BAT54W开关二极管规格书

TC德昌takcheong选型 ESD二极管,开关二极管,肖特基二极管,触发二极管,数字三极管,场效应管MOS,双极型三极管

TC德昌takcheongESD二极管产品选型Ptot C Max VBR VRWM Max IR Max Max IPP PPK Max Package (W)(pF)(V)(V)(μA)(A)(W)OutlineESD5Z5V0C0.15Typ. 15 5.6~7.851448SOD-523ESD5Z12V0.15Typ. 55>13.5121595SOD-523ESD5Z3V30.15Typ. 80>5.03.3111.2158SOD-523ESD5Z5V00.15Typ. 80>6.2519.4174SOD-523ESD8D3V3CA0.1516>5 3.30.16SOD-882ESD5Z7V00.15Typ. 65>7.5718.8200SOD-523ESD5Z36V0.15Typ. 20>403615120SOD-523ESD8D5V0C0.15Typ. 15>5.6515SOD-882ESD8LM5V0C0.15Typ. 3.5>5.651 3.5SOD-882ESD8L5V0C0.150.9>5.4511SOD-882ESD11D5V0C0.15Typ. 15>5.650.5 5.5DFN0603ESD11LL5V00.15Typ. 0.75>6.050.54DFN0603ESD8LL5V00.150.65>5.4514SOD-882开关二极管产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package(W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineBAV21W0.425010011000.120050SOD-123BAV19W0.412010011000.110050SOD-123BAV20W0.420010011000.115050SOD-1231N914BW0.41001000.7255754SOD-1231N4448W0.41001000.7255754SOD-1231N4148WS0.21001001105754SOD-3231N4148W0.41001001105754SOD-1231N4448WS0.21001000.7255754SOD-3231N914BWS0.21001000.7255754SOD-323 BAV21WSG0.225010011000.120050SOD-323G BAV21WG0.425010011000.120050SOD-123G BAV20WS0.220010011000.115050SOD-3231N914BS0.41001000.7255754DO-35BAV20WSG0.220010011000.115050SOD-323G BAV20WG0.420010011000.115050SOD-123G BAV21WS0.225010011000.120050SOD-3231N4448S0.41001000.7255754DO-35BAV19WSG0.212010011000.110050SOD-323G BAV19WG0.412010011000.110050SOD-123G1SS3550.2801001.21000.1804SOD-323产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)Outline1N4148S0.41001001105754DO-351N4448WSG0.21001000.7255754SOD-323G 1N4448WG0.41001000.7255754SOD-123G CDSQR41481251001001105754SOD-8821N4148WSG0.21001001105754SOD-323G1N4148WG0.41001001105754SOD-123G1SS400BS150- - 1.21000.1804SOD-882KEL 1N914BWT0.21001000.7255754SOD-523 KEL 1N4448WT0.21001000.7255754SOD-523 KEL 1N4148WT0.21001001105754SOD-523 KEL BAV21WS0.225010011000.120050SOD-323 KEL BAV20WS0.220010011000.115050SOD-323 KEL BAV19WS0.212010011000.110050SOD-323 KEL 1N914BWS0.21001000.7255754SOD-323 KEL 1N4448WS0.21001000.7255754SOD-323 KEL 1N4148WS0.21001001105754SOD-323 KEL BAV21W0.425010011000.120050SOD-123 KEL BAV20W0.420010011000.115050SOD-123KEL BAV19W0.412010011000.110050SOD-123产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineKEL 1N914BW0.41001000.7255754SOD-123 KEL 1N4448W0.41001000.7255754SOD-123 KEL 1N4148W0.41001001105754SOD-123 TCBAV210.525010011000.120050DO-35TCBAV200.520010011000.115050DO-35TC1SS133M0.3800.5 1.21000.5804DO-341SS4220.20.5 1.21500.1854SOD-523 TCBAS160.2751000.71511754SOD-523 TC1SS4000.21001001.21000.1804SOD-523BAV99T0.158500.71510.03254SOT-523 BAV70T0.158500.71510.03254SOT-523 BAW56T0.158500.71510.03254SOT-523TC1N914BWT0.21001000.7255754SOD-523 