2SA935三极管封装TO-92L

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2SA1318三极管参数 TO-92直插三极管2SA1318规格书

A,Dec,20102. COLLECTORJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92 Plastic-Encapsulate Transistors2SA1318 TRANSISTOR (PNP)FEATURESz Large Current Capacity and Wide ASOAPPLICATIONSz Capable of Being Used in The Low Frequency to HighFrequency RangeMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.01mA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEOI C =-1mA,I B =0 -50V Emitter-base breakdown voltage V (BR)EBOI E =-0.01mA,I C =0 -6VCollector cut-off current I CBO V CB =-40V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-5V,I C =0 -0.1 μA h FE(1) V CE =-6V, I C =-1mA 100 560DC current gainh FE(2) V CE =-6V, I C =-0.1mA 70 Collector-emitter saturation voltage V CE(sat)I C =-100mA,I B =-10mA -0.3 V Base-emitter saturation voltage V BE (sat)I C =-100mA,I B =-10mA -1.0 V Collector output capacitance C ob V CB =-6V, f=1MHz 4.5pF Transition frequencyf TV CE =-6V,I C =-10mA200MHzCLASSIFICATION OF h FE(1)RANK R STURANGE 100-200 140-280 200-400 280-560Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -6 V I C Collector Current-0.2 A P C Collector Power Dissipation500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

2SB892三极管(TO-92L)

Unit : mm
【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
Sponge strip

2000 pcs
The top gasket
Label on the Inner Box
Inner Box: 333 mm×203mm×42mm
Stamp “EMPTY” on the empty box
FEATURE z Power Supplies, Relay Drivers, Lamp Drivers, and Automotive Wiring z Low Saturation Voltage. z Large Current Capacity and Wide ASO.
TO-92L
1. EMITTER 2. COLLECTOR 3. BASE
2.440
2.640
13.800
14.200
1.600
0.000
0.300
Dimensions In Inches
Min.
Max.
0.146
0.161
0.050
0.062
0.014
0.022
0.024
0.031
0.014
0.018
0.185
0.201
0.157
0.307
0.323
0.050 TYP.
-150
COMMON EMITTER Ta=25℃-Fra bibliotek00-50
-0.50mA -0.45mA -0.40mA -0.35mA -0.30mA -0.25mA -0.20mA
-0.15mA -0.10mA
-0 -0.0

2SA1013三极管(TO-92MOD)

Dimensions In Millimeters Min. Max. 4.700 5.100 1.730 2.030 0.400 0.600 0.900 1.100 0.400 0.500 5.800 6.200 4.000 8.400 8.800 1.500 TYP. 2.900 3.100 13.800 14.200 1.600 0.000 0.380
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SA1013
TRANSISTOR (PNP) TO-92MOD
IC=- 100μA , IE=0 IC= -1mA , IB=0 IE= -10μA, IC=0 VCB=-150 V , IE=0 VEB=-6V, IC=0 VCE=-5 V, IC=- 200mA IC= -500m A, IB= -50mA IC= -5mA, VCE=- 5V VCE= -5 V, IC= -200mA VCB=-10V, IE=0,f=1MHz
Dimensions In Inches Min. Max. 0.185 0.201 0.068 0.080 0.016 0.024 0.035 0.043 0.016 0.020 0.228 0.244 0.157 0.331 0.346 0.059 TYP. 0.114 0.122 0.543 0.559 0.063 0.000 0.015
Symbol A1 A T d d1 P P0 P2 F1,F2 △h W W0 W1 W2 H H0 L1 D0 t1 t2 P1 △P

S9014三极管参数 TO-92三极管S9014规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsS9014 TRANSISTOR(NPN)FEATURES z High Total Power Dissipation.(P C =0.45W)z High h FE and Good Linearity z Complementary to S9015MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM in T yp Max UnitCollector-base breakdown voltage V (BR)CBOI C =100μA, I E =0 50 VCollector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 45 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5 V Collector cut-off current I CBO V CB =50V, I E =0 0.1 μA Collector cut-off current I CEO V CE =35V, I B =0 0.1 μA Emitter cut-off current I EBO V EB = 5V, I C =0 0.1 μA DC current gainh FEV CE =5V, I C = 1mA60 1000 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B = 5mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B = 5mA1VTransition frequencyf TV CE =5V, I C = 10mA f=30MHz150 MHzCLASSIFICATION OF h FE(1) Rank A B C D Range60-150 100-300 200-600 400-1000TO-921. EMITTER2. BASE3. COLLECTORA,Apr,2011【南京南山半导体有限公司 — 长电三极管选型资料】10010000200400600800100012002550751001251101101001000875432610C O L L E C T O R C U R R E N T I C (m A )Static Characteristic5000B A S E -E M M I T E R V O L T A G E V B E (m V )B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )AMBIENT TEMPERATURE Ta ()℃S9014Typical CharacterisiticsT R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)60I Ch FE —— A,Apr,2011 【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

