威世二极管规格书

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VISHAY TVS和ESD保护说明书

Tr a n s Z o r b®雪崩T V S PA R®汽车T V S特殊功能瞬态电压抑制器E S D保护器件Vishay 的TransZorb®瞬态电压抑制器（TVS ）采用了目前最先进的技术，可提供业界最大的电压范围。

此设计允许雪崩击穿二极管TVS 在较短时间内吸收大量能量而不被损坏。

Vishay 的TransZorb TVS 没有耗损机制，具有足够快的导通时间和极佳的箝位特性。

TransZorb ® 雪崩 TVS注解：(1) 利用10/1000 μs 脉冲进行测量(2) 部件编号中，"xx" 代表V WM ， "nn" 代表标称电压(3) 部件编号中"nn"表示标称电压，"xx"或（m ）脚注表示最低电压。

目前正在计划实现更高的电压指标（可达600 V ）。

请与当地销售商联系确定产品信息(4) 双向极性用后缀"C"或"CA"来表示（BZW04使用后缀"B"）(5) 大部分TVS 产品取得了UL 标准497B 下保护器类别（QVGQ2）的认证，且单向和双向器件都采用文件号E136766。

具体信息请参考各自的数据手册。

瞬态电压抑制器Vishay 的汽车瞬态电压抑制器（TVS ）利用了PAR®专利技术，相比于其他雪崩TVS 二极管，其可在更大的温度范围内（可达185 oC ）表现出极佳的稳定性和功率处理能力。

本产品组合包含了专门用于负载突降浪涌保护的器件，封装类型有轴向和表面贴装两种。

注解：(1) 利用10/1000 μs 脉冲进行测量(2) 部件编号中，"xx" 代表V WM ， "nn" 代表标称电压(3) 部件编号中”nn ”表示标称电压，”xx ”表示最小电压 (5) 所有汽车TVS 都仅为单向极性(6) 所有汽车TVS 都利用PAR 专利工艺技术实现优越的高温性能(7) 大部分TVS 产品取得了UL 标准497B 下保护器类别（QVGQ2）的认证，且单向和双向器件都采用文件号E136766。

SD103CWS贴片肖特基二极管规格书

.72(0.028) .69(0.027)
.08(.003) MIN
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Mounting Position: Any Marking: SD103AWS:S4, SD103BWS:S5, SD103CWS:S6
【领先的片式无源器件整合供应商 — 南京南山半导体有限公司】

SD103AWS-SD103CWS
SCHOTTKY DIODES
SOD-323
1.35(0.053) 1.15(0.045) 1.26(.050) 1.24(.048)
FEATURES
Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time low reverse capacitance
SYMBOLS SYMBOLS
SD103AWS 40 28
SD103BWS 30 21 350 1.5 200 300 -65 to +125
SD103CWS 20 14
UNITS VOLTS V mA A mW /W
VRRM VRMS VDC VR(RMS) IFM IFRM Pd RΘJA TSTG
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

VISHAY威世薄膜电阻器规格书

Thick Film High Value Chip Resistors
TYPE
WATTS AT
70°C
T.C. ppm/°C
CRCW0201
0.050
D10/CRCW0402
0.063
D11/CRCW0603
0.100
D12/CRCW0805
0.125
D25/CRCW1206
0.250
CRCW1210
1.55
0.45
10-30...0 20
0.47-10M
1.250
2.00
0.45
10-30...0 20
0.47-10M
1.600
3.20
0.55
15+15 15
10-4.7M
2.500
3.20
0.55
15+15 15
10-4.7M
2.500
5.00
0.60
15+15 15
10-4.7M
3.150
Sulfur Resistant
RCA0603
Excellent stability in critical
environmental conditions
RCA0805
Zero ohm available on all sizes
RCA1206
RCA1210
RCA1218
RCA2010
Thick Film Chip Resistors
1.270
1.270
0.254
1
20
100-1M
1.270
1.900
0.381
1
20
100-1M

DSR1M二极管规格书(常州星海)

SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERReverse Voltage - 50 to 1000 Volts Forward Current - 1.0 AmpereCase : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : S olderable per MIL-STD-750,Method 2026Polarity : Color band denotes cathode end Mounting Position : AnyWeight :0.006 ounce, 0.02 gramsGlass passivated deviceIdeal for surface mouted applications FEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSMetallurgically bonded constructionHigh temperature soldering guaranteed:250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tensionLow reverse leakageNote: 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mountedELECTRONICS CO.,LTD.LING JIESTAR SEARatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.DSR1A THRU DSR1M2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.1.Averaged over any 20ms period.DSR1B SYMBOLS10070100400280400200140200600420600800560800V RRM V RMS V DC I (AV)I FSM V F 1.025.01.1Operating junction and storage temperature rangeMaximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current at T A =65 C (NOTE 1)Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C Typical junction capacitance (NOTE 2)I R 10.050.0R θJA C J T J ,T STG1804-55 to +150Typical thermal resistance (NOTE 3)UNITSVOLTS VOLTS VOLTS AmpAmps Volts pF CA µK/W DSR1D DSR1G DSR1JDSR1K S1BS1DS1GS1JS1KT L =25 C503550S1ADSR1A 10007001000DSR1M S1MSOD-123FLDimensions in millimetersRATINGS AND CHARACTERISTIC CURVES DSR1A THRU DSR1MELECTRONICS CO.,LTD.LING JIESTAR SEAm A M P E R E SC A P A C I T A N C E , p FFIG.1 --TY PIC A L FOR WA R D C H A R A C TE R ISTIC FIG.2 -- TY PIC A L JU N C TION C APA C ITA N C EIN ST AN T AN EO U S FOR WAR D VOLT AG E,mV R EVER SE VOLT AGE,VOLT SI N S T A N T A N E O U S F O R W A R D C U R R E N T100100060070080090010001100510152025303540109876543210 µA M P E R E SA V E R A G E F O R W A R D C U R R E N T ,A M P E R E SI N S T A N T A N E O U S R E V E R S E C U R R E N TFIG.3 -- TYPICAL INSTANTANEOUS FIG.4 -- FOR WA R D D E R A TIN G C U R VEAMBIEN T T EMPER AT U R E,INSTANTANEOUS REVERSE VOLTAGE,V10100REVERSE CHARACTERISTICS1.00.80.60.40.20 25 50 75 100 125 150 175【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板第2页共2页。

