2SC4420中文资料

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CS22中文资料

32IXYS reserves the right to change limits, test conditions and dimensionsPhase Control ThyristorsElectrically Isolated Tab V RSM V RRM TypeV DSM V DRM V V 800 800CS 22-08io1M 12001200CS 22-12io1MSymbol ConditionsMaximum RatingsI T(AV)M T C = 85°C 180° sine ①16A T A = 25°C 180° sine ② 2.5A I TSMT VJ = 45°C t = 10 ms (50 Hz), sine 300A V R = 0 V t = 8.3 ms (60 Hz), sine 340A T VJ = T VJM t = 10 ms (50 Hz), sine 250A V R = 0 Vt = 8.3 ms (60 Hz), sine 285A I 2tT VJ = 45°C t = 10 ms (50 Hz), sine 450A 2s V R = 0 V t = 8.3 ms (60 Hz), sine 480A 2s T VJ = T VJM t = 10 ms (50 Hz), sine 300A 2s V R = 0 Vt = 8.3 ms (60 Hz), sine337A 2s (di/dt)crT VJ = T VJM repetitive, I T = 20 A 150A/µsf = 50Hz, t P = 200µs V D = 2/3 V DRM I G = 0.08 A non repetitive, I T = I T(AV)M 500A/µs di G /dt = 0.08 A/µs(dv/dt)cr T VJ = T VJM , V DR = 2/3 V DRM1000V/µs R GK = ∞, method 1 (linear voltage rise)P GM T VJ = T VJM t P = 30 µs 10W I T = I T(AV)Mt P = 300 µs5W P GAV 0.5W V RGM 10V T VJ -40...+150°C T VJM 150°C T stg -40...+125°C M dMounting torque M 3 or UNC 4-400.5-0.8Nm Weight3gFeatures•Thyristor for frequencies up to 400Hz •International standard package •Epoxy meets UL 94V-0•High performance glass passivated chip •Long-term stability of leakage current and blocking voltage•Plasitc overmolded tab for electrical isolation Applications•Motor control •Power converter •AC power controller•Light and temperature control•SCR for inrush current limiting in power supplies or AC drive Advantages•Space and weight savings •Simple mountingACGV RRM = 800-1200 V I T(AV)M = 16 AA = Anode, C = Cathode, G = Gate Tab = Isolated0 IsolatedA AC ① mounted on heatsink Data according to IEC 60747② without heatsink32IXYS reserves the right to change limits, test conditions and dimensionsSymbol ConditionsCharacteristic ValuesI R , I D T VJ = T VJM , V R = V RRM , V D = V DRM ≤5mA V T I T= 30 A, T VJ = 25°C≤1.5V V T0For power-loss calculations only (T VJ = 150°C)0.9V r T 18m ΩV GT V D = 6 V T VJ = 25°C ≤ 1.5V T VJ = -40°C ≤ 2.5V I GT V D = 6 VT VJ = 25°C ≤30mA T VJ = -40°C≤50mA V GD T VJ = T VJM , V D = 2/3 V DRM≤0.2V I GD ≤3mA I L T VJ = 25°C, t P = 10 µs≤100mA I G = 0.08 A, di G /dt = 0.08 A/µs I H T VJ = 25°C, V D = 6 V, R GK =∞≤80mA t gd T VJ = 25°C, V D = ½ V DRM≤2µs I G = 0.08 A, di G /dt = 0.08 A/µs R thJC DC current 2.5K/W R thCH DC current 0.5K/W R thJA DC current50K/W aMax. acceleration, 50 Hz50m/s 2Package Outline。

2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」

6.瑞萨科技公司事先书面批准,不得翻印或再现全部或部分这些物料.
7.如果这些产品或技术受日本出口管理限制,必须是日本政府根据许可证出口,不能导入比批准目地以外国家.
禁止任何转移或再出口违反出口管制法律和日本及/或目地国家相关规定.
8.请与瑞萨科技公司对这些材料或产品进一步详情其中所载.
芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注：1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间上升时间关断延迟时间下降时间身体向前漏二极管电压

芯片datasheet---mic4420

Electrical Characteristics: (T A = 25°C with 4.5V ≤ V S ≤ 18V unless otherwise specified.)Symbol ParameterConditionsMinTypMaxUnitsINPUT V IH Logic 1 Input Voltage 2.41.4V V IL Logic 0 Input Voltage 1.10.8V V IN Input Voltage Range –5V S + 0.3V I IN Input Current0 V ≤ V IN ≤ V S–1010µAOUTPUT V OH High Output Voltage See Figure 1V S –0.025V V OL Low Output Voltage See Figure 10.025V R O Output Resistance,I OUT = 10 mA, V S = 18 V 1.7 2.8ΩOutput Low R O Output Resistance,I OUT = 10 mA, V S = 18 V 1.5 2.5ΩOutput High I PK Peak Output Current V S = 18 V (See Figure 5)6A I RLatch-Up Protection>500mAWithstand Reverse CurrentSWITCHING TIME (Note 3)t R Rise Time Test Figure 1, C L = 2500 pF 1235ns t F Fall Time Test Figure 1, C L = 2500 pF 1335ns t D1Delay Time Test Figure 11875ns t D2Delay TimeTest Figure 14875nsPOWER SUPPLYI S Power Supply Current V IN = 3 V 0.45 1.5mA V IN = 0 V90150µA V SOperating Input Voltage4.518VAbsolute Maximum Ratings (Notes 1, 2 and 3)Supply Voltage (20V)Input Voltage...............................V S + 0.3V to GND – 5V Input Current (V IN > V S ).........................................50mA Power Dissipation, T A ≤ 25°CPDIP...................................................................960W SOIC .............................................................1040mW 5-Pin TO-220..........................................................2W Power Dissipation, T C ≤ 25°C5-Pin TO-220.....................................................12.5W Derating Factors (to Ambient)PDIP............................................................7.7mW/°C SOIC ...........................................................8.3mW/°C 5-Pin TO-220................................................17mW/°C Storage Temperature............................–65°C to +150°C Lead Temperature (10 sec.)..................................300°COperating RatingsJunction Temperature............................................150°C Ambient TemperatureC Version ................................................0°C to +70°C B Version.............................................–40°C to +85°C Package Thermal Resistance5-pin TO-220 (θJC )..........................................10°C/W 8-pin MSOP (θJA )..........................................250°C/W查询"MIC4420"供应商where:I H =quiescent current with input high I L =quiescent current with input lowD =fraction of time input is high (duty cycle)V S =power supply voltageTransition Power DissipationTransition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from V +S to ground. The transi-tion power dissipation is approximately:P T = 2 f V S (A•s)where (A•s) is a time-current factor derived from the typical characteristic curves.Total power (P D ) then, as previously described is:P D = P L + P Q +P TDefinitionsC L =Load Capacitance in Farads.D =Duty Cycle expressed as the fraction of time theinput to the driver is high.f =Operating Frequency of the driver in Hertz I H =Power supply current drawn by a driver whenboth inputs are high and neither output is loaded.I L =Power supply current drawn by a driver whenboth inputs are low and neither output is loaded.I D =Output current from a driver in Amps.P D =Total power dissipated in a driver in Watts.P L =Power dissipated in the driver due to the driver’sload in Watts.P Q =Power dissipated in a quiescent driver in Watts.P T =Power dissipated in a driver when the outputchanges states (“shoot-through current”) in Watts.NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is shown by the "Typical Characteristic Curve :Crossover Area vs. Supply Voltage and is in ampere-seconds. This figure must be multiplied by the number of repetitions per second (fre-quency) to find Watts.R O =Output resistance of a driver in Ohms.V S =Power supply voltage to the IC in Volts.Capacitive Load Power DissipationDissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described by the equation:E = 1/2 C V 2As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage on the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capaci-tive load:P L = f C (V S )2where:f =Operating Frequency C =Load Capacitance V S =Driver Supply Voltage Inductive Load Power DissipationFor inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case:P L1 = I 2 R O DHowever, in this instance the R O required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state,depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described asP L2 = I V D (1-D)where V D is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipa-tion must be summed in to produce P LP L = P L1 + P L2Quiescent Power DissipationQuiescent power dissipation (P Q , as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤0.2mA; a logic high will result in a current drain of ≤2.0mA.Quiescent power can therefore be found from:P Q = V S [D I H + (1-D) I L ]查询"MIC4420"供应商。

