IR场效应管MOS管,创立翔

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MOS管工作原理及芯片汇总

MOS管工作原理及芯片汇总一：MOS管参数解释MOS管介绍在使用MOS管设计开关电源或者马达驱动电路的时候，一般都要考虑MOS的导通电阻，最大电压等，最大电流等因素。

MOSFET管是FET的一种，可以被制造成增强型或耗尽型，P沟道或N沟道共4种类型，一般主要应用的为增强型的NMOS管和增强型的PMOS管，所以通常提到的就是这两种。

这两种增强型MOS管，比较常用的是NMOS。

原因是导通电阻小且容易制造。

所以开关电源和马达驱动的应用中，一般都用NMOS。

在MOS管内部，漏极和源极之间会寄生一个二极管。

这个叫体二极管，在驱动感性负载(如马达)，这个二极管很重要，并且只在单个的MOS管中存在此二极管，在集成电路芯片内部通常是没有的。

MOS管的三个管脚之间有寄生电容存在，这不是我们需要的，而是由于制造工艺限制产生的。

寄生电容的存在使得在设计或选择驱动电路的时候要麻烦一些，但没有办法避免。

MOS管导通特性导通的意思是作为开关，相当于开关闭合。

NMOS的特性，Vgs大于一定的值就会导通，适合用于源极接地时的情况(低端驱动)，只要栅极电压达到一定电压（如4V或10V, 其他电压，看手册）就可以了。

PMOS的特性，Vgs小于一定的值就会导通，适合用于源极接VCC时的情况(高端驱动)。

但是，虽然PMOS可以很方便地用作高端驱动，但由于导通电阻大，价格贵，替换种类少等原因，在高端驱动中，通常还是使用NMOS。

MOS开关管损失不管是NMOS还是PMOS，导通后都有导通电阻存在，因而在DS间流过电流的同时，两端还会有电压，这样电流就会在这个电阻上消耗能量，这部分消耗的能量叫做导通损耗。

