DSR1M二极管规格书(常州星海)
超快恢复二极管 ES2B SMB(DO-214AA)系列规格书推荐
MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.005 ounce, 0.138 grams
CJ
25.0
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ T, STG
20.0 -50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2%
50Ω
10Ω
25Vdc
1Ω
Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive
S8贴片二极管规格书(常州星海)
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2.7(0.106) 2.6(0.102)
MECHANICAL DATA
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037) .135(.005) .127(.004) 0.6(.023) 0.5(.020) 1.15(.045) 1.05(.041)
【 领先的片式无源器件整合供应商 — 南京南山半导体有限公司 】
BAT42W-BAT43W
SCHOTTKY DIODES
SOD-123
1.80(.071) 1.40(.055) 1.65(.065) 1.55(.061)
FEATURES
Low forward voltage drop Fast switching time Surface mount package ideally suited for automatic insertion
100
TA=125 C
10 TA=75 C
CT, TOTAL CAPACITANCE (pF)
10
1.0
TA=25 C 0.1
TA=125 C f=1MHz
0.01 0 10 20 30 40
1.0 0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE.(V)
VR, REVERSE VOLTAGE.(V)
R
LING
JIE
STAR SEA ELECTRONICS CO.,LTD.
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
DSS26二极管规格书(常州星海)
DSS22 THRU DSS210SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 100 Volts Forward Current - 2.0 AmpereCase : JEDEC SOD-123FL molded plastic body Terminals : S olderable per MIL-STD-750,Method 2026Polarity : Color band denotes cathode end Mounting Position : AnyWeight :0.0007 ounce, 0.02 gramsFEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.The plastic package carries Underwriters Laboratory Flammability Classification 94V-0Metal silicon junction,majority carrier conduction Low power loss,high efficiencyHigh forward surge current capability High temperature soldering guaranteed:250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tensionDSS22D22SYMBOLS UNITS DSS210D210Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.201420V RRM V RMS V DC I (AV)I FSM V F 2.040.00.70Operating junction temperature range Maximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C Typical junction capacitance (NOTE 1)I R 0.5C J T J T STG80Storage temperature rangeDSS23D23DSS25D25DSS24D24DSS26D26DSS28D28DSS27D27DSS29D2930213040284050355060426080568010070100704970906390VOLTS VOLTS VOLTS Amp AmpsVolts pF C mA C-65 to +150-65 to +125-65 to +15010.05.00.550.85220SOD-123FLDimensions in millimetersRATINGS AND CHARACTERISTIC CURVES DSS22 THRU DSS2100.2 0.4 0.6 0.8 1.0 1.1FIG. 3-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSNUMBER OF CYCLES AT 60 HzFIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E SI N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E SP E A K F O R W AR D S U R G E C U R R E N T ,A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTS1001010.10.010.001PERCENT OF PEAK REVERSE VOLTAGE,%FIG. 4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L A M P E R E SAMBIENT TEMPERATURE, C REVERSE VOLTAGE,VOLTSFIG. 5-TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E , p F1010010002000【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板。