2SC4250中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」

集电极 - 发射极击穿电压 DC电流增益
反向传输电容过渡频率转换增益噪声系数
(Ta = 25°C)
符号
测试条件
ICBO IEBO V (BR) CEO hFE Cre
fT Gce NF
VCB = 25 V, I E = 0 VEB = 3 V, I C = 0 IC = 1毫安,我B = 0 VCE = 10 V, I C = 5毫安 VCB = 10 V, I E = 0, f = 1兆赫 VCE = 10 V, I C = 5毫安 VCC = 12 V, f = 200兆赫,女 L = 260兆赫（图1）
• 请联系您的东芝销售代表了解详细信息,以环境问题,如产品的RoHS指令的兼容性. 请遵守产品使用与规范纳入或使用受控物质,包括但不限于,欧盟RoHS指令的所有适用的法律和法规.东芝对发生违规作为适用的法律和法规而导致的损害或损失不承担任何责任.
5
2007-11-01
• 东芝公司及其子公司和附属公司（统称为“TOSHIBA”）,保留这份文件中更改信息的权利,以及相关的硬件,软件和系统（统称为“产品”）,恕不另行通知.
• 本文档以及任何信息均不得转载未经东芝事先书面许可.即使东芝的书面许可,复制是允许的,只要在没有任何改动/遗漏.
• 虽然东芝的作品不断地提高产品的质量和可靠性,产品会发生故障或失败.客户负责符合安全标准和用于提供充分的设计和保障其硬件,软件和这最大限度地降低风险,并避免出现在产品的故障或失效可能导致生命丧失,身体系统人身伤害或财产损失,包括数据丢失或损坏.在创作和制作的设计和使用,客户必须也指,符合（一）中的所有相关信息,东芝的最新版本,包括但不限于本文件, 规格,数据表和应用笔记产品的注意事项和条件中规定的“TOSHIBA 半导体可靠性手册“和（b）对于该产品将与或使用的应用程序的说明.客户全权负责自己的产品设计或应用程序的各个方面,包括但不限于：（a）确定的利用这样的设计或应用该产品的适当性; （b）评价和确定本文档中包含的任何信息的适用性,或图表,图表,程序,算法,示例应用电路,或任何其他引用文件; （三）验证这样的设计和应用的所有运行参数.

442SA2TADN中文资料

®Linear Motion 1/4 Watt Composition Slide Controls•11/4" (31.7mm) slider travel•1/4watt power rating •Choice of resistance tapers •Economical•Wide resistance range•Choice of mounting stylesElectrical and Mechanical SpecificationsResistance Range200 ohms through 5 megaohmsResistance ToleranceStandard:±20%Available:±10%Power Rating, Watts1/4watt @ 55°C derated to no load @ 85°C,linear taper, control mounted on steel panel4" x 4" x .050" (101.6mm x 101.6mm x 1.27mm). Voltage RatingAcross end terminals:Linear curves — 500 VDCTapered curves — 350 VDC(Not to exceed wattage ratings)Between case and end terminals:1080 VAC RMSResistance TapersStandard:LinearSpecial:Available upon request Slide TravelMechanical — 11/4inches (31.7mm)Effective — 11/4inches (31.7mm)Shaft InformationSee illustrations, page 2.Operating ForceEither direction 1 to 9 in-oz. (28 to 256 gf-cm)Measured .250" (6.35mm) from base of slider.Stop StrengthMaximum — 35 in-lbs. (15.9 kg-cm) measuredat base of slider.Terminal InformationStraight, vertical or snap-in to printed circuit board,wirewrap or solder lug styles.Mounting InformationTop, bottom, side or no twist tab mounting —refer to illustrations, page 2.FeaturesOperating Temperature0°C - +70°C•RoHS compliant1-2©2006CTS C orporati o n. A ll r i g hts r eserved. I nformati o n s ubject t o c hange.9/21/06 CTS Electronic Components Ordering Information CTS Series 442DIMENSION:mmINCHSUGGESTED PANEL PIERCING VIEWED FROM TOP SIDE FOR TWIST TABS AND ACTUATOR FROM TOP SIDE FOR TWIST TABS SUGGESTED PANEL PIERCING VIEWED2.03851.77SUGGESTED PANEL PIERCING VIEWED FROMCENTERLINE OF CONTROL FOR VERTICAL P.C. TERMINALS CONTROL SIDE FOR STRAIGHT P.C. & WIREWRAP TERMINALSSUGGESTED PANEL PIERCING VIEWED FROMALTERNATE TERMINAL STYLESNO MOUNT2-2©2006CTS C orporati o n. A ll r i g hts r eserved. I nformati o n s ubject t o c hange.9/21/06 CTS Electronic Components CONTROL SIDE FOR SNAP-IN P.C. TERMINALSSUGGESTED PANEL PIERCING VIEWED FROM。

2SC4422中文资料

IMAG. –268.988 –221.759 –167.756 –133.425 –110.501 –94.442 –82.874 –73.836 –67.183 –61.241
Yre (mS) REAL 0.000 0.005 0.006 0.024 0.025 0.056 0.079 0.124 0.180 0.246
2.0 IE = 0 f = 1 MHz
1.6
1.2
0.8
0.4
0
1
2
5 10 20
50
Collector to Base Voltage VCB (V)
Power Gain PG (dB)
Power Gain vs. Collector Current
20 VCE = 0 f = 900 MHz
16
–0.2
–0.4 –0.6 –0.8 –1
–10
–5 –4 –3
–2 –1.5
6
Hale Waihona Puke S Parameters (Emitter Common)
Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω
Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000
REAL
IMAG.
0.175
0.922
0.218
1.731
0.206
2.618
0.250
3.531
0.295
4.395
0.421
5.324
0.387
6.235
0.413
7.209
0.338
8.218

TC4429COA;TC4420COA;TC4429CPA;TC4420CPA;TC4420EPA;中文规格书,Datasheet资料

VDD Output
DS21419C-page 2
/
2004 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V Input Voltage .................................. – 5V to VDD + 0.3V Input Current (VIN > VDD)................................... 50 mA Power Dissipation (TA ≤ 70°C)
- 4.5V to 18V • High Capacitive Load Drive Capability: 10,000 pF • Short Delay Time: 55 ns (typ.) • CMOS/TTL Compatible Input • Low Supply Current With Logic ‘1’ Input:
TC4420/TC4429
† Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.

CLM4420资料

High Speed MOSFET Drivers CLM4420 / CLM4429FEATURES•Latch Up Protected. . . . . . . . . . . . . . . . . . . . . . . . . >1.5A •Logic Input Swing. . . . . . . . . . . . . . . . . . . . . Negative 5V •ESD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV •Matched Rise and Fall Times. . . . . . . . . . . . . . . . . . 20nsAPPLICATIONS•Motor Controls•Switch-Mode Power Supplies•Pulse Transformer Driver•Class D Switching Amplifiers DESCRIPTIONThe CLM4420 and CLM4429 family operate over 4.5V to 18V, can withstand high current peaking of 6A and have matched rise and fall times under 25ns. The product has been designed utilizing Calogic’s rugged CMOS process with protection for latch up and ESD. The product is available in inverting (CLM4429) and noninverting (CLM4420) configurations. ORDERING INFORMATIONPart#Logic Package Temperature Range CLM4420CP Noninverting8-Pin PDIP0C to +70C CLM4420EP Noninverting8-Pin PDIP-40o C to +85o C CLM4420CY Noninverting8-Pin SOIC0o C to +70o C CLM4420EY Noninverting8-Pin SOIC-40o C to +85o C CLM4429CP Inverting8-Pin PDIP0o C to +70o C CLM4429EP Inverting8-Pin PDIP-40o C to +85o C CLM4429CY Inverting8-Pin SOIC0o C to +70o C CLM4429EY Inverting8-Pin SOIC-40o C to +85oCABSOLUTE MAXIMUM RATINGSSupply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to >V DD Input Current (V IN > V DD). . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation, T A≤ 25o CPDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W SOIC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Derating Factors (T o Ambient)PDIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/o C SOIC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4mW/o C Storage T emperature Range. . . . . . . . . . . . -55o C to +150o C Operating T emperature (Chip). . . . . . . . . . . . . . . . . . . +150o C Operating Temperature Range (Ambient)C Version. . . . . . . . . . . . . . . . . . . . . . . . . . . . 0o C to +70o C E Version. . . . . . . . . . . . . . . . . . . . . . . . . . -40o C to +85o C Lead Temperature (Soldering, 10 sec). . . . . . . . . . . . +300o C Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended-periods may affect device reliability.ELECTRICAL CHARACTERISTICS: T A = +25o C with 4.5V ≤ V DD≤18V, unless otherwise specified.ELECTRICAL CHARACTERISTICS:Measured over operating temperature range with 4.5V ≤ V DD≤ 18V, unless otherwise specified.Note: 1. Switching times guaranteed by design.DIE SIZE 76 X 77 (INCHES)DD INV OUT GNDOUTGND GNDDDV DIE SIZE 76 X 77 (mm)。

