BT152单向可控硅

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated thyristors in a plastic SYMBOL PARAMETER

MAX.MAX.MAX.UNIT envelope,intended for use in applications requiring high BT152-400R 600R 800R bidirectional blocking voltage V DRM ,Repetitive peak off-state 450650800V capability and high thermal cycling V RRM voltages

performance.Typical applications I T(AV)Average on-state current 131313A include motor control,industrial and I T(RMS)RMS on-state current

202020A domestic lighting,heating and static I TSM

Non-repetitive peak on-state 200

200

200

A

switching.

current

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETER

CONDITIONS

MIN.MAX.

UNIT -400R -600R -800R V DRM Repetitive peak off-state -45016501800

V voltages

I T(AV)Average on-state current half sine wave; T mb ≤ 103 ˚C -13

A I T(RMS)RMS on-state current all conduction angles

-20A I TSM

Non-repetitive peak half sine wave; T j = 25 ˚C prior to on-state current

surge t = 10 ms -200A t = 8.3 ms -220A I 2t I 2t for fusing

t = 10 ms

-200A 2s dI T /dt Repetitive rate of rise of I TM = 50 A; I G = 0.2 A;-200A/µs on-state current after dI G /dt = 0.2 A/µs triggering

I GM Peak gate current -5A V GM Peak gate voltage

-5V V RGM Peak reverse gate voltage -5V P GM Peak gate power -20W P G(AV)Average gate power over any 20 ms period -0.5W T stg Storage temperature -40150˚C T j

Operating junction -125

˚C

temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.TYP.MAX.UNIT R th j-mb Thermal resistance

-- 1.1K/W junction to mounting base R th j-a

Thermal resistance in free air -

60

-

K/W

junction to ambient

STATIC CHARACTERISTICS

T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS

MIN.TYP.MAX.UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A -332mA I L Latching current V D = 12 V; I GT = 0.1 A -2580mA I H Holding current V D = 12 V; I GT = 0.1 A -1560mA V T On-state voltage I T = 40 A

- 1.4 1.75V V GT Gate trigger voltage V D = 12 V; I T = 0.1 A

-0.6 1.5V V D = V DRM(max); I T = 0.1 A; T j = 125 ˚C 0.250.4-V I D , I R

Off-state leakage current

V D = V DRM(max); V R = V RRM(max); T j = 125 ˚C

-0.2

1.0

mA

DYNAMIC CHARACTERISTICS

T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS

MIN.TYP.MAX.UNIT dV D /dt Critical rate of rise of V DM = 67% V DRM(max); T j = 125 ˚C;

200300-V/µs off-state voltage

exponential waveform gate open circuit t gt Gate controlled turn-on V D = V DRM(max); I G = 0.1 A; dI G /dt = 5 A/µs;-2-µs time

I TM = 40 A

t q

Circuit commutated V D = 67% V DRM(max); T j = 125 ˚C;

-70

-µs

turn-off time

I TM = 50 A; V R = 25 V; dI TM /dt = 30 A/µs;dV D /dt = 50 V/µs; R GK = 100 Ω