BAT760 二极管规格书DATASHEET

Type number Package Description
BAT760
SOD323 4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-115
-135
[1] For further information and the availability of packing methods, see Section 13.
1.4 Quick reference data
Table 1. Symbol VR IF VF
Quick reference data Parameter reverse voltage forward current forward voltage
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
11. Revision history
Table 9. Revision history
Document ID
Release date
Data sheet status Change notice
Supersedes
BAT760_3 Modiﬁcations:
20081017
Product data sheet -
Marking code A4
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
103
102

vishay bpw34, bpw34s 硅平面型光电二极管说明书

Silicon PIN PhotodiodeDESCRIPTIONBPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation.BPW34S is packed in tubes, specifications like BPW34.FEATURES•Package type: leaded •Package form: top view•Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2•Radiant sensitive area (in mm 2): 7.5 •High photo sensitivity •High radiant sensitivity•Suitable for visible and near infrared radiation •Fast response times•Angle of half sensitivity: ϕ = ± 65°•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/ECNote**Please see document “Vishay Material Category Policy”:/doc?99902APPLICATIONS•High speed photo detectorNote•Test condition see table “Basic Characteristics”Note•MOQ: minimum order quantity94 8583PRODUCT SUMMARYCOMPONENT I ra (μA)ϕ (deg)λ0.1 (nm)BPW3450± 65430 to 1100BPW34S50± 65430 to 1100ORDERING INFORMATIONORDERING CODE PACKAGINGREMARKSPACKAGE FORMBPW34Bulk MOQ: 3000 pcs, 3000 pcs/bulk Top view BPW34STubeMOQ: 1800 pcs, 45 pcs/tubeTop viewABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLVALUE UNIT Reverse voltage V R 60V Power dissipation T amb ≤ 25 °C P V 215mW Junction temperature T j 100°C Operating temperature range T amb - 40 to + 100°C Storage temperature range T stg - 40 to + 100°C Soldering temperaturet ≤ 3 sT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2R thJA350K/WBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient TemperatureBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN.TYP.MAX.UNIT Breakdown voltage I R = 100 μA, E = 0V (BR)60V Reverse dark current V R = 10 V, E = 0I ro 230nA Diode capacitance V R = 0 V, f = 1 MHz, E = 0C D 70pF V R = 3 V, f = 1 MHz, E = 0C D 2540pF Open circuit voltageE e = 1 mW/cm 2, λ = 950 nm V o 350mV Temperature coefficient of V o E e = 1 mW/cm 2, λ = 950 nmTK Vo - 2.6mV/K Short circuit currentE A = 1 klxI k 70μA E e = 1 mW/cm 2, λ = 950 nm I k 47μA Temperature coefficient of I k E e = 1 mW/cm 2, λ = 950 nmTK Ik 0.1%/K Reverse light current E A = 1 klx, V R = 5 V I ra 75μA E e = 1 mW/cm 2, λ = 950 nm,V R = 5 VI ra4050μA Angle of half sensitivity ϕ± 65deg Wavelength of peak sensitivity λp 900nm Range of spectral bandwidth λ0.1430 to 1100nm Noise equivalent power V R = 10 V, λ = 950 nm NEP4 x 10-14W/√Hz Rise time V R = 10 V, R L = 1 k Ω, λ = 820 nm t r 100ns Fall timeV R = 10 V, R L = 1 k Ω, λ = 820 nmt f100nsFig. 3 - Reverse Light Current vs. IrradianceFig. 4 - Reverse Light Current vs. Illuminance Fig. 5 - Reverse Light Current vs. Reverse VoltageFig. 6 - Diode Capacitance vs. Reverse VoltageFig. 7 - Relative Spectral Sensitivity vs. WavelengthFig. 8 - Relative Radiant Sensitivity vs. Angular DisplacementPACKAGE DIMENSIONS in millimetersTUBE PACKAGING DIMENSIONS in millimetersFig. 9 - Drawing Proportions not scaled 18800Stopper10.79.5214.5Q u antity per t ub e: 45 pcsQ u antity per b ox: 1800 pcsLegal Disclaimer Notice VishayDisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.V ishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein.Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED。

DZ23C33贴片二极管规格书

RθJA
417
Operating and Storage Temperature Range
Tj,TSTG
-65~ +150
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
Unit V
mW ℃/W
A,Jun,2011
【南京南山—领先的片式无源器件整合供应商】