SJ贴片二极管规格书
B5817W THRU B5819WSCHOTTKY DIODECase : Molded plastic bodyTerminals : Plated leads solderable per MIL-STD-750, Method 2026Polarity : Polarity symbols marked on caseMarking : B5817W:SJ, B5818W:SK, B5819W:SLFEATURESMECHANICAL DATAFor use in low voltage, high frequency inverters Free wheeling, and polanty protection applicationsElectrical ratings @T A =25C SYMBOLSTest conditions V (BR)Reverse breakdown voltageReverse voltage leakage currentForward voltageDiode capacitance PARAMETERMin.Max.Unit V V VI R =1mA 0.450.750.550.8750.60.9120191.5250500-65 to +15030Maximum ratings and electrical characteristics, Single diode @T A =25C SYMBOLSUNITS V RRM V RWM V R Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltageAverage rectified output currentPeak forward surge current @=8.3ms Repetitive peak forward current Power dissipationThermal resistance junction to ambient Storage temperatureNon-Repetitive peak reverse voltage T STG V RMV V A A A mW K/W C VB5818W3021V R(RMS)I O Pd PARAMETERI FSM R ΘJA I R203040pFI FRM B5817WB5819W 204014282040C D V F1mAV V VV R =4V,f=1.0MHzB5817W B5818W B5819W V R =20V V R =30V V R =40VB5817W B5818W B5819W I F =1A I F =3AB5817WB5818W B5819WSOD-123Dimensions in millimeters and (inches)RATINGS AND CHARACTERISTIC CURVES B5817W THRU B5819W0 10 100NUMBER OF CYCLES AT 60HzFIG. 2-MAXIMUM NON-REPETITIVE PEAKFORWARD SURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D C U R R E N T (A )10.89.07.25.43.61.8CASE TEMPERATURE( C )P E A K F O R W A R D S U R G E C U R R E N T (A )0 20 40 60 80 100 120 140FIG. 3- TYPICAL INSTANTANEOUSI NS T A N T A N E OU S F O R W A R D C U R R E N T (A )0 0.4 0.8 1.2 1.6INSTANTANEOUS FORWARD VOLTAGE(V)FIG. 4- TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )0 20 40 60 80 100100101.00.10.010.001PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)FIG. 5- TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E (p F )REVERSE VOLTAGE (V)400100100.1 1 10 1000.01 1 10 1001001010.1T R A N S I E N T T H E R M A L I M P E D A N C E ( C /W )FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCEt--PULSE DURATION (sec.)【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板。
MM1Z2V0-MM1Z75规格书及承认书
日期(Date)2013.1.15检查项目Item 测试条件Condition 测试规格Specificati on 抽样数量允收标准AQL 判定合格卷数判定不合格卷数坏品总数RejVF IF=10mA <0.9V 1000收1退100VZ IZT=5mA 4-4.6V 1000收1退100IRVR=1V<5uA1000收1退1000收1退1000收1退100整盘数量0收1退100排 向0收1退100注塑管壳0收1退100刻 字0收1退100成型引脚0收1退100贴 带0收1退100空 位0收1退100其它外观0收1退100包装标贴内容(含RoHS标签)0收1退100标签与实物不符0收1退1审核:日期:2013.1.15返工 □批准:日期:RoHS检查:检测报告显示有害物质是否超标 是 □ 否 报告编号: CANEC1302011904备注(Remarks)返工情况: 生产确认:判别 合格 □ 不合格 □ 检查员:张秋燕已检合格数量:同意出厂杨奇林100100100已检不合格数量:特许出厂 □以卷为单位判断合格与否包装11100PCS外观性能100100订单号码(OrderNo.)电器性能测试参数(parameter)检收标准(Acceptance Criterion)备注RemarksSOD-123稳压二极管MM1Z4V3100100100SOD-123 品质保证报告SOD-123 QUALITY ASSURANCE REPORT文件编号:J-WI-Q-011(01)产品名称(part Name)规格(Type)批号(Lot No.)数量(Qty)100 PCS √√√四川蓝彩电子科技有限公司Sichuan Blue Colour Electronics Technology Co.,Ltd。