TC1N4448WT0.21001000.7255754SOD-523 TC1N4148WT0.21001001105754SOD-523 TCLL914B0.51001000.7255754LL-34TCBAV1030.525010011000.120050LL-34 TCBAV1020.520010011000.115050LL-34TCBAV1010.512010011000.110050LL-34产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineTCBAV1000.56010011000.15050LL-34 TCLL41510.57551500.05504LL-34TCLL44480.51001000.7255754LL-34TCLL41480.51001001105754LL-34TCBAW760.575511000.1504DO-35TC1N914B0.51001000.7255754DO-35TC1N44480.51001000.7255754DO-35TC1N41480.51001001105754DO-35TC1SS244M0.32501001.520010022050DO-34TC1N914BM0.31001000.7255754DO-34TC1N4448M0.31001000.7255754DO-34TC1N4148M0.31001001105754DO-34肖特基二极管产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineRB501V-40G0.24010.551003010SOD-323GB5819WSG0.254090.6100010004030SOD-323GBAT54WSG0.23040.81002255SOD-323GSD103CWG0.42020.6200510SOD-123GRB751BS-400.15400.20.3710.530SOD-882SD103CWSG0.22020.6200510SOD-323GSD103BWG0.43020.6200520SOD-123GMBR30200CT2000.91520200TO-220SD103BWSG0.23020.6200520SOD-323GSD103AWG0.44020.6200530SOD-123GRB521S8-300.15300.50.52003010SOD-882B5819WS0.254090.6100010004030SOD-323MSK4010 -- 4060.810001000040-- SOD-523SD103AWSG0.24020.6200530SOD-323GB5819WG0.54090.61000100040SOD-123GRB520S8-300.15300.50.6200110SOD-882MBR10100CT1000.855100100TO-220BAS850.23040.240.12255LL-34TCBAT850.23040.240.12255DO-35TCBAT430.23040.3320.5255DO-35产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineTCBAT420.23040.4100.5255DO-35TCRB520S-300.20.6200110SOD-523MBRF3065CT652000.6415150065TO-220MBRF20200CT2000.9510200200TO-220MBRF20150CT1500.910200150TO-220MBRF20100CT1000.8510200100TO-220MBRF10200CT2000.955100200TO-220MBRF10150CT1500.95100150TO-220MBRF10100CT1000.855100100TO-220MBR20200CT2000.910200200TO-220MBR20150CT1500.8510200150TO-220MBR20100CT1000.810200100TO-220MBR10200CT2000.955100200TO-220MBR10150CT1500.95100150TO-220BAT54ST0.15300.241002255SOT-523BAT54T0.15300.241002255SOT-523RB520S-400.2400.6200110SOD-523BAT43XV20.23040.410500255SOD-523BAT42XV20.23040.410500255SOD-523BAT54XV20.23040.240.12255SOD-523产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineTCRB751S-400.2400.20.3710.530SOD-523TCRB521S-300.20.52003010SOD-523RB500V-404510.4510110SOD-323SD103CWS0.22020.6200510SOD-323SD103BWS0.23020.6200520SOD-323SD103AWS0.24020.6200530SOD-323BAT54WS0.23040.240.12255SOD-323RB751V-400.2400.20.3710.530SOD-323BAT43WS0.23040.3320.5255SOD-323BAT42WS0.23040.4100.5255SOD-323RB501V-400.210.341010040SOD-323RB551V-300.250.3610010020SOD-323B5819W0.54090.61000100040SOD-123SD103CW0.42020.6200510SOD-123SD103BW0.43020.6200520SOD-123SD103AW0.44020.6200530SOD-123BAT54W0.43040.4102255SOD-123BAT43W0.43040.4100.5255SOD-123BAT42W0.43040.4100.5255SOD-123LL60P0.5455000.511151LL-34产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineLL600.5405000.510.5151LL-34LLBAT430.23040.3320.5255LL-34LLBAT420.23040.4100.5255LL-34TC1N60P0.5450.50.510.5151DO-35TC1N600.5400.150.510.5151DO-35触发二极管产品类型VBR Min.VBR Typ.VBR Max.