4N60规格书

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迈尔斯通 MST 产品选型手册说明书

专业集成IC 设计公司公司简介无锡迈尔斯通集成电路有限公司（简称MST）是国内著名上市企业“浙江钱江摩托股份有限公司”与美国归国博士陈俊于2012年共同出资成立的IC设计公司。

公司创始人及团队领袖陈俊博士，曾在TI位于美国Dallas的设计中心工作十余年，具有丰富的IC设计经验，曾获得11项美国专利、4项中国专利、发表了20余篇IEEE论文。

2009年在美国成立奥马微电子，联合十多名美国优秀合约专家，为TI、Diodes等国家一线IC厂商提供合约设计服务，也为MST提供了坚实的技术保障。

用芯创造美好未来企业宗旨：高标准的创新设计造就高品质的产品公司愿景：芯系世界，共荣未来，成为一流的集成电路设计公司团队理念：诚信、高效、创新、超越创新理念：专注研发，持续创新，积极实践合作理念：为每一位客户提供满意的产品和服务产品分类低压差线性稳压芯片（LDO）产品特点：1.压差可低至30mV (I OUT =10mA)；2.静态电流低至1.6µA；3.输出电压范围有1.8V,2.5V,3.3V,3.6V,4.0V,4.2V,5.0V；4.采用典型的SOT23,SOT89封装；5.输入耐压最高可达80V。

应用领域：1.蓝牙音箱、行车记录仪2.玩具的供电系统3.无绳电话设备4.照相机5.基准电压源6.便携式计算机7.智能电表8.安防监控设备产品型号I Q VINV DROP I OUT (MAX)V OUT (FIX)带EN 引脚封装形式MST52LXXBTE 3uA (Vin+Vdrop)V---24V 500mV@100mA 200mA 1.8V±2%2.5V±2%2.8V±2%3.0V±2%3.3V±2%3.6V±2%4.0V±2%4.2V±2%5.0V±2%NOMST52LXXBTS 3uA (Vin+Vdrop)V---24V 500mV@100mA 200mA NO MST52LXXBTG 3uA (Vin+Vdrop)V---24V 500mV@100mA 200mA NO MST53XXBTE 1.6uA (Vin+Vdrop)V---35V 300mV@100mA 300mA1.8V±2%3.0V±2%3.3V±2%3.6V±2%5.0V±2%NO MST53XXBTS 1.6uA (Vin+Vdrop)V---35V 300mV@100mA 300mA NOMST53XXBTG 1.6uA (Vin+Vdrop)V---35V 300mV@100mA 300mA NO MST54XXBTE 2uA (Vin+Vdrop)V---45V 350mV@100mA 350mA 1.8V±2%3.0V±2%3.3V±2%5.0V±2%NO MST54XXBTS 2uA (Vin+Vdrop)V---45V 350mV@100mA 350mA NO MST54XXBTG 2uA (Vin+Vdrop)V---45V 350mV@100mA 350mA YES MST56XXBTE 2uA (Vin+Vdrop)V---60V 700mV@100mA 200mA 3.0V±2%3.3V±2%3.6V±2%5.0V±2%NO MST56XXBTS 2uA (Vin+Vdrop)V---60V 700mV@100mA 200mA NO MST56XXBTG2uA(Vin+Vdrop)V---60V700mV@100mA200mAYES 蓝牙音箱行车记录仪智能水表无绳电话设备同步整流芯片（Synchronous Rectifier Chip）产品型号产品名称I QIOPPowerMOS最大开关频率封装形式BV DSSRDS（ON）MST1691TG 同步整流控制器400uA 4mA 外置MOS 外置MOS 100KHz MST1692KC 同步整流管（替代二极管）400uA 4mA 60V 20mΩ100KHz MST1694KC 100VCCM 同步整流(下端)400uA 4mA 100V 20mΩ100KHz MST1696KC100VCCM 同步整流(上端)400uA4mA100V20mΩ100KHz 产品特点:1.用于反激转换器，兼容DCM 或准谐振模式；2.最大100KHz 开关频率；3.可选集成100V、20mΩMOS 管或单独控制器；4.可显著减少发热，提升系统效率。

4N60F PDF规格书

Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Ths)
ID% Normalised Current Derating
with heatsink compound
Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
ID, Drain current (Amps) Tj = 25 C 7V PHP3N60 10 V 6V 5.5 V 5V VGS = 4.5 V
120 110 100 90 80 70 60 50 40 30 20 10 0
12 10 8 6 4 2 0
0
20
40
60
80 Ths / C
100
120
140
0
5
10 15 20 25 VDS, Drain-Source voltage (Volts)
30
Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Ths); conditions: VGS ≥ 10 V
φ
3.
18
2.54 ±0.20 0.70 ±0.20
15.87 ±0.20
3.30 ±0.20
12.42 ±0.20
6.68 ±0.20
2.76 ±0.20
9.75 ±0.20
1.47max
D
0.50 ±0.20
1
2.54typ 2.54typ
2 3
0.80 ±0.20
G

