9 Electron beam lithography_3
计算机与网络用语中英翻译（三）_计算机英语词汇
electric polarization 电场偏极化,电极化electric transducer 电转换器electrical accounting machine 电动会计机electrical accounting machine (eam) 电动计算器，电子会计机electrical impulses 电脉冲electrical numerical integrator and calculator (eniac) 电子数字积分计算器electrically alterable memory 电可变内存electrically controlled birefringence lcd (ecb lcd) 利用电场控制的双折射液electrically erasable programmable read-only memory (eeprom) 电子抹除式唯electrically erasable read only memory (erom) 电可抹只读存储器electrically erasable rom (eerom) 电可抹只读记忆electro luminescent 电子发光体显示器electro static discharge 静电放电electro-optical effect 电子光学效应electrochromeric display 电路显示器electrochromeric display (ecds) 电铬显示器electrodeposition 电极沉淀electrodynamics 电动力学electroencephalograph 脑电波计,脑波仪electroflour 电萤石electrokinetics 动电学electrolysis 电解electromagnetic 电磁绒electromagnetic communications 电磁通信electromagnetic delay line 延电磁线electromagnetic disturvance 电波干扰electromagnetic relay 电磁继电器electromagnetic wave 电磁波electromechanical device 机电装置electromechanical printer 机电印字机electromechanical switching system 机电转换系统electromechanics 电机械学electrometallurgy 电冶学electron 电子electron beam fabrication 电子束制作electron beam lithography 电子束石版印刷术electron beam recording (ebr) 电子束记录electron camera 电子摄影机electron jet 电子射流electron lens 电子透镜electron mass 电子质量electron optics 电子光学electron paramagnetic resonance 电子顺磁谐振electron trap 电子陷阱electronic 电子的electronic accounting machines 电子会计机electronic automatic exchange (eax) 电子自动交换机electronic benefits transfer (ebt) 电子给付转帐electronic book 电子书electronic cash register 电子收款机electronic cash, e-cash 电子钱electronic certificate [e-cert] 电子证书electronic commerce (ec) 电子商务electronic commerce modelling language [ecml] 电子贸易模型语言electronic commerce [e-commerce] 电子贸易electronic conference 电子会议electronic data inter change (edi) 电子数据交换electronic data interchange (edi) 电子数据交换electronic data interchange (edi)) 电子数据交换electronic data interchange [edi] 电子数据联通electronic data interchange, edi 电子数据交换electronic data processing (edp) 电子数据处理electronic data processing system 电子数据处理系统electronic diary 电子记事本electronic differential analyzer 电子微分分析器electronic filing 电子存盘electronic frontier foundation (eff) 电子开拓基金会electronic funds transfer (eft) 电子金融转帐electronic funds transfer system (eftss) 电子财务转换系统electronic government [e-government] 电子政府electronic industries association, eia 电子工业协会electronic library 电子数据馆electronic mail (e-mail) 电子邮件electronic mail address 电子邮址electronic mail box 电子邮箱electronic mail network 电子传递网络electronic mail system software 电子邮递系统软件electronic mail [e-mail] 电子邮件electronic mail, e-mail 电子邮件electronic mailing 电子传递electronic message service (ems) 电子讯息服务electronic message system 电子讯息系统electronic messaging system 电子信息系统electronic neuron network simulation 电子神经网仿真electronic packaging 电子封装electronic post office 电子邮局electronic printer 电子印字机electronic publishing 电子出版electronic record 电子纪录electronic scales 电子秤electronic serial number (esn) 电子序号electronic service delivery [esd] 公共服务电子化electronic signature 电子签署electronic statistical machine 电子统计机electronic store 电子商店electronic stylus 光电笔electronic switch 电子开关electronic switching system (ess) 电子式交换系统electronic switching system, ess 电子交换系统electronic toll collection system (etcs) 电子收费系统electronic transaction 电子交易electronic transactions ordinance 电子交易条例electronic translator 电子译码器electronic tutor 电子教学机electronic wallet ,electronic purse(e-wallet) 电子钱包electronically alterable romm (earom) 电子可变只读存储器electronics 电子学electronics manufacturing services (ems) 电子制造服务业electronmagnetic compatibility (emc) 电磁兼容性electronmagnetic interfering (emi) 电磁干扰electronmagnetic stamina (esa) 电磁耐受性electronogen 电子产生electrontic design automation (eda) 电子设计自动化electrophotography 静电摄影electrostatic 静电electrostatic deflection 静电偏转electrostatic printer 静电印字机electrostatic screen 静电渡electrostatic separator 静电分离器electrostatic shield 静电屏electrostatic storage 静电储存器electrostatic tube 静电储存管electrostatic unit 静电制单位electrostatic voltmeter 静电伏特计electrostatic wattmeter 静电瓦特计electrostatics 静电学electrostriction 电伸缩现象,电致伸缩element 元素element (elem,elt) 元素,组件element declaration 元素宣告element expression 组件表式element set 元素集element structure 元素结构element type 元素型别element type definition 元素型别定义element type parameter 元素型别参数element variable 组件变量elementary item 基本项elevation movement 升降移动elevation sensor 升降感应器elevator motor 升降马达elevator sensor 升降感应器eleven punch 十一孔elimination factor 消除因素elimination zero 消零ellipse tool 椭圆形工具else clause 「否则」子叙句else rule 其它规则elt 元素,组件em 介末字符emacs emacsemail hosting 电子邮件主机email program 信件软件embed 内嵌embedded 嵌入embedded (database) language 嵌入 [ 数据库 ] 语言embedded item 内嵌项目embedded object 内嵌物件embedded pointers 嵌入指标embedded software 嵌入式软件embedded system 嵌入式系统embeded servo system 内嵌式伺服系统emboldening 加强强调emboss 浮雕embossed plate printer 突版印字机embossment 浮凸文件emergency button 紧急钮emergency disk 救援磁盘emergency maintenance 紧急维护emergency maintenance time 紧急维护时间emergency response system (ers) 紧急应变系统emergency switch 焚急开关emission 发射emittance 发射量emitter pulse 定列发射脉波emitter-coupled logic (ecl) 射极耦合逻辑emitter-coupled logic advantage 射极耦合逻辑优点emm 扩充内存管理程序emma emma绘图芯片emoticon 表情图示emotion 表情符号emphasis 强调empirical 实验的,经验的empty 清空empty link set 空链接集empty map 空对照empty medium 空媒体empty recycle bin 清空资源回收筒empty set 空集empty string 空串行ems 扩充内存系统ems electronics manufacturing services provider 专业合约代工厂emulate 模拟emulation 仿真emulation testing 模仿测试emulator 仿真器emulator generation 模仿器运转emulsion-laser storage 乳剂雷射储存器enable 启用enable pulse 起动脉冲enable single-click url navigation 启用按一下方式的 url 巡览enabled 启用状态; 致能enabled module 复动模块enabled page fault 复原寻页缺失enablenet 能网enabling signal 促成信号enabling workflow services on an existing database 在现有的数据库启用工作流程enabling technology 促成科技encapsulate 封装encapsulated interface pointer 封装的接口指针encapsulation 封包encipher 编密encipher, encipter 加密，译成密码enciphered data 编密资料enclosed class 被封入类别enclosing class 外围类别enclosing tag 封入标记enclosing type 封入类型enclosure 封闭encode 编码encoded 编码encoded point 编码点encoded question 编码问题encoder 编码器encoding 字集码encoding header 字集标头encoding strip 编码带encompassed type 被内含类型encompassing type 内含类型encrypt 加密encrypted trigger 加密的触发程序encryption 加密encryption scheme 加密方法encryption schemes 加密机制end 终止end around carry 端回进位end around shift 端回移位end caps 结束端点end distortion 端点失真end instrument 终端仪器end mart 端标end of address (eoa) 地址终端end of block (eob) 成块终端end of data 资料终端end of data indicator 资料终端指示器end of file 档案结尾end of file label (eof label) 文件尾标记end of form 表格终端end of line 列终端,行终端end of message code (eom code) 讯息终端码end of run routine 运转终端例程end of transmission 传毕码end office 端局end point 终点,终端end printing 终端印字end statement 终结叙述end time 时间终点end track 终点轨段end user 使用者end user computing 终端用户电脑应用end user license agreement 使用者授权合约 (eula)end-around borrow 端回借位end-data symbol 数据终端符号end-entity initialization services 终端实体启始服务end-of-file indicator 檔尾指示器end-of-file mark 档尾标示end-of-file spot 档尾点end-of-medium (em character) 介末字符end-of-message 讯息终端end-of-record word 记录终端字end-of-tape mark (eot mark) 带尾标志end-of-tape or end-of-file routines 带终端例程或文件终端当式end-of-tape warning 带尾警示end-of-text character (etx character) 文末字符end-of-transmission (eot) 传毕号end-of-transmission character (eot character) 传毕字符end-of-transmission-block character (etb character) 传输块末字符end-of-volume eov label 卷尾标记end-tag 结束标签end-to-end responsibility 端间责任end-to-end signaling 端间作信end-use device 终端装置end-user (eu) 最终用户endian 元组排列顺序ending file label 文件尾标记ending frame 终点帧ending point 终点ending tape label 带尾标记endness loop 无尽止循环endorser 背书人energizer 激励程序,激励机energy level diagram 能阶固energy star 能源之星engineer 工程师engineered capacity 工程容量engineering and administration data acquisition system (eadas) 工程与经营管engineering communication or telephone 工程通信或电话engineering graphics 工程制固学engineering planning and analysis systems (eplans) 工程计划与分析系统engineering time 工程时间engineering work order 工程工作订单english (australia) 英文 (澳大利亚)english (belize) 英文 (贝里斯)english (britain) 英文 (英国)english (canada) 英文 (加拿大)english (carribean) 英文 (加勒比海)english (ireland) 英文 (爱尔兰)english (jamaica) 英文 (牙买加)english (new zealand) 英文 (纽西兰)english (philippines) 英文 (菲律宾)english (south africa) 英文 (南非)english (trinidad) 英文 (千里达)english (united kingdom) 英文 (英国)english (united states) 英文 (美国)english (zimbabwe) 英文 (津巴布韦)enhanced expanded memory specification (eems) 增强扩充内存规格enhanced full rate speed encoding (efr) 增强型全速率编码功能enhanced ide 加强式ide接口enhanced keyboard 加强型键盘enhanced metafile 加强型中继档案enhanced private switched communication service (epscs) 严密私用交换通信服eniac 电子数值积分计算器enlarge 放大enlargement 放大enqueue 储入队列enquiry character (enq) 询问字符enter 输入enter / return key 回车键enter key 进入键enter/inquiry mode 输入/询问模态enterprise application integration 企业应用系统整合eaienterprise application integration (eai) 企业信息应用整合enterprise data modelling 企业数据模型enterprise edition 企业版enterprise information portal (eip) 企业信息入口网站enterprise number 企业叫号enterprise resource planning (erp) 企业资源规划enterprise resource planning [erp] 企业资源规划enterprise storage network (esn) 企业储存网络enterprise system connection, escon 企业系统连接entertaining 娱乐片entire project 整个专案entity 实体entity declaration 实体宣告entity end 实体结束entity end signal 实体结束讯号entity indentifier 实礼识别码entity manager 实体管理者entity reference 实体参引entity set 实体集entity structure 实体结构entity text 实体文字entity－relationship diagram (erd) 实体关系图entrance 进入口entropy 焰entry 项目entry block 进入块,输入块entry conditions 进入条件entry constant 进入常数entry expression 输入表示entry instruction 进入指令entry name 进入名称entry point 进入点entry symbol 进入符号entry time 馈入时间,输入时间entry variable 款目变数enu chtenum 列举型别enum-type 列举类型enumerate 列举enumerated property 列举内容enumeration 列举类型enumerator 列举值(元)envelope 分封线envelope delay distortion 波封延迟畸变environment 环境environment (of a label constant) 标记常数环境情况environment description on statement 环境设备描述陈述environment division 环境章节environment variable 环境变量eof eofeol 文字列结尾epa, environmental protection agency 环境保护局epilog 收场epilog code 终解程序代码epitaxial film 外延薄膜epitaxial growth 晶膜生长epitaxial growth process 外延生长过程epitaxial-growth mesa transistor 晶膜生长台面晶体管epitome 波缩epop 电子采购点epos 电子型录式销售点管理系统epp 加强型并行端口eprom erasable &programmable rom 可消除可程序只读存储器eprom, erasable programmable read only memory 可删可编程只读存储器eps eps档案格式epson 爱普生equal gain combiner 等增益组合器equal zero indicator 等零指示器equality 相等,同等equality circuit 相等电路equality gate 相等问equality operator 等号运算子equality unit 相等单元equalization 等化,均化equalizer 均衡器equals 相等,等于equation solver 方程式解答器equation typesetting 等式翻印equijoin 等联结equipment 通信文字处理设备equipment (eqpt,equip) 设备equipment charge 设备收费equipment clock 设备时钟equipment compatibility 