MIC4422YM TR;MIC4422ZM;MIC4421YM;MIC4421ZT;MIC4422ZT;中文规格书,Datasheet资料

9A-Peak Low-Side MOSFET DriverBipolar/CMOS/DMOS ProcessGeneral DescriptionMIC4421 and MIC4422 MOSFET drivers are rugged, ef-ﬁcient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.Both versions are capable of 9A (peak) output and can drive the largest MOSFETs with an improved safe operating mar-gin. The MIC4421/4422 accepts any logic input from 2.4V to V S without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5V without damaging the part. Additional circuits protect against damage from electrostatic discharge.MIC4421/4422 drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost.Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS insures adequate gate voltage to the MOS-FET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.Features• BiCMOS/DMOS Construction• Latch-Up Proof: Fully Isolated Process is Inherently Immune to Any Latch-up.• Input Will Withstand Negative Swing of Up to 5V• Matched Rise and Fall Times ...............................25ns • High Peak Output Current ...............................9A Peak • Wide Operating Range ..............................4.5V to 18V • High Capacitive Load Drive ...........................47,000pF • Low Delay Time .............................................30ns Typ.• Logic High Input for Any Voltage from 2.4V to V S• Low Equivalent Input Capacitance (typ) .................7pF • Low Supply Current ..............450µA With Logic 1 Input • Low Output Impedance .........................................1.5Ω• Output Voltage Swing to Within 25mV of GND or V SApplications• Switch Mode Power Supplies • Motor Controls• Pulse Transformer Driver • Class-D Switching Ampliﬁers • Line Drivers• Driving MOSFET or IGBT Parallel Chip Modules • Local Power ON/OFF Switch •Pulse GeneratorsFunctional DiagramVMicrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • Ordering InformationPart Number Standard PbFreeConﬁguration Temp. Range Package MIC4421BM MIC4421YM Inverting –40ºC to +85ºC 8-pin SOIC MIC4421BN MIC4421YN Inverting –40ºC to +85ºC 8-pin DIP MIC4421CM MIC4421ZM Inverting –0ºC to +70ºC 8-pin SOIC MIC4421CN MIC4421ZN Inverting –0ºC to +70ºC 8-pin DIP MIC4421CT MIC4421ZT Inverting –0ºC to +70ºC 5-pin TO-220MIC4422BM MIC4422YM Non-inverting –40ºC to +85ºC 8-pin SOIC MIC4422BN MIC4422YN Non-inverting –40ºC to +85ºC 8-pin DIP MIC4422CM MIC4422ZM Non-inverting –0ºC to +70ºC 8-pin SOIC MIC4422CN MIC4422ZN Non-inverting –0ºC to +70ºC 8-pin DIP MIC4422CT MIC4422ZTNon-inverting–0ºC to +70ºC5-pin TO-220Pin ConﬁgurationsV S OUT OUT GNDV S IN NC GND Plastic DIP (N) SOIC (M)5OUT 4GND 3VS 2GND 1INTO-220-5 (T)Pin DescriptionPin Number Pin Number Pin NamePin Function TO-220-5 DIP , SOIC1 2 IN Control Input2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together. 3, TAB 1, 8 V S Supply Input: Duplicate pins must be externally connected together. 5 6, 7 OUT Output: Duplicate pins must be externally connected together.3NCNot connected.Electrical Characteristics: (T A = 25°C with 4.5 V ≤ V S ≤ 18 V unless otherwise speciﬁed.)Symbol ParameterConditionsMinTypMaxUnitsINPUT V IH Logic 1 Input Voltage 2.4 1.3 V V IL Logic 0 Input Voltage 1.1 0.8 V V IN Input Voltage Range–5 V S +0.3 V I IN Input Current0 V ≤ V IN ≤ V S–1010µAOUTPUT V OH High Output Voltage See Figure 1 V S –.025V V OL Low Output Voltage See Figure 10.025 V R O Output Resistance, I OUT = 10 mA, V S = 18 V 0.6 Ω Output High R O Output Resistance, I OUT = 10 mA, V S = 18 V 0.8 1.7 Ω Output LowI PK Peak Output Current V S = 18 V (See Figure 6) 9 A I DC Continuous Output Current2 A I R Latch-Up ProtectionDuty Cycle ≤ 2% >1500mAWithstand Reverse Current t ≤ 300 µsSWITCHING TIME (Note 3)t R Rise Time Test Figure 1, C L = 10,000 pF 20 75 ns t F Fall Time Test Figure 1, C L = 10,000 pF 24 75 ns t D1 Delay Time Test Figure 1 15 60 ns t D2 Delay TimeTest Figure 1 35 60 ns POWER SUPPLYI S Power Supply Current V IN = 3 V 0.4 1.5 mAV IN = 0 V 80 150 µA V SOperating Input Voltage4.518VOperating RatingsJunction Temperature ................................................150°C Ambient TemperatureC Version ....................................................0°C to +70°C B Version ................................................–40°C to +85°C Thermal Resistance5-Pin TO-220 (θJC ) ...............................................10°C/WAbsolute Maximum Ratings (Notes 1, 2 and 3)Supply Voltage ..............................................................20V Input Voltage ...................................V S + 0.3V to GND – 5V Input Current (V IN > V S ) ..............................................50 mA Power Dissipation, T A ≤ 25°CPDIP ....................................................................960mW SOIC ..................................................................1040mW 5-Pin TO-220 ..............................................................2W Power Dissipation, T CASE ≤ 25°C5-Pin TO-220 .........................................................12.5W Derating Factors (to Ambient)PDIP ................................................................7.7mW/°C SOIC ................................................................8.3mW/°C 5-Pin TO-220 ....................................................17mW/°C Storage Temperature ................................–65°C to +150°C Lead Temperature (10 sec) .......................................300°CFigure 1. Inverting Driver Switching TimeElectrical Characteristics: (Over operating temperature range with 4.5V ≤ V S ≤ 18V unless otherwise speciﬁed.)Symbol ParameterConditionsMinTypMax Units INPUT V IH Logic 1 Input Voltage 2.4 1.4 V V IL Logic 0 Input Voltage 1.0 0.8 V V IN Input Voltage Range–5 V S +0.3 V I IN Input Current0V ≤ V IN ≤ V S–1010 µA OUTPUT V OH High Output Voltage Figure 1 V S –.025V V OL Low Output Voltage Figure 10.025 V R O Output Resistance, I OUT = 10mA, V S = 18V 0.8 3.6 Ω Output High R O Output Resistance, I OUT = 10mA, V S = 18V1.32.7ΩOutput Low SWITCHING TIME (Note 3)t R Rise Time Figure 1, C L = 10,000pF 23 120 ns t F Fall Time Figure 1, C L = 10,000pF 30 120 ns t D1 Delay Time Figure 1 20 80 ns t D2 Delay TimeFigure 1 40 80 ns POWER SUPPLYI S Power Supply Current V IN = 3V 0.6 3 mAV IN = 0V 0.1 0.2 V SOperating Input Voltage4.518VNote 1: Functional operation above the absolute maximum stress ratings is not implied.Note 2: Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to prevent damage from static discharge.Note 3:Switching times guaranteed by design.Test CircuitsV OUTPUTINPUTV S OUTPUTINPUTFigure 2. Noninverting Driver Switching TimeSUPPLY VOLTAGE (V)R I S E T I M E (n s )Rise TimeCAPACITIVE LOAD (pF)R I S E T I M E (n s )Rise Time101010VOLTAGE (V)C R O S S O V E R E N E R G Y (A •s )Crossover EnergyCAPACITIVE LOAD (pF)S U P P L Y C U R R E N T (m A )Supply CurrentCAPACITIVE LOAD (pF)S U P P L Y C U R R E N T (m A )Supply CurrentCAPACITIVE LOAD (pF)S U P P L Y C U R R E N T (m A )Supply CurrentTypical CharacteristicsFREQUENCY (Hz)S U P P L Y C U R R E N T (m A )Supply CurrentFREQUENCY (Hz)S U P P L Y C U R R E N T (m A )Supply CurrentFREQUENCY (Hz)S U P P L Y C U R R E N T (m A )Supply CurrentSUPPLY VOLTAGE (V)T I M E (n s )Propagation DelayINPUT (V)T I M E (n s )Propagation DelayTEMPERATURE (°C)Q U I E S C E N T S U P P L Y C U R R E N T (µA )Quiescent Supply CurrentSUPPLY VOLTAGE (V)H I G H -S T A T E O U T P U T R E S I S T A N C E (Ω)High-State Output Resist.SUPPLY VOLTAGE (V)L O W -S T A T E O U T P UT R E S I S T A N C E (Ω)Low-State Output Resist.TEMPERATURE (°C)T I M E (n s )Propagation Delay Typical CharacteristicsApplications InformationSupply BypassingCharging and discharging large capacitive loads quickly requires large currents. For example, charging a 10,000pF load to 18V in 50ns requires 3.6A.The MIC4421/4422 has double bonding on the supply pins, the ground pins and output pins. This reduces parasitic lead inductance. Low inductance enables large currents to be switched rapidly. It also reduces internal ringing that can cause voltage breakdown when the driver is operated at or near the maximum rated voltage.Internal ringing can also cause output oscillation due to feedback. This feedback is added to the input signal since it is referenced to the same ground.Figure 3. Direct Motor DriveFigure 4. Self Contained Voltage DoublerØ1CONTROLTo guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low inductance ceramic disk capacitors with short lead lengths (< 0.5 inch) should be used. A 1µF low ESR ﬁlm capacitor in parallel with two 0.1µF low ESR ceramic capacitors, (such as AVX RAM Guard ®), provides adequate bypassing. Connect one ceramic capacitor directly between pins 1 and 4. Connect the second ceramic capacitor directly between pins 8 and 5.GroundingThe high current capability of the MIC4421/4422 demands careful PC board layout for best performance. Since the MIC4421 is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switching speed. Feedback is especially noticeable with slow-rise time inputs. The MIC4421 input structure includes about 200mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended.Figure 5 shows the feedback effect in detail. As the MIC4421 input begins to go positive, the output goes negative and several amperes of current ﬂow in the ground lead. As little as 0.05Ω of PC trace resistance can produce hundreds of millivolts at the MIC4421 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillation may result.To insure optimum performance, separate ground traces should be provided for the logic and power connections. Con-necting the logic ground directly to the MIC4421 GND pins will ensure full logic drive to the input and ensure fast output switching. Both of the MIC4421 GND pins should, however, still be connected to power ground.Table 1: MIC4421 MaximumOperating Frequency V S Max Frequency 18V 220kHz 15V 300kHz 10V 640kHz 5V 2MHzConditions: 1. θJA = 150°C/W2. T A = 25°C3. C L = 10,000pFdissipation limit can easily be exceeded. Therefore, some attention should be given to power dissipation when driving low impedance loads and/or operating at high frequency.The supply current vs. frequency and supply current vs capacitive load characteristic curves aid in determining power dissipation calculations. Table 1 lists the maximum safe operating frequency for several power supply volt-ages when driving a 10,000pF load. More accurate power dissipation ﬁgures can be obtained by summing the three dissipation sources.Given the power dissipation in the device, and the thermal resistance of the package, junction operating temperature for any ambient is easy to calculate. For example, the thermal resistance of the 8-pin plastic DIP package, from the data sheet, is 130°C/W. In a 25°C ambient, then, using a maximum junction temperature of 150°C, this package will dissipate 960mW.Accurate power dissipation numbers can be obtained by summing the three sources of power dissipation in the device:• Load Power Dissipation (P L )• Quiescent power dissipation (P Q )• Transition power dissipation (P T )Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive.Resistive Load Power DissipationDissipation caused by a resistive load can be calculated as: P L = I 2 R O Dwhere:I = the current drawn by the loadR O = the output resistance of the driver when the output is high, at the power supply voltage used. (See data sheet)D = fraction of time the load is conducting (duty cycle)Figure 5. Switching Time Degradation Due toNegative FeedbackInput StageThe input voltage level of the MIC4421 changes the quies-cent supply current. The N channel MOSFET input stage transistor drives a 320µA current source load. With a logic “1” input, the maximum quiescent supply current is 400µA. Logic “0” input level signals reduce quiescent current to 80µA typical.The MIC4421/4422 input is designed to provide 300mV of hysteresis. This provides clean transitions, reduces noise sensitivity, and minimizes output stage current spiking when changing states. Input voltage threshold level is ap-proximately 1.5V, making the device TTL compatible over the full temperature and operating supply voltage ranges. Input current is less than ±10µA.The MIC4421 can be directly driven by the TL494, SG1526/1527, SG1524, TSC170, MIC38C42, and similar switch mode power supply integrated circuits. By ofﬂoading the power-driving duties to the MIC4421/4422, the power supply controller can operate at lower dissipation. This can improve performance and reliability.The input can be greater than the V S supply, however, cur-rent will ﬂow into the input lead. The input currents can be as high as 30mA p-p (6.4mA RMS ) with the input. No damage will occur to MIC4421/4422 however, and it will not latch.The input appears as a 7pF capacitance and does not change even if the input is driven from an AC source. While the device will operate and no damage will occur up to 25V below the negative rail, input current will increase up to 1mA/V due to the clamping action of the input, ESD diode, and 1kΩ resistor.Power DissipationCMOS circuits usually permit the user to ignore power dissipation. Logic families such as 4000 and 74C have out-puts which can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough current to destroy the device. The MIC4421/4422 on the other hand, can source or sink several amperes and drive large capacitive loads at high frequency. The package powerTransition Power DissipationTransition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a current is conducted through them from V S to ground. The transition power dissipation is approximately:P T = 2 f V S (A•s)where (A•s) is a time-current factor derived from the typical characteristic curve “Crossover Energy vs. Supply Volt-age.”Total power (P D ) then, as previously described is just P D = P L + P Q + P TDeﬁnitionsC L = Load Capacitance in Farads.D = Duty Cycle expressed as the fraction of time theinput to the driver is high. f = Operating Frequency of the driver in Hertz I H = Power supply current drawn by a driver when bothinputs are high and neither output is loaded. I L = Power supply current drawn by a driver when bothinputs are low and neither output is loaded. I D = Output current from a driver in Amps. P D = Total power dissipated in a driver in Watts. P L = Power dissipated in the driver due to the driver’sload in Watts. P Q = Power dissipated in a quiescent driver in Watts.P T = Power dissipated in a driver when the outputchanges states (“shoot-through current”) in Watts. NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is stated in Figure 7 in ampere-nanoseconds. This ﬁgure must be multiplied by the number of repeti-tions per second (frequency) to ﬁnd Watts. R O = Output resistance of a driver in Ohms.V S = Power supply voltage to the IC in Volts.Capacitive Load Power DissipationDissipation caused by a capacitive load is simply the energy placed in, or removed from, the load capacitance by the driver. The energy stored in a capacitor is described by the equation:E = 1/2 C V 2As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage in the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capacitive load: P L = f C (V S )2where:f = O perating Frequency C = L oad CapacitanceV S =D river Supply Voltage Inductive Load Power DissipationFor inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case:P L1 = I 2 R O DHowever, in this instance the R O required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the induc-tor is forcing current through the driver, dissipation is best described asP L2 = I V D (1 – D)where V D is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipation must be summed in to produce P LP L = P L1 + P L2Quiescent Power DissipationQuiescent power dissipation (P Q , as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA. Quiescent power can therefore be found from: P Q = V S [D I H + (1 – D) I L ]where: I H = quiescent current with input high I L = quiescent current with input lowD = fraction of time input is high (duty cycle)V S =power supply voltageFigure 6. Peak Output Current Test Circuit分销商库存信息:MICRELMIC4422YM TR MIC4422ZM MIC4421YM MIC4421ZT MIC4422ZT MIC4421ZN MIC4421ZM MIC4422ZN MIC4421YN MIC4421ZM TR MIC4422ZM TR MIC4421YM TR MIC4422YM MIC4422YN MIC4421BM MIC4422BM MIC4422BN MIC4421BM TR MIC4421BN MIC4421CM MIC4421CM TR MIC4421CN MIC4421CT MIC4422CM MIC4422CM TR MIC4422CN MIC4422CT MIC4422BM TR MIC4422BMTR。