SKP04N60参数资料

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode• 75% lower E off compared to previous generationcombined with low conduction losses• Short circuit withstand time – 10 µs • Designed for:- Motor controls - Inverter• NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviour - parallel switching capability• Very soft, fast recovery anti-parallel EmCon diode• Complete product spectrum and PSpice Models : /igbt/Type V CE I C V CE(sat )T j Package Ordering Code SKP04N60600V4A2.3V150°CTO-220AB Q67040-S4216SKB04N60TO-263ABQ67040-S4229Maximum Ratings ParameterSymbol Value Unit Collector-emitter voltage V C E 600V DC collector current T C = 25°C T C = 100°CI C9.44.9Pulsed collector current, t p limited by T jmax I C p u l s 19Turn off safe operating area V CE ≤ 600V, T j ≤ 150°C -19Diode forward current T C = 25°C T C = 100°CI F104Diode pulsed current, t p limited by T jmax I F p u l s 19AGate-emitter voltage V G E ±20V Short circuit withstand time 1)V GE = 15V, V CC ≤ 600V, T j ≤ 150°Ct S C 10µs Power dissipation T C = 25°CP t o t50WOperating junction and storage temperatureT j , T s t g-55...+150°C1)Allowed number of short circuits: <1000; time between short circuits: >1s.P-TO-220-3-1(TO-220AB)P-TO-263-3-2 (D²-PAK)(TO-263AB)Thermal Resistance Parameter Symbol Conditions Max. ValueUnit CharacteristicIGBT thermal resistance,junction – caseR t h J C 2.5Diode thermal resistance,junction – case R t h J C D 4.5Thermal resistance,junction – ambientR t h J A TO-220AB 62SMD version, device on PCB1)R t h J ATO-263AB40K/WElectrical Characteristic, at T j = 25 °C, unless otherwise specified ValueParameterSymbol Conditionsmin.Typ.max.UnitStatic CharacteristicCollector-emitter breakdown voltage V (B R )C E S V G E =0V, I C =500µA 600--Collector-emitter saturation voltageV C E (s a t )V G E = 15V, I C =4A T j =25°C T j =150°C1.7-2.02.3 2.42.8Diode forward voltageV FV G E =0V, I F =4A T j =25°C T j =150°C1.2- 1.41.25 1.81.65Gate-emitter threshold voltage V G E (t h )I C =200µA,V C E =V G E 345VZero gate voltage collector currentI C E SV C E =600V,V G E =0V T j =25°C T j =150°C----20500µAGate-emitter leakage current I G E S V C E =0V,V G E =20V --100nA Transconductance g f s V C E =20V, I C =4A 3.1-S Dynamic Characteristic Input capacitance C i s s -264317Output capacitanceC o s s -2935Reverse transfer capacitance C r s s V C E =25V,V G E =0V,f =1MHz-1720pFGate chargeQ G a t e V C C =480V, I C =4A V G E =15V -2431nC Internal emitter inductancemeasured 5mm (0.197 in.) from case L E TO-220AB-7-nH Short circuit collector current2)I C (S C )V G E =15V,t S C ≤10µs V C C ≤ 600V,T j ≤ 150°C-40-A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2(one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air.2)Allowed number of short circuits: <1000; time between short circuits: >1s.Switching Characteristic, Inductive Load, at T j =25 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2226Rise timet r -1518Turn-off delay time t d (o f f )-237284Fall time t f -7084nsTurn-on energy E o n -0.0700.081Turn-off energy E o f f -0.0610.079Total switching energyE t sT j =25°C,V C C =400V,I C =4A,V G E =0/15V,R G =67Ω,L σ1)=180nH,C σ1)=180pFEnergy losses include “tail” and diode reverse recovery.-0.1310.160mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---18015165---nsDiode reverse recovery charge Q r r -130-nC Diode peak reverse recovery current I r r m - 2.5-A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =25°C,V R =200V, I F =4A,di F /dt =200A/µs-180-A/µs Switching Characteristic, Inductive Load, at T j =150 °C ValueParameterSymbolConditionsmin.typ.max.UnitIGBT Characteristic Turn-on delay time t d (o n )-2226Rise timet r -1619Turn-off delay time t d (o f f )-264317Fall time t f -104125nsTurn-on energy E o n -0.1150.132Turn-off energy E o f f -0.1110.144Total switching energyE t sT j =150°CV C C =400V,I C =4A,V G E =0/15V,R G =67Ω,L σ1)=180nH,C σ1)=180pFEnergy losses include “tail” and diode reverse recovery.-0.2260.277mJ Anti-Parallel Diode Characteristic Diode reverse recovery timet r r t S t F---23023227---nsDiode reverse recovery charge Q r r -300-nC Diode peak reverse recovery current I r r m -4-A Diode peak rate of fall of reverse recovery current during t bdi r r /dtT j =150°C V R =200V, I F =4A,di F /dt =200A/µs-200-A/µs 1)Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.I C , C O L L E C T O R C U R R E N T10Hz100Hz 1kHz 10kHz 100kHz0A 10A20AI C , C O L L E C T O R C U R R E N T1V10V100V1000V0.01A0.1A1A10Af , SWITCHING FREQUENCYV CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency(T j ≤ 150°C, D = 0.5, V CE = 400V,V GE = 0/+15V, R G = 67Ω)Figure 2. Safe operating area (D = 0, T C = 25°C, T j ≤ 150°C)P t o t , P O W E R D I S S I P A T I O N25°C50°C 75°C 100°C 125°C0W 10W20W30W40W50W60WI C , C O L L E C T O R C U R R E N T25°C50°C 75°C 100°C 125°C0A2A4A6A8A10A12AT C , CASE TEMPERATURET C , CASE TEMPERATUREFigure 3. Power dissipation as a function of case temperature (T j ≤ 150°C)Figure 4. Collector current as a function of case temperature(V GE ≤ 15V, T j ≤ 150°C)I C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V0A 3A 6A 9A12A 15AI C , C O L L E C T O R C U R R E N T0V1V 2V 3V 4V 5V0A 3A6A9A12A15AV CE , COLLECTOR -EMITTER VOLTAGEV CE , COLLECTOR -EMITTER VOLTAGEFigure 5. Typical output characteristics (T j = 25°C)Figure 6. Typical output characteristics (T j = 150°C)I C , C O L L E C T O R C U R R E N T0V2V 4V 6V 8V 10V0A 2A 4A 6A 8A 10A 12A14A V C E (s a t ), C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E-50°C 0°C 50°C 100°C 150°C1.0V1.5V2.0V2.5V3.0V3.5V4.0VV GE , GATE -EMITTER VOLTAGET j , JUNCTION TEMPERATUREFigure 7. Typical transfer characteristics(V CE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction temperature (V GE = 15V)t , S W I T C H I N G T I M E S0A2A4A6A8A10A10ns100nst , S W I T C H I N G T I M E S0Ω50Ω100Ω150Ω200Ω10ns 100nsI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 9. Typical switching times as a function of collector current(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 67Ω,Dynamic test circuit in Figure E)Figure 10. Typical switching times as a function of gate resistor(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C = 4A,Dynamic test circuit in Figure E)t , S W I T C H I N G T I M E S0°C50°C100°C150°C10ns100nsV G E (t h ), G A T E -E M I T T E R T H R E S H O L D V O L T A G E-50°C0°C50°C100°C150°C 2.0V2.5V3.0V 3.5V4.0V 4.5V5.0V 5.5VT j , JUNCTION TEMPERATURET j , JUNCTION TEMPERATUREFigure 11. Typical switching times as a function of junction temperature(inductive load, V CE = 400V, V GE = 0/+15V,I C = 4A, R G = 67Ω,Dynamic test circuit in Figure E)Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I C = 0.2mA)E , S W I T C H I N G E N E R G Y L O S S E S0A2A 4A 6A 8A 10A0.0mJ0.1mJ0.2mJ0.3mJ0.4mJ0.5mJ0.6mJE , SW I T C H I N G E N E R G Y L O S S E S0Ω50Ω100Ω150Ω200Ω0.0mJ0.1mJ0.2mJ0.3mJ0.4mJI C , COLLECTOR CURRENTR G , GATE RESISTORFigure 13. Typical switching energy losses as a function of collector current(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, R G = 67Ω,Dynamic test circuit in Figure E)Figure 14. Typical switching energy losses as a function of gate resistor(inductive load, T j = 150°C, V CE = 400V,V GE = 0/+15V, I C = 4A,Dynamic test circuit in Figure E)E ,S W I T C H I N G E N E R G Y L O S S E S0°C50°C 100°C 150°C0.0mJ0.1mJ0.2mJ0.3mJZ t h J C , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs 100µs 1ms 10ms 100ms 1s10-310-210-1100T j , JUNCTION TEMPERATUREt p , PULSE WIDTHFigure 15. Typical switching energy losses as a function of junction temperature (inductive load, V CE = 400V, V GE = 0/+15V,I C = 4A, R G = 67Ω,Dynamic test circuit in Figure E)Figure 16. IGBT transient thermalimpedance as a function of pulse width (D = t p / T )V G E , G A T E -E M I T T E R V O L T A G E0nC10nC 20nC 30nC 0V 5V10V15V20V25VC , C A P A C I T A N C E0V 10V 20V 30V10pF100pFQ GE , GATE CHARGEV CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge (I C = 4A)Figure 18. Typical capacitance as a function of collector-emitter voltage (V GE = 0V, f = 1MHz)t s c , S H O R T C I R C U I T W I T H S T A N D T I M E10V11V12V13V14V15V0µs 5µs10µs15µs20µs25µs I C (s c ), S H O R T C I R C U I T C O L L E C T O R C U R R E N T10V12V 14V 16V 18V20V0A 10A 20A 30A 40A 50A 60A 70AV GE , GATE -EMITTER VOLTAGEV GE , GATE -EMITTER VOLTAGEFigure 19. Short circuit withstand time as a function of gate-emitter voltage (V CE = 600V, start at T j = 25°C)Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V CE ≤ 600V, T j = 150°C)t r r , R E V E R S E R E C O V E R Y T I M E40A/µs120A/µs 200A/µs 280A/µs 360A/µs0ns100ns200ns300ns400ns500nsQ r r , R E V E R S E R E C O V E R Y C H A R G E40A/µs120A/µs 200A/µs 280A/µs 360A/µs0nC80nC160nC240nC320nC400nC480nC560nCdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 21. Typical reverse recovery time as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)Figure 22. Typical reverse recovery charge as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)I r r , R E V E R S E R E C O V E R Y C U R R E N T40A/µs120A/µs 200A/µs 280A/µs360A/µs0A2A4A6A8Ad i r r /d t , D I O D E P E A K R A T E O F F A L LO F R E V E R S E R E C O V E R Y C U R R E N T40A/µs120A/µs 200A/µs 280A/µs 360A/µs0A/µs80A/µs160A/µs240A/µs320A/µs400A/µsdi F /dt , DIODE CURRENT SLOPEdi F /dt , DIODE CURRENT SLOPEFigure 23. Typical reverse recovery current as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V R = 200V, T j = 125°C,Dynamic test circuit in Figure E)I F , F O R W A R D C U R R E N T0.0V0.5V 1.0V 1.5V 2.0V0A 2A4A6A8AV F , F O R W A R D V O L T A G E-40°C 0°C 40°C 80°C 120°C1.0V1.5V2.0VV F , FORWARD VOLTAGET j , JUNCTION TEMPERATUREFigure 25. Typical diode forward current as a function of forward voltage Figure 26. Typical diode forward voltage as a function of junction temperatureZ t h J C D , T R A N S I E N T T H E R M A L I M P E D A N C E1µs10µs 100µs 1ms 10ms 100ms 1s10-210-1100t p , PULSE WIDTHFigure 27. Diode transient thermalimpedance as a function of pulse width (D = t p / T )dimensionssymbol[mm][inch]minmax minmax A 9.7010.300.38190.4055B 14.8815.950.58580.6280C 0.650.860.02560.0339D 3.55 3.890.13980.1531E 2.60 3.000.10240.1181F 6.00 6.800.23620.2677G 13.0014.000.51180.5512H 4.35 4.750.17130.1870K 0.380.650.01500.0256L 0.951.320.03740.0520M 2.54 typ.0.1 typ.N 4.30 4.500.16930.1772P 1.17 1.400.04610.0551T2.302.720.09060.1071TO-220ABdimensionssymbol[mm][inch]minmax minmax A 9.8010.200.38580.4016B 0.70 1.300.02760.0512C 1.00 1.600.03940.0630D 1.03 1.070.04060.0421E 2.54 typ.0.1 typ.F 0.650.850.02560.0335G 5.08 typ.0.2 typ.H 4.30 4.500.16930.1772K 1.17 1.370.04610.0539L 9.059.450.35630.3720M 2.30 2.500.09060.0984N 15 typ.0.5906 typ.P 0.000.200.00000.0079Q 4.20 5.200.16540.2047R 8° max 8° maxS 2.40 3.000.09450.1181T 0.400.600.01570.0236U 10.800.4252V 1.150.0453W 6.230.2453X 4.600.1811Y 9.400.3701TO-263AB (D 2Pak)Z16.150.6358Figure A. Definition of switching times Figure B. Definition of switching lossesIr r m90% Ir r m10% Ir r mdi/dtFtr rIFi,vtQSQFtStFVRdi/dtr rQ=Q Qr r S F+t=t tr r S F+Figure C. Definition of diodesswitching characteristicsτ1τ2nτr r rFigure D. Thermal equivalentcircuitFigure E. Dynamic test circuitLeakage inductance Lσ=180nHand Stray capacity Cσ=180pF.Published byInfineon Technologies AG,Bereich KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 2000All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.。

SVF4N60D(F)(T)(M)说明书_1.1-L

SVF4N60D/F/T/M 说明书4A、600V N沟道增强型场效应管描述SVF4N60D/F/T/M N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子的 F-CellTM 平面高压 VDMOS 工艺技术制造。