设备兼容性equipment failure 失效设备equipment installation 安装设备equipment output 轮出设备equipment relocation 迁移设备equipment side 装备边equivalence 等价equivalence element 等值组件equivalence gate 等效闸equivalence operation 等值运算equivalent binary digit factor 等效二进数字因素equivalent binary digits 等效二进制数位equivalent four-wire system 等效四线系统equivalent reference string 对等参引串equivalent to element 相等组件equivalent-to element 等效组件equivocation 收发讯息差异erasability 可抹除性erasable 可抹除的erasable programmable read-only memory (eprom) 抹除式只读存储器erasable programmable read-only memory, eprom 消除式可程序只读存储器erasable storage 可擦储存器erase 抹除erase diskette 抹除磁盘erase head 抹除头erase the selection 清除所选的范围eraser tool 橡皮擦工具erasibility 擦拭率ergonomics 人机工程学,人体工学eripheral interface adapter(pia) 外围接口配接器eripheral interface channel 外围接口信道erlang 欧兰,占线小时erlang b 欧兰 berlang c 欧兰cerotic 色情片erp system 企业资源规划系统err object err 物件erroneous execution 错误性执行error 错误error (err) 误差,错error ambiguity 误差含糊error burst 误差丛发error check 错误检查error checking 错误检查error checking and correcting 误差校验error checking and correction (ecc) 误差核对与改正error checking and recovery 误差核对与复原error code 误差码error condition 误差状态error condition statement 误差状态叙述error control 误差控制error correcting system 改误系统error correction 错误更正error detecting and feedback system 侦误与反馈系统error detecting code 侦误码error detecting system 侦误系统error detection (transmission) 侦误error detection and correction (edac) 错误检测校正error detection routine 侦误例程error diagnostics 诊断误差error handler 错误处理例程error handling 误差处理error indicator (ei) 误差指示器error interrupts 误差岔断error list 误差列表error logging 错误登录error message 误差信息error messages 错误讯息error number 错误代号error object error 物件error range 误差范围error rate 误差率error ratio 误差比error record 误差记录error recovery 误差复原error recovery procedures (erp) 误差复原程序error recovery routine [procedure] 误差复原例程 [ 程序 ]error routine 误差例程error signal 误差信号error span 误差全距error tape 示误带error-checking code 核误码error-control character 误差控制字符error-correcting code 改误码error-correction routine 改误例程error-correction submode 改误次模态error-free program 无误差程式errors catastrophic 大量误差errors execution (remote computing sy) 执行误差,遥程计算系统ers 紧急应变系统es 额外区段esc esc控制字符esc key 逸位键,略过键escape 逸出,逸出号escape character 逸出字符escape character (esc) 逸出字符escape character esc 逸出字符escape code 逸出码escape sequence 逸出序列escape sequence esc 控制序列escape value 逸出值esdi 加强型小型设备界面esi communications (externally specifi) 外指数通信esn 电子序号espresso 口袋型计算机estonian 爱沙尼亚文esupplychain e商网etched 蚀刻etched horz 横刻etched printed circuit 蚀刻印刷电路etched vert 直刻eten 倚天ethernet 以太网ethiopic 衣索比亚文eticket 电子机票eudora eudora程序eudora lite 爱多拉邮递软件eula 使用者授权合约书european telecommunication standards institute, etsi 欧洲电信标准协会eutectic bond 共晶会接evaluate 评估evaluate statement 评估陈述式evaluation 求值,评估event 事件event bubbling 事件反升event chain 事件链,本件系列event control block (ecb) 事件控制段event handler 事件处理例程event interface 事件界面event listener 事件接听项event log 事件日志档案event map 事件对映event mask 事件屏蔽event object 事件对象event pair high event pair highevent pair low event pair lowevent posting 事件安置event procedure 事件程序event registration 事件注册项event response objects 事件响应对象event scheme 事件方案event script procedure 事件脚本步骤event sensing card 事件感应卡event sink 事件接收event sink map 事件接收对映event sinking 事件接收event source 事件来源event variable 事件变量event-control block (ecb) 事件控制块event-driven 事件驱动event-driven programming 事件驱动程序设计event-handling procedure 事件处理步骤event-ready 事件就绪event-ready object 事件就绪对象event-sinking 事件接收evidence set 辨识项集eworld 电子世界exaclink exaclinkexample 范例example page 范例页exceed capacity 超容量excel excel电子表格软件except gate 除外闸except operation 例外运算exception 例外exception declaration 异常宣告exception handler 异常处理例程exception handling 异常处理exception handling unwinding 异常处理回溯exception message 例外讯息exception principle system 例外原理系统exception reporting 例外报告exception scheduling routine 例外排程例程exception specification 异常规格exception-item encoder 例外项目编码器exceptions 例外excess 64 binary notation 二进制标记超六十四码excess fifty 加五十磅excess-three code 加三码exchange 交换,交换机,交换所exchange area 交换区域exchange area facilities 交换区设施exchange buffering 交换缓冲exchange classes 交换所等级exchange device remote computing system 远距离计算系统交换装置exchange network facilities for interstate access (enfia) 州际存取交换网络设exchange service 交换服务exchange sort 交换排序exchange test string 交换测试串exchangeable disk storage (eds) 可交换磁盘储存器exclusion 互斥exclusions 除外exclusive mode 独占模式exclusive nor 互斥(非门)exclusive or 互斥或exclusive reference 互斥参考exclusive segments 互斥段exclusive-or element 互斥或组件exclusive-or function 互斥或作用exclusive-or gate 互斥或门excute bar 执行列exe 可执行档的格式exe project 可执行档案项目exec statements 执行叙述execunet 执行网络executable 可执行的executable bytes 可执行字节executable file 可执行档案executable machine code 可执行的机器码executable program 可执行程序executable statement 可执行叙述execute 执行execute (ex, exec) 执行execute cycle 执行循环execute key 执行键execute phase 执行相execute statement (exec statement) 执行叙述execution 执行execution character set 执行字符集execution cycle 执行周execution delay 执行延迟execution error detection 执行误差侦测execution file 执行档execution of an instruction 指令执行execution path 执行路径execution time (e-time) 执行时间executive command 执行命令executive communications 执行通信executive control statement 执行控制叙述executive deck 轨行迭卡executive diagnostic system 执行诊断系统executive dumping 执行程序倾印executive facilities assignment 执行设备指定executive file 执行档案executive guard mode 执行保护模态,执行警戒模态executive information system [eis] 行政资讯系统executive instruction 执行指令executive language 执行语言executive program 执行程序executive routine 执行例程executive schedule maintenance 执行定期维护executive supervisor 执行监督器executive system 执行系统executive system control 执行系统控制executive system routine 执行系统例程executive system utilities 执行系统公用程序executive system utility 执行系统公用程序executive termination 执行终端executive-control utility routines 执行控制公用例程exerciser 监督执行程序exercisers 操作监督器exhaustivity 彻查。
半导体一些术语的中英文对照
半导体一些术语的中英文对照离子注入机 ion implanterLSS理论 Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。
沟道效应 channeling effect射程分布 range distribution深度分布 depth distribution投影射程 projected range阻止距离 stopping distance阻止本领 stopping power标准阻止截面 standard stopping cross section退火 annealing激活能 activation energy等温退火 isothermal annealing激光退火 laser annealing应力感生缺陷 stress-induced defect择优取向 preferred orientation制版工艺 mask-making technology图形畸变 pattern distortion初缩 first minification精缩 final minification母版 master mask铬版 chromium plate干版 dry plate乳胶版 emulsion plate透明版 see-through plate高分辨率版 high resolution plate, HRP超微粒干版 plate for ultra-microminiaturization 掩模 mask掩模对准 mask alignment对准精度 alignment precision光刻胶 photoresist又称“光致抗蚀剂”。
负性光刻胶 negative photoresist正性光刻胶 positive photoresist无机光刻胶 inorganic resist多层光刻胶 multilevel resist电子束光刻胶 electron beam resistX射线光刻胶 X-ray resist刷洗 scrubbing甩胶 spinning涂胶 photoresist coating后烘 postbaking光刻 photolithographyX射线光刻 X-ray lithography电子束光刻 electron beam lithography离子束光刻 ion beam lithography深紫外光刻 deep-UV lithography光刻机 mask aligner投影光刻机 projection mask aligner曝光 exposure接触式曝光法 contact exposure method接近式曝光法 proximity exposure method光学投影曝光法 optical projection exposure method 电子束曝光系统 electron beam exposure system分步重复系统 step-and-repeat system显影 development线宽 linewidth去胶 stripping of photoresist氧化去胶 removing of photoresist by oxidation等离子［体］去胶 removing of photoresist by plasma 刻蚀 etching干法刻蚀 dry etching反应离子刻蚀 reactive ion etching, RIE各向同性刻蚀 isotropic etching各向异性刻蚀 anisotropic etching反应溅射刻蚀 reactive sputter etching离子铣 ion beam milling又称“离子磨削”。
八大半导体工艺顺序剖析
八大半导体工艺顺序剖析八大半导体工艺顺序剖析在现代科技领域中，半导体材料和器件扮演着重要的角色。
作为电子设备的基础和核心组件，半导体工艺是半导体制造过程中不可或缺的环节。
有关八大半导体工艺顺序的剖析将会有助于我们深入了解半导体制造的工作流程。
本文将从简单到复杂，逐步介绍这八大工艺的相关内容。
1. 排版工艺（Photolithography）排版工艺是半导体制造过程中的首要步骤。
它使用光刻技术，将设计好的电路图案转移到硅晶圆上。
排版工艺需要使用光刻胶、掩膜和曝光设备等工具，通过逐层叠加和显影的过程，将电路图案转移到硅晶圆上。
2. 清洗工艺（Cleaning）清洗工艺在排版工艺之后进行，用于去除光刻胶和其他污染物。
清洗工艺可以采用化学溶液或高纯度的溶剂，保证硅晶圆表面的干净和纯净。
3. 高分辨率电子束刻蚀（High-Resolution Electron BeamLithography）高分辨率电子束刻蚀是一种先进的制造技术。
它使用电子束在硅晶圆表面进行刻蚀，以高精度和高分辨率地制作微小的电路图案。
4. 电子束曝光系统（Electron Beam Exposure Systems）电子束曝光系统是用于制造高分辨率电子束刻蚀的设备。
它具有高能量电子束发射器和复杂的控制系统，能够精确控制电子束的位置和强度，实现微米级别的精细曝光。
5. 高能量离子注入（High-Energy Ion Implantation）高能量离子注入是半导体器件制造中的一项重要工艺。
通过将高能量离子注入到硅晶圆表面，可以改变硅晶圆的电学性质，实现电路中的控制和测量。
6. 薄膜制备与沉积（Film Deposition）薄膜制备与沉积是制造半导体器件的关键工艺之一。
这个工艺将薄膜材料沉积在硅晶圆表面，包括化学气相沉积、物理气相沉积和溅射等方法。
这些薄膜能够提供电介质、导电材料或阻挡层等功能。
7. 设备和工艺完善（Equipment and Process Optimization）设备和工艺完善的步骤是优化半导体制造工艺的关键。
半导体技术名词解释题
半导体技术名词解释题1、半导体：半导体指常温下导电性能介于导体与绝缘体之间的材料。
2、本征半导体：本征半导体是完全不含杂质且无晶格缺陷的纯净半导体。
3、直接带隙半导体：直接带隙半导体是导带底和价带顶在k空间中处于同一位置的半导体。
4、间接带隙半导体：间接带隙半导体材料导带底和价带顶在k空间中处于不同位置。
5、极性半导体：在共价键化合物半导体中，含有离子键成分的半导体为极性半导体。
6、能带、允带、禁带：当N个原子相互靠近结合成晶体后，每个电子都要受到周围原子势场的作用，其结果是每个N度简并的能级都分裂成N个彼此相距很近的能级，这N个能级组成一个能带。
此时电子不再属于某个原子而是在晶体中做共有化运动，分裂的每个能带都称为允带，允带包含价带和导带两种。
允带间因为没有能级称为禁带。
7、半导体的导带：半导体的导带是由自由电子形成的能量空间。
即固体结构内自由运动的电子所具有的能量范围。
8、半导体的价带：价带是指半导体或绝缘体中，在0K时能被电子占满的最高能带。
9、禁带宽度：禁带宽度是指导带的最低能级和价带的最高能级之间的能。
10、带隙：带隙是导带的最低点和价带的最高点的能量之差。
11、宽禁带半导体材料：一般把禁带宽度E g≥ 2.3 eV的半导体材料归类为宽禁带半导体材料。
12、绝缘体的能带结构：绝缘体中导带和价带之间的禁带宽度比较大，价带电子难以激发并跃迁到导带上去，导带成为电子空带，而价带成为电子满带，电子在导带和价带中都不能迁移。
13、杂质能级：杂质能级是指半导体材料中的杂质使严格的周期性势场受到破坏，从而有可能产生能量在带隙中的局域化电子态,称为杂质能级。
14、替位式杂质：杂质原子进入半导体硅以后，杂质原子取代晶格原子而位于晶格点处，称为替位式杂质。
15、间隙式杂质：杂质原子进入半导体以后，杂质原子位于晶格原子间的间隙位置，称为间隙式杂质。
16、施主杂质比晶格主体原子多一个价电子的替位式杂质，它们在适当的温度下能够释放多余的价电子，从而在半导体中产生非本征自由电子并使自身电离。
8 电子束光刻Electron beam lithography_2
Kinetic energy of ejected electron: Ekin = ECore State − EB − EC'
ECore State, EB, EC': core level (here n=1), first outer shell (n=2), second outer shell (n=2) electron energies. (ECore State − EB is the same energy as the characteristic x-ray energy)
X-ray region for EDX
(x-ray is actually produced wherever primary electron goes. It travels/ penetrates even farther than BSE)
Best spatial resolution for SEM
Back-scattered electron (BSE) region for imaging
(Again, BSE is actually produced wherever primary electron goes. It has higher energy, so travel longer than SE)
Electron energy (eV)
• AES is good for light element (e.g. Li) where Auger electron dominate x-ray emission yield. • It is for surface analysis, able to analyze only the top surface (2-5nm). • Scanning Auger Microscope (SAM) is a type of AES, but with focused electron beam to give high resolution spatial information of element distribution.
9 电子束光刻Electron beam lithography_3.pptx
2
Resolution enhancement process: low temperature development (ZEP)
Contrast curve for ZEP-520 at various temperatures
Contrast as a function of development temperature.
1
Textbook: Nanofabrication: principles, capabilities and limits, by Zheng Cui
Resolution enhancement process: ultrasonic development
Ultrasonic helps to remove exposed resist (for positive tone) from insiຫໍສະໝຸດ e narrow trenches.