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SL贴片二极管规格书

B5817W THRU B5819WSCHOTTKY DIODECase : Molded plastic bodyTerminals : Plated leads solderable per MIL-STD-750, Method 2026Polarity : Polarity symbols marked on caseMarking : B5817W:SJ, B5818W:SK, B5819W:SLFEATURESMECHANICAL DATAFor use in low voltage, high frequency inverters Free wheeling, and polanty protection applicationsElectrical ratings @T A =25C SYMBOLSTest conditions V (BR)Reverse breakdown voltageReverse voltage leakage currentForward voltageDiode capacitance PARAMETERMin.Max.Unit V V VI R =1mA 0.450.750.550.8750.60.9120191.5250500-65 to +15030Maximum ratings and electrical characteristics, Single diode @T A =25C SYMBOLSUNITS V RRM V RWM V R Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltageAverage rectified output currentPeak forward surge current @=8.3ms Repetitive peak forward current Power dissipationThermal resistance junction to ambient Storage temperatureNon-Repetitive peak reverse voltage T STG V RMV V A A A mW K/W C VB5818W3021V R(RMS)I O Pd PARAMETERI FSM R ΘJA I R203040pFI FRM B5817WB5819W 204014282040C D V F1mAV V VV R =4V,f=1.0MHzB5817W B5818W B5819W V R =20V V R =30V V R =40VB5817W B5818W B5819W I F =1A I F =3AB5817WB5818W B5819WSOD-123Dimensions in millimeters and (inches)RATINGS AND CHARACTERISTIC CURVES B5817W THRU B5819W0 10 100NUMBER OF CYCLES AT 60HzFIG. 2-MAXIMUM NON-REPETITIVE PEAKFORWARD SURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D C U R R E N T (A )10.89.07.25.43.61.8CASE TEMPERATURE( C )P E A K F O R W A R D S U R G E C U R R E N T (A )0 20 40 60 80 100 120 140FIG. 3- TYPICAL INSTANTANEOUSI NS T A N T A N E OU S F O R W A R D C U R R E N T (A )0 0.4 0.8 1.2 1.6INSTANTANEOUS FORWARD VOLTAGE(V)FIG. 4- TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )0 20 40 60 80 100100101.00.10.010.001PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)FIG. 5- TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E (p F )REVERSE VOLTAGE (V)400100100.1 1 10 1000.01 1 10 1001001010.1T R A N S I E N T T H E R M A L I M P E D A N C E ( C /W )FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCEt--PULSE DURATION (sec.)【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板。

1N4007WS二极管规格书

600 420 600
800 560 800
1000 700 1000
VOLTS VOLTS VOLTS Amps
IFSM VF IR RθJA Trr CJ
25 1.1 5.0 50.0 55 1800 5 -55 to +150
Amps Volts µA C/W Ns resistance (NOTE 1) Typical reverse recovery time (NOTE 2) Typical junction capacitance (NOTE 3)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A)
40 35 30 25 20 15 10 5 00 1 10 100
8.3 ms Single Half Sine Wave (JEDEC Method)
Operating junction and storage temperature range TJ,TSTG NOTE
（1）P.C.B. mounted with 0.2" X 0.2" (5 X 5 mm) copper pad areas. （2）Measured with I F =0.5A,I R =1A , I rr = 0.25A （3）Measured at 1 MHz and applied reverse voltage of 4 V D.C
MDD Catalog Number
Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=125 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage TA=25 C TA=100 C

肖特基二极管规格书

以下是一个典型的肖特基二极管规格书包含的信息：
产品名称和型号：如1N5817等。

电气特性：
正向电压（VF）：指二极管在正向工作时的电压，通常在0.2至1.5伏之间。

反向电压（VR）：指二极管在反向工作时的最大电压，通常在20至200伏之间。

正向电流（IF）：指二极管在正向工作时的最大电流，通常在1至10安培之间。

反向漏电流（IR）：指二极管在反向工作时的最大漏电流，通常在数微安至数毫安之间。

瞬态响应时间：指二极管在电压或电流瞬间变化时从低电平到高电平的响应时间，通常在数纳秒至数微秒之间。

封装类型：肖特基二极管常见的封装类型有DO-41、TO-220等。

温度特性：二极管的电气特性会受到温度的影响，因此规格书中会标明温度特性，如最大工作温度等。

应用范围：肖特基二极管常用于开关电源、电机驱动、逆变器等电路中，规格书中会标明适用的应用范围。

US1BL二极管规格书(常州星海)

SURFACE MOUNT HIGH EFFICIENCY RECTIFIERReverse Voltage - 50 to 1000 Volts Forward Current - 1.0 AmpereCase : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : Plated axial leads, solderable per MIL-STD-750,Method 2026Polarity : Color band denotes cathode end Mounting Position : AnyWeight :0.0007 ounce, 0.02 gramsGlass passivated deviceIdeal for surface mouted applications FEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSUS1BL SYMBOLSUNITSMetallurgically bonded constructionHigh temperature soldering guaranteed:260 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tensionLow reverse leakage10070100400280400600420600VOLTS VOLTS VOLTS AmpAmps Volts V RRM V RMS V DC I (AV)I FSM V F 1.025.01.4Maximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C I R 5.0100.0AµRatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.US1AL THRU US1MLUS1DLUS1GL US1JL US1ML UBUDUGUJUMUKUS1KL Maximum reverse recovery time (NOTE 1)ELECTRONICS CO.,LTD.STAR SEANote:Operating junction and storage temperature range R θJA T J ,T STG 180-55 to +150CTypical thermal resistance K/W 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.50ns 503550UAUS1AL trr2001402008005608001.01.71000700100075SOD-123FLDimensions in millimetersRATINGS AND CHARACTERISTIC CURVES US1AL THRU US1MLELECTRONICS CO.,LTD.LING JIESTAR SEA1.00.80.60.40.20 25 50 75 100 125 150 1750.2 0.6 1.0 1.4 1.8 2.0FIG. 3-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSFIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E SI N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E SP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTS1001010.10.01PERCENT OF PEAK REVERSE VOLTAGE,%FIG. 4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I C R O A M P E R E SAMBIENT TEMPERATURE, CNUMBER OF CYCLES AT 60 Hz【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板第2页共2页。