先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。

该产品可广泛应用于 AC-DC 开关电源，DC-DC 电源转换器，高压 H 桥 PWM 马达驱动。

特点∗ ∗ ∗ ∗ ∗4A，600V，RDS(on)（典型值）=2.0 Ω@VGS=10V 低栅极电荷量低反向传输电容开关速度快提升了 dv/dt 能力命名规则产品规格分类产品名称 SVF4N60T SVF4N60F SVF4N60D SVF4N60DTR SVF4N60M SVF4N60M 封装形式 TO-220-3L TO-220F-3L TO-252-2L TO-252-2L TO-251-3L TO-251D-3L 打印名称 SVF4N60T SVF4N60F SVF4N60D SVF4N60D SVF4N60M SVF4N60M 材料无铅无铅无铅无铅无铅无铅包装料管料管料管编带料管料管杭州士兰微电子股份有限公司版本号：1.12011.08.26 共10页第1页SVF4N60D/F/T/M 说明书极限参数(除非特殊说明，TC=25°C)参数名称漏源电压栅源电压漏极电流漏极脉冲电流耗散功率（TC=25°C） - 大于 25°C 每摄氏度减少单脉冲雪崩能量（注 1）工作结温范围贮存温度范围 TC=25°C TC=100°C 符号 VDS VGS ID IDM PD EAS TJ Tstg 100 0.8 参数范围 SVF4N60T SVF4N60F 600 ±30 4.0 2.5 16 33 0.26 217 -55～+150 -55～+150 77 0.62 SVF4N60D/M 单位 V V A A W W/°C mJ °C °C热阻特性参数名称芯片对管壳热阻芯片对环境的热阻符号 RθJC RθJA 参数范围 SVF4N60T 1.25 62.5 SVF4N60F 3.85 120 SVF4N60D/M 1.61 110 单位 °C/W °C/W关键特性参数(除非特殊说明，TC=25°C)参数名称漏源击穿电压漏源漏电流栅源漏电流栅极开启电压导通电阻输入电容输出电容反向传输电容开启延迟时间开启上升时间关断延迟时间关断下降时间栅极电荷量栅极-源极电荷量栅极-漏极电荷量符号 BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=480V，ID=4A， VGS=10V (注 2，3) (注 2，3) 测试条件 VGS=0V，ID=250µA VDS=600V，VGS=0V VGS=±30V，VDS=0V VGS= VDS，ID=250µA VGS=10V， ID=2A VDS=25V，VGS=0V， f=1.0MHZ VDD=300V，ID=4A， RG=25Ω 最小值 600 --2.0 -----------典型值 ----2.0 461 57 1.47 15.7 37.3 19.1 19.3 8.16 2.63 3.01 最大值 -1.0 ±100 4.0 2.4 ----------nC ns pF 单位 V µA nA V Ω杭州士兰微电子股份有限公司版本号：1.12011.08.26 共10页第2页SVF4N60D/F/T/M 说明书源-漏二极管特性参数参数名称源极电流源极脉冲电流源-漏二极管压降反向恢复时间反向恢复电荷注： 1. 2. 3. L=30mH，IAS=3.45A，VDD=155V，RG=25Ω，开始温度 TJ=25°C；脉冲测试：脉冲宽度≤300μs，占空比≤2%；基本上不受工作温度的影响。

WFP4N60(4N60)参数

W F P4N4N660S i l i c o n N-ChCha a n n el M OSOSF F ETFeatures■4A,600V,R DS(on)(Max2.2Ω)@V GS=10V■Ultra-low Gate Charge(Typical16nC)■Fast Switching Capability■100%Avalanche Tested■Isolation Voltage(V ISO=4000V AC)■Maximum Junction Temperature Range(150℃)General DescriptionThis Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.This latest technology has beenespecially designed to minimize on-state resistance,have a highrugged avalanche characteristics.This devices is specially wellsuited for half bridge and full bridge resonant topology line aelectronic lamp ballast.Absolute Maximum RatingsSymbol Parameter Value Units V DSS Drain Source Voltage600VI D Continuous Drain Current(@Tc=25℃)4A Continuous Drain Current(@Tc=100℃) 2.5AI DM Drain Current Pulsed(Note1)16A V GS Gate to Source Voltage±30V E AS Single Pulsed Avalanche Energy(Note2)240mJ E AR Repetitive Avalanche Energy(Note1)10mJ dv/dt Peak Diode Recovery dv/dt(Note3) 4.5V/nsP D Total Power Dissipation(@Tc=25℃)105W Derating Factor above25℃0.83W/℃T J,T stg Junction and Storage Temperature-55~150℃T L Channel Temperature300℃Thermal CharacteristicsSymbol ParameterValueUnits Min Typ MaxR QJC Thermal Resistance,Junction-to-Case-- 1.20℃/W R QCS Thermal Resistance,Case-to-Sink-0.5-℃/W R QJA Thermal Resistance,Junction-to-Ambient--62.5℃/WElectrical Characteristics(Tc=25℃)Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current I GSS V GS=±30V,V DS=0V--±100nA Gate-source breakdown voltage V(BR)GSS I G=±10µA,V DS=0V±30--VDrain cut-off current I DSS V DS=600V,V GS=0V--10µA V DS=480V,Tc=125℃-100µADrain-source breakdown voltage V(BR)DSS I D=250µA,V GS=0V600--V Gate threshold voltage V GS(th)V DS=10V,I D=250µA2-4V Drain-source ON resistance R DS(ON)V GS=10V,I D=3.25A- 1.8 2.2ΩInput capacitance C iss V DS=25V,V GS=0V,f=1MHz -710920pFReverse transfer capacitance C rss-1419 Output capacitance C oss-6585Switching time Rise time tr V DD=300V,I D=4.4A，R G=25Ω，(Note4,5)-55120nsTurn-on time ton-2050Fall time tf-55120Turn-off time toff-70150 Total gate charge(gate-sourceplus gate-drain)QgV DD=480V,V GS=10V,I D=4.4A(Note4,5)-1620nCGate-source charge Qgs- 3.4-Gate-drain("miller")Charge Qgd-7-Source-Drain Ratings and Characteristics(Ta=25℃)Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current I DR---4A Pulse drain reverse current I DRP---17.6A Forward voltage(diode)V DSF I DR=4.4A,V GS=0V-- 1.4VReverse recovery time trr I DR=4.4A,V GS=0V,dI DR/dt=100A/µs -390-nsReverse recovery charge Qrr- 2.2-µCNote1.Repeativity rating:pulse width limited by junction temperature2.L=18.5mH I AS=4.4A,V DD=50V,R G=0Ω,Starting T J=25℃3.I SD≤4A,di/dt≤200A/us,V DD<BV DSS,STARTING T J=25℃4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%5.Essentially independent of operating temperature.This transistor is an electrostatic sensitive devicePlease handle with cautionFig.1On-State Characteristics Fig.2Transfer Current characteristicsFig.3On Resistance variation vsDrain Current Fig.4Body Diode Forward Voltage Variation vs Source Currentand temperatureFig.5On-Resistance Variation vsJunction TemperatureFig.6Gate Charge CharacteristicsFig.7Maximum Safe Operation Area Fig.8Maximum Drain Current vsCase TemperatureFig.9Transient Thermal Response curveFig.10Gate Test circuit&WaveformFig.11Resistive Switching Test Circuit&WaveformFig.12Uncamped Inductive Switching Test Circuit&WaveformFig.13Peak Diode Recovery dv/dt Test Circuit&WaveformT O -2-2220Pa Pac c ka kage ge Dim Dimee n s i on Unit:mm。

ARK品牌FTA04N60B完整规格书

ARK Microelectronics Co., Ltd. Rev. 2.1 May. 2012600V N-Channel MOSFETGeneral FeaturesLow ON ResistanceLow Gate Charge (typical 14.7nC) Fast Switching100% Avalanche Tested RoHS CompliantHalogen-free availableApplicationsHigh Efficiency SMPS Adaptor/ChargerActive PFCLCD Panel PowerCaution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.Thermal CharacteristicsElectrical CharacteristicsARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012NOTE：[1] T J=+25℃to +150℃[2] Repetitive rating, pulse width limited by maximum junction temperature.[3] I SD=3.6A, di/dt≤100A/µs, V DD≤BV DSS, T J=+150℃[4] Pulse width≤380µs; duty cycle≤2%.ARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012ARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012ARK Microelectronics Co., Ltd. Rev. 2.1 May. 2012ARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012ARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012Test CircuitV DDFigure 17. Gate Charge Test CircuitV GSFigure 18. Gate Charge WaveformV DDFigure 19. Resistive Switching Test CircuitV DSV GSFigure 20. Resistive Switching WaveformsFTP04N60B/FTA04N60BFigure 21. Diode Reverse Recovery Test Circuit Figure 22. Diode Reverse Recovery WaveformVV DDFigure 23. Unclamped Inductive Switching Test CircuitpAVV DDBV DSSV GS22LIE ASASFigure 24. Unclamped Inductive Switching WaveformsARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012FTP04N60B/FTA04N60B Package DimensionsARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012FTP04N60B/FTA04N60BARK Microelectronics Co., Ltd.Rev. 2.1 May. 2012FTP04N60B/FTA04N60B Published byARK Microelectronics Co., Ltd.No.9, East Zijing Road, High-tek District, Chengdu, P. R. ChinaAll Rights Reserved.DisclaimersARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement.ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed.ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards.ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation.Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and dece ptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements.Life Support Policy:ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd.As used herein:1.Life support devices or systems are devices or systems which:a.are intended for surgical implant into the human body,b.support or sustain life,c.whose failure to perform when properly used in accordance with instructions for used provided in thelabeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component is any component of a life support device or system whose failureto perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.ARK Microelectronics Co., Rev. 2.1 May. 201211 / 11。