选择导通电阻小的MOS管会减小导通损耗。

现在的小功率M OS管导通电阻一般在几毫欧，几十毫欧左右MOS在导通和截止的时候，一定不是在瞬间完成的。

MOS两端的电压有一个下降的过程，流过的电流有一个上升的过程，在这段时间内，MOS管的损失是电压和电流的乘积，叫做开关损失。

IXYS绝缘栅场效应管（MOS管）中国总代低价供应

上海远求自动化科技有限公司是一家专业从事电子元器件及自动化产品销售和技术服务的高新企业。

通过十几年坚持不懈的努力远求自动化现已成长为国内电子元器件及自动化行业首选的合作伙伴。

公司专业代理德国艾赛斯IXYS、德国西门康/赛米控SEMIKRON、德国英飞凌/欧派克Infineon/EUPEC、日本富士FUJI、日本东芝TOSHIBA、日本三菱Mitsubishi、美国国际整流器IR、瑞士ABB、英国丹尼克斯DYNEX等功率半导体器件常备库存特价供应欢迎您的来电、来函询价我们将竭诚为您服务业务联系电?21-64421290 传真************业务QQ1051086256 手机158****7980邮箱网址联系人沈阳艾赛斯功率半导体模块/艾赛斯MOSFET/艾赛斯场效应晶体管/艾赛斯MOS管模块/艾赛斯IGBT模块/艾赛斯可控硅模块/艾赛斯二极管/艾赛斯晶闸管模块/艾赛斯二极管模块/艾赛斯整流桥模块/艾赛斯三相整流桥/艾赛斯单相整流桥/艾赛斯快速二极管模块/艾赛斯快恢复二极管模块/艾赛斯肖特基/艾赛斯电源管理IC等IXYS功率半导体模块/IXYS MOSFET/IXYS场效应晶体管/IXYS MOS管模块/IXYS IGBT模块/IXYS可控硅模块/IXYS二极管/IXYS晶闸管模块/ IXYS二极管模块/IXYS整流桥模块/IXYS三相整流桥/IXYS单相整流桥/IXYS快速二极管模块/IXYS快恢复二极管模块/IXYS肖特基/IXYS电源管理IC等---------------------------------------------------------------------------------------------------------------------- 专业代理德国艾赛斯IXYS全系列产品库存充足全国价格最低●Trench Gate Power MOSFETs Very Low RDSonIXTP64N055T IXTY64N055TIXTC220N055T IXTC240N055T IXTC280N055T IXTF280N055T IXTA220N055T IXTA220N055T7 IXTH220N055T IXTP220N055T IXTQ220N055T IXTA240N055T IXTA240N055T7 IXTH240N055T IXTP240N055T IXTQ240N055T IXTH280N055T IXTQ280N055T IXTV280N055T IXTV280N055TS IXTU12N06T IXTY12N06T IXTP55N075T IXTY55N075T IXTC200N075T IXTC220N075T IXTC250N075T IXTF250N075T IXTA200N075T IXTA200N075T7 IXTH200N075T IXTP200N075T IXTQ200N075T IXTA220N075T IXTA220N075T7 IXTH220N075T IXTP220N075T IXTQ220N075T IXTH250N075T IXTQ250N075T IXTV250N075T IXTV250N075TS IXTP50N085T IXTY50N085T IXTA70N085T IXTP70N085T IXTA88N085TIXTA88N085T7 IXTP88N085T IXTC180N085T IXTC200N085T IXTC230N085T IXTF230N085T IXTA152N085T IXTA152N085T7 IXTH152N085T IXTP152N085T IXTQ152N085T IXTA180N085T IXTA180N085T7 IXTH180N085T IXTP180N085T IXTQ180N085T IXTA200N085T IXTA200N085T7 IXTH200N085T IXTP200N085T IXTQ200N085T IXTH230N085T IXTQ230N085T IXTV230N085T IXTV230N085TS IXTP44N10T IXTY44N10T IXTA60N10T IXTP60N10T IXTA80N10T IXTA80N10T7 IXTP80N10T IXTC160N10T IXTC180N10T IXTC200N10T IXTF200N10TIXTA130N10T IXTA130N10T7 IXTH130N10T IXTP130N10T IXTQ130N10TIXTA160N10T IXTA160N10T7 IXTH160N10T IXTP160N10T IXTQ160N10TIXTA180N10T IXTA180N10T7 IXTH180N10T IXTP180N10T IXTQ180N10TIXTH200N10T ICTN200N10T IXTQ200N10T IXTV200N10T IXTV200N10TSIXTN320N10T IXUN350N10 IXTA42N15T IXTP42N15T IXTA56N15T IXTP56N15T IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T IXTA102N15TIXTH102N15T IXTP102N15T IXTQ102N15T IXTH130N15T IXTQ130N15TIXTV130N15TS IXTH160N15T IXFH150N17T IXTH150N17T IXTA32N20TIXTP32N20T IXTA48N20T IXTH48N20T IXTP48N20T IXTQ48N20T IXTC102N20TIXTA60N20T IXTP60N20T IXTQ60N20T IXTA86N20T IXTH86N20T IXTP86N20T IXTQ86N20T IXTH102N20T IXTQ102N20T IXTV102N20T IXTV102N20TSIXTH130N20T IXTV130N20TS IXTA50N25T IXTH50N25T IXTP50N25TIXTQ50N25T IXTC110N25T IXTA76N25T IXTH76N25T IXTP76N25T IXTQ76N25T IXTH86N25T IXTQ86N25T IXTV86N25T IXTH96N25T IXTQ96N25T IXTV96N25T IXTH110N25T IXTV110N25TS IXTA50N28T IXTQ80N28T---------------------------------------------------------------------------------------------------------------------- ●TrenchT2TM Power MOSFETsIXTA100N04T2 IXTP100N04T2IXTA120N04T2 IXTP120N04T2 IXTA220N04T2 IXTP220N04T2 IXTA220N04T2-7 IXTA90N055T2 IXTP90N055T2 IXTA110N055T2 IXTP110N055T2 IXTA200N055T2 IXTP200N055T2 IXTA70N075T2 IXTP70N075T2 IXTA90N075T2 IXTP90N075T2 IXTA170N075T2 IXTP170N075T2---------------------------------------------------------------------------------------------------------------------- ●PolarTM N-Channel Power MOSFETs Low Voltage TypesIXTA110N055P IXTP110N055P IXTQ110N055P IXTQ150N06P IXTQ200N06P IXTA75N10PIXTP75N10P IXTQ75N10P IXTQ110N10P IXTT110N10P IXTR200N10PIXTQ140N10P IXTT140N10P IXTK170N10P IXTQ170N10P IXTT170N10PIXTK200N10P IXTA62N15P IXTP62N15P IXTQ62N15P IXTQ96N15P IXTT96N15P IXTQ120N15P IXTT120N15P IXTK150N15P IXTQ150N15P IXTK180N15PIXTP50N20PM IXTA50N20P IXTP50N20P IXTQ50N20P IXTQ74N20P IXTT74N20P IXTH96N20P IXTQ96N20P IXTT96N20P IXTK120N20P IXTQ120N20PIXTK140N20P IXTA42N25P IXTP42N25P IXTQ42N25P IXTQ64N25P IXTT64N25P IXTK82N25P IXTQ82N25P IXTT82N25P IXTK100N25P IXTQ100N25PIXTT100N25P IXTK120N25P IXTA36N30P IXTP36N30P IXTQ36N30P IXTQ52N30P IXTT52N30P IXTQ69N30P IXTT69N30P IXTH88N30P IXTK88N30P IXTQ88N30P IXTT88N30P IXTK102N30P IXTP1R6N50P IXTY1R6N50P IXTP2R4N50PIXTY2R4N50P IXTA3N50P IXTP3N50P IXTY3N50P IXTP8N50PM IXTA5N50P IXTP5N50P IXTU5N50P IXTY5N50P IXTA6N50P IXTP6N50P IXTP12N50PMIXTA8N50P IXTP8N50P IXTA12N50P IXTI12N50P IXTP12N50P IXTC26N50P IXTA16N50P IXTP16N50P IXTP16N50PM IXTQ16N50P IXTH22N50P IXTQ22N50P IXTV22N50P IXTV22N50PS IXTQ26N50P IXTT26N50P IXTV26N50PIXTV26N50PS IXTH30N50P IXTQ30N50P IXTT30N50P IXTV30N50PIXTV30N50PS IXTH36N50P IXTQ36N50P IXTT36N50P IXTV36N50PIXTV36N50PS IXTQ44N50P IXTP1R4N60P IXTU1R4N60P IXTY1R4N60PIXTP2N60P IXTY2N60P IXTA3N60P IXTP3N60P IXTY3N60P IXTA4N60PIXTP4N60P IXTU4N60P IXTY4N60P IXTP7N60PM IXTA5N60P IXTP5N60PIXTP10N60PM IXTA7N60P IXTP7N60P IXTP18N60PM IXTA10N60P IXTI10N60P IXTP10N60P IXTP14N60PM IXTA14N60P IXTP14N160P IXTQ14N60PIXTQ18N60P IXTV18N60P IXTV18N60PS IXTQ22N60P IXTV22N60PIXTV22N60PS IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60PIXTV26N60PS IXTH30N60P IXTQ30N60P IXTT30N60P IXTV30N60PIXTV30N60PS IXTA2N80P IXTP2N80P IXTU2N80P IXTY2N80P IXTA4N08PIXTP4N08P IXTA08N100P IXTP08N100P IXTY08N100P IXTA1N100P IXTP1N100P IXTY1N100P IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P IXTA2N100PIXTP2N100P IXTY2N100P IXTA3N100P IXTH3N100P IXTP3N100P IXTA06N120P IXTP06N120P IXTA08N120P IXTP08N120P IXTA1N120P IXTP1N120PIXTA1R4N120P IXTP1R4N120P IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P ---------------------------------------------------------------------------------------------------------------------- 欢迎您的来电、来函询价我们将竭诚为您服务业务联系电话************传真************业务QQ1051086256 手机158****7980邮箱网址/ 联系人沈阳---------------------------------------------------------------------------------------------------------------------- 专业代理德国艾赛斯IXYS全系列产品库存充足全国价格最低●PolarN-Channel HiperFET with Fast Intrinsic Diode Low Voltage TypesIXFC110N10P IXFH110N10P IXFV110N10P IXFV110N10PS IXFR200N10P IXFH140N10PIXFT140N10P IXFH170N10P IXFK170N10P IXFK200N10P IXFN200N10PIXFX200N10P IXFC96N15P IXFH96N15P IXFV96N15P IXFV96N15PSIXFR180N15P IXFH120N15P IXFT120N15P IXFH150N15P IXFK150N15PIXFN180N15P IXFK180N15P IXFX180N15P IXFC74N20P IXFH74N20PIXFV74N20P IXFV74N20PS IXFR140N20P IXFH96N20P IXFT96N20P IXFV96N20P IXFN140N20P IXFH120N20P IXFK120N20P IXFK140N20P IXFH100N25PIXFK120N25P IXFX120N25P IXFC52N30P IXFH52N30P IXFV52N30PIXFV52N30PS IXFR102N30P IXFH69N30P IXFT69N30P IXFR140N30PIXFN102N30P IXFH88N30P IXFK88N30P IXFK102N30P IXFN140N30PIXFK140N30P IXFX140N30P IXFP3N50PM IXFP5N50PM IXFP8N50PMIXFP120N50PM IXFC16N50P IXFA12N50P IXFP12N50P IXFC26N50P IXFA16N50P IXFH16N50P IXFP16N50P IXFC36N50P IXFR36N50P IXFH22N50P IXFV22N50P IXFV22N50PS IXFR44N50P IXFH26N50P