vishay 02_威世二极管及功率模块产品介绍及应用_Tony魏武

How to evaluate rectifier safe thermal operation
Diode chip manufacturing process is higher than 800oC. Diode soldering (>280oC) , but molding compound (>185oC) can not stand high temperature. Key point in diode applications are the heat dissipation. It needs to keep diode Tj stable under Tj-max definition in datasheet. If diode damaged by thermal problem, the damaged temperature is higher than 175oC. If rectifier chip burns out, Tj>800oC. It is very difficult to measure Tj directly to know the safe design margin in different application. Suggest to add (3oC+Ta-max) and to set 105% ~ 120% rating current to do on/off and short circuit test. It can evaluate all components stress at the same time.
RF Diodes ESD/EMI TVS Bridge Schottky
Rectifier

威世 80EBU02 超快软恢复二极管说明书

1Case StylesPow IR tab80EBU02Bulletin PD-20740 rev. B 02/06t rr = 35nsI F(AV) = 80Amp V R = 200VDescription/ ApplicationsAbsolute Maximum RatingsUltrafast Soft Recovery DiodeV R Cathode to Anode Voltage200V I F(AV)Continuous Forward Current, T C = 112°C 80AI FSM Single Pulse Forward Current, T C = 25°C 800I FRM Maximum Repetitive Forward Current 160T J , T STGOperating Junction and Storage Temperatures- 55 to 175°CParametersMaxUnitsThese diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems.The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.Square Wave, 20kHzFeatures• Ultrafast Recovery• 175°C Operating Junction Temperature • Screw Mounting Only • Lead-Free PlatingBenefits•Reduced RFI and EMI•Higher Frequency Operation •Reduced Snubbing •Reduced Parts Count 80EBU02Bulletin PD-20740 rev. B 02/06V BR , V r Breakdown Voltage,200--V I R = 50µA Blocking Voltage V FForward Voltage-0.98 1.13V I F = 80A-0.790.92V I F = 80A, T J = 175°C I R Reverse Leakage Current --50µA V R = V R Rated--2mA T J = 150°C, V R = V R Rated C T Junction Capacitance -89-pF V R = 200VL SSeries Inductance-3.5-nHMeasured lead to lead 5mm from package bodyElectrical Characteristics @ T J = 25°C (unless otherwise specified)ParametersMin Typ Max Units Test Conditionst rrReverse Recovery Time--35ns I F = 1.0A, di F /dt = 200A/µs, V R = 30V -32-T J = 25°C -52-T J = 125°CI RRM Peak Recovery Current - 4.4-A T J = 25°C -8.8-T J = 125°CQ rr Reverse Recovery Charge -70-nC T J = 25°C-240-T J = 125°CDynamic Recovery Characteristics @ T J = 25°C (unless otherwise specified)I F = 80A V R = 160Vdi F /dt = 200A/µsParametersMin TypMaxUnitsR thJC Thermal Resistance, Junction to Case 0.70K/WR thCS Thermal Resistance, Case to Heatsink 0.2WtWeight5.02g 0.18(oz)TMounting Torque1.22.4N * m 1020lbf.inThermal - Mechanical CharacteristicsMounting Surface, Flat, Smooth and GreasedParametersMin Typ Max Units Test Conditions380EBU0280EBU02580EBU02233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7309Visit us at for sales contact information. 02/06 。