Electron beam lithography (EBL)
1. Overview and resolution limit. 2. Electron source (thermionic and field emission). 3. Electron optics (electrostatic and magnetic lens). 4. Aberrations (spherical, chromatic, diffraction, astigmation). 5. EBL systems (raster/vector scan, round/shaped beam) 6. Interaction of electrons with matter (scattering, x-ray, Auger). 7. Proximity effect and how to reduce it. 8. Resist contrast and sensitivity. 9. Several popular resist materials. 10. High resolution EBL, resolution limit. 11. Grey-scale EBL for 3D structure fabrication. 12. Anti-charging techniques. 13. Electron projection and multi-beam lithography
计算机缩写术语完全介绍
AIS（Alternate Instruction Set，交替指令集）
ALAT（advanced load table，高级载入表）
ALU（Arithmetic Logic Unit，算术逻辑单元）
Aluminum（铝）
IOPs（Integer Operations Per Second，整数操作/秒）
IPC（Instructions Per Clock Cycle，指令/时钟周期）
ISA（instruction set architecture，指令集架构）
ISD（inbuilt speed-throttling device，内藏速度控制设备）
BSP（Boot Strap Processor，启动捆绑处理器）
BTAC（Branch Target Address Calculator，分支目标寻址计算器）
CBGA (Ceramic Ball Grid Array，陶瓷球状网阵排列)
CDIP (Ceramic Dual-In-Line，陶瓷双重直线)
FC-PGA（Flip-Chip Pin Grid Array，反转芯片针脚栅格阵列）
FDIV（Floationg Point Divide，浮点除）
FEMMS：Fast Entry/Exit Multimedia State，快速进入/退出多媒体状态
FFT（fast Fourier transform，快速热欧姆转换）
CPI（cycles per instruction，周期/指令）
CPLD（Complex Programmable Logic Device，複雜可程式化邏輯元件）
电子束光刻基本理论培训课件(PPT54页)
负抗蚀剂
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
化学放大抗蚀剂
优势：高灵敏度、高分辨率和对比度， 抗干法刻蚀能力强
缺点：对后烘条件要求苛刻，正抗蚀剂 的表面易受空气中的化学物质污染。
m m
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
利用某些高分子聚合物对电子束敏感形成曝光图形
光学曝光分辨率受光波长的限制
G线
I线
DUV
EUV
436nm
365nm
248,193nmnm
分辨率限制：主要来自电子散射
与电子能量有关 100eV电子， 波长0.12nm
电子束光刻基本理论培训课件(PPT54 页)
曝光技术分类
• 传统光学曝光技术 • 电子束曝光技术 • 离子束曝光技术 • X射线曝光技术 • 极紫外曝光技术 • 纳米压印术
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
Conclusion on Lithography techniques
电子束光刻基本理论培训课件(PPT54 页)
灵敏度和对比度电子束光刻基本理论培训课件(PPT54页)
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
高对比度
• 侧壁更陡 • 工艺宽容度更大 • 分辨率更高（不一定总是） • 对临近效应更不敏感
电子束光刻基本理论培训课件(PPT54 页)
电子束光刻基本理论培训课件(PPT54 页)
机械类各行业专业英语词汇
机械类各行业专业英语词汇1. 汽车行业 (Automotive Industry)•Engine（发动机）•Transmission（传动装置）•Suspension（悬挂系统）•Brake（刹车系统）•Steering（转向系统）•Exhaust system（排气系统）•Fuel injection（燃油喷射系统）•Tire（轮胎）•Battery（电池）•Alternator（发电机）2. 航空航天工业 (Aerospace Industry)•rcraft（飞机）•Wing（机翼）•Fuselage（机身）•Cockpit（驾驶舱）•Landing gear（起落架）•Jet engine（喷气发动机）•leron（副翼）•Thrust（推力）•Propeller（螺旋桨）•Avionics（航空电子设备）3. 重工业 (Heavy Industry)•Machinery（机械）•Crane（起重机）•Bulldozer（推土机）•Excavator（挖掘机）•Boiler（锅炉）•Conveyor belt（输送带）•Generator（发电机）•Drill（钻机）•Foundry（铸造厂）•Welding（焊接）4. 电子行业 (Electronics Industry)•Circuit board（电路板）•Microchip（微芯片）•Transistor（晶体管）•Capacitor（电容器）•Resistor（电阻器）•Diode（二极管）•Integrated circuit（集成电路）•Semiconductor（半导体）•Printed circuit board (PCB)（印刷电路板）•Soldering（焊接）5. 工程机械 (Construction Machinery)•Cranes（起重机）•Excavators（挖掘机）•Bulldozers（推土机）•Loaders（装载机）•Rollers（压路机）•Pavers（铺路机）•Concrete mixer（混凝土搅拌机）•Tower crane（塔式起重机）•Trencher（挖沟机）•Forklift（叉车）6. 机床行业 (Machine Tool Industry)•Lathe（车床）•Milling machine（铣床）•Drilling machine（钻床）•Grinding machine（磨床）•Boring machine（镗床）•Shaping machine（拉坯机）•CNC machine tool（数控机床）•Power press（压力机）•Shearing machine（剪板机）•Woodworking machine（木工机械）7. 包装机械 (Packaging Machinery)•Filling machine（灌装机）•Sealing machine（封口机）•Labeling machine（贴标机）•Capping machine（旋盖机）•Wrapping machine（包装机）•Coding machine（打码机）•Shrinking machine（收缩机）•Vacuum packaging machine（真空包装机）•Cartoning machine（装箱机）•Palletizing machine（托盘包装机）8. 纺织机械 (Textile Machinery)•Spinning machine（纺纱机）•Weaving machine（织布机）•Knitting machine（针织机）•Dyeing machine（染色机）•Printing machine（印花机）•Stenter machine（拉伸机）•Embroidery machine（绣花机）•Textile finishing machine（纺织整理机）•Yarn twisting machine（纱线捻接机）•Textile testing equipment（纺织测试设备）9. 精密仪器 (Precision Instruments)•Optical microscope（光学显微镜）•Electronic balance（电子天平）•Spectrophotometer（分光光度计）•Ultrasonic cleaner（超声波清洗机）•Atomic force microscope (AFM)（原子力显微镜）•Mass spectrometer（质谱仪）•X-ray diffractometer（X射线衍射仪）•Scanning electron microscope (SEM)（扫描电子显微镜）•Electron beam lithography (EBL)（电子束曝光机）•Surface profilometer（表面粗糙度仪）10. 医疗器械 (Medical Devices)•MRI machine（核磁共振机）•CT scanner（计算机断层扫描仪）•X-ray machine（X射线机）•Ultrasound machine（超声波仪）•Surgical microscope（手术显微镜）•Electrocardiogram (ECG) machine（心电图机）•Defibrillator（除颤仪）•Anesthesia machine（麻醉机）•Blood pressure monitor（血压监测仪）•Thermometer（体温计）以上是机械类各行业中常见的专业英语词汇。
半导体工艺流程英文缩写
半导体工艺流程英文缩写英文回答：Semiconductor Fabrication Process Acronyms.ALD: Atomic Layer Deposition.APCVD: Atmospheric Pressure Chemical Vapor Deposition. CMP: Chemical Mechanical Polishing.CVD: Chemical Vapor Deposition.DIB: Dry Ion Beam.DRAM: Dynamic Random Access Memory.EB: Electron Beam.EBL: Electron Beam Lithography.EPI: Epitaxial Growth.EUV: Extreme Ultraviolet.FIB: Focused Ion Beam.FPD: Flat Panel Display.IC: Integrated Circuit.LPCVD: Low Pressure Chemical Vapor Deposition. MEMS: Microelectromechanical Systems.MOCVD: Metalorganic Chemical Vapor Deposition. MOS: Metal-Oxide-Semiconductor.MPSG: Multilevel Photoresist Spin.OFE: Oxide Free Etch.PECVD: Plasma Enhanced Chemical Vapor Deposition. PVD: Physical Vapor Deposition.RIE: Reactive Ion Etching.RTP: Rapid Thermal Processing.SOG: Spin-On Glass.SOI: Silicon-On-Insulator.STI: Shallow Trench Isolation.TEOS: Tetraethyl Orthosilicate.UHV: Ultra High Vacuum.UV: Ultraviolet.中文回答：半导体工艺流程英文缩写。
半导体器件物理学参考答案(第三章)
Chapter 3Terminology and knowledge3.1Integrated semiconductor companiesCompanies that design and fabricate integrated circuitsFablessWith no fabrication/processing facilityFoundriesCompanies that specialize in processing wafers to produce silicon devicesWafer fabFabrication facility where wafers are processed to produce silicon devicesIntegrated circuitsSystem of transistors manufactured on silicon wafersCPUCentral processor unit that is an active part of computer containing the datapath and controlDRAMDynamic random access memoryFlat-panel displaysDisplay panels with flat screensMEMSMicro-electro-mechanical-systemDNA chipsSilicon chips used for DNA screeningDry oxidationGrowth of SiO2 using oxygen gasWet oxidationGrowth of SiO2 using water vaporHorizontal furnaceHorizontally oriented oxidation furnaceVertical furnaceVertically oriented oxidation furnacePhotolithography/Optical lithographyProcess in which the resist is optically patterned and selectively removed from designated areas on a waferWafer stepperEquipment used in lithography processPhotoresistUltraviolet-light sensitive materialPhotomaskQuartz photo-plate containing a copy of pattern to be transferred to Si or SiO2 surfaceNegative resistPhotoresist that becomes polymerized and resistant to a developer when exposed to an UV lightPositive resistPhotoresist whose stabilizer breaks down when exposed to an UV light, leading to the preferential removal of exposed regions in a developerStripRemoval of photoresistAsherSystem that removes the resist on a wafer by oxidizing it in oxygen plasma or UV ozone systemLithography fieldSmall area exposed to an UV light during the exposure through a photomask and an optical reduction systemStepperAnother name for lithography equipmentStep-and-repeat actionThe process of exposing different parts of a wafer until the whole wafer has been exposedPhase-shift photomaskPhotomask that produces 180 degree phase difference in neighboring clear features so that their diffraction fringes cancel each otherOptical Proximity Correction (OPC)Printing a slightly different shape on the photomask to correct distortions resulting from an exposure processOverlayAlignment between 2 separate lithography stepsExtreme UV lithography (EUVL)Lithography that uses 13nm wavelength and is expected to result in much higher resolutionSoft-x-ray lithographyOld name of EUVLElectron-beam lithography (EBL)Lithography using a focused stream of electronsElectron projection lithography (EPL)EBL that exposes a complex pattern simultaneously using a mask and a reduction electron lens systemWet etchingRemoval of SiO2 using hydrofluoric acidIsotropicWithout preference in directionDry etching (also known as plasma etching or reactive-ion etching (RIE)) Removal of SiO2 using plasma and reactive ionsAnisotropicWith preference in directionSelectivityThe extent in which an etching process distinguishes between different materials End-point detectorDetector that monitors the emission of characteristic light from the etching products so as to signal when etching should endPlasma process induced damage / Wafer charging damageDamage to devices on wafers due to the use of plasmaAntenna EffectSensitivity of the damage to the size of the conductorIon implantationMethod of doping in which ions of impurity are accelerated and shot into thesemiconductor surfaceGas-source dopingMethod of doping in which a gas reacts with silicon and liberates phosphorus so that phosphorous diffuses into the silicon substrateSolid-source diffusionMethod of doping in which the dopants from the thin film coated on the siliconsurface diffuse into siliconAnnealHeating of wafers for dopant activation and damage removalDopant activationMaking dopants behave as donors and acceptors by heating the wafersImplantation doseTotal number of implanted ions/cm2Depth/ RangeThe location of peak concentration below the surface of siliconStraddleSpread of dopant concentration profile3.2 DiffusionThe movement of molecules from an area of high concentration to an area of low concentrationJunction depthThickness of diffusion layerDiffusivityConstant that describes how quickly a given impurity diffuses in silicon for a given furnace temperaturePredepositionPortion of diffusion process step with the source presentDrive-inPortion of diffusion process step without the sourceFurnace annealingHeating of wafers in a furnace for dopant activation and damage removalRapid thermal annealing (RTA)Annealing process in which a wafer is rapidly heated to high temperature and cooled quickly down to the room temperatureRapid thermal oxidationOxidation process in which a wafer is heated to the designated temperature quickly, oxidized, and then cooled rapidly down to the room temperatureRapid thermal chemical vapor deposition (CVD)Chemical vapor deposition process in which a wafer is heated to the designated temperature quickly, the material is deposited on the wafer, and the wafer is cooled rapidly down to the room temperatureLaser annealingAnnealing process in which