ΔV@VF at 10mA IBO Package (V)(V)(V)(V)(μA)OutlineLLDB3283236550LL-34KELDB3283036550DO-35数字三极管产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE R1R2Package (W)(A)(V)(V)Min.@VCE@IC/IE Outline(V)(A)DTA143TE PNP0.15 -100mA-50-50100-5V-1mA 4.7∞SOT523DTA143EE PNP0.15 -100mA-50-5030-5V-10mA 4.7 4.7SOT523DTA124XE PNP0.15 -100mA-50-5068-5V-5mA2247SOT523DTA124EE PNP0.15 -100mA-50-5056-5V-5mA2222SOT523DTA123JE P NP0.15 -100mA-50-5080-5V-10mA 2.247SOT523DTA123EE PNP0.15 -100mA-50-508-10V -5mA 2.2 2.2SOT523 DTA114TE PNP0.15 -100mA-50-50100-5V-1mA10∞SOT523 DTA143ZE PNP0.15 -100mA-50-5080-5-0.01 4.747SOT523 DTA144EE PNP0.15 -100mA-50-5068-5-0.0054747SOT523 DTA114YE PNP0.15 -100mA-50-5068-5-0.0051047SOT523 DTA114EE PNP0.15 -100mA-50-5030-5-0.0051010SOT523 DTC123JE N PN0.150.1505080100.005 2.247SOT-523DTC124XE NPN0.150.1505080100.0052247SOT-523 DTC143ZE NPN0.150.1505080100.005 4.747SOT-523 DTC143EE NPN0.150.1505015100.005 4.7 4.7SOT-523 DTC123EE NPN0.150.150508100.005 2.2 2.2SOT-523 DTC143TE NPN0.150.150********.005 4.7∞SOT-523 DTC114TE NPN0.150.150********.00510∞SOT-523 DTC114YE NPN0.150.1505080100.0051047SOT-523DTC144EE NPN0.150.1505080100.0054747SOT-523产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE R1R2Package (W)(A)(V)(V)Min.@VCE@IC/IE Outline(V)(A)DTC124EE NPN0.150.1505060100.0052222SOT-523 DTC114EE NPN0.150.1505035100.0051010SOT-523产品类型Ptot VR IF trr VF IR IFSM IFRM Cd Package (mW)(V)(mA)(ns)(mV)(nA)(A)(mA)(pF)PH1N4148TR50010020041000@IF=10mA25@VR=20V44504SOD27PH1N4148TB50010020041000@IF=10mA25@VR=20V44504SOD27PH1N4148T26B50010020041000@IF=10mA25@VR=20V44504SOD27 PH1N4448TR50010020041000@IF=100mA25@VR=20V44504SOD27PH1N4448TB50010020041000@IF=100mA25@VR=20V44504SOD27PH1N4448T26B50010020041000@IF=100mA25@VR=20V44504SOD27 PH1N914BTR3507525041000@IF=100mA5000@VR=75V44502SOD27 PH1N914BTB3507525041000@IF=100mA5000@VR=75V44502SOD27PH1N914BT26B3507525041000@IF=100mA5000@VR=75V44502 SOD27MOS场效应管产品类型Type V DS VGS ID Vgs(th)Vgs(th)PD RDSON Package(V)(±V)(A)MIN(V)MAX(V)(W)MAX(Ω)OutlineLSI1012XT1G MOSFET2060.50.450.90.150.7SOT-5232SK3019MOSFET30200.10.8 1.50.158SOT-5232N7002T MOSFET60200.1151 2.50.157.5SOT-523产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE HFE fT PackageMin.Max.@VCE@IC/IE Outline(W)(A)(V)(V)(V)(A)(MHz)双极型三极管MMBT3906T PNP0.2-0.2-40-40100300-1-0.01250SOT523 MMBT3904T NPN0.20.2604010030010.01200SOT-5232SC4617NPN0.150.1505012056060.001230SOT-5232SA1774PNP0.15 -0.1-50-50120560-6-0.001230SOT523。