IXFV26N50P IXFV26N50PS IXFH30N50P IXFT30N50P IXFV30N50P IXFV30N50PS IXFR64N50P IXFH36N50P IXFT36N50P IXFV36N50P IXFV36N50PS IXFH44N50P IXFK44N50P IXFT44N50P IXFR80N50P IXFN64N50P IXFK64N50P IXFX64N50P IXFN80N50P IXFL100N50P IXFK80N50P IXFX80N50P IXFN100N50P IXFB100N50P IXFC14N60P IXFA10N60P IXFP10N60P IXFC22N60P IXFA14N60P IXFH14N60P IXFP14N60P IXFC30N60P IXFR30N60P IXFH18N60P IXFV18N60P IXFV18N60PS IXFR36N60P IXFH22N60P IXFV22N60P IXFV22N60PS IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS IXFH30N60P IXFT30N60P IXFV30N60P IXFV30N60PS IXFR48N60P IXFH36N60P IXFK36N60P IXFT36N60P IXFR64N60P IXFN48N60P IXFK48N60P IXFX48N60P IXFN64N60P IXFK64N60P IXFX64N60P IXFB82N60P IXFL82N60P IXFN82N60P IXFP7N80PM IXFC10N80P IXFA7N80P IXFI7N80P IXFP7N80P IXFC12N80P IXFC14N80PIXFC16N80P IXFA10N80P IXFH10N80P IXFP10N80P IXFQ10N80P IXFC20N80P IXFR20N80P IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS IXFH14N80P IXFQ14N80P IXFR24N80P IXFT14N80P IXFV14N80P IXFV14N80PS IXFH16N80P IXFT16N80P IXFV16N80P IXFV16N80PS IXFH20N80P IXFT20N80P IXFV20N80P IXFV20N80PS IXFR32N80P IXFH24N80P IXFK24N80P IXFT24N80P IXFR44N80P IXFN32N80P IXFK32N80P IXFX32N80P IXFN44N80P IXFL60N80P IXFK44N80P IXFX44N80P IXFN60N80P IXFB60N80P IXFA4N100P IXFP4N100P IXFA5N100P IXFP5N100P IXFA7N100P IXFP7N100P IXFR15N100P IXFH10N100PIXFV10N100P IXFV10N100PS IXFR20N100P IXFH12N100P IXFR12N100PIXFV12N100P IXFV12N100PS IXFH15N100P IXFV15N100P IXF V15N100PSIXFR26N100P IXFR32N100P IXFH20N100P IXFT20N100P IXFN26N100PIXFK26N100P IXFX26N100P IXFN32N100P IXFL38N100P IXFK32N100PIXFX32N100P IXFL44N100P IXFN44N100P IXFN38N100P IXFB44N100PIXFR30N110P IXFL40N110P IXFN30N110P IXFL36N110P IXFK30N110PIXFX30N110P IXFN40N110P IXFN36N110P IXFB40N110P IXFR16N120PIXFH12N120P IXFV12N120P IXFV12N120PS IXFR20N120P IXFR26N120PIXFH16N120P IXFT16N120P IXFL30N120P IXFK20N120P IXFX20N120PIXFN20N120P IXFN26N120P IXFL32N120P IXFK26N120P IXFX26N120PIXFB30N120P IXFN30N120P IXFN32N120P---------------------------------------------------------------------------------------------------------------------- ●Legacy Standard N-Channel Power MOSFETIXTA1N80 IXTP1N80IXTY1N80 IXTA2N80 IXTP2N80 IXTU01N100 IXTY01N100 IXTA1N100IXTH1N100 IXTP1N100 IXTT1N100 IXTP2N100 IXTA05N100 IXTP05N100IXTA3N120 IXTH3N120 IXTP3N120 IXTH6N120 IXTT6N120 IXTH12N120---------------------------------------------------------------------------------------------------------------------- ●HiPerFETTM Power MO SFET With Fast Intrinsic DiodeIXFK180N07IXFN180N07 IXFX180N07 IXFN340N07 IXFK180N10 IXFN180N10 IXFX180N10 IXFN230N10 IXFK44N60 IXFN44N60 IXFR44N60 IXFX44N60 IXFK24N100IXFN24N100 IXFX24N100 IXFN34N100 IXFN36N100 IXFA3N120 IXFP3N120---------------------------------------------------------------------------------------------------------------------- 欢迎您的来电、来函询价我们将竭诚为您服务业务联系电话************传真************业务QQ1051086256 手机158****7980邮箱网址/ 联系人沈阳---------------------------------------------------------------------------------------------------------------------- 专业代理德国艾赛斯IXYS全系列产品库存充足全国价格最低●Q-Class HiPerFET with Fast Intrinsic DiodeIXFH75N10Q IXFH80N10Q IXFT80N10QIXFH58N20Q IXFR58N20Q IXFT58N20Q IXFH80N20Q IXFK80N20Q IXFR80N20Q IXFT80N20Q IXFH40N30Q IXFT40N30Q IXFH52N30Q IXFK52N30Q IXFT52N30Q IXFE73N30Q IXFK73N30Q IXFN73N30Q IXFX73N30Q IXFH26N50Q IXFR26N50Q IXFT26N50Q IXFH28N50Q IXFH32N50Q IXFJ32N50Q IXFK32N50Q IXFR32N50Q IXFT32N50Q IXFX32N50Q IXFE48N50Q IXFK48N50Q IXFN48N50Q IXFR48N50Q IXFX48N50Q IXFH26N60Q IXFK26N60Q IXFR26N60Q IXFT26N60Q IXFH15N80Q IXFR15N80Q IXFT15N80Q IXFH20N80Q IXFK20N80Q IXFT20N80Q IXFK27N80Q IXFN27N80Q IXFX27N80Q IXFH12N90Q IXFM12N90Q IXFT12N90Q IXFH16N90Q IXFK16N90Q IXFT16N90Q IXFA4N100Q IXFH4N100Q IXFP4N100Q IXFR4N100Q IXFT4N100Q IXFH6N100Q IXFT6N100Q IXFH12N100Q IXFR12N100QIXFT12N100Q IXFH15N100Q IXFK15N100Q IXFT15N100Q IXFK21N100QIXFN21N100Q IXFR21N100Q IXFX21N100Q---------------------------------------------------------------------------------------------------------------------- ●Q2-Class HiPerFET with Fast Intrinsic Diode Very High SpeedIXFH40N50Q2 IXFK40N50Q2 IXFR40N50Q2 IXFK66N50Q2 IXFN66N50Q2 IXFR66N50Q2IXFX66N50Q2 IXFB80N50Q2 IXFF80N50Q2 IXFL80N50Q2 IXFN80N50Q2IXFK52N60Q2 IXFX52N60Q2 IXFB70N60Q2 IXFN70N60Q2 IXFK38N80Q2IXFN38N80Q2 IXFR38N80Q2 IXFX38N80Q2 IXFB50N80Q2 IXFN50N80Q2IXFH14N100Q2 IXFR14N100Q2 IXFK30N100Q2 IXFX30N100Q2 IXFB38N100Q2 IXFL38N100Q2 IXFN38N100Q2---------------------------------------------------------------------------------------------------------------------- ●Linear Power MOSFETS High Voltage SOAIXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 IXTH24N50L IXTK46N50L IXTN46N50L IXTX46N50L IXTB62N50LIXTN62N50L IXTH12N100L IXTK22N100L IXTN22N100L IXTX22N100LIXTB30N100L IXTN30N100L IXTK17N120L IXTN17N120L IXTN8N150L---------------------------------------------------------------------------------------------------------------------- ●PolarPTM P-Channel Power MOSFETSIXTA52P10P IXTH52P10PIXTP52P10P IXTQ52P10P IXTH90P10P IXTT90P10P IXTK170P10P IXTN170P10P IXTX170P120P IXTA36P15P IXTP36P15P IXTQ36P15P IXTA26P20P IXTH26P20P IXTP26P20P IXTQ26P20P IXTH48P20P IXTT48P20P IXTK90P20P IXTN90P20P IXTR90P20P IXTX90P20P IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P IXTH20P50P IXTT20P50P IXTK40P50P IXTN40P50P IXTR40P50P IXTX40P50P IXTH16P60P IXTT16P60P IXTK32P60P IXTN32P60P IXTX32P60P---------------------------------------------------------------------------------------------------------------------- ●TrenchPTM P-Channel Power MOSFETsIXTA32P05T IXTP32P05TIXTA28P065T IXTP28P065T IXTA24P085T IXTP24P085T IXTA18P10TIXTP18P10T---------------------------------------------------------------------------------------------------------------------- ●CoolMOSTM Power MOSFETsIXKC20N60C IXKC40N60C IXKR40N60C IXKN40N60C IXKH47N60C IXKN75N60C IXKK85N60C IXKC13N80CIXKC25N80C IXKR25N80C IXKN45N80C IXKP10N60C5 IXKP10N60C5MIXKP13N60C5 IXKP13N60C5M IXKP20N60C5 IXKP20N60C5M IXKH20N60C5 IXKC15N60C5 IXKP24N60C5 IXKP24N60C5M IXKH24N60C5 IXKC19N60C5 IXKH30N60C5 IXKC23N60C5 IXKP35N60C5 IXKH35N60C5 IXKR47N60C5IXKH70N60C5 IXKT70N60C5 IXKF40N60SCD1 FMD15-06KC5 FMD40-06KC FMD47-06KC5 FDM15-06KC5 FDM47-06KC5 LKK47-06C5---------------------------------------------------------------------------------------------------------------------- ●MOSFET ModulesVMO550-01F VMO650-01F VMO1200-01FVMO580-02F VMO1600-02P VMO60-05F VMK165-007T FMK75-01F VMK90-02T2 FMM75-01F VMM650-01F VMM45-02F VMM85-02F VMM300-03F VMM90-09F VHM40-06P1 VKM60-01P1 VKM40-06P1 FMD21-05QC FMD40-06KCFMD15-06KC5 FMD47-06KC5 FDM15-06KC5 FDM47-06KC5 FMM150-0075P VMM1500-0075P FMM75-01F VMM1000-01P FMM65-015P VMM350-0075PVMM200-01P GWM220-004P3-SL GWM220-004P3-SMD GWM220-004X1-SL GWM220-004X1-SMD GWM160-0055X1-SL GWM160-0055X1-SMDGWM120-0075X1-SL GWM120-0075X1-SMD GWM100-0085X1-SMDGWM100-01X1-SL GWM100-01X1-SMD GMM3×160-0055X2-SMDGMM3×120-0075X2-SMD FDM100-0045SP。

IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

场效应管参数

SI-N SI-N SI-P SI-N SI-P P-DARL+D SI-N SI-N SI-N SI-N SI-P SI-P SI-P SI-P SI-P N-DARL P-DARL SI-N N-DARL SI-P N-DARL SI-P SI-N SI-P SI-N SI-P SI-N SI-P SI-P N-FET N-FET SI-N SI-N
SI-N SI-P P-FET N-FET SI-P N-FET SI-N SI-P SI-P GE-P SI-P N-FET SI-P GE-P GE-P SI-N SI-N SI-P N-FET SI-N SI-N N-FET N-FET N-FET N-FET SI-N SI-P N-FET SI-N SI-N SI-P SI-P SI-N
2SA1120 SI-P 2SA1123 SI-P 2SA1124 SI-P 2SA1127 SI-P 2SA1141 SI-P 2SA1142 SI-P 2SA1145 SI-P 2SA1150 SI-P 2SA1156 SI-P 2SA1160 SI-P 2SA1163 SI-P 2SA1170 SI-P 2SA1185 SI-P 2SA1186 SI-P 2SA1200 SI-P 2SA1201 SI-P 2SA1206 SI-P 2SA1207 SI-P 2SA1208 SI-P 2SA1209 SI-P 2SA1210 SI-P 2SA1213 SI-P 2SA1215 SI-P 2SA1216 SI-P 2SA1220A SI-P 2SA1221 SI-P 2SA1225 SI-P 2SA1227A SI-P 2SA1232 SI-P 2SA1241 SI-P 2SA1242 SI-P 2SA1244 SI-P 2SA1249 SI-P