a silicon wafer is heated with a pulsed laser Transient enhanced diffusion (TED)Diffusion phenomena in which diffusion rate is increased by crystal damage due to ion implantationInterconnectMetal connection between devices in integrated circuitsInter-metal dielectricsMaterials used for electrical isolation between metal layersCrystallineMolecular structure with nearly perfect periodicityPolycrystallineMolecular structure composed of densely packed crystallites or grains of single-crystalsAmorphousStructure with no atomic or molecular orderingGrain boundaryInterface between crystal grainsThin-film transistors (TFT)Transistors made of amorphous or polycrystalline silicon, widely used in flat-panel displaysSputtering targetThe source material for sputteringReactive sputteringSputtering accompanied by chemical reaction of sputtered ions. For example, Ti sputtered in nitrogen gas forms TiN film on the Si waferPhysical vapor deposition (PVD)Another name for sputteringStep coverage problemThe inability of sputtering to deposit uniform films in small holes or vertical features on waferHigh-temperature oxide (HTO)Very conformal oxide formed by a CVD process at a high temperatureLow-pressure chemical vapor deposition (LPCVD)CVD process at low pressure, which yields good thickness uniformity and low gas consumptionPlasma-enhanced chemical vapor deposition (PECVD)CVD using plasma; low deposition temperaturesIn-situ dopingDoping process in which dopant species are introduced during the CVD deposition of polycrystalline siliconSpin-onProcess in which liquid materials are spun onto the waferEpitaxySpecial type of thin-film deposition technology that produces a crystalline layer on silicon surfaces that is an extension of the underlying semiconductor crystal arrangementMetallizationInterconnection of individual devices by metal linesVia/ PlugElectrical connection between adjacent metal layersElectromigrationMigration of metal along the crystal-grain boundaries in a quasi-random manner, causing voids to occur in metal interconnectsDamascene processProcess used to form copper interconnect linesChemical-mechanical polishing (CMP)Process in which a polishing pad and slurry are used to polish away material and leave a very flat surfaceBack-end processMetallization; last step of IC fabricationFront-end processesOxidation, diffusionPlanarizationProcess to obtain a flat surface to improve lithography and etchingMulti-chip modulesMultiple chips put into one packageSolder bumpsElectrical connection between chip and packageFlip-chip bondingMelting pre-formed solder bumps on IC pads to make all connectionssimultaneouslyBurn-inSubjecting IC packages to higher than normal voltage and temperatures; identify potential failuresQualificationRoutine used to verify the quality of manufacturing and reliabilityOperation life testPart of qualification process; to find out if the devices last over one thousandoperating hours3.3 (a) Lithography fieldA small area having the best optical resolution (The beam intensity is uniformwithin a lithography field.)(b) M isalignmentLayer to layer mismatch (Each new mask level should be aligned to one of theprevious levels)(c) SelectivityThe ratio of etching rate of the film to be etched to that of the substrate filmbelow(d) End-point detectionDetecting the exposed substrate film after the removal of the desired film.(e) Step coverageThe ratio of film thickness deposited on the flat surface to that deposited on thenon-flat surface.(f) ElectromigrationThe movement of atoms in a metal film due to momentum transfer from theelectrons carrying the current.3.4 (a) Wet. Otherwise, it would take too long to grow the thick oxide.(b) Dry because it provides better control of the gate (channel) length and verticalwall profile.(c) Arsenic because- it is a donor ion (group V),- it reduces R p and ∆R p, and- it reduces diffusivity.(d) PECVD(e) Sputtering, dry etching, plasmas containing chlorine.(f)Oxidation3.5 Wet oxidation is faster than dry oxidation because the solid solubility of H 2O steaminto SiO 2 is higher than that of O 2 gas into SiO 2. This creates a very sharpconcentration profile that causes H 2O to diffuse towards the SiO 2-Si interface muchmore effectively than O 2 under the same conditions.3.6 (a) hr hrum um um um um 239.6/0117.02.0*165.02.0*2.02=+=τSolving the given equation for t ox and using quadratic formula,um t B A A T ox 256.02)(42=+++-=τ. (b) Linear approximation: )(τ+≈t AB T ox => 0.655um (156% error). Quadratic approximation: => 0.320um (25% error). )(2τ+≈t B T oxIn this case , neither linear nor quadratic approximations would bevalid.ox T A ≈Deposition3.7 Poly Silicon:SiH 4 → Si(s) + 2H 2Silicon Nitride:3SiH 2Cl 2 + 4NH 3 → Si 3N 4 + 6HCl + 6H 2LTO:SiH 4 + O 2 → SiO 2 + 2HCl + 2H 2HTO:SiH 2Cl 2 + 2H 2O → SiO 2 + 2HCl + 2H 2Diffusion3.8 (a) )(Dt Dt x x Dt x j j j ∆+=∆+⇒=())()(222Dt x Dt Dt x x x x j j j j j ∆+=∆+=∆+∆+())(2Dt x x x j j j ∆=∆+∆Since ,j j x x ∆>>j j j j x Dt x Dt x x 2)()(2∆≈∆⇒∆≈∆. (b) For boron,D (500K) = 10.5⨯Exp[-3.69/(8.614⨯10-5⨯773)]cm2/sec = 9.0⨯10-24 cm 2/sec, and500 years = 1.58⨯1010 sec.Hence,m cm x j μ9131042.11042.1--⨯=⨯=∆.Our assumption (j j x x ∆>>) in part (a) is correct.3.9 (a) Junction depth is distance from surface where the dopant concentration equalsthe substrate concentration.31510-===cm N N N junction d sub (Required junction dopant concentration) From Eq. (3.6.1),31540102--==cm e DtN N Dt x junction j π UsingeV E and cm N cm D e D D a kT E a 7.3,10sec,/5.10,215020/0====--,cm X j 41097.1-⨯=.(b) X j has the form2/1ln 2⎥⎦⎤⎢⎣⎡⎪⎪⎭⎫ ⎝⎛=Dt k Dt X j . Taking the derivative,j j j X Dt X Dt k Dt k Dt dDt dX 12ln 21ln 12/12/1-=⎪⎪⎭⎪⎪⎬⎫⎪⎪⎩⎪⎪⎨⎧⎥⎦⎤⎢⎣⎡⎪⎪⎭⎫ ⎝⎛-⎥⎦⎤⎢⎣⎡⎪⎪⎭⎫ ⎝⎛=. 14491039.91098.11102---⨯=⨯-⨯⨯=cm 101.98dDt dX -4j ()()240637370.310996.3360010.5.10cm eDt --⨯==∆ Hence, .01075.3.35≈⨯=∆∂∂=∆-cm Dt Dt X X j jVisualization3.10 (a) (b) 1.0μm resist Silicon substrate 1.0μm oxide 1.0μm oxide Silicon substrate(c) (d) 1.0μm oxide 1.0μm resist Silicon substrateSilicon substrate 1.0μm oxide3.11Contact 2 MaskContact 1 MaskChanging the polarity of the contact 1 mask results in the same cross section as problem 3.10 (d). The same cross-section is obtained by using a negative resist and the reversed mask of contact 1, which is opaque in the inside of contact 1 area.。
(计算机)英文术语完全介绍
（计算机）英文术语完全介绍二、英文术语完全介绍在每组术语中，我按照英文字母的排列顺序来分类。
1、CPU 3DNow!（3D no waiting，无须等待的3D处理） AAM（AMD Analyst Meeting，AMD分析家会议） ABP（Advanced Branch Prediction，高级分支预测）ACG（Aggressive Clock Gating，主动时钟选择） AIS（Alternate Instruction Set，交替指令集） ALAT （advanced load table，高级载入表） ALU（Arithmetic Logic Unit，算术逻辑单元） Aluminum（铝） AGU（Address Generation Units，地址产成单元） APC（Advanced Power Control，高级能源控制） APIC（Advanced rogrammable Interrupt Controller，高级可编程中断控制器） APS（Alternate Phase Shifting，交替相位跳转） ASB（Advanced System Buffering，高级系统缓冲） ATC （Advanced Transfer Cache，高级转移缓存） ATD（Assembly Technology Development，装配技术发展） BBUL（Bumpless Build-Up Layer，内建非凹凸层） BGA（Ball Grid Array，球状网阵排列） BHT（branch prediction table，分支预测表） Bops（Billion Operations Per Second，10亿操作/秒） BPU（Branch Processing Unit，分支处理单元） BP （Brach Pediction，分支预测） BSP（Boot Strap Processor，启动捆绑处理器） BTAC（Branch Target AddressCalculator，分支目标寻址计算器） CBGA (Ceramic Ball Grid Array，陶瓷球状网阵排列) CDIP (Ceramic Dual-In-Line，陶瓷双重直线) Center Processing Unit Utilization，中央处理器占用率 CFM（cubic feet per minute，立方英尺/秒） CMT（course-grained multithreading，过程消除多线程） CMOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体） CMOV （conditional move instruction，条件移动指令） CISC （Complex Instruction Set Computing，复杂指令集计算机） CLK（Clock Cycle，时钟周期） CMP（on-chip multiprocessor，片内多重处理） CMS（Code Morphing Software，代码变形软件） co-CPU（cooperative CPU，协处理器） COB（Cache on board，板上集成缓存，做在CPU 卡上的二级缓存，通常是内核的一半速度）） COD（Cache on Die，芯片内核集成缓存） Copper（铜） CPGA（Ceramic Pin Grid Array，陶瓷针型栅格阵列） CPI（cycles per instruction，周期/指令） CPLD（Complex Programmable Logic Device，複雜可程式化邏輯元件） CPU（Center Processing Unit，中央处理器） CRT（Cooperative Redundant Threads，协同多余线程） CSP（Chip Scale Package，芯片比例封装） CXT（Chooper eXTend，增强形K6-2内核，即K6-3） Data Forwarding（数据前送） dB（decibel，分贝） DCLK（Dot Clock，点时钟） DCT（DRAM Controller，DRAM控制器） DDT（Dynamic Deferred Transaction，动态延期处理） Decode（指令解码） DIB（Dual Independent Bus，双重独立总线） DMT（Dynamic Multithreading Architecture，动态多线程结构） DP（Dual Processor，双处理器） DSM（Dedicated Stack Manager，专门堆栈管理） DSMT（Dynamic Simultaneous Multithreading，动态同步多线程） DST（Depleted Substrate Transistor，衰竭型底层晶体管） DTV（Dual Threshold Voltage，双重极限电压） DUV（Deep Ultra-Violet，纵深紫外光） EBGA（Enhanced Ball Grid Array，增强形球状网阵排列） EBL（electron beam lithography，电子束平版印刷） EC（Embedded Controller，嵌入式控制器） EDEC（Early Decode，早期解码） Embedded Chips（嵌入式） EPA（edge pin array，边缘针脚阵列） EPF （Embedded Processor Forum，嵌入式处理器论坛） EPL （electron projection lithography，电子发射平版印刷）EPM（Enhanced Power Management，增强形能源管理） EPIC （explicitly parallel instruction code，并行指令代码）EUV（Extreme Ultra Violet，紫外光） EUV（extreme ultraviolet lithography，极端紫外平版印刷） FADD （Floationg Point Addition，浮点加） FBGA（Fine-PitchBall Grid Array，精细倾斜球状网阵排列） FBGA（flipchip BGA，轻型芯片BGA） FC-BGA（Flip-Chip Ball Grid Array，反转芯片球形栅格阵列） FC-LGA（Flip-Chip Land Grid Array，反转接点栅格阵列） FC-PGA（Flip-Chip Pin Grid Array，反转芯片针脚栅格阵列） FDIV（Floationg Point Divide，浮点除） FEMMS：Fast Entry/Exit Multimedia State，快速进入/退出多媒体状态 FFT（fast Fouriertransform，快速热欧姆转换） FGM（Fine-Grained Multithreading，高级多线程） FID（FID：Frequency identify，频率鉴别号码） FIFO（First Input First Output，先入先出队列） FISC（Fast Instruction Set Computer，快速指令集计算机） flip-chip（芯片反转） FLOPs （Floating Point Operations Per Second，浮点操作/秒）FMT（fine-grained multithreading，纯消除多线程） FMUL （Floationg Point Multiplication，浮点乘） FPRs （floating-point registers，浮点寄存器） FPU（Float Point Unit，浮点运算单元） FSUB（Floationg Point Subtraction，浮点减） GFD（Gold finger Device，金手指超频设备） GHC（Global History Counter，通用历史计数器） GTL（Gunning Transceiver Logic，射电收发逻辑电路） GVPP（Generic Visual Perception Processor，常规视觉处理器） HL-PBGA: 表面黏著,高耐热、轻薄型塑胶球状网阵封装 HTT（Hyper-Threading Technology，超级线程技术） Hz（hertz，赫兹，频率单位） IA（Intel Architecture，英特尔架构） IAA（Intel Application Accelerator，英特尔应用程序加速器） ICU（Instruction Control Unit，指令控制单元） ID（identify，鉴别号码）IDF（Intel Developer Forum，英特尔开发者论坛） IEU （Integer Execution Units，整数执行单元） IHS（Integrated Heat Spreader，完整热量扩展） ILP （Instruction Level Parallelism，指令级平行运算） IMM: Intel Mobile Module, 英特尔移动模块 Instructions Cache，指令缓存 Instruction Coloring（指令分类） IOPs （Integer Operations Per Second，整数操作/秒） IPC （Instructions Per Clock Cycle，指令/时钟周期） ISA （instruction set