威世数字电阻二极管(BRT) DTC123E D 使用手册说明书

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 k W , R2 = 2.2 k WNPN Transistors with Monolithic Bias Resistor NetworkThis series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.Features•Simplifies Circuit Design •Reduces Board Space•Reduces Component Count•NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS (T A = 25°C)RatingSymbol Max Unit Collector−Base Voltage V CBO 50Vdc Collector−Emitter Voltage V CEO 50Vdc Collector Current − Continuous I C100mAdcInput Forward Voltage V IN(fwd)12Vdc Input Reverse VoltageV IN(rev)10VdcStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.PIN 3(OUTPUT)PIN 2EMITTER (GROUND)PIN 1BASE ORDERING INFORMATIONPIN CONNECTIONSSC−75CASE 463STYLE 1MARKING DIAGRAMSXXX =Specific Device Code M =Date Code*G=Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary depending up-on manufacturing location.SC−59CASE 318DSTYLE 1SOT−23CASE 318STYLE 6SC−70/SOT−323CASE 419STYLE 3SOT−723CASE 631AA STYLE 1SOT−1123CASE 524AA STYLE 1XX M G G 11XXX M GG XX M G G 1XX M 1X M 1Table 1. ORDERING INFORMATIONDevicePart MarkingPackage Shipping †MUN2231T1G8H SC−59(Pb−Free)3000 / Tape & Reel MMUN2231LT1G, NSVMMUN2231LT1G*A8H SOT−23(Pb−Free)3000 / Tape & Reel MUN5231T1G 8H SC−70/SOT−323(Pb−Free)3000 / Tape & Reel DTC123EET1G8H SC−75(Pb−Free)3000 / Tape & Reel DTC123EM3T5G, NSVDTC123EM3T5G*8H SOT−723(Pb−Free)8000 / Tape & Reel NSBC123EF3T5GE (180°)**SOT−1123(Pb−Free)8000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.** (xx °) = Degree rotation in the clockwise direction.Figure 1. Derating CurveAMBIENT TEMPERATURE (°C)P D , P O W E R D I S S I P A T I O N (m W )(1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad(4) SOT−1123; 100 mm 2, 1 oz. copper trace (5) SOT−723; Minimum PadTHERMAL CHARACTERISTICS (SC−59) (MUN2231)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2303381.82.7mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA540370°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL264287°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SOT−23) (MMUN2231L)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2464002.03.2mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA508311°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL174208°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5231)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2023101.62.5mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA618403°C/WThermal Resistance,(Note 1) Junction to Lead(Note 2)R q JL280332°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SC−75) (DTC123EE)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2003001.62.4mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA600400°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C THERMAL CHARACTERISTICS (SOT−723) (DTC123EM3)Total Device DissipationT A = 25°C(Note 1)(Note 2) Derate above 25°C(Note 1)(Note 2)P D2606002.04.8mWmW/°CThermal Resistance,(Note 1) Junction to Ambient(Note 2)R q JA480205°C/WJunction and Storage Temperature Range T J, T stg−55 to +150°C1.FR−4 @ Minimum Pad.2.FR−*******.0InchPad.3.FR−4 @ 100 mm2, 1 oz. copper traces, still air.4.FR−4 @ 500 mm2, 1 oz. copper traces, still air.THERMAL CHARACTERISTICS (SOT−1123) (NSBC123EF3)Total Device DissipationT A = 25°C(Note 3)(Note 4) Derate above 25°C(Note 3)(Note 4)P D2542972.02.4mWmW/°CThermal Resistance,(Note 3) Junction to Ambient(Note 4)R q JA493421°C/WThermal Resistance, Junction to Lead(Note 3)R q JL193°C/W Junction and Storage Temperature Range T J, T stg−55 to +150°C1.FR−4 @ Minimum Pad.2.FR−*******.0InchPad.3.FR−4 @ 100 mm2, 1 oz. copper traces, still air.4.FR−4 @ 500 mm2, 1 oz. copper traces, still air.Table 3. ELECTRICAL CHARACTERISTICS (T A = 25°C, unless otherwise noted)Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICSCollector−Base Cutoff Current (V CB = 50 V, I E = 0)I CBO−−100nAdcCollector−Emitter Cutoff Current (V CE = 50 V, I B = 0)I CEO−−500nAdcEmitter−Base Cutoff Current (V EB = 6.0 V, I C = 0)I EBO−− 2.3mAdcCollector−Base Breakdown Voltage (I C = 10 m A, I E = 0)V(BR)CBO50−−VdcCollector−Emitter Breakdown Voltage (Note 5) (I C = 2.0 mA, I B = 0)V(BR)CEO50−−VdcON CHARACTERISTICSDC Current Gain (Note 5) (I C = 5.0 mA, V CE = 10 V)h FE8.015−Collector−Emitter Saturation Voltage (Note 5) (I C = 10 mA, I B = 5.0 mA)V CE(sat)−−0.25VdcInput Voltage (off)(V CE = 5.0 V, I C = 100 m A)V i(off)− 1.20.5VdcInput Voltage (on)(V CE = 0.3 V, I C = 20 mA)V i(on)2.0 1.7−VdcOutput Voltage (on)(V CC = 5.0 V, V B = 2.5 V, R L = 1.0 k W)V OL−−0.2VdcOutput Voltage (off)(V CC = 5.0 V, V B = 0.25 V, R L = 1.0 k W)V OH4.9−−VdcInput Resistor R1 1.5 2.2 2.9k W Resistor Ratio R1/R20.8 1.0 1.2Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.5.Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.TYPICAL CHARACTERISTICSMUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3Figure 2. V CE(sat) vs. I CFigure 3. DC Current GainI C , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)Figure 4. Output CapacitanceFigure 5. Output Current vs. Input VoltageV R , REVERSE VOLTAGE (V)V in , INPUT VOLTAGE (V)0.1110100Figure 6. Input Voltage vs. Output CurrentI C , COLLECTOR CURRENT (mA)V C E (s a t ), C O L L E C T O R −E M I T T E R V O L T A G E (V )h F E , D C C U R R E N T G A I NC o b , O U T P U T C A P A C I T A N C E (p F )I C , C O L L E C T O R C U R R E N T (m A )V i n , I N P U T V O L T A G E (V )SOT −23 (TO −236)CASE 318−08ISSUE ASDATE 30 JAN 2018SCALE 4:11XXXM G G XXX = Specific Device Code M = Date Code G = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.SOLDERING FOOTPRINTDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.000b 0.370.440.500.015c 0.080.140.200.