TC4422_中文数据手册

注：除非另外说明，否则 TA = +25°C 且 4.5V ≤ VDD ≤ 18V。
tRISE (nsec)
220
200
180 22,000 pF
160
140
120 10,000 pF
100
80 4700 pF
60
40 1000 pF
20
0
4
6
8 10 12 14 16 18
VDD (V)பைடு நூலகம்
图 2-1：上升时间—供电电压曲线
— °C/W
DS21420D_CN 第 4 页
2006 Microchip Technology Inc.
TC4421/TC4422
2.0 典型性能曲线
注：
以下图表来自有限数量样本的统计结果，仅供参考。所列出的性能特性未经测试，不做任何保证。一些图表中列出的数据可能超出规定的工作范围（例如，超出了规定的电源电压范围），因此不在担保范围内。
NC 3 GND 4
TC4421 TC4422
8 VDD
VDD
7 OUTPUT OUTPUT
6 OUTPUT OUTPUT
5 GND
GND
5 引脚 TO-220
抽头与 VDD 引脚共用
TC4421 TC4422
注 1：两个相同功能的引脚必须同时连接才能正常工作。 2： DFN 封装裸露的焊垫是绝缘的。
50
0
100
1000
10,000
100,000
CLOAD (pF)
图 2-2：上升时间—容性负载曲线
300
5V 250
10V 200
tFALL (nsec)

2SA1020中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」

1.60 Max
E 0.35 0.65 M 0.00 0.40
F 0.30 0.51 N
4.00 Min
G
1.50 TYP.
(T = 25°C除非另有说明）
符号 V V V I P
T ,T
额定值
-50 -50 -5 -2 900 150, -55~150
单元
V V V A mW °C
(T = 25°C除非另有说明）
31日 - 12月2010修订版B
基地
发射器
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 5.50 6.50 H 1.70 2.05
B 8.00 9.00 J 2.70 3.20
C 12.70 14.50 K 0.85 1.15
D 4.50 5.30 L
符号
V V V
I I h h V V f C T T T
Min. Typ.
-50
-
-50
-
-5
-
-
-
-
-
70
-
40
-
-
-
-
-
-
100
-
40
-
0.1
-
1
-
0.1
Max.
-1 -1 240 -0.5 -1.2 -
单元 V V V μA μA
V V MHz pF
μs
测试条件
I = -100μA, I = 0A I = -10mA, I = 0A I = -100μA, I = 0A V = -50 V, I = 0 A V = -5 V, I = 0 A V = -2V, I = -0.5A V = -2V, I = -1.5A I = -1A, I = -50mA I = -1A, I = -50mA V = -2V, I = -500mA V = -10V, I = 0 A, f=1MHz V = -30V I = -I = -0.05A I = -1A

2SC5244中文资料

12Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws andregulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examplesof the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as officeequipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-ucts may directly jeopardize life or harm the human body.– Any applications other than the standard applications intended.(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of MatsushitaElectric Industrial Co., Ltd.M a i n t e n a n D i s c o n t i n u eP le a s ev i s it f o l l o w i n g U R L a b o u t l a t e s t i n fo r mh t t p ://p a n a s o n i c .n e t /s c /e n。

TC4420IJA资料

TC4420TC44296A HIGH-SPEED MOSFET DRIVERSORDERING INFORMATIONTemperaturePart No.LogicPackageRangeTC4420CAT Noninverting 5-Pin TO-2200°C to +70°C TC4420COA Noninverting 8-Pin SOIC 0°C to +70°C TC4420CPA Noninverting 8-Pin PDIP 0°C to +70°C TC4420EOA Noninverting 8-Pin SOIC – 40°C to +85°C TC4420EPA Noninverting 8-Pin PDIP – 40°C to +85°C TC4420IJA Noninverting 8-Pin CerDIP –25°C to +85°C TC4420MJA Noninverting 8-Pin CerDIP – 55°C to +125°C TC4429CAT Inverting 5-Pin TO-2200°C to +70°C TC4429COA Inverting 8-Pin SOIC 0°C to +70°C TC4429CPA Inverting 8-Pin PDIP 0°C to +70°C TC4429EOA Inverting 8-Pin SOIC – 40°C to +85°C TC4429EPA Inverting 8-Pin PDIP – 40°C to +85°C TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C TC4429MJAInverting8-Pin CerDIP – 55°C to +125°CFEATURESs Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Currents Logic Input Will Withstand Negative Swing Up to 5Vs ESD Protected.....................................................4kV s Matched Rise and Fall Times ......................25nsec s High Peak Output Current .........................6A Peak s Wide Operating Range ..........................4.5V to 18V s High Capacitive Load Drive ......................10,000pF s Short Delay Time .................................55nsec Typ.s Logic High Input, Any Voltage .............2.4V to V DD s Low Supply Current With Logic "1" Input...450µA s Low Output Impedance....................................2.5ΩsOutput Voltage Swing to Within 25mV of Ground or V DDAPPLICATIONSs Switch-Mode Power Supplies s Motor Controlss Pulse Transformer Driver sClass D Switching AmplifiersGENERAL DESCRIPTIONThe TC4420/4429 are 6A (peak), single output MOSFET drivers. The TC4429 is an inverting driver (pin-compatible with the TC429), while the TC4420 is a non-inverting driver.These drivers are fabricated in CMOS for lower power, more efficient operation versus bipolar drivers.Both devices have TTL-compatible inputs, which can be driven as high as V DD + 0.3V or as low as – 5V without upset or damage to the device. This eliminates the need for external level shifting circuitry and its associated cost and size. The output swing is rail-to-rail ensuring better drive voltage margin, especially during power up/power down sequencing. Propagational delay time is only 55nsec (typ.)and the output rise and fall times are only 25nsec (typ.) into 2500pF across the usable power supply range.Unlike other drivers, the TC4420/4429 are virtually latch-up proof. They replace three or more discrete compo-nents saving PCB area, parts and improving overall system reliability.FUNCTIONAL BLOCK DIAGRAMPIN CONFIGURATIONS6A HIGH-SPEED MOSFET DRIVERSTC4420TC4429ELECTRICAL CHARACTERISTICS: T A = +25°C with 4.5V ≤ V DD ≤ 18V, unless otherwise specified.SymbolParameterTest Conditions MinTypMaxUnitInput V IH Logic 1 High Input Voltage 2.4 1.8—V V ILLogic 0 Low Input Voltage — 1.30.8V V IN (Max)Input Voltage Range – 5—V DD +0.3V I IN Input Current0V ≤ V IN ≤ V DD– 10—10µA Output V OH High Output Voltage See Figure 1V DD – 0.025——V V OL Low Output VoltageSee Figure 1——0.025V R O Output Resistance, High I OUT = 10 mA, V DD = 18V — 2.1 2.8ΩR O Output Resistance, Low I OUT = 10 mA, V DD = 18V — 1.5 2.5ΩI PK Peak Output Current V DD = 18V (See Figure 5)—6—A I REVLatch-Up ProtectionDuty Cycle ≤ 2% 1.5——AWithstand Reverse Currentt ≤ 300µsecSwitching Time (Note 1)t R Rise Time Figure 1, C L = 2500pF —2535nsec t F Fall Time Figure 1, C L = 2500pF —2535nsec t D1Delay Time Figure 1—5575nsec t D2Delay Time Figure 1—5575nsec Power Supply I S Power Supply Current V IN = 3V —0.45 1.5mA V IN = 0V—55150µA V DDOperating Input Voltage4.5—18VABSOLUTE MAXIMUM RATINGS*Supply Voltage.........................................................+20V Input Voltage...............................................– 5V to > V DD Input Current (V IN > V DD ).........................................50mA Power Dissipation, (T A ≤ 70°C)PDIP ...............................................................730mW SOIC...............................................................470mW CerDIP............................................................800mW 5-Pin TO-220......................................................1.6W Package Power Dissipation, T C ≤ 25°C5-Pin TO-220 (With Heat Sink).........................12.5W Derating Factors (To Ambient)PDIP .............................................................8mW/°C SOIC.............................................................4mW/°C CerDIP.......................................................6.4mW/°C 5-Pin TO-220..............................................12mW/°C Thermal Impedances (To Case)5-Pin TO-220 R θJ-C ......................................................10°C/WStorage Temperature Range ................– 65°C to +150°C Operating Temperature (Chip)..............................+150°C Operating Temperature Range (Ambient)C Version...............................................0°C to +70°C I Version ...........................................– 25°C to +85°C E Version ..........................................– 40°C to +85°C M Version .......................................– 55°C to +125°C Lead Temperature (Soldering, 10 sec).................+300°C*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields.Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.6A HIGH-SPEED MOSFET DRIVERSTC4420TC4429ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ V DD ≤ 18V,unless otherwise specified.SymbolParameterTest Conditions MinTypMaxUnitInput V IH Logic 1 High Input Voltage 2.4——V V ILLogic 0 Low Input Voltage ——0.8V V IN (Max)Input Voltage Range – 5—V DD + 0.3V I IN Input Current0V ≤ V IN ≤ V DD– 10—10µA Output V OH High Output Voltage See Figure 1V DD – 0.025——V V OL Low Output VoltageSee Figure 1——0.025V R O Output Resistance, High I OUT = 10mA, V DD = 18V —35ΩR OOutput Resistance, LowI OUT = 10mA, V DD = 18V —2.35ΩSwitching Time (Note 1)t R Rise Time Figure 1, C L = 2500pF —3260nsec t F Fall Time Figure 1, CL = 2500pF —3460nsec t D1Delay Time Figure 1—50100nsec t D2Delay Time Figure 1—65100nsec Power Supply I S Power Supply Current V IN = 3V —0.453mA V IN = 0V—60400µA V DDOperating Input Voltage4.5—18VNOTE: 1. Switching times guaranteed by design.Figure 1. Switching Time Test Circuit6A HIGH-SPEED MOSFET DRIVERSTC4420TC4429TYPICAL CHARACTERISTICS60402010100010,000CAPACITIVE LOAD (pF)T I M E (n s e c )Fall Time vs. Capacitive Load8010050403020100–60–202060100140T A (°C)D E L A Y T I M E (n s e c )Propagation Delay Timevs. Temperature100100010,000CAPACITIVE LOAD (pF)S U P P L Y C U R R EN T (m A )Supply Current vs. Capacitive Load84705642281465605550454035D E L A Y T I M E (n s e c )4681012141618SUPPLY VOLTAGE (V)Propagation Delay Time vs. Supply Voltaget D2t D160402010100010,000CAPACITIVE LOAD (pF)Rise Time vs. Capacitive Load80100T I M E (n s e c )100100100010,000FREQUENCY (kHz)S U P P L Y C U R R E N T (m A )Supply Current vs. Frequency101000–60–202060100140T A (°C)V (V)DD5791113155040302010T I M E (n s e c )Rise and Fall Times vs. TemperatureV (V)DD120100806040200T I M E (n s e c )Rise Time vs. Supply VoltageT I M E (n s e c )Fall Time vs. Supply Voltage6A HIGH-SPEED MOSFET DRIVERSTC4420TC44292.521.515913V (V)DDLow-State Output ResistanceR ( )ΩO U T711152001601208040D E L A Y T I M E (n s e c )567111315Effect of Input Amplitudeon Propagation Delay89101214V (V)DD567111315Total nA •S Crossover*89101214SUPPLY VOLTAGE (V)5913V (V)DDHigh-State Output ResistanceR ( )ΩO U T 71115The values on this graph representthe loss seen by the driver during one complete cycle. For a single transition, divide the value by 2.*TYPICAL CHARACTERISTICS (Cont.)6A HIGH-SPEED MOSFET DRIVERS TC4420TC44296A HIGH-SPEED MOSFET DRIVERSTC4420TC4429Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authori zed except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec-tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.All rights reserved. © 2001 Microchip Technology Incorporated. 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24C0224C04中文资料