1n5819二极管的规格书
1n5819二极管的规格书1N5819二极管是一种高效能的二极管,常用于电源和开关电路中。
它具有以下规格:1. 最大正向电流:1A2. 最大反向电压:40V3. 正向压降:0.45V(在1A电流下)4. 反向泄漏电流:5μA(在25°C下)5. 反向恢复时间:15ns(在1A电流下)6. 封装类型:DO-411N5819二极管是一种快速恢复二极管,它能够迅速恢复到正常工作状态,从而提供更高的效率和更低的功耗。
这使得它非常适合于需要频繁开关的电路,比如开关电源和逆变器。
最大正向电流为1A,这意味着该二极管可以承受最大1A的电流,超过这个电流可能会损坏二极管。
因此,在设计电路时,需要确保电流不会超过1A,以保护二极管的正常工作。
最大反向电压为40V,这意味着该二极管可以承受最大40V的反向电压,超过这个电压可能会损坏二极管。
因此,在设计电路时,需要确保反向电压不会超过40V,以保护二极管的正常工作。
正向压降为0.45V,在1A电流下。
这意味着当1A的电流通过二极管时,会有0.45V的电压降。
这个电压降会导致功耗,因此在设计电路时需要考虑这个因素。
反向泄漏电流为5μA,在25°C下。
这意味着即使在反向电压下,二极管也会有少量的电流泄漏。
在设计电路时,需要将这个泄漏电流考虑在内,以确保电路的稳定性。
反向恢复时间为15ns,在1A电流下。
这意味着当二极管从正向导通状态切换到反向截止状态时,需要15ns的时间。
在设计高频电路时,需要考虑这个恢复时间,以确保电路的稳定性。
1N5819二极管采用DO-41封装,这是一种常见的二极管封装。
它具有简单的引脚结构,易于焊接和安装。
因此,在设计电路时,可以方便地使用1N5819二极管。
总结起来,1N5819二极管是一种高效能、快速恢复的二极管,常用于电源和开关电路中。
它具有最大正向电流1A、最大反向电压40V、正向压降0.45V(在1A电流下)、反向泄漏电流5μA(在25°C下)和反向恢复时间15ns(在1A电流下)的规格。
S7贴片二极管规格书(常州星海)
150
TA,AMBIENT TEMPERATURE( C)
VF INSTANTANEOUS FORWARD VOLTAGE (mV)
IR,INSTANTANEOUS REVERSE CURRENT(uA)
FIG. 3- TYPICAL REVERSE CHARACTERISTICS
1000 100
FIG. 4- TOTAL CAPACITANCE VS REVERSE VOLTAGE
.25(.010) MIN
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: BAT42W:S7, BAT43W:S8
100
TA=125 C
10 TA=75 C
CT, TOTAL CAPACITANCE (pF)
10
1.0
TA=25 C 0.1
TA=125 C f=1MHz
0.01 0 10 20 30 40
1.0 0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE.(V)
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
100 TA=125 C
IFM.FORWARD CURRENT(mA)
80
TA=75 C 10
TA=25 C
60
40 TJ=125 C 20
TA=-25 C
1
0 0
0.1 0 200 400 600 800
FOSAN富信电子 二极管 MB1S-MB10S-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10SBridge Rectifier Diode 整流桥■Features 特点Glass passivated chip junction 玻璃钝化结High surge current capability 高浪涌电流能力Reflow Solder Temperature 220℃回流焊温度220度Package 封装:MBS■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明,温度为25℃)Characteristic 特性参数Symbol 符号MB1S MB2S MB4S MB6S MB8S MB10S Unit 单位Peak Reverse Voltage 反向峰值电压V RRM 1002004006008001000V DC Reverse Voltage 直流反向电压V R(DC)1002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)70140280420560700V Forward Rectified Current 正向整流电流I F 0.8A Peak Surge Current 峰值浪涌电流I FSM 30A Thermal Resistance J-A 结到环境热阻R θJA 90℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg150℃,-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明,温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Typ 典型值Max 最大值Unit 单位Condition 条件Forward Voltage 正向电压降V F 1.01.1V I F =0.4A 0.8A Reverse Current (T A =25℃)反向漏电流(T A =125℃)I R 540uA V R =V RRM Diode Capacitance 二极管电容C D13pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10S ■Typical Characteristic Curve典型特性曲线Figure1:Forward Current Derating Curve Figure2:Peak Forward Surge CurrentFigure3:Instantaneous Forward Characteristics Figure4:Reverse Leakage CharacteristicsFigure5:Junction Capacitance CharacteristicsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10S ■Dimension外形封装尺寸。
