MMST4403贴片三极管 SOT-323三极管封装MMST4403规格参数

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SOT323封装二极管

NC
K
K
NC
A A
BAT54W
K2
A
K2
A
K1 K1
BAT54AW
A2
K
A2
K
A1 A1
BAT54CW
K2
A2
K1
A2
K2
K1
A1
A1
BAT54SW
SOT-323
A 86 K
BAT54J SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
C(pF) 10
5
2
1
1
2
VR(V)
5
10
F=1MHz Tj=25°C
20 30
Zth(j-a)/Rth(j-a) 1.00
δ = 0.5
0.10
δ = 0.2 δ = 0.1
Single pulse
0.01 1E-3
1E-2
T
tp(s) 1E-1 1E+0
δ=tp/T 1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printedcircuit board FR4, copper thickness: 35µm.)
Tj(°C)
1E-2
5
10
15
20
25
30
0
25
50
75 100 125 150
Fig. 4: Junction capacitance versus reverse voltage applied (typical values).

MMBT4403L SOT-23(TO-236)规格书推荐

MMBT4403L, SMMBT4403LSwitching TransistorPNP SiliconFeatures•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO−40Vdc Collector−Base Voltage V CBO−40Vdc Emitter−Base Voltage V EBO−5.0Vdc Collector Current − Continuous I C−600mAdc Collector Current − Peak I CM−900mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR−5 Board (Note 1) @T A = 25°CDerate above 25°C P D2251.8mWmW/°CThermal Resistance, Junction−to−Ambient R q JA556°C/WTotal Device Dissipation Alumina Substrate, (Note 2) @T A = 25°C Derate above 25°C P D3002.4mWmW/°CThermal Resistance, Junction−to−Ambient R q JA417°C/WJunction and Storage Temperature T J, T stg−55 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.*Transient pulses must not cause the junction temperature to be exceeded.1.FR−5 = 1.0 0.75 0.062 in.2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.SOT−23 (TO−236)CASE 318STYLE 6COLLECTOR12EMITTERDevice Package Shipping†ORDERING INFORMATIONMMBT4403LT1G SOT−23(Pb−Free)3000 / Tape & ReelMMBT4403LT3G SOT−23(Pb−Free)10,000 / Tape &Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.12T M GG2T= Specific Device Code*M= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAM*Specific Device Code, Date Code or overbarorientation and/or location may vary depend-ing upon manufacturing location. This is arepresentation only and actual devices maynot match this drawing exactly.SMMBT4403LT1G SOT−23(Pb−Free)3000 / Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (Note 3)(I C = −1.0 mAdc, I B = 0)V (BR)CEO −40−Vdc Collector−Base Breakdown Voltage (I C = −0.1 mAdc, I E = 0)V (BR)CBO −40−Vdc Emitter−Base Breakdown Voltage (I E = −0.1 mAdc, I C = 0)V (BR)EBO −5.0−Vdc Base Cutoff Current (V CE = −35 Vdc, V EB = −0.4 Vdc)I BEV −−0.1m Adc Collector Cutoff Current (V CE = −35 Vdc, V EB = −0.4 Vdc)I CEX−−0.1m AdcON CHARACTERISTICS DC Current Gain(I C = −0.1 mAdc, V CE = −1.0 Vdc)(I C = −1.0 mAdc, V CE = −1.0 Vdc)(I C = −10 mAdc, V CE = −1.0 Vdc)(Note 3)(I C = −150 mAdc, V CE = −2.0 Vdc)(Note 3)(I C = −500 mAdc, V CE = −2.0 Vdc)h FE306010010020−−−300−−Collector−Emitter Saturation Voltage (Note 3)(I C = −150 mAdc, I B = −15 mAdc)(I C = −500 mAdc, I B = −50 mAdc)V CE(sat)−−−0.4−0.75VdcBase −Emitter Saturation Voltage (Note 3)(I C = −150 mAdc, I B = −15 mAdc)(I C = −500 mAdc, I B = −50 mAdc)V BE(sat)−0.75−−0.95−1.3VdcSMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (I C = −20 mAdc, V CE = −10 Vdc, f = 100 MHz)f T 200−MHz Collector−Base Capacitance (V CB = −10 Vdc, I E = 0, f = 1.0 MHz)C cb −8.5pF Emitter−Base Capacitance (V BE = −0.5 Vdc, I C = 0, f = 1.0 MHz)C eb −30pF Input Impedance (I C = −1.0 mAdc, V CE = −10 Vdc, f = 1.0 kHz)h ie 1.515k W Voltage Feedback Ratio (I C = −1.0 mAdc, V CE = −10 Vdc, f = 1.0 kHz)h re 0.18.0X 10−4Small−Signal Current Gain (I C = −1.0 mAdc, V CE = −10 Vdc, f = 1.0 kHz)h fe 60500−Output Admittance(I C = −1.0 mAdc, V CE = −10 Vdc, f = 1.0 kHz)h oe1.0100m MhosSWITCHING CHARACTERISTICS Delay Time (V CC = −30 Vdc, V EB= −2.0 Vdc,I C = −150 mAdc, I B1 = −15 mAdc)t d −15nsRise Time t r −20Storage Time (V CC = −30 Vdc, I C = −150 mAdc,I B1 = I B2 = −15 mAdc)t s −225nsFall Timet f−30Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.3.Pulse Test: Pulse Width v 300m s, Duty Cycle v 2.0%.Figure 1. Turn−On Time Figure 2. Turn−Off TimeSWITCHING TIME EQUIVALENT TEST CIRCUIT*Total shunt capacitance of test jig connectors, and oscilloscopeFigure 3. Charge Data I C , COLLECTOR CURRENT (mA)Q , C H A R G E (n C )2.03.05.07.0101.00.10.70.5Figure 4. Turn−On TimeI C , COLLECTOR CURRENT (mA)203050107.0Figure 5. Rise Time I C , COLLECTOR CURRENT (mA)Figure 6. Storage TimeI C , COLLECTOR CURRENT (mA)25°C100°CTRANSIENT CHARACTERISTICS0.30.2t s , S T O R A G E T I M E (n s )′t , T I M E (n s )701001020507010050030203050107.070100100705020030t r , R I S E T I M E (n s )6842Figure 7. Frequency Effectsf, FREQUENCY (kHz)SMALL−SIGNAL CHARACTERISTICS NOISE FIGUREV CE = −10 Vdc, T A = 25°C; Bandwidth = 1.0 HzN F , N O I S E F I G U R E (d B )61042N F , N O I S E F I G U R E (d B )Figure 8. Source Resistance EffectsR S , SOURCE RESISTANCE (OHMS)h PARAMETERSV CE = 10 Vdc, f = 1.0 kHz, T A = 25°CThis group of graphs illustrates the relationship between h fe and other “h” parameters for this series of transistors. To obtain these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph.h i e , I N P U T I M P E D A N C E (O H M S )Figure 9. Input ImpedanceI C , COLLECTOR CURRENT (mAdc)100 k 10020 k 10 k 5 k 2 k 1 kFigure 10. Voltage Feedback Ratio I C , COLLECTOR CURRENT (mAdc)Figure 11. Output AdmittanceI C , COLLECTOR CURRENT (mAdc)5001.05020105.02.05.00.50.2h , O U T P U T A D M I T T A N C E ( m h o s )o e h , V O L T A G E F E E D B A C K R A T I O (X 10 )r e m -450 k 50020010100I C , COLLECTOR CURRENT (A)250300350450100h , D C C U R R E N T G A I N0.011500.1F E 0.0010.0001150200400Figure 12. DC Current GainI b , BASE CURRENT (mA)Figure 13. Collector Saturation Region0.20.40.60.81.20.0010101001.0Figure 14. Collector−Emitter SaturationVoltage vs. Collector CurrentFigure 15. Temperature CoefficientsI C , COLLECTOR CURRENT (mA)0.501.01.52.0C O E F F I C I E N T (m V /C )° 2.50.010.11I C , COLLECTOR CURRENT (A)0.150.200.300.350.05V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (V )0.010.1010.00010.0010.100.25V , C O L L E C T O R -E M I T T E R V O L T A G E (V )CEFigure 16. Base−Emitter Saturation Voltage vs.Collector CurrentFigure 17. Base−Emitter Turn On Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (A)I C , COLLECTOR CURRENT (A)V B E (s a t ), B A S E −E M I T T E R S A T U R A -T I O N V O L T A G E (V )V B E (o n ), B A S E −E M I T T E R T U R N O N V O L T A G E (V )Figure 18. Input Capacitance vs. Emitter BaseVoltage Figure 19. Output Capacitance vs. CollectorBase VoltageV eb , EMITTER BASE VOLTAGE (V)V cb , COLLECTOR BASE VOLTAGE (V)6321101520253540402015503791315C i b o , I N P U T C A P A C I T A N C E (p F )C o b o , O U T P U T C A P A C I T A N C E (p F )304510253035115Figure 20. Safe Operating Area Figure 21. Current−Gain−Bandwidth ProductV CE , COLLECTOR EMITTER VOLTAGE (V)I C , COLLECTOR CURRENT (mA)I C , C O L L E C T O R C U R R E N T (m A )f T , C U R R E N T −G A I N −B A N D W I D T H (M H z )PACKAGE DIMENSIONSSOT−23 (TO−236)CASE 318−08ISSUE ARNOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.SOLDERING FOOTPRINT*DIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.000b 0.370.440.500.015c 0.080.140.200.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°TOP VIEWEND VIEWDIMENSIONS: MILLIMETERS3X3XRECOMMENDED*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTORON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage /site/pdf/Patent−Marking.pdf ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer PUBLICATION ORDERING INFORMATION。