2SA673A三极管参数 TO-92三极管2SA673A规格书

A,Dec,20102. COLLECTORJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92 Plastic-Encapsulate Transistors2SA673A TRANSISTOR (PNP)FEATURESz Low Frequency Amplifierz Complementary Pair with 2SC1213AMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-0.01mA,I E =0 -50 V Collector-emitter breakdown voltage V (BR)CEOI C =-1mA,I B =0 -50V Emitter-base breakdown voltage V (BR)EBOI E =-0.01mA,I C =0 -4VCollector cut-off current I CBO V CB =-20V,I E =0 -0.5 μA Emitter cut-off current I EBO V EB =-3V,I C =0 -0.5 μA h FE(1) V CE =-3V, I C =-10mA 60 320 DC current gainh FE(2)*VCE =-3V, I C =-500mA 10Collector-emitter saturation voltage V CE(sat) *I C =-150mA,I B =-15mA -0.6 VBase-emitter voltageV BEV CE =-3V, I C =-10mA-0.75V*Pulse test: pulse width ≤300μs, duty cycle ≤ 2.0%.CLASSIFICATION OF h FE(1)RANK B CDRANGE 60-120 100-200 160-320Symbol Parameter Value Unit V CBO Collector-Base Voltage -50 V V CEO Collector-Emitter Voltage -50 V V EBO Emitter-Base Voltage -4 V I C Collector Current-0.5 A P C Collector Power Dissipation400 mW R θJA Thermal Resistance From Junction To Ambient 312 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

2SA系列(PNP型)三极管全参数表

25
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011S
SANYO
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011W
WS
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
200m
-500m
-40
-32
200M
82-390
2SA1037AK
ROHM
硅PNP三极管,一般小信号放大，配对管2SC2412K
200m
-150m
-60
-50
140M
120-560
2SA1037B
LRC
硅PNP三极管,一般小信号放大，配对管2SC2412K/2SC4081
200m
-150m
-60
-50
-25
200M
50-340
CK77A
2SA0684
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1384
1
-1.5
-60
-50
200M
50-340
CK77A
2SA0794
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1567
1.2
-500m
-100
-100
120M
60M
70-240
3CA10D
2SA1013
长电
硅PNP三极管,TO-92，放大

2SA720三极管参数 TO-92三极管2SA720规格书

-10
-100
-500
COLLECTOR CURRENT IC (mA)
V BEsat
—— I C
-100
-10 -0.3
-500 -100
Ta=100℃
Ta=25℃
-1
-10
-100
COLLECTOR CURRENT IC (mA)
I
C
—— V BE
β=10
-500
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
—— I
CEsat
C
DC CURRENT GAIN hFE
1000
100
10 -5
-2

2SA719/2SA720
h —— I
FE
C
Ta=100℃ Ta=25℃
COMMON EMITTER VCE= -10V
Sponge strip
Sponge strip

2000 pcs
The top gasket
Label on the Inner Box
Inner Box: 333 mm×162mm×43mm Plastic bag
Stamp “EMPTY” on the empty box
Label on the Inner Box
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Outer Box: 525 mm× 360mm× 262mm
Label on the Outer Box

2SA684三极管封装TO-92L

VBE(sat) IC=-500mA, IB=-50mA
Transition frequency
fT
VCE=-10V, IE=50mA, f=200MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
Typ
-0.2 -0.85 200
20
Unit V V V A W ℃ ℃
Seal the box with the tape
QA Label
Outer Box: 493 mm× 400mm× 264mm The top gasket
Label on the Outer Box
【南京南山半导体有限公司 — 长电三极管选型资料】

Inner Box: 240 mm×165mm×９５mm
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SA684 TRANSISTOR (PNP)
ICBO
VCB=-20V, IE=0
DC current IC=-500mA
85
hFE(2) VCE=-5V, IC=-1A
50
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter saturation voltage
a
100
-1000
TRANSITION FREQUENCY f (MHz) T