ቤተ መጻሕፍቲ ባይዱ
概述
CAT24WC01/02/04/08/16 是一个 1K/2K/4K/8K/16K 位串行 CMOS E2PROM
128/256/512/1024/2048 个 8 位字节 CATALYST 公司的先进 CMOS 技术实质上减少了器件的功耗 CAT24WC01 有一个 8 字节页写缓冲器 CAT24WC02/04/08/16 有一个 16 字节页写缓冲器该器件通过 I2C 总线接口进行操作有一个专门的写保护功能
目录
1 CSI24WC0 1/02/04/08/16 ……………………………….2-10 2 CSI24WC32/64…………………………………………...11-18 3 CSI24WC128. ……………………………..…………….19-26 4 CSI24WC256. ………………………….….…………….27-34
6
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1 个 CAT24WC16 可单独被系统寻址从器件 8 位地址的最低位作为读写控制位进行读操作 0 表示对从器件进行写操作
1 表示对从器件
图2
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图3 起始/停止时序
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器件寻址
主器件通过发送一个起始信号启动发送过程然后发送它所要寻址的从器件的地址 8 位从器件地址的高 4 位固定为 1010 见图 5 接下来的 3 位 A2 A1 A0 为器件的地址位用来定义哪个器件以及器件的哪个部分被主器件访问上述 8 个 CAT24WC01/02 4 个 CAT24WC04 2 个 CAT24WC08

