Implications of Quark-Lepton Symmetry for Neutrino Masses and Oscillations

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The Subleading Isgur-Wise Form Factor $chi_3(vcdot v')$ to Order $alpha_s$ in QCD Sum Rules

a rXiv:h ep-ph/9212266v116Dec1992SLAC–PUB–6017WIS–92/99/Dec–PH December 1992T/E The Subleading Isgur-Wise Form Factor χ3(v ·v ′)to Order αs in QCD Sum Rules Matthias Neubert Stanford Linear Accelerator Center Stanford University,Stanford,California 94309Zoltan Ligeti and Yosef Nir Weizmann Institute of Science Physics Department,Rehovot 76100,Israel We calculate the contributions arising at order αs in the QCD sum rule for the spin-symmetry violating universal function χ3(v ·v ′),which appears at order 1/m Q in the heavy quark expansion of meson form factors.In particular,we derive the two-loop perturbative contribution to the sum rule.Over the kinematic range accessible in B →D (∗)ℓνdecays,we ﬁnd that χ3(v ·v ′)does not exceed the level of ∼1%,indicating that power corrections induced by the chromo-magnetic operator in the heavy quark expansion are small.(submitted to Physical Review D)I.INTRODUCTIONIn the heavy quark eﬀective theory(HQET),the hadronic matrix elements describing the semileptonic decays M(v)→M′(v′)ℓν,where M and M′are pseudoscalar or vector mesons containing a heavy quark,can be systematically expanded in inverse powers of the heavy quark masses[1–5].The coeﬃcients in this expansion are m Q-independent,universal functions of the kinematic variable y=v·v′.These so-called Isgur-Wise form factors characterize the properties of the cloud of light quarks and gluons surrounding the heavy quarks,which act as static color sources.At leading order,a single functionξ(y)suﬃces to parameterize all matrix elements[6].This is expressed in the compact trace formula[5,7] M′(v′)|J(0)|M(v) =−ξ(y)tr{(2)m M P+ −γ5;pseudoscalar meson/ǫ;vector mesonis a spin wave function that describes correctly the transformation properties(under boosts and heavy quark spin rotations)of the meson states in the eﬀective theory.P+=1g s2m Q O mag,O mag=M′(v′)ΓP+iσαβM(v) .(4)The mass parameter¯Λsets the canonical scale for power corrections in HQET.In the m Q→∞limit,it measures theﬁnite mass diﬀerence between a heavy meson and the heavy quark that it contains[11].By factoring out this parameter,χαβ(v,v′)becomes dimensionless.The most general decomposition of this form factor involves two real,scalar functionsχ2(y)andχ3(y)deﬁned by[10]χαβ(v,v′)=(v′αγβ−v′βγα)χ2(y)−2iσαβχ3(y).(5)Irrespective of the structure of the current J ,the form factor χ3(y )appears always in the following combination with ξ(y ):ξ(y )+2Z ¯Λ d M m Q ′ χ3(y ),(6)where d P =3for a pseudoscalar and d V =−1for a vector meson.It thus eﬀectively renormalizes the leading Isgur-Wise function,preserving its normalization at y =1since χ3(1)=0according to Luke’s theorem [10].Eq.(6)shows that knowledge of χ3(y )is needed if one wants to relate processes which are connected by the spin symmetry,such as B →D ℓνand B →D ∗ℓν.Being hadronic form factors,the universal functions in HQET can only be investigated using nonperturbative methods.QCD sum rules have become very popular for this purpose.They have been reformulated in the context of the eﬀective theory and have been applied to the study of meson decay constants and the Isgur-Wise functions both in leading and next-to-leading order in the 1/m Q expansion [12–21].In particular,it has been shown that very simple predictions for the spin-symmetry violating form factors are obtained when terms of order αs are neglected,namely [17]χ2(y )=0,χ3(y )∝ ¯q g s σαβG αβq [1−ξ(y )].(7)In this approach χ3(y )is proportional to the mixed quark-gluon condensate,and it was estimated that χ3(y )∼1%for large recoil (y ∼1.5).In a recent work we have reﬁned the prediction for χ2(y )by including contributions of order αs in the sum rule analysis [20].We found that these are as important as the contribution of the mixed condensate in (7).It is,therefore,worthwhile to include such eﬀects also in the analysis of χ3(y ).This is the purpose of this article.II.DERIV ATION OF THE SUM RULEThe QCD sum rule analysis of the functions χ2(y )and χ3(y )is very similar.We shall,therefore,only brieﬂy sketch the general procedure and refer for details to Refs.[17,20].Our starting point is the correlatord x d x ′d ze i (k ′·x ′−k ·x ) 0|T[¯q ΓM ′P ′+ΓP +iσαβP +ΓM+Ξ3(ω,ω′,y )tr 2σαβ2(1+/v ′),and we omit the velocity labels in h and h ′for simplicity.The heavy-light currents interpolate pseudoscalar or vector mesons,depending on the choice ΓM =−γ5or ΓM =γµ−v µ,respectively.The external momenta k and k ′in (8)are the “residual”oﬀ-shell momenta of the heavy quarks.Due to the phase redeﬁnition of the eﬀective heavy quark ﬁelds in HQET,they are related to the total momenta P and P ′by k =P −m Q v and k ′=P ′−m Q ′v ′[3].The coeﬃcient functions Ξi are analytic in ω=2v ·k and ω′=2v ′·k ′,with discontinuities for positive values of these variables.They can be saturated by intermediate states which couple to the heavy-light currents.In particular,there is a double-pole contribution from the ground-state mesons M and M ′.To leading order in the 1/m Q expansion the pole position is at ω=ω′=2¯Λ.In the case of Ξ2,the residue of the pole is proportional to the universal function χ2(y ).For Ξ3the situation is more complicated,however,since insertions of the chromo-magnetic operator not only renormalize the leading Isgur-Wise function,but also the coupling of the heavy mesons to the interpolating heavy-light currents (i.e.,the meson decay constants)and the physical meson masses,which deﬁne the position of the pole.1The correct expression for the pole contribution to Ξ3is [17]Ξpole 3(ω,ω′,y )=F 2(ω−2¯Λ+iǫ) .(9)Here F is the analog of the meson decay constant in the eﬀective theory (F ∼f M√m QδΛ2+... , 0|j (0)|M (v ) =iF2G 2tr 2σαβΓP +σαβM (v ) ,where the ellipses represent spin-symmetry conserving or higher order power corrections,and j =¯q Γh (v ).In terms of the vector–pseudoscalar mass splitting,the parameter δΛ2isgiven by m 2V −m 2P =−8¯ΛδΛ2.For not too small,negative values of ωand ω′,the coeﬃcient function Ξ3can be approx-imated as a perturbative series in αs ,supplemented by the leading power corrections in 1/ωand 1/ω′,which are proportional to vacuum expectation values of local quark-gluon opera-tors,the so-called condensates [22].This is how nonperturbative corrections are incorporated in this approach.The idea of QCD sum rules is to match this theoretical representation of Ξ3to the phenomenological pole contribution given in (9).To this end,one ﬁrst writes the theoretical expression in terms of a double dispersion integral,Ξth 3(ω,ω′,y )= d νd ν′ρth 3(ν,ν′,y )1Thereare no such additional terms for Ξ2because of the peculiar trace structure associated with this coeﬃcient function.possible subtraction terms.Because of theﬂavor symmetry it is natural to set the Borel parameters associated withωandω′equal:τ=τ′=2T.One then introduces new variables ω±=12T ξ(y) F2e−2¯Λ/T=ω0dω+e−ω+/T ρth3(ω+,y)≡K(T,ω0,y).(12)The eﬀective spectral density ρth3arises after integration of the double spectral density over ω−.Note that for each contribution to it the dependence onω+is known on dimensionalgrounds.It thus suﬃces to calculate directly the Borel transform of the individual con-tributions toΞth3,corresponding to the limitω0→∞in(12).Theω0-dependence can be recovered at the end of the calculation.When terms of orderαs are neglected,contributions to the sum rule forΞ3can only be proportional to condensates involving the gluonﬁeld,since there is no way to contract the gluon contained in O mag.The leading power correction of this type is represented by the diagram shown in Fig.1(d).It is proportional to the mixed quark-gluon condensate and,as shown in Ref.