US1B超快恢复整流SMA(DO-214AC)二极管规格书
1Surface Mount Ultrafast RectifierUS1A thru US1M FEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/EC•Halogen-free according to IEC 61249-2-21 definitionTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, and telecommunication.MECHANICAL DATACase: DO-214AC (SMA)Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoH S compliant, and commercial gradeTerminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode endPRIMARY CHARACTERISTICSIF(AV) 1.0 A V RRM 50 V to 1000 VI FSM 30 A t rr 50 ns, 75 ns V F 1.0 V, 1.7 V T J max.150 °CDO-214AC (S MA)MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOLUS1AUS1BUS1DUS1GUS1JUS1KUS1MUNITMaximum repetitive peak reverse voltage V RRM 501002004006008001000V Maximum RMS voltage V RMS 3570140280420560700V Maximum DC blocking voltageV DC 501002004006008001000V Maximum average forward rectified current at T L = 110 °C I F(AV) 1.0A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30A Operating and storage temperature rangeT J , T STG- 55 to + 150°C2Note(1)Pulse test: 300 μs pulse width, 1 % duty cycleNote(1)PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areaRATINGS AND CHARACTERSITICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum instantaneous forward voltage1.0 AV F (1) 1.01.7V Maximum DC reverse current at rated DC blocking voltage T A = 25 °C I R 10μAT A = 100 °C50Maximum reverse recovery timeI F = 0.5 A, I R = 1.0 A,I rr = 0.25 A t rr 5075ns Typical junction capacitance4.0 V, 1 MHzC J1510pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL US1AUS1BUS1DUS1G US1JUS1KUS1MUNIT Maximum thermal resistanceR θJA (1)75°C/WR θJL (1)27ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEUS1J-M3/61T 0.06461T 18007" diameter plastic tape and reel US1J-M3/5AT0.0645AT750013" diameter plastic tape and reelFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage CharacteristicsFig. 5 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Reverse Leakage Characteristics Fig. 7 - Typical Junction CapacitanceFig. 8 - Typical Transient Thermal Impedance3PACKAGE OUTLINE DIMENSIONS in inches (millimeters)4。
DK5V 100R20ST1同步整流芯片说明书
高性能两个引脚同步整流芯片产品概述DK5V100R20ST1是一款简单高效率的同步整流芯片,只有A,K两个功能引脚,分别对应肖特基二极管PN管脚。
芯片内部集成了100V功率NMOS管,可以大幅降低二极管导通损耗,提高整机效率,取代或替换目前市场上等规的肖特基整流二级管。
DK5V100R20ST1采用TO-220F封装。
主要特点●适用于反激PSR、SSR应用●超低V F●超低温升●集成100V 20mΩ功率NMOS●可工作于CCM、DCM&QR模式●自供电技术,无需外围供电●智能检测系统,无需前端同步信号●对EMI/C 有适当改善●可以直接替换肖特基二极管●无需任何外围典型应用●USB充电器●适配器●LED驱动等引出端排列引出端功能管脚序号管脚名称描述1 NC 悬空2 K 应用时同二极管阴极3 A 应用时同二极管阳极电路结构方框图极限参数参数符号最小值典型值最大值单位NMOS源漏耐压V(BR)DSS100 V TO220耗散功率P DMAX33 W 热阻(结到环境)RθJA62.5 ℃/W 热阻(结到管壳)RθJC 3.8 ℃/W 工作表面温度范围T J-25 120 ℃储存温度范围T STG-55 155 ℃结温T J-25 150 ℃焊接温度260/5S ℃电特性参数(T A = 25℃除非有其他说明)参数符号测试条件最小值典型值最大值单位电源电压芯片启动电压①V CC_ON7.2 V 欠压保护阈值①V CC_OFF 3.3 V 过压保护阈值①V OVP10 V 智能检测&控制NMOS开通电压V ON K点为参考电压-220 mV NMOS开通延时T DON150 ns NMOS关断延时T DOFF50 ns NMOS最大开通时间T ON_MAX20 μs NMOS最小开通时间T ON_MIN200 ns NMOS最小关断时间T OFF_MIN500 ns 死区时间②T D400 ns 最大工作频率F S_MAX150 KHz NMOSNMOS导通电阻R DS_ON20 mΩ备注:①.规格书中电压均以A点为参考点;②.同步整流芯片会依据K点波动自动调整死区时间;功能描述DK5V100R20ST1是一款简单高效的两个管脚的同步整流芯片,无需任何外围,可以大幅降低传统肖特基二极管的导通损耗,提高整机效率。
