2SB0790Q资料

VCB = −25 V, IE = 0 VCE = −20 V, IB = 0
Collector-emitter cutoff current (Base open)
si
hFE1 *2
VCE = −2 V, IC = − 0.5 A VCE = −2 V, IC = −1 A
90
vi
25
ea s
Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−100 IC / IB = 10
Collector power dissipation PC (mW)
700 600 500 400 300 200 100 0
Collector current IC (mA)
−10
− 0.8
− 0.6
−1 Ta = 75°C 25°C −25°C
− 0.4
M Di ain sc te on na tin nc ue e/ d
− 0.2
− 0.1
0
20
40
60
80 100 120 140 160
0
0
−1
−2
−3
−4
−5
−6
− 0.01 − 0.01
− 0.1
−1
−10
Ambient temperature Ta (°C)
*1
VCE(sat) VBE(sat) fT Cob
IC = −500 mA, IB = −50 mA IC = −500 mA, IB = −50 mA
e
Pl
VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz
Collector output capacitance (Common base, input open circuited)
Transistors
2SB0790 (2SB790)
Silicon PNP epitaxial planar type
For low-frequency output amplification
6.9±0.1
(0.4)
Unit: mm
2.5±0.1 (1.0)
(1.0) 3.5±0.1 2.0±0.2 2.4±0.2
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
Collector power dissipation
600 150
mW °C °C
−55 to +150
Conditions
Min −25 −7 −20
1.25±0.05
Rating
Unit
0.55±0.1
1: Base 2: Collector 3: Emitter M-A1 Package
Unit V V V µA µA V V MHz pF
4.1±0.2
4.5±0.1
1
2SB0790
PC Ta
800
−1.2
IC VCE
Ta = 25°C IB = −10 mA −1.0 −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 90 to 155 R 130 to 220
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2003 SJC00057BED
at io n.
Max − 0.1 −1 220 − 0.4 −1.2 25
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
■ Features
• Low collector-emitter saturation voltage VCE(sat) • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
0 −1
−10
Collector-base voltage VCB (V)
2
Pl
−100
ea s
e
vi
IE = 0 f = 1 MHz Ta = 25°C
si
SJC00057BED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
Tstg
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
or m
Typ 150 15
− 0.5
A
(2.5)
(2.5)
IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open) Forward current transfer ratio *1
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
80 70 60 50 40 30 20 10
(1.5) (1.5)
R 0.9 R 0.7
M Di ain sc te on na tin nc ue e/ d
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)
1.0±0.1
(0.85)
0.45±0.05
−25 −20 −7 −1
V V
Emitter-base voltage (Collector open) Collector current
V
3
2
1
Peak collector current
A
Junction temperature Storage temperature
Collector-emitter voltage VCE (V)
Collector current IC (A)
−100
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
600
VCE = −2 V
320 280 240 200 160 120 80 40
Forward current transfer ratio hFE
−10
25°C
−1
Ta = −25°C 75°C
300 Ta = 75°C 25°C
200
− 0.1
100