SD5000I-2中文资料

Document Number: 70296N-Channel Lateral DMOS FETs (Available Only In Extended Hi-Rel Flow)FEATURES BENEFITS APPLICATIONSD Quad SPST Switch with Zener Input Protection D Low Interelectrode Capacitance and Leakage D Ultra-High Speed Switching—t ON: 1 nsD Ultra-Low Reverse Capacitance: 0.2 pFD Low Guaranteed r DS @ 5 VD Low Turn-On Threshold Voltage D High-Speed System PerformanceD Low Insertion Loss at HighFrequenciesD Low Transfer Signal LossD Simple Driver RequirementD Single Supply OperationD Fast Analog SwitchD Fast Sample-and-HoldsD Pixel-Rate SwitchingD Video SwitchD MultiplexerD DAC DeglitchersD High-Speed DriverDESCRIPTIONThe SD5000I-2 monolithic switch features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. This bidirectional device provides low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk.Built on Vishay Siliconix’ proprietary DMOS process, the SD5000I-2 utilizes lateral construction to achieve low capacitance and ultra-fast switching speeds. For manufacturing reliability, these devices feature poly-silicon gates protected by Zener diodes.The SD5000I is available only in the “–2” extended hi-rel flow. The Vishay Siliconix “–2” flow complies with the requirements of MIL-PRF-19500 for JANTX discrete devices.S2S1 SUBSTRA TE NC G2G1D2D1D3 G3 S3D4G4S4 Dual-In-LineTop ViewApplications Information—See Applications Note AN502ABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)Gate-Drain, Gate-Source Voltage +30 V/–25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Substrate Voltage +30 V/–0.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain-Source Voltage 20 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain-Source-Substrate Voltage 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain Current 50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 seconds)300_C. . . . . . . . . . . . . . Storage Temperature –65 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150_C . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation a, b :(Package)500 mW . . . . . . . . . . . . . . . . . . . . . . . . . . (Each Device)300 mW. . . . . . . . . . . . . . . . . . . . . . . Notes:a.Derate 4 mW/_C above 25_CNotes:a.T A = 25_C unless otherwise noted.DMCAb. B is is the body (substrate) and V (BR) is breakdown.c.Typical values are for DESIGN AID ONLY , not guaranteed nor subject to production testing.Document Number: 70296On-Resistance vs. Gate-Source Voltage30024018060120110010100–606020–20100140806040200T A – Temperature (_C)I D – Drain Current (mA)Leakage Current vs. Applied Voltage– O n -R e s i s t a n c e (r D S (o n )W )– O n -R e s i s t a n c e (r D S (o n )W )Threshold Voltage vs. Substrate-Source VoltageLeakage Current vs. Temperature5–4–2043210100101255075100125T A – Temperature (_C)–8–12–16– G a t e -S o u r c e T h r e s h o l d V o l t a g e (V )V G S (t h )L e a k a g e (n A )V BS – Body-Source Voltage (V)Body Leakage Current vs. Drain-Body Voltage12168420– B o d y L e a k a g eI B V BS – Body-Source Voltage (V)Input AdmittanceForward AdmittanceCapacitance vs. Gate-Source Voltage104208642C a p a c i t a n c e (p F )1001010.11001000(m S )1001010.11001000(m S )VGS – Gate-Source Voltage (V)f – Frequency (MHz) f – Frequency (MHz)81216200500200500100 m A 100 nA 1 nA100 pA 1 pA10 m A1 m A 10 nA 10 pA Reverse AdmittanceOutput Admittance10.10.010.0011001000(m S )1001010.11001000(m S )f – Frequency (MHz)f – Frequency (MHz)200500200500Document Number: 70296Output Conductance vs. Drain Current7006005000017400300200100256t f – Fall Time (ns)R L (50420403020101.02040.80.60.40.2V DS – Drain-Source Voltage (V)I D – Drain Current (mA)– D r a i n C u r r e n t (m A )I D 8121681216Threshold Voltage vs. Temperature5–606010020–2014043210T A – Temperature (_C)g o s – O u t p u t C o n d u c t a n c e (m S )– G a t e -S o u r c e T h re s h o l d V o l t a g e (V )V G S (t h ))W V To Scope+V DDOUT0 V+5 V0 V+V DD V INV OUT W。