[17],leads to(7).Here we are interested in the additional contributions arising at orderαs.They are shown in Fig.1(a)-(c).Besides a two-loop perturbative contribution, one encounters further nonperturbative corrections proportional to the quark and the gluon condensate.Let usﬁrst present the result for the nonperturbative power corrections.WeﬁndK cond(T,ω0,y)=αs ¯q q TT + αs GG y+1− ¯q g sσαβGαβq√y2−1),δn(x)=1(4π)D×1dλλ1−D∞λd u1∞1/λd u2(u1u2−1)D/2−2where C F=(N2c−1)/2N c,and D is the dimension of space-time.For D=4,the integrand diverges asλ→0.To regulate the integral,we assume D<2and use a triple integration by parts inλto obtain an expression which can be analytically continued to the vicinity of D=4.Next we set D=4+2ǫ,expand inǫ,write the result as an integral overω+,and introduce back the continuum threshold.This givesK pert(T,ω0,y)=−αsy+1 2ω0dω+ω3+e−ω+/T(16)× 12−23∂µ+3αs9π¯Λ,(17)which shows that divergences arise at orderαs.At this order,the renormalization of the sum rule is thus accomplished by a renormalization of the“bare”parameter G2in(12).In the9π¯Λ 1µ2 +O(g3s).(18)Hence a counterterm proportional to¯Λξ(y)has to be added to the bracket on the left-hand side of the sum rule(12).To evaluate its eﬀect on the right-hand side,we note that in D dimensions[17]¯Λξ(y)F2e−2¯Λ/T=3y+1 2ω0dω+ω3+e−ω+/T(19)× 1+ǫ γE−ln4π+2lnω+−ln y+12T ξ(y) F2e−2¯Λ/T=αsy+1 2ω0dω+ω3+e−ω+/T 2lnµ6+ y r(y)−1+ln y+1According to Luke’stheorem,theuniversalfunction χ3(y )vanishes at zero recoil [10].Evaluating (20)for y =1,we thus obtain a sum rule for G 2(µ)and δΛ2.It reads G 2(µ)−¯ΛδΛ224π3ω00d ω+ω3+e −ω+/T ln µ12 +K cond (T,ω0,1),(21)where we have used that r (1)=1.Precisely this sum rule has been derived previously,starting from a two-current correlator,in Ref.[16].This provides a nontrivial check of our ing the fact that ξ(y )=[2/(y +1)]2+O (g s )according to (19),we ﬁnd that the µ-dependent terms cancel out when we eliminate G 2(µ)and δΛ2from the sum rule for χ3(y ).Before we present our ﬁnal result,there is one more eﬀect which has to be taken into account,namely a spin-symmetry violating correction to the continuum threshold ω0.Since the chromo-magnetic interaction changes the masses of the ground-state mesons [cf.(10)],it also changes the masses of higher resonance states.Expanding the physical threshold asωphys =ω0 1+d M8π3 22 δ3 ω032π2ω30e −ω0/T 26π2−r (y )−ξ(y ) δ0 ω096π 248T 1−ξ(y ).It explicitly exhibits the fact that χ3(1)=0.III.NUMERICAL ANALYSISLet us now turn to the evaluation of the sum rule (23).For the QCD parameters we take the standard values¯q q =−(0.23GeV)3,αs GG =0.04GeV4,¯q g sσαβGαβq =m20 ¯q q ,m20=0.8GeV2.(24) Furthermore,we useδω2=−0.1GeV from above,andαs/π=0.1corresponding to the scale µ=2¯Λ≃1GeV,which is appropriate for evaluating radiative corrections in the eﬀective theory[15].The sensitivity of our results to changes in these parameters will be discussed below.The dependence of the left-hand side of(23)on¯Λand F can be eliminated by using a QCD sum rule for these parameters,too.It reads[16]¯ΛF2e−2¯Λ/T=9T4T − ¯q g sσαβGαβq4π2 2T − ¯q q +(2y+1)4T2.(26) Combining(23),(25)and(26),we obtainχ3(y)as a function ofω0and T.These parameters can be determined from the analysis of a QCD sum rule for the correlator of two heavy-light currents in the eﬀective theory[16,18].Oneﬁnds good stability forω0=2.0±0.3GeV,and the consistency of the theoretical calculation requires that the Borel parameter be in the range0.6<T<1.0GeV.It supports the self-consistency of the approach that,as shown in Fig.2,weﬁnd stability of the sum rule(23)in the same region of parameter space.Note that it is in fact theδω2-term that stabilizes the sum rule.Without it there were no plateau.Over the kinematic range accessible in semileptonic B→D(∗)ℓνdecays,we show in Fig.3(a)the range of predictions forχ3(y)obtained for1.7<ω0<2.3GeV and0.7<T< 1.2GeV.From this we estimate a relative uncertainty of∼±25%,which is mainly due to the uncertainty in the continuum threshold.It is apparent that the form factor is small,not exceeding the level of1%.2Finally,we show in Fig.3(b)the contributions of the individual terms in the sum rule (23).Due to the large negative contribution proportional to the quark condensate,the terms of orderαs,which we have calculated in this paper,cancel each other to a large extent.As a consequence,ourﬁnal result forχ3(y)is not very diﬀerent from that obtained neglecting these terms[17].This is,however,an accident.For instance,the order-αs corrections would enhance the sum rule prediction by a factor of two if the ¯q q -term had the opposite sign. From thisﬁgure one can also deduce how changes in the values of the vacuum condensates would aﬀect the numerical results.As long as one stays within the standard limits,the sensitivity to such changes is in fact rather small.For instance,working with the larger value ¯q q =−(0.26GeV)3,or varying m20between0.6and1.0GeV2,changesχ3(y)by no more than±0.15%.In conclusion,we have presented the complete order-αs QCD sum rule analysis of the subleading Isgur-Wise functionχ3(y),including in particular the two-loop perturbative con-tribution.Weﬁnd that over the kinematic region accessible in semileptonic B decays this form factor is small,typically of the order of1%.When combined with our previous analysis [20],which predicted similarly small values for the universal functionχ2(y),these results strongly indicate that power corrections in the heavy quark expansion which are induced by the chromo-magnetic interaction between the gluonﬁeld and the heavy quark spin are small.ACKNOWLEDGMENTSIt is a pleasure to thank Michael Peskin for helpful discussions.M.N.gratefully acknowl-edgesﬁnancial support from the BASF Aktiengesellschaft and from the German National Scholarship Foundation.Y.N.is an incumbent of the Ruth E.Recu Career Development chair,and is supported in part by the Israel Commission for Basic Research and by the Minerva Foundation.This work was also supported by the Department of Energy,contract DE-AC03-76SF00515.REFERENCES[1]E.Eichten and B.Hill,Phys.Lett.B234,511(1990);243,427(1990).[2]B.Grinstein,Nucl.Phys.B339,253(1990).[3]H.Georgi,Phys.Lett.B240,447(1990).[4]T.Mannel,W.Roberts and Z.Ryzak,Nucl.Phys.B368,204(1992).[5]A.F.Falk,H.Georgi,B.Grinstein,and M.B.Wise,Nucl.Phys.B343,1(1990).[6]N.Isgur and M.B.Wise,Phys.Lett.B232,113(1989);237,527(1990).[7]J.D.Bjorken,Proceedings of the18th SLAC Summer Institute on Particle Physics,pp.167,Stanford,California,July1990,edited by J.F.Hawthorne(SLAC,Stanford,1991).[8]M.B.Voloshin and M.A.Shifman,Yad.Fiz.45,463(1987)[Sov.J.Nucl.Phys.45,292(1987)];47,801(1988)[47,511(1988)].[9]A.F.Falk,B.Grinstein,and M.E.Luke,Nucl.Phys.B357,185(1991).[10]M.E.Luke,Phys.Lett.B252,447(1990).[11]A.F.Falk,M.Neubert,and M.E.Luke,SLAC preprint SLAC–PUB–5771(1992),toappear in Nucl.Phys.B.[12]M.Neubert,V.Rieckert,B.Stech,and Q.P.Xu,in Heavy Flavours,edited by A.J.Buras and M.Lindner,Advanced Series on Directions in High Energy Physics(World Scientiﬁc,Singapore,1992).[13]A.V.Radyushkin,Phys.Lett.B271,218(1991).[14]D.J.Broadhurst and A.G.Grozin,Phys.Lett.B274,421(1992).[15]M.Neubert,Phys.Rev.D45,2451(1992).[16]M.Neubert,Phys.Rev.D46,1076(1992).[17]M.Neubert,Phys.Rev.D46,3914(1992).[18]E.Bagan,P.Ball,V.M.Braun,and H.G.Dosch,Phys.Lett.B278,457(1992);E.Bagan,P.Ball,and P.Gosdzinsky,Heidelberg preprint HD–THEP–92–40(1992).[19]B.Blok and M.Shifman,Santa Barbara preprint NSF–ITP–92–100(1992).[20]M.Neubert,Z.Ligeti,and Y.Nir,SLAC preprint SLAC–PUB–5915(1992).[21]M.Neubert,SLAC preprint SLAC–PUB–5992(1992).[22]M.A.Shifman,A.I.Vainshtein,and V.I.Zakharov,Nucl.Phys.B147,385(1979);B147,448(1979).FIGURESFIG.1.Diagrams contributing to the sum rule for the universal form factorχ3(v·v′):two-loop perturbative contribution(a),and nonperturbative contributions proportional to the quark con-densate(b),the gluon condensate(c),and the mixed condensate(d).Heavy quark propagators are drawn as double lines.The square represents the chromo-magnetic operator.FIG.2.Analysis of the stability region for the sum rule(23):The form factorχ3(y)is shown for y=1.5as a function of the Borel parameter.From top to bottom,the solid curves refer toω0=1.7,2.0,and2.3GeV.The dashes lines are obtained by neglecting the contribution proportional toδω2.FIG.3.(a)Prediction for the form factorχ3(v·v′)in the stability region1.7<ω0<2.3 GeV and0.7<T<1.2GeV.(b)Individual contributions toχ3(v·v′)for T=0.8GeV and ω0=2.0GeV:total(solid),mixed condensate(dashed-dotted),gluon condensate(wide dots), quark condensate(dashes).The perturbative contribution and theδω2-term are indistinguishable in thisﬁgure and are both represented by the narrow dots.11。

