BC856W贴片三极管 SOT-323三极管封装BC856W规格参数

COMMON
EMITTER T =25℃
a
-8uA
-6uA
-4uA
I =-2uA
B
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE V (V) CE
V —— I
BEsat
C
β=20
T =25℃ a
T =100℃ a
-1
-10
COLLECTOR CURRENT I (mA) C
A,May,2011
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage
Collector cut-off current
DC current gain
BC856AW, 857AW,858AW BC856BW, 857BW,858BW
BC857CW,BC858CW
Collector-emitter saturation voltage
ICBO hFE VCE(sat)
VCB= -30 V , IE=0 VCE= -5V, IC= -2mA IC=-100mA, IB= -5mA
DC CURRENT GAIN h FE
VOLTAGE V
(V)
CEsat
500 400 300 200 100
0 -1
-1000
h —— I
FE
C
T =100℃ a T =25℃ a
V =-5V CE
-10
-100
COLLECTOR CURRENT I (mA) C
V —— I
CEsat
C
-100
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP.
1.200
1.400
0.525 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP.
0.047
0.055
0.021 REF.
0.010
0.018
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB= -5mA
Transition frequency
fT
VCE= -5V, IC= -10mA
f=100MHz
Min
Max Unit
-80
-50
V
-30
-65
-45
V
-30
-5
V
-15
nA
125
A,May,2011
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
Label on the Outer Box Outer Box: 440mm×440mm×230mm
VOLTAGE V
BASE-EMITTER SATURATION
-6 -5 -4 -3 -2 -1 -0
-0
-1000 -800 -600 -400 -200 -0 -0.1
15 12
9 6 3 0 -0.1
Static Characteristic
-20uA -18uA -16uA -14uA -12uA -10uA
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210mm×208mm×２０３mm
C / C —— V / V
ob
ib
CB
EB
C ib
-100
f=1MHz
I =0/I =0
E
C
T =25℃ a
C ob
-1
-10
REVERSE BIAS VOLTAGE V (V)
COLLECTOR POWER DISSIPATION P (mW)
C
COLLECTOR-EMITTER SATURATION
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-323 Plastic-Encapsulate Transistors
BC856AW, BW TRANSISTOR (PNP) BC857AW, BW,CW BC858AW, BW,CW
250
220
475
420
800
-0.65
V
-1.1
V
100
MHz
Collector capacitance
Cob
VCB=-10V, f=1MHz
4.5
pF
A,May,2011
Typical Characteristics
BC856W
COLLECTOR CURRENT I (mA) C
(mV)
BEsat
SOT-323
FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Value
-80 -50 -30
-65 -45 -30 -5 -0.1 150 150 -65-150
Unit
V
V
V A mW ℃ ℃
DEVICE MARKING
BC856AW=3A; BC856BW=3B; BC857AW=3E; BC857BW=3F;BC857CW=3G; BC858AW=3J; BC858BW=3K; BC858CW=3L
Emitter-base breakdown voltage
BC856W BC857W BC858W BC856W BC857W BC858W
Symbol Test conditions VCBO IC= -10μA, IE=0 VCEO IC= -10mA, IB=0 VEBO IE= -1μA, IC=0
T =100℃
a
T =25℃ a
-10 -0.1
180 150 120
90 60 30
0 0
-1
-10
COLLECTOR CURRENT I (mA) C
P —— T
C
a
β=20
-100
25
50Hale Waihona Puke Baidu
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
CAPACITANCE C (pF)
Symbol
VCBO
VCEO
VEBO IC PC* TJ Tstg
Parameter Collector-Base Voltage
BC856W BC857W BC858W Collector-Emitter Voltage
BC856W BC857W BC858W Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature