SS8050三极管规格书：三极管SS8050参数与封装尺寸

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
300
COLLECTOR CURRENT IC (mA)
1000 1500
C /C ob ib
——
V /V CB EB
Cib
f=1MHz IE=0/IC=0 Ta=25℃
Cob
3
1 0.1
350 300 250 200 150 100
50 0 0
0.3
1
3
REVERSE VOLTAGE V (V)
P —— T
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
140 120 100
80 60 40 20
0 0.0
1000
300 100
30 10
3 1
1
1500 1000
300 100
30 10
3 1 0.2
1000
300 100
30 10
3 1
1
Static Characteristic
VCE=10V Ta=25℃
100
COLLECTOR POWER DISSIPATION PC (mW)
CAPACITANCE C (pF)
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
DC CURRENT GAIN hFE
h —— I
1000
FE
C
COMMON EMITTER
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8050 TRANSISTOR (NPN)
1.800
2.000
0.550 REF.
0.300
0.500
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
Value
Unit
40
V
25
V
5
V
1.5
A
0.3
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
ICBO
VCB=40V, IE=0
Collector cut-off current
ICEO
VCB=20V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC= 100mA
120
hFE(2)
VCE=1V, IC= 800mA
VCE=1V
T =100℃ a
300
Ta=25℃
100
30
10 1
1.2 1.0 0.8 0.6 0.4 0.2
1
200 100
30 10
3
10
30
100
300
COLLECTOR CURRENT IC (mA)
V
—— I
BEsat
C
1000 1500
Ta=25℃
Ta=100℃
β=10
3
10
30
100
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB= 80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB= 80mA
Transition frequency
VCE=10V, IC= 50mA
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
C
a
10
20
25
50
75
100
125
AMBIENT TEMPERATURE Ta (℃)
150
B,Jan,2012
COLLCETOR CURRENT IC (mA)
TRANSITION FREQUENCY fT (MHz)
【 南京南山半导体有限公司 — 长电三极管选型资料】

500uA 450uA 400uA
COMMON EMITTER Ta=25℃
350uA
300uA
250uA
200uA 150uA
100uA IB=50uA
0.5
1.0
1.5
2.0
2.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
——
CEsat
I
C
Ta=100℃ Ta=25℃
3
SOT-23
FEATURES Complimentary to SS8550
1. BASE 2. EMITTER 3. COLLECTOR
MARKING: Y1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
10
30
100
300
COLLECTOR CURRENT IC (mA)
V —— I
BE
C
β=10
1000 1500
Ta=100℃
Ta=25℃
COMMON EMITTER VCE=1V
0.4
0.6
0.8
1.0
1.2
BASE-EMMITER VOLTAGE VBE (V)
f T
——
I
C
3
10
30
COLLECTOR CURRENT IC (mA)
fT
ቤተ መጻሕፍቲ ባይዱ100
f=30MHz
CLASSIFICATION OF hFE(1)
Rank
L
H
Range
120-200
200-350
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.5
V
1.2
V
MHz
J 300-400
B,Jan,2012
Typical Characterisitics
SS8050
COLLECTOR CURRENT IC (mA)
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
0.071
0.079
0.022 REF.
0.012
0.020
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box