工程师常用mos管封装及图片要点

MOS管简介MOS管的英文全称叫MOSFET(Metal Oxide Semiconductor Field Effect Transistor)，即金属氧化物半导体型场效应管，属于场效应晶体管中的绝缘栅型。

因此，MOS管有时被称为场效应管。

在一般电子电路中，MOS管通常被用于放大电路或开关电路。

而在板卡上的电源稳压电路中，MOSFET扮演的角色主要是判断电位。

MOS管的作用是什么MOS管对于整个供电系统而言起着稳压的作用。

目前板卡上所采用的MOS管并不是太多，一般有10个左右，主要原因是大部分MOS管被整合到IC芯片中去了。

由于MOS 管主要作用是为配件提供稳定的电压，所以它一般使用在CPU、GPU和插槽等附近。

MOS 管一般是以上下两个组成一组的形式出现板卡上。

MOS管封装形式MOSFET芯片在制作完成之后，需要给MOSFET芯片加上一个外壳，即MOS管封装。

MOSFET芯片的外壳具有支撑、保护、冷却的作用，同时还为芯片提供电气连接和隔离，以便MOSFET器件与其它元件构成完整的电路。

按照安装在PCB方式来区分，MOS管封装主要有两大类：插入式（Through Hole）和表面贴装式（Surface Mount）。

插入式就是MOSFET的管脚穿过PCB的安装孔焊接在PCB上。

表面贴裝则是MOSFET的管脚及散热法兰焊接在PCB表面的焊盘上。

常见的插入式封装MOSFET典型的表面贴装式封装MOSFET随着技术的革新与进步，主板和显卡的PCB板采用直插式封装的MOSFET越来越少了，而多改用表面贴装式封装的MOSFET。

故而本文中重点讨论表面贴装式封装MOSFET，并从MOS管外部封装技术、MOS管内部封装改进技术、整合式DrMOS、MOSFET发展趋势和MOSFET实例讲解等进行详细介绍。

MOS管外部封装-标准封装形式概览MOS管外部封装-标准封装形式概览下面我们对标准的封装形式进行如下简要的介绍。

irlr8726场效应管参数

irlr8726场效应管参数
场效应管（Field Effect Transistor，简称FET）是一种三端
元件，常用于放大或开关电路中。

IRLR8726是一种N沟道场效应管，具有以下参数：
1. 饱和漏-源电压（VDS），这是场效应管在完全导通状态下的
漏-源电压。

对于IRLR8726，这个参数通常在数据手册中给出。

2. 饱和漏-源电流（IDS），这是场效应管在饱和状态下的漏-
源电流。

同样，这个参数也会在数据手册中有详细说明。

3. 静态工作点，静态工作点是指场效应管在特定电压和电流条
件下的工作状态，通常由漏-源电流和漏-源电压来描述。

4. 输入电容（Ciss），这是场效应管的输入电容，影响着场效
应管的高频特性和输入阻抗。

5. 输出电容（Coss），这是场效应管的输出电容，影响着场效
应管的高频特性和输出阻抗。

6. 开关时间，开关时间是指场效应管从完全关断到完全导通的时间，通常由上升时间和下降时间来描述。

7. 最大耗散功率（Pd），这是场效应管可以持续耗散的最大功率，超过这个功率会导致场效应管过热损坏。

以上是IRLR8726场效应管的一些基本参数，这些参数对于设计电路和选择合适的场效应管都非常重要。

当然，实际使用时还需要参考数据手册中的具体参数和曲线图来进行综合考虑。

希望这些信息能够帮助到你。

mos管申报要素

mos管申报要素
MOS 管（MOSFET）是一种金属氧化物半导体场效应晶体管，常用于电子电路中作为开关、放大器等元件。

如果你需要申报MOS 管的相关要素，可能是指在进口或出口MOS 管时需要填写的申报信息。

以下是一些可能需要申报的要素：
1. 商品名称：准确描述MOS 管的名称，例如"MOSFET" 或具体型号。

2. 型号：填写MOS 管的具体型号，以确保准确识别和分类。

3. 用途：说明MOS 管的用途，例如在电子设备中作为开关、放大器等。

4. 品牌：如果有品牌信息，填写MOS 管的品牌名称。

5. 制造商：填写MOS 管的制造商或生产厂家的名称。

6. 数量：申报进口或出口的MOS 管数量。

7. 单价：填写MOS 管的单价或价值。

8. 原产国/地区：填写MOS 管的原产国或地区。

mos管场效应管

mos管场效应管
MOS管（金属氧化物半导体场效应管）是一种半导体器件，由金属氧化物半导体（MOS）组成。

它是一种负责电流的控制和放大的三极管。

MOS管具有低功耗、高频率操作、高输入电阻和快速开关特性等优点，因此被广泛用于电子设备中的放大、开关和电源控制等应用。

MOS管根据工作原理的不同，可分为n沟道MOS（NMOS）和p沟道MOS（PMOS）。

NMOS是由n型沟道构成，当在沟道上施加正电压时，会形成导通路径，使电流通过。

PMOS 则是由p型沟道构成，当在沟道上施加负电压时，会形成导通路径。

MOS管的导通和截断状态由栅极与沟道之间的电压控制。

MOS管还有一种常用的类型是CMOS（互补金属氧化物半导体），它由NMOS和PMOS组成，可以有效地减少功耗和提高性能。

CMOS在数字电路和集成电路中得到广泛应用。

总之，MOS管是一种重要的场效应管，具有许多优点，使其被广泛应用于各种电子设备中。

IR新增19款60V StrongIRFET功率MOSFET

寸并降低成本，适用于空间受限的大功率工业
设计。全新６０ＶＳｔｒｏｎｇＩＲＦＥＴ功率ＭＯＳＦＥＴ系列共有ｌ９款器件，均配有可提升低频率应用性能的极低导通电阻、极高的载流能力、软体二极管和有助于提高噪声免疫力的３Ｖ典型阀值电压。该系列的每款器件都完全通过业界最高
开发出焊接电流自动调节、多头自动点焊，同时还能自动检测的点焊机，进一步提高焊接质
量及生产效率。
漆包线的变形量＝（点焊前的线径一点焊
后的线径）／点焊前的线径。点焊后应确保漆包线具有最大的接触面积和截面积，这样即可减少接触电阻，又可保证漆包线的机械强度。变形量通常按１５％～２５％来控制。
系列，采用多种标准和高性能功率封装。全新的ＭＯＳＦＥＴ适用于要求极低导通电阻（ＲＤＳ（ｏｎ））的工业应用，包括电动工具、轻型
电动车（ＬＥＶ）逆变器、直流电机驱动器、锂离子电池组保护和开关模式电源（ＳＭＰＳ）二次侧同步整流应用等。
参考文献：
［１】刘斌．金属焊接技术基础［Ｍ】．北京：国防工业出版社，
２０１２．
［２］吴林，陈善本等．智能化焊接技术［Ｍ】．北京：国防工业