MMBT3906 2A三极管 SOT23 0.2A 40V PNP贴片三极管

SOT-23塑封封装PNP 半导体三极管。

Silicon PNP transistor in a SOT-23 Plastic Package.高h FE ，低V CE(sat)。

High DC Current Gain, Low Collector to Emitter Saturation Voltage.用于普通放大及开关。

General purpose amplifier and switching.PIN 1：Base PIN 2：EmitterPIN 3：Collector放大及印章代码 / h FE Classifications & Markingh FE Range100～300Marking 2A描述 / Descriptions特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit引脚排列 / Pinning231SxinenMMBT3906参数Parameter符号Symbol数值Rating单位UnitCollector to Base Voltage V CBO-40 V Collector to Emitter Voltage V CEO-40 V Emitter to Base Voltage V EBO-5.0 V Collector Current I C -200 mA Collector Power Dissipation P C300 mW Junction Temperature T j150 ℃Storage Temperature Range T stg-55～150 ℃参数Parameter符号Symbol测试条件Test Conditions最小值Min典型值Typ最大值Max单位UnitCollector to Base BreakdownVoltageV CBO I C=-10μA I E=0 -40 V Collector to Emitter BreakdownVoltageV CEO I C=-1.0mA I B=0 -40 V Emitter to Base BreakdownVoltageV EBO I E=-10μA I C=0 -5.0 V Collector Cut-Off Current I CBO V CB=-30V I E=0 -0.05μA Emitter Cut-Off Current I EBO V EB=-3.0V I C=0 -0.05μADC Current Gain h FE(1)V CE=-1.0V I C=-10mA 100 300 h FE(2)V CE=-1.0V I C=-100mA30h FE(3)V CE=-1.0V I C=-50mA 60h FE(4)V CE= -1.0V I C=-1.0mA80h FE(5)V CE=-1.0V I C=-0.1mA60Collector-Emitter Saturation voltage V CE(sat) (1) I C=-10mA I B=-1.0mA -0.25V V CE(sat) (2)I C=-50mA I B=-5.0mA -0.4VBase-Emitter Saturation Voltage V BE(sat) (1)I C=-10mA I B=-1.0mA -0.65 -0.85VV BE(sat) (2)I C=-50mA I B=-5.0mA -0.95VTransition Frequency f T V CE=-20V I C=-10mAf=100MHz250 MHz极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃)参数 Parameter符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值Max 单位Unit Output Capacitance C obV CB =-5.0V f = 1.0MHz 4.5 pF Storage Time t stg V CC =-3.0V I C =-10mAI B1=-I B2=-1.0mA225 nsFall Time t f V CC =-3.0V I C =-10mAI B1=-I B2=-1.0mA75 nsDelay Time t d V CC =-3.0V V BE =-0.5VI C =-10mA I B1=-1.0mA 35 nsRise Time t r V CC =-3.0V V BE =-0.5VI C =-10mA I B1=-1.0mA35 nsInput Capacitance C ibV EB =-0.5Vf = 1.0MHz 10 pF电性能参数 / Electrical Characteristics(Ta=25℃)电参数曲线图 / Electrical Characteristic Curve外形尺寸图 / Package Dimensions印章说明 / Marking Instructions2A Array说明：2A：为型号代码Note:2A：Product Type Code回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free)说明：Note:1、预热温度25～150℃，时间60～90sec; 1.Preheating:25~150℃, Time:60~90sec.2、峰值温度245±5℃，时间持续为5±0.5sec; 2.PeakTemp.:245±5℃, Duration:5±0.5sec.3、焊接制程冷却速度为2～10℃/sec. 3.Cooling Speed: 2~10℃/sec.耐焊接热试验条件/ Resistance to Soldering Heat Test Conditions温度：260±5℃时间：10±1sec.Temp.:260±5℃Time:10±1 sec包装规格 / Packaging SPEC.卷盘包装/ REELPackage Type 封装形式Units包装数量 Dimension包装尺寸 (unit：mm3)Units/Reel只/卷盘Reels/Inner Box卷盘/盒Units/Inner Box只/盒Inner Boxes/Outer Box盒/箱Units/Outer Box只/箱Reel Inner Box盒 OuterBox箱SOT-23 3,000 10 30,000 6 180,000 7〞×8 180×120×180 390×385×205 使用说明/ Notices。

2SA1611贴片三极管 SOT-323三极管封装2SA1611参数

Dimensions In Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.3502.150 Nhomakorabea2.450
0.650 TYP.
1.200
1.400
0.525 REF.
0.260
0.460
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
Collector output capacitance
Cob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE
RANK
RANGE

FOSAN富信电子三极管 MMBT4403-产品规格书

安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT4403 SOT-23Bipolar Transistor双极型三极管▉Features特点PNP Switching开关▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO-40VCollector-Emitter Voltage集电极发射极电压V CEO-40V Emitter-Base Voltage发射极基极电压V EBO-5V Collector Current集电极电流I C-600mA Power dissipation耗散功率P C(T a=25℃)300mW Thermal Resistance Junction-Ambient热阻RΘJA417℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Marking产品打标MMBT4403=2TANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT4403■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage集电极基极击穿电压(I C =-10uA ，I E =0)BV CBO -40——V Collector-Emitter Breakdown Voltage 集电极发射极击穿电压(I C =-1mA ，I B =0)BV CEO -40——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =-10uA ，I C =0)BV EBO -5——V Collector-Base Leakage Current集电极基极漏电流(V CB =-35V ，I E =0)I CBO ——-100nA Collector-Emitter Leakage Current集电极发射极漏电流(V CE =-35V ,V BE =0.5V)I CEX ——-100nA Emitter-Base Leakage Current发射极基极漏电流(V EB =-4V ，I C =0)I EBO ——-100nADC Current Gain(V CE =-10V ，I C =-150mA)直流电流增益(V CE =-10V ，I C =-0.1mA)(V CE =-10V ，I C =-500mA)H FE1003030—300Collector-Emitter Saturation Voltage 集电极发射极饱和压降(I C =-500mA,I B =-50mA )(I C =-150mA,I B =-15mA)V CE(sat)——-0.6-0.4VBase-Emitter Saturation V oltage基极发射极饱和压降(I C =-500mA,I B =-50mA)(I C =-150mA,I B =-15mA)V BE(sat)——-2.6-1.3V Transition Frequency特征频率(V CE =-20V ，I C =-20mA)f T200——MH Z Delay Time 延迟时间(V CC =-30V,V BE =0.5V,I C =-150mA,I B1=-15mA)t d ——10ns Rise Time 上升时间(V CC =-30V,V BE =0.5V,I C =-150mA,I B1=-15mA )t r ——25ns Storage Time 贮存时间(V CC =-30V,I C =-150mA,I B1=I B2=-15mA)t s ——225ns Fall Time 下降时间(V CC =-30V,I C =-150mA,I B1=I B2=-15mA)t f——60nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT4403■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT4403■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。

