无线模块对讲机

RQA0001 Chip
SOT-89 Common Pkg
RQA0003 Chip
SOT-89 Common Pkg
New chip Compete with NE5510279A SOT-89 Immunity level:4
5/4/2009
Standard Products Introduction
2SK3390 modify 7.2 – 12V operate High Po
Immunity level:4
TBD TBD TBD
New chip Driver of 2W-5W Improve Vth=1V Po leak less (up to Pi=15dBm)
Immunity level:4
HVL147
MP6 (0603)
RKP200KP
CMPAK (SOT23)
RKX9157
1.2
2 0.35 Low Harmonic
1.3
10 0.35
0.8
10
0.2
Vari- Cap Diodes for RF Front End
RF Front End Block Diagram
Antenna
HVL142A
EFP (0806)
HVL144A RKP300KL
High Freq.
C max
Feature
(ohm) IF(mA) (pF)
1.3
10 0.35
2.5
10 0.37 High Isolation
1.3
10 0.35
1.8
2 0.43
4
10 0.35 Low Harmonic
0805
Antenna Output Po
Toshiba
0.5W 2SK3078
1W 2SK3376
2.5-3W 2SK3079
4-5W
2SK3075 2SK3476
Mitsubishi
RD01
RD01
RD07
NEC
NE5500179
NE5500179
Renesas
2SC5998 RQA0001 RQA0004*
HVL358C
V
V
24 13 1.85 0.3
EE V
HVD350B
V
Up to HVD372B
V
1GHz HVL368C
V
V
20 9 2.22 0.45 S
V
20 10.5 1.90 0.3
E
V
20 7.5 2.67 0.95* E
SPDT Switch Circuit
Antenna
Receiver Stage
5/4/2009
0603
Transmitter Stage
Standard Products Introduction
RFC PIN Diode
121 ©2006. Renesas Technology Corp., All rights reserved.
RX 0.12dB f=2.4GHz@6mA HVD142A 0.13dB f=2.4GHz@2mA HVD144A 0.20dB f=5.8GHz@2mA
0.12dB f=5.8GHz
HVD147 New
0.15dB f=5.8GHz RKP300KL New
Pre Driver Driver PA
－
RQA0002
0.8
RF PW MOSFETs on Sale
Type
RQA0001
RQA0002
RQA0003
RQA0004பைடு நூலகம்RQA0005 RQA0008 RQA0009
PKG
WSON0303-2 WSON0504-2 WSON0303-2 UPAK
UPAK
UPAK
UPAK
Freq
500MHz
3.8A
2.4A
0.3A
0.8A
2.4A
3.2A
Remark
EOL
New Chip New Package Line-Up
Keep current Biz only
New Chip New Package Line-Up
EOL
New Chip New Package Line-Up
New chip FA for 0.5W FRS, Driver for 2-5W SOT-89
PA,Driver Amplifier for TX stage
Please see the next slide
RRQQAAsseerriieess
Applications : Power amp. or driver amp. for wireless communications.
Ex. FRS: (for Po=0.5W to 2W) W/T : (for Po=2W to 5W)
High Frequency Front End Block Diagram
Discrete RX
RF IC
Antenna
LNA LNA Buffer
Discrete
SPDT SW
Discrete
TX PA Driver
Down
IF Amp
Converter
PLL
Buffer RFVCO
Up
IF Amp
RQA0004 28.0 dBm at f=500MHz
－
RQA0014 (0.63W)
－
RQA0004 RQA0014
RQA0005 RQA0008
31.5 dBm at f=500MHz (1.41W)
36.0 dBm at f=500MHz (4.0W)
Top view
Bottom view Side view
APPLICATION and NEW PRODUCTS
High Frequency MOSFET at
Digital Cordless Telephone, FRS and GMRS
By : Michelle, Buddy
5/4/2009
©2006. Renesas Technology Corp., All rights reserved.