物理专业英语词汇 Q

物理专业英语词汇 Q 物理专业英语词汇q物理专业英语词汇(q)qbranch q分支qmeter q值计qnumber q数qswitch q开关qswitchedlaser q控制器激光器qvalue q值quadrantelectrometer 象限静电计quadraticform 二次形式quadrupole 四极quadrupolecoupling 四极耦合quadrupoledeformation 四极畸变quadrupoleinteraction 四极相互酌quadrupolemagnet 四极磁铁quadrupolemoment 四极矩quadrupolemomentum 四极矩quadrupolequadrupoleforce 四极四极力quadrupoleradiation 四极电磁辐射quadrupoleresonance 四极共振quadrupoletransition 四极光子quadrupolevibration 四极振荡qualitativeanalysis 定性分析quantacon 光电倍增管quantitativeanalysis 定量分析quantitativespectralanalysis 定量光谱分析 quantity 量quantityofelectricity 电量quantityofflow 量thermocouplepyrometer热电偶高温计quantityofheat 热量quantityoflight 光量quantityofmotion 动量quantityofstate 状态量quantization 量子化quantizedfield 量子场quantizedsystem 量子化系统quantizedvortex 量子旋涡quantumanomaly 量子反常quantumbiology 量子生物学quantumchemistry 量子化学quantumchromodynamics 量子色动力学quantumcondition 量子条件quantumcosmology 量子宇宙学quantumcreationoftheuniverse 宇宙的量子产生 quantumdefect 量子筐quantumdefecttheory 量子筐理论quantumdisorderedsystem 量子无序系quantumefficiency 量子产额quantumelectrodynamics 量子电动力学quantumelectronics 量子电子学quantumenergy 量子能量quantumfield 量子场quantumfieldtheory 量子场论quantumfluctuation 量子涨落quantumfluid 量子铃quantumgravitation 量子引力quantumgravitationalfluctuation 量子引力差值 quantumgravity 量子引力quantumgroup 量子群quantumhalleffect 量子霍尔效应quantumhilbertspace 量子希耳伯空间quantumhypothesis 量子假说quantuminversescatteringmethod 量子逆反射法 quantumjump 量子跃迁quantumlatticemodel 量子图形模型quantumliquid 量子液体quantumlogic 量子逻辑quantummechanics 量子力学quantummontecarlomethod 量子蒙特卡罗法quantumnoise 量子噪声quantumnumber 量子数quantumoptics 量子光学quantumorbit 量子轨道quantumphysics 量子物理学quantumsizeeffect 量子尺寸效应quantumsolid 量子液态quantumsoliton 量子孤立子quantumstate 量子状态quantumstatisticalmechanics 量子统计力学 quantumstatistics 量子统计数据quantumtheory 量子论quantumtheoryoffield 量子场论quantumtheoryofgravity 引力场的量子论quantumtransition 量子光子quantumwell 量子势阱quantumwellopticalwaveguide 量子势阱光波导 quantumyield 量子产额quantumbrowwidth18fieldeng 量子quark 夸克quarkatom 夸克偶素quarkcondensate 夸克凝聚quarkconfinement 夸克禁锢quarkflavor 夸克味quarkgluonplasma 夸克胶子等离子体quarkleptonsymmetry 夸克轻子对称quarkmodel 夸克模型quarkstar 夸克星quarkonium 夸克偶素quarterwaveplate 四分之一波片quartet 四重态quartz 水晶quartzclock 石英钟quartzfibreelectroscope 石英丝验电器quartzglass 石英玻璃quartzmonochromator 水晶单色仪quartzoscillator 石英振荡器quartzplate 水晶片quasar 类星体thermocouplepyrometer热电偶高温计quasicrystal 科东俄晶体quasielasticforce 准弹性力quasielasticscattering 科东俄弹性散射quasiergodichypothesis 准脯历经假说quasifouriertransformhologram 科东俄傅里叶转换全息图 quasimolecularresonance 准分子共振quasimonochromaticlight 科东俄单色光quasistaticporcess 准静态过程quasistationaryelectriccurrent 准稳电流quasistationarystate 准稳态quasistellarobject 类星体quasistellarsource 类星射电源quasiviscouseffect 科东俄表面张力效应 quasianisotropy 类蛤异性quasimode 准模quasimolecule 准分子quasiparticle 科东俄粒子quasiparticletunnelling 准粒子隧道效应 quenching 点燃quenchingcircuit 熄灭电路quiescentprominence 宁静日珥quietsun 宁静太阳quintet 五重态。