PZTA42贴片三极管 SOT-323三极管封装PZTA42规格参数

Symbol Para
meter
Value
Unit
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
0.2
A
ICM
VCE(sat) IC=20mA,IB=2mA
VBE(sat) IC=20mA,IB=2mA
fT
VCE=20V,IC=10mA,f=100MHz
Cob
VCB=20V,IE=0,f=1MHz
Min Typ Max Unit
300
V
300
V
6
V
0.1
μA
0.1
μA
25
40
40
0.5
V
0.9
V
50
MHz
3
8
40000
2. 7 寸包装流程图(Packing procedure)：
2 包装规格（Packing spec）：
封装载带/盖带
卷盘
包装箱
PKG
tape
Reel
Box
只/盘盘/盒
只/盒
pcs/reel reel/box pcs/box
7”盘 SOT-23 包
SOT-223 IC-ZD-04 (IC-JP-04) 装箱 *1 1000
pF
B,May,2012
【南京南山半导体有限公司 — 长电三极管选型资料】

贴片R系列三极管参数

Nec Rho Rho Tfk Nec HP SGS Nec Nec Nec Nec HP Phi Sie Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec
Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Nec Rho Sie Sie Rho Rho Rho Rho Mot Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Sie Nec Sie Sie Sie Sie Nec Rho Sie Sie Sie Sie Sie
RGs RHs RHs RHs RHs RHs RH RHs RIs RKs RKs RKM RK RR RR RVZ RW RZC RZC
BFS482 BFR183 BFR183W BFR183T BFP183 BFP183W 2SC3357 BFS483 BFP196 BFP194 BFR194 RK7002 2SC3357 BBY59-02V BFR93P MMST4126 BFR194 SST4124 MMST4124
N N N R WQ S R WQ N N N RQ N TQ WQ N N N N N N N WQ WQ WQ WQ WQ WQ N N N N N N N WQ WQ WQ WQ WQ WQ N N N N N N
SOT323 SOT23 SC59 SOT143 SOT143 SOT23R SOT143 SOT323 SOT323 SOT323 SOT145 SOT23 SOT143 SOT143 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23