AOD4N60规格书

General DescriptionSymbol V DS Parameter Absolute Maximum Ratings T A =25°C unless otherwise notedMaximum Drain-Source Voltage Gate-Source Voltage G SV GSSymbol R θJA R θCSR θJCMaximum Case-to-sinkAMaximum Junction-to-CaseD,F°C/W°C/W 10.51.2T =25°C Continuous Drain Current BMaximum Junction-to-Ambient A,G -55MaximumThermal Characteristics Units °C/W 43ParameterTypical AOI4N60AOD4N60G S DG SDGG D DSS D GD AOU4N60SymbolMinTypMaxUnits600700BV DSS /∆TJ 0.67V/ o C 110I GSS Gate-Body leakage current ±100n ΑV GS(th)Gate Threshold Voltage3.44.1 4.5V R DS(ON) 1.8 2.3Ωg FS 6S V SD 0.761V I S Maximum Body-Diode Continuous Current4A I SM14A C iss 420528640pFC oss 355370pF C rss 2.5 4.87pF R g1.22.53.8ΩQ g 9.51214.5nC Q gs 2.8 3.6 4.5nC Q gd 2.24.4 6.6nC t D(on)17ns µA V Static Drain-Source On-Resistance V GS =10V, I D =2A Reverse Transfer Capacitance V GS =0V, V DS =25V, f=1MHz SWITCHING PARAMETERSI DSS Zero Gate Voltage Drain Current V DS =600V, V GS =0V Gate Drain Charge V DS =5V, I D =250µA V DS =480V, T J =125°C I S =1A,V GS =0VElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditionsZero Gate Voltage Drain Current ID=250µA, VGS=0V BV DSS Maximum Body-Diode Pulsed CurrentInput Capacitance Output CapacitanceDYNAMIC PARAMETERS V Gate resistanceV GS =0V, V DS =0V, f=1MHzTotal Gate Charge V GS =10V, V DS =480V, I D =4ATurn-On DelayTime Gate Source Charge Drain-Source Breakdown Voltage I D =250µA, V GS =0V, T J =25°C I D =250µA, V GS =0V, T J =150°C Diode Forward VoltageV DS =0V, V GS =±30V V DS =40V, I D =2A Forward Transconductance t r 26ns t D(off)34ns t f 21ns t rr 150190230ns Q rr1.92.43µCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.Body Diode Reverse Recovery TimeI F =4A,dI/dt=100A/µs,V DS =100VBody Diode Reverse Recovery Charge I F =4A,dI/dt=100A/µs,V DS =100VTurn-On Rise Time Turn-Off DelayTime GS =10V, V DS =300V, I D =4A,R G =25ΩTurn-Off Fall TimeA. The value of R θJA is measured with the device in a still air environment with T A =25°C.B. The power dissipation P D is based on T J(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C.G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. L=60mH, I AS =2.8A, V DD =150V, R G =10Ω, Starting T J =25°CTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSI D (A )Fig 1: On-Region CharacteristicsV R D S (O N )(Ω)I Figure 3: On-Resistance vs. Drain Current and GateN o r m a l i z e d O n -R e s i s t a n c e401.0E-041.0E-031.0E-021.0E-011.0E+001.0E+011.0E+020.20.40.60.8 1.0I S (A )V SD (Volts)Figure 6: Body-Diode Characteristics25°C125°CI D =30A25°125°012345678051015202530V DS (Volts)V GS =5.5V6V10V6.5V 0.1110100246810I D (A )GS (Volts)Figure 2: Transfer Characteristics-55°CV DS =40V25°C125°C1.01.52.02.53.03.54.04.5246810D (A)VoltageV GS =10V00.511.522.53-100-50050100150200Temperature (°C)Figure 4: On-Resistance vs. JunctionTemperature V GS =10V I D =2A0.80.911.11.2-100-5050100150200B V D S S (N o r m a l i z e d )T J (o C)Figure 5: Break Down vs. Junction TemperatureVdsC ha rgeGate Charge Test Circuit & W av eformResistiv e Switching Test Circuit & W av eformsDSS2ARVddVddVdsI dVgsB V I Unclamped Inductive Switching (UIS) Test Circuit & W av eformsI Diode Recovery Vd ARE = 1/2 LI ddVdd AR。

士兰微 SGT40N60NPFDPN 说明书 40A、600V绝缘栅双极型晶体管说明书

40A 、600V 绝缘栅双极型晶体管描述SGT40N60NPFDPN 绝缘栅双极型晶体管采用新一代场截止（Field Stop ）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。

该产品可应用于感应加热UPS ，SMPS 以及PFC 等领域。

特点♦ 40A ，600V ，V CE(sat)(典型值)=1.8V@I C =40A ♦ 低导通损耗 ♦ 超快开关速度 ♦高击穿电压命名规则SGT 40 N E 60 □□□□ PNIGBT 产品系列名称电流值,20表示20AN ChannelE:表示有带ESD空白:表示不带ESD电压值:120表示1200VNP:表示NPT 工艺 P: 表示PT 工艺T: 表示Trench 工艺空白: 表示非Trench 工艺 F: 表示采用了Field stop 工艺空白: 表示非采用Field stop 工艺 D: 表示内置了FRD 空白: 表示没有内置了FRD表示封装形式,如PN 表示TO-3P 封装形式产品规格分类产品名称封装形式打印名称材料包装 SGT40N60NPFDPNTO-3P40N60NPFD无铅料管极限参数 (除非特殊说明，T C =25°C)参数符号参数范围单位集电极-射极电压 V CE 600 V 栅极-射极电压V GE±20 V 集电极电流 T C =25°CI C 80 A T C =100°C40 集电极脉冲电流 I CM 120 A 耗散功率（T C =25°C ） - 大于25°C 每摄氏度减少 P D 290 W 2.32 W/°C 工作结温范围 T J -55～+150 °C 贮存温度范围 T stg -55～+150°C热阻特性参数符号参数范围单位芯片对管壳热阻（IGBT）RθJC0.24 °C/W 芯片对管壳热阻（FRD）RθJC 1.4 °C/W 芯片对环境的热阻RθJA35.5 °C/WIGBT电性参数(除非特殊说明，TC=25°C)参数符号测试条件最小值典型值最大值单位集射击穿电压BV CE V GE=0V,I C=250uA 600 -- -- V 集射漏电流I CES V CE=600V,V GE=0V -- -- 200 uA 栅射漏电流I GES V GE=20V,V CE=0V -- -- ±500 nA 栅极开启电压V GE(th)I C=250μA,V CE=V GE 4.0 5.0 6.5 V 饱和压降V CE(sat)I C=40A,V GE=15V -- 1.8 2.7 VI C=40A, V GE=15V, T C=125°C -- 2.1 -- V输入电容C ies VCE=30VV GE=0Vf=1MHz -- 1850 --pF输出电容C oes-- 180 -- 反向传输电容C res-- 50 --开启延迟时间T d(on)V CE=400VI C=40AR g=10ΩV GE=15V感性负载-- 18 --ns开启上升时间T r-- 80 --关断延迟时间T d(off)-- 110 --关断下降时间T f-- 105 --导通损耗E on-- 1.87 --mJ 关断损耗E off-- 0.68 --开关损耗E st-- 2.55 --栅电荷Q gV CE = 300V, I C=20A,V GE = 15V -- 100 --nC发射极栅电荷Q ge-- 11 --集电极栅电荷Q gc-- 52 --FRD电性参数(除非特殊说明，T C=25°C)参数符号测试条件最小值典型值最大值单位二极管正向压降V fm I F = 20A T C=25°C -- 1.9 2.6V I F = 20A T C=125°C -- 1.5 --二极管反向恢复时间T rr I ES =20A, dI ES/dt = 200A/μs-- 32 -- ns 二极管反向恢复电荷Q rr I ES =20A, dI ES/dt = 200A/μs-- 74 -- nC典型特性曲线图1. 典型输出特性集电极电流 – I C (A )0401201.53.06.0集电极-发射极电压 – V CE (V)集电极电流 – I C (A )集电极-发射极电压 – V CE (V)图3. 典型饱和电压特性802060100 4.5图2. 典型输出特性集电极电流 – I C (A )401200 1.5 3.0 6.0集电极-发射极电压 – V CE (V)8020601004.5040120012580206010043集电极电流 – I C (A )栅极-发射极电压 – V GE (V)图4. 传输特性40120456128020601001089711图5. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616图6. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616典型特性曲线（续）图7. 电容特性电容(p F )0200050000.11.010.030.0集电极-发射极电压 – V CE (V)开关时间 [n s ]栅极电阻 - R G (Ω)图9. 开启特性 vs. 栅极电阻300010004000102001020501004030图8. 栅极电荷特性栅极-发射极电压 - V G E (V )06153060120栅极电荷量 – Q G (nC)931290开关时间 [n s ]栅极电阻 - R G (Ω)图10. 关闭特性 vs. 栅极电阻10550010205010004030开关损耗 [m J ]栅极电阻 - R G (Ω)图11. 开关损耗 vs. 栅极电阻0.310.01020504030正向电流 - I F (A )正向电压 - V F (V)图12. 正向特性0.280.01410.0321.0典型特性曲线（续）图14. IGBT 瞬态热阻抗峰值功率阻抗 (°C /W )00.10.2510-510-410-310-1脉冲持续时间(S)0.150.050.210-210-110101100101102103102集电极电流 - I C (A )图13. SOA 特性集电极-射极电压 - V CE(V)封装外形图声明：♦士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。

