 pF Chip Capacitor 100B3R9JP500X ATC C1722 pF Chip Capacitor100B180JP500X ATCC21470 µF, 63 V Electrolytic Capacitor SME63VB471M12X25LL United Chemi-Con L1, L212.5 nH Surface Mount Inductors A04T-5Coilcraft R1 1 k W Chip Resistor CRCW12061001F100Vishay -Dale R2560 k W Chip Resistor CRCW12065603F100Vishay -Dale R312 W Chip Resistor CRCW120612R0F100Vishay -Dale R427 W Chip ResistorCRCW120627R0F100Vishay -DaleMRF5S9070NR1 MRF5S9070MR15RF Device DataFreescale SemiconductorFigure 2. MRF5S9070NR1(MR1) Test Circuit Component LayoutFreescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.6RF Device DataFreescale SemiconductorMRF5S9070NR1 MRF5S9070MR1TYPICAL CHARACTERISTICS900820860−7045f, FREQUENCY (MHz)Figure 3. Class AB Broadband PerformanceG p s , P O W E R G A I N (d B )−30−15−18−21−24I N P U T R E T U R N L O S S (d B )I R L ,A C P R (d B c ), A L T (d B c )−2786587087588088589089519401835173016251514−4013−4512−5011−5510−609−65−1210015201P out , OUTPUT POWER (WATTS) PEPFigure 4. Two-Tone Power Gain versusOutput Power G p s , P O W E R G A I N (d B )1019181716100−60−201P out , OUTPUT POWER (WATTS) PEPFigure 5. Third Order Intermodulation Distortionversus Output PowerI M 3, T H I R D O R D E R I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )−25−30−35−40−45−50−55101008201−6060P out , OUTPUT POWER (WATTS) PEPFigure 6. Power Gain, Drain Efficiency andIMD versus Output Power G p s , P O W E R G A I N (d B )I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D ,101840162014012−2010−40100−90−101P out , OUTPUT POWER (WATTS) PEPFigure 7. Intermodulation Distortion Productsversus Output PowerI N T E R M O D U L A T I O N D I S T O R T I O N (d B c )I M D ,10−20−30−40−50−60−70−80ηD , D R A I N E F F I C I E N C Y (%)ηD , D R A I N E F F I C I E N C Y (%)MRF5S9070NR1 MRF5S9070MR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS37455527P in , INPUT POWER (dBm)Figure 8. Pulse CW Output Power versusInput Power P o u t , O U T P U T P O W E R (d B m )2829303132333435365453525150494847466201−8060P out, OUTPUT POWER (WATTS) AVG.Figure 9. N-CDMA ACPR, Power Gain and Drain Efficiency versus Output PowerG p s , P O W E R G A I N (d B )A C P R , A D J A C E N T C H A N N E L P O W E R R A T I O (dB c )10184********12−2010−408−6010082011070P out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain and Drain Efficiencyversus CW Output Power1860165014401230102010ηD , D R A I N E F F I C I E N C Y (%)ηD , D R A I N E F F I C I E N C Y (%)8RF Device DataFreescale SemiconductorMRF5S9070NR1 MRF5S9070MR1Figure 11. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω865875885 2.1 + j0.61.8 + j0.82.0 + j0.70.7 + j0.40.7 + j0.50.6 + j0.5V DD = 26 Vdc, I DQ = 600 mA, P out = 14 W Avg.Z o = 2 Ω8951.8 + j0.90.5 + j0.5Z source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching NetworkZ sourcef = 865 MHzf = 895 MHzZ loadf = 865 MHzf = 895 MHzMRF5S9070NR1 MRF5S9070MR19RF Device DataFreescale SemiconductorNOTES10RF Device Data Freescale SemiconductorMRF5S9070NR1 MRF5S9070MR1NOTESMRF5S9070NR1 MRF5S9070MR111RF Device DataFreescale SemiconductorPACKAGE DIMENSIONSTO-270-2PLASTICCASE 1265-08ISSUE GInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. 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