贴片三极管封装

贴片三极管封装各位读友大家好，此文档由网络收集而来，欢迎您下载，谢谢贴片三极管代码查找贴片三极管资料及其封装贴片三极管代码查找贴片三极管资料及其封装JX SOT23BA V170B dual cc Si diode low IrJY SOT23BA V199 dioda-2xJY SOT23BA V199D dual series Si diode lowIrJZ SOT23BAW 156JZ SOT23BAW156A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap K SOD323BAT68-03W I BAT68 SchottkyK SOT232SK211 JFETK SOT323MRF917N npn RF fT 6GHzK0SOT23HSMP-3830 C gp pin diode HP3830K1SOT23BCW71 NPNK1SOT23BCW71N BC107AK1SOT23HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15DTA124G N pnp sw 50V 50mA w. b-e resK1p SOT23BCW71N BC107AK1t SOT23BCW71N BC107AK1X SOT23KSC3265 NPNK2SOT23BCW72 NPNK2SOT23BCW72NBC107B ZXT300K2SOT23HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23BCW72N BC107B ZXT300K2t SOT23BCW72N BC107B ZXT300K3SOT23BCW81 NPNK3SOT23BCW81N npn 50V hfe 420K3SOT23HSMP-3833 A dual HP3830 pin diode K31 BCW81R R npn 50V hfe 420 K31SOT23BCW81R NPNK3p SOT23BCW81N npn 50V hfe 420 K3t SOT23 BCW81N npn 50V hfe 420K4SOT23BCW71R NPNK4SOT23HSMP-3834 B dual HP3830 pin diodeK4SOT23R BCW71R R BC107AK5SOT23BCW72R NPNK5SOT23R BCW72R R BC107B ZTX300K6SOT23BCV71R NPNK6SOT23R BCV71R R BC546AK7SOT23BCV71 NPNK7SOT23BCV71N BC546AK71SOT23BCV71R NPNK7p SOT23BCV71N BC546AK7t SOT23BCV71N BC546AK8SOT23BCV72 NPNK8SOT23BCV72N BC546BK81SOT23BCV72R NPNK8p SOT23BCV72N BC546BK8t SOT23BCV72N BC546BK9SOT23BCF81 NPNK9SOT23BCV72R NPNK9SOT23R BCV72R R BC546BK91SOT23BCF81R NPNKA SOT232SK368 JFETMOSFETKB SOT23MMBT8099L N npn 80V gpKB SOT89BSS192 MOSFETKC BFQ29P N BFT66KC SOT232SK625 JFETKC SOT23BFQ29P NPNKM BST80T VN10KM SOT89BST80 FETKN BST84T Nch VMOS 200VKN SOT89BST84 FETKO BST86T nch VMOS 180VFETKX SOT23PMBF170 MOSFETL SCD80BBY53-02W I varicap pFL SOD323BAT62-03W I BAT62 schottky detectorL SOT232SC2712 NPNL0SOT23BAT721S C dual series 40V 200mA schottkyL0SOT23HSMP-3860 C dual series pin diodeL0SOT323HSMP-386B C gp RF pin diodeL1BSS65N pnp 12V 400MHz swL1SOT23BSS65 PNPL12SOT89ZVNL120Z MOSFETL2BSS69N pnp 40V 200MHz swL2SOT23BSS69 PNPL2SOT23HSMP-3862 D dual RF pin diodeL20SOT23BAS29 diodaL20SOT23BAS29C Si diode 120V 50mAL21SOT23BAS31 dioda-2xL21SOT23BAS31D dual BAS29 diodesL22SOT23BAS35 dioda-2xL22SOT23BAS35A dual BAS29 diodesL3BSS70N pnp 40V 200MHz swL3MMBC1623L3N npn 40V gpL3SOT23BSS70 PNPL3SOT23HSMP-3863 A ca gp RF pin diodeL3SOT23MMBC1623L3 NPNL30SOT143BA V23 dioda-2xL30SOT143BA V23S dual 200V 225mA diodesL31SOT23BA V23S dioda-2xL4MMBC1623L4N npn 40V gpL4SOT23BAT54 diodaL4SOT23HSMP-3864 B cc gp RF pin diodeL4SOT23MMBC1623L4 NPNL4SOT323BAT54W diodaL4SOT323BAT54W C BAT85 schottkyL41SOT143BAT74 dioda-2xL41SOT143BAT74S 2x BAT85L42SOT23BAT54A dioda-2xL42SOT323BAT54AW dioda-2xL42p SOT23BAT54A A dual c anode schottkyL43SOT23BAT54C dioda-2xL43SOT323BAT54CW dioda-2xL43p SOT23BAT54C B dual c cathode schottkyL44SOT23BAT54S dioda-2xL44SOT323BAT54SW dioda-2xL44p SOT23BAT54S D dual series schottkyL4p SOT23BAT54C BAT85 schottkyL4Z SOT23BAT54C BAT85 schottkyL5BSS65R R pnp 12V 400MHz swL5MMBC1623L5N MPS3904 hfe 135-270L5SOT23BAS55 diodaL5SOT23BSS65R PNPL5SOT23MMBC1623L5 NPNL51SOT143BAS56 dioda-2xL51SOT143BAS56S dual 60V 200mA diodesL52SOT23BAS678 diodaL6BAR17C pin diodeL6BSS69R N pnp 40V 200MHz swL6MMBC1623L6N MPS3904 hfe 200-400L6SOT23BAR17 diodaL6SOT23BSS69R PNPL6SOT23MMBC1623L6 NPNL7BAR14-1D dual pin 100mA maxL7BSS70R N pnp 40V 200MHz swL7MMBC1623L7N MPS3904 hfe 300-600L7SOT23BAR14-1 diodax2L7SOT23BSS70R PNPL7SOT23MMBC1623L7 NPNL8BAR15-1A dual pin 100mA maxL8SOT23BAR15-1 dioda-2xL8SOT23BAT721A A dual c anode 40V 200mA schottkyL9BAR16-1B dual pin 100mA maxL9SOT23BAR16-1 dioda-2xL9SOT23BAT721C B dual c cathode 40V 200mAschottkyLA SOT23BF550 PNPLAp SOT23BF550N pnp 40V 25mALB S525T G n-ch vhf mosfet 200MHzLB SOT143BF999 FETLBs SOT23BF999G n-ch vhf mosfet 300MHzLD SOT23BF543 FETLDs SOT23BF543G n-ch vhf mosfet 300MHzLE SOT23BF660 PNPLEs SOT23BF660N BF606A pnp vhf osc fT 800MHzLF SOT23BF777 NPNLG SOT23BF775A NPNLGs SOT23BF775A N npn RF fT for IFampLH BF569R R BF970 pnp RFLH SOT23BF569 PNPLHs SOT23BF569N BF970 pnp RFLJ SOT23BF579 PNPLK SOT23BF799 NPNLKs SOT23BF799N BF959LKs SOT323BF799W N BF959LM d >BST120T p-ch DMOSfet 60VLM SOT23BF569R PNPLM SOT89BST120 FETLN BST122T p-ch DMOSfet 50VLN SOT89BST122 FETLO SOT23BF775 NPNLOs SOT23BF775N BFQ69LOs SOT323BF775W N BFQ69LR SOT23BF517 NPNLRs SOT23BF517T BF763 GHzLS SOT23BF770A NPNLSs SOT23BF770A N npn low noise RF, Ft 6GHzM SCD80BAR64-02W I pin diodeM SOT143BAR65-07S dual pin diodeM SOT892SC2873 NPNM (blue)SOD323 BAR65-03W I pin diodeM (white)SOD323 BBY55-03W I varicap inM01SOT143BF901 FETM02SOT143BF901R FETM04SOT143BF904 FETM06SOT143BF904R FETM08SOT23PMBFJ308 F VHF n-ch JFET J308M09SOT23PMBFJ309 FETM09SOT23PMBFJ309 F VHF n-ch JFET J309M1SOT23BFR30 FETM1SOT23BFR30F BFW11 BF245M10SOT23PMBFJ310 FETM10SOT23PMBFJ310 F J310 n-ch jfetM10SOT23PMBFJ310 F VHF n-ch JFET J310FETM1B SOT23MMBT2222L N2N2222M1E SOT23MMBTA43L N MPSA43 200V Vce npn M1F SOT23MMBT5550L N 2N5550 npn 140VM1J SOT23MMBT2369L N2N2369AM2SOT23BFR31 FETM2SOT23BFR31F BFW12 BF245M20SOT143BFR200 FETM2B SOT23MMBT2907L N2N2907 pnp gpM2C SOT23MMBTA70L N gp pnp MPSA70M3MMBA812M3N 2N5086 hfe 60-120 pnpFETM3SOT23BFT46F n-ch fet gp low level ampM3SOT23MMBA812M3 PNPM31BSD20XQ n-ch depl sw mosfet 10VM31SOT89BSD20 FETM32BSD22XQ n-ch depl sw mosfet 20VM32SOT89BSD22 FETM3A SOT23MMBTH24L N npn VHF amp 400MHz fT 30V M3B SOT23MMBT918L N2N918 UHF ampM3J SOT23MMBTH69L N pnp VHF amp 2GHz fT 15VM4BSR56F 2N4856 n-ch fetFETM4SOT23MMBA812M4 PNPM4SOT363MBD110DW DL dual UHF schottky M4A SOT323MMBV109C Hyperabrupt varicap M4B SOT23 MMBV432B dual cc varicap 45pF/2VM4C SOT23MMBV3102 C Hyperabrupt varicap M4E SOT23MMBV105G C Hyperabrupt varicap M4F SOT23 MMBD353D dual MBD101 in series M4G SOT23MMBV2101 C varicap MV2101M5BSR57F 2N5457 n-ch fetM5MMBA812M5N 2N5086 hfe 135-270 pnpM5SOT23BSR57M5SOT23MMBA812M5 PNPM5SOT323MMBD352W Z2x MBD101 in series M5C SOT23MMBD7000D100V 2x series sw diodesM6BSS66N npn 40V sw fT 250MHz M6 MMBA812M6N2N5086 hfe 200-400 pnpM6SOT23BSR58 FETM6SOT23BSR58F 2N4858 n-ch fetM6SOT23BSS66 NPNM6SOT23MMBA812M6 PNPM65SOT23BF545A FETM66SOT23BF545BM67SOT23BF545C FETM6A SOT23MMBF4416 F2N4416 n-ch rf jfet M6B SOT23MMBF5484F 2N5484 n-ch rf jfet M6C SOT23 