VDZ30B二极管规格书
5.0
60
0.5 0.5 6.0
5.0
60
0.5 0.1 7.0
5.0
60
0.5 0.1 8.0
5.0
80
0.5 0.1 9.0
5.0
80
0.5 0.1 10.0
5.0
80
0.5 0.1 11.0
5.0
80
0.5 0.1 12.0
2.0
80
0.5 0.1 13.0
2.0
100
0.5 0.1 15.0
全符合要求,也不承诺一定按期交出。
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Electrical Characteristics (Ta= 25°C unless otherwise specified)
Type Number
VDZ3.6B VDZ3.9B VDZ4.3B VDZ4.7B VDZ5.1B VDZ5.6B VDZ6.2B VDZ6.8B VDZ7.5B VDZ8.2B VDZ9.1B VDZ10B VDZ11B VDZ12B VDZ13B VDZ15B VDZ16B VDZ18B VDZ20B VDZ22B VDZ24B VDZ27B VDZ30B VDZ33B VDZ36B
S1贴片二极管规格书(常州星海)
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037) .135(.005) .127(.004)
500 10 See Note1 400
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
Pd.POWER DISSIPATION (mW)
IF,FORWARD CURRENT(mA)
A B C 1.0
300
200
0.1
100
0 0
0.01 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0
CT, TOTAL CAPACITANCE(pF)
TA=125 C
IR,REVERSE CURRENT(uA)
1
C
B A
TA=75 C 0.1
1
TA=25 C 0.01
TA=0 C 0.001 TA=-65 C
0 0 10 20 30 40 50
0.0001 0
10
20
30
40
50
60
VR REVERSE VOLTAGE.(V)
TA,AMBIENT TEMPERATURE( C)
Байду номын сангаас
VF FORWARD VOLTAGE(V)
FIG.3- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE
2 10 Tj=25 C f=1MHz
TVS二极管1.5SMC-1500W系列规格书 JKSEMI
DESCRIPTION:TVS diodes can be used in a wide range of applications which like consumer electronic products,automotive industries,munitions,telecommunications,aerospace industries,and intelligent control systems.FEATURES:✧Glass passivated or planar junction.✧Excellent clamping capability.✧Repetition rate (duty cycle):0.01%.✧Typical I R less than 1μA above 10V.✧Low profile package and low inductance.✧1500W Peak Pulse power capability at 10×1000μs waveform.✧Fast response time:typically less than 1.0ps from 0V to V BR min.✧High temperature soldering:260℃/10s at terminals.✧Plastic package has Underwriters Laboratory Flammability 94V-0.✧For surface mounted applications in order to optimize board space.ABSOLUTE MAXIMUM RATINGS (T A =25ºC,RH=45%-75%,unless otherwise noted)ParameterSymbol Value Unit Storage temperature rangeT stg -55to +150℃Operating junction temperature range T j -55to +150℃Steady state power dissipation at T L =75℃P M(AV)8.0W Peak pulse power dissipation on 10/1000μs waveformP PP 1500W Maximum Instantaneous Forward Voltage at 60A for UnidirectionalV F5.0VMARKING6V8A :Device Marking Code 1409:In ninth week,20146V8A1409SMCCHARACTERISTICS(T A=25℃) Part Number Marking V R I R@V R V BR@I T I TV C@I PPI PP①Uni-polar Bi-polar Uni Bi(V)μA min(V)max(V)mA V A 1.5SMC6.8A 1.5SMC6.8CA6V8A6V8C 5.8150 6.457.141010.5144.8 1.5SMC7.5A 1.5SMC7.5CA7V5A7V5C 6.41007.137.881011.3132.8 1.5SMC8.2A 1.5SMC8.2CA8V2A8V2C7.02507.798.611012.1124.0 1.5SMC9.1A 1.5SMC9.1CA9V1A9V1C7.78208.659.55113.4112.0 