IRF mos管属性

晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型IRFU020 50V 15A 42W * * NMOS场效应IRFPG42 1000V 4A 150W * * NMOS场效应IRFPF40 900V 4.7A 150W * * NMOS场效应IRFP9240 200V 12A 150W * * PMOS场效应IRFP9140 100V 19A 150W * * PMOS场效应IRFP460 500V 20A 250W * * NMOS场效应IRFP450 500V 14A 180W * * NMOS场效应IRFP440 500V 8A 150W * * NMOS场效应IRFP353 350V 14A 180W * * NMOS场效应IRFP350 400V 16A 180W * * NMOS场效应IRFP340 400V 10A 150W * * NMOS场效应IRFP250 200V 33A 180W * * NMOS场效应IRFP240 200V 19A 150W * * NMOS场效应IRFP150 100V 40A 180W * * NMOS场效应IRFP140 100V 30A 150W * * NMOS场效应IRFP054 60V 65A 180W * * NMOS场效应IRFI744 400V 4A 32W * * NMOS场效应IRFI730 400V 4A 32W * * NMOS场效应IRFD9120 100V 1A 1W * * NMOS场效应IRFD123 80V 1.1A 1W * * NMOS场效应IRFD120 100V 1.3A 1W * * NMOS场效应IRFD113 60V 0.8A 1W * * NMOS场效应IRFBE30 800V 2.8A 75W * * NMOS场效应IRFBC40 600V 6.2A 125W * * NMOS场效应IRFBC30 600V 3.6A 74W * * NMOS场效应IRFBC20 600V 2.5A 50W * * NMOS场效应IRFS9630 200V 6.5A 75W * * PMOS场效应IRF9630 200V 6.5A 75W * * PMOS场效应IRF9610 200V 1A 20W * * PMOS场效应IRF9541 60V 19A 125W * * PMOS场效应IRF9531 60V 12A 75W * * PMOS场效应IRF9530 100V 12A 75W * * PMOS场效应IRF840 500V 8A 125W * * NMOS场效应IRF830 500V 4.5A 75W * * NMOS场效应IRF740 400V 10A 125W * * NMOS场效应IRF730 400V 5.5A 75W * * NMOS场效应IRF720 400V 3.3A 50W * * NMOS场效应IRF640 200V 18A 125W * * NMOS场效应IRF630 200V 9A 75W * * NMOS场效应IRF610 200V 3.3A 43W * * NMOS场效应IRF541 80V 28A 150W * * NMOS场效应IRF540 100V 28A 150W * * NMOS场效应IRF530 100V 14A 79W * * NMOS场效应IRF440 500V 8A 125W * * NMOS场效应IRF230 200V 9A 79W * * NMOS场效应IRF130 100V 14A 79W * * NMOS场效应BUZ20 100V 12A 75W * * NMOS场效应BUZ11A 50V 25A 75W * * NMOS场效应BS170 60V 0.3A 0.63W * * NMOS场效应常用场效应管及晶体管参数(2)晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC4582 600V 15A 75W * * NPN2SC4517 550V 3A 30W * * NPN2SC4429 1100V 8A 60W * * NPN2SC4297 500V 12A 75W * * NPN2SC4288 1400V 12A 200W * * NPN2SC4242 450V 7A 40W * * NPN2SC4231 800V 2A 30W * * NPN2SC4119 1500V 15A 250W * * NPN2SC4111 1500V 10A 250W * * NPN2SC4106 500V 7A 50W * 20MHZ NPN2SC4059 600V 15A 130W * * NPN2SC4038 50V 0.1A 0.3W * 180MHZ NPN2SC4024 100V 10A 35W * * NPN2SC3998 1500V 25A 250W * * NPN2SC3997 1500V 15A 250W * * NPN2SC3987 50V 3A 20W 1000 * NPN(达林顿)2SC3953 120V 0.2A 1.3W * 400MHZ NPN2SC3907 180V 12A 130W * 30MHZ NPN2SC3893 1400V 8A 50W * 8MHZ NPN2SC3886 1400V 8A 50W * 8MHZ NPN2SC3873 500V 12A 75W * 30MHZ NPN2SC3866 900V 3A 40W * * NPN2SC3858 200V 17A 200W * 20MHZ NPN2SC3807 30V 2A 1.2W * 260MHZ NPN2SC3783 900V 5A 100W * * NPN2SC3720 1200V 10A 200W * * NPN2SC3680 900V 7A 120W * * NPN2SC3679 900V 5A 100W * * NPN2SC3595 30V 0.5A 1.2W 90 * NPN2SC3527 500V 15A 100W 13 * NPN2SC3505 900V 6A 80W 12 * NPN2SC3460 1100V 6A 100W 12 * NPN2SC3457 1100V 3A 50W 12 * NPN2SC3358 20V 0.15A * * 7000MHZ NPN2SC3355 20V 0.15A * * 6500MHZ NPN2SC3320 500V 15A 80W * * NPN2SC3310 500V 5A 40W 20 * NPN2SC3300 100V 15A 100W * * NPN2SC1855 20V 0.02A 0.25W * 550MHZ NPN2SC1507 300V 0.2A 15W * * NPN常用场效应管及晶体管参数(3)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC1494 36V 6A 40W * 175MHZ NPN2SC1222 60V 0.1A 0.25W * 100MHZ NPN2SC1162 35V 1.5A 10W * * NPN2SC1008 80V 0.7A 0.8W * 50MHZ NPN2SC900 30V 0.03A 0.25W * 100MHZ NPN2SC828 45V 0.05A 0.25W * * NPN2SC815 60V 0.2A 0.25W * * NPN2SC380 35V 0.03A 0.25W * * NPN2SC106 60V 1.5A 15W * * NPN2SB1494 120V 25A 120W * * PNP(达林顿）2SB1429 180V 15A 150W * * PNP2SB1400 120V 6A 25W 1000-20000 * PNP(达林顿）2SB1375 60V 3A 2W * * PNP2SB1335 80V 4A 30W * * PNP2SB1317 180V 15A 150W * * PNP2SB1316 100V 2A 10W 15000 * PNP(达林顿）2SB1243 40V 3A 1W * 70MHZ PNP2SB1240 40V 2A 1W * 100MHZ PNP2SB1238 80V 0.7A 1W * 100MHZ PNP2SB1185 60V 3A 25W * 75MHZ PNP2SB1079 100V 20A 100W 5000 * PNP(达林顿）2SB1020 100V 7A 40W 6000 * PNP(达林顿）2SB834 60V 3A 30W * * PNP2SB817 160V 12A 100W * * PNP2SB772 40V 3A 10W * * PNP2SB744 70V 3A 10W * * PNP2SB734 60V 1A 1W * * PNP2SB688 120V 8A 80W * * PNP2SB675 60V 7A 40W * * PNP(达林顿）2SB669 70V 4A 40W * * PNP(达林顿）2SB649 180V 1.5A 1W * * PNP2SB647 120V 1A 0.9W * 140MHZ PNP2SB449 50V 3.5A 22W * * PNP2SA1943 230V 15A 150W * * PNP2SA1785 400V 1A 1W * 140MHZ PNP2SA1668 200V 2A 25W * 20MHZ PNP2SA1516 180V 12A 130W * 25MHZ PNP2SA1494 200V 17A 200W * 20MHZ PNP2SA1444 100V 1.5A 2W * 80MHZ PNP2SA1358 120V 1A 10W * 120MHZ PNP2SA1302 200V 15A 150W * * PNP2SA1301 200V 10A 100W * * PNP2SA1295 230V 17A 200W * * PNP2SA1265 140V 10A 30W * * PNP2SA1216 180V 17A 200W * * PNP--------------------------------------------------------------------------------常用场效应管及晶体管参数(4)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SA1162 50V 0.15A 0.15W * * PNP2SA1123 150V 0.05A 0.75W * * PNP2SA1020 50V 2A 0.9W * * PNP2SA1009 350V 2A 15W * * PNP2N6678 650V 15A 175W * * NPN2N5685 60V 50A 300W * * NPN2N6277 180V 50A 300W * * NPN2N5551 160V 0.6A 0.6W * 100MHZ NPN2N5401 160V 0.6A 0.6W * 100MHZ PNP2N3773 160V 16A 150W * * NPN2N3440 450V 1A 1W * * NPN2N3055 100V 15A 115W * * NPN2N2907 60V 0.6A 0.4W 200 * NPN2N2369 40V 0.5A 0.3W * 800MHZ NPN2N2222 60V 0.8A 0.5W 45 * NPN9018 30V 0.05A 0.4W * 1G NPN9015 50V 0.1A 0.4W * 150MHZ PNP9014 50V 0.1A 0.4W * 150MHZ NPN9013 50V 0.5A 0.6W * * NPN9012 50V 0.5A 0.6W * * PNP9011 50V 0.03A 0.4W * 150MHZ NPNTIP147 100V 10A 125W * * PNPTIP142 100V 10A 125W * * NPNTIP127 100V 8A 65W * * PNPTIP122 100V 8A 65W * * NPNTIP102 100V 8A 2W * * NPNTIP42C 100V 6A 65W * * PNPTIP41C 100V 6A 65W * * NPNTIP36C 100V 25A 125W * * PNPTIP35C 100V 25A 125W * * NPNTIP32C 100V 3A 40W * * PNPTIP31C 100V 3A 40W * * NPNMJE13007 1500V 2.5A 60W * * NPNMJE13005 400V 4A 60W * * NPNMJE13003 400V 1.5A 14W * * NPNMJE2955T 60V 10A 75W * * NPNMJE350 300V 0.5A 20W * * NPNMJE340 300V 0.5A 20W * * NPNMJ15025 400V 16A 250W * * PNPMJ15024 400V 16A 250W * * NPNMJ13333 400V 20A 175W * * NPNMJ11033 120V 50A 300W * * NPNMJ11032 120V 50A 300W * * NPNMJ10025 850V 20A 250W * * NPNMJ10016 500V 50A 200W * * NPN-------------------------------------------------------------------------------- 常用场效应管及晶体管参数(5)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型BUS13A 1000V 15A 175W * * NPNBUH515 1500V 10A 80W * * NPNBU2532 1500V 15A 150W * * NPNBU2527 1500V 15A 150W * * NPNBU2525 1500V 12A 150W * * NPNBU2522 1500V 11A 150W * * NPNBU2520 800V 10A 150W * * NPNBU2508 700V 8A 125W * * NPNBU2506 1500V 7A 50W * * NPNBU932R 500V 15A 150W * * NPNBU806 400V 8A 60W * * NPNBU406 400V 7A 60W * * NPNBU323 450V 10A 125W * * NPN(达林顿)BF458 250V 0.1A 10W * * NPNBD682 100V 4A 40W * * PNPMJ10015 400V 50A 200W * * NPNMJ10012 400V 10A 175W * * NPN(达林顿)MJ4502 90V 30A 200W * * PNPMJ3055 60V 15A 115W * * NPNMJ2955 60V 15A 115W * * PNPMN650 1500V 6A 80W * * NPNBUX98A 400V 30A 210W * * NPNBUX84 800V 2A 40W * * NPNBUW13A 1000V 15A 150W * * NPNBUV48A 450V 15A 150W * * NPNBUV28A 225V 10A 65W * * NPNBUV26 90V 14A 65W * * NPNBUT12A 450V 10A 125W * * NPNBUT11A 1000V 5A 100W * * NPNBUS14A 1000V 30A 250W * * NPNBD681 100V 4A 40W * * NPNBD244 45V 6A 65W * * PNPBD243 45V 6A 65W * * NPNBD238 100V 2A 25W * * PNPBD237 100V 2A 25W * * NPNBD138 60V 1.5A 12.5W * * PNPBD137 60V 1.5A 12.5W * * NPNBD136 45V 1.5A 12.5W * * PNPBD135 45V 1.5A 12.5W * * NPNBC547 50V 0.2A 0.5W * 300MHZ NPNBC546 80V 0.2A 0.5W * * NPNBC338 50V 0.8A 0.6W * * NPNBC337 50V 0.8A 0.6W * * NPNBC327 50V 0.8 0.6W * * PNPBC307 50V 0.2AA 0.3W * * PNP--------------------------------------------------------------------------------常用场效应管及晶体管参数(6)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SDK55 400V 4A 60W * * NPN2SD2445 1500V 12.5A 120W * * NPN2SD2388 90V 3A 1.2W * * NPN(达林顿)2SD2335 1500V 7A 100W * * NPN2SD2334 1500V 5A 80W * * NPN2SD2156 120V 25A 125W 2000-20000 * NPN(达林顿)2SD2155 180V 15A 150W * * NPN2SD2036 60V 1A 1.2W * * NPN2SD2012 60V 3A 2W * * NPN2SD2008 80V 1A 1.5W * * NPN2SD1997 40V 3A 1.5W * 100MHZ NPN2SD1994 60V 1A 1W * * NPN2SD1993 50V 0.1A 0.4W * * NPN2SD1980 100V 2A 10W 1000-10000 * NPN(达林顿)2SD1978 120V 1.5A 1W 30000 * NPN(达林顿)2SD1975 180V 15A 150W * * NPN2SD1930 100V 2A 1.2W 1000 * NPN(达林顿)2SD1847 50V 1A 1W * * NPN(低噪)2SD1762 60V 3A 25W * 90MHZ NPN2SD1718 180V 15A 3.2W * 20MHZ NPN2SD1640 120V 2A 1.2W 4000-40000 * NPN(达林顿)2SD1590 150V 8A 25W 15000 * NPN(达林顿)2SD1559 100V 20A 20W 5000 * NPN(达林顿)2SD1415 80V 7A 40W 6000 * NPN(达林顿)2SD1416 80V 7A 40W 6000 * NPN(达林顿)2SD1302 25V 0.5A 0.5W * 200MHZ NPN2SD1273 80V 3A 40W * 50MHZ NPN2SD1163A 350V 7A 40W * 60MHZ NPN2SD1047 160V 12A 100W * * NPN2SD1037 150V 30A 180W * * NPN2SD1025 200V 8A 50W * * NPN(达林顿)2SD789 100V 1A 0.9W * * NPN2SD774 100V 1A 1W * * NPN2SD669 180V 1.5A 1W * 140MHZ NPN2SD667 120V 1A 0.9W * 140MHZ NPN( 达林顿)2SD560 150V 5A 30W * * NPN( 达林顿)2SD547 600V 50A 400W * * NPN2SD438 500V 1A 0.75W * 100MHZ NPN2SD415 120V 0.8A 5W * * NPN2SD385 100V 7A 30W * * NPN( 达林顿)2SD325 50V 3A 25W * * NPN2SD40C 40V 0.5A 40W * * NPN( 达林顿)2SC5252 1500V 15A 100W * * NPN2SC5251 1500V 12A 50W * * NPN2SC5250 1000V 7A 100W * * NPN--------------------------------------------------------------------------------常用场效应管及晶体管参数(7)--------------------------------------------------------------------------------晶体管型号反压Vbe0 电流Icm 功率Pcm 放大系数特征频率管子类型2SC5244 1500V 15A 200W * * NPN2SC5243 1500V 15A 200W * * NPN2SC5207 1500V 10A 50W * * NPN2sc5200 230V 15A 150W * * NPN2sc5132 1500V 16A 50W * * NPN2sc5088 1500V 10A 50W * * NPN2sc5086 1500V 10A 50W * * NPN2sc5068 1500V 10A 50W * * NPN2sc5020 1000V 7A 100W * * NPN2sc4953 500V 2A 25W * * NPN2sc4941 1500V 6A 65W * * NPN2sc4927 1500V 8A 50W * * NPN2sc4924 800V 10A 70W * * NPN2sc4913 2000V 0.2A 35W * * NPN2sc4769 1500V 7A 60W * * NPN( 带阻尼)2sc4747 1500V 10A 50W * * NPN2sc4745 1500V 6A 50W * * NPN2sc4742 1500V 6A 50W * * NPN( 带阻尼) 2sc4706 900V 14A 130W * 6MH NPN2SD1887 1500V 10A 70W * * NPN2SD1886 1500V 8A 70W * * NPN2SD1885 1500V 6A 60W * * NPN2SD1884 1500V 5A 60W * * NPN2SD1883 1500V 4A 50W * * NPN2SD1882 1500V 3A 50W * * NPN2SD1881 1500V 10A 70W * * NPN2SD1880 1500V 8A 70W * * NPN2SD1879 1500V 6A 60W * * NPN2SD1878 1500V 5A 60W * * NPN2SD1876 1500V 3A 50W * * NPN2SD1739 1500V 6A 100W * * NPN2SD1738 1500V 5A 100W * * <td alig够用吗？。