4N60说明书NCE

N-Channel Super Junction Power MOSFET ⅡV DS @T jmax 650V R DS(ON) MAX 1200 m ΩI D 4 AGeneral DescriptionThe series of devices use advanced super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliantApplication● Power factor correction （PFC ） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply （UPS ）Package Marking And Ordering InformationDeviceDevice PackageMarkingNCE60R1K2 TO-220 NCE60R1K2 NCE60R1K2D TO-263 NCE60R1K2D NCE60R1K2F TO-220F NCE60R1K2FTable 1.Absolute Maximum Ratings (T C =25℃)Parameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain-Source Voltage (V GS=0V ） V DS600 V Gate-Source Voltage (V DS=0V) V GS ±30 VContinuous Drain Current at Tc=25°C I D (DC) 4 4* AContinuous Drain Current at Tc=100°C I D (DC) 2.5 2.5 APulsed drain current(Note 1)I DM (pluse) 12 12 A Maximum Power Dissipation(Tc=25℃) Derate above 25°CP D46 0.3728.5 0.23WW/°CSingle pulse avalanche energy (Note2)E AS 130mJAvalanche current(Note 1)I AR 2 A Repetitive Avalanche energy ，t AR limited by T jmax(Note 1)E AR0.2mJSchematic diagramTO-263 TO-220 TO-220FParameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain Source voltage slope, V DS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt ，V DS ≤480 V,I SD <I Ddv/dt 15V/nsOperating Junction and Storage Temperature RangeT J ,T STG -55...+150 °C* limited by maximum junction temperatureTable 2. Thermal CharacteristicParameter Symbol Value UnitThermal Resistance ，Junction-to-Case （Maximum ） R thJC 2.7 4.4 °C /WThermal Resistance ，Junction-to-Ambient （Maximum ）R thJA62 80 °C /WTable 3. Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOn/off statesDrain-Source Breakdown VoltageBV DSSV GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) I DSS V DS =600V,V GS =0V1μAZero Gate Voltage Drain Current(Tc=125℃) I DSS V DS =600V,V GS =0V 50 μA Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V±100nAGate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2.5 3 3.5 V Drain-Source On-State Resistance R DS(ON)V GS =10V, I D = 2.5A 1000 1200m ΩDynamic CharacteristicsForward Transconductance g FS V DS = 20V, I D = 2.5A4SInput Capacitance C lss 280 PFOutput CapacitanceC oss 26 PFReverse Transfer Capacitance C rssV DS =50V,V GS =0V,F=1.0MHz2.3 PF Total Gate Charge Q g 6.5 10 nCGate-Source Charge Q gs 1.3 nCGate-Drain Charge Q gd V DS =480V,I D =4A,V GS =10V2.5 nC Intrinsic gate resistance R Gf = 1 MHz open drain2.5ΩSwitching timesTurn-on Delay Time t d(on) 6 nSTurn-on Rise Time t r 3 nS Turn-Off Delay Time t d(off) 48 60 nSTurn-Off Fall Timet fV DD =380V,I D =2.5A, R G =20Ω,V GS =10V 8 15 nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode) I SD 4 APulsed Source-drain current(Body Diode) I SDMT C =25°C12 A Forward On Voltage V SD Tj =25°C,I SD =4A,V GS =0V1 1.3 V Reverse Recovery Time t rr 150 nS Reverse Recovery Charge Q rr 0.85 uCPeak reverse recovery currentI rrmTj=25°C,I F =4A,di/dt=100A/μs 11 ANotes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature2. Tj=25℃,VDD=50V,VG=10V, R G =25ΩTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)Figure1. Safe operating area for TO-220,TO-263 Figure2. Source-Drain Diode Forward VoltageFigure3. Output characteristics Figure4. Transfer characteristicsFigure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction TemperatureFigure7. BV DSS vs Junction Temperature Figure8. Maximum I D vs Junction TemperatureFigure9. Gate charge waveforms Figure10. CapacitanceFigure11. Transient Thermal Impedance for TO-220,TO-263 Figure12. Safe operating area for TO-220FFigure13. Transient Thermal Impedance for TO-220FTest circuit1）Gate charge test circuit & Waveform2）Switch Time Test Circuit：3）Unclamped Inductive Switching Test Circuit & WaveformsTO-263-2L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.470 4.670 0.176 0.184A1 0.000 0.150 0.000 0.006B 1.170 1.370 0.046 0.054b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.05410.310 0.394 0.406D 10.010E 8.500 8.900 0.335 0.350e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.20415.450 0.593 0.608L 15.050L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REFTO-220-3L-C Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.0550.390 0.40410.250D 9.910E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150TO-220F Package InformationNCE60R1K2,NCE60R1K2D,NCE60R1K2F ATTENTION:■Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications.■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein.■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD.■Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use.■This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.。

4N60 PDF规格书

12
VDS = 120V
VGS, Gate-Source Voltage [V]
1000
10
VDS = 300V VDS = 480V
Capacitance [pF]
800
* Notes : 1. VGS = 0 V
8
600
Coss Ciss
6
2. f = 1 MHz
400
4
200
2
* Note : ID = 3.9A
10
1
10 us 100 us 1 ms
ID, Drain Current [A]
3
ID, Drain Current [A]
.
10
0
10 ms DC
* Notes : o 1. TC = 25 C
2
1
10
-1
3. Single Pulse
2. TJ = 150 C
o
10
0
10
1
10
2
10
3
0 25
10
1
10
0
1
VGS = 20V
150 C
o
25 C
* Notes : 1. VGS = 0V
o
* Note : TJ = 25 C
o
2. 250µs Pulse Test
0 0.0
2.5
5.0
7.5
10.0
12.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
PDM t1 t2
10
-2

FTD4N60B规格书

4.5
V/ns
300 ℃
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
ARK Microelectronics Co., Ltd.
Figure 20. Resistive Switching Waveforms
ARK Microelectronics Co., Ltd.
w w w. a r k - m i c r o . c o m 7 / 11
Rev. 2.1 May. 2012
di/dt adj.
Current Pump
Applications
High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power
FTU04N60B/FTD04N60B
BVDSS 600V
RDS(ON) (Max.) 2.8Ω
ID 3.6A
Ordering Information
TJ and TSTG Operating and Storage Temperature Range
TC=25℃ unless otherwise specified
FTU04N60B FTD04N60B
Unit
600
V
3.6
Figure 3
A
Figure 6
89
W
0.71
W/℃
±30
V
140
mJ
w w w. a r k - m i c r o . c o m 1 / 11

IXGH48N60C3D1;中文规格书,Datasheet资料

Coes 100
Cres
20 10
10 0 5 10 15 20 25 30 35 40
0 200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - ºC / W
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
VCE(sat) - Normalized
IC - Amperes
40 35 30 25 20 15 10 5 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 7V 9V
1.0 0.9 0.8 0.7 0.6 0.5 25 50 75 I
C
C
= 30A
I
C
= 15A
100
125
150
VCE - Volts
Characteristic Values Min. Typ. Max. 3.0 5.5 V 300 μA 1.75 mA ±100 2.3 1.8 2.5 nA V V
z z z z z z z
High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts

《场效应管参数》

5.5 400 1 2.0 4.0 10 ±100180 1000 10 400 0.54 2.0 4.0 10 ±100260 1800 4.5 500 1.5 2.0 4.0 10 ±100180 1050 8 500 0.8 2.0 4.0 10 ±100260 1800000V 0.5A 20W 0.4us 00V 12A 160W 7MHz 50V 30A 250W200V 30A 250W 5MHz 0/40V 10A 20W0/120V 7A 10W 90MHz 50V 3A 10W50V 3A 10W 50MHz 000V 10A 100W 1us 000/400V 10A 75W00V 2A 40W HORDEFL 0/200V 10A 60W00V 6A 80W0V 20A 80W 0.08R50V 60A 250W 0.18E 0V 36A50V 27A 90W 0.055R 0V 39A 125W0V 45A 125W50V 8A 40W 0.3R00V 21A00V 34A 125W 0.055 200V 7A 75W1000V 2.5A 75W <5E 400V 12.5A 125W <E3 400V 10.5A 125W500V 9.5A 125W 0E6 600V 8.5A 150W 0.8R 600V 8A 150W 0.9E 500V 13.5A 180W <E4 200V 33A 170W 0.07E 100V 41A 150W <E045 100V 32A 125W1000V 5.5A 125W 140 500V 10.5A 125W 1000V 2.5A 75W 5E0V 18A 80W 0.1R50V 11A 35W 0.12R 100V 11A100V 10A 40W ISOLAT 00V 7A 40W 0.4R200V 5.8A 40W 0.6R160V 8A 125W200V 8A 125W160V 8A 125W200V 8A 125W600V 4A 75W 2R600V 4.3A 75W600V 8A 150W 0.9R00V 3.6A 80W <2E5 GTON BJT ARRAY0V 10A 50W 50MHzV 10A 50W0V 10A 50W 0.5us50V 0.1A 0.2W 10K/10 50V 0.1A 10K/10KOHM 50V 0.1A 10KOHM50V 0.1A 10K/47KOHM 50V 0.1A 22K/22KOHM 50V 0.1A 22K/47KOHM 50V 0.1A 0.2W 47/47K 50V 0.1A 4K7/4K7OHM 50V 0.1A 0.2W 47K/4750V 0.1A 0.3W Rb=47K 50V 0.1A 10K/10KOHM 50V 0.1A 10K50V 0.1A 10K/47K50V 0.1A 0.2W 22/22K 50V 0.1A 22K/22KOHM 50V 0.1A 0.2W 4K7/4K 50V 0.1A 4K7/4K7OHM 50V 0.1A 4K7OHM50V 0.1A 0.3W 4.7K/1 50V 0.1A 0.2W 47/47K 50V 0.1A 47K/47KOHM 50V 0.1A 0.2W 47/47K 50V 0.1A 0.3W 47KOhm 50V 0.1A 0.2W 47/22K ARL+D 450V 84A 250W NGTON ARRAYNGTON ARRAYV 3A 10WBT 250V 20A 180WBT 250V 20A 250WD 1500V 10A 150W 0.2 D 1500V 15A 180W 0.2 RRAY 7x45V 0.4A INGTON TRAN. ARRAY 100V 9.2A 60W <58/5 100V 28A 150W 0E77 200V 9A 75W <0E4200V 18A 125W200V 30A 150W400V 5.5A 75W <1E 400V 10A 125W <62/1 400V 13A 150W 0.4E 500V 8A 125W <0E85 500V 13A 150W100V 10A 70W 0.27R 100V 16A 90W 0.16R 100V 28A 150W 0.077 200V 9A 75W 0.4E200V 18A 125W 0.18R 250V 14A 125W <E28 400V 5.5A 100W 1.0R400V 10A 125W 0.55R 400V 5.5A 40W <E55 500V 3A 75W 3.0R500V 4.5A 100W 1.5R 500V 3A 35W 1.5R500V 4.5A 40W 0.85R 500V 4.5A 40W 0.85R 100V 19A 125W200V 11A 125W <E5100V 12A 88W 0.3R100V 19.0A 150W 0R2 200V 1.75A 20W 3R0 200V 3.5A 40W 1R5200V 6.5A 75W 0R8200V 11A 125W 0R5600V 3.9A 100W 2R2 600V 6.2A 125W 1R2 800V 4.1A 125W <3E 100V 1.3A 1.3W <E27 T 100V 1A 1.3W <E6T 200V 0.6A 1E5 1W <9 100V 6A 20W 0.3E60V 70A 300W <E009 100V 31A 180W OE77 100V 40A 180W 0E55 200V 20A 150W 0E18 200V 33A 180W400V 11A 150W <E55 400V 18A 250W 0E3 400V 28A 410W 0.2E 500V 14A 180W 0E4 500V 25A 410W OE27 T 100V 19A 150W OE2 T 200V 12A 150W600V 6.8A 150W 1.2E 600V 13A 250W 0.60E 800V 5.4A 150W <2E 900V 7.8A 190W <1E2 900V 4.7A 150W <2E5 900V 6.7A 190W <1E6 T 60V 9.6A 50W 0.28W 50V 15A 40W <120/70 60V 46A 250W 0E02830V 0.5A 100MHzV 50mA 0.4W 30EV 6mA 0.35WV 30mA Up<4V VHFV 60mA Up<6.5V VH0V 0.7A 0.8W 50MHz0V 0.15A 0.25W 50MHz作者：佚名来源：本站整理发布时间：2007-11-14 15:07:38A 0.3W 8GHz 8 A 4.5W 4GHzmA Up<4V0mA 4.9GHz 14dB mA 0.8W 1.3GHz A 0.25W 1.4GHzA 0.2W 1GHz0.8W >100MHz 0.8W >100MHz 0.8W >100MHz50MA 0.3WA 5GHz 19.5dB mA 5.5GHz 16dB A 5GHz 18dBmA 6GHz 14dBA 5GHz 19.5dB mA 5.5GHz 16dB mA 5GHz REVERS mA 6GHz 14dB5A 1.5W 3.5GHz A 5GHz 16dB1A 5.5GHz 11dB A 1GHz E1A 450MHz G15A 4W 175MHz5A 4.5W 500MHz A 50mW 500NHz V 1A 0.8W5A 0.75W 70MHzA 4.5GHz 12dB0.8W >100MHz 25mA 3.6-5GHz mA AMPL.mA AMPL.A AMPL.3A 1.5W 1.2GHz 3A 1.5W 1.1GHz A 0.25W 1.6GHz 1A 0.4W 150MHz 1A 0.7W 50MHz A 0.3W 1.6GHz mA 3.2GHz 13dB0.87WA 0.36W 70MHz0.8W B>850.8W B>85A 2.2W 700MHz0.8WA 0.2W 1.3GHzA 0.3W 150MHz0.7W 55/175ns 0.7W0.8W 100MHz0.8WA 0.7WA 850MHzA 2GHz 8dB860MHz 17dB0MHz 35dB0MHz 38dB5A 10W 3.5GHz 100W 650MHz5A 195W 275MHz 53A 20W 175MHz 36W 850MHz73W 800MHz25W 175MHz50W 175MHz.13A 0.8W 26R3A 0.8W 5R.2A 0.8W18A 0.83W0.3A 1W <7E 0.25A 1W <8E0.25A 1W <8EA <35/285nsB>100A 0.8W 350MHzA 0.8W0.17A 13/29ns 1A 0.2W5W1A 0.8W0.8A <50/110ns .3A 1W 6R.35A 1.5W <6E .15A 1W 38/45 A 225mW 400MHz mA 0.35WmA 0.2W 100EA 0.3W B>180A 5W 130MHzA .36W 7/18nsA 0.36WA 0.36W 25/350.8W 35/40ns5WA 0.3W B>1800.8WA 0.36W5A 0.8W 100MHz 22A 95W 0.1EA 50WA 50WA 85WA 30W 15MHz0A 50W 6MHz5A 0.8W 100MHz V 10A 62WV 3A 30W TO300V 5A 32W 0.5US V 8A 35W 0.6US 00V 8A 35W 0.6US 10AV 5A 12W8A 60W8A 150W THIN B A 80W 7MHzV 8A 150WA 12.5W TO3.5A 10W TO300V 5A 45W 0.4us 00V 5A 45W 0.4US 8A 125W 0.4us V 8A 45W 0.4us V 8A 45W 0.4US 0V 8A 125W 0.4us 00V 8A 45W 0.4us 00V 8A 45W 0.4us V 10A 45W 0.2us V 10A 45W 0.2us 00V 10A 45W 0.35 00V 10A 45W 0.35 12A 0.2usV 12A 45W 0.2us V 12A 45W 0.2US 0V 12A 0.2usV 12A 45W 0.2us V 12A 45W 0.2USV 10A 45WV 6A 25WV 3A 25WA 75W0/400V 6A 60W TO3 65W 0.75us7A 65W 0.75us65W 0.75us7A 65W 0.75us7A 60W8AA 60W TO38A 60W2A 120W TO312A 120WA 114WA 70W TO2205V 6A 70W70WA 75W/700V 6A 75W.5A 75W 0.9usV 2.5A 75W.5A 20W100W POWER5A 100W POWER 0V 5A 20W POWER 8A 125W 0.7us 8A 125W 0.7us 8A 125W 0.7us 8A 34W 0.7us 8A 34W 0.7us 8A 34W 0.7us V 8A 125W 0.7us V 8A 125W 0.7us 0V 8A 34W 0.7us 0V 8A 34W 0.7us 0V 8A 125W75V 7A 75W86WA 62WA 100W TO3A 100W 0.7us7A 90W90W TO37A 90W10A 100W.5A 75W 0.7us0V 5A 32W 0.7us 5A 32W 0.7us3A 40WV 8A 60W 0.35V 8A500/700V 5A 50WV 7A 75WV 0.5AV 6A 125W 0.20V 6A 125W 0.210A 120W0V 10A 120WA 175W0A 125W15A 175W15A 125W15A 150WV 15A 150W450V 7.5A 80WV 7.5A ISOLATED5A 125W14A 160W 0.11us 0V 14A 70W 0.11us19A 200W 0.11us 5A 50W0/700V 5A 50W8A 60W 3.9us0/700V 8A 60W8A 60W 3.9us0/700V 8A 60W10A 60W800V 4A 125W <4E 400V 14A 180W600V 9A 180W <1E2 800V 7.6A 220W 2E 0V 13A 25W <E1800V 1.2A 30W 8E 600V 2.2A 30W 2R5 800V 2A 30W800V 2A 75W600V 4A 100W 2R5 200V 19A 150W <E2 0V 52A 150W 0.028E 800V 4A 125W 3E0V 35A 125W 0.055E 5A 75W 0.4usV 5A 35W 0.4us75W 12MHz4A 65W 20MHz 15A 125WV 60A 350WV 60A 350W50V 30A 250WA 175W15A 175W15A 125W0A 250W5A 100W 0.8us 5A 100W 0.8us 5A 20W 0.8us 8A 125W 0.8us 8A 23W 0.8us V 28A 175W50V 6A 110W 0. 6A 33W 0.8us 5V 100A 250WV 50A 250W8A 100WV 15A 110W B> A 200WA 200W10A 100W 0.8us A 250WV 50A 250W55W 9MHzA 250W 1.5usA 250W 1.5usV 40A 250WA 250WA 250WA 250WA 85W 1.8us0A 85WA 65W 40nsA 65W 40ns0A 65W 40NS50V 6A 85W15A 150W 0.8us 15A 65W00V 15A 150W 15A 65WA 150W10A 70WA 250W0V 10A 140WV 10A 125WV 2A 15W 12MHz 30A 150W 5MHz 5A 100W 0.8us 5A 32W 0.8us 125W 0.8us8A 125W 0.8us A 34W 0.8usA 175W 0.8us 15A 175W 0.8us A 125W <300NS A 125W 20MHzA 150WA 150W 1.5usA 150WA 150W TO-218 A 100W10A 80W50W 0.4usA 50W 0.4usA 150W 1.5usA 150WA 150W >8MHzA 350W 1.5usA 250W POWSWI V 30A 350WV 20A 350W >8 8A 150W15A 35W30A 120W 8MHz A 120W 1.2usA 120W0V 18A 120WA 120W15A 175W 0.8us V 3.5A 10W >8 10W >8MHz10W 8MHzV 2A 35W >20MHz 40W >2.5MHzA 100W0A 100W60W40W 0.4usA 40W 0.4us2A 18W 0.4us.5A 20W 0.4us0.5A 20W 0.4us 2A 160W 7MHz0A 250W30A 250W 5MHz 10A 20WV 7A 10W 90MHz A 10WA 10W 50MHz10A 100W 1us 00V 10A 75WA 40W HORDEFL V 10A 60WA 80WA 80W 0.08R0A 250W 0.18E A7A 90W 0.055R A 125WA 125WA 40W 0.3R1A5A 75W <1E54A 125W 0.0552.5A 75W <5E 12.5A 125W <E3 10.5A 125W9.5A 125W 0E6 8.5A 150W 0.8R 8A 150W 0.9E 13.5A 180W <E4 33A 170W 0.07E 41A 150W <E045 32A 125W5.5A 125W 140 10.5A 125W2.5A 75W 5EA 80W 0.1R11A 35W 0.12R 11A10A 40W ISOLATA 40W 0.4R5.8A 40W 0.6R .5A 70W <1E68A 125W8A 125W8A 125W4A 75W 2R4.3A 75W8A 150W 0.9R.6A 80W <2E5 BJT ARRAYA 50W 50MHz50WA 