architecture，指令集架构） ISD （inbuilt speed-throttling device，内藏速度控制设备）ITC（Instruction Trace Cache，指令追踪缓存） ITRS （International Technology Roadmap for Semiconductors，国际半导体技术发展蓝图） KNI（Katmai New Instructions，Katmai新指令集，即SSE） Latency（潜伏期） LDT（Lightning Data Transport，闪电数据传输总线） LFU（Legacy Function Unit，传统功能单元） LGA（land grid array，接点栅格阵列） LN2（Liquid Nitrogen，液氮） Local Interconnect（局域互连） MAC （multiply-accumulate，累积乘法） mBGA (Micro Ball Grid Array，微型球状网阵排列) nm（namometer，十亿分之一米/毫微米） MCA（machine check architecture，机器检查体系） MCU（Micro-Controller Unit，微控制器单元） MCT （Memory Controller，内存控制器） MESI（Modified, Exclusive, Shared, Invalid：修改、排除、共享、废弃）MF（MicroOps Fusion，微指令合并） mm（micron metric，微米） MMX（MultiMedia Extensions，多媒体扩展指令集）MMU（Multimedia Unit，多媒体单元） MMU（Memory Management Unit，内存管理单元） MN（model numbers，型号数字） MFLOPS（Million Floationg Point/Second，每秒百万个浮点操作） MHz（megahertz，兆赫） mil（PCB 或晶片佈局的長度單位，1 mil = 千分之一英寸） MIPS （Million Instruction Per Second，百万条指令/秒） MOESI （Modified, Owned, Exclusive, Shared or Invalid，修改、自有、排除、共享或无效） MOF（Micro Ops Fusion，微操作熔合） Mops（Million Operations Per Second，百万次操作/秒） MP（Multi-Processing，多重处理器架构）MPF（Micro processor Forum，微处理器论坛） MPU （Microprocessor Unit，微处理器） MPS（MultiProcessor Specification，多重处理器规范） MSRs（Model-SpecificRegisters，特别模块寄存器） MSV（MultiprocessorSpecification Version，多处理器规范版本） NAOC （no-account OverClock，无效超频） NI（Non－Intel，非英特尔） NOP（no operation，非操作指令） NRE （Non-Recurring Engineering charge，非重複性工程費用）OBGA（Organic Ball Grid Arral，有机球状网阵排列） OCPL （Off Center Parting Line，远离中心部分线队列） OLGA （Organic Land Grid Array，有机平面网阵包装） OoO（Out of Order，乱序执行） OPC（Optical Proximity Correction，光学临近修正） OPGA（Organic Pin Grid Array，有机塑料针型栅格阵列） OPN（Ordering Part Number，分类零件号码） PAT（Performance Acceleration Technology，性能加速技术） PBGA（Plastic Pin Ball Grid Array，塑胶球状网阵排列） PDIP (Plastic Dual-In-Line，塑料双重直线) PDP（Parallel Data Processing，并行数据处理） PGA （Pin-Grid Array，引脚网格阵列）,耗电大 PLCC (Plastic Leaded Chip Carriers，塑料行间芯片运载) Post-RISC（加速RISC，或后RISC） PR（Performance Rate，性能比率）PIB（Processor In a Box，盒装处理器） PM （Pseudo-Multithreading，假多线程） PPGA（Plastic Pin Grid Array，塑胶针状网阵封装） PQFP（Plastic Quad Flat Package，塑料方块平面封装） PSN（Processor Serialnumbers，处理器序列号） QFP（Quad Flat Package，方块平面封装） QSPS（Quick Start Power State，快速启动能源状态） RAS（Return Address Stack，返回地址堆栈） RAW （Read after Write，写后读） REE（Rapid Execution Engine，快速执行引擎） Register Contention（抢占寄存器） Register Pressure（寄存器不足） Register Renaming （寄存器重命名） Remark（芯片频率重标识） Resource contention（资源冲突） Retirement（指令引退） RISC （Reduced Instruction Set Computing，精简指令集计算机） ROB（Re-Order Buffer，重排序缓冲区） RSE（register stack engine，寄存器堆栈引擎） RTL（Register Transfer Level，暫存器轉換層。
电子束光刻系统(EBL)市场调研报告-主要企业、市场规模、份额及发展趋势
电子束光刻系统(EBL)市场报告主要研究：电子束光刻系统(EBL)市场规模：产能、产量、销售、产值、价格、成本、利润等电子束光刻系统(EBL)行业竞争分析：原材料、市场应用、产品种类、市场需求、市场供给，下游市场分析、供应链分析、主要企业情况、市场份额、并购、扩张等电子束曝光（electron beam lithography）指使用电子束在表面上制造图样的工艺，是光刻技术的延伸应用。
电子束光刻系统(EBL)即用于实现电子束曝光的系统。
2023年全球电子束光刻系统(EBL)市场规模大约为13亿元（人民币），预计2030年将达到22亿元，2024-2030期间年复合增长率（CAGR）为6.9%。
全球电子束光刻系统（Electron Beam Lithography System (EBL)）的主要参与者包括Raith、Vistec、JEOL、Elionix 和Crestec。
全球前三大制造商的份额超过70%。
日本是最大的市场，占有率约为48%，其次是欧洲和北美，占有率分别约为34%和12%。
就产品而言，高斯光束EBL系统是最大的细分市场，占有率超过70%。
在应用方面，应用最多的是工业领域，其次是学术领域。
（Win Market Research）辰宇信息报告分析电子束光刻系统(EBL)行业竞争格局，包括全球市场主要厂商竞争格局和中国本土市场主要厂商竞争格局，重点分析全球主要厂商电子束光刻系统(EBL)产能、销量、收入、价格和市场份额，全球电子束光刻系统(EBL)产地分布情况、中国电子束光刻系统(EBL)进出口情况以及行业并购情况等。
如果您有兴趣了解详情，薇joie ：chenyu-joie 同时了解更多前沿报告及报价。
针对电子束光刻系统(EBL)行业产品分类、应用、行业政策、产业链、生产模式、销售模式、行业发展有利因素、不利因素和进入壁垒也做了详细分析。
全球及中国主要厂商包括：RaithJEOLElionixVistecCrestecNanoBeam按照不同产品类型，包括如下几个类别：高斯光束EBL系统赋形波束EBL系统按照不同应用，主要包括如下几个方面：学术领域工业领域其他领域报告包含的主要地区和国家：北美（美国和加拿大）欧洲（德国、英国、法国、意大利和其他欧洲国家）亚太（中国、日本、韩国、中国台湾地区、东南亚、印度等）拉美（墨西哥和巴西等）中东及非洲地区（土耳其和沙特等）报告正文共11章，各章节主要内容如下：第1章：报告统计范围、产品细分、下游应用领域，以及行业发展总体概况、有利和不利因素、进入壁垒等；第2章：全球市场供需情况、中国地区供需情况，包括主要地区电子束光刻系统(EBL)产量、销量、收入、价格及市场份额等；第3章：全球主要地区和国家，电子束光刻系统(EBL)销量和销售收入，2019-2023，及预测2024到2030；第4章：行业竞争格局分析，包括全球市场企业排名及市场份额、中国市场企业排名和份额、主要厂商电子束光刻系统(EBL)销量、收入、价格和市场份额等；第5章：全球市场不同类型电子束光刻系统(EBL)销量、收入、价格及份额等；第6章：全球市场不同应用电子束光刻系统(EBL)销量、收入、价格及份额等；第7章：行业发展环境分析，包括政策、增长驱动因素、技术趋势、营销等；第8章：行业供应链分析，包括产业链、主要原料供应情况、下游应用情况、行业采购模式、生产模式、销售模式及销售渠道等；第9章：全球市场电子束光刻系统(EBL)主要厂商基本情况介绍，包括公司简介、电子束光刻系统(EBL)产品规格型号、销量、价格、收入及公司最新动态等；第10章：中国市场电子束光刻系统(EBL)进出口情况分析；第11章：中国市场电子束光刻系统(EBL)主要生产和消费地区分布。
集成电路版图复习课答案总结(最终版)
1、描述集成电路工艺技术水平的五个技术指标及其物理含义⑴集成度(Integration Level)：以一个IC芯片所包含的元件(晶体管或门/数)来衡量，（包括有源和无源元件）。
⑵特征尺寸(Feature Size) /（Critical Dimension）：特征尺寸定义为器件中最小线条宽度(对MOS器件而言，通常指器件栅电极所决定的沟道几何长度)，也可定义为最小线条宽度与线条间距之和的一半。
⑶晶片直径(Wafer Diameter)：当前的主流晶圆的尺寸为12吋(300mm)，正在向18吋(450mm)晶圆迈进。
⑷芯片面积(Chip Area)：随着集成度的提高，每芯片所包含的晶体管数不断增多，平均芯片面积也随之增大。
⑸封装（Package）：指把硅片上的电路管脚，用导线接引到外部接头处，以便于其它器件连接。
封装形式是指安装半导体集成电路芯片用的外壳。
2、简述集成电路发展的摩尔定律。
集成电路芯片的集成度每三年提高4倍，而加工特征尺寸缩小2倍，这就是摩尔定律。
当价格不变时，集成电路上可容纳的晶体管数目，约每隔18个月便会增加一倍，性能也将提升一倍3、集成电路常用的材料有哪些集成电路中常用的材料有三类：半导体材料，如Si、Ge、GaAs 以及InP 等；绝缘体材料，如SiO2、SiON 和Si3N4 等；金属材料，如铝、金、钨以及铜等。
/4、集成电路按工艺器件类型和结构形式分为哪几类，各有什么特点。
双极集成电路：主要由双极晶体管构成（NPN型双极集成电路、PNP型双极集成电路）。
优点是速度高、驱动能力强，缺点是功耗较大、集成度较低。
CMOS集成电路：主要由NMOS、PMOS构成CMOS电路，功耗低、集成度高，随着特征尺寸的缩小，速度也可以很高。
BiCMOS集成电路：同时包括双极和CMOS晶体管的集成电路为BiCMOS集成电路，综合了双极和CMOS器件两者的优点，但制作工艺复杂。
5、解释基本概念: 微电子、集成电路、集成度、场区、有源区、阱、外延微电子：微电子技术是随着集成电路，尤其是超大型规模集成电路而发展起来的一门新的技术。
计算机缩写术语完全介绍
计算机缩写术语完全介绍计算机专业英语, 缩写在使用计算机的过程中，你可能会碰到各种各样的专业术语，特别是那些英文缩写常让我们不知所云，下面收集了各方面的词组，希望对大家有帮助。
一、港台术语与内地术语之对照由于港台的计算机发展相对快一些，许多人都去香港或台湾寻找资料，但是港台使用的电脑专业术语与内地不尽相同，你也许曾被这些东西弄得糊里糊涂的。
---------------------------港台术语内地术语埠接口位元位讯号信号数码数字类比模拟高阶高端低阶低端时脉时钟频宽带宽光碟光盘磁碟磁盘硬碟硬盘程式程序绘图图形数位数字网路网络硬体硬件软体软件介面接口母板主板主机板主板软碟机软驱记忆体内存绘图卡显示卡监视器显示器声效卡音效卡解析度分辨率相容性兼容性数据机调制解调器---------------------------二、英文术语完全介绍在每组术语中，按照英文字母的排列顺序来分类。
1、CPU3DNow!（3D no waiting，无须等待的3D处理）AAM（AMD Analyst Meeting，AMD分析家会议）ABP（Advanced Branch Prediction，高级分支预测）ACG（Aggressive Clock Gating，主动时钟选择）AIS（Alternate Instruction Set，交替指令集）ALAT（advanced load table，高级载入表）ALU（Arithmetic Logic Unit，算术逻辑单元）Aluminum（铝）AGU（Address Generation Units，地址产成单元）APC（Advanced Power Control，高级能源控制）APIC（Advanced rogrammable Interrupt Controller，高级可编程中断控制器）APS（Alternate Phase Shifting，交替相位跳转）ASB（Advanced System Buffering，高级系统缓冲）ATC（Advanced Transfer Cache，高级转移缓存）ATD（Assembly Technology Development，装配技术发展）BBUL（Bumpless Build-Up Layer，内建非凹凸层）BGA（Ball Grid Array，球状网阵排列）BHT（branch prediction table，分支预测表）Bops（Billion Operations Per Second，10亿操作/秒）BPU（Branch Processing Unit，分支处理单元）BP（Brach Pediction，分支预测）BSP（Boot Strap Processor，启动捆绑处理器）BTAC（Branch Target Address Calculator，分支目标寻址计算器）CBGA (Ceramic Ball Grid Array，陶瓷球状网阵排列)CDIP (Ceramic Dual-In-Line，陶瓷双重直线)Center Processing Unit Utilization，中央处理器占用率CFM（cubic feet per minute，立方英尺/秒）CMT（course-grained multithreading，过程消除多线程）CMOS（Complementary Metal Oxide Semiconductor，互补金属氧化物半导体）CMOV（conditional move instruction，条件移动指令）CISC（Complex Instruction Set Computing，复杂指令集计算机）CLK（Clock Cycle，时钟周期）CMP（on-chip multiprocessor，片内多重处理）CMS（Code Morphing Software，代码变形软件）co-CPU（cooperative CPU，协处理器）COB（Cache on board，板上集成缓存，做在CPU卡上的二级缓存，通常是内核的一半速度））COD（Cache on Die，芯片内核集成缓存）Copper（铜）CPGA（Ceramic Pin Grid Array，陶瓷针型栅格阵列）CPI（cycles per instruction，周期/指令）CPLD（Complex Programmable Logic Device，?}?s可程式化元件）CPU（Center Processing Unit，中央处理器）CRT（Cooperative Redundant Threads，协同多余线程）CSP（Chip Scale Package，芯片比例封装）CXT（Chooper eXTend，增强形K6-2内核，即K6-3）Data Forwarding（数据前送）dB（decibel，分贝）DCLK（Dot Clock，点时钟）DCT（DRAM Controller，DRAM控制器）DDT（Dynamic Deferred Transaction，动态延期处理）Decode（指令解码）DIB（Dual Independent Bus，双重独立总线）DMT（Dynamic Multithreading Architecture，动态多线程结构）DP（Dual Processor，双处理器）DSM（Dedicated Stack Manager，专门堆栈管理）DSMT（Dynamic Simultaneous Multithreading，动态同步多线程）DST（Depleted Substrate Transistor，衰竭型底层晶体管）DTV（Dual Threshold Voltage，双重极限电压）DUV（Deep Ultra-Violet，纵深紫外光）EBGA（Enhanced Ball Grid Array，增强形球状网阵排列）EBL（electron beam lithography，电子束平版印刷）EC（Embedded Controller，嵌入式控制器）EDEC（Early Decode，早期解码）Embedded Chips（嵌入式）EPA（edge pin array，边缘针脚阵列）EPF（Embedded Processor Forum，嵌入式处理器论坛）EPL（electron projection lithography，电子发射平版印刷）EPM（Enhanced Power Management，增强形能源管理）EPIC（explicitly parallel instruction code，并行指令代码）EUV（Extreme Ultra Violet，紫外光）EUV（extreme ultraviolet lithography，极端紫外平版印刷）FADD（Floating Point Addition，浮点加）FBGA（Fine-Pitch Ball Grid Array，精细倾斜球状网阵排列）FBGA（flipchip BGA，轻型芯片BGA）FC-BGA（Flip-Chip Ball Grid Array，反转芯片球形栅格阵列）FC-PGA（Flip-Chip Pin Grid Array，反转芯片针脚栅格阵列）FDIV（Floating Point Divide，浮点除）FEMMS：Fast Entry/Exit Multimedia State，快速进入/退出多媒体状态FFT（fast Fourier transform，快速热欧姆转换）FGM（Fine-Grained Multithreading，高级多线程）FID（FID：Frequency identify，频率鉴别号码）FIFO（First Input First Output，先入先出队列）FISC（Fast Instruction Set Computer，快速指令集计算机）flip-chip（芯片反转）FLOPs（Floating Point Operations Per Second，浮点操作/秒）FMT（fine-grained multithreading，纯消除多线程）FMUL（Floating Point Multiplication，浮点乘）FPRs（floating-point registers，浮点寄存器）FPU（Float Point Unit，浮点运算单元）FSUB（Floating Point Subtraction，浮点减）GFD（Gold finger Device，金手指超频设备）GHC（Global History Counter，通用历史计数器）GTL（Gunning Transceiver Logic，射电收发逻辑电路）GVPP（Generic Visual Perception Processor，常规视觉处理器）HL-PBGA: 表面黏著,高耐热、轻薄型塑胶球状网阵封装HTT（Hyper-Threading Technology，超级线程技术）Hz（hertz，赫兹，频率单位）IA（Intel Architecture，英特尔架构）IAA（Intel Application Accelerator，英特尔应用程序加速器）ICU（Instruction Control Unit，指令控制单元）ID（identify，鉴别号码）IDF（Intel Developer Forum，英特尔开发者论坛）IEU（Integer Execution Units，整数执行单元）IHS（Integrated Heat Spreader，完整热量扩展）ILP（Instruction Level Parallelism，指令级平行运算）IMM: Intel Mobile Module, 英特尔移动模块Instructions Cache，指令缓存Instruction Coloring（指令分类）IOPs（Integer Operations Per Second，整数操作/秒）IPC（Instructions Per Clock Cycle，指令/时钟周期）ISA（instruction set architecture，指令集架构）ISD（inbuilt speed-throttling device，内藏速度控制设备）ITC（Instruction Trace Cache，指令追踪缓存）ITRS（International Technology Roadmap for Semiconductors，国际半导体技术发展蓝图）KNI（Katmai New Instructions，Katmai新指令集，即SSE）Latency（潜伏期）LDT（Lightning Data Transport，闪电数据传输总线）LFU（Legacy Function Unit，传统功能单元）LGA（land grid array，接点栅格阵列）LN2（Liquid Nitrogen，液氮）Local Interconnect（局域互连）MAC（multiply-accumulate，累积乘法）mBGA (Micro Ball Grid Array，微型球状网阵排列)nm（namometer，十亿分之一米/毫微米）MCA（machine check architecture，机器检查体系）MCU（Micro-Controller Unit，微控制器单元）MCT（Memory Controller，内存控制器）MESI（Modified, Exclusive, Shared, Invalid：修改、排除、共享、废弃）MF（MicroOps Fusion，微指令合并）mm（micron metric，微米）MMX（MultiMedia Extensions，多媒体扩展指令集）MMU（Multimedia Unit，多媒体单元）MMU（Memory Management Unit，内存管理单元）MN（model numbers，型号数字）MFLOPS（Million Floating Point/Second，每秒百万个浮点操作）MHz（megahertz，兆赫）mil（PCB 或晶片?丫值拈L度?