MMBFU310F U310 n-ch rf jfet M6E SOT23MMBF5460F 2N5460 n-ch rf jfet M6H SOT23 MMBD354A dual MBD101 cc M7BSS67N npn 40V sw fT 300MHz M7 MMBA812M7N2N5086 hfe 300-600 pnpM7SOT23BSS67 NPNM7SOT23MMBA812M7 PNPM74BSS83XQ n-ch enh sw mosfetM74SOT143BSS83MOSFETM8BSS66R R npn 40V sw fT 250MHzM8SOT23BSH103M n-ch 50V mosfetM8SOT23BSS66R NPNM84SOT23BF556A FETM85SOT143BF990AR FETM85SOT23BF556B FETM86SOT23BF556C FETM87SOT143BF990A FETM89BF989K BF960M89SOT143BF989 FETM8p SOT23BSN20Mn-ch 50V mosfet M9BSS67R R npn 40V sw fT 300MHzM9SOT23BSS67R NPNM90BF990W BF980M90SOT143BF990 FETM91BF991W BF981M91SOT143BF991 FETM92BF992W BF982M92SOT143BF992 FETM94BF994W BF964M94SOT143BF994 FETM96BF996W BF966M96SOT143BF996 FETM97BFR101AM97SOT143BFR101A FETM98BFR101BM98SOT143BFR101B FETMA SC59M1MA151A diodaMA SOT143BF989 FETMA SOT232SC3011 NPNMA SOT23FMMT-A06R NPNMA SOT346M1MA151AT E40V 100mA sw diodeMA SOT346M1MA152AT E80V 100mA sw diode MA SOT363MBT3904DW1DN dual 2N3904 MB BF995Wn-ch vhf dg mosfet BF961MB MBT3904DW9 dual 2N3904MB SOT143BF995 FETMB SOT232SC3098 NPN三极管封装及贴片型号三极管封装贴片三极管型号直插封装的型号贴片的型号90111T 90122T 9013 J3 9014 J6 9015 M6 9016 Y6 9018 J8 S8050 J3Y S8550 2TY 8050 Y1 8550 Y22SA1015BA 2SC1815HF 2SC945CR MMBT39041AM MMBT39062A MMBT22221P MMBT54012L MMBT5551G1 MMBTA421D MMBTA922DBC807-16 5A BC807-255B BC807-405C BC817-166A BC817-256B BC817-406C BC846A1A BC846B1B BC847A1E BC847B1F BC847C1G BC848A1JBC848B1K BC848C1L BC856A3A BC856B3B BC857A3E BC857B3F BC858A3J BC858B3KBC858C 3L 2SA733 CS UN2111 V1 UN2112 V2 UN2113 V3 UN2211 V4 UN2212 V5 UN2213 V6 2SC3356 R23 2SC3838 AD 2N7002 702贴片三极管封装资料和尺寸下面是一些贴片三级管的封装1B SOT23 IRLML2803 F n-chmosfet 30V1B SOT23 MMBT2222 NPN1B SOT23 MMBT2222 N 2N22221B SOT23 PMBT2222 NPN1B SOT23 SMBT2222 NPN1B SOT23 YTS2222 NPN1B SOT323 BC846BW NPN1B SOT416 BC846BT N BC546B1B SOT89 PXT2222 NPN-1B SOT323 PMST2222 N 2N22221B- SOT323 >BC846BW N BC546B1Bp SOT23 BC846B N BC546B1Bs SC74 BC817UPN N1Bt SOT23 BC846B N BC546B下图是贴片三极管封装SOT-23尺寸资料(贴片三极管s9014LT1)1Bt SOT323 BC846BW N BC546B1C SOT23 FMMT-A20 NPN1C SOT23 FMMT-A20 N MPSA201C SOT23 IRLML6302 F p-ch mosfet 20V1C SOT23 MMBTA20 NPN1C SOT23 MMBTA20L N MPS39041C SOT23 SMBTA20 NPN1Cp SOT23 BAP50-05 B dual cc GP RF pin diode1Cs SOT363 BC847S BC4571D SOT23 BC846 NPN1D SOT23 IRLML5103 F p-ch mosfet 30V1D SOT23 MMBTA42 NPN1D SOT23 MMBTA42 N MPSA42 300V npn1D SOT323 BC846W NPN1D SOT89 SXTA42 NPN1D- SOT323 BC846W N BC4561DN 2SC4083 N npn 11V TV tuners 1Dp SOT23 BC846 N BC4561DR SC59 MSD1328-RT1 NPN1A SOT323 BC846AW NPN1A SOT416 BC846AT N BC546A1A SOT89 PXT3904 NPN1A SOT89 SXT3904 NPN-1A SOT323 PMST3904 N 2N39041A- SOT323 BC846AW N BC546A1AM SOT23 MMBT3904L N 2N39041Ap SOT23 BC846A N BC546A1At SOT23 BC846A N BC546A1At SOT323 BC846AW N BC546A1B SOT23 BC846B NPN1B SOT23 BC846B N BC546B1B SOT23 FMMT2222 NPN1B SOT23 FMMT2222 N 2N22221DR SOT346 MSD1328R N npn gp 25V 500mA 1Ds SC74 BC846U N BC456 1Ds SOT363 BC846U BC4561Dt SOT23 BC846 N BC4561Dt SOT323 BC846W N BC4561E FMMT-A43 N MPSA431E SOT23 BC847A NPN1E SOT23 BC847A N BC547A1E SOT23 FMMT-A43 NPN1E SOT23 MMBTA43 NPN1E SOT23 MMBTA43 N MPSA43200V npn 1E SOT23 SMBTA43 NPN 1F SOT23 FMMT5550 NPN1F SOT23 MMBT5550 NPN1F SOT23 MMBT5550 N 2N5550 140V npn 1F SOT23 PMBT5550 NPN 1F SOT323 BC847BW NPN1F SOT416 BC847BT N BC547B1F- SOT323 BC847BW N BC547B1Fp SOT23 BC847B N BC547B1FR SOT23R BC847BR R BC547B1Fs SC75 BC847BT N BC547B1Fs SOT23 BC847B N BC547B1Fs SOT323 BC847BW N BC547B1G FMMT-A06 N MPSA061G SOT23 BC847C NPN1G SOT23 BC847C N BC547C1G SOT23 FMMT-A06 NPN1G SOT23 MMBTA06 NPN1G SOT23 MMBTA06 N MPSA061G SOT23 SMBTA06 NPN1G SOT323 BC847CW NPN1G SOT416 BC847CT N BC547C1G- SOT323 BC847CW N BC547C 1GM SOT23 MMBTA06 N MPSA06 1Gp SOT23 BC847C N BC547C1GR SOT23R BC847CR R BC547C 1Gs SOT23 BC847C N BC547C1Gs SOT323 BC847CW N BC547C 1GT SOA06 N MPSA061GT SOT23 SOA06 NPN1Gt SOT323 BC847CW N BC547C 1H FMMT-A05 N MPSA051H SOT23 BC847 NPN1H SOT23 FMMT-A05 NPN1H SOT23 MMBTA05 NPN1H SOT23 MMBTA05 N MPSA05 1H SOT23 SMBTA05 NPN1H SOT323 BC847W NPN1H- SOT323 BC847W N BC5471Hp SOT23 BC847 N BC5471Ht SOT23 BC847 N BC5471HT SOT23 SOA05 NPN1HT SOT23 SOA05 N MPSA051Ht SOT323 BC847W N BC5471J FMMT2369 N 2N23691J SOT23 BC848A N BC548A1J SOT23 MMBT2369 N MPS2369 1JA SOT23 MMBT2369A N MPS2369A1JR SOT23R BC848AR R BC548A1Js SOT143 BCV61A VQ npn current mirror hFe 180 1Js SOT23 BC848A N BC548A1Js SOT323 BC848AW N BC548A1K FMMT4400 N 2N44001K SOT143 BCV61B NPN1K SOT23 BC848B NPN1K SOT23 BC848B N BC548B1K SOT23 MMBT6428 N MPSA18 50V1K SOT23 PMBT6428 NPN1K SOT23 SMBT6428 NPN1K SOT323 BC848BW NPN1KM SOT23 MMBT6428L N MPSA18 50V1Kp SOT23 BC848B N BC548B1KR SOT23R BC848BR R BC548B1Ks SOT143B BCV61B VQ npn current mirror hFe 290 1Ks SOT23 BC848B N BC548B1Ks SOT323 BC848BW N BC548B1L FMMT4401 N 2N44011L MMBT6429 N MPSA18 45V1L SOT143 BCV61C NPN1L SOT143B BCV61C VQ npn current mirror hFe 520 1L SOT23 BC848C NPN1L SOT23 BC848C N BC548C1L SOT23 FMMT4401 NPN1L SOT23 FMMT5400 PNP1L SOT23 MMBT6429 NPN1L SOT23 PMBT6429 NPN1L SOT23 SMBT6429 NPN1L SOT323 BC848CW NPN1Lp SOT143B BCV61C VQ npn current mirror hFe 520 1Lp SOT23 BC848C N BC548C1LR SOT23R BC848CR R BC548C1Ls SOT23 BC848C N BC548C1Ls SOT323 BC848CW N BC548C1M SOT143 BCV61 NPN1M SOT23 BC848 NPN1M SOT23 FMMT-A13 NPN1M SOT23 FMMT-A13 N MPSA131M SOT23 MMBTA13 NPN1M SOT23 MMBTA13 N MPSA13 darlington 1M SOT23 PMBTA13 NPN 1M SOT23 SMBTA13 NPN1M SOT323 BC848W NPN1Mp SOT143B BCV61 VQ npn current mirror 1Mp SOT23 BC848 N BC5481N SOT23 FMMT-A14 NPN1N SOT23 FMMT-A14 N MPSA141N SOT23 MMBTA14 NPN1N SOT23 MMBTA14 N MPSA14 darlington 1N SOT23 PMBTA14 NPN1N10 SOT223 MMFT1N10ET1 MOSFET 1P BC847PN DI pnp/npn separate pair gpAF 1P FMMT2222A N2N2222A1P SOT23 FMMT2222A NPN1P SOT23 MMBT2222A NPN1P SOT23 MMBT2222A N 2N2222A 1P SOT23 PMBT2222A NPN1P SOT23 SMBT2222A NPN1P SOT23 YTS2222A NPN1P SOT89 PKT2222A NPN1Q SOT23 FMMT5088 NPN1Q SOT23 MMBT5088 NPN1Q SOT23 MMBT5088 N MPSA18 Vce 30V 1Q SOT23 PMBT5088 NPN 1E SOT323 BC847AW NPN1E SOT416 BC847AT N BC547A 1E SOT89 SXTA43 NPN1E- SOT323 BC847A N BC547A1EN 2SC4084 N npn 20V TV tuners 1Ep SOT23 BC847A N BC547A 1ER SOT23R BC847AR R BC547A 1Es SOT23 BC847A N BC4571Es SOT323 BC847AW N BC457 1Et SOT23 BC847A N BC547A1Et