PACSnumbers1215Ff,1130Hv,1210Dm,1125Mj…

a r X i v :0803.2889v 2 [h e p -p h ] 14 J u l 2008Mapping Out SU (5)GUTs with Non-Abelian Discrete Flavor SymmetriesFlorian Plentinger ∗and Gerhart Seidl †Institut f¨u r Physik und Astrophysik,Universit¨a t W¨u rzburg,Am Hubland,D 97074W¨u rzburg,Germany(Dated:December 25,2013)We construct a class of supersymmetric SU (5)GUT models that produce nearly tribimaximal lepton mixing,the observed quark mixing matrix,and the quark and lepton masses,from discrete non-Abelian ﬂavor symmetries.The SU (5)GUTs are formulated on ﬁve-dimensional throats in the ﬂat limit and the neutrino masses become small due to the type-I seesaw mechanism.The discrete non-Abelian ﬂavor symmetries are given by semi-direct products of cyclic groups that are broken at the infrared branes at the tip of the throats.As a result,we obtain SU (5)GUTs that provide a combined description of non-Abelian ﬂavor symmetries and quark-lepton complementarity.PACS numbers:12.15.Ff,11.30.Hv,12.10.Dm,One possibility to explore the physics of grand uniﬁed theories (GUTs)[1,2]at low energies is to analyze the neutrino sector.This is due to the explanation of small neutrino masses via the seesaw mechanism [3,4],which is naturally incorporated in GUTs.In fact,from the perspective of quark-lepton uniﬁcation,it is interesting to study in GUTs the drastic diﬀerences between the masses and mixings of quarks and leptons as revealed by current neutrino oscillation data.In recent years,there have been many attempts to re-produce a tribimaximal mixing form [5]for the leptonic Pontecorvo-Maki-Nakagawa-Sakata (PMNS)[6]mixing matrix U PMNS using non-Abelian discrete ﬂavor symme-tries such as the tetrahedral [7]and double (or binary)tetrahedral [8]groupA 4≃Z 3⋉(Z 2×Z 2)and T ′≃Z 2⋉Q,(1)where Q is the quaternion group of order eight,or [9]∆(27)≃Z 3⋉(Z 3×Z 3),(2)which is a subgroup of SU (3)(for reviews see, e.g.,Ref.[10]).Existing models,however,have generally dif-ﬁculties to predict also the observed fermion mass hierar-chies as well as the Cabibbo-Kobayashi-Maskawa (CKM)quark mixing matrix V CKM [11],which applies especially to GUTs (for very recent examples,see Ref.[12]).An-other approach,on the other hand,is oﬀered by the idea of quark-lepton complementarity (QLC),where the so-lar neutrino angle is a combination of maximal mixing and the Cabibbo angle θC [13].Subsequently,this has,in an interpretation of QLC [14,15],led to a machine-aided survey of several thousand lepton ﬂavor models for nearly tribimaximal lepton mixing [16].Here,we investigate the embedding of the models found in Ref.[16]into ﬁve-dimensional (5D)supersym-metric (SUSY)SU (5)GUTs.The hierarchical pattern of quark and lepton masses,V CKM ,and nearly tribi-maximal lepton mixing,arise from the local breaking of non-Abelian discrete ﬂavor symmetries in the extra-dimensional geometry.This has the advantage that theFIG.1:SUSY SU (5)GUT on two 5D intervals or throats.The zero modes of the matter ﬁelds 10i ,5H,24H ,and the gauge supermul-tiplet,propagate freely in the two throats.scalar sector of these models is extremely simple without the need for a vacuum alignment mechanism,while of-fering an intuitive geometrical interpretation of the non-Abelian ﬂavor symmetries.As a consequence,we obtain,for the ﬁrst time,a realization of non-Abelian ﬂavor sym-metries and QLC in SU (5)GUTs.We will describe our models by considering a speciﬁc minimal realization as an example.The main features of this example model,however,should be viewed as generic and representative for a large class of possible realiza-tions.Our model is given by a SUSY SU (5)GUT in 5D ﬂat space,which is deﬁned on two 5D intervals that have been glued together at a common endpoint.The geom-etry and the location of the 5D hypermultiplets in the model is depicted in FIG.1.The two intervals consti-tute a simple example for a two-throat setup in the ﬂat limit (see,e.g.,Refs.[17,18]),where the two 5D inter-vals,or throats,have the lengths πR 1and πR 2,and the coordinates y 1∈[0,πR 1]and y 2∈[0,πR 2].The point at y 1=y 2=0is called ultraviolet (UV)brane,whereas the two endpoints at y 1=πR 1and y 2=πR 2will be referred to as infrared (IR)branes.The throats are supposed to be GUT-scale sized,i.e.1/R 1,2 M GUT ≃1016GeV,and the SU (5)gauge supermultiplet and the Higgs hy-permultiplets 5H and2neously broken to G SM by a 24H bulk Higgs hypermulti-plet propagating in the two throats that acquires a vac-uum expectation value pointing in the hypercharge direc-tion 24H ∝diag(−12,13,15i ,where i =1,2,3is the generation index.Toobtainsmall neutrino masses via the type-I seesaw mechanism [3],we introduce three right-handed SU (5)singlet neutrino superﬁelds 1i .The 5D Lagrangian for the Yukawa couplings of the zero mode fermions then readsL 5D =d 2θ δ(y 1−πR 1) ˜Y uij,R 110i 10j 5H +˜Y d ij,R 110i 5H +˜Y νij,R 15j5i 1j 5H +M R ˜Y R ij,R 21i 1j+h.c. ,(3)where ˜Y x ij,R 1and ˜Y x ij,R 2(x =u,d,ν,R )are Yukawa cou-pling matrices (with mass dimension −1/2)and M R ≃1014GeV is the B −L breaking scale.In the four-dimensional (4D)low energy eﬀective theory,L 5D gives rise to the 4D Yukawa couplingsL 4D =d 2θ Y u ij 10i 10j 5H +Y dij10i 5H +Y νij5i ∼(q i 1,q i 2,...,q i m ),(5)1i ∼(r i 1,r i 2,...,r im ),where the j th entry in each row vector denotes the Z n jcharge of the representation.In the 5D theory,we sup-pose that the group G A is spontaneously broken by singly charged ﬂavon ﬁelds located at the IR branes.The Yukawa coupling matrices of quarks and leptons are then generated by the Froggatt-Nielsen mechanism [21].Applying a straightforward generalization of the ﬂavor group space scan in Ref.[16]to the SU (5)×G A represen-tations in Eq.(5),we ﬁnd a large number of about 4×102ﬂavor models that produce the hierarchies of quark and lepton masses and yield the CKM and PMNS mixing angles in perfect agreement with current data.A distri-bution of these models as a function of the group G A for increasing group order is shown in FIG.2.The selection criteria for the ﬂavor models are as follows:First,all models have to be consistent with the quark and charged3 lepton mass ratiosm u:m c:m t=ǫ6:ǫ4:1,m d:m s:m b=ǫ4:ǫ2:1,(6)m e:mµ:mτ=ǫ4:ǫ2:1,and a normal hierarchical neutrino mass spectrumm1:m2:m3=ǫ2:ǫ:1,(7)whereǫ≃θC≃0.2is of the order of the Cabibbo angle.Second,each model has to reproduce the CKM anglesV us∼ǫ,V cb∼ǫ2,V ub∼ǫ3,(8)as well as nearly tribimaximal lepton mixing at3σCLwith an extremely small reactor angle 1◦.In perform-ing the group space scan,we have restricted ourselves togroups G A with orders roughly up to 102and FIG.2shows only groups admitting more than three valid mod-els.In FIG.2,we can observe the general trend thatwith increasing group order the number of valid modelsper group generally increases too.This rough observa-tion,however,is modiﬁed by a large“periodic”ﬂuctu-ation of the number of models,which possibly singlesout certain groups G A as particularly interesting.Thehighly populated groups would deserve further system-atic investigation,which is,however,beyond the scopeof this paper.From this large set of models,let us choose the groupG A=Z3×Z8×Z9and,in the notation of Eq.(5),thecharge assignment101∼(1,1,6),102∼(0,3,1),103∼(0,0,0),52∼(0,7,0),52↔4FIG.3:Eﬀect of the non-Abelian ﬂavor symmetry on θ23for a 10%variation of all Yukawa couplings.Shown is θ23as a function of ǫfor the ﬂavor group G A (left)and G A ⋉G B (right).The right plot illustrates the exact prediction of the zeroth order term π/4in the expansion θ23=π/4+ǫ/√2and the relation θ13≃ǫ2.The important point is that in the expression for θ23,the leading order term π/4is exactly predicted by thenon-Abelian ﬂavor symmetry G F =G A ⋉G B (see FIG.3),while θ13≃θ2C is extremely small due to a suppression by the square of the Cabibbo angle.We thus predict a devi-ation ∼ǫ/√2,which is the well-known QLC relation for the solar angle.There have been attempts in the literature to reproduce QLC in quark-lepton uniﬁed models [26],however,the model presented here is the ﬁrst realization of QLC in an SU (5)GUT.Although our analysis has been carried out for the CP conserving case,a simple numerical study shows that CP violating phases (cf.Ref.[27])relevant for neutri-noless double beta decay and leptogenesis can be easily included as well.Concerning proton decay,note that since SU (5)is bro-ken by a bulk Higgs ﬁeld,the broken gauge boson masses are ≃M GUT .Therefore,all fermion zero modes can be localized at the IR branes of the throats without intro-ducing rapid proton decay through d =6operators.To achieve doublet-triplet splitting and suppress d =5pro-ton decay,we may then,e.g.,resort to suitable extensions of the Higgs sector [28].Moreover,although the ﬂavor symmetry G F is global,quantum gravity eﬀects might require G F to be gauged [29].Anomalies can then be canceled by Chern-Simons terms in the 5D bulk.We emphasize that the above discussion is focussed on a speciﬁc minimal example realization of the model.Many SU (5)GUTs with non-Abelian ﬂavor symmetries,however,can be constructed along the same lines by varying the ﬂavor charge assignment,choosing diﬀerent groups G F ,or by modifying the throat geometry.A de-tailed analysis of these models and variations thereof will be presented in a future publication [30].To summarize,we have discussed the construction of 5D SUSY SU (5)GUTs that yield nearly tribimaximal lepton mixing,as well as the observed CKM mixing matrix,together with the hierarchy of quark and lepton masses.Small neutrino masses are generated only by the type-I seesaw mechanism.The fermion masses and mixings arise from the local breaking of non-Abelian ﬂavor symmetries at the IR branes of a ﬂat multi-throat geometry.For an example realization,we have shown that the non-Abelian ﬂavor symmetries can exactly predict the leading order term π/4in the sum rule for the atmospheric mixing angle,while strongly suppress-ing the reactor angle.This makes this class of models testable in future neutrino oscillation experiments.In addition,we arrive,for the ﬁrst time,at a combined description of QLC and non-Abelian ﬂavor symmetries in SU (5)GUTs.One main advantage of our setup with throats is that the necessary symmetry breaking can be realized with a very simple Higgs sector and that it can be applied to and generalized for a large class of uniﬁed models.We would like to thank T.Ohl for useful comments.The research of F.P.is supported by Research Train-ing Group 1147“Theoretical Astrophysics and Particle Physics ”of Deutsche Forschungsgemeinschaft.G.S.is supported by the Federal Ministry of Education and Re-search (BMBF)under contract number 05HT6WWA.∗********************************.de †**************************.de[1]H.Georgi and S.L.Glashow,Phys.Rev.Lett.32,438(1974);H.Georgi,in Proceedings of Coral Gables 1975,Theories and Experiments in High Energy Physics ,New York,1975.[2]J.C.Pati and A.Salam,Phys.Rev.D 10,275(1974)[Erratum-ibid.D 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D.Carone and R.F.Lebed,Phys.Rev.D62,016009(2000);P.D.Carr and P.H.Frampton,arXiv:hep-ph/0701034;A.Aranda, Phys.Rev.D76,111301(2007).[9]I.de Medeiros Varzielas,S.F.King and G.G.Ross,Phys.Lett.B648,201(2007);C.Luhn,S.Nasri and P.Ramond,J.Math.Phys.48,073501(2007);Phys.Lett.B652,27(2007).[10]E.Ma,arXiv:0705.0327[hep-ph];G.Altarelli,arXiv:0705.0860[hep-ph].[11]N.Cabibbo,Phys.Rev.Lett.10,531(1963);M.Kobayashi and T.Maskawa,Prog.Theor.Phys.49, 652(1973).[12]M.-C.Chen and K.T.Mahanthappa,Phys.Lett.B652,34(2007);W.Grimus and H.Kuhbock,Phys.Rev.D77, 055008(2008);F.Bazzocchi et al.,arXiv:0802.1693[hep-ph];G.Altarelli,F.Feruglio and C.Hagedorn,J.High Energy Phys.0803,052(2008).[13]A.Y.Smirnov,arXiv:hep-ph/0402264;M.Raidal,Phys.Rev.Lett.93,161801(2004);H.Minakata andA.Y.Smirnov,Phys.Rev.D70,073009(2004).[14]F.Plentinger,G.Seidl and W.Winter,Nucl.Phys.B791,60(2008).[15]F.Plentinger,G.Seidl and W.Winter,Phys.Rev.D76,113003(2007).[16]F.Plentinger,G.Seidl and W.Winter,J.High EnergyPhys.0804,077(2008).[17]G.Cacciapaglia,C.Csaki,C.Grojean and J.Terning,Phys.Rev.D74,045019(2006).[18]K.Agashe,A.Falkowski,I.Low and G.Servant,J.HighEnergy Phys.0804,027(2008);C.D.Carone,J.Erlich and M.Sher,arXiv:0802.3702[hep-ph].[19]Y.Kawamura,Prog.Theor.Phys.105,999(2001);G.Altarelli and F.Feruglio,Phys.Lett.B511,257(2001);A.B.Kobakhidze,Phys.Lett.B514,131(2001);A.Hebecker and J.March-Russell,Nucl.Phys.B613,3(2001);L.J.Hall and Y.Nomura,Phys.Rev.D66, 075004(2002).[20]D.E.Kaplan and T.M.P.Tait,J.High Energy Phys.0111,051(2001).[21]C.D.Froggatt and H.B.Nielsen,Nucl.Phys.B147,277(1979).[22]Y.Nomura,Phys.Rev.D65,085036(2002).[23]H.Georgi and C.Jarlskog,Phys.Lett.B86,297(1979).[24]H.Arason et al.,Phys.Rev.Lett.67,2933(1991);H.Arason et al.,Phys.Rev.D47,232(1993).[25]D.S.Ayres et al.[NOνA Collaboration],arXiv:hep-ex/0503053;Y.Hayato et al.,Letter of Intent.[26]S.Antusch,S.F.King and R.N.Mohapatra,Phys.Lett.B618,150(2005).[27]W.Winter,Phys.Lett.B659,275(2008).[28]K.S.Babu and S.M.Barr,Phys.Rev.D48,5354(1993);K.Kurosawa,N.Maru and T.Yanagida,Phys.Lett.B 512,203(2001).[29]L.M.Krauss and F.Wilczek,Phys.Rev.Lett.62,1221(1989).[30]F.Plentinger and G.Seidl,in preparation.。

具有粗糙核的奇异积分算子的加权有界性

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具有粗糙核的奇异积分算子的加权有界性

半导体制造技术

Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons（不带电的中子）, positively charged protons（带正电的质子）in the nucleus and negatively charged electrons（带负电的核外电子） that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally（无心的） turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier（隔离阻障）is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。

普朗克等离子物理研究所：核聚变技术新进展

普朗克等离子物理研究所：核聚变技术新进展马克斯·普朗克等离子体物理研究所（Max Planck Institute for Plasma Physics）是一专门研究核聚变技术及其装置的物理研究所。

该研究所自1980年至1990年进行了ASDEX实验。

ASDEX，英文全称：Axially Symmetric Divertor Experiment，译为：轴对称偏滤器实验。

偏滤器（Divertor）是环形聚变装置，例如托卡马克的组成部分。

于1991年开始，该实验实施进行了升级，称为ASDEX Upgrade，译为：轴对称偏滤器实验升级版。

30年来，该升级设施一直为产生可持续能源的聚变发电厂铺平道路。

在此期间，该托卡马克聚变工厂进行了多次扩建和改进，提供了许多见解，这些见解已被整合到其他聚变工厂的设计和运营中。

例如，该升级团队为在英国的欧洲联合环（Joint European T orus，简称JET）测试工厂，和在法国的国际热核聚变实验堆计划（简称ITER）测试工厂的运行制定了方案，并为计划中的示范电厂进行了预测。

