光电信号检测第三章(二)

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R2
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1
2
3
3.3.3 Photo-Multiplier tube PMT
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1
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IF
IF3 IF
IF
IF2
IF
IF1
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4 3 2 10 /
mW
IF
12
0
10 0
80
50 100 150 /mA
P-I
60 0 10 20 30 40 50
40 60 70
IF/m A
20 IF
2 f m
1.0
0.707
0
RL1>RL2>RL3
f m1
f m2 f m3 f /M Hz
1 2 3 4
5 6
3.6 PSD
1PSD
II10II201LL2I2LxAI0I1I1I20 xAA I2 xPA
25
200
0
10 20 30 40 50 60 70 T /�C
100 0
10 20 30 40 50 60 70 80 T/�C
5kHz
100 80 60 40 /% 20
0
RL=1k RL=10k RL=100k
100 500 1000 5000 10000 / Hz
J
A
PN
PN PN NPPN P PNN
PN
N-AIyGa1-yAs P- GaAs
P-AIxGa1-xAs
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来自百度文库
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SiO2
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P n
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100
1000
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25
70
50 100 150 /mA
LED
RL
Ucc
RL
Ucc
UF
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RL
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IF
UF
GaAs20mAGaP10mA
i / mA
120
GaAs1.0VGaAsP 100 80
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LD
PN
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LED
3
LED 4
LED HBLED
3.4.2
1
Al2O3
He-NeCO2 GaAs
2
104 W 1017W /cm2
1. . .
---- ---- ----
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He -Ne HeNe HeNe51 101 Ne,:
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1.0 T 30 0 K
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0.6
0.4
0.2
0 80
60 40 20 0 20 40 60 80 ( )
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2.5
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0.5
0
0
50
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2
10-3-10-5D
()
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IF IC
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GaP1.8V
40
20
GaP2.0V
0
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1.0
1.5
2.0
2.5
u /V
LED
Rb1
LED
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Rb2
Re
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1 LED
2 LED GaP:ZnO GaAaPLEDGaAaP LEDGaNLED
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4LED
5
1
2
LED LED 0.2-0.3nm/
1.0
0.8
0.6
0.4
0.2
0
GaP p=565nm
GaAsP
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GaAsP p=655nm
600 700 800 900
1000 /nm
LED
10
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photomultiplier tube, PMT
Grill
1106~107
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2.
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3.4.1 (Light emitting diode)
3.3.2
NPN 3DU
Ip IcIe1 Ip,
Vo
c
Ip
Ic
b Ib
e
Ic I p I p 1 I p
VCC
VCC
PN
/%
100
80
60
40
20 0
4000
8000
900nm
1500nm
,
12000 16000 /nm
ebPN
I/mA
6
4
2
0
20
2500lx
2000lx 1500lx 1000lx 500lx
40
60
U/V
80
I ( klx)
I/A
3.0
2.0
1.0
0
200 400 600 800 1000 L/lx
/mA
/mA
50
400
300
I2
I0
150
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( a)
AlGaAs/GaAs
10 9
8 7
6 5 4 3
2 1 0
0 20 40 60 80 ��������I / mA
(b)
1
He-Ne
632.8nm
10-9nm
(Kr86) 4.7�10-3nm 106107 .
CO210.6 m CO 5.4 m YAG1.06 m 0.24 m