三极管封装的种类共11页

三极管封装：TO-92、TO-92S、TO-92NL、TO-126、TO-251、TO-251A、TO-252、TO-263（3线）、TO-220、T0-3、SOT-23、SOT-143、SOT-143R、SOT-25、SOT-26、TO-50。

电源芯片封装：SOT-23、T0-220、TO-263、SOT-223。

以TO-92,T0-3,TO-220,TO-263,SOT-23最常用[attachment=297]（这是TO-220封装）1、BGA(ball grid array)球形触点陈列，表面贴装型封装之一。

在印刷基板的背面按陈列方式制作出球形凸点用以代替引脚，在印刷基板的正面装配LSI 芯片，然后用模压树脂或灌封方法进行密封。

也称为凸点陈列载体(PAC)。

引脚可超过200，是多引脚LSI 用的一种封装。

封装本体也可做得比QFP(四侧引脚扁平封装)小。

例如，引脚中心距为1.5mm 的360 引脚BGA 仅为31mm 见方；而引脚中心距为0.5mm 的304 引脚QFP 为40mm 见方。

而且BGA 不用担心QFP 那样的引脚变形问题。

该封装是美国Motorola 公司开发的，首先在便携式电话等设备中被采用，今后在美国有可能在个人计算机中普及。

最初，BGA 的引脚(凸点)中心距为1.5mm，引脚数为225。

现在也有一些LSI 厂家正在开发500 引脚的BGA。

BGA 的问题是回流焊后的外观检查。

现在尚不清楚是否有效的外观检查方法。

有的认为，由于焊接的中心距较大，连接可以看作是稳定的，只能通过功能检查来处理。

美国Motorola 公司把用模压树脂密封的封装称为OMPAC，而把灌封方法密封的封装称为GPAC(见OMPAC 和GPAC)。

2、BQFP(quad flat package with bumper)带缓冲垫的四侧引脚扁平封装。

QFP 封装之一，在封装本体的四个角设置突起(缓冲垫)以防止在运送过程中引脚发生弯曲变形。

2sa92三极管参数

2sa92三极管参数
哎，今儿咱们来摆摆龙门阵，聊点新鲜嘞，就说说这个2sa92三极管参数吧。

咱们先从四川话开讲。

四川的兄弟伙些，你们听好啦，这个2sa92三极管啊，那可是个好东西。

参数嘛，咱得说详细点。

首先呢，它的最大集电极电流，那就像咱们四川的火锅一样，辣得够劲儿，大得很！然后嘞，它的最大反向电压，就像咱们四川的麻辣香锅，耐得住高温，扛得住压力。

好，咱们再转到贵州话。

贵州的哥们儿，你们听我说哈，这个三极管的最大功耗，那就像你们贵州的茅台酒一样，醇香可口，耐用得很。

还有它的频率特性，就像你们贵州的山水一样，清澈见底，响应快得很。

接下来咱们说说陕西方言。

陕西的老乡们，你们听好了，这个2sa92三极管的稳定性，那就像咱们陕西的兵马俑一样，历经千年，依旧屹立不倒。

而它的温度特性呢，就像咱们陕西的羊肉泡馍，无论寒暑，都能保持那份独特的美味。

最后咱们来点儿北京味儿。

北京的兄弟姐妹们，您们看这儿，这个三极管的体积小巧，就像咱们北京的四合院一样，虽然地方不大，但五脏俱全。

它的封装形式呢，就像咱们北京的烤鸭一样，精美又实用。

哎呀，说了这么多，想必大家对这个2sa92三极管的参数也有了个大概的了解了吧。

咱这可是用科学的方式，结合各地的方言，给大家讲解的，既有趣又实用。

大家要是觉得好的话，就给个赞，咱们下次再聊！。

2SC2060三极管(TO-92L)

A,Jun,2011
【南京南山半导体有限公司 — 长电三极管选型资料】

Symbol A A1 b b1 c D D1 E e e1 L Φ h
Dimensions In Millimeters Min. Max. 3.700 4.100 1.280 1.580 0.350 0.550 0.600 0.800 0.350 0.450 4.700 5.100 4.000 7.800 8.200 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Outer Box: 525 mm× 360mm× 262mm
Label on the Outer Box
FEATURE Power Dissipation PCM: 0.75 W (Ta=25℃)
2. COLLECTOR 3. BASE
Low Saturation Voltage (VCE(sat)=0.15V at 500mA) Complementary Pair with 2SA934
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
【南京南山半导体有限公司 — 长电三极管选型资料】