bat54s电路设计

bat54s电路设计BAT54S是一种常见的二极管，它由三个PN结组成。

这种二极管被广泛应用于电子电路中，具有多种功能和特性。

BAT54S具有高速开关特性。

它的响应时间非常短，能够快速切换电流，使得它在高频电路中表现出色。

这使得BAT54S广泛应用于无线通信设备、射频电路和高速数据传输系统中。

BAT54S还具有低反向漏电流特性。

它的反向漏电流非常小，可以忽略不计。

这使得BAT54S在需要高效节能的电路中非常受欢迎，例如电池供电的设备和低功耗电子系统。

BAT54S还具有良好的电压特性。

它的额定工作电压较高，通常为30V，这使得它能够承受较高的电压，保证电路的稳定性和可靠性。

同时，BAT54S还具有较低的开启电压和导通电压，可以在较低的电压下正常工作。

BAT54S的封装形式多样，常见的有SOT-23和SOT-323封装。

这种封装形式使得它非常适合于表面贴装技术，可以方便地集成到PCB板上，节省空间，提高电路的集成度。

在实际电路设计中，BAT54S可以用于多个应用。

例如，它可以作为电压限制器，用于保护其他器件免受过高的电压损坏。

此外，BAT54S还可以用作整流器，将交流信号转换为直流信号。

此外，它还可以用作电流源、电压源、反向保护等多种电路中。

BAT54S的应用范围非常广泛，从消费电子产品到工业控制系统，都可以看到它的身影。

它可以用于手机、平板电脑、电视机等消费电子设备中的电源管理、信号处理、通信接口等功能。

同时，它也可以用于汽车电子、医疗设备、航空航天等领域。

BAT54S作为一种常见的二极管，具有高速开关特性、低反向漏电流特性和良好的电压特性。

它的封装形式多样，适合表面贴装技术，方便集成到电路中。

在实际应用中，BAT54S可以用于多种电路，具有广泛的应用范围。

无论是消费电子产品还是工业控制系统，BAT54S都发挥着重要的作用，为电子设备提供稳定可靠的电路保护和信号处理功能。

BAT54CLT1G;BAT54CLT3G;中文规格书,Datasheet资料

BAT54CLT1G,SBAT54CLT1GDual Common Cathode Schottky Barrier DiodesThese Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.Features∙Extremely Fast Switching Speed∙Low Forward V oltage − 0.35 V (Typ) @ I F = 10 mAdc∙AEC Qualified and PPAP Capable∙S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements∙These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS(T J = 125︒C unless otherwise noted)Rating Symbol Value Unit Reverse Voltage V R30VForward Power Dissipation @ T A = 25︒CDerate above 25︒C P F2251.8mWmW/︒CThermal Resistance (Note 1) Junction-to-Ambient (Note 2)R q JA508311︒C/WForward Current (DC)I F200 Max mANon−Repetitive Peak Forward Current t p < 10 msec I FSM600mARepetitive Peak Forward Current Pulse Wave = 1 sec,Duty Cycle = 66%IFRM300mAJunction Temperature T J−55 to +125︒C Storage Temperature Range T stg−55 to +150︒C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−4 @ Minimum Pad.2.FR−4 @ 1.0 x 1.0 inch Pad.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.30 VOLTDUAL COMMON CATHODE SCHOTTKY BARRIER DIODESCATHODE12MARKING DIAGRAM†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.SOT−23CASE 318STYLE 95C= Device CodeM= Date CodeG= Pb−Free Package15C M GG*Date Code orientation and/or position mayvary depending upon manufacturing location.Device Package Shipping†ORDERING INFORMATIONBAT54CLT1G SOT−23(Pb−Free)3,000 /Tape & ReelBAT54CLT3G SOT−23(Pb−Free)10,000 /Tape & Reel (*Note: Microdot may be in either location) SBAT54CLT1G SOT−23(Pb−Free)3,000 /Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (EACH DIODE)Characteristic Symbol Min Typ Max UnitReverse Breakdown Voltage (I R = 10 m A)V(BR)R30−−VTotal Capacitance(V R = 1.0 V, f = 1.0 MHz)C T−7.610pFReverse Leakage (V R = 25 V)I R−0.5 2.0m AForward Voltage (I F = 0.1 mAdc)V F−0.220.24VForward Voltage(I F = 30 mAdc)V F−0.410.5VForward Voltage(I F = 100 mAdc)V F−0.520.8VReverse Recovery Time(IF = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)trr−− 5.0nsForward Voltage(I F = 1.0 mAdc)V F−0.290.32VForward Voltage(I F = 10 mAdc)V F−0.350.40VNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F) of 10 mA.2. Input pulse is adjusted so I R(peak) is equal to 10 mA.3. t p » t rrV Rt r10%90%IIOUTPUT PULSE(I F = I R = 10 mA; measuredat i R(REC) = 1 mA)INPUT SIGNALFigure 1. Recovery Time Equivalent Test CircuitC T , T O T A L C A P A C I T A N C E (p F )100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.001140V R , REVERSE VOLTAGE (VOLTS)124205101530Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance100100025206810I R , R E V E R S E C U R R E N T (m A )I F , F O R W A R D C U R R E N T (m A )PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE APSTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISHTHICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.VIEW CDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1 2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.0290−−−100−−−10q︒︒︒︒ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIBAT54CLT1G BAT54CLT3G。

BAT54S BAT54肖特基二极管参数

-55 to +150
℃
TJ
Operating Junction Temperature工作结温
-55 to +150
℃
电气特性：
符号
Parameter参数
Conditions测试条件
最小
最大
单位
VR
Breakdown Voltage击穿电压
IR30-Fra bibliotekVVF
Forward Voltage正向电压
IF = 0.1mA
IF = IR = 10mA, IRR = 1.0mA,
RL = 100Ω
-
5.0
nS
BAT54封装外型及引脚图
BAT54
BAT54A
BAT54C
BAT54S
BAT54FILM
BAT54AFILM
BAT54CFILM
BAT54SFILM
BAT54S BAT54肖特基二极管参数
来源：|时间：2010年05月02日
三端贴片肖特基二极管BAT54/BAT54A/BAT54C/BAT54S
特点：
极小传导损耗
开关损耗可以忽略不计
低正向压降
表面贴装器件
肖特基势垒二极管封装采用SOT-23
绝对最大额定值：
Symbol符号
Parameter参数
Value数值
Unit单位
VRRM
Maximum Repetitive Reverse Voltage最大重复反向电压
30
V
IF(AV)
Average Rectified Forward Current平均正向电流整流
200
mA
IFSM

BAT54W芯片手册

Packaging 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel
Mechanical Data
Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.006 grams (approximate)
SOT323
Top View
BAT54W-KL5
BAT54AW-KL6
BAT54CW-KL7
BAT54SW-KL8
Ordering Information (Note 5)
Part Number BAT54W-7-F BAT54W-13-F BAT54WQ-7-F BAT54AW-7-F BAT54AW-13-F BAT54AWQ-7-F BAT54CW-7-F BAT54CW-13-F BAT54CWQ-7-F BAT54SW-7-F BAT54SW-13-F BAT54SWQ-7-F