MIC4420_05中文资料

MIC4420/44296A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS ProcessGeneral DescriptionMIC4420, MIC4429 and MIC429 MOSFET drivers aretough, efﬁcient, and easy to use. The MIC4429 and MIC429 are inverting drivers, while the MIC4420 is a non-inverting driver.They are capable of 6A (peak) output and can drive the larg-est MOSFETs with an improved safe operating margin. The MIC4420/4429/429 accepts any logic input from 2.4V to V S without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5V without damaging the part. Additional circuits protect against damage from electrostatic discharge.MIC4420/4429/429 drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost.Modern BiCMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability insures ad-equate gate voltage to the MOSFET during power up/down sequencing.Note: See MIC4120/4129 for high power and narrow pulse applications.Features• CMOS Construction• Latch-Up Protected: Will Withstand >500mA Reverse Output Current• Logic Input Withstands Negative Swing of Up to 5V • Matched Rise and Fall Times ................................25ns • High Peak Output Current ...............................6A Peak • Wide Operating Range ...............................4.5V to 18V • High Capacitive Load Drive ............................10,000pF • Low Delay Time ..............................................55ns Typ • Logic High Input for Any Voltage From 2.4V to V S• Low Equivalent Input Capacitance (typ) ..................6pF • Low Supply Current ...............450µA With Logic 1 Input • Low Output Impedance .........................................2.5Ω•Output Voltage Swing Within 25mV of Ground or V SApplications• Switch Mode Power Supplies • Motor Controls• Pulse Transformer Driver •Class-D Switching AmpliﬁersFunctional DiagramVMicrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • Ordering InformationPart No. TemperatureStandard Pb-Free Range Package Conﬁguration MIC4420CN MIC4420ZN 0°C to +70°C 8-Pin PDIP Non-Inverting MIC4420BN MIC4420YN –40°C to +85°C 8-Pin PDIP Non-Inverting MIC4420CM MIC4420ZM 0°C to +70°C 8-Pin SOIC Non-Inverting MIC4420BM MIC4420YM –40°C to +85°C 8-Pin SOIC Non-Inverting MIC4420BMM MIC4420YMM –40°C to +85°C 8-Pin MSOP Non-Inverting MIC4420CT MIC4420ZT 0°C to +70°C 5-Pin TO-220 Non-Inverting MIC4429CN MIC4429ZN 0°C to +70°C 8-Pin PDIP Inverting MIC4429BN MIC4429YN –40°C to +85°C 8-Pin PDIP Inverting MIC4429CM MIC4429ZM 0°C to +70°C 8-Pin SOIC Inverting MIC4429BM MIC4429YM –40°C to +85°C 8-Pin SOIC Inverting MIC4429BMM MIC4429YMM –40°C to +85°C 8-Pin MSOP InvertingMIC4429CT MIC4429ZT0°C to +70°C 5-Pin TO-220InvertingPin ConﬁgurationsV S OUT OUT GNDV S IN NC GND Plastic DIP (N) SOIC (M) MSOP (MM)5OUT 4GND 3VS 2GND 1INTO-220-5 (T)Pin DescriptionPin Number Pin Number Pin NamePin Function TO-220-5 DIP, SOIC, MSOP1 2 IN Control Input2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together. 3, TAB 1, 8 V S Supply Input: Duplicate pins must be externally connected together. 5 6, 7 OUT Output: Duplicate pins must be externally connected together.3NCNot connected.Electrical Characteristics: (T A = 25°C with 4.5V ≤ V S ≤ 18V unless otherwise speciﬁed. Note 4.)Symbol ParameterConditionsMinTypMaxUnitsINPUT V IH Logic 1 Input Voltage 2.4 1.4 V V IL Logic 0 Input Voltage 1.1 0.8 V V IN Input Voltage Range–5 V S + 0.3 V I IN Input Current0 V ≤ V IN ≤ V S–1010µAOUTPUT V OH High Output Voltage See Figure 1 V S –0.025V V OL Low Output Voltage See Figure 10.025 V R O Output Resistance, I OUT = 10 mA, V S = 18 V 1.7 2.8 Ω Output Low R O Output Resistance, I OUT = 10 mA, V S = 18 V 1.5 2.5 Ω Output High I PK Peak Output Current V S = 18 V (See Figure 6) 6 A I R Latch-Up Protection>500mAWithstand Reverse CurrentSWITCHING TIME (Note 3)t R Rise Time Test Figure 1, C L = 2500 pF 12 35 ns t F Fall Time Test Figure 1, C L = 2500 pF 13 35 ns t D1 Delay Time Test Figure 1 18 75 ns t D2 Delay TimeTest Figure 1 48 75 ns POWER SUPPLYI S Power Supply Current V IN = 3 V 0.45 1.5 mAV IN = 0 V 90 150 µA V SOperating Input Voltage4.518VAbsolute Maximum Ratings (Notes 1, 2 and 3)Supply Voltage (20V)Input Voltage ...............................V S + 0.3V to GND – 5V Input Current (V IN > V S ) ..........................................50mA Power Dissipation, T A ≤ 25°CPDIP ....................................................................960W SOIC ...............................................................1040mW 5-Pin TO-220 ...........................................................2W Power Dissipation, T C ≤ 25°C5-Pin TO-220 ......................................................12.5W Derating Factors (to Ambient)PDIP .............................................................7.7mW/°C SOIC .............................................................8.3mW/°C 5-Pin TO-220 .................................................17mW/°C Storage Temperature .............................–65°C to +150°C Lead Temperature (10 sec.) ...................................300°COperating RatingsSupply Voltage ..............................................4.5V to 18V Junction Temperature .............................................150°C Ambient TemperatureC Version .................................................0°C to +70°C B Version .............................................–40°C to +85°C Package Thermal Resistance 5-pin TO-220 (θJC ) ............................................10°C/W 8-pin MSOP (θJA ) ...........................................250°C/W90%10%10%0V5V V S OUTPUTINPUT90%0VFigure 1. Inverting Driver Switching Time90%10%10%0V5V V S OUTPUTINPUT90%0VFigure 2. Noninverting Driver Switching Time Test CircuitsElectrical Characteristics: (T A = –55°C to +125°C with 4.5V ≤ V S ≤ 18V unless otherwise speciﬁed.)Symbol ParameterConditionsMinTypMax Units INPUT V IH Logic 1 Input Voltage 2.4 V V IL Logic 0 Input Voltage 0.8 V V IN Input Voltage Range–5 V S + 0.3 V I IN Input Current0V ≤ V IN ≤ V S–1010 µA OUTPUT V OH High Output Voltage Figure 1 V S –0.025V V OL Low Output Voltage Figure 10.025 V R OOutput Resistance, I OUT = 10mA, V S = 18V 3 5 Ω Output Low R O Output Resistance, I OUT = 10mA, V S = 18V2.35ΩOutput High SWITCHING TIME (Note 3)t R Rise Time Figure 1, C L = 2500pF 32 60 ns t F Fall Time Figure 1, C L = 2500pF 34 60 ns t D1 Delay Time Figure 1 50 100 ns t D2 Delay TimeFigure 1 65 100 ns POWER SUPPLYI S Power Supply Current V IN = 3V 0.45 3.0 mAV IN = 0V 0.06 0.4 mA V S Operating Input Voltage4.518VNote 1: Functional operation above the absolute maximum stress ratings is not implied.Note 2: Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to prevent damage from static discharge.Note 3: Switching times guaranteed by design.Note 4:Speciﬁcation for packaged product only.Typical Characteristic Curves3020105100010,000CAPACITIVE LOAD (pF )T I M E (n s )4050605040302010–60–202060100140TEMPER ATURE (°C )T I M E (n s )Propagation Delay Timevs.Temperature100100010,000CAPACITIVE LOAD (pF )I – S U P P L Y C U R R E N T (m A )S Supply Current vs. Capacitive Load8470564228140605040302010D E L A Y T I M E (n s )4681012141618SUPPLY VOLTAGE (V)Delay Time vs. Supply Voltaget D2t D13020105100010,000CAPACITIVE LOAD (pF )4050T I M E (n s )10000100100010,000FREQUENC Y (kHz)S U P P L Y C U R R E N T (m A )Supply Current vs. Frequency101000–60–202060100140TEMPER ATURE (°C )V (V)S5791113152520151050T I M E (n s )Rise and Fall Times vs.Temperature6050403020100T I M E (n s )Rise Time vs. Supply VoltageT I M E (n s )Fall Time vs. Supply Voltage50403020100V (V)S30003000Typical Characteristic Curves (Cont.)2.521.515913V (V)SR ( )W O U T 7111510008006004002000SUPPLY VOLTAGE (V)900800700600500400–60–202060100140TEMPERATURE (°C)Quiescent Power Supply Current vs.TemperatureS U P P L Y C U R R E N T (A )48121620S U P P L Y C U R R E N T (A )Quiescent Power SupplyVoltage vs. Supply Current5913V (V)SHigh-State Output ResistanceR ( )W O U T 71115D E L A Y (n s )567111315Effect of Input Amplitudeon Propagation Delay89101214V (V)S2.01.51.00.5C R O S S O V E R A R E A (A •s ) x 10-8567111315Crossover Area vs. Supply Voltage89101214SUPPLY VOLTAGE V (V)SApplications InformationSupply BypassingCharging and discharging large capacitive loads quickly requires large currents. For example, charging a 2500pF load to 18V in 25ns requires a 1.8 A current from the device power supply.The MIC4420/4429 has double bonding on the supply pins, the ground pins and output pins This reduces parasitic lead inductance. Low inductance enables large currents to be switched rapidly. It also reduces internal ringing that can cause voltage breakdown when the driver is operated at or near the maximum rated voltage.Internal ringing can also cause output oscillation due to feedback. This feedback is added to the input signal since it is referenced to the same ground.To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low inductance ceramic disk capacitors with short lead lengths (< 0.5 inch) should be used. A 1µF low ESR ﬁlm capacitor in parallel with two 0.1 µF low ESR ceramic capacitors, (such as A VX RAM GUARD®), provides adequate bypassing. Connect one ceramic capacitor di-rectly between pins 1 and 4. Connect the second ceramic capacitor directly between pins 8 and 5.GroundingThe high current capability of the MIC4420/4429 demands careful PC board