New chip Improve ESD (Ref RQA0002) Compete with 2SK3476
Immunity level:4 Immunity level:4
OK
OK
OK
OK
OK
OK
RQA0009 Chip Thin Package
Immunity level:4
TBD TBD TBD
500MHz
500MHz
500MHz
500MHz
500MHz 500MHz
Appli. Po 0.5 - 1W
4 - 5W
2 - 3W
0.5 – 0.8W 1W
2 - 3W
2 - 4W
Pc Max 5W
15W
7W
3W
9W
10W
15W
Vds Max 16V
16V
16V
16V
16V
16V
16V
Id Max 0.8A
15W
15W
Vds Max 16V
16V
16V
32V
14V
Id Max
0.8A
3.8A
3.2A
3.5A
0.3A
Customer Uniden
Vertex
HYT
Kirisun, IDT HYT
Remark
ES PP MP
New Chip Improve ESD (Ref RQA0005) Compete with 2SK3756
The flat lead package lineup which is suitable for surface mount 1006(SFP), 0806(EFP), 0806Thin(TEFP)
Next SMD(0603) MP
U.D
Lineup of Variable Capacitance Diodes for RF Front End (RF and IF VCO)
PA Driver
Down Converter
RF VCO IF + PLL
Buffer
Transmitter
Package Photo
EFP 0.8X0.6mm
Up Converter
RF IC
Packag e
Type No.
Freq.(GHz)
~2.4
~5.8
SFP
HVD142A
(1006)
HVD191
PKG
UPAK
WSON0504-2 WSON0504-2 WSON0504-2 UPAK
Stop development Stop development
Freq
500MHz
500MHz
500MHz
430MHz
500MHz
Po
1W
4 - 5W
2 - 4W
4 – 6W
0.5W
Pc Max 9W
15W
15W
Discrete Devices for RF Front End
LNA
Main Application and Products Prepared SiGe Low Noise Transistor
SW
Prepared Low Loss Pin diode
PA and Driver Prepared High Power SiGe Transistor
1)Line ups
Trans mitter
Driver
Driver
PA
PA Output Power
2)PKG(UPAK/WSON-2)Outline
UPAK WSON-2
4.25max
2.5±0.1
4.5±0.1
RQA0004 RQA0005 RQA0008 RQA0009 RQA0014
Unit:mm
5.0 ± 0.05
4.0 ± 0.05
5R/4/Q20A090004StandardRPQrodAuc0ts0In0tr2oduction 38.5 dBm at f=500MHz RQA0014 RQA0009* (7.08W)
117 ©2006. Renesas Technology Corp., All rights reserved.
Others
DRF1401 (ETC)
5/4/2009
Standard Products Introduction
120 ©2006. Renesas Technology Corp., All rights reserved.
2SK2595 RQA0001 RQA0005
NE5500279 NE5510279
NF and Frequency LNA
LNA Buffer
1.5dB f=5.8GHz
1.0dB f=2.4GHz
2SC5820
1.6dB f=2.4GHz 2SC5820
2SC5594
SPDT SW
TX
RFC
Pin diode
Antenna-Switching circuit
Loss and Frequency Pin Diode
Variable Capacitance Package variation
Diodes for VCO
UFP/SFP EFP/TEFP MP6
Characteristics C/0.5 C/2.5 n rs
Features
Cellular Phone
Wireless
N rs LF GSMCDMA LAN
Receiver
LNA Switch
PA Driver
Transmitter
Down Converter
RF VCO
IF
+
Buffer
PLL
Up Converter
RF IC
Variable Capacitance Diodes for High Frequency
Low capacitance, Low rs Excellent linearity characteristics
RQA0003 RQA0008
RD54003 (ST)
NE5500179
2SK2596 RQA0002 RQA0009*
RD54008 (ST)
PIN Diodes for RF Front End
RF Front End Block Diagram
Receive
Antenna
LNA SPDT Switch
118 ©2006. Renesas Technology Corp., All rights reserved.
New Products (12-13 are considerable for CHINA market)
Type
RQA0010 RQA0011
RQA0012
RQA0013
RQA0014
OK OK Jun ‘09
5/4/2009
Standard Products Introduction
119 ©2006. Renesas Technology Corp., All rights reserved.
COMPANY CONFIDENTIAL
Output Products recommendation by 400-500MHz Set Pout
Converter
B/B IC
5/4/2009
Standard Products Introduction
116 ©2006. Renesas Technology Corp., All rights reserved.
Low Noise Amplifier for RX stage
LNA LNA Buffer