BAT54W,115;BAT54CW,115;BAT54SW,115;BAT54AW,115;中文规格书,Datasheet资料

DATA SHEETProduct speciﬁcationSupersedes data of October 19931996Mar 19BAT54W seriesSchottky barrier (double) diodesook, halfpageM3D088Schottky barrier (double) diodes BAT54W seriesFEATURES•Low forward voltage•Guard ring protected•Very small SMD package.APPLICATIONS•Ultra high-speed switching •Voltage clamping•Protection circuits•Blocking diodes.DESCRIPTIONPlanar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available.PINNINGPINBAT54W AW CW SW1a k1a1a12n.c.k2a2k23k a1,a2k1,k2k1,a 2Fig.1Simplified outline(SOT323) and pinconfiguration.handbook, 2 columns312MBC870Top viewFig.2BAT54W single diodeconfiguration (symbol).312n.c.MLC357Fig.3BAT54AW diodeconfiguration (symbol).312MLC360Fig.4BAT54CW diodeconfiguration (symbol).312MLC359Fig.5BAT54SW diodeconfiguration (symbol).312MLC358MARKINGTYPE NUMBER MARKING CODEBAT54W L4 BAT54AW42 BAT54CW43 BAT54SW44Schottky barrier (double) diodesBAT54W seriesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).ELECTRICAL CHARACTERISTICS T amb =25°C unless otherwise speciﬁed.Note1.Pulsed test: t p =300µs;δ=0.02.THERMAL CHARACTERISTICS Note1.Refer to SOT323 standard mounting conditions.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V R continuous reverse voltage −30V I F continuous forward current −200mA I FRM repetitive peak forward current t p ≤1s;δ≤0.5−300mA I FSM non-repetitive peak forward current t p <10ms −600mA P tot total power dissipation (per package)T amb ≤25°C−200mW T stg storage temperature −65+150°C T j junction temperature−125°C T amboperating ambient temperature−65+125°CSYMBOL PARAMETERCONDITIONSMAX.UNITPer diode V Fforward voltagesee Fig.6I F =0.1mA 240mV I F =1mA 320mV I F =10mA 400mV I F =30mA 500mV I F =100mA800mV I R reverse current V R =25V; note 1; see Fig.72µA t rrreverse recovery timewhen switched from I F =10mA to I R =10mA; R L =100Ω; measured at I R =1mA: see Fig.95nsC d diode capacitance f =1MHz; V R =1V; see Fig.810pFSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-a thermal resistance from junction to ambientnote 1625K/WSchottky barrier (double) diodesBAT54W seriesGRAPHICAL DATAhandbook, halfpage10I F V F (V)310(mA)21011011.20.80.40MSA892(3)(2)(1)(3)(2)(1)(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.6Forward current as a function of forward voltage; typical values.0102030V (V)R103I R(µA)102101101(1)(2)(3)MSA893(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.7Reverse current as a function of reverse voltage; typical values.010203051015V (V)RC d (pF)MSA891Fig.8Diode capacitance as a function of reversevoltage; typical values.f =1MHz; T amb =25°C.Fig.9 Reverse recovery definitions.handbook, halfpage 90%10%t fQ dI dttIFI RMRC129 - 1F rSchottky barrier (double) diodesBAT54W seriesPACKAGE OUTLINEDEFINITIONS LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speciﬁcation.handbook, full pagewidth0.250.10B0.20.2AAM M 1230.651.32.21.80.400.30B1.351.152.22.0detail XX1.1max0.10.01.00.80.30.10.2MBC871Dimensions in mm.Fig.10 SOT323.分销商库存信息:NXPBAT54W,115BAT54CW,115BAT54SW,115 BAT54AW,115。