50W 0.5us0.1A 0.2W 10K/10 0.1A 10K/10KOHM 0.1A 10KOHM0.1A 10K/47KOHM 0.1A 22K/22KOHM 0.1A 22K/47KOHM 0.1A 0.2W 47/47K 0.1A 4K7/4K7OHM 0.1A 0.2W 47K/47 0.1A 47K/47K0.1A 0.3W Rb=47K 0.1A 10K/10KOHM 0.1A 10K0.1A 10K/47K0.1A 0.2W 22/22K0.1A 22K/22KOHM 0.1A 0.2W 4K7/4K 0.1A 4K7/4K7OHM 0.1A 4K7OHM0.1A 0.3W 4.7K/1 0.1A 0.2W 47/47K 0.1A 47K/47KOHM 0.1A 0.2W 47/47K 0.1A 0.3W 47KOhm 0.1A 0.2W 47/22K 450V 84A 250W ARRAYARRAY10W0V 20A 180W0V 20A 250W.2A 170W 1E90V 10A 150W 0.2 0V 15A 180W 0.2 7x45V 0.4AN TRAN. ARRAY 9.2A 60W <58/5 28A 150W 0E779A 75W <0E418A 125W30A 150W5.5A 75W <1E10A 125W <62/1 13A 150W 0.4E 8A 125W <0E85 13A 150W10A 70W 0.27R 16A 90W 0.16R 28A 150W 0.077 9A 75W 0.4E18A 125W 0.18R 14A 125W <E28 5.5A 100W 1.0R 10A 125W 0.55R 5.5A 40W <E55 3A 75W 3.0R4.5A 100W 1.5R 3A 35W 1.5R 4.5A 40W 0.85R 4.5A 40W 0.85R 19A 125W11A 125W <E5 12A 88W 0.3R19.0A 150W 0R2 1.75A 20W 3R0 3.5A 40W 1R56.5A 75W 0R811A 125W 0R53.9A 100W 2R2 6.2A 125W 1R24.1A 125W <3E 1.3A 1.3W <E27 V 1A 1.3W <E6V 0.6A 1E5 1W <9 6A 20W 0.3E70A 230W <0E014 70A 300W <E009 31A 180W OE77 40A 180W 0E55 20A 150W 0E18 33A 180W11A 150W <E55 18A 250W 0E328A 410W 0.2E 14A 180W 0E425A 410W OE27 V 19A 150W OE26.8A 150W 1.2E 13A 250W 0.60E 5.4A 150W <2E7.8A 190W <1E2 4.7A 150W <2E5 6.7A 190W <1E6 9.6A 50W 0.28W 5A 40W <120/70 6A 250W 0E028 0A 250W 0.018E0.5A 100MHzA 0.4W 30E0.35WA Up<4V VHFA Up<6.5V VH7A 0.8W 50MHz 15A 0.25W 50MHz2A 1W 120MHz0.1A 50MHz.7A 1W 30MHzA 1W 120MHz.15A 0.4W 130MHz .5A 0.625W.5A 0.625W.15A 0.625W.15A 0.625W0mA 0.2W 500MHzA 30W 3MHzTRANS.PR. TRANS.PR.IST. TRANSISTO RAY+DIODE 1.5A20mA 0.5W 450MHz .1A 0.3W 4GHz00V 20A 175W B>00/400V 20A 1758A 90W00V 10A 175W00V 50A 250W 1usV 30A 200WV 50A 300WV 50A 300W20A 250W 3MHz 20A 250W 3MHz 15A 180W 0.8MHz 15A 180W 0.8MHz 00V 16A 250W16A 250W 4MHz 16A 250W16A 250W 4MHz 10A 175W10A 150W5A 150W 4MHz10A 150W10A 150W16A 150WA 125W > 2.5MHz 0A 200W200W4A 75W TO220 8A 75W8A 75W8A 80W8A 50W 30MHz 8A 50W 30MHz 5A 100W 13MHz 6A 100W 14MHz 8A 125W 0.3US 15W >65MHzA 15W >40MHzA 15W >40MHz2A 15W >16MHz 2A 15W B>1K5 10A 90W AFPOWER 10A 90W AFPOW. .5A 20W VIDPOW .5A 20W VIDPOW 00V 8A 80WV 4A 40W B>750 5A 80W B>7505A 35W 13MHz 8A 45W 0.3us 5A 35W 13MHz 10A 150W 3MHz V 12A 150W 3MHz 10A 150W0mA 635mW 500MHz 5A 0.625W DRIV1A 0.21W 50MHz 0.5A 0.625W5A 0.625W2A 625mW 100MHz .5A 0.625W.3A 625mW 20MHz5A 0.625W DRIV1A 0.35W >125MHz .5A 0.625WmA 0.35W 650MHz6A 4W 174MHzA 60W 30MHz4W 50MHz0V 4A 40W >10MHz A 125W 1E8.8A 0.5W PLASTI5A 0.5W 12/18ns .8A 0.5W PLASTI6A 0.4W PLASTI.6A 0.4W PLASTI mA 0.2W 600MHz5A 0.625W 100MHz A 47K/47KV 40A 160W 0.04E ANSIST0R112.5/117.5V8A 50W 0.7us8A 50W 0.7usV 8A 50W 0.3us10A 100W7A 70W 0.3us0V 5A 25W 0.3us7A 85W7A 95W10A 140W7A 35W7A 55WV 5A 25W POWERARRAY5A 1W 100MHz5A 1W 100MHzV 20mA 0.5W 200MHz V 20mA 0.5W 190MHz 60V 4A B>1K30V 1A B>10060V 4A B>1K50V 4A B>1K100V 4A B>1K2*60V 4A 20W B>160V 1.5A B>402x60V 3A B>4060V 2A B>2KARRAYARRAYV 2.9A 80W <4E0V 2.1A 40W <4EV 4.3A 100W <2E20V 2.7A 40W <2E2V 4A 110W <3E0V 2.5A 45W <3E0V 14.6A 190W 0.0 60V 70A 142W 0.014E V 10A 60W8A 80W15A 80W2A 50W2A 50W5A 65W5A 65W8A 70W8A 70W10A 125WV 10A 80W0V 10A 125W0/400V 7A 80W 10A 3W15A 90W NF/S-L A 30W >3MHz15A 90W NF/S-L 0A 80W0A 80W 3MHz5A 125W 3MHz5A 125W 3MHzA 65W 3MHzA 65W40W 2usTIPL761A SI-N 1000V 4A 100WTIPL762A SI-N 800V 6A 120W POWER TIPL763A SI-N 1000V 8A 120W 8MHz TIPL790A SI-N 150V 10A 70W 10MHz TIPL791A SI-N 450V 4A 75WU440 2xN-FET 25V 30mA 0.35WUPA63H 2xN-FET 60V Idss>20mA 0.5UPA81C N-ARRAY 8x40V 0.4A B>1K VN10KM N-FET 60V 0.31A 5E Up<2.5 VN66AFD N-FET 60V 2A 12W 3E Up<2. VN88AFD N-FET 80V 1.3A 20W Up<2.5 ZTX213 SI-P 45V 0.2A 0.3W 350MHz ZTX342 SI-N 120V 0.1A 0.3WZTX450 SI-N 60V 1A 1W 150MHzZTX550 SI-P 60V 1A 1W >150MHzZTX653 SI-N 120V 2A 1W >140MHz ZTX753 SI-P 120V 2A 1W TO92ZTX753M1TA SI-P 120VBU108 1500V 5A 12.5W --BU208A 1500V 5A 12.5W --BU208D 1500V 5A 12.5W *BU209A 1700V 5A 12.5W --BU308 1500V 5A 12.5W --BU500 1500V 6A 75W --BU508A 1500V 7.5A 75W -- BUY71 2000V 2A 40W --C1942 1500V 3A 50W --C2027 1500V 5A 50W --C2125 2200V 5A 50W --C3480 1500V 3.5A 80W *C3481 1500V 5A 120W *C3482 1500V 6A 120W *C3484 1500V 3.5A 80W -- C3485 1500V 5A 120W --C3486 1500V 6A 120W --C3685 1500V 6A 120W --C3686 1500V 7A 120W --C3687 1500V 8A 150W --C3688 1500V 10A 150W -- C3729 1500V 5A 50W --C3883 1500V 5A 50W *C4199A 1500V 10A 100W -- C4291 1500V 5A 100W --C4292 1500V 6A 100W --C4303A 1500V 6A 80W -- D348 1500V 7A 50W --D820 1500V 5A 50W --D821 1500V 6A 50W --D822 1500V 7A 50W --D838 2500V 3A 50W --D869 1500V 3.5A 50W * D870 1500V 5A 50W *D871 1500V 6A 50W *D898 1500V 3A 50W *D899 1500V 4A 50W *D900 1500V 5A 50W *D903 1500V 7A 50W --D904 1500V 7A 60W --D950 1500V 3A 42W *D951 1500V 3A 65W *D952 1500V 3A 70W *D953 1500V 5A 80W *D954 1500V 5A 95W *D957A 1500V 6A 50W -- D994 1500V 8A 50W --D995 2500V 3A 50W --D1016 1500V 7A 50W -- D1142 1500V 3.5A 50W * D1143 1500V 5A 65W * D1172 1500V 5A 65W * D1173 1500V 5A 70W * D1174 1500V 5A 85W *D1175 1500V 5A 100W * D1290 1500V 3A 50W * D1291 1500V 3A 65W * D1341 1500V 5A 50W -- D1342 1500V 5A 50W * D1343 1500V 6A 50W -- D1344 1500V 6A 50W * D1397 1500V 3.5A 50W * D1398 1500V 5A 50W * D1399 1500V 6A 60W * D1402 1500V 5A 120W -- D1403 1500V 6A 120W -- D1426 1500V 3.5A 80W * D1427 1500V 5A 80W * D1428 1500V 6A 80W * D1431 1500V 5A 80W -- D1432 1500V 6A 80W -- D1433 1500V 7A 80W -- D1434 1500V 5A 80W -- D1454 1500V 4A 50W * D1455 1500V 5A 50W * D1456 1500V 6A 50W * D1545 1500V 5A 50W -- D1546 1500V 6A 50W --D1547 1500V 7A 50W -- D1548 1500V 10A 50W -- D1554 1500V 3.5A 40W * D1555 1500V 5A 50W * D1556 1500V 6A 50W * D1557 1500V 5A 80W -- D1632 1500V 4A 70W * D1635 1500V 5A 100W * D1650 1500V 3.5A 50W * D1651 1500V 5A 60W * D1652 1500V 6A 60W * D1653 1500V 2.5A 50W -- D1654 1500V 3.5A 50W -- D1655 1500V 5A 60W -- D1656 1500V 6A 60W -- D1710 1500V 6A 100W -- D1711 1500V 7A 100W -- D1729 1500V 3.5A 60W * D1730 1500V 5A 100W * D1731 1500V 6A 100W * D1732 1500V 7A 120W * D1737 1500V 3.5A 60W -- D1738 1500V 5A 100W -- D1739 1500V 6A 100W --D1876 1500V 3A 50W * D1877 1500V 4A 50W * D1878 1500V 5A 60W * D1879 1500V 6A 60W * D1880 1500V 8A 70W * D1881 1500V 10A 70W * D1882 1500V 3A 50W * D1883 1500V 4A 50W -- D1884 1500V 5A 60W -- D1885 1500V 6A 60W -- D1886 1500V 8A 70W -- D1887 1500V 10A 70W -- D1911 1500V 5A 50W * D1941 1500V 6A 50W -- C3885 1400V 7A 50W -- C3888 1400V 7A 80W -- C3891 1400V 6A 50W * C3893 1400V 8A 50W * C3896 1400V 8A 70W -- C4123 1500V 7A 60W * C4125 1500V 10A 70W * C4294 1500V 6A 50W * C3886 1400V 8A 50W -- C3889 1400V 8A 80W --C3892 1400V 7A 50W *C3895 1400V 7A 60W --C4122 1500V 6A 60W *C4124 1500V 8A 70W *C4293 1500V 5A 50W *C4769 1500V 7A 60W *BU2506AF 1500V 3.5A 50W -- BU2507AF 1500V 6A 45W -- BU2508AF 1500V 8A 45W -- BU2520AF 1500V 10A 45W -- BU2522AF 1500V 10A 80W -- BU2523AF 1500V 10A 80W -- BU2525AF 1500V 12A 80W -- BUW11AF 1000V 5A 100W -- BUW13AF 1000V 15A 175W -- BUW48AF 1000V 60A 150W -- BUT12A 1000V 10A 100W -- BUS13A 1000V 15A 125W -- BUX48A 1000V 7A 175W -- BUX48C 1200V 15A 175W -- BUX85 1000V 3A 40W -- BUX98A 1000V 30A 250W -- BU2506DF 1500V 3.5A 50W * BU2507DF 1500V 6A 125W *。