SOT323 BC847A N BC547A1F SOT23 BC847B NPN1F SOT23 BC847B N BC547B贴片三极管代码型号封装贴片三极管代码型号封装时间:2016-07-14 08:37来源:未知作者:电路网点击:次JX SOT23 BA V170 B dual cc Si diode low Ir JY SOT23 BA V199 dioda-2xJY SOT23 BA V199 D dual series Si diode lowIr JZ SOT23 BAW 156JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap K SOD323 BAT68-03W I BAT68 SchottkyK SOT23 2SK211 JFETK SOT323 MRF917 N npn RF fT 6GHzK0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107AK1 SOT23 HSMP-3831 K gp pindiode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107AK1t SOT23 BCW71 N BC107AK1X SOT23 KSC3265 NPNK2 SOT23 BCW72 NPNK2 SOT23 BCW72 N BC107B ZXT300K2 SOT23 HSMP-3832 D dual HP3830 pin diodeK24 DTC114G N npn sw 50V 100mA w. b-eresK25 DTA124G N pnp sw 50V 50mA w. b-e resK2p SOT23 BCW72 N BC107B ZXT300K2t SOT23 BCW72 N BC107B ZXT300K3 SOT23 BCW81 NPNK3 SOT23 BCW81 N npn 50V hfe 420K3 SOT23 HSMP-3833 A dual HP3830 pin diodeK31 BCW81R R npn 50V hfe 420K31 SOT23 BCW81R NPNK3p SOT23 BCW81 N npn 50V hfe 420 K3t SOT23 BCW81 N npn 50V hfe 420 K4 SOT23 BCW71R NPNK4 SOT23 HSMP-3834 B dual HP3830 pin diodeK4 SOT23R BCW71R R BC107AK5 SOT23 BCW72R NPNK5 SOT23R BCW72R R BC107B ZTX300K6 SOT23 BCV71R NPNK6 SOT23R BCV71R R BC546AK7 SOT23 BCV71 NPNK7 SOT23 BCV71 N BC546AK71 SOT23 BCV71R NPNK7p SOT23 BCV71 N BC546AK7t SOT23 BCV71 N BC546AK8 SOT23 BCV72 NPNK8 SOT23 BCV72 N BC546BK81 SOT23 BCV72R NPNK8p SOT23 BCV72 N BC546BK8t SOT23 BCV72 N BC546BK9 SOT23 BCF81 NPNK9 SOT23 BCV72R NPNK9 SOT23R BCV72R R BC546BK91 SOT23 BCF81R NPNKA SOT23 2SK368 JFETKA SOT87 BSS87 MOSFETKB SOT23 MMBT8099L N npn 80V gpKB SOT89 BSS192 MOSFETKC BFQ29P N BFT66KC SOT23 2SK625 JFETKC SOT23 BFQ29P NPNKM BST80 T VN10KM SOT89 BST80 FETKN BST84 T Nch VMOS 200VKN SOT89 BST84 FETKO BST86 T nch VMOS 180VKO SOT89 BST86 FETKX SOT23 PMBF170 MOSFETL SCD80 BBY53-02W I varicap pFL SOD323 BAT62-03W I BAT62 schottky detector L SOT23 2SC2712 NPN L0 SOT23 BAT721S C dual series 40V 200mA schottky L0 SOT23 HSMP-3860 C dual series pin diodeL0 SOT323 HSMP-386B C gp RF pin diodeL1 BSS65 N pnp 12V 400MHz swL1 SOT23 BSS65 PNPL12 SOT89 ZVNL120Z MOSFETL2 BSS69 N pnp 40V 200MHz swL2 SOT23 BSS69 PNPL2 SOT23 HSMP-3862 D dual RF pin diodeL20 SOT23 BAS29 diodaL20 SOT23 BAS29 C Si diode 120V 50mAL21 SOT23 BAS31 dioda-2xL21 SOT23 BAS31 D dual BAS29 diodesL22 SOT23 BAS35 dioda-2xL22 SOT23 BAS35 A dual BAS29 diodesL3 BSS70 N pnp 40V 200MHz swL3 MMBC1623L3 N npn 40V gpL3 SOT23 BSS70 PNPL3 SOT23 HSMP-3863 A ca gp RF pin diodeL3 SOT23 MMBC1623L3 NPNL30 SOT143 BA V23 dioda-2xL30 SOT143 BA V23 S dual 200V 225mA diodesL31 SOT23 BA V23S dioda-2xL4 MMBC1623L4 N npn 40V gpL4 SOT23 BAT54 diodaL4 SOT23 HSMP-3864 B cc gp RF pin diodeL4 SOT23 MMBC1623L4 NPNL4 SOT323 BAT54W diodaL4 SOT323 BAT54W C BAT85 schottkyL41 SOT143 BAT74 dioda-2xL41 SOT143 BAT74 S 2x BAT85L42 SOT23 BAT54A dioda-2xL42 SOT323 BAT54AW dioda-2xL42p SOT23 BAT54A A dual c anode schottkyL43 SOT23 BAT54C dioda-2xL43 SOT323 BAT54CW dioda-2xL43p SOT23 BAT54C B dual c cathode schottky L44 SOT23 BAT54S dioda-2xL44 SOT323 BAT54SW dioda-2xL44p SOT23 BAT54S D dual series schottkyL4p SOT23 BAT54 C BAT85 schottkyL4Z SOT23 BAT54 C BAT85 schottkyL5 BSS65R R pnp 12V 400MHz swL5 MMBC1623L5 N MPS3904 hfe 135-270L5 SOT23 BAS55 diodaL5 SOT23 BSS65R PNPL5 SOT23 MMBC1623L5 NPNL51 SOT143 BAS56 dioda-2xL51 SOT143 BAS56 S dual 60V 200mA diodesL52 SOT23 BAS678 diodaL6 BAR17 C pin diodeL6 BSS69R N pnp 40V 200MHz swL6 MMBC1623L6 N MPS3904 hfe 200-400L6 SOT23 BAR17 diodaL6 SOT23 BSS69R PNPL6 SOT23 MMBC1623L6 NPNL7 BAR14-1 D dual pin 100mA maxL7 BSS70R N pnp 40V 200MHz swL7 MMBC1623L7 N MPS3904 hfe 300-600L7 SOT23 BAR14-1 diodax2L7 SOT23 BSS70R PNPL7 SOT23 MMBC1623L7 NPNL8 BAR15-1 A dual pin 100mA maxL8 SOT23 BAR15-1 dioda-2xL8 SOT23 BAT721A A dual c anode 40V 200mA schottky L9 BAR16-1 B dual pin 100mA maxL9 SOT23 BAR16-1 dioda-2xL9 SOT23 BAT721C B dual c cathode 40V 200mAschottky JX SOT23 BA V170 B dual cc Si diode low IrJY SOT23 BA V199 dioda-2xJY SOT23 BA V199 D dual series Si diode lowIr JZ SOT23 BAW 156JZ SOT23 BAW156 A dual ca Si diode low IrK SCD80 BBY52-02W I UHF varicap K SOD323 BAT68-03W I BAT68 SchottkyK SOT23 2SK211 JFETK SOT323 MRF917 N npn RF fT 6GHzK0 SOT23 HSMP-3830 C gp pin diode HP3830K1 SOT23 BCW71 NPNK1 SOT23 BCW71 N BC107AK1 SOT23 HSMP-3831 K gp pin diode HP3830K14 DTA114G N pnp sw 50V 100mA w. b-eresK15 DTA124G N pnp sw 50V 50mA w. b-e resK1p SOT23 BCW71 N BC107AK1t SOT23 BCW71 N BC107AK1X SOT23 KSC3265 NPNK2 SOT23 BCW72 NPNK2 SOT23 BCW72 N BC107B ZXT300K2 SOT23 HSMP-3832 D dual HP3830 pin diodeK24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300K2t SOT23 BCW72 N BC107B ZXT300K3 SOT23 BCW81 NPNK3 SOT23 BCW81 N npn 50V hfe 420 K3 SOT23 HSMP-3833 A dual HP3830 pin diode K31 BCW81R R npn 50V hfe 420K31 SOT23 BCW81R NPNK3p SOT23 BCW81 N npn 50V hfe 420 K3t SOT23 BCW81 N npn 50V hfe 420 K4 SOT23 BCW71R NPNK4 SOT23 HSMP-3834 B dual HP3830 pin diode K4 SOT23R BCW71R R BC107AK5 SOT23 BCW72R NPNK5 SOT23R BCW72R R BC107B ZTX300K6 SOT23 BCV71R NPNK6 SOT23R BCV71R R BC546AK7 SOT23 BCV71 NPNK7 SOT23 BCV71 N BC546AK71 SOT23 BCV71R NPNK7p SOT23 BCV71 N BC546AK7t SOT23 BCV71 N BC546AK8 SOT23 BCV72 NPNK8 SOT23 BCV72 N BC546BK81 SOT23 BCV72R NPNK8p SOT23 BCV72 N BC546BK8t SOT23 BCV72 N BC546BK9 SOT23 BCF81 NPNK9 SOT23 BCV72R NPNK9 SOT23R BCV72R R BC546BK91 SOT23 BCF81R NPNKA SOT23 2SK368 JFETKA SOT87 BSS87 MOSFETKB SOT23 MMBT8099L N npn 80V gpKB SOT89 BSS192 MOSFETKC BFQ29P N BFT66KC SOT23 2SK625 JFETKC SOT23 BFQ29P NPNKM BST80 T VN10KM SOT89 BST80 FETKN BST84 T Nch VMOS 200VKN SOT89 BST84 FETKO BST86 T nch VMOS 180VKO SOT89 BST86 FETKX SOT23 PMBF170 MOSFETL SCD80 BBY53-02W I varicap pFL SOD323 BAT62-03W I BAT62 schottky detector L SOT23 2SC2712 NPN L0 SOT23 BAT721S C dual series 40V 200mA schottky L0 SOT23 HSMP-3860 C dual series pin diode L0 SOT323 HSMP-386B C gp RF pin diode L1 BSS65 N pnp 12V 400MHz swL1 SOT23 BSS65 PNPL12 SOT89 ZVNL120Z MOSFETL2 BSS69 N pnp 40V 200MHz swL2 SOT23 BSS69 PNPL2 SOT23 HSMP-3862 D dual RF pin diodeL20 SOT23 BAS29 diodaL20 SOT23 BAS29 C Si diode 120V 50mAL21 SOT23 BAS31 dioda-2xL21 SOT23 BAS31 D dual BAS29 diodesL22 SOT23 BAS35 dioda-2x。