挝唬?1 mil = 千分之一英寸）MIPS（Million Instruction Per Second，百万条指令/秒）MOESI（Modified, Owned, Exclusive, Shared or Invalid，修改、自有、排除、共享或无效）MOF（Micro Ops Fusion，微操作熔合）Mops（Million Operations Per Second，百万次操作/秒）MP（Multi-Processing，多重处理器架构）MPF（Micro processor Forum，微处理器论坛）MPU（Microprocessor Unit，微处理器）MPS（MultiProcessor Specification，多重处理器规范）MSRs（Model-Specific Registers，特别模块寄存器）MSV（Multiprocessor Specification Version，多处理器规范版本）NAOC（no-account OverClock，无效超频）NI（Non－Intel，非英特尔）NOP（no operation，非操作指令）NRE（Non-Recurring Engineering charge，非重?}性工程?M用）OBGA（Organic Ball Grid Arral，有机球状网阵排列）OCPL（Off Center Parting Line，远离中心部分线队列）OLGA（Organic Land Grid Array，有机平面网阵包装）OoO（Out of Order，乱序执行）OPC（Optical Proximity Correction，光学临近修正）OPGA（Organic Pin Grid Array，有机塑料针型栅格阵列）OPN（Ordering Part Number，分类零件号码）PAT（Performance Acceleration Technology，性能加速技术）PBGA（Plastic Pin Ball Grid Array，塑胶球状网阵排列）PDIP (Plastic Dual-In-Line，塑料双重直线)PDP（Parallel Data Processing，并行数据处理）PGA（Pin-Grid Array，引脚网格阵列）,耗电大PLCC (Plastic Leaded Chip Carriers，塑料行间芯片运载)Post-RISC（加速RISC，或后RISC）PR（Performance Rate，性能比率）PIB（Processor In a Box，盒装处理器）PM（Pseudo-Multithreading，假多线程）PPGA（Plastic Pin Grid Array，塑胶针状网阵封装）PQFP（Plastic Quad Flat Package，塑料方块平面封装）PSN（Processor Serial numbers，处理器序列号）QFP（Quad Flat Package，方块平面封装）QSPS（Quick Start Power State，快速启动能源状态）RAS（Return Address Stack，返回地址堆栈）RAW（Read after Write，写后读）REE（Rapid Execution Engine，快速执行引擎）Register Contention（抢占寄存器）Register Pressure（寄存器不足）Register Renaming（寄存器重命名）Remark（芯片频率重标识）Resource contention（资源冲突）Retirement（指令引退）RISC（Reduced Instruction Set Computing，精简指令集计算机）ROB（Re-Order Buffer，重排序缓冲区）RSE（register stack engine，寄存器堆栈引擎）RTL（Register Transfer Level，?捍嫫鬓D?Q?印Ｓ搀w描述?Z言的一?N描述?哟危? SC242（242-contact slot connector，242脚金手指插槽连接器）SE（Special Embedded，特别嵌入式）SEC（Single Edge Connector，单边连接器）SECC（Single Edge Contact Cartridge，单边接触卡盒）SEPP（Single Edge Processor Package，单边处理器封装）Shallow-trench isolation（浅槽隔离）SIMD（Single Instruction Multiple Data，单指令多数据流）SiO2F（Fluorided Silicon Oxide，二氧氟化硅）SMI（System Management Interrupt，系统管理中断）SMM（System Management Mode，系统管理模式）SMP（Symmetric Multi-Processing，对称式多重处理架构）SMT（Simultaneous multithreading，同步多线程）SOI（Silicon-on-insulator，绝缘体硅片）SOIC (Plastic Small Outline，塑料小型)SONC（System on a chip，系统集成芯片）SPGA（Staggered Pin Grid Array、交错式针状网阵封装）SPEC（System Performance Evaluation Corporation，系统性能评估测试）SQRT（Square Root Calculations，平方根计算）SRQ（System Request Queue，系统请求队列）SSE（Streaming SIMD Extensions，单一指令多数据流扩展）SFF（Small Form Factor，更小外形格局）SS（Special Sizing，特殊缩放）SSP（Slipstream processing，滑流处理）SST（Special Sizing Techniques，特殊筛分技术）SSOP (Shrink Plastic Small Outline，缩短塑料小型)STC（Space Time Computing，空余时间计算）Superscalar（超标量体系结构）TAP（Test Access Port，测试存取端口）TBGA（Tie Ball Grid Array，带状球形光栅阵列）TCP: Tape Carrier Package（薄膜封装）,发热小TDP（Thermal Design Power，热量设计功率）Throughput（吞吐量）TLB（Translate Look side Buffers，转换旁视缓冲器）TLP（Thread-Level Parallelism，线程级并行）TMP（Threaded Multi-Path，线程多通道）TPI（True Performance Initiative/index，真实性能为先/指标）TQFP (Thin Plastic Quad Flat Pack，薄型方面平面封装)Trc（Row Cycle Time，列循环时间）TrD（Transistor Density，晶体管密度）TSOP（Thin Small Outline Plastic，薄型小型塑料）USWC（Uncacheabled Speculative Write Combination，无缓冲随机联合写操作）VALU（Vector Arithmetic Logic Unit，向量算术逻辑单元）VFSD（Vertex Frequency Stream Divider，顶点频率流分隔）VID（VID：Voltage identify，电压鉴别号码）VLIW（Very Long Instruction Word，超长指令字）VPU（Vector Permutate Unit，向量排列单元）VPU（vector processing units，向量处理单元，即处理MMX、SSE等SIMD指令的地方）VSA（Virtual System Architecture，虚拟系统架构）VTF（VIA Technical Forum，威盛技术论坛）XBar（Crossbar，交叉口闩仲载逻辑单元）XP（Experience，体验）XP（Extra performance，额外性能）XP（eXtreme Performance，极速性能）散热器TFT（Tiny Fin Technology，微型鳍片技术）2、主板3GIO（Third Generation Input/Output，第三代输入输出技术）ACR（Advanced Communications Riser，高级通讯升级卡）ADIMM（advanced Dual In-line Memory Modules，高级双重内嵌式内存模块）AGTL+（Assisted Gunning Transceiver Logic，援助发射接收逻辑电路）AIMM（AGP Inline Memory Module，AGP板上内存升级模块）AMR（Audio／Modem Riser；音效／调制解调器主机板附加直立插卡）AHA（Accelerated Hub Architecture，加速中心架构）AOI（Automatic Optical Inspection，自动光学检验）APU（Audio Processing Unit，音频处理单元）ARF（Asynchronous Receive FIFO，异步接收先入先出）ASF（Alert Standards Forum，警告标准讨论）ASK IR（Amplitude Shift Keyed Infra-Red，长波形可移动输入红外线）AT（Advanced Technology，先进技术）ATX（AT Extend，扩展型AT）BIOS（Basic Input/Output System，基本输入/输出系统）CNR（Communication and Networking Riser，通讯和网络升级卡）CSA（Communication Streaming Architecture，通讯流架构）CSE（Configuration Space Enable，可分配空间）COAST（Cache-on-a-stick，条状缓存）DASP（Dynamic Adaptive Speculative Pre-Processor，动态适应预测预处理器）DB: Device Bay，设备插架DMI（Desktop Management Interface，桌面管理接口）DOT（Dynamic Overclocking Technonlogy，动态超频技术）DPP（direct print Protocol，直接打印协议DRCG（Direct Rambus clock generator，直接RAMBUS时钟发生器）DVMT（Dynamic Video Memory Technology，动态视频内存技术）E（Economy，经济，或Entry-level，入门级）EB（Expansion Bus，扩展总线）EFI（Extensible Firmware Interface，扩展固件接口）EHCI（Enhanced Host Controller Interface，加强型主机端控制接口）EISA（Enhanced Industry Standard Architecture，增强形工业标准架构）EMI（Electromagnetic Interference，电磁干扰）ESCD（Extended System Configuration Data，可扩展系统配置数据）ESR（Equivalent Series Resistance，等价系列电阻）FBC（Frame Buffer Cache，帧缓冲缓存）FireWire（火线，即IEEE1394标准）FlexATX（Flexibility ATX，可扩展性ATX）FSB（Front Side Bus，前端总线）FWH（Firmware Hub，固件中心）GB（Garibaldi架构，Garibaldi基于ATX架构，但是也能够使用WTX构架的机箱）GMCH（Graphics & Memory Controller Hub，图形和内存控制中心）GPA（Graphics Performance Accelerator，图形性能加速卡）GPIs（General Purpose Inputs，普通操作输入）GTL+（Gunning Transceiver Logic，发射接收逻辑电路）HDIT（High Bandwidth Differential Interconnect Technology，高带宽微分互连技术）HSLB（High Speed Link Bus，高速链路总线）HT（HyperTransport，超级传输）I2C（Inter-IC）I2C（Inter-Integrated Circuit，内置集成电路）IBASES（Intel Baseline AGP System Evaluation Suite，英特尔基线AGP系统评估套件）IC（integrate circuit，集成电路）ICH（Input/Output Controller Hub，输入/输出控制中心）ICH-S（ICH-Hance Rapids，ICH高速型）ICP（Integrated Communications Processor，整合型通讯处理器）IHA（Intel Hub Architecture，英特尔Hub架构）IMB（Inter Module Bus，隐藏模块总线）INTIN（Interrupt Inputs，中断输入）IPMAT（Intel Power Management Analysis Tool，英特尔能源管理分析工具）IR（infrared ray，红外线）IrDA（infrared ray，红外线通信接口，可进行局域网存取和文件共享）ISA（Industry Standard Architecture，工业标准架构）ISA（instruction set architecture，工业设置架构）K8HTB（K8 HyperTransport Bridge，K8闪电传输桥）LSI（Large Scale Integration，大规模集成电路）LPC（Low Pin Count，少针脚型接口）MAC（Media Access Controller，媒体存储控制器）MBA（manage boot agent，管理启动代理）MC（Memory Controller，内存控制器）MCA（Micro Channel Architecture，微通道架构）MCH（Memory Controller Hub，内存控制中心）MDC（Mobile Daughter Card，移动式子卡）MII（Media Independent Interface，媒体独立接口）MIO（Media I/O，媒体输入/输出单元）MOSFET（metallic oxide semiconductor field effecttransistor，金属氧化物半导体场效应晶体管）MRH-R（Memory Repeater Hub，内存数据处理中心）MRH-S（SDRAM Repeater Hub，SDRAM数据处理中心）MRIMM（Media-RIMM，媒体RIMM扩展槽）MSI（Message Signaled Interrupt，信息信号中断）MSPCE(Multiple Streams with Pipelining and Concurrent Execution，多重数据流的流水线式传输与并发执行）MT=MegaTransfers（兆传输率）MTH（Memory Transfer Hub，内存转换中心）MuTIOL（Multi-Threaded I/O link，多线程I/O链路）NGIO（Next Generation Input/Output，新一代输入/输出标准）NPPA（nForce Platform Processor Architecture，nForce平台处理架构）OHCI（Open Host Controller Interface，开放式主控制器接口）ORB（operation request block，操作请求块）ORS（Over Reflow Soldering，再流回焊接，SMT元件的焊接方式）P64H（64-bit PCI Controller Hub，64位PCI控制中心）PCB（printed circuit board，印刷电路板）PCBA（Printed Circuit Board Assembly，印刷电路板装配）PCI（Peripheral Component Interconnect，互连外围设备）PCI SIG（Peripheral Component Interconnect Special Interest Group，互连外围设备专业组）PDD（Performance Driven Design，性能驱动设计）PHY（Port Physical Layer，端口物理层）POST（Power On Self Test，加电自测试）PS/2（Personal System 2，第二代个人系统）PTH（Plated-Through-Hole technology，镀通孔技术）RE（Read Enable，可读取）QP（Quad-Pumped，四倍泵）RBB（Rapid BIOS Boot，快速BIOS启动）RNG（Random number Generator，随机数字发生器）RTC（Real Time Clock，实时时钟）KBC（KeyBroad Control，键盘控制器）SAP（Sideband Address Port，边带寻址端口）SBA（Side Band Addressing，边带寻址）SBC（single board computer，单板计算机）SBP-2（serial bus protocol 2，第二代串行总线协协）SCI（Serial Communications Interface，串行通讯接口）SCK (CMOS clock，CMOS时钟)SDU（segment data unit，分段数据单元）SFF（Small Form Factor，小尺寸架构）SFS（Stepless Frequency Selection，步进频率选项）SMA（Share Memory Architecture，共享内存结构）SMT（Surface Mounted Technology，表面黏贴式封装）SPI（Serial Peripheral Interface，串行外围设备接口）SSLL（Single Stream with Low Latency，低延迟的单独数据流传输）STD（Suspend To Disk，磁盘唤醒）STR（Suspend To RAM，内存唤醒）SVR（Switching Voltage Regulator，交换式电压调节）THT（Through Hole Technology，插入式封装技术）UCHI（Universal Host Controller Interface，通用宿主控制器接口）UPA（Universal Platform Architecture，统一平台架构）UPDG（Universal Platform Design Guide，统一平台设计导刊）USART（Universal Synchronous Asynchronous Receiver Transmitter，通用同步非同步接收传送器）USB（Universal Serial Bus，通用串行总线）USDM（Unified System Diagnostic Manager，统一系统监测管理器）VID（Voltage Identification Definition，电压识别认证）VLB（Video Electronics Standards Association Local Bus，视频电子标准协会局域总线）VLSI（Very Large Scale Integration，超大规模集成电路）VMAP（VIA Modular Architecture Platforms，VIA模块架构平台）VSB（V Standby，待命电压）VXB（Virtual Extended Bus，虚拟扩展总线）VRM（Voltage Regulator Module，电压调整模块）WE（Write Enalbe，可写入）WS（Wave Soldering，波峰焊接，THT元件的焊接方式）XT（Extended Technology，扩充技术）ZIF（Zero Insertion Force, 零插力插座）芯片组ACPI（Advanced Configuration and Power Interface，先进设置和电源管理）AGP（Accelerated Graphics Port，图形加速接口）BMS（Blue Magic Slot，蓝色魔法槽）I/O（Input/Output，输入/输出）MIOC: Memory and I/O Bridge Controller，内存和I/O桥控制器NBC: North Bridge Chip（北桥芯片）PIIX: PCI ISA/IDE Accelerator（加速器）PSE36: Page Size Extension 36－bit，36位页面尺寸扩展模式PXB: PCI Expander Bridge，PCI增强桥RCG: RAS/CAS Generator，RAS/CAS发生器SBC: South Bridge Chip（南桥芯片）SMB（System Management Bus，全系统管理总线）SPD（Serial Presence Detect，连续存在检测装置）SSB: Super South Bridge，超级南桥芯片TDP: Triton Data Path（数据路径）TSC: Triton System Controller（系统控制器）QPA: Quad Port Acceleration（四接口加速）3、显示设备AD（Analog to Digitalg，模拟到数字转换）ADC（Apple Display Connector，苹果专用显示器接口）ASIC（Application Specific Integrated Circuit，特殊应用积体电路）ASC（Auto-Sizing and Centering，自动调效屏幕尺寸和中心位置）ASC（Anti Static Coatings，防静电涂层）ASD（Auto Stereoscopic Display，自动立体显示）AGC（Anti Glare Coatings，防眩光涂层）AG（Aperture Grills，栅条式金属板）ARC（Anti Reflect Coating，防反射涂层）BLA: Bearn Landing Area（电子束落区）BMC（Black Matrix Screen，超黑矩阵屏幕）CCS（Cross Capacitance Sensing，交叉电容感应）cd/m^2（candela/平方米，亮度的单位）CDRS（Curved Directional Reflection Screen，曲线方向反射屏幕）CG-Silicon（Continuous Grain Silicon，连续微粒硅）CNT（carbon nano-tube，碳微管）CRC（Cyclical Redundancy Check，循环冗余检查）CRT（Cathode Ray Tube，阴极射线管）CVS（Compute Visual Syndrome，计算机视觉综合症）DA（Digital to Analog，数字到模拟转换）DDC（Display Data Channel，显示数据通道）DDWG（Digital Display Working Group，数字化显示工作组）DEC（Direct Etching Coatings，表面蚀刻涂层）Deflection Coil（偏转线圈）DFL（Dynamic Focus Lens，动态聚焦）DFP（Digital Flat Panel，数字平面显示标准）DFPG（Digital Flat Panel Group，数字平面显示标准工作组）DFS（Digital Flex Scan，数字伸缩扫描）DIC: Digital Image Control（数字图像控制）Digital Multiscan II（数字式智能多频追踪）DLP（digital Light Processing，数字光处理）DOSD: Digital On Screen Display（同屏数字化显示）DPMS（Display Power Management