计划在2022年中期进行的转换旨在为将来的工厂做准备。

聚变研究的目标是开发一个对气候与环境友好的发电厂。

像太阳一样，其目的是从原子核的聚变中获取能量。

为此所用的燃料是极稀薄的离子化氢气等离子体。

为了点燃聚变，必须将等离子体封闭在几乎完全不接触的磁场中，并加热到1亿度以上。

为了调节热燃料与周围墙壁之间的相互作用，研究人员为Asdex 升级版配备了偏滤器，称为：轴向对称偏滤器。

通过附加的磁场，偏滤器场可以消除等离子体中的杂质，并改善其热绝缘性。

与其前身Asdex实验相比，Asdex升级版的等离子偏滤器和重要特性，尤其是密度和壁上的负载，更紧密地适应了将来的发电厂的条件。

配备了强大的等离子加热器和用于观察等离子的精密测量设备，Asdex升级版可用于开发潜在发电厂的运行模式。

等离子体容器的钨壁通过Asdex升级版，研究人员朝未来的聚变电厂迈出了重要的一步，他们用钨而不是碳覆盖等离子体容器的壁。

Signals of Doubly-Charged Higgsinos at the CERN Large Hadron Collider

DESY-08-060, IZTECH-P-08-03, CUMQ-HEP-149, HIP-2008-15/TH
Signals of Doubly-Charged Higgsinos at the CERN Large Hadron Collider
Durmu¸ s A. Demir1,2 , Mariana Frank3 , Katri Huitu4 , Santosh Kumar Rai4 , and Ismail Turan3
Department of Physics, Izmir Institute of Technology, IZTECH, TR35430 Izmir, Turkey. 2 Deutsches Elektronen - Synchrotron, DESY, D-22603 Hamburg, Germany. 3 Department of Physics, Concordia University, 7141 Sherbrooke Street West, Montreal, Quebec, CANADA H4B 1R6. and 4 Department of Physics, University of Helsinki and Helsinki Institute of Physics, P.O. Box 64, FIN-00014 University of Helsinki, Finland. Several supersymmetric models with extended gauge structures, motivated by either grand uniﬁcation or by neutrino mass generation, predict light doubly-charged Higgsinos. In this work we study productions and decays of doubly-charged Higgsinos present in left-right supersymmetric models, and show that they invariably lead to novel collider signals not found in the minimal supersymmetric model (MSSM) or in any of its extensions motivated by the µ problem or even in extra dimensional theories. We investigate their distinctive signatures at the Large Hadron Collider (LHC) in both pair– and single–production modes, and show that they are powerful tools in determining the underlying model via the measurements at the LHC experiments.

Ultra- and extremely high energy neutrino astronomy

2 Detection Principles and Scientiﬁc Goals
Underwater/ice neutrino telescopes (UNTs) represent a 3-D arrays of photomultipliers deployed deep in the lake, ocean or in the polar ice at the depth of 1 to 4 kilometers to provide with a shield against the sun and moon light background and background of atmospheric muons. Detection principle is based on registration of the Cherenkov photons emitted by charged leptons (including those emitted by secondaries produced along their way in the water or ice and by their decay products) which are generated in CC neutrino interactions νl N −C→C l X (see Fig. 1). Also hadronic showers produced in NC neutrino interactions νl N −N→C νl X inside UNT sensitive volume can be
MeV-range neutrino astronomy have been existing for forty years with two neutrino sources identiﬁed so far,

Search for a new state of matter – the Quark-Gluon Plasma一个物质–夸克胶子等离子体的新状态搜索 43

-- Fragmentation
-- multi-parton dynamics (recombination or coalescence or …)
-- Hydrodynamics (constituent quarks ? parton dynamics from gluons to constituent quarks? )
Nucleus-Nucleus Collisions and Volcanic Eruption
Volcanic high pT -- Strombolian eruption
Volcanic mediate pT – Spatter (clumps)
6
Volcanic low pT – Bulk matter flows
Evidence for Multi-parton Dynamics in Hadronization of Bulk Partonic Matter at RHIC
Huan Zhong Huang (黄焕中) Department of Physics and Astronomy
University of California Los Angeles
Rafelski+Danos, Molnar+Voloshin …..) Quark Recombination – (R.J. Fries et al, R. Hwa et al)
13
Constituent Quark Scaling
Constituent (n) Quark Scaling -- Meson n=2 and Baryon n=3 grouping
p td d td p N y d 2 1 π p td dtd p N 1 y i 12ic vo s ψ R () i)1( 0

