电子元器件zvn4310a中文资料_数据手册_IC数据表

Turn-Off Delay Time (2)(3)
td(on)
tr td(off)
8
ns
25
ns
VDD ≈25V, VGEN=10V, ID=3A RGS=50Ω
30
ns
Fall Time (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ID(on)
9
20
nA VGS=± 20V, VDS=0V
10
µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
A
VDS=25 V, VGS=10V
Static Drain-Source On-State Resistance (1)
RDS(on)
1.0 0.75 0.50 0.25
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
150
D.C.
t1 D=t1/tP
100
tP
D=0.6
50
D=0.2
D=0.1
D=0.05
0
Single Pulse
V
ID=1mA, VGS=0V
Gate-Source Threshold Voltage
VGS(th)
1
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain Current
IGSS IDSS
On-State Drain Current(1)
Ptotp
1.13
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient Junction to Case
SYMBOL Rth(j-amb) Rth(j-case)
MAX.
150 50
UNIT
°C/W °C/W
Max Power Dissipation - (Watts) Thermal Resistance (°C/W)
ZVN4310A
ABSOLUTE MAXIMUM RATINGS.
D G S
E-Line TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
100
V
Continuous Drain Current at Tamb=25°C
ID
1.0 0.75 0.50 0.25
-40 -20 0 20 40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Derating curve
150
D.C.
t1 D=t1/tP
100
tP
D=0.6
50
D=0.2
D=0.1
D=0.05
0
Single Pulse
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient Junction to Case
SYMBOL Rth(j-amb) Rth(j-case)
MAX.
150 50
UNIT
°C/W °C/W
Max Power Dissipation - (Watts) Thermal Resistance (°C/W)
0.9
A
Practical Continuous Drain Current at
IDP
Tamb=25°C
1
A
Pulsed Drain Current
IDM
12
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
850
mW
Practical Power Dissipation at Tamb=25°C*
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-394
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available
ZVN4310A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Input Capacitance (2) Ciss
350 pF
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Common Source Output Capacitance (2)
Coss
140 pF
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Crss
Capacitance (2)
30
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
0.9
A
Practical Continuous Drain Current at
IDP
Tamb=25°C
1
A
Pulsed Drain Current
IDM
12
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
850
mW
Practical Power Dissipation at Tamb=25°C*
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
BVDSS 100
Breakdown Voltage
Ptotp
1.13
W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
Turn-Off Delay Time (2)(3)
td(on)
tr td(off)
8
ns
25
ns
VDD ≈25V, VGEN=10V, ID=3A RGS=50Ω
30
ns
Fall Time (2)(3)
tf
16
ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ቤተ መጻሕፍቲ ባይዱ
ZVN4310A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Input Capacitance (2) Ciss
350 pF
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (seconds)
Maximum transient thermal impedance
3-394
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available
ZVN4310A
ABSOLUTE MAXIMUM RATINGS.
D G S
E-Line TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
100
V
Continuous Drain Current at Tamb=25°C
ID
Common Source Output Capacitance (2)
Coss
140 pF
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Crss
Capacitance (2)
30
pF
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
0.36 0.5 Ω 0.48 0.65 Ω
VGS=10V,ID=3A VGS=5V, ID=1.5A
Forward
gfs
600
Transconductance
(1)(2)
mS VDS=25V,ID=3A
3-393
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