Signalling，显示能源管理信号）Dot Pitch（点距）DQL（Dynamic Quadrapole Lens，动态四极镜）DSP（Digital Signal Processing，数字信号处理）DSTN（Double layers Super Twisted Nematic，双层超扭曲向列，无源矩阵LCD）DTV（Digital TV，数字电视）DVI（Digital Visual Interface，数字化视像接口）ECD（ElectroChromic Display，电铬显示器）EFEAL（Extended Field Elliptical Aperture Lens，可扩展扫描椭圆孔镜头）FED（Field Emission Displays，电场显示器)Flyback Transformer（回转变压器）FPD（flat panel display，平面显示器）FRC: Frame Rate Control（帧比率控制）GLV（grating-light-valve，光栅亮度阀）HDMI（High Definition Multimedia Interface，高精度多媒体接口）HDTV（high definition television，高清晰度电视）HVD（High Voltage Differential，高分差动）IFT（Infinite FlatTube，无限平面管，三星丹娜）INVAR（不胀铜）IPS（in-plane switching，平面开关）LCD（liquid crystal display，液晶显示屏）LCOS: Liquid Crystal On Silicon（硅上液晶）LED（light emitting diode，光学二级管）L-SAGIC（Low Power-Small Aperture G1 wiht Impregnated Cathode，低电压光圈阴极管）LTPS（Low-Temperature Poly-Si，低温多晶硅）LVD（Low Voltage Differential，低分差动）LVDS（Low Voltage Differential Signal，低分差动信号）LRTC（LCD Response Time Compensation，液晶响应时间补偿）LTPS（Low Temperature Polysilicon，低温多硅显示器）MALS（Multi Astigmatism Lens System，多重散光聚焦系统）MDA（Monochrome Adapter，单色设备）Monochrome Monitor（单色显示器）MS: Magnetic Sensors（磁场感应器）MVA（multi-domain vertical alignment，广域垂直液晶队列）OEL（organic electro-luminescent，有机电镀冷光）OLED（Organic light-emitting diode，有机电激发光显示器）OSD（On Screen Display，同屏显示）PAC（psycho-acoustic compensation，心理声学补偿）P&D（Plug and Display，即插即显）PDP（Plasma Display Panel，等离子显示器）Porous Tungsten（活性钨）PPI（Pixel Per Inch，像素／英寸）RGB（Red、Blue、Green，红、蓝、绿三原色）ROP（raster operations，光栅操作）RSDS: Reduced Swing Differential Signal（小幅度摆动差动信号）SC（Screen Coatings，屏幕涂层）Single Ended（单终结）Shadow Mask（点状阴罩）SXGA（Super eXtended Graphics Array，超级扩展型图形阵列）STN（Super Twisted Nematic，超扭曲向列，无源矩阵）TCO（The Swedish Confederation of Professional Employees，瑞典专业工作人员联合会）TDT（Timeing Detection Table，数据测定表）TMDS（Transition Minimized Differential Signaling，转换极低损耗微分信号）TN（Twisted Nematic，扭曲液晶向列，无源矩阵LCD）TN+film（twisted nematic and retardation film，扭曲液晶向列+延迟薄膜）TICRG: Tungsten Impregnated Cathode Ray Gun（钨传输阴级射线枪）TFT（thin film transistor，薄膜晶体管，有源矩阵LCD）Trinitron（特丽珑）UCC（Ultra Clear Coatings，超清晰涂层）UFB（Ultra-Fine&Bright，新概念超亮度液晶显示屏）UXGA (Ultra Extended Graphics Array，极速扩展图形阵列）VAGP: Variable Aperature Grille Pitch（可变间距光栅）VBI: Vertical Blanking Interval（垂直空白间隙）VESA（Video Electronics Standards Association，视频电子标准协会）VGA（video graphics array，视频图像阵列）VDT（Video Display Terminals，视频显示终端）VRR: Vertical Refresh Rate（垂直扫描频率）VW（Virtual Window，虚拟视窗）XGA（eXtended Graphics Array，扩展型图形阵列）YUV（亮度和色差信号）4、视频3D：Three Dimensional，三维3DCG（3D computer graphics，三维计算机图形）3DS（3D SubSystem，三维子系统）A-Buffer（Accumulation Buffer，积聚缓冲）AA（Accuview Antialiasing，高精度抗锯齿）ADC（Analog to Digital Converter，模数传换器）ADI（Adaptive De-Interlacing，自适应交错化技术）AE（Atmospheric Effects，大气雾化效果）AFC（Advanced Frame Capture、高级画面捕获）AFR（Alternate Frame Rendering，交替渲染技术）Anisotropic Filtering（各向异性过滤）APPE（Advanced Packet Parsing Engine，增强形帧解析引擎）AR（Auto-Resume，自动恢复）AST（amorphous-silicon TFT，非晶硅薄膜晶体管）AV（Analog Video，模拟视频）AV（Audio & Video，音频和视频）B Splines（B样条）BAC（Bad Angle Case，边角损坏采样）Back Buffer，后置缓冲Backface culling（隐面消除）Battle for Eyeballs（眼球大战，各3D图形芯片公司为了争夺用户而作的竞争）Bilinear Filtering（双线性过滤）B.O.D.E（Body、Object、Design、Envioment，人体、物体、设计、环境渲染自动识别）BSP（Binary Space Partitioning，二进制空间分区）CBMC（Crossbar based memory controller，内存控制交叉装置）CBU（color blending unit，色彩混和单位）CEA（Critical Edge Angles，临界边角）CEM（cube environment mapping，立方环境映射）CG（C for Graphics/GPU，用于图形/GPU的可编程语言）CG（Computer Graphics，计算机生成图像）Clipping（剪贴纹理）Clock Synthesizer，时钟合成器compressed textures（压缩纹理）Concurrent Command Engine，协作命令引擎CSC（Colorspace Conversion，色彩空间转换）CSG (constructive solid geometry，建设立体几何）CSS（Content Scrambling System，内容不规则加密）DAC（Digital to Analog Converter，数模传换器）DCD（Directional Correlational De-interlacing，方向关联解交错）DCT（Display Compression Technology，显示压缩技术）DDC（Dynamic Depth Cueing，动态深度暗示）图像DDP（Digital Display Port，数字输出端口）DDS（Direct Draw Surface，直接绘画表面）Decal（印花法，用于生成一些半透明效果，如：鲜血飞溅的场面）DFP（Digital Flat Panel，数字式平面显示器）DFS: Dynamic Flat Shading（动态平面描影）,可用作加速Dithering（抖动）Directional Light，方向性光源DM（Displacement mapping，位移贴图）DME（Direct Memory Execute，直接内存执行）DOF（Depth of Field，多重境深）dot texture blending（点型纹理混和）DOT3（Dot product 3 bump mapping，点乘积凹凸映射）Double Buffering（双缓冲区）DPBM（Dot Product Bump Mapping，点乘积凹凸映射）DQUICK（DVD Qualification and Integration Kit，DVD资格和综合工具包）DRA（deferred rendering architecture，延迟渲染架构）DRI（Direct Rendering Infrastructure，基层直接渲染）DSP（Dual Streams Processor，双重流处理器）DVC（Digital Vibrance Control，数字振动控制）DVI（Digital Video Interface，数字视频接口）DVMT（Dynamic Video Memory Technology，动态视频内存技术）DxR: DynamicXTended Resolution（动态可扩展分辨率）DXTC（Direct X Texture Compress，DirectX纹理压缩，以S3TC为基础）Dynamic Z-buffering（动态Z轴缓冲区）,显示物体远近,可用作远景E-DDC（Enhanced Display Data Channel，增强形视频数据通道协议，定义了显示输出与主系统之间的通讯通道，能提高显示输出的画面质量）Edge Anti－aliasing（边缘抗锯齿失真）E-EDID（Enhanced Extended Identification Data，增强形扩充身份辨识数据，定义了电脑通讯视频主系统的数据格式）eFB（embedded Frame Buffer，嵌入式帧缓冲）eTM（embedded Texture Buffer，嵌入式纹理缓冲）Execute Buffers，执行缓冲区Embosing，浮雕EMBM（environment mapped bump mapping，环境凹凸映射）Extended Burst Transactions，增强式突发处理Factor Alpha Blending（因子阿尔法混合）Fast Z-clear，快速Z缓冲清除FB（fragment buffer，片段缓冲）FL（fragment list，片段列表）FW（Fast Write，快写，AGP总线的特殊功能）Front Buffer，前置缓冲Flat（平面描影）FL（Function Lookup，功能查找）FMC（Frictionless Memory Control，无阻内存控制）Frames rate is King（帧数为王）FRC（Frame Rate Control，帧率控制）FSAA（Full Scene/Screen Anti－aliasing，全景/屏幕抗锯齿）Fog（雾化效果）flip double buffered（反转双缓存）fog table quality（雾化表画质）F-Buffer（Fragment Stream FIFO Buffer，片段流先入先出缓冲区）GPT（Graphics Performance Toolkit，图形性能工具包）FRJS（Fully Random Jittered Super-Sampling，完全随机移动式超级采样）Fur（软毛效果）GART（Graphic Address Remappng Table，图形地址重绘表）GI（Global Illumination，球形光照）GIC（Gold Immersion Coating，化金涂布技术，纯金材质作为PCB最终层，提升信号完整性）GIF（Graphics Interchange Format，图像交换格式）Gouraud Shading，高洛德描影，也称为内插法均匀涂色GPU（Graphics Processing Unit，图形处理器）GTF（Generalized Timing Formula，一般程序时间，定义了产生画面所需要的时间，包括了诸如画面刷新率等）GTS（Giga Textel Sharder，十亿像素填充率）Guard Band Support（支持保护带）HAL（Hardware Abstraction Layer，硬件抽像化层）HDR（High Dynamic Range，高级动态范围）HDRL（high dynamic-range lighting，高动态范围光线）HDVP（High-Definition Video Processor，高精度视频处理器）HEL: Hardware Emulation Layer（硬件模拟层）HLSL（High Level Shading Language，高级描影语言）HMC（hardware motion compensation，硬件运动补偿）Hierarchical Z（Z分级）high triangle count（复杂三角形计数）HOS（Higher-Order Surfaces，高次序表面）HPDR（High-Precision Dynamic-Range，高精度动态范围）HRAA（High Resolution Anti－aliasing，高分辨率抗锯齿）HSI（High Speed Interconnect，高速内连）HSR（Hidden Surface Removal，隐藏表面移除）HTP（Hyper Texel Pipeline，超级像素管道）HWMC（Hardware Motion Compensation，硬件运动补偿）ICD（Installable Client Driver，可安装客户端驱动程序）iDCT（inverse Discrete Cosine Transformation，负离散余弦转换）IDE（Integrated Development Environment，集成开发环境）Immediate Mode，直接模式IMMT（Intelligent Memory Manager Technology，智能内存管理技术）Imposters（诈欺模型）IPEAK GPT（Intel Performance Evaluation and Analysis Kit - Graphics Performance Toolkit，英特尔性能评估和分析套件 - 图形性能工具包）IPPR: Image Processing and Pattern Recognition（图像处理和模式识别）IR（Immediate Rendering，直接渲染）IRA（immediate-mode rendering architecture，即时渲染架构）IQ（inverse quantization，反转量子化）ITC（Internal True Color，内部真彩色）IVC（Indexed Vertex Cache，索引顶点缓存）JFAA（Jitter Free Anti Aliasing，自由跳跃进抗锯齿）JGSS（Jittered Grid Super-Sampling，移动式栅格超级采样）JPRS（Jittered pseudo random sampling，抖动假取样）Key Frame Interpolation，关键帧插补large textures（大型纹理）LE（low end，低端）LF（Linear Filtering，线性过滤，即双线性过滤）LFB（Linear Frame-Buffer，线性帧缓冲）LFM（Light Field Mapping，光照区域贴图）lighting（光源）lightmap（光线映射）LMA（Lightspeed memory Architecture，光速内存架构）Local Peripheral Bus（局域边缘总线）LOD（Levels-of-Detail，细节级）Lossless Z Compression，无损Z压缩LPF（Low-past filter，低通道滤波器）LSR（Light Shaft Rendering，光线轴渲染）mipmapping（MIP映射）MAC（Mediocre Angle Case，普通角采样）Matrix Vertex Blending，矩阵顶点混和MCM（Multichip Module，多芯片模块）Membrane lighting，隔膜光线Mipmap LOD Bias Adjustment（映射LOD偏移调节）Modulate（调制混合）Motion Compensation，动态补偿motion blur（模糊移动）MPPS：Million Pixels Per Second，百万个像素/秒MRT（Multiple Render Targets，多重渲染目标）MSAA（multisampling Scene/Screen Anti－aliasing，多重采样抗锯齿）Multiplicative Texture Blending（乘法纹理混合）Multi-Resolution Mesh，多重分辨率组合Multi Threaded Bus Master，多线程主控Multitexture（多重纹理）MVSD（Motion Vector Steered de-interlacing，移动向量控制解交错）MXM（Mobile PCI Express Module，移动PCI Express模块）NURBS（Non Uniform Relational B Splines，非统一相关B样条）nerest Mipmap（邻近MIP映射，又叫点采样技术）NGP（Next-Generation Graphics Port，下一代图形接口）NSR（nVidia Shading Rasterizer，nVidia描影光栅引擎）NXL（NVIDIA XPress Link，nViadia X紧迫链路）OGSS（Ordered Grid Super-Sampling，顺序栅格超级采样）ORB（Online ResultBrowser，在线分数浏览）OTES（Outside Thermal Exhaust System，向外热排气系统）Overdraw（透支，全景渲染造成的浪费）partial texture downloads（并行纹理传输）Parallel Processing Perspective Engine（平行透视处理器）。
TESCAN MIRA 3 E-Beam Lithography说明书
GENERAL PROCESS AND OPERATION SPECIFICATIONTescan MIRA3 Electron Beam LithographyI.SCOPEThe purpose of this document is to describe requirements and basic operatinginstructions for the TESCAN MIRA 3, E-Beam Lithography tool. This tool is intended fornano-patterning by electron beam.II.SAFETYA.This machine’s detailed sa fety information can be read in the User Manual.B.Record the tool malfunction, breakage, etc. in the log-sheet and send an email tostaff. Never try to fix anything by yourself.III.APPLICABLE DOCUMENTS, MATERIALS AND REQUIREMENTSA.For more information about the physical description and operation of theTescan EBL tool, please request the complete user’s manual.IV.OPERATION1.Loading the samplea)Log into Mira-TC software by clicking on MIRA3-TESCAN icon and entering username and password.b)Vent the chamber by clicking on the VENT button on the Vacuum Panel and waitto reach “Venting finished” status. (Note: make sure the stage is at homeposition (X=0; Y=0; Z=40; Rot & Tilt = 0 ) before you vent the chamber. If not,click on Home button in stage control panel).c)Open the chamber gently and load the sample onto sample holder. User musthave clean gloves on while loading and unloading the sample.d)Gently close the chamber and hold the chamber’s door.e)Pump the chamber by clicking on the PUMP button on the Vacuum Panel andwait to reach “Vacuum ready” status.2.Turning on the electron beama)Move the stage above gold standard position.b)Open the “Beam Blanker” panel in the main SEM menu and select “Enablebeam on acquisition”.c)Select SE detector in the SEM Detectors & Mixer panel. Make sure the BSEdetector is retracted.d)Set the exposure parameters including acceleration voltage (HV; 30 kV isrecommended) and Beam Index (BI; less than or equal to 5 is recommended) inInfo Panel. (Note: for large patterns where both dimensions are in the range offew tens of microns and resolution is not as critical, use BI 8-10 to reduce theexposure time (higher BI is equivalent to higher beam current)).e)Turn the electron beam on by clicking on the BEAM ON button on the ElectronBeam panel.f)Perform focus on gold standard at 50kx by turning WD knob on Control Panel.Once the gold standard is focused, gradually decrease WD&Z in stage controlpanel (WD&Z = 15, 10, and then 6.0) and re-perform focus until gold standard isfocused at WD 6.0.3.Electron column alignmenta)Perform fine focusing at magnifications ≥200kx.b)Perform gun centering by automatic procedure. Click on AUTO GUN CENTERINGon the Electron Beam panel.c)Perform Column Centering (Centering the aperture) manually. Click onicon on the toolbar and use control panel knobs ( for X and for Y) orthe trackball to center the aperture.d)Correct Astigmatism (Correcting non-circularity in electron beam). Click onicon on the toolbar and use control panel knobs or the trackball.e)Re-Perform focusing.4.Exposurea)Open the DrawBeam panel in the main Tools menu.b)Create a new project/open a saved project/ import from GDSII format byclicking on the / / icon.c)Click on the icon in the DrawBeam panel to open the DrawBeam Processpanel. Enter the suitable Dose(s) and Spacing by double click on Dose window.