PESD12VV1BL SOD-882原装ESD保护二极管
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Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.
Diode capacitance as a function of reverse voltage; typical values
−VCL −VBR −VRWM
IR IRM −IRM −IR VRWM VBR VCL
−
+
−IPP −IPPM
006aab325
Fig 5.
V-I characteristics for a bidirectional ESD protection diode
aaa-002726
Fig 6.
ESD clamping test setup and waveforms
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PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
7. Application information
Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) machine model MIL-STD-883 (human body model)
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode cathode
1 2 1
sym045
Simplified outline
Graphic symbol
2
Transparent top view
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IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3B (human body model)
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Unit W A C C C
tp = 8/20 s
Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321).
[1]
Parameter rated peak pulse power rated peak pulse current junction temperature ambient temperature storage temperature
Conditions
[1]
Min 55 65
[1]
Max 290 7.8 150 +150 +150
The device is designed for the protection of one bidirectional data or signal line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both, positive and negative with respect to ground.
4. Marking
Table 4. Marking codes Marking code MW Type number PESD12VV1BL
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Tj Tamb Tstg
GND
GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
vertical scale = 2 kV/div horizontal scale = 10 ns/div GND GND
-
Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANS/IESD STM5-1-2008.
1.2 Features and benefits
Bidirectional ESD protection of one line Low diode capacitance Cd = 17 pF Rated peak pulse power: PPPM = 290 W Ultra low leakage current IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPPM = 7.8 A AEC-Q101 qualified
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3. Ordering information Package Name PESD12VV1BL DFN1006-2 Description leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.5 mm Version SOD882 Type number
[1] Device stressed with ten non-repetitive ESD pulses.
[1]
Min -
Max 30 400 10
Unit kV V kV
Table 7. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 8 kV
1.3 Applications
Computers and peripherals Audio and video equipment Cellular handsets and accessories Portable electronics Communication systems
10-2
95 9
Tamb = 25 C
f = 1 MHz; Tamb = 25 C
Fig 3.
Rated peak pulse power as a function of square pulse duration; typical values
IPPM IPP
Fig 4.
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol VRWM Cd Parameter reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Conditions Min Typ 17 Max 12 25 Unit V pF
[1] [2]
Conditions
Min 14.6 [1] [1] [2]
Typຫໍສະໝຸດ Baidu<1 15.7 17 0.7
Max 12 10 16.8 25 22 38 -
Unit V nA V pF V V
reverse standoff voltage reverse leakage current VRWM = 12 V breakdown voltage diode capacitance clamping voltage dynamic resistance IR = 5 mA f = 1 MHz; VR = 0 V IPP = 1 A IPPM = 7.8 A IR = 10 A
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PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
ESD TESTER
Rd 450 Ω RG 223/U 50 Ω coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 3 April 2012 Product data sheet
1. Product profile
1.1 General description
vertical scale = 20 V/div horizontal scale = 50 ns/div
unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter VRWM IRM VBR Cd VCL rdyn
50 Ω
Cs
IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω
DUT (DEVICE UNDER TEST)
vertical scale = 2 kV/div horizontal scale = 10 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div
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PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
aaa-002723 DDD
103 PPP (W) 102
&G S)
10
1 10-4
10-3 tp (μs)
001aaa631
120 IPP (%) 80 100 % IPP; 8 μs
001aaa630
IPP 100 % 90 %
e−t 50 % IPP; 20 μs
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (μs) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321
Diode capacitance as a function of reverse voltage; typical values
−VCL −VBR −VRWM
IR IRM −IRM −IR VRWM VBR VCL
−
+
−IPP −IPPM
006aab325
Fig 5.
V-I characteristics for a bidirectional ESD protection diode
aaa-002726
Fig 6.
ESD clamping test setup and waveforms
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
7. Application information
Table 6. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) machine model MIL-STD-883 (human body model)
2. Pinning information
Table 2. Pin 1 2 Pinning Description cathode cathode
1 2 1
sym045
Simplified outline
Graphic symbol
2
Transparent top view
WWW.DCY-CHINA.NET
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3B (human body model)
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Unit W A C C C
tp = 8/20 s
Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321).
[1]
Parameter rated peak pulse power rated peak pulse current junction temperature ambient temperature storage temperature
Conditions
[1]
Min 55 65
[1]
Max 290 7.8 150 +150 +150
The device is designed for the protection of one bidirectional data or signal line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both, positive and negative with respect to ground.
4. Marking
Table 4. Marking codes Marking code MW Type number PESD12VV1BL
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPPM IPPM Tj Tamb Tstg
GND
GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
vertical scale = 2 kV/div horizontal scale = 10 ns/div GND GND
-
Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321. Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANS/IESD STM5-1-2008.
1.2 Features and benefits
Bidirectional ESD protection of one line Low diode capacitance Cd = 17 pF Rated peak pulse power: PPPM = 290 W Ultra low leakage current IRM < 1 nA ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPPM = 7.8 A AEC-Q101 qualified
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
3. Ordering information
Table 3. Ordering information Package Name PESD12VV1BL DFN1006-2 Description leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.5 mm Version SOD882 Type number
[1] Device stressed with ten non-repetitive ESD pulses.
[1]
Min -
Max 30 400 10
Unit kV V kV
Table 7. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 8 kV
1.3 Applications
Computers and peripherals Audio and video equipment Cellular handsets and accessories Portable electronics Communication systems
10-2
95 9
Tamb = 25 C
f = 1 MHz; Tamb = 25 C
Fig 3.
Rated peak pulse power as a function of square pulse duration; typical values
IPPM IPP
Fig 4.
1.4 Quick reference data
Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol VRWM Cd Parameter reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Conditions Min Typ 17 Max 12 25 Unit V pF
[1] [2]
Conditions
Min 14.6 [1] [1] [2]
Typຫໍສະໝຸດ Baidu<1 15.7 17 0.7
Max 12 10 16.8 25 22 38 -
Unit V nA V pF V V
reverse standoff voltage reverse leakage current VRWM = 12 V breakdown voltage diode capacitance clamping voltage dynamic resistance IR = 5 mA f = 1 MHz; VR = 0 V IPP = 1 A IPPM = 7.8 A IR = 10 A
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
ESD TESTER
Rd 450 Ω RG 223/U 50 Ω coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
Rev. 1 — 3 April 2012 Product data sheet
1. Product profile
1.1 General description
vertical scale = 20 V/div horizontal scale = 50 ns/div
unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform (IEC 61000-4-2 network)
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter VRWM IRM VBR Cd VCL rdyn
50 Ω
Cs
IEC 61000-4-2 network Cs = 150 pF; Rd = 330 Ω
DUT (DEVICE UNDER TEST)
vertical scale = 2 kV/div horizontal scale = 10 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div
WWW.DCY-CHINA.NET
PESD12VV1BL
Very low capacitance bidirectional ESD protection diode
aaa-002723 DDD
103 PPP (W) 102
&G S)
10
1 10-4
10-3 tp (μs)
001aaa631
120 IPP (%) 80 100 % IPP; 8 μs
001aaa630
IPP 100 % 90 %
e−t 50 % IPP; 20 μs
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (μs) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5 and IEC 61643-321