MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

A,Oct,2010

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

MMST4403 TRANSISTOR (PNP)

FEATURES

● Complementary To MMST4401

● Small Surface Mount Package

MARKING:K3T

MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol

Parameter Value Unit V CBO

Collector-Base Voltage -40 V V CEO

Collector-Emitter Voltage -40 V V EBO

Emitter-Base Voltage -5 V I C

Collector Current -600 mA P C

Collector Power Dissipation 200 mW R ΘJA

Thermal Resistance From Junction To Ambient 625 ℃/W T j

Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T

a =25℃ unless otherwise specified) Parameter

Symbol Test conditions Min Typ Max

Unit Collector-base breakdown voltage

V (BR)CBO I C =-100µA, I E =0 -40 V Collector-emitter breakdown voltage

V (BR)CEO I C =-1mA, I B =0 -40 V Emitter-base breakdown voltage

V (BR)EBO I E =-100µA, I C =0 -5 V Collector cut-off current

I CBO V CB =-35V, I E =0 -100 nA Collector cut-off current I CEO V CE =-35V, I B =0

-500 nA V CE =-1V, I C =-100µA

30 V CE =-1V, I C =-1mA

60 V CE =-1V, I C =-10mA

100 V CE =-2V, I C =-150mA

100 300 DC current gain h FE V CE =-2V, I C =-500mA

20 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage

V CE(sat) I C =-500mA, I B =-50mA -0.75 V I C =-150mA, I B =-15mA -0.75 -0.95 V Base-emitter saturation voltage

V BE(sat) I C =-500mA, I B =-50mA -1.3 V Transition frequency

f T V CE =-10V,I C =-20mA , f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8.5 pF

【南京南山半导体有限公司 — 长电三极管选型资料】

【南京南山半导体有限公司 — 长电三极管选型资料】

The bottom gasket

The top gasket

3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box

with the tape Seal the box

with the tape Stamp “EMPTY”

on the empty box Inner Box: 210mm ×208mm ×２０３m m Outer Box: 440mm ×440mm ×230mm