BAT54CW 双二极管

DATA SHEETProduct speciﬁcationSupersedes data of October 19931996Mar 19BAT54W seriesSchottky barrier (double) diodesook, halfpageM3D088Schottky barrier (double) diodes BAT54W seriesFEATURES•Low forward voltage•Guard ring protected•Very small SMD package.APPLICATIONS•Ultra high-speed switching •Voltage clamping•Protection circuits•Blocking diodes.DESCRIPTIONPlanar Schottky barrier diodes encapsulated in a SOT323 very small plastic SMD package. Single diodes and double diodes with different pinning are available.PINNINGPINBAT54W AW CW SW1a k1a1a12n.c.k2a2k23k a1,a2k1,k2k1,a 2Fig.1Simplified outline(SOT323) and pinconfiguration.handbook, 2 columns312MBC870Top viewFig.2BAT54W single diodeconfiguration (symbol).312n.c.MLC357Fig.3BAT54AW diodeconfiguration (symbol).312MLC360Fig.4BAT54CW diodeconfiguration (symbol).312MLC359Fig.5BAT54SW diodeconfiguration (symbol).312MLC358MARKINGTYPE NUMBER MARKING CODEBAT54W L4 BAT54AW42 BAT54CW43 BAT54SW44Schottky barrier (double) diodesBAT54W seriesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).ELECTRICAL CHARACTERISTICS T amb =25°C unless otherwise speciﬁed.Note1.Pulsed test: t p =300µs;δ=0.02.THERMAL CHARACTERISTICS Note1.Refer to SOT323 standard mounting conditions.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNITPer diode V R continuous reverse voltage −30V I F continuous forward current −200mA I FRM repetitive peak forward current t p ≤1s;δ≤0.5−300mA I FSM non-repetitive peak forward current t p <10ms −600mA P tot total power dissipation (per package)T amb ≤25°C−200mW T stg storage temperature −65+150°C T j junction temperature−125°C T amboperating ambient temperature−65+125°CSYMBOL PARAMETERCONDITIONSMAX.UNITPer diode V Fforward voltagesee Fig.6I F =0.1mA 240mV I F =1mA 320mV I F =10mA 400mV I F =30mA 500mV I F =100mA800mV I R reverse current V R =25V; note 1; see Fig.72µA t rrreverse recovery timewhen switched from I F =10mA to I R =10mA; R L =100Ω; measured at I R =1mA: see Fig.95nsC d diode capacitance f =1MHz; V R =1V; see Fig.810pFSYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-a thermal resistance from junction to ambientnote 1625K/WSchottky barrier (double) diodesBAT54W seriesGRAPHICAL DATAhandbook, halfpage10I F V F (V)310(mA)21011011.20.80.40MSA892(3)(2)(1)(3)(2)(1)(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.6Forward current as a function of forward voltage; typical values.0102030V (V)R103I R(µA)102101101(1)(2)(3)MSA893(1)T amb =125°C.(2)T amb =85°C.(3)T amb =25°C.Fig.7Reverse current as a function of reverse voltage; typical values.010203051015V (V)RC d (pF)MSA891Fig.8Diode capacitance as a function of reversevoltage; typical values.f =1MHz; T amb =25°C.Fig.9 Reverse recovery definitions.handbook, halfpage 90%10%t fQ dI dttIFI RMRC129 - 1F rSchottky barrier (double) diodesBAT54W seriesPACKAGE OUTLINEDEFINITIONS LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.Limiting valuesLimiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application informationWhere application information is given, it is advisory and does not form part of the speciﬁcation.handbook, full pagewidth0.250.10B0.20.2AAM M 1230.651.32.21.80.400.30B1.351.152.22.0detail XX1.1max0.10.01.00.80.30.10.2MBC871Dimensions in mm.Fig.10 SOT323.。

肖特基二极管 BAT54W-D 数据表说明书

BAT54WSchottky Barrier DiodeThese Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.Features•Extremely Fast Switching Speed•Extremely Low Forward V oltage − 0.35 V (Typ) @ I F = 10 mAdc •NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC −Q101Qualified and PPAP Capable•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS (T J = 125°C unless otherwise noted)RatingSymbol ValueUnit Reverse VoltageV R 30V Forward Power Dissipation @ T A = 25°CDerate above 25°C P F2001.6mW mW/°CForward Current (DC)I F 200 MaxmA Non −Repetitive Peak Forward Current,t p < 10 msecI FSM600mARepetitive Peak Forward Current Pulse Wave = 1 sec, Duty Cycle = 66%I FRM300mAThermal Resistance, Junction −to −Ambient 10 mm 2 pad, 1 oz. Cu 100 mm 2 pad, 1 oz. Cu R qJA285216°C/WJunction Temperature T J −55 to 125°C Storage Temperature RangeT stg−55 to +150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.3130 VOLTSCHOTTKY BARRIER DETECTOR AND SWITCHINGDIODE†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.Device Package Shipping †ORDERING INFORMATIONBAT54WT1G SOT −323(Pb −Free)3,000 / Tape & Reel SOT −323CASE 419STYLE 2MARKING DIAGRAMB4M G GB4= Device Code M = Date Code*G= Pb −Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing location.1NSVBAT54WT1GSOT −323(Pb −Free)3,000 / Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 10 m A)V (BR)R 30−−V Total Capacitance(V R = 1.0 V, f = 1.0 MHz)C T −7.610pF Reverse Leakage (V R = 25 V)I R −0.5 2.0m Adc Forward Voltage (I F = 0.1 mA)(I F = 1.0 mA)(IF = 10 mA)(I F = 30 mA)(I F = 100 mA)V F−−−−−0.220.290.350.410.520.240.320.400.500.80VReverse Recovery Time(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)t rr−−5.0nsNotes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F ) of 10 mA.2. Input pulse is adjusted so I R(peak) is equal to 10 mA.3. t p » t rrV Rt r10%90%I I OUTPUT PULSE(I F = I R = 10 mA; measuredat i R(REC) = 1 mA)INPUT SIGNALFigure 1. Recovery Time Equivalent Test CircuitC T , T O T A L C A P A C I T A N C E (p F )100V F , FORWARD VOLTAGE (VOLTS)101.00.110V R , REVERSE VOLTAGE (VOLTS)1.00.10.010.001V R , REVERSE VOLTAGE (VOLTS)5101530Figure 2. Forward VoltageFigure 3. Leakage CurrentFigure 4. Total Capacitance10010002520I R , R E V E R S E C U R R E N T (m A )I F , F O R W A R D C U R R E N T (m A )14121086420SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSPUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