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOM MAX L1STYLE 22:PIN 1.RETURN2.OUTPUT3.INPUT STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 7:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODESTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE STYLE 10:PIN 1.DRAIN2.SOURCE3.GATE STYLE 11:PIN 1.ANODE 2.CATHODE 3.CATHODE −ANODE STYLE 12:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 13:PIN 1.SOURCE2.DRAIN3.GATESTYLE 14:PIN 1.CATHODE2.GATE3.ANODESTYLE 15:PIN 1.GATE2.CATHODE3.ANODE STYLE 16:PIN 1.ANODE2.CATHODE3.CATHODE STYLE 17:PIN 1.NO CONNECTION2.ANODE3.CATHODE STYLE 18:PIN 1.NO CONNECTION 2.CATHODE 3.ANODE STYLE 19:PIN 1.CATHODE 2.ANODE 3.CATHODE −ANODE STYLE 23:PIN 1.ANODE2.ANODE3.CATHODESTYLE 20:PIN 1.CATHODE2.ANODE3.GATE STYLE 21:PIN 1.GATE2.SOURCE3.DRAIN STYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1.GATE2.DRAIN3.SOURCESTYLE 25:PIN 1.ANODE2.CATHODE3.GATESTYLE 26:PIN 1.CATHODE2.ANODE3.NO CONNECTIONSTYLE 27:PIN 1.CATHODE2.CATHODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°END VIEWDIMENSIONS: MILLIMETERS3X3XRECOMMENDED STYLE 28:PIN 1.ANODE2.ANODE3.ANODESC −59CASE 318D −04ISSUE HDATE 28 JUN 2012SCALE 2:1STYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 1:PIN 1.BASE2.EMITTER3.COLLECTORSTYLE 2:PIN 1.ANODE2.N.C.3.CATHODESTYLE 4:PIN 1.CATHODE2.N.C.3.ANODE STYLE 5:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 6:PIN 1.ANODE2.CATHODE3.ANODE/CATHODENOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.ǒmm inchesǓXXX M GG XXX = Specific Device Code M = Date CodeG= Pb −Free Package*GENERICMARKING DIAGRAM*This information is generic. Please refer todevice data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.1*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DIM A MIN NOM MAX MINMILLIMETERS1.00 1.15 1.300.039INCHES A10.010.060.100.001b 0.350.430.500.014c 0.090.140.180.003D2.70 2.903.100.106E 1.30 1.50 1.700.051e 1.70 1.90 2.100.067L 0.200.400.600.0082.502.803.000.0990.0450.0510.0020.0040.0170.0200.0050.0070.1140.1220.0590.0670.0750.0830.0160.0240.1100.118NOM MAX H E(*Note: Microdot may be in either location)SC −70 (SOT −323)CASE 419ISSUE PDATE 07 OCT 2021SCALE 4:1STYLE 3:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 2:PIN 1.ANODE2.N.C.3.CATHODE STYLE 1:CANCELLEDSTYLE 5:PIN 1.ANODE 2.ANODE 3.CATHODE STYLE 6:PIN 1.EMITTER 2.BASE3.COLLECTORSTYLE 7:PIN 1.BASE 2.EMITTER 3.COLLECTORSTYLE 8:PIN 1.GATE 2.SOURCE 3.DRAINSTYLE 9:PIN 1.ANODE 2.CATHODE3.CATHODE-ANODESTYLE 10:PIN 1.CATHODE 2.ANODE3.ANODE-CATHODEXX M G G XX = Specific Device Code M = Date CodeG= Pb −Free PackageGENERICMARKING DIAGRAM1STYLE 11:PIN 1.CATHODE2.CATHODE3.CATHODE*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “G ”, may or may not be present. Some products maynot follow the Generic Marking.SC −75/SOT −416CASE 463−01ISSUE GDATE 07 AUG 2015SCALE 4:1NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODE STYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 4:PIN 1.CATHODE2.CATHODE3.ANODEXX = Specific Device Code M = Date Code G = Pb −Free PackageSTYLE 5:PIN 1.GATE2.SOURCE3.DRAINDIM MIN NOM MAX MILLIMETERS A 0.700.800.90A10.000.050.10b C 0.100.150.25D 1.55 1.60 1.65E e 1.00 BSC 0.0270.0310.0350.0000.0020.0040.0040.0060.0100.0610.0630.0650.04 BSCMIN NOM MAX INCHES0.150.200.300.0060.0080.012*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*H EL 0.100.150.201.50 1.60 1.700.0040.0060.0080.0600.0630.0670.700.800.900.0270.0310.035ǒmm inchesǓSCALE 10:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*SOT −1123CASE 524AA ISSUE CDATE 29 NOV 2011SCALE 8:1NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.GENERICMARKING DIAGRAM*X = Specific Device Code M= Date Code*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.DIM MIN MAXMILLIMETERS A 0.340.40b 0.150.28c 0.070.17D 0.750.85E 0.550.650.95 1.05L 0.185 REF H E cA*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*X Me b10.100.20STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODE STYLE 3:PIN 1.ANODE2.ANODE3.CATHODE STYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 5:PIN 1.GATE2.SOURCE3.DRAIN0.350.40TOP VIEWSIDE VIEWBOTTOM VIEW DIMENSIONS: MILLIMETERS0.26OUTLINEL20.050.15SOT −723CASE 631AA −01ISSUE DDATE 10 AUG 2009DIMMIN NOM MAX MILLIMETERS A 0.450.500.55b 0.150.210.27b10.250.310.37C 0.070.120.17D 1.15 1.20 1.25E 0.750.800.85e 0.40 BSC H 1.15 1.20 1.25L E NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS OR GATE BURRS.eLXX = Specific Device Code M= Date CodeGENERICMARKING DIAGRAM*SCALE 4:1XX M STYLE 1:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 2:PIN 1.ANODE2.N/C3.CATHODESTYLE 3:PIN 1.ANODE2.ANODE3.CATHODESTYLE 4:PIN 1.CATHODE2.CATHODE3.ANODE1*This information is generic. Please refer to device data sheet for actual part marking. Pb −Free indicator, “G”, may or not be present.*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*STYLE 5:PIN 1.GATE2.SOURCE3.DRAINL20.150.200.250.29 REF 3X3X2XBOTTOM VIEWSIDE VIEWRECOMMENDEDDIMENSIONS: MILLIMETERS3XMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.© Semiconductor Components Industries, LLC, 2019PUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative◊。