1.5SMC10A 1.5SMC10CA10A10C8.55109.5010.50114.5103.5 1.5SMC11A 1.5SMC11CA11A11C9.4510.5011.60115.696.2 1.5SMC12A 1.5SMC12CA12A12C10.2211.4012.60116.789.8 1.5SMC13A 1.5SMC13CA13A13C11.1112.4013.70118.282.5 1.5SMC15A 1.5SMC15CA15A15C12.8114.3015.80121.270.8 1.5SMC16A 1.5SMC16CA16A16C13.6115.2016.80122.566.7 1.5SMC18A 1.5SMC18CA18A18C15.3117.1018.90125.259.6 1.5SMC20A 1.5SMC20CA20A20C17.1119.0021.00127.754.2 1.5SMC22A 1.5SMC22CA22A22C18.8120.9023.10130.649.1 1.5SMC24A 1.5SMC24CA24A24C20.5122.8025.20133.245.2 1.5SMC27A 1.5SMC27CA27A27C23.1125.7028.40137.540.0 1.5SMC30A 1.5SMC30CA30A30C25.6128.5031.50141.436.3 1.5SMC33A 1.5SMC33CA33A33C28.2131.4034.70145.732.9 1.5SMC36A 1.5SMC36CA36A36C30.8134.2037.80149.930.1 1.5SMC39A 1.5SMC39CA39A39C33.3137.1041.00153.927.9 1.5SMC43A 1.5SMC43CA43A43C36.8140.9045.20159.325.3 1.5SMC47A 1.5SMC47CA47A47C40.2144.7049.40164.823.2 1.5SMC51A 1.5SMC51CA51A51C43.6148.5053.60170.121.4 1.5SMC56A 1.5SMC56CA56A56C47.8153.2058.80177.019.5 1.5SMC62A 1.5SMC62CA62A62C53.0158.9065.10185.017.7 1.5SMC68A 1.5SMC68CA68A68C58.1164.6071.40192.016.4 1.5SMC75A 1.5SMC75CA75A75C64.1171.3078.801103.014.6 1.5SMC82A 1.5SMC82CA82A82C70.1177.9086.101113.013.3 1.5SMC91A 1.5SMC91CA91A91C77.8186.5095.501125.012.0 1.5SMC100A 1.5SMC100CA100A100C85.5195.00105.01137.011.0CHARACTERISTICS (T A =25℃,continued)Part Number Marking V R I R @V R V BR @I T I T V C @I PP I PP ①Uni-PolarBi-PolarUniBiVμAmin(V)max(V)mAVA1.5SMC110A 1.5SMC110CA 110A 110C 94.01105.0116.01152.010.01.5SMC120A 1.5SMC120CA 120A 120C 1021114.0126.01165.09.11.5SMC130A 1.5SMC130CA 130A 130C 1111124.0137.01179.08.41.5SMC150A 1.5SMC150CA 150A 150C 1281143.0158.01207.07.31.5SMC160A 1.5SMC160CA 160A 160C 1361152.0168.01219.0 6.91.5SMC170A 1.5SMC170CA 170A 170C 1451162.0179.01234.0 6.51.5SMC180A 1.5SMC180CA 180A 180C 1541171.0189.01246.0 6.11.5SMC200A 1.5SMC200CA 200A 200C 1711190.0210.01274.05.51.5SMC220A 1.5SMC220CA 220A 220C 1851209.0231.01328.0 4.61.5SMC250A 1.5SMC250CA 250A 250C 2141237.0263.01344.0 4.41.5SMC300A 1.5SMC300CA 300A 300C 2561285.0315.01414.0 3.71.5SMC350A 1.5SMC350CA 350A 350C 3001332.0368.01482.0 3.21.5SMC400A 1.5SMC400CA 400A 400C 3421380.0420.01548.0 2.81.5SMC440A 1.5SMC440CA440A440C3761418.0462.01602.02.5①Surgewaveform:10/1000μsV R :Stand-off Voltage --Maximum voltage that can be applied V BR :Breakdown VoltageV C :Clamping Voltage --Peak voltage measured across the suppressor at a specified Ipp I R :Reverse Leakage Current100kINFORMATIONAND V‐I CHARACTERISTICS CURVES(T A=25ºC,unless otherwise noted)FIG.1:V-I curve characteristics(Uni-directional)FIG.2:V-I curve characteristicsFIG.3:Pulse waveform PPM RSMFIG.4:Pulse derating curveV BR VoltageC:Bi-directionalA5%V BR Voltage toleranceCxx1.5SMC 1500W SMC SeriesPeaPARAMETERS Reflow Condition Pb-Free assembly (see FIG.5)Pre Heat -Temperature Min(T s(min))+150℃-Temperature Max(T s(max))+200℃-Time(Min to Max)(ts)60-180secs.Average ramp up rate(Liquid us Temp(T L)to