PZTA42贴片三极管 SOT-223三极管封装PZTA42参数

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
包装规格（Packing spec）：
封装 载带/盖带
卷盘
PKG
tape
Reel
包装箱 Box
13” SOT223 IC-ZD-04 （IC-JP-01） IC14#
只/盘 盘/盒
只/盒
pcs/reel reHale Waihona Puke Baidul/box pcs/box
2500
2
5000
盒/箱
只/箱
box/carton pcs/carton
0.026
0.032
0.010
0.014
0.244
0.252
0.114
0.122
0.130
0.146
0.269
0.278
0.091(BSC)
0.177
0.185
0.035
0.045
0°
10°
SOT223 包装（SOT223 PACKING）
编带包装（Tape&Reel Packing）：
1.包装流程图(Packing procedure)：
8
40000
2. 7 寸 包装流程图(Packing procedure)：
2 包装规格（Packing spec）：
封装 载带/盖带
卷盘
包装箱
PKG
tape
Reel
Box
只/盘 盘/盒
只/盒
pcs/reel reel/box pcs/box
7”盘 SOT-23 包
SOT-223 IC-ZD-04 (IC-JP-04) 装箱 *1 1000
Symbol Para
meter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
ICM
SOT-223
FEATURES · High breakdown voltage ·Low collector-emitter saturation voltage ·Complementary type: PZTA92(PNP)
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA42 TRANSISTOR (NPN)
0.660
0.820
0.250
0.350
6.200
6.400
2.900
3.100
3.300
3.700
6.830
7.070
2.300(BSC)
4.500
4.700
0.900
1.150
0°
10°
Dimensions In Inches
Min
Max
0.060
0.071
0.000
0.004
0.059
0.067
10
10000
盒/箱
只/箱
box/carton pcs/carton
4
40000
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol Test conditions
pF
B,May,2012
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
Symbol
A A1 A2 b c D D1 E E1 e e1 L θ
Dimensions In Millimeters
Min
Max
1.520
1.800
0.000
0.100
1.500
1.700
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=200V,IE=0
IEBO
VEB=6V,IC=0
hFE(1) VCE=10V,IC=1mA
hFE(2) VCE=10V,IC=10mA
hFE(3) VCE=10V,IC=30mA
Collector Current -Pulsed
0.5
A
PC
Collector Power Dissipation
1
W
Tj
Junction Temperature
Tstg
Storage Temperature
150
℃
-55~150
℃
1. BASE 2. COLLECTOR 3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
fT
VCE=20V,IC=10mA,f=100MHz
Cob
VCB=20V,IE=0,f=1MHz
Min Typ Max Unit
300
V
300
V
6
V
0.1
μA
0.1
μA
25
40
40
0.5
V
0.9
V
50
MHz
3