BAT54C中文资料_数据手册_参数

Tj = 25 °C IF = 10 mA IF = 30 mA IF = 100 mA
Typ.
Max. Unit
1 µA
100
240
320
400 mV
500
900
Symbol
Table 5. Dynamic characteristics
Parameter
Test conditions
C Diode capacitance
current (typical values)
C(pF) 10
F=1MHz
VOSC=30mVRMS Tj=25°C
1.E+00 IFM(A) 1.E-01
Tj=100°C
1.E-02 1.E-03
Tj=50°C Tj=25°C Tj=-40 °C
VR(V) 1
1.E-04
VFM(V)
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
1
Characteristics
BAT54
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM IF
IFSM Tstg Tj TL
0.148
Figure 12. SOD123 footprint dimensions in mm (inches)

6/15

BAT54WPBF资料

Document Number: 94274For technical questions, contact: diodes-tech@Schottky Diode, 0.2 ABAT54WPbFVishay High Power ProductsFEATURES•Small foot print, surface mountable •Very low forward voltage drop•Extremely fast switching speed for highfrequency operation•Guard ring for enhanced ruggedness and long term reliability•Lead (Pb)-free•Designed and qualified for industrial levelDESCRIPTIONThis Schottky barrier diode is designed for high speed switching applications, voltage clamping and circuit protection. Miniature surface mount packages with reduced foot print are excellent for portable applications where space is limited.PRODUCT SUMMARYI F(AV)0.2 A V R30 VMAJOR RATINGS AND CHARACTERISTICSSYMBOL CHARACTERISTICSVALUES UNITS I F DC0.2A V RRM 30V I FSM t p = 10 ms sine 1.0A V F 30 mA DC, T J = 25 °C 0.5V P d Power dissipation at T A = 25 °C 200mW T JRange - 65 to 150°CVOLTAGE RATINGSPARAMETERSYMBOLBAT54WPbFUNITS Maximum DC reverse voltageV R 30VMaximum working peak reverse voltageV RWMABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL TEST CONDITIONSVAL U ES UNITSForward currentI F DC0.2A Maximum peak one cycle non-repetitive surge current at T J = 25 °CI FSM5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated V RRM applied8.410 ms sine or 6 ms rect. pulse0.6* Pb containing terminations are not RoHS compliant, exemptions may apply元器件交易网For technical questions, contact: diodes-tech@Document Number: 94274BAT54WPbFVishay High Power ProductsSchottky Diode, 0.2 ANote(1)Pulse width < 300 µs, duty cycle < 2 %Note(1)thermal runaway condition for a diode on its own heatsinkELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONS VAL U ES UNITSMaximum forward voltage dropV FM (1)0.1 A T J = 25 °C0.65V30 mA0.5010 mA 0.401 mA 0.320.1 mA0.24Maximum reverse leakage current I RM (1)V R = 25 V 2µA V R = 30 V3Maximum junction capacitance C T V R = 1 V DC (test signal range 100 kHz to 1 MHz) T J = 25 °C 10pF Maximum voltage rate of change dV/dtRated V R10 000V/µsTHERMAL - MECHANICAL SPECIFICATIONSPARAMETERSYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storagetemperature rangeT J (1), T Stg - 65 to 150°C Maximum thermal resistance, junction to ambient R thJAMounted on PC board FR4 with minimum pad size 625°C/W Approximate weight 0.006gMarking device Case style SOT-323IYWLCdP tot dT J -------------1R thJA--------------<元器件交易网Document Number: 94274For technical questions, contact: diodes-tech@BAT54WPbFSchottky Diode, 0.2 AVishay High Power ProductsFig. 1 - Maximum Forward Voltage Drop Characteristics(Per Leg)Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage (Per Leg)Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage(Per Leg)Fig. 4 - Forward Power Loss CharacteristicsFig. 5 - Maximum Non-Repetitive Surge Current元器件交易网元器件交易网Vishay High Power Products Schottky Diode, 0.2 AORDERING INFORMATION TABLEDEVICE PACKAGE MARKING CONFIGURATION BASE QUANTITY DELIVERY MODEBAT54W SOT-323IYWLC Single3000Tape and reelLINKS TO RELATED DOCUMENTSDimensions /doc?95050Part marking information /doc?95338Packaging information /doc?95061 For technical questions, contact: diodes-tech@ Document Number: 94274Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。