peak)3℃/sec.Max T s(max)to T L-Ramp-up Rate3℃/sec.MaxReflow -Temperature(T L)(Liquid us)+217℃-Temperature(t L)60-150secs.Peak Temp(T p)+260(+0/-5)℃Time within5℃of actual Peak Temp(t p)30secs.Max Ramp-down Rate6℃/sec.Max x Time25℃to Peak Temp(T P)8min.Max Do not exceed+260℃MECHANICAL DATADO-214AB(SMC)PreheatRamp-upRef.Dimensions Millimeters Inches Min.Max.Min.Max.A 6.607.110.2600.280B 5.59 6.200.2200.244C 2.75 3.200.1080.126 D0.76 1.520.0300.060 E7.748.130.3050.320 F0.0510.2030.0020.008 G0.150.310.0060.012 H 2.15 2.620.0850.103 J8.120.320K 4.690.185 L 3.070.121Website:For additional information,please contact your local SalesRepresentative.©Copyright 2016,jksemiis a registered trademark of jksemi All rights arereservedAND PART No.PACKAGE QUANTITYTAPE &REEL1.5SMCxxCA/ASMC(DO214AB)3,00013inch。
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SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : S olderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end Mounting Position : Any
Weight :0.006 ounce, 0.02 grams
Glass passivated device
Ideal for surface mouted applications FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension
Low reverse leakage
Note: 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
ELECTRONICS CO.,LTD.
LING JIE
STAR SEA
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
DSR1A THRU DSR1M
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
1.Averaged over any 20ms period.
DSR1B SYMBOLS
10070100400280400200140200
600420600800560800
V RRM V RMS V DC I (AV)
I FSM V F 1.0
25.01.1Operating junction and storage temperature range
Maximum repetitive peak reverse voltage Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T A =65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C Typical junction capacitance (NOTE 2)I R 10.050.0R θJA C J T J ,T STG
1804-55 to +150
Typical thermal resistance (NOTE 3)
UNITS
VOLTS VOLTS VOLTS Amp
Amps Volts pF C
A µK/W DSR1D DSR1G DSR1J
DSR1K S1B
S1D
S1G
S1J
S1K
T L =25 C
503550S1A
DSR1A 10007001000
DSR1M S1M
SOD-123FL
Dimensions in millimeters
RATINGS AND CHARACTERISTIC CURVES DSR1A THRU DSR1M
ELECTRONICS CO.,LTD.
LING JIE
STAR SEA
m A M P E R E S
C A P A C I T A N C E , p F
FIG.1 --TY PIC A L FOR WA R D C H A R A C TE R ISTIC FIG.2 -- TY PIC A L JU N C TION C APA C ITA N C E
IN ST AN T AN EO U S FOR WAR D VOLT AG E,mV R EVER SE VOLT AGE,VOLT S
I N S T A N T A N E O U S F O R W A R D C U R R E N T
100
1000
600
70080090010001100
5
10
15
20
25
30
35
40
10
9876543210 µA M P E R E S
A V E R A G E F O R W A R D C U R R E N T ,A M P E R E S
I N S T A N T A N E O U S R E V E R S E C U R R E N T
FIG.3 -- TYPICAL INSTANTANEOUS FIG.4 -- FOR WA R D D E R A TIN G C U R VE
AMBIEN T T EMPER AT U R E,
INSTANTANEOUS REVERSE VOLTAGE,V
10
100
REVERSE CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0 25 50 75 100 125 150 175
【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板
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