斯仑贝谢所有测井曲线英文名称解释

斯仑贝谢所有测井曲线英文名称解释OCEAN DRILLING PROGRAMACRONYMS USED FOR WIRELINE SCHLUMBERGER TOOLS ACT Aluminum Clay ToolAMS Auxiliary Measurement SondeAPS Accelerator Porosity SondeARI Azimuthal Resistivity ImagerASI Array Sonic ImagerBGKT Vertical Seismic Profile ToolBHC Borehole Compensated Sonic ToolBHTV Borehole TeleviewerCBL Casing Bond LogCNT Compensated Neutron ToolDIT Dual Induction ToolDLL Dual LaterologDSI Dipole Sonic ImagerFMS Formation MicroScannerGHMT Geologic High Resolution Magnetic ToolGPIT General Purpose Inclinometer ToolGR Natural Gamma RayGST Induced Gamma Ray Spectrometry ToolHLDS Hostile Environment Lithodensity SondeHLDT Hostile Environment Lithodensity ToolHNGS Hostile Environment Gamma Ray SondeLDT Lithodensity ToolLSS Long Spacing Sonic ToolMCD Mechanical Caliper DeviceNGT Natural Gamma Ray Spectrometry ToolNMRT Nuclear Resonance Magnetic ToolQSST Inline Checkshot ToolSDT Digital Sonic ToolSGT Scintillation Gamma Ray ToolSUMT Susceptibility Magnetic ToolUBI Ultrasonic Borehole ImagerVSI Vertical Seismic ImagerWST Well Seismic ToolWST-3 3-Components Well Seismic ToolOCEAN DRILLING PROGRAMACRONYMS USED FOR LWD SCHLUMBERGER TOOLSADN Azimuthal Density-NeutronCDN Compensated Density-NeutronCDR Compensated Dual ResistivityISONIC Ideal Sonic-While-DrillingNMR Nuclear Magnetic ResonanceRAB Resistivity-at-the-BitOCEAN DRILLING PROGRAMACRONYMS USED FOR NON-SCHLUMBERGER SPECIALTY TOOLSMCS Multichannel Sonic ToolMGT Multisensor Gamma ToolSST Shear Sonic ToolTAP Temperature-Acceleration-Pressure ToolTLT Temperature Logging ToolOCEAN DRILLING PROGRAMACRONYMS AND UNITS USED FOR WIRELINE SCHLUMBERGER LOGSAFEC APS Far Detector Counts (cps)ANEC APS Near Detector Counts (cps)AX Acceleration X Axis (ft/s2)AY Acceleration Y Axis (ft/s2)AZ Acceleration Z Axis (ft/s2)AZIM Constant Azimuth for Deviation Correction (deg)APLC APS Near/Array Limestone Porosity Corrected (%)C1 FMS Caliper 1 (in)C2 FMS Caliper 2 (in)CALI Caliper (in)CFEC Corrected Far Epithermal Counts (cps)CFTC Corrected Far Thermal Counts (cps)CGR Computed (Th+K) Gamma Ray (API units)CHR2 Peak Coherence, Receiver Array, Upper DipoleCHRP Compressional Peak Coherence, Receiver Array, P&SCHRS Shear Peak Coherence, Receiver Array, P&SCHTP Compressional Peak Coherence, Transmitter Array, P&SCHTS Shear Peak Coherence, Transmitter Array, P&SCNEC Corrected Near Epithermal Counts (cps)CNTC Corrected Near Thermal Counts (cps)CS Cable Speed (m/hr)CVEL Compressional Velocity (km/s)DATN Discriminated Attenuation (db/m)DBI Discriminated Bond IndexDEVI Hole Deviation (degrees)DF Drilling Force (lbf)DIFF Difference Between MEAN and MEDIAN in Delta-Time Proc. (microsec/ft) DRH HLDS Bulk Density Correction (g/cm3)DRHO Bulk Density Correction (g/cm3)DT Short Spacing Delta-Time (10'-8' spacing; microsec/ft)DT1 Delta-Time Shear, Lower Dipole (microsec/ft)DT2 Delta-Time Shear, Upper Dipole (microsec/ft)DT4P Delta- Time Compressional, P&S (microsec/ft)DT4S Delta- Time Shear, P&S (microsec/ft))DT1R Delta- Time Shear, Receiver Array, Lower Dipole (microsec/ft)DT2R Delta- Time Shear, Receiver Array, Upper Dipole (microsec/ft)DT1T Delta-Time Shear, Transmitter Array, Lower Dipole (microsec/ft)DT2T Delta-Time Shear, Transmitter Array, Upper Dipole (microsec/ft)DTCO Delta- Time Compressional (microsec/ft)DTL Long Spacing Delta-Time (12'-10' spacing; microsec/ft)DTLF Long Spacing Delta-Time (12'-10' spacing; microsec/ft)DTLN Short Spacing Delta-Time (10'-8' spacing; microsec/ftDTRP Delta-Time Compressional, Receiver Array, P&S (microsec/ft)DTRS Delta-Time Shear, Receiver Array, P&S (microsec/ft)DTSM Delta-Time Shear (microsec/ft)DTST Delta-Time Stoneley (microsec/ft)DTTP Delta-Time Compressional, Transmitter Array, P&S (microsec/ft)DTTS Delta-Time Shear, Transmitter Array, P&S (microsec/ft)ECGR Environmentally Corrected Gamma Ray (API units)EHGR Environmentally Corrected High Resolution Gamma Ray (API units) ENPH Epithermal Neutron Porosity (%)ENRA Epithermal Neutron RatioETIM Elapsed Time (sec)FINC Magnetic Field Inclination (degrees)FNOR Magnetic Field Total Moment (oersted)FX Magnetic Field on X Axis (oersted)FY Magnetic Field on Y Axis (oersted)FZ Magnetic Field on Z Axis (oersted)GR Natural Gamma Ray (API units)HALC High Res. Near/Array Limestone Porosity Corrected (%)HAZI Hole Azimuth (degrees)HBDC High Res. Bulk Density Correction (g/cm3)HBHK HNGS Borehole Potassium (%)HCFT High Resolution Corrected Far Thermal Counts (cps)HCGR HNGS Computed Gamma Ray (API units)HCNT High Resolution Corrected Near Thermal Counts (cps)HDEB High Res. Enhanced Bulk Density (g/cm3)HDRH High Resolution Density Correction (g/cm3)HFEC High Res. Far Detector Counts (cps)HFK HNGS Formation Potassium (%)HFLC High Res. Near/Far Limestone Porosity Corrected (%)HEGR Environmentally Corrected High Resolution Natural Gamma Ray (API units) HGR High Resolution Natural Gamma Ray (API units)HLCA High Res. Caliper (inHLEF High Res. Long-spaced Photoelectric Effect (barns/e-)HNEC High Res. Near Detector Counts (cps)HNPO High Resolution Enhanced Thermal Nutron Porosity (%)HNRH High Resolution Bulk Density (g/cm3)HPEF High Resolution Photoelectric Effect (barns/e-)HRHO High Resolution Bulk Density (g/cm3)HROM High Res. Corrected Bulk Density (g/cm3)HSGR HNGS Standard (total) Gamma Ray (API units)HSIG High Res. Formation Capture Cross Section (capture units) HSTO High Res. Computed Standoff (in)HTHO HNGS Thorium (ppm)HTNP High Resolution Thermal Neutron Porosity (%)HURA HNGS Uranium (ppm)IDPH Phasor Deep Induction (ohmm)IIR Iron Indicator Ratio [CFE/(CCA+CSI)]ILD Deep Resistivity (ohmm)ILM Medium Resistivity (ohmm)IMPH Phasor Medium Induction (ohmm)ITT Integrated Transit Time (s)LCAL HLDS Caliper (in)LIR Lithology Indicator Ratio [CSI/(CCA+CSI)]LLD Laterolog Deep (ohmm)LLS Laterolog Shallow (ohmm)LTT1 Transit Time (10'; microsec)LTT2 Transit Time (8'; microsec)LTT3 Transit Time (12'; microsec)LTT4 Transit Time (10'; microsec)MAGB Earth's Magnetic Field (nTes)MAGC Earth Conductivity (ppm)MAGS Magnetic Susceptibility (ppm)MEDIAN Median Delta-T Recomputed (microsec/ft)MEAN Mean Delta-T Recomputed (microsec/ft)NATN Near Pseudo-Attenuation (db/m)NMST Magnetometer Temperature (degC)NMSV Magnetometer Signal Level (V)NPHI Neutron Porosity (%)NRHB LDS Bulk Density (g/cm3)P1AZ Pad 1 Azimuth (degrees)PEF Photoelectric Effect (barns/e-)PEFL LDS Long-spaced Photoelectric Effect (barns/e-)PIR Porosity Indicator Ratio [CHY/(CCA+CSI)]POTA Potassium (%)RB Pad 1 Relative Bearing (degrees)RHL LDS Long-spaced Bulk Density (g/cm3)RHOB Bulk Density (g/cm3)RHOM HLDS Corrected Bulk Density (g/cm3)RMGS Low Resolution Susceptibility (ppm)SFLU Spherically Focused Log (ohmm)SGR Total Gamma Ray (API units)SIGF APS Formation Capture Cross Section (capture units)SP Spontaneous Potential (mV)STOF APS Computed Standoff (in)SURT Receiver Coil Temperature (degC)SVEL Shear Velocity (km/s)SXRT NMRS differential Temperature (degC)TENS Tension (lb)THOR Thorium (ppm)TNRA Thermal Neutron RatioTT1 Transit Time (10' spacing; microsec)TT2 Transit Time (8' spacing; microsec)TT3 Transit Time (12' spacing; microsec)TT4 Transit Time (10' spacing; microsec)URAN Uranium (ppm)V4P Compressional Velocity, from DT4P (P&S; km/s)V4S Shear Velocity, from DT4S (P&S; km/s)VELP Compressional Velocity (processed from waveforms; km/s)VELS Shear Velocity (processed from waveforms; km/s)VP1 Compressional Velocity, from DT, DTLN, or MEAN (km/s)VP2 Compressional Velocity, from DTL, DTLF, or MEDIAN (km/s)VCO Compressional Velocity, from DTCO (km/s)VS Shear Velocity, from DTSM (km/s)VST Stonely Velocity, from DTST km/s)VS1 Shear Velocity, from DT1 (Lower Dipole; km/s)VS2 Shear Velocity, from DT2 (Upper Dipole; km/s)VRP Compressional Velocity, from DTRP (Receiver Array, P&S; km/s) VRS Shear Velocity, from DTRS (Receiver Array, P&S; km/s)VS1R Shear Velocity, from DT1R (Receiver Array, Lower Dipole; km/s) VS2R Shear Velocity, from DT2R (Receiver Array, Upper Dipole; km/s) VS1T Shear Velocity, from DT1T (Transmitter Array, Lower Dipole; km/s) VS2T Shear Velocity, from DT2T (Transmitter Array, Upper Dipole; km/s) VTP Compressional Velocity, from DTTP (Transmitter Array, P&S; km/s) VTS Shear Velocity, from DTTS (Transmitter Array, P&S; km/s)#POINTS Number of Transmitter-Receiver Pairs Used in Sonic Processing W1NG NGT Window 1 counts (cps)W2NG NGT Window 2 counts (cps)W3NG NGT Window 3 counts (cps)W4NG NGT Window 4 counts (cps)W5NG NGT Window 5 counts (cps)OCEAN DRILLING PROGRAMACRONYMS AND UNITS USED FOR LWD SCHLUMBERGER LOGSAT1F Attenuation Resistivity (1 ft resolution; ohmm)AT3F Attenuation Resistivity (3 ft resolution; ohmm)AT4F Attenuation Resistivity (4 ft resolution; ohmm)AT5F Attenuation Resistivity (5 ft resolution; ohmm)ATR Attenuation Resistivity (deep; ohmm)BFV Bound Fluid Volume (%)B1TM RAB Shallow Resistivity Time after Bit (s)B2TM RAB Medium Resistivity Time after Bit (s)B3TM RAB Deep Resistivity Time after Bit (s)BDAV Deep Resistivity Average (ohmm)BMAV Medium Resistivity Average (ohmm)BSAV Shallow Resistivity Average (ohmm)CGR Computed (Th+K) Gamma Ray (API units)DCAL Differential Caliper (in)DROR Correction for CDN rotational density (g/cm3).DRRT Correction for ADN rotational density (g/cm3).DTAB AND or CDN Density Time after Bit (hr)FFV Free Fluid Volume (%)GR Gamma Ray (API Units)GR7 Sum Gamma Ray Windows GRW7+GRW8+GRW9-Equivalent to Wireline NGT window 5 (cps) GRW3 Gamma Ray Window 3 counts (cps)-Equivalent to Wireline NGT window 1GRW4 Gamma Ray Window 4 counts (cps)-Equivalent to Wireline NGT window 2GRW5 Gamma Ray Window 5 counts (cps)-Equivalent to Wireline NGT window 3GRW6 Gamma Ray Window 6 counts (cps)-Equivalent to Wireline NGT window 4GRW7 Gamma Ray Window 7 counts (cps)GRW8 Gamma Ray Window 8 counts (cps)GRW9 Gamma Ray Window 9 counts (cps)GTIM CDR Gamma Ray Time after Bit (s)GRTK RAB Gamma Ray Time after Bit (s)HEF1 Far He Bank 1 counts (cps)HEF2 Far He Bank 2 counts (cps)HEF3 Far He Bank 3 counts (cps)HEF4 Far He Bank 4 counts (cps)HEN1 Near He Bank 1 counts (cps)HEN2 Near He Bank 2 counts (cps)HEN3 Near He Bank 3 counts (cps)HEN4 Near He Bank 4 counts (cps)MRP Magnetic Resonance PorosityNTAB ADN or CDN Neutron Time after Bit (hr)PEF Photoelectric Effect (barns/e-)POTA Potassium (%) ROPE Rate of Penetration (ft/hr)PS1F Phase Shift Resistivity (1 ft resolution; ohmm)PS2F Phase Shift Resistivity (2 ft resolution; ohmm)PS3F Phase Shift Resistivity (3 ft resolution; ohmm)PS5F Phase Shift Resistivity (5 ft resolution; ohmm)PSR Phase Shift Resistivity (shallow; ohmm)RBIT Bit Resistivity (ohmm)RBTM RAB Resistivity Time After Bit (s)RING Ring Resistivity (ohmm)ROMT Max. Density Total (g/cm3) from rotational processing ROP Rate of Penetration (m/hr)ROP1 Rate of Penetration, average over last 1 ft (m/hr).ROP5 Rate of Penetration, average over last 5 ft (m/hr)ROPE Rate of Penetration, averaged over last 5 ft (ft/hr)RPM RAB Tool Rotation Speed (rpm)RTIM CDR or RAB Resistivity Time after Bit (hr)SGR Total Gamma Ray (API units)T2 T2 Distribution (%)T2LM T2 Logarithmic Mean (ms)THOR Thorium (ppm)TNPH Thermal Neutron Porosity (%)TNRA Thermal RatioURAN Uranium (ppm)OCEAN DRILLING PROGRAMADDITIONAL ACRONYMS AND UNITS(PROCESSED LOGS FROM GEOCHEMICAL TOOL STRING)AL2O3 Computed Al2O3 (dry weight %)AL2O3MIN Computed Al2O3 Standard Deviation (dry weight %) AL2O3MAX Computed Al2O3 Standard Deviation (dry weight %) CAO Computed CaO (dry weight %)CAOMIN Computed CaO Standard Deviation (dry weight %) CAOMAX Computed CaO Standard Deviation (dry weight %) CACO3 Computed CaCO3 (dry weight %)CACO3MIN Computed CaCO3 Standard Deviation (dry weight %) CACO3MAX Computed CaCO3 Standard Deviation (dry weight %) CCA Calcium Yield (decimal fraction)CCHL Chlorine Yield (decimal fraction)CFE Iron Yield (decimal fraction)CGD Gadolinium Yield (decimal fraction)CHY Hydrogen Yield (decimal fraction)CK Potassium Yield (decimal fraction)CSI Silicon Yield (decimal fraction)CSIG Capture Cross Section (capture units)CSUL Sulfur Yield (decimal fraction)CTB Background Yield (decimal fraction)CTI Titanium Yield (decimal fraction)FACT Quality Control CurveFEO Computed FeO (dry weight %)FEOMIN Computed FeO Standard Deviation (dry weight %) FEOMAX Computed FeO Standard Deviation (dry weight %) FEO* Computed FeO* (dry weight %)FEO*MIN Computed FeO* Standard Deviation (dry weight %) FEO*MAX Computed FeO* Standard Deviation (dry weight %) FE2O3 Computed Fe2O3 (dry weight %)FE2O3MIN Computed Fe2O3 Standard Deviation (dry weight %) FE2O3MAX Computed Fe2O3 Standard Deviation (dry weight %) GD Computed Gadolinium (dry weight %)GDMIN Computed Gadolinium Standard Deviation (dry weight %) GDMAX Computed Gadolinium Standard Deviation (dry weight %) K2O Computed K2O (dry weight %)K2OMIN Computed K2O Standard Deviation (dry weight %)K2OMAX Computed K2O Standard Deviation (dry weight %) MGO Computed MgO (dry weight %)MGOMIN Computed MgO Standard Deviation (dry weight %) MGOMAX Computed MgO Standard Deviation (dry weight %)S Computed Sulfur (dry weight %)SMIN Computed Sulfur Standard Deviation (dry weight %) SMAX Computed Sulfur Standard Deviation (dry weight %)SIO2 Computed SiO2 (dry weight %)SIO2MIN Computed SiO2 Standard Deviation (dry weight %) SIO2MAX Computed SiO2 Standard Deviation (dry weight %) THORMIN Computed Thorium Standard Deviation (ppm) THORMAX Computed Thorium Standard Deviation (ppm)TIO2 Computed TiO2 (dry weight %)TIO2MIN Computed TiO2 Standard Deviation (dry weight %) TIO2MAX Computed TiO2 Standard Deviation (dry weight %) URANMIN Computed Uranium Standard Deviation (ppm) URANMAX Computed Uranium Standard Deviation (ppm) VARCA Variable CaCO3/CaO calcium carbonate/oxide factor。