IR场效应管MOS管,创立翔

IR场效应管MOS管广泛应用如下:1、HID,氙气灯,安定器等汽车照明用MOSFET,IC:IRFZ44N,IR,49A,55V,MOSFETIRF3205,IR,110A,55V,MOSFETIRF540N,IR,33A,100V,MOSFETIRF840,IR,8A,500V,MOSFETIRF740,IR,10A,400V,MOSFETHFA08TB60,IR,8A,600V,快恢复管MUR860,ON,8A,600V,快恢复管8ETH06,IR,8A,600V,快恢复管IR2103,IR,驱动IC2、UPS用IC,MOSFET:IRFP264,IR,38A,250V,MOSFETIRF3710,IR,57A,100V,MOSFETIRG4PH40UD,IR,21A,1200V,IGBTIRG4PC40W,IR,20A,600V,IGBTIRFZ44N,IR,49A,55V,MOSFETIRF3205,IR,110A,55V,MOSFETIRG4PF50WD,28A,900V,IGBTIRF1010E,IR,84A,60V,MOSFETUC3845N,ON,PWM控制器UC3854N,TI,PFC控制器UC3843AN,ON,PWM控制器RHRP860,仙童,8A,600V,FRED RHRP15120,仙童,15A,1200V,FRED RHRP30120,仙童,30A,1200V,FRED RHRG30120,仙童,30A,1200V,FRED 3、电动车控制器用MOSFET:STP75NF75,ST,80A,75V,MOSFETIRF1010E,IR,84A,60V,MOSFETIRF2807,IR,82A,75V,MOSFETIRFZ44N,IR,49A,55V,MOSFETIRF2907,IR,75A,75V,MOSFETFSM75N75,Foslink,75A,75V,MOSFET4、电动工具控制器用MOSFET:STP60NF06,ST,60A,60V,MOSFETSTP75NF75,ST,80A,75V,MOSFETIRFZ44N,IR,49A,55V,MOSFET5、电子镇流器,节能灯等产品用调光,控制,驱动IC,MOSFET: IRF830,IR,4.5A,500V,MOSFETIRF840,IR,8A,500V,MOSFETIRF740,IR,10A,400V,MOSFETIRF1010E,IR,81A,60V,MOSFETIRFP450,IR,14A,500V,MOSFETIRFP460,IR,20A,500V,MOSFETIRFP22N50A,IR,22A,500V,MOSFETIRFPS37N50A,IR,37A,500V,MOSFETIR2156,IR,镇流器控制ICIR2520D,IR,镇流器控制ICIR2166,IR,镇流器控制ICIR2153,IR,镇流器控制ICIR21592,IR,可调光镇流器控制IC 6、开关电源用MOSFET,IC:IRF840,IR,8A,500V,MOSFETIRF740,IR,10A,400V,MOSFET IRFP450,IR,14A,500V,MOSFET IRFP460,IR,20A,500V,MOSFET IRFP22N50A,IR,22A,500V,MOSFET IRFPS37N50A,IR,36A,500V,MOSFET IRF830,IR,4.5A,500V,MOSFET MBR20100CT,ON,20A,100V肖特基30CPQ100,IR,30A,100V,肖特基40CPQ100,IR,40A,100V,肖特基UC3825AN,TI,PWM控制器UC3875N,TI,PWM控制器7、逆变器用MOSFET:IRFZ44N,IR,49A,55V,MOSFETIRF3205,IR,110A,55V,MOSFETIRF2807,IR,82A,75V,MOSFETIRF1404,IR,162A,40V,MOSFETIRFP450,IR,14A,500V,MOSFETIRFP460,IR,20A,500V,MOSFET8、音响,汽车功放,舞台设备用MOSFET: IRFZ44N,IR,49A,55V,MOSFETIRF3205,IR,110A,55V,MOSFETIR2011,IR,1A驱动器FQP50N06,仙童,50A,60V,MOSFETIRF640N,IR,18A,200V,MOSFETIRF9640,IR,-11A,-200VIRF530,IR,14A,100V,MOSFETIRF1010E,IR,84A,60V,MOSFETIRFP250N,IR,30A,200V,MOSFETIRF9530N,IR,-14A,-100V,MOSFET IRLML6302,IR,-0.62A,-20V,MOSFET9、太阳能控制器用MOSFET:STP75NF75,ST,80A,75V,MOSFETSTP60NF06,ST,60A,60V,MOSFETIRFZ44N,IR,49A,55V,MOSFETIRF1010E,IR,84A,60V,MOSFET10、电焊机用MOSFET:IRFP460,IR,20A,500V,MOSFETIRFP260N,IR,49A,200V,MOSFETIRF9Z34N,IR,-17A,-55V,MOSFETIRFZ34N,IR,26A,55V,MOSFET11、超声波清洗机用MOSFETIRFP460LC,IR,20A,500V,MOSFETIRFP460,IR,20A,500V,MOSFETIRFP450,IR,14A,500V,MOSFET12、其它应用领域:家用电器、电脑、仪器仪表、通信网络设备、航空、卫星等各行各业。

mos管分离元件自举电容驱动电路

mos管分离元件自举电容驱动电路
MOS管分离元件自举电容驱动电路是一种常见的电路拓扑结构，用于驱动功率MOSFET或IGBT等高压开关器件。

该电路通过自举电容技术，利用周期性切换产生的高频脉冲来提供所需的驱动电压。

在这种电路中，主要包含两个关键部分：分离元件和自举电容。

分离元件是指将驱动电源与高压开关器件的电源隔离开来，主要由分离变压器和整流器组成。

分离变压器将低压信号转换为高压信号，并通过整流器将交流信号转换为直流信号，从而为高压开关器件提供所需的驱动电源。

自举电容是一种特殊的电容器，其具有存储电荷的能力。

在驱动过程中，自举电容首先被充电，然后通过开关电路周期性地自举充放电。

当自举电容放电时，产生的负压脉冲将作为驱动电源，提供给高压开关器件的栅极或控制端，以实现开关操作。

通过使用MOS管分离元件自举电容驱动电路，可以实现高效、可靠的驱动高压开关器件的目的。

它在一些需要高电压和快速开关的应用中被广泛采用，如功率电子变换器、逆变器、交流驱动器等领域。

MOSFET品牌大集结

MOSFET品牌大集结关键字：这里有您所知道或不知道,正在使用或将会使用到的MOSFET品牌,一起来看看吧:IR (International Rectifier国际公司)--老牌劲旅，贵且缺着，但还是要用ST (ST Microelectronics意法公司)--性价比不错的老牌子FSC(FAIRCHILDxx半导体大家习惯叫“仙童”)--MOS逐渐谈去，期待IGBTInfineon(Infineonxx半导体)--COOL MOS痛并快乐着，贵有贵的道理。

ON(Onsemixx半导体)--痛。

还是痛ROHM(ROHMxx半导体)--你用得多吗？TOSHIBA(TOSHIBA东芝半导体)--日系厂商的首选，型号有点乱NXP(NXPxx半导体)--推广的不咋地AOS(Alpha & Omega Semiconductorxx万代半导体)--低压小电流的首选Microsemi(Microsemixx森美半导体)--了解不多Magnachip(Magnachip美格xx半导体)--后起之秀,目标是FSC,呵呵Maplesemi(Maplesemixx半导体)--xx圆提供商,起步太慢了Renesas(Renesasxx电子)--NEC的2SC,用的人还蛮多AUK(AUKxx光电子公司)--无晶圆无封装的FSCUTC(UTCxx友顺)--大小要通吃APEC(APECxxxx先进)--低压为主ANPEC(ANPECxx茂达)--低压为主WISDOM(WISDOMxx威士顿)--无晶圆Semihow(Semihowxx)--无晶圆Truesemi(Truesemixx信安)--无晶圆CET(CET台湾华瑞股份公司)--台系中的精品SINO-microelectronics(SINO-microelectronicsxxxx)--7A以下性价比不错HUAJING(HUAJINGxx华润xx微电子)--7A以下性价比不错SL(Silanxxxx微电子)--7A以下性价比不错SAMWIN(SAMWINxx南方芯源)--没有太多映像Dongguang(xx东光微电子)--有人在用Ruichips(Ruichipsxx骏半导体)--低压大电流,IR的** SANKEN(SANKENxx三肯半导体)--不熟IXYS(IXYSxxxx赛斯)--走自己的路,让别人去说BYD(BYDxx)--没有他的汽车卖的好VISHAY(Vishay威世半导体)--呵呵,上了IR的当。