TVS二极管-P6SMB系列规格书

P6SMB91A P6SMB91CA 91A 91C 86.45 95.55 1
P6SMB100A P6SMB100CA 100A 100C 95.00 105.00 1
P6SMB110A P6SMB110CA 110A 110C 104.50 115.50
1
P6SMB120A P6SMB120CA 120A 120C 114.00 126.00
Parameter Peak power dissipation with a 10/1000μs waveform(1)
Symbol PPP
Value 600
Peak pulse current with a 10/1000μs waveform(1)
IPP See Next Table
Power dissipation on infinite heatsink at TL = 75 °C
except Bipolar ● Mounting position: Any
Surface Mount Transient Voltage Suppressors
SMB/ DO-214AA
0.191 [4.85] 0.171 [4.35]
0.087 [2.20] 0.078 [1.96]
0.148 [3.75] 0.130 [3.30]
P6SMB43A P6SMB43CA 43A 43C 40.85 45.15 1
P6SMB47A P6SMB47CA 47A 47C 44.65 49.35 1
P6SMB51A P6SMB51CA 51A 51C 48.45 53.55 1
P6SMB56A P6SMB56CA 56A 56C 53.20 58.80 1

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SMBJ5.0 thru SMBJ188CAVishay General SemiconductorDocument Number: 88392For technical questions within your region, please contact one of the following:Surface Mount T RANS Z ORB ® Transient Voltage SuppressorsFEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction••cycle): 0.01 %•Excellent clamping capability •Very fast response time•Low incremental surge resistance•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Solder dip 260 °C, 40 s •Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONSUse in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.MECHANICAL DATA Case: DO-214AA (SMBJ)Molding compound meets UL 94 V-0 flammabilityratingBase P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/automotive grade (AEC Q101 qualified)Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102E3 suffix meets JESD 201 class 1A whisker test, HE3suffix meets JESD 201 class 2 whisker testPolarity: For uni-directional types the band denotes cathode end, no marking on bi-directional typesDEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use C or CA suffix (e.g. SMBJ10CA).Electrical characteristics apply in both directions.PRIMARY CHARACTERISTICSV WM 5.0 V to 188 VP PPM600 W I FSM (uni-directional only)100 A T J max.150 °CDO-214AA (SMB J-Bend)Notes:(1) Non-repetitive current pulse, per Fig. 3 and derated above T A = 25 °C per Fig. 2(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminalMAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) P PPM 600 W Peak pulse current with a 10/1000 µs waveform (1)I PPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I FSM 100 AOperating junction and storage temperature range T J , T STG- 55 to + 150°CSMBJ5.0 thru SMBJ188CAVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88392ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)DEVICE TYPE MODIFIED“J” BEND LEADDEVICE MARKINGCODE BREAKDOWN VOLTAGE V BR AT I T (1)(V) TEST CURRENTI T (mA) STAND-OFF VOLTAGE V WM (V)MAXIMUM REVERSE LEAKAGE AT V WM I D (µA) (3)MAXIMUM PEAK PULSE SURGE CURRENT I PPM (A)(2)MAXIMUM CLAMPING VOLTAGE AT I PPMV C (V)UNIBIMIN.MAX.(+)SMBJ5.0 KD KD 6.40 7.82 10 5.0 800 62.5 9.6(+)SMBJ5.0A (5)KE KE 6.40 7.07 10 5.0 800 65.2 9.2(+)SMBJ6.0 KF KF 6.67 8.15 10 6.0 800 52.6 11.4 (+)SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3 (+)SMBJ6.5 KH AH 7.22 8.82 10 6.5 500 48.8 12.3 (+)SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2 (+)SMBJ7.0 KL KL 7.78 9.51 10 7.0 200 45.1 13.3 (+)SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0 (+)SMBJ7.5 KN AN 8.33 10.2 1.0 7.5 100 42.0 14.3 (+)SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9 (+)SMBJ8.0 KQ AQ 8.89 10.9 1.0 8.0 50 40.0 15.0 (+)SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6 (+)SMBJ8.5 KS AS 9.44 11.5 1.0 8.5 20 37.7 15.9 (+)SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4 (+)SMBJ9.0 KU AU 10.0 12.2 1.0 9.0 10 35.5 16.9 (+)SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4 (+)SMBJ10 KW AW 11.1 13.6 1.0 10 5.0 31.9 18.8 (+)SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0 (+)SMBJ11 KY KY 12.2 14.9 1.0 11 5.0 29.9 20.1 (+)SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2 (+)SMBJ12 LD BD 13.3 16.3 1.0 12 5.0 27.3 22.0 (+)SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9 (+)SMBJ13 LF LF 14.4 17.6 1.0 13 1.0 25.2 23.8 (+)SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5 (+)SMBJ14 LH BH 15.6 19.1 1.0 14 1.0 23.3 25.8 (+)SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2 (+)SMBJ15 LL BL 16.7 20.4 1.0 15 1.0 22.3 26.9 (+)SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4 (+)SMBJ16 LN LN 17.8 21.8 1.0 16 1.0 20.8 28.8 (+)SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0 (+)SMBJ17 LQ LQ 18.9 23.1 1.0 17 1.0 19.7 30.5 (+)SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6 (+)SMBJ18 LS BS 20.0 24.4 1.0 18 1.0 18.6 32.2 (+)SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2 (+)SMBJ20 LU LU 22.2 27.1 1.0 20 1.0 16.8 35.8 (+)SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4 (+)SMBJ22 LW BW 24.4 29.8 1.0 22 1.0 15.2 39.4 (+)SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5 (+)SMBJ24 L Y BY 26.7 32.6 1.0 24 1.0 14.0 43.0 (+)SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9 (+)SMBJ26 MD CD 28.9 35.3 1.0 26 1.0 12.9 46.6 (+)SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1 (+)SMBJ28 MF MF 31.1 38.0 1.0 28 1.0 12.0 50.0 (+)SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4 (+)SMBJ30 MH CH 33.3 40.7 1.0 30 1.0 11.2 53.5 (+)SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4 (+)SMBJ33 ML CL 36.7 44.9 1.0 33 1.0 10.2 59.0 (+)SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3 (+)SMBJ36 MN CN 40.0 48.9 1.0 36 1.0 9.3 64.3 (+)SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1 (+)SMBJ40 MQ CQ 44.4 54.3 1.0 40 1.0 8.4 71.4 (+)SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5SMBJ5.0 thru SMBJ188CAVishay General SemiconductorDocument Number: 88392For technical questions within your region, please contact one of the following:Notes:(1)Pulse test: tp ≤ 50 ms(2)Surge current waveform per Fig. 3 and derate per Fig. 2(3)For bi-directional types having V WM of 10 V and less, the I D limit is doubled (4)All terms and symbols are consistent with ANSI/IEEE C62.35(5)For the bi-directional SMBG/SMBJ5.0CA, the maximum V BR is 7.25 V (6)V F = 3.5 V at I F = 50 A (uni-directional only)(+)Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766 for both uni-directional and bi-directional devices(+)SMBJ43 MS CS 47.8 58.4 1.0 43 1.0 7.8 76.7(+)SMBJ43A MT CT 47.8 52.8 1.043 1.0 8.6 69.4(+)SMBJ45 MU MU 50.0 61.1 1.0 45 1.0 7.5 80.3 (+)SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7 (+)SMBJ48 MW MW 53.3 65.1 1.0 48 1.0 7.0 85.5 (+)SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4 (+)SMBJ51 MY MY 56.7 69.3 1.0 51 1.0 6.6 91.1 (+)SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4 (+)SMBJ54 ND ND 60.0 73.3 1.0 54 1.0 6.2 96.3 (+)SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1 (+)SMBJ58 NF NF 64.4 78.7 1.0 58 1.0 5.8 103 (+)SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6 (+)SMBJ60 NH NH 66.7 81.5 1.0 60 1.0 5.6 107 (+)SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8 (+)SMBJ64 NL NL 71.1 86.9 1.0 64 1.0 5.3 114 (+)SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103 (+)SMBJ70 NN NN 77.8 95.1 1.0 70 1.0 4.8 125 (+)SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113 (+)SMBJ75 NQ NQ 83.3 102 1.0 75 1.0 4.5 134 (+)SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121 (+)SMBJ78 NS NS 86.7 106 1.0 78 1.0 4.3 139 (+)SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126 (+)SMBJ85 NU NU 94.4 115 1.0 85 1.0 4.0 151 (+)SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137 (+)SMBJ90 NW NW 100 122 1.0 90 1.0 3.8 160 (+)SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146 (+)SMBJ100 NY NY 111 136 1.0 100 1.0 3.4 179 (+)SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162 (+)SMBJ110 PD PD 122 149 1.0 110 1.0 3.1 196 (+)SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177 (+)SMBJ120 PF PF 133 163 1.0 120 1.0 2.8 214 (+)SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193 (+)SMBJ130 PH PH 144 176 1.0 130 1.0 2.6 231 (+)SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209 (+)SMBJ150 PL PL 167 204 1.0 150 1.0 2.2 268 (+)SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243 (+)SMBJ160 PN PN 178 218 1.0 160 1.0 2.1 287 (+)SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259 (+)SMBJ170 PQ PQ 189 231 1.0 170 1.0 2.0 304 (+)SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275 SMBJ188 PT PT 209 255 1.0 188 1.0 1.7 344 SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)DEVICE TYPE MODIFIED“J” BEND LEADDEVICE MARKINGCODE BREAKDOWN VOLTAGE V BR AT I T (1)(V) TEST CURRENTI T (mA) STAND-OFF VOLTAGE V WM (V)MAXIMUM REVERSE LEAKAGE AT V WM I D (µA) (3)MAXIMUM PEAK PULSE SURGE CURRENT I PPM (A) (2)MAXIMUM CLAMPING VOLTAGE AT I PPMV C (V)UNIBIMIN.MAX.SMBJ5.0 thru SMBJ188CAVishay General Semiconductor For technical questions within your region, please contact one of the following:Document Number: 88392Note:(1) Mounted on minimum recommended pad layoutNote:(1) Automotive grade AEC Q101 qualifiedRATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)THERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL VALUEUNITTypical thermal resistance, junction to ambient (1)R θJA 100 °C/WTypical thermal resistance, junction to lead R θJL20 °C/WORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODESMBJ5.0A-E3/520.096527507" diameter plastic tape and reel SMBJ5.0A-E3/5B 0.0965B 320013" diameter plastic tape and reel SMBJ5.0AHE3/52 (1)0.096527507" diameter plastic tape and reel SMBJ5.0AHE3/5B (1)0.0965B320013" diameter plastic tape and reelFigure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Power or Current vs. Initial Junction TemperatureFigure 3. Pulse WaveformFigure 4. Typical Junction CapacitanceSMBJ5.0 thru SMBJ188CAVishay General SemiconductorDocument Number: 88392For technical questions within your region, please contact one of the following:PACKAGE OUTLINE DIMENSIONS in inches (millimeters)Figure 5. Typical Transient Thermal ImpedanceFigure6. Maximum Non-Repetitive Peak Forward Surge CurrentDisclaimer Legal Disclaimer NoticeVishayALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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