外文翻译---基于离散混沌映射的图像加密并行算法

这种并行图像加密框架下，我们提出了一种新的算法，这是基于四个基本的转换。因此，我们将描述我们的算法之前，先介绍这些转换。
3.转换
3.1.A-转换
在A转换中，A代表加，能被形式化的定义如下：
a+b=c(1)
加法被定义为按位与操作
转换A有三个基本性质：
(2.1)a+a=0
(2.2)a+b=b+a(2)
(2.3)(a+b)+c=a+(b+c)
在并行模式计算时，许多的PE可以同时读取或写入相同的内存区域（即临界区），
这往往会导致意想不到的执行程序。因此，有必要在关键区域使用一些并行技术管理。
2.2.并行图像的加密框架
为了满足上述要求，我们提出了一个并行图像加密的框架，这是一个四个步骤的过程：
步骤1：整个图像被划分成若干块。
步骤2：每个PE负责确定数量块。一个区域内的像素可以充分使用有效的混乱和扩散进行操作加密。
附件C：译文
基于离散混沌映射的图像加密并行算法
摘要：
最近，针对图像加密提出了多种基于混沌的算法。然而，它们都无法在并行计算环境中有效工作。在本文中，我们提出了一个并行图像加密的框架。基于此框架内，一个使用离散柯尔莫哥洛夫流映射的新算法被提出。它符合所有并行图像加密算法的要求。此外，它是安全、快速的。这些特性使得它是一个很好的基于并行计算平台上的图像加密选择。
这个框架可以非常有效的实现整个图像的扩散。但是，它是不适合在并行计算环境中运行。这是因为当前像素的处理无法启动直到前一个像素已加密。即使有多个处理元素（PE），这种计算仍然是在一个串行模式下工作。此限制了其应用平台，因为许多基于FPGA / CPLD或者数字电路的设备可以支持并行处理。随着并行计算技术的应用，加密速度可以大大加快。

超新星核中的非奇异—奇异夸克物质相变

超新星核中的非奇异—奇异夸克物质相变
戴子高;彭秋和
【期刊名称】《天文学报》
【年(卷),期】1994(035)004
【摘要】最近Ｇｅｎｔｉｌｅ等研究了超新星核区从核物质到夸克物质的一级相变，沿着他们的工作，本文研究从两味夸克物质到三味夸克物质的相变过程，我们发现相变时标小于１０＾－７秒，超新星的中心温度和核区的中微子总能量明显增大，这不仅会增加超新星爆发的成功机会，而且会提高复活激波的能量，同时会影响新生中子星的冷却，核区存在Ｓｃｈｗａｒｚｓｃｈｉｌｄ对流。

【总页数】11页(P337-347)
【作者】戴子高;彭秋和
【作者单位】不详;不详
【正文语种】中文
【中图分类】P145.3
【相关文献】
1.密度依赖口袋参数下奇异夸克物质的热力学关系及奇异星 [J], 张翠英;杨兴强;包特木尔巴根
2.混合星物质的状态方程和奇异夸克物质的稳定窗 [J], 李昕;温新建
3.非奇异轻六夸克态的夸克势模型研究 [J], 陈文
4.非奇异轻六夸克态的夸克势模型研究 [J], 陈文
5.奇异夸克物质的夸克质量密度温度相关模型(英文) [J], 章赟;苏汝铿
因版权原因，仅展示原文概要，查看原文内容请购买。

Empirical processes of dependent random variables

2
Preliminaries
n i=1
from R to R. The centered G -indexed empirical process is given by (P n − P )g = 1 n
n
the marginal and empirical distribution functions. Let G be a class of measurabrocesses that have been discussed include linear processes and Gaussian processes; see Dehling and Taqqu (1989) and Cs¨ org˝ o and Mielniczuk (1996) for long and short-range dependent subordinated Gaussian processes and Ho and Hsing (1996) and Wu (2003a) for long-range dependent linear processes. A collection of recent results is presented in Dehling, Mikosch and Sorensen (2002). In that collection Dedecker and Louhichi (2002) made an important generalization of Ossiander’s (1987) result. Here we investigate the empirical central limit problem for dependent random variables from another angle that avoids strong mixing conditions. In particular, we apply a martingale method and establish a weak convergence theory for stationary, causal processes. Our results are comparable with the theory for independent random variables in that the imposed moment conditions are optimal or almost optimal. We show that, if the process is short-range dependent in a certain sense, then the limiting behavior is similar to that of iid random variables in that the limiting distribution is a Gaussian process and the norming √ sequence is n. For long-range dependent linear processes, one needs to apply asymptotic √ expansions to obtain n-norming limit theorems (Section 6.2.2). The paper is structured as follows. In Section 2 we introduce some mathematical preliminaries necessary for the weak convergence theory and illustrate the essence of our approach. Two types of empirical central limit theorems are established. Empirical processes indexed by indicators of left half lines, absolutely continuous functions, and piecewise diﬀerentiable functions are discussed in Sections 3, 4 and 5 respectively. Applications to linear processes and iterated random functions are made in Section 6. Section 7 presents some integral and maximal inequalities that may be of independent interest. Some proofs are given in Sections 8 and 9.

薛定谔—麦克斯韦尔方程径向解的存在性和多重性(英文)

In 1887, the German physicist Erwin Schrödinger proposed a radial solution to the Maxwell-Schrödinger equation. This equation describes the behavior of an electron in an atom and is used to calculate its energy levels. The radial solution was found to be valid for all values of angular momentum quantum number l, which means that it can describe any type of atomic orbital.The existence and multiplicity of this radial solution has been studied extensively since then. It has been shown that there are infinitely many solutions for each value of l, with each one corresponding to a different energy level. Furthermore, these solutions can be divided into two categories: bound states and scattering states. Bound states have negative energies and correspond to electrons that are trapped within the atom; scattering states have positive energies and correspond to electrons that escape from the atom after being excited by external radiation or collisions with other particles.The existence and multiplicity of these solutions is important because they provide insight into how atoms interact with their environment through electromagnetic radiation or collisions with other particles. They also help us understand why certain elements form molecules when combined together, as well as why some elements remain stable while others decay over time due to radioactive processes such as alpha decay or beta decay.。

奇异谱分析处理方法流程

奇异谱分析处理方法流程下载温馨提示:该文档是我店铺精心编制而成，希望大家下载以后，能够帮助大家解决实际的问题。

文档下载后可定制随意修改，请根据实际需要进行相应的调整和使用，谢谢!并且，本店铺为大家提供各种各样类型的实用资料，如教育随笔、日记赏析、句子摘抄、古诗大全、经典美文、话题作文、工作总结、词语解析、文案摘录、其他资料等等，如想了解不同资料格式和写法，敬请关注!Download tips: This document is carefully compiled by theeditor. I hope that after you download them,they can help yousolve practical problems. The document can be customized andmodified after downloading,please adjust and use it according toactual needs, thank you!In addition, our shop provides you with various types ofpractical materials,such as educational essays, diaryappreciation,sentence excerpts,ancient poems,classic articles,topic composition,work summary,word parsing,copy excerpts,other materials and so on,want to know different data formats andwriting methods,please pay attention!奇异谱分析处理方法流程。