MOS_场效应管的工作原理及特点

MOS 场效应管的工作原理及特点场效应管是只有一种载流子参与导电，用输入电压控制输出电流的半导体器件。

有N沟道器件和P 沟道器件。

有结型场效应三极管JFET(Junction Field Effect Transister)和绝缘栅型场效应三极管IGFET( Insulated Gate Field Effect Transister) 之分。

IGFET也称金属-氧化物-半导体三极管MOSFET（Metal Oxide SemIConductor FET）。

MOS场效应管有增强型（Enhancement MOS 或EMOS）和耗尽型(Depletion)MOS或DMOS）两大类，每一类有N沟道和P沟道两种导电类型。

场效应管有三个电极：D(Drain) 称为漏极，相当双极型三极管的集电极；G(Gate) 称为栅极，相当于双极型三极管的基极；S(Source) 称为源极，相当于双极型三极管的发射极。

增强型MOS(EMOS)场效应管道增强型MOSFET基本上是一种左右对称的拓扑结构，它是在P型半导体上生成一层SiO2 薄膜绝缘层，然后用光刻工艺扩散两个高掺杂的N型区，从N型区引出电极，一个是漏极D，一个是源极S。

在源极和漏极之间的绝缘层上镀一层金属铝作为栅极G。

P型半导体称为衬底(substrat)，用符号B表示。

一、工作原理1．沟道形成原理当Vgs=0 V时，漏源之间相当两个背靠背的二极管，在D、S之间加上电压，不会在D、S间形成电流。

当栅极加有电压时，若0＜Vgs＜Vgs(th)时（VGS(th) 称为开启电压），通过栅极和衬底间的电容作用，将靠近栅极下方的P型半导体中的空穴向下方排斥，出现了一薄层负离子的耗尽层。

耗尽层中的少子将向表层运动，但数量有限，不足以形成沟道，所以仍然不足以形成漏极电流ID。

进一步增加Vgs，当Vgs＞Vgs(th)时，由于此时的栅极电压已经比较强，在靠近栅极下方的P型半导体表层中聚集较多的电子，可以形成沟道，将漏极和源极沟通。

mos管8726参数

mos管8726参数
MOS管8726是一种金属氧化物半导体场效应管（MOSFET），常用于功率放大、开关和调节电路中。

以下是关于MOS管8726的一些参数的解释：
1. 器件类型，MOS管8726是一种N沟道增强型MOSFET，具有负电压栅极和正电压源极。

2. 最大漏极电流（ID），这是MOS管8726能够承受的最大漏极电流。

超过此电流可能导致器件损坏。

3. 最大漏极-源极电压（VDS），这是MOS管8726能够承受的最大漏极-源极电压。

超过此电压可能导致器件损坏。

4. 最大栅极-源极电压（VGS），这是MOS管8726能够承受的最大栅极-源极电压。

超过此电压可能导致器件损坏。

5. 阻态漏极电阻（RDS(on)），这是MOS管8726在导通状态下的漏极-源极电阻。

较低的RDS(on)值意味着较小的导通电阻，从而减少功耗和发热。

6. 栅极电荷（Qg），这是MOS管8726栅极电荷的总量。

较小的Qg值意味着更快的开关速度和更低的开关损耗。

7. 栅极阈值电压（Vth），这是MOS管8726的栅极电压与漏极电流之间的临界电压。

当栅极电压高于此值时，MOS管开始导通。

8. 漏极电流温度系数（ID Temperature Coefficient），这是MOS管8726漏极电流随温度变化的比例。

了解此系数可以帮助设计者在不同温度下预测器件的性能。

需要注意的是，以上只是MOS管8726的一些常见参数，具体的参数取决于制造商和型号。

如果你需要更具体的参数，请提供更详细的型号或参考相关的器件手册。

电动车控制器 mos场效应管

电动车控制器 mos场效应管
电动车控制器中的MOS场效应管是一种关键的电子元件，它在
电动车的驱动系统中起着重要的作用。

MOS场效应管是一种主要用
于功率开关的半导体器件，它能够在电路中实现电压和电流的控制。

在电动车控制器中，MOS场效应管通常被用来控制电机的启停、转
速调节和动力输出等功能。

首先，让我们来看MOS场效应管在电动车控制器中的作用。

MOS
场效应管可以作为电动车控制器的开关元件，通过控制其导通和截
止状态来实现对电机的精确控制。

通过调节MOS场效应管的导通和
截止时间，可以实现对电机的启动、制动和调速，从而实现电动车
的驱动控制。

其次，MOS场效应管在电动车控制器中还承担着功率调节和保
护的功能。

由于MOS场效应管具有低开关损耗和高工作频率的特点，因此可以有效地实现对电动车驱动系统的功率调节，提高能量利用率。

同时，MOS场效应管还能够通过电流和温度保护功能，对电动
车控制器和电机进行保护，确保系统的安全稳定运行。

此外，MOS场效应管的选型和匹配也是电动车控制器设计中需
要考虑的重要因素。

合理选择和匹配MOS场效应管，可以提高电动车控制器的效率和可靠性，降低系统的能耗和故障率，从而提升电动车的性能和使用寿命。

总的来说，MOS场效应管在电动车控制器中扮演着至关重要的角色，通过其精确的控制和高效的功率调节能力，实现了电动车驱动系统的高性能和稳定可靠运行。

在未来的电动车发展中，MOS场效应管的技术和应用将继续得到进一步的优化和提升，为电动车的智能化和节能环保提供更加可靠的支持。

mos管申报要素 -回复

mos管申报要素-回复"mos 管申报要素"是指在申报和使用MOS管时需要注意的一些关键要素。

MOS管是一种金属氧化物半导体场效应管，广泛应用于电子设备和电路中。

在申报MOS管时，以下要素需要特别关注：半导体材料、器件特性、晶体管工艺、特殊要求和测试方法等。

首先，半导体材料是MOS管至关重要的组成部分。

常见的半导体材料包括硅、镓化合物和碳化硅等。

其中，硅是应用最广泛的材料，具有良好的电特性和可靠性。

镓化合物材料具有高频特性和高功率特性，常用于射频电子设备中。

碳化硅则是一种新型的半导体材料，具有高温性能和高功率特性。

其次，MOS管的器件特性对于申报和应用至关重要。

主要包括导通电阻、漏电流、击穿电压和开关速度等。

导通电阻是指MOS管在导通状态下的电阻，决定了其在电路中的能耗。

漏电流则是指MOS管在关闭状态下的漏电流大小，对功耗和稳定性有直接影响。

击穿电压是指在电压超过一定阈值时，MOS管会发生气隙击穿导致无法正常工作。

开关速度则是指MOS管的开关速度，在高频应用中非常关键。

进一步，晶体管工艺对于MOS管的性能和可靠性也至关重要。

主要工艺包括沉积薄膜，光刻，干法刻蚀和离子注入等。

沉积薄膜是指在晶片表面沉积金属氧化物，形成氧化层的过程。

光刻是将光掩膜投射到晶片表面的过程，用于制作场效应结构。

干法刻蚀则是利用化学和物理反应将晶片表面的材料腐蚀去除的过程。

离子注入是将杂质离子注入到晶片表面形成不同掺杂层的过程。

另外，特殊要求是指在某些特定应用中对MOS管性能的要求。

例如，高电压应用中对击穿电压和绝缘能力的要求较高。

高频应用中对开关速度和损耗的要求较高。

温度特性则是指MOS管在高温或低温下性能的稳定性和可靠性。

此外，还有一些特殊环境下的需求，如抗辐射能力、耐腐蚀性等。

最后，测试方法是评估和验证MOS管性能的关键步骤。

常见的测试方法包括导通电阻测试、漏电流测试、击穿电压测试和开关速度测试等。

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