PZTA06贴片三极管 SOT-323三极管封装PZTA06规格参数

FEATURES Low Voltage and High Current General Purpose Amplifier Applications
SOT-223
1. BASE 2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
【南京南山半导体有限公司 — 长电三极管选型资料】

Symbol
A A1 A2 b c D D1 E E1 e e1 L θ
Dimensions In Millimeters
Min
Max
1.520
1.800
0.000
0.100
1.500
1.700
0.660
0.820
0.250
0.014
0.244
0.252
0.114
0.122
0.130
0.146
0.269
0.278
0.091(BSC)
0.177
0.185
0.035
0.045
0°
10°
SOT223 包装（SOT223 PACKING）
编带包装（Tape&Reel Packing）：
1.包装流程图(Packing procedure)：
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
PZTA06 TRANSISTOR (NPN)
Parameter

PZTA92贴片三极管 SOT-323三极管封装PZTA92规格参数

-300
V
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-200V,IE=0
-250 nA
Emitter cut-off current
IEBO
VEB=-3V, IC=0
FEATURES High Voltage Driver Applications
SOT-223
1. BASE 2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
-100 nA
hFE(1) VCE=-10V, IC=-1mA
25
DC current gain
hFE(2) VCE=-10V, IC=-10mA
40
hFE(3) VCE=-10V, IC=-30mA
25
Collector-emitter saturation voltage
VCE(sat) IC=-20mA,IB=-2mA
V
—— I
CEsat
C
T =100℃ a
-100
T =25℃ a
-10 -0.1
-1
-10
COLLECTOR CURRENT I (mA) C
I —— V
-100
C
BE
COMMON EMITTER
V = -10V CE

MMBT3904SL贴片三极管 SOT-923三极管封装MMBT3904SL参数

京南山半导体有限公司 — 长电贴片三极管选型资料】

CLASSIFICATION OF hFE Rank Range O 100-200 Y 200-300
D,May,2013
【南京南山半导体有限公司 — 长电三极管选型资料】

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

The bottom gasket
Label on the Reel 8000×15 PCS 8000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208mm× 203mm
【南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-923 Plastic-Encapsulate Transistors
MMBT3904SL
FEATURES Complementary to MMBT3906SL MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1
TRANSISTOR (NPN)
SOT–923
3
1. BASE 2. EMITTER 3. COLLECTOR
2
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

(整理)贴片三极管R

3
BFR93AR
SGS
R
SOT23R
BFR91A
3
2SC4092
Nec
WQ
SOT143
npn RF fT 6GHz hfe 100-200
4
R5A
LM4040AIM3-5.0
SOT23
LM4040AIZ-5.0
3
R5B
LM4040BIM3-5.0
LM4040BIZ-5.0
3
R5C
LM4040CIM3-5.0
Rho
N
SC59
2N2907
3
LM4040BIM3-2.5
SOT23
LM4040BIZ-2.5
3
R2C
LM4040CIM3-2.5
LM4040CIZ-2.5
3
R2D
LM4040DIM3-2.5
LM4040DIZ-2.5
3
R2E
LM4040EIM3-2.5
LM4040EIZ-2.5
3
R2P
BFR93A
3
R08A
LM4120AIM5-2.5
SOT23-5
5
R08B
LM4120IM5-2.5
SOT23-5
5
R1
BFR93/A
SGS
N
SOT23
BFR91
3
R1
HSMS-8101
HP
K
SOT23
10-14GHz schottky mixer
3
R1
UMT4401
Rho
N
SC70
2N4401
3
R1
TN0210
LM4040AIM3-4.1

MMBT3904T贴片三极管 SOT-523三极管封装MMBT3904T参数

A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-523 Plastic-Encapsulate TransistorsMMBT3904T TRANSISTOR (NPN)FEATURES● Complementary to MMBT3906T ● Small Package MARKING:1NMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10µA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10µA, I C =0 6 V Collector cut-off current I CEX V CE =30V, V EB(off)=3V 50 nA Emitter cut-off currentI EBO V EB =5V, I C =0 100 nA h FE(1)V CE =1V, I C =0.1mA 40 h FE(2) V CE =1V, I C =1mA 70 h FE(3) V CE =1V, I C =10mA 100 300 DC current gainh FE(4)V CE =1V, I C =50mA 60I C =10mA, I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =5mA 0.3 V I C =10mA, I B =1mA 0.65 0.85 V Collector-emitter saturation voltage V BE(sat) I C =50mA, I B =5mA0.95 V Transition frequency f T V CE =20V,I C =10mA, f=100MHz 300 MHz Collector output capacitance C ob V CB =5V, I E =0, f=1MHz 4 pF Base input capacitance C ib V EB =0.5V, I C =0, f=1MHz 8 pF Delay time t d V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA35 ns Rise time t r V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA35 ns Storage time t s V CC =3V, I C =10mA, I B1= I B2=1mA 200 ns Fall timet fV CC =3V, I C =10mA, I B1= I B2=1mA50nsSymbol ParameterValue Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current200 mA P C Collector Power Dissipation150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55～+150℃3. COLLECTOR 【南京南山半导体有限公司 — 长电贴片三极管选型资料】The bottom gasketThe top gasket3000×1 PCS3000×15 PCSLabel on the ReelLabel on the Inner BoxLabel on the Outer BoxQA LabelSeal the box with the tapeSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 210 mm × 208 mm × 203 mmOuter Box: 440 mm × 440 mm × 230 mm。