Sponge strip
Sponge strip
2000 pcs
The top ga Box: 333 mm×203mm×42mm Stamp “EMPTY” on the empty box Seal the box with the tape QA Label

2SB764三极管(TO-92L)

1. EMITTER 2. COLLECTOR 3. BASE
FEATURES General Purpose Switching Application
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -1 750 167 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃
IC=-10µA,IE=0 IC=-1mA,IB=0 IE=-10µA,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA VCB=-10V,IE=0, f=1MHz VCE=-10V,IC=-50mA
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L

2SB927三极管(TO-92MOD)

Unit V V V A W ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE (sat) Cob fT Test conditions Min -30 -25 -6 -0.1 -0.1 100 65 -0.6 -1.2 32 150 V V pF MHz 560 Typ Max Unit V V V μA μA
【南京南山半导体有限公司 — 长电三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SB927
TRANSISTOR (PNP)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -25 -6 -2.5 1 125 150 -55~+150

2SC2655三极管(TO-92L)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors2SC2655 TRANSISTOR (NPN)FEATURESz Low S aturation V oltage: V CE(sat)=0.5V(Max)(I C =1A) z High S peed S witching T ime: t stg =1μs(Typ.) zComplementary to 2SA1020aELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM in T yp MaxU nitCollector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 50 VCollector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 50 VEmitter-base breakdown voltage V (BR)EBO I E =100μA,I C =0 5 VCollector cut-off current I CBO V CB =50V,I E =0 1 μAEmitter cut-off current I EBO V EB =5V,I C =0 1 μAh FE(1) V CE =2V,I C =500mA 70 240 DC current gainh FE(2) V CE =2V,I C = 1.5A40Collector-emitter saturation voltage V CE(sat) I C =1A,I B =0.05A 0.5 VBase-emitter saturation voltage V BE(sat) I C =1A,I B =0.05A 1.2 VTransition frequency f T V CE =2V,I C =0.5A 100 MHz Collector output capacitanceC obV CB =10V,I E =0,f =1MHz30 pFTune on Timet on 0.15 Storage Time t stg2 Switch timeFall Timet fV CC =30V,Ic=1A,I B1=-I B2=0.05A0.15 μsCLASSIFICATION OF h FE (1)Rank O YRange70-140 120-240TO-92L1.EMITTER2.COLLECTOR3.BASEB,Nov,2012【南京南山半导体有限公司 — 长电三极管选型资料】0.010.11255075100125150020040060080010000.00.10.20.30.40.00.20.40.60.81.01.2I C2SC2655Typical Characterisitics2C O L L E C T O R C U R R E N T I C (A )C O L L E C T O R P O W E RD I S S I P A T I O NP c (m W )AMBIENT TEMPERATURE Ta ()℃C O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (V )h FE ——Static CharacteristicC O L L E C T O R C U R R E N T I C (A )【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxLabel on the Outer BoxInner Box: 333 mm ×203mm ×42mmOuter Box: 493 mm × 400mm × 264mmQA LabelSeal the box with the tapeStamp “EMPTY”on the empty boxThe top gasketInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

2SA933AS三极管(TO-92S)

f —— T
I
C
β=10
-100 -150
100
TRANSITION FREQUENCY fT (MHz)
=25℃
=100℃
T a
T a
-1
-0.1 -0.0
100
10
1
COMMON EMITTER VCE=-6V
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMMITER VOLTAGE VBE (V)
Sponge strip
Sponge strip

3000 pcs
The top gasket
Label on the Inner Box
Inner Box: 333 mm×162mm×43mm Plastic bag
Stamp “EMPTY” on the empty box
Typical Characterisitics
COLLECTOR CURRENT IC (mA)
Static Characteristic
-8
1000
-30uA
COMMON
-27uA
EMITTER Ta=25℃
-24uA
-6
-21uA
-18uA
DC CURRENT GAIN hFE
-4
-15uA
100
V(BR)CBO V(BR)CEO V(BR)EBO ICBO
IC=-50μA,IE=0
IC=-1mA,IB=0 IE=-50μA,IC=0
VCB=-60V, IE=0
Emitter cut-off current DC current gain Collector-emitter saturation voltage

三极管封装形式三极管封装类型图文对照

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