士兰微SVF4N60规格书(最新版)

产品规格分类
产品名称封装形式打印名称材料
包装 SVF4N60T TO-220-3L SVF4N60T 无铅料管 SVF4N60F TO-220F-3L SVF4N60F 无铅料管 SVF4N60FG TO-220F-3L SVF4N60FG 无卤料管 4A 、600V N 沟道增强型场效应管
描述
SVF4N60D/F/FG/T/K/M/MJ/MJG N 沟道增强型高压功率MOS 场效应晶体管采用士兰微电子的F-Cell TM 平面高压VDMOS 工艺技术制造。

先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿
极限参数(除非特殊说明，T
=25°C)
C
源-漏二极管特性参数
漏极电流– I D(A)源漏电压– V SD(V)
典型特性曲线（续）
图5. 电容特性图6. 电荷量特性
10101010
漏源电压 - V DS(V)10101010
漏源电压 - V DS(V)
典型特性曲线（续）
3
图9-4. 最大安全工作区域(SVF4N60MJ(G))图9-3. 最大安全工作区域(SVF4N60D/M)
典型测试电路
12V
栅极电荷量测试电路及波形图
封装外形图
封装外形图（续）
封装外形图（续）。

JCS4N60B-201007A

0.0
10-1
100
101
V DS Drain-Source Voltage [V]
0
0
2
4
6
8
10
12
14
Qg Toltal Gate Charge [nC]
Capacitance [pF]
版本：201007A
5/12
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
BVDSS ID=250μA, VGS=0V
600 - - V
击穿电压温度特性
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA,
TJ
25℃
referenced
to
-
0.65
-
V/℃
零栅压下漏极漏电流 Zero Gate Voltage Drain Current IDSS 正向栅极体漏电流
RDS(ON) VGS =10V , ID=2A
- 1.7 2.4 Ω
正向跨导
Forward Transconductance
gfs
动态特性 Dynamic Characteristics
VDS = 40V , ID=2A（note 4） - 4.7 - S
输入电容 Input capacitance 输出电容 Output capacitance
0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
12
VDS=480V

三极管4N60是什么管用什么管能代用。

厂效应管，4A,600V，可以用SO813 （FQPF）6N60替换。

常用三极管型号及参数晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应IRF440 500V 8A 125W * * NMOS场效应晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN2SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿）2SB669 70V 4A 40W * * PNP(达林顿）晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N6277 180V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型TIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ11032 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPNBU2506 1500V 7A 50W * * NPNBU932R 500V 15A 150W * * NPNBU806 400V 8A 60W * * NPNBU406 400V 7A 60W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BF458 250V 0.1A 10W * * NPNBD682 100V 4A 40W * * PNP晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型MJ10015 400V 50A 200W * * NPNMJ10012 400V 10A 175W * * NPN(达林顿)MJ4502 90V 30A 200W * * PNPMJ3055 60V 15A 115W * * NPNMJ2955 60V 15A 115W * * PNPMN650 1500V 6A 80W * * NPNBUX98A 400V 30A 210W * * NPNBUX84 800V 2A 40W * * NPNBUW13A 1000V 15A 150W * * NPNBUV48A 450V 15A 150W * * NPNBUV28A 225V 10A 65W * * NPNBUV26 90V 14A 65W * * NPNBUT12A 450V 10A 125W * * NPNBUS14A 1000V 30A 250W * * NPN晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BD681 100V 4A 40W * * NPNBD244 45V 6A 65W * * PNPBD243 45V 6A 65W * * NPNBD238 100V 2A 25W * * PNPBD237 100V 2A 25W * * NPNBD138 60V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD135 45V 1.5A 12.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPNBC546 80V 0.2A 0.5W * * NPNBC338 50V 0.8A 0.6W * * NPNBC337 50V 0.8A 0.6W * * NPNBC327 50V 0.8 0.6W * * PNPBC307 50V 0.2AA 0.3W * * PNP。

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█极限参数（T A =25℃）
参数说明符号
测试条件
最小值典型值最大值单位
漏源反向电压 BV DSS V GS =0V , I D =250µA 600 V 漏源截止电流 I DSS V DS = 600V , V GS = 0V, T J = 25℃
10 µA 栅源截止电流 I GSS V GS = ±30V ±100 nA 通态电阻 R DS(ON) V GS =10V ,I D =2A 1.77 2.2 Ω 栅-源极开启电压
V GS(TH) V DS = V GS , I D = 250µA 2.0 4.0 V 跨导
g fs
V DS =50V , I D = 2A
3.1
S
参数说明
符号数值单位漏极—源极电压 V DSS 600 V 漏极电流(连续) I D 4 A 漏极电流(脉冲) I DM 17.6 A 栅源电压 V GS ±30 V 耗散功率(TC=25℃) P D 100 W 结温 T J 150 ℃ 贮存温度 T atg -55-150 ℃ █电参数（T A =25℃）
G D S
广州友益电子科技有限公司
N-Channel Enhacement Mode Field Effectt Transistor
4N60
█ 主要用途
高速开关应用
开关特性
图一安全工作区曲线
I
D
(A)
V DS(V) P
D
(W)
T C(℃)
图二P D-T C关系曲线
图三I D-T C关系曲线
I
D
(A)
T C(℃)
图四典型输出特性曲线
I
D
(A)
V DS(V)
Z θJC
t p (s)
图八 R DS(ON)-V GS 曲线
R DS(ON)( Ω) 图五结到管壳热阻
图六最大峰值电流
I DM (A)
t p (s)
图七典型传输特性曲线
I D (A) V GS (V)
V GS (V)
图九 R DS(ON)-I D 曲线
图十 R DS(ON)-T J 曲线
图十一 V GS(TH)-T J 曲线
图十二 C-V DS 曲线
C(pF)
R DS(ON)( Ω)
I D (A)
R DS(ON) T J (℃)
V GS(TH) T J (℃)
V DS (V)。