(Note: keep the spacing at minimum possible value;(1) Exp pitch should be ≥ 4×DAC resolution (DAC res. depends on view field)(2) Exp pitch = spot size × spacing.d)Move the stage to the faraday cup. Magnify to 50kx (the entire screen should beblack; i.e. all the electrons should be collected by faraday cup). Measure thebeam current by clicking on icon in the DrawBeam Process panel. Thecorrect value of the beam current will be automatically inserted in the panel.e)Move the stage to the edge of the sample and find the scratch you made onsample after spin coating. Click on Define UV and then Align sample to alignsample with x and y directions.f)Go to the tip of the scratch. Take caution not to expose the sample. Find a tinyparticle and try to bring the particle on focus without changing WD. In order todo that you need to change Z. Keep changing Z using buttons untilyou see a clear image of the particle.g)Open the Analysis & Measurement panel in the main Tools menu (steps 4.4.7-4.4.9 are optional if step 4.4.6 is performed properly).h)Click on the New Point/line button and place the point (Magnification should be400kx). Start and stop the burning by clicking on the icon. The burningtime is 10-20 seconds.i)Perform final focusing and astigmatism correction on the spot to achieve anideal circular spot. Repeat burning and focusing, if necessary.j)Blank the beam by clicking on the Single button on the Info Panel.k)Move the stage to exposure location by entering new X and/or Y coordinates.l)Start the exposure by clicking on button in the DrawBeam Process panel.Move the stage and start another exposure, if needed.m)After exposure is finished, turn the beam off by clicking on the BEAM ON button on the Electron Beam panel.5.Unloading the samplea)Move the stage to home location by clicking on home button in Stage ControlPanel.b)Vent the chamber by clicking on the VENT button on the Vacuum Panel and waitto reach “Venting finished” status.c)Open the chamber gently and unload the sample.d)Gently close the chamber and hold the chamber’s door.e)Pump the chamber by clicking on the PUMP button on the Vacuum Panel andwait to reach “Vacuum ready” status.f)Log off the software. Click on the log off in the main tools menu. You will beasked two question: 1) do you really wish to log off: Yes 2) Go to the STANDBYmode: Nog)Fill out the log-sheetNORMAL OPERATIONSIGNATURES AND REVISION HISTORYa.Author of this document: Mitchell Roseliusb.Author Title or Role: Student Technicianc.Date: 2/25/2021d.Revision: Revision ae.Revision notes: Added: film stress measurement procedure, film roughnessmeasurement procedure, operation warnings (see Safety D-F). Approvals:Technical Manager Signature:________________________________________Date: ___________________________________________Revision History:Appendix A – Examples for Writing Circles, Lines, Rings, and TextsAppendix B – PMMA Spin Coating and Developing PMMA is purchased from Micro ChemSpin Coating:Step 1: 500 rpm, 5 seconds, 100 rpm/sStep 2: 3000 rpm, 45 seconds, 500 rpm/sSoft baking: 185 C for 90 secondsThickness: 950 PMMA A2: ~ 80 nm ; 950 PMMA A4: ~ 240 nmDeveloper: 1:3 MIBK:IPA (MIBK: 4-Methyl-2-pentanone; purchased from Sigma Aldrich) Develop time: gently shaking for 60 secondsWash thoroughly with DI Water after developDry with N2.。
电子束光刻技术研究
电子束光刻技术研究摘要：介绍了纳米加工领域的关键技术——电子束光刻技术及其最新进展。
简要介绍了电子束光刻技术和目前这种技术所存在的技术缺陷和最新的研究成果和解决办法，如：关于邻近效应的解决，关于电子束高精度扫描成像曝光效率很低的问题，如电子束与其他光学曝光系统的匹配和混合光刻等问题，以及关于抗蚀剂工艺的最新进展等。
关键词：电子束光刻技术邻近效应电子束高精度扫描成像电子束与其他光学曝光系统的匹配混合光刻抗蚀剂工艺Abstract: This paper introduces the key technology——electron beam lithography technology and the latest developments in the field of nanofabrication. A brief introduction and electron beam lithography technology currently exists drawback of this technology and the latest research results and solutions, such as: the effect on neighboring settlement, on the low-precision electron beam exposure scanning imaging efficiency issues, such as electron beam mixing and matching and other optical lithography exposure system and other issues, as well as the latest developments on the resist process and the like.一：概述电子束光刻与传统意义的光刻(区域曝光)加工不同，其设备如图1所示，它是利用电子束在涂有电子抗蚀剂的晶片上直接描画或投影复印图形的技术。
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Figure 2-10: Measured contrast curves for PMMA developed in 3:1 IPA:MIBK at various temperatures. The initial resist film thickness was 160 nm and the development time was 60 seconds, except in the 40°C and -50°C cases (120 seconds) and the -60°C case (600 seconds), where longer development times were needed to show any measurable dissolution at all.
Figure 3-5: Forward scattering coefficients as a function of beam energy for various thicknesses of PMMA, calculated using CASINO, a free Monte Carlo modeling program. The forwarding scattering width decreases dramatically as the beam energy is increased, but using thicker resist results in more scattering.
Resolution limit: forward scattering and lateral diffusion
Secondary electrons and its lateral diffusion Figure 3-6: Schematic illustration of secondary electrons (SE), which typically travel/diffuse normal to the beam. (low energy SE is responsible for resist exposure) Backscattered electron
6 PhD thesis, Bryan M. Cord, MIT, June 2009
Why weaker forward scattering at higher energy
Forward scattering: deflect primary electron, generate secondary electron to expose the resist For simplicity, assume the electric field from the secondary electron acted on the primary electron is uniform covering a distance d. x E Secondary electron d z
Electron beam lithography (EBL)
1. Overview and resolution limit. 2. Electron source (thermionic and field emission).
3. Electron optics (electrostatic and magnetic lens).
8
Resolution limit: forward scattering and beam diameter
Figure 3-11: “Critical thickness” of resist as a function of beam energy. At resist thicknesses above critical thickness, forward scattering limits resolution, whereas below the critical thickness the only resolution limiter is the beam diameter, which is at least theoretically energy-independent.
1
Resolution enhancement process: ultrasonic development
Ultrasonic helps to remove exposed resist (for positive tone) from inside narrow trenches.
2
Resolution enhancement process: low temperature development (ZEP)
5 PhD thesis, Bryan M. Cord, MIT, June 2009
IPA: iso-propanol; MIBK: methyl isobutyl ketone
Forward scattering
1 f (r ) α: forward scattering range, with unit nm (1 ) 1 r 2 r 2 2 exp 2 exp
4 PhD thesis, Bryan M. Cord, MIT, June 2009
Cold (to -60oC) development of PMMA
Best contrast (steepest slope) at - lower temperature, need higher dose to expose, but PMMA becomes negative at doses >3000 C/cm2 (i.e. the already exposed PMMA with short chain begins to cross-link upon further exposure).
Contrast curve for ZEP-520 at various temperatures
Contrast as a function of development temperature. Comparison of edge roughness of ZEP-520 resist lines (40nm wide) developed at (top) room temperature; (bottom) -4oC. 3
Backscattered electron
Forward-scattered electron Whether it is forward scattering or beam spot size that limits the minimum linewidth, the effect of SE diffusion is to further broaden the line/reduce the resolution.
Incident/primary electron
dv x F eE ma m dt
Higher energy, larger Vz, so smaller Vx.
resist
d Px mv x eEt eE vz 1 vx vz
V: velocity P: momentum A: acceleration)
ECE 730: Fabrication in the nanoscale: principles, technology and applications Instructor: Bo Cui, ECE, University of Waterloo; http://ece.uwaterloo.ca/~bcui/ Textbook: Nanofabrication: principles, capabilities and limits, by Zheng Cui
4. Aberrations (spherical, chromatic, diffraction, astigmation). 5. EBL systems (raster/vector scan, round/shaped beam) 6. Interaction of electrons with matter (scattering, x-ray, Auger). 7. Proximity effect and how to reduce it. 8. Resist contrast and sensitivity. 9. Several popular resist materials. 10. High resolution EBL, resolution limit. 11. Grey-scale EBL for 3D structure fabrication. 12. Anti-charging techniques. 13. Electron projection and multi-beam lithography
Low T development increases contrast, but decreases sensitivity
Resolution enhancement process: low temperature development (PMMA)
Figure 2-6: Schematic illustration of one possible explanation of resolution-enhancing mechanism of cold development. 1) When a feature is exposed in PMMA, the soluble resist in the exposed region is surrounded by a boundary region of resist that, due to the initial polydispersity of the PMMA and random nature of chain scission, contains both soluble and insoluble polymer chains. 2) During development, this region phase-separates, with the soluble chains diffusing toward the soluble region and the insoluble chains diffusing toward the insoluble region. 3) The result is a region of soluble PMMA that is larger than the initial exposed feature, resulting in a degradation in resolution. Cold development helps prevent this by limiting the diffusion that can occur in the boundary region, since diffusion is a thermally-dependent process.