1. 数据预处理：消除趋势和噪声。

正则化数据。

integral equation methods in scattering theory

Integral equation methods in scattering theory are a set of mathematical techniques used to analyze the interaction of waves with obstacles. These methods are essential in understanding the behavior of waves in complex media and in particular, in determining the scattering properties of objects.In scattering theory, the interaction of a wave with an obstacle is typically described using integral equations. These equations express the relationship between the scattered field and the incident field, as well as the properties of the obstacle itself. The most common integral equation method in scattering theory is the Lippmann-Schwinger equation.The Lippmann-Schwinger equation is a Fredholm integral equation that relates the scattered field to the incident field and the obstacle's scattering operator. It is derived from the conservation of energy and momentum in the scattering process. The equation provides a means to calculate the scattered field efficiently, given a known incident field and obstacle's scattering operator.Another important integral equation method in scattering theory is the Born approximation. The Born approximation is a perturbative method that approximates the exact solution of the Lippmann-Schwinger equation using a series expansion. It is useful when the obstacle's scattering operator is small compared to the incident field, allowing for an analytical solution of the scattering problem.In addition to these two methods, there are other integral equation techniques that can be used in scattering theory, such as the Rayleigh-Sommerfeld diffraction formula and the Kirchhoff integral formula. These methods are derived from different physical assumptions and are suitable for different types of scattering problems.Integral equation methods in scattering theory have found applications in various fields, including acoustics, electromagnetics, and quantum mechanics. Inacoustics, for example, these methods are used to study the scattering of sound waves by obstacles such as buildings or mountains. In electromagnetics, they are used to analyze the interaction of electromagnetic waves with conducting objects or dielectrics. In quantum mechanics, integral equation methods are used to study the scattering of particles by potentials or potentials.Integral equation methods in scattering theory provide a powerful tool for understanding wave interactions with obstacles. They allow for efficient calculations of scattered fields and provide insights into the physical properties of scattering systems. As such, these methods continue to play a crucial role in various fields of applied mathematics and physics.。

Finding community structure in networks using the eigenvectors of matrices

Finding community structure in networks using the eigenvectors of matrices
M. E. J. Newman
Department of Physics and Center for the Study of Complex Systems, University of Michigan, Ann Arbor, MI 48109–1040
We consider the problem of detecting communities or modules in networks, groups of vertices with a higher-than-average density of edges connecting them. Previous work indicates that a robust approach to this problem is the maximization of the beneﬁt function known as “modularity” over possible divisions of a network. Here we show that this maximization process can be written in terms of the eigenspectrum of a matrix we call the modularity matrix, which plays a role in community detection similar to that played by the graph Laplacian in graph partitioning calculations. This result leads us to a number of possible algorithms for detecting community structure, as well as several other results, including a spectral measure of bipartite structure in neteasure that identiﬁes those vertices that occupy central positions within the communities to which they belong. The algorithms and measures proposed are illustrated with applications to a variety of real-world complex networks.

量子化学波谱计算基本流程

量子化学波谱计算基本流程英文回答:Quantum chemistry spectroscopy calculations involve several steps to determine the electronic structure and properties of molecules. The basic workflow typically includes the following steps:1. Geometry optimization: This step involves determining the most stable structure of the molecule by minimizing its potential energy. Various optimization algorithms, such as the gradient descent method, are used to find the equilibrium geometry.2. Basis set selection: A basis set is a set of mathematical functions used to approximate the wavefunction of the molecule. The choice of basis set affects the accuracy and computational cost of the calculations. Commonly used basis sets include the Gaussian basis set and the plane wave basis set.3. Electronic structure calculation: The electronic structure of the molecule is determined by solving theSchrödinger equation. This is typically done using methods such as Hartree-Fock theory, density functional theory (DFT), or post-Hartree-Fock methods like configuration interaction (CI) or coupled cluster (CC) theory. These methods provide information about the molecular orbitals, electronic energies, and properties.4. Spectroscopic property calculation: Once the electronic structure is determined, various spectroscopic properties can be calculated. For example, the vibrational frequencies can be obtained by solving the equations of motion for the nuclei using methods like harmonic or anharmonic vibrational analysis. The rotational spectrum can be calculated using methods like rigid rotor approximation or rotational-vibrational analysis.5. Comparison with experimental data: The calculated spectroscopic properties can be compared with experimental data to validate the accuracy of the calculations. Thishelps in understanding the molecular structure and dynamics, and also in predicting and interpreting experimental spectra.中文回答：量子化学波谱计算的基本流程包括以下几个步骤：1. 几何优化，通过最小化分子的势能来确定其最稳定的结构。

核磁共振中常用的英文缩写和中文名称

NMR 中常用的英文缩写和中文名称收集了一些NMR 中常用的英文缩写,译出其中文名称,供初学者参考,不妥之处请指出,也请继续添加.相关附件NMR 中常用的英文缩写和中文名称APT Attached Proton Test 质子连接实验ASIS Aromatic Solvent Induced Shift 芳香溶剂诱导位移BBDR Broad Band Double Resonance 宽带双共振BIRD Bilinear Rotation Decoupling 双线性旋转去偶(脉冲)COLOC Correlated Spectroscopy for Long Range Coupling 远程偶合相关谱COSY ( Homonuclear chemical shift ) COrrelation SpectroscopY (同核化学位移)相关谱CP Cross Polarization 交叉极化CP/MAS Cross Polarization / Magic Angle Spinning 交叉极化魔角自旋CSA Chemical Shift Anisotropy 化学位移各向异性CSCM Chemical Shift Correlation Map 化学位移相关图CW continuous wave 连续波DD Dipole-Dipole 偶极-偶极DECSY Double-quantum Echo Correlated Spectroscopy 双量子回波相关谱DEPT Distortionless Enhancement by Polarization Transfer 无畸变极化转移增强2DFTS two Dimensional FT Spectroscopy 二维傅立叶变换谱DNMR Dynamic NMR 动态NMRDNP Dynamic Nuclear Polarization 动态核极化DQ(C) Double Quantum (Coherence) 双量子(相干)DQD Digital Quadrature Detection 数字正交检测DQF Double Quantum Filter 双量子滤波DQF-COSY Double Quantum Filtered COSY 双量子滤波COSYDRDS Double Resonance Difference Spectroscopy 双共振差谱EXSY Exchange Spectroscopy 交换谱FFT Fast Fourier Transformation 快速傅立叶变换FID Free Induction Decay 自由诱导衰减H,C-COSY 1H,13C chemical-shift COrrelation SpectroscopY 1H,13C 化学位移相关谱H,X-COSY 1H,X-nucleus chemical-shift COrrelation SpectroscopY 1H,X- 核化学位移相关谱HETCOR Heteronuclear Correlation Spectroscopy 异核相关谱HMBC Heteronuclear Multiple-Bond Correlation 异核多键相关HMQC Heteronuclear Multiple Quantum Coherence 异核多量子相干HOESY Heteronuclear Overhauser Effect Spectroscopy 异核Overhause 效应谱HOHAHA Homonuclear Hartmann-Hahn spectroscopy 同核Hartmann-Hahn 谱HR High Resolution 高分辨HSQC Heteronuclear Single Quantum Coherence 异核单量子相干INADEQUATE Incredible Natural Abundance Double Quantum Transfer Experiment 稀核双量子转移实验（简称双量子实验，或双量子谱）INDOR Internuclear Double Resonance 核间双共振INEPT Insensitive Nuclei Enhanced by Polarization 非灵敏核极化转移增强INVERSE H,X correlation via 1H detection 检测1H 的H,X 核相关IR Inversion-Recovery 反（翻）转回复JRES J-resolved spectroscopy J-分解谱LIS Lanthanide （chemical shift reagent ） Induced Shift 镧系（化学位移试剂）诱导位移LSR Lanthanide Shift Reagent 镧系位移试剂MAS Magic-Angle Spinning 魔角自旋MQ（C）Multiple-Quantum （ Coherence ）多量子（相干）MQF Multiple-Quantum Filter 多量子滤波MQMAS Multiple-Quantum Magic-Angle Spinning 多量子魔角自旋MQS Multi Quantum Spectroscopy 多量子谱NMR Nuclear Magnetic Resonance 核磁共振NOE Nuclear Overhauser Effect 核Overhauser 效应（NOE）NOESY Nuclear Overhauser Effect Spectroscopy 二维NOE 谱NQR Nuclear Quadrupole Resonance 核四极共振PFG Pulsed Gradient Field 脉冲梯度场PGSE Pulsed Gradient Spin Echo 脉冲梯度自旋回波PRFT Partially Relaxed Fourier Transform 部分弛豫傅立叶变换PSD Phase-sensitive Detection 相敏检测PW Pulse Width 脉宽RCT Relayed Coherence Transfer 接力相干转移RECSY Multistep Relayed Coherence Spectroscopy 多步接力相干谱REDOR Rotational Echo Double Resonance 旋转回波双共振RELAY Relayed Correlation Spectroscopy 接力相关谱RF Radio Frequency 射频ROESY Rotating Frame Overhauser Effect Spectroscopy 旋转坐标系NOE 谱ROTO ROESY-TOCSY Relay ROESY-TOCSY 接力谱SC Scalar Coupling 标量偶合SDDS Spin Decoupling Difference Spectroscopy 自旋去偶差谱SE Spin Echo 自旋回波SECSY Spin-Echo Correlated Spectroscopy 自旋回波相关谱SEDOR Spin Echo Double Resonance 自旋回波双共振SEFT Spin-Echo Fourier Tran sform Spectroscopy （with J modulati on）（J-调制）自旋回波傅立叶变换谱SELINCOR SELINQUATE SFORD SNR or S/NSelective Inverse Correlation 选择性反相关Selective INADEQUA TE 选择性双量子（实验）Single Frequency Off-Resonance Decoupling 单频偏共振去偶Signal-to-noise Ratio 信/ 燥比SQF Single-Quantum Filter 单量子滤波SRTCF TOCSY TORO TQF WALTZ-16 Saturation-Recovery 饱和恢复Time Correlation Function 时间相关涵数Total Correlation Spectroscopy 全(总)相关谱TOCSY-ROESY Relay TOCSY-ROESY 接力Triple-Quantum Filter 三量子滤波A broadband decoupling sequence 宽带去偶序列WATERGATE Water suppression pulse sequence 水峰压制脉冲序列WEFTZQ(C) ZQF T1T2 tmWater Eliminated Fourier Transform 水峰消除傅立叶变换Zero-Quantum (Coherence) 零量子相干Zero-Quantum Filter 零量子滤波Longitudinal (spin-lattice) relaxation time for MZ 纵向(自旋- 晶格)弛豫时间Transverse (spin-spin) relaxation time for Mxy 横向(自旋-自旋)弛豫时间T C rotational correlation time 旋转相关时间。