bat54在电路中的作用

BAT54在电路中的作用一、引言在现代电子设备中，电路元件的选择和应用是非常重要的。

BAT54是一种常见的双向二极管，被广泛应用于各种电路中。

本文将详细探讨BAT54在电路中的作用，包括其特性、应用范围以及优势等方面。

二、BAT54的特性BAT54是一种双向二极管，由三个PN结组成。

它具有以下主要特性： 1. 低反向漏电流：BAT54的反向漏电流非常低，这使得它在电路中可以作为高阻抗元件使用。

2. 低正向压降：BAT54的正向压降较低，这使得它在电路中可以提供较低的功耗。

3. 快速开关速度：BAT54的开关速度非常快，响应时间短，适合用于高频电路。

4. 小尺寸：BAT54的尺寸小巧，适合在空间有限的电路中使用。

三、BAT54的应用范围BAT54作为一种常见的双向二极管，广泛应用于各种电路中，包括但不限于以下方面：1. 信号整形和保护BAT54可以用于信号整形和保护电路中。

例如，在模拟信号处理电路中，BAT54可以用于限制信号的幅度，避免过大的信号对后续电路产生影响。

同时，BAT54还可以用作电路的保护，防止反向电压或过大电压对电路元件造成损坏。

2. 开关电路由于BAT54具有快速的开关速度和低正向压降，它常常用于开关电路中。

例如，在高频开关电路中，BAT54可以实现快速的信号开关，保证电路的稳定性和可靠性。

3. 电源管理BAT54可以用于电源管理电路中。

例如，在电源选择电路中，BAT54可以实现电源的切换，以提供稳定的电压输出。

此外，BAT54还可以用于电池充放电管理电路中，实现电池的充放电控制。

4. 通信设备BAT54广泛应用于各种通信设备中。

例如，在手机、无线电和卫星通信设备中，BAT54可以用于信号放大、信号整形和保护等功能，提高通信设备的性能和可靠性。

四、BAT54的优势BAT54作为一种双向二极管，具有以下优势：1. 尺寸小巧BAT54的尺寸非常小，适合在空间有限的电路中使用。

这使得它可以被广泛应用于各种电子设备中，满足紧凑型设计的需求。

BAT54TW贴片三极管规格书

A,Sep,2010
【领先的片式无源器件整合供应商—南京南山半导体有限公司】

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter Reverse voltage Reverse current Symbol V(BR) IR IR=100μA VR=25V IF=1mA Forward voltage VF IF=10mA IF=30mA IF=100mA Total capacitance Reverse recovery time Ctot trr VR=1V,f=1MHz IF= IR=10mA, Irr=0.1×IR, RL=100Ω Test conditions Min 30 2 320 400 500 1000 10 5 pF ns mV Typ Max Unit V μA
SCHOTTKY BARRIER DIODE ARRAYS FEATURES

SOT-363
Low Forward Voltage Drop Fast Switching Small Surface Mount Package PN Junction Guard Ring for Transient and ESD Protection Available in Lead Free Version
【领先的片式无源器件整合供应商—南京南山半导体有限公司】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Diodes
BAT54ADW /BAT54BRW / BAT54CDW /BAT54SDW /BAT54TW

bat54c工作原理

BAT54C工作原理一、BAT54C简介BAT54C是一款具有三个整流二极管的超快速开关二极管，被广泛应用于各种电路中。

本文将详细探讨BAT54C的工作原理以及其在电路中的应用。

二、BAT54C的结构和特性BAT54C是由三个二极管组成的，其结构如下图所示：______K ---| |--- A| |A ---| |--- K|______|______K ---| |--- C| |C ---| |--- K|______|BAT54C的A端是阳极（正极，Anode），C端是阴极（负极，Cathode），而两个K 端则是连接外部电路的引脚。

BAT54C的主要特性包括： - 高反向击穿电压：BAT54C的K和A之间以及K和C之间的反向击穿电压均为30V，可保证其在一定程度下具备良好的电压稳定性。

- 低导通电压：BAT54C的导通电压在正向工作时非常低，一般为0.25V，使其在电路中能够有效地减小功耗。

- 快速的恢复时间：BAT54C具有快速的恢复时间，通常为4 ns，适用于高频应用。

- 小尺寸：BAT54C的尺寸非常小，适合于高集成度和小型化电路的需求。

三、BAT54C的工作原理BAT54C是一种超快速开关二极管，它的工作原理可以分为正向工作和反向工作两种情况。

3.1 正向工作原理当BAT54C的A端较高电压（正向电压）施加在A端，而C端为低电压时，BAT54C处于正向工作状态。

在正向工作状态下，当正向电压施加在A端时，PN结会正向偏置，A端处于正相对于C端的电位上，电子从N区向P区注入，而空穴从P区向N区注入。

这种注入现象导致PN结的耗尽区消除，电流得以流过。

3.2 反向工作原理当BAT54C的A端较低电压（反向电压）施加在A端，而C端为高电压时，BAT54C处于反向工作状态。

在反向工作状态下，当反向电压施加在A端时，PN结会反向偏置，A端处于负相对于C端的电位上，电子从P区向N区扩散，而空穴从N区向P区扩散。