layout for best performance Since the MIC4429 is an inverting driver, any ground lead impedance will appear as negative feedback which can degrade switch-ing speed. Feedback is especially noticeable with slow-rise time inputs. The MIC4429 input structure includes 300mV of hysteresis to ensure clean transitions and freedom from oscillation, but attention to layout is still recommended. Figure 3 shows the feedback effect in detail. A s the MIC4429 input begins to go positive, the output goes negative and several amperes of current ﬂow in the ground lead. As little as 0.05Ω of PC trace resistance can produce hundreds of millivolts at the MIC4429 ground pins. If the driving logic is referenced to power ground, the effective logic input level is reduced and oscillation may result.To insure optimum performance, separate ground traces should be provided for the logic and power connections. Connecting the logic ground directly to the MIC4429 GND pins will ensure full logic drive to the input and ensure fast output switching. Both of the MIC4429 GND pins should, however, still be connected to power ground.Figure 3. Self-Contained Voltage DoublerTable 1: MIC4429 MaximumOperating FrequencyV S Max Frequency18V 500kHz 15V 700kHz10V 1.6MHzConditions: 1. DIP Package (θJA = 130°C/W) 2. T A = 25°C3. C L = 2500pFInput StageThe input voltage level of the 4429 changes the quiescentsupply current. The N channel MOSFET input stage tran-sistor drives a 450µA current source load. With a logic “1” input, the maximum quiescent supply current is 450µA. Logic “0” input level signals reduce quiescent current to 55µA maximum.The MIC4420/4429 input is designed to provide 300mV of hysteresis. This provides clean transitions, reduces noise sensitivity, and minimizes output stage current spiking when changing states. Input voltage threshold level is approxi-mately 1.5V, making the device TTL compatible over the 4 .5V to 18V operating supply voltage range. Input current is less than 10µA over this range.The MIC4429 can be directly driven by the TL494, SG1526/1527, SG1524, TSC170, MIC38HC42 and similar switch mode power supply integrated circuits. By ofﬂoading the power-driving duties to the MIC4420/4429, the power supply controller can operate at lower dissipation. This can improve performance and reliability.The input can be greater than the +VS supply, however,current will ﬂow into the input lead. The propagation delay for T D2 will increase to as much as 400ns at room tem-perature. The input currents can be as high as 30mA p-p (6.4mA RMS ) with the input, 6 V greater than the supply voltage. No damage will occur to MIC4420/4429 however, and it will not latch.The input appears as a 7pF capacitance, and does not change even if the input is driven from an AC source. Care should be taken so that the input does not go more than 5volts below the negative rail.Power DissipationCMOS circuits usually permit the user to ignore power dis-sipation. Logic families such as 4000 and 74C have outputs which can only supply a few milliamperes of current, and even shorting outputs to ground will not force enough cur-rent to destroy the device. The MIC4420/4429 on the other hand, can source or sink several amperes and drive large capacitive loads at high frequency. The package power dissipation limit can easily be exceeded. Therefore, someattention should be given to power dissipation when driving low impedance loads and/or operating at high frequency.The supply current vs frequency and supply current vs capacitive load characteristic curves aid in determining power dissipation calculations. Table 1 lists the maximum safe operating frequency for several power supply volt-ages when driving a 2500pF load. More accurate power dissipation ﬁgures can be obtained by summing the three dissipation sources.Given the power dissipation in the device, and the thermal resistance of the package, junction operating temperature for any ambient is easy to calculate. For example, the thermal resistance of the 8-pin MSOP package, from the data sheet, is 250°C/W. In a 25°C ambient, then, using a maximum junction temperature of 150°C, this package will dissipate 500mW.Accurate power dissipation numbers can be obtained by summing the three sources of power dissipation in the device:• Load Power Dissipation (P L )• Quiescent power dissipation (P Q )• Transition power dissipation (P T )Calculation of load power dissipation differs depending on whether the load is capacitive, resistive or inductive.Resistive Load Power DissipationDissipation caused by a resistive load can be calculated as:P L = I 2 R O D where:I = the current drawn by the loadR O = the output resistance of the driver when the output is high, at the power supply voltage used. (See data sheet)D = fraction of time the load is conducting (duty cycle)Figure 4. Switching Time Degradation Due toNegative Feedbackwhere: I H = quiescent current with input high I L = quiescent current with input lowD = fraction of time input is high (duty cycle)V S =power supply voltageTransition Power DissipationTransition power is dissipated in the driver each time its output changes state, because during the transition, for a very brief interval, both the N- and P-channel MOSFETs in the output totem-pole are ON simultaneously, and a cur-rent is conducted through them from V +S to ground. The transition power dissipation is approximately:P T = 2 f V S (A•s)where (A•s) is a time-current factor derived from the typical characteristic curves.Total power (P D ) then, as previously described is: P D = P L + P Q +P TDeﬁnitionsC L = Load Capacitance in Farads.D = Duty Cycle expressed as the fraction of time theinput to the driver is high. f = Operating Frequency of the driver in Hertz I H = Power supply current drawn by a driver when bothinputs are high and neither output is loaded. I L = Power supply current drawn by a driver when bothinputs are low and neither output is loaded. I D = Output current from a driver in Amps. P D = Total power dissipated in a driver in Watts. P L = Power dissipated in the driver due to the driver’sload in Watts. P Q = Power dissipated in a quiescent driver inWatts.P T = Power dissipated in a driver when the outputchanges states (“shoot-through current”) in Watts. NOTE: The “shoot-through” current from a dual transition (once up, once down) for both drivers is shown by the "Typical Characteristic Curve : Crossover Area vs. Supply Voltage and is in am-pere-seconds. This ﬁgure must be multiplied by the number of repetitions per second (frequency) to ﬁnd Watts. R O = Output resistance of a driver in Ohms.V S = Power supply voltage to the IC in Volts.Capacitive Load Power DissipationDissipation caused by a capacitive load is simply the en-ergy placed in, or removed from, the load capacitance bythe driver. The energy stored in a capacitor is described by the equation:E = 1/2 C V 2As this energy is lost in the driver each time the load is charged or discharged, for power dissipation calculations the 1/2 is removed. This equation also shows that it is good practice not to place more voltage on the capacitor than is necessary, as dissipation increases as the square of the voltage applied to the capacitor. For a driver with a capacitive load: P L = f C (V S )2where:f = O perating Frequency C = L oad CapacitanceV S =D river Supply Voltage Inductive Load Power DissipationFor inductive loads the situation is more complicated. For the part of the cycle in which the driver is actively forcing current into the inductor, the situation is the same as it is in the resistive case:P L1 = I 2 R O DHowever, in this instance the R O required may be either the on resistance of the driver when its output is in the high state, or its on resistance when the driver is in the low state, depending on how the inductor is connected, and this is still only half the story. For the part of the cycle when the inductor is forcing current through the driver, dissipation is best described asP L2 = I V D (1-D)where V D is the forward drop of the clamp diode in the driver (generally around 0.7V). The two parts of the load dissipation must be summed in to produce P LP L = P L1 + P L2Quiescent Power DissipationQuiescent power dissipation (P Q , as described in the input section) depends on whether the input is high or low. A low input will result in a maximum current drain (per driver) of ≤0.2mA; a logic high will result in a current drain of ≤2.0mA. Quiescent power can therefore be found from:P Q = V S [D I H + (1-D) I L ]5.0V 0V18V0VFigure 5. Peak Output Current Test CircuitJuly 2005 11M9999-072205MIC4420/4429Micrel, Inc.Package Information0.380 (9.65)0.370 (9.40)PIN 1DIMENSIONS:INCH (MM)8-Pin Plastic DIP (N)8-Pin SOIC (M)元器件交易网元器件交易网MIC4420/4429 Micrel, Inc.8-Pin MSOP (MM)Dimensions:(mm)5-Lead TO-220 (T)MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USATEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use. Micrel reserves the right to change circuitry and speciﬁcations at any time without notiﬁcation to the customer.Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a signiﬁcant injury to the user. A Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaseragrees to fully indemnify Micrel for any damages resulting from such use or sale.© 2001 Micrel, Inc.M9999-07220512 July 2005。