FMMT449贴片三极管规格书

A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate TransistorsFMMT449 TRANSISTOR (NPN) FEATURESLow Equivalent On-ResistanceMARKING: 449MAXIMUM RATINGS (T a =25℃ unless otherwise noted)SymbolParameter Value Unit V CBOCollector-Base Voltage 50 V V CEOCollector-Emitter Voltage 30 V V EBOEmitter-Base Voltage 5 V I CCollector Current 1 A P CCollector Power Dissipation 200 mW R ΘJAThermal Resistance From Junction To Ambient 625 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltageV (BR)CBO I C =1mA, I E =0 50 V Collector-emitter breakdown voltageV (BR)CEO I C =10mA, I B =0 30 V Emitter-base breakdown voltageV (BR)EBO I E =100µA, I C =0 5 V Collector cut-off currentI CBO V CB =40V, I E =0 0.1 µA Emitter cut-off current I EBOV EB =4V, I C =0 0.1 µA h FE(1) *V CE =2V, I C =50mA 70 h FE(2) *V CE =2V, I C =500mA 100 300 h FE(3) *V CE =2V, I C =1A 80 DC current gain h FE(4) *V CE =2V, I C =2A 40 V CE(sat)1* I C =1A, I B =100mA0.5 V Collector-emitter saturation voltageV CE(sat)2* I C =2A, I B =200mA 1 V Base-emitter saturation voltageV BE(sat)* I C =1A, I B =100mA 1.25 V Base-emitter voltageV BE * V CE =2V, I C =1A 1 V Transition frequencyf T V CE =10V,I C =50mA, f=100MHz 150 MHz Collector output capacitanceC ob V CB =10V, I E =0, f=1MHz 15 pF *Pulse test 3. COLLECTOR 【南京南山半导体有限公司 — 长电贴片三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

MMST5551贴片三极管 SOT-323三极管封装MMST5551规格参数

A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-323 Plastic-Encapsulate TransistorsMMST5551 TRANSISTOR (NPN) FEATURES● Complementary to MMST5401● Small Surface Mount Package● Ideal for Medium Power Amplification and Switching MARKING:K4NMAXIMUM RATINGS (T a =25℃ unless otherwise noted) SymbolParameter Value Unit V CBOCollector-Base Voltage 180 V V CEOCollector-Emitter Voltage 160 V V EBOEmitter-Base Voltage 6 V I CCollector Current 600 mA P CCollector Power Dissipation 200 mW R ΘJAThermal Resistance From Junction To Ambient 625 ℃/W T jJunction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) ParameterSymbol Test conditions Min Typ MaxUnit Collector-base breakdown voltageV (BR)CBO I C =100µA, I E =0 180 V Collector-emitter breakdown voltageV (BR)CEO * I C =1mA, I B =0 160 V Emitter-base breakdown voltageV (BR)EBO I E =10µA, I C =0 6 V Collector cut-off currentI CBO V CB =120V, I E =0 50 nA Emitter cut-off currentI EBO V EB =4V, I C =0 50 nA V CE =5V, I C =1mA 80 V CE =5V, I C =10mA80 300 DC current gain h FE V CE =5V, I C =50mA30 I C =50mA, I B =5mA 0.2 V Collector-emitter saturation voltageV CE(sat) I C =10mA, I B =1mA 0.15 V I C =50mA, I B =5mA 1 V Base-emitter saturation voltageV BE(sat) I C =10mA, I B =1mA 1 V Transition frequencyf T V CE =10V,I C =10mA , f=100MHz 100 300 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 6 pF *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210mm ×208mm ×２０３m m Outer Box: 440mm ×440mm ×230mm。

贴片三极管型号查询

贴片三极管型号查询直插封装的型号贴片的型号9011 1T9012 2T9013 J39014 J69015 M6 9016 Y69018 J8S8050 J3YS8550 2TY 8050 Y18550 Y22SA1015 BA2SC1815 HF2SC945 CR MMBT3904 1AM MMBT3906 2A MMBT2222 1P MMBT5401 2L MMBT5551 G1 MMBTA42 1DBC807-16 5A BC807-25 5B BC807-40 5C BC817-16 6A BC817-25 6B BC817-40 6C BC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1J BC848B 1K BC848C 1L BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC858C 3LUN2111 V1 UN2112 V2 UN2113 V3 UN2211 V4 UN2212 V5 UN2213 V6 2SC3356 R23 2SC3838 AD 2N7002 702B3的是肖特基二极管# re:常用贴片三极管查询 2007-6-26 14:23:38 廖文明楼主知道印有P？？后面两个看不清字的是什么管子吗，用表量好象只有BE极有电阻，其它极量表都不动。

还有一个就是BE在电路板焊点是连起来的，字也看不清，用在小日本汽油机点火器电路上的，哎，搞了几天都没摸出名堂来。

# re:常用贴片三极管查询 2007-6-26 14:28:14 廖文明就这么一个样品，哪位知道的请回下，我就是搞不明白贴片有三个脚后面两个脚为什么要连一起，早知道这么难，当初应小心解剖才是，痛哭回复廖文明：我觉得根据你的意思，应该不会是三极管而应该是两个二极管这是根据你的情况筛选了之后的你看看，那些对你有用，我觉得PA的这个有可能，因为他是一个一个二极管的sot23封装，有一个引脚是空的！不过具体情况还要具体分析，这就看你的电路用万用表测量了！。

MMBT3904M贴片三极管 SOT-723三极管封装MMBT3904M参数

B ,Jun ,2013SOT-7231. BASE2. EMITTER3.COLLECTORJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-723 Plastic-Encapsulate Transistors MMBT3904M TRANSISTOR (NPN)FEATURE● Complementary to MMBT3906M ● Small Package MARKING: 1NMAXIMUM RATINGS (T a =25℃ unless otherwise noted )Symbol ParameterValue Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.2 A P C Power Dissipation0.1 W R ΘJA Thermal Resistance from Junction to Ambient 1250 ℃/W T JJunction Temperature150 ℃ T stg S torage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin TypMaxUnitCollector-base breakdown voltage V (BR)CBOI C =10µA,I E =060V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10µA,I C =0 6V Collector cut-off current I CEX V CE =30V,V EB(off)=3V 50 nA Emitter cut-off currentI EBO V EB =5V,I C =0100 nA h FE(1) V CE =1V,I C =0.1mA 40 h FE(2) V CE =1V,I C =1mA 70 h FE(3) V CE =1V,I C =10mA 100 300 h FE(4) V CE =1V,I C =50mA 60 DC current gainV CE(sat)1 I C =10mA,I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat)2 I C =50mA,I B =5mA 0.3 V V BE(sat)1 I C =10mA,I B =1mA 0.650.85 V Base-emitter saturation voltage V BE(sat)2 I C =50mA,I B =5mA0.95 V Transition frequency f T V CE =20V,I C =10mA,f=100MHz 300 MHz Output capacitance C ob V CB =5V,I E =0,f=1MHz4 pF Input capacitance C ib V EB =0.5V,I C =0,f =1MHz8 pF Noise figure NF V CE =5V,I C =0.1mA,f=1MHz,R S =1k Ω 5 dB Delay time t d 35 ns Rise time t r V CC =3V,V BE(off )=-0.5V,I C =10mA,I B1=1mA35 ns Storage time t s 200 ns Fall timet f V CC =3V,I C =10mAI B1=I B2=1mA50 ns 【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电贴片三极管选型资料】The bottom gasketThe top gasket8000×1 PCS8000×15 PCSLabel on the ReelLabel on the Inner BoxLabel on the Outer BoxQA LabelSeal the box with the tapeSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 210 mm × 208mm × 203mmOuter Box: 440 mm × 440mm × 230mm。