2SC2412中文资料

2SC2412中文资料Transistors 2SC5658 / 2SC1740SGeneral purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /2SC1740S!Features 1) Low Cob.Cob=2.0pF (Typ.)2) Complements the 2SA1037AK /2SA1576A / 2SA1774H /2SA2029 / 2SA933AS.!StructureEpitaxial planar type NPN silicon transistor!External dimensions (Units : mm)* Denotes h FE!Absolute maximum (T a=25°C)Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector powerdissipationJunction temperature Storage temperatureParameterV CBO V CEO V EBO P CTj Tstg60V V V AW °C °C 5070.15I C0.20.150.32SC2412K, 2SC40812SC1740S 2SC4617, 2SC5658150?55~+150Symbol Limits UnitTransistors 2SC5658 / 2SC1740S!Electrical characteristics (T a=25°C)Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitanceParameterSymbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)f T CobMin.60507??12018020.10.15600.4?3.5V I C =50μA I C =1mA IE =50μA V CB =60V V EB =7VV CE =6V, I C =1mA I C /I B =50mA/5mAV CE =12V, I E =?2mA, f=100MHz V CE =12V, I E =0A, f=1MHzV V μA μA ?V MHz pFTyp.Max.Unit ConditionsTransition frequency !Packaging specifications and h FEh FE values are classified as follows :Item Q R S h FE120~270180~390270~560!Electrical characterristic curvesFig.1 Grounded emitter propagation characteristics C O L L E C T O R C U R R E N T : I C (m A )BASE TO EMITTER VOLTAGE : V BE (V)Fig.2 Grounded emitter output characteristics ( Ι )C O L L E C T O R C U R R E N T : I C (m A ) COLLECTOR TO EMITTER VOLTAGE : V CE (V) C O L L E C T O R C U R R E N T : I C (m A ) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ )Transistors2SC5658 / 2SC1740SFig.4 DC current gain vs. collector current ( Ι )D C C U R RE N T G A I N: h F ECOLLECTOR CURRENT : I C (mA) Fig.5 DC current gain vs.collector current ( ΙΙ )D C C U R R E N T G A I N : h F ECOLLECTOR CURRENT : I C (mA)Fig. 6 Collector-emitter saturationvoltage vs. collector currentC O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA) Fig.8 Collector-emitter saturationvoltage vs. collector current (ΙΙ)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.9 Gain bandwidth product vs.emitter currentEMITTER CURRENT : I E (mA)T R A N S I T I O N F R E Q U E N C Y : f T (M H z )Fig.10 Collector output capacitance vs.collector-base voltageEmitter input capacitance vs.emitter-base voltageCOLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)C O L L E C T O R O U T P U T C A P A CI T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )Fig.11 Base-collector time constantvs. emitter currentB A S EC O L L E C T O R T I M E C O N S T A N T : C c ·r b b (p s )EMITTER CURRENT : I E (mA)。