APM3020P中文资料

Copyright ANPEC Electronics Corp.
1
Rev. A.1 - July., 2002

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APM3020P
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Copyright ANPEC Electronics Corp.
4
Rev. A.1 - July., 2002

元器件交易网
APM3020P
Typical Characteristics Cont.
-ISD-Source Current (A)
3000
2500
2000
1500
1000
500
0
10-5
10-4
10-3
10-2
10-1
100
101
Time (sec)
Normalized Effective Transient Thermal Impedance
Normalized Transient Thermal Transient Impedence, Junction to Ambient

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APM3020P
Typical Characteristics Cont.
RDS (ON)-On-Resistance (Ω)
On-Resistance vs. Gate-to-Source Voltage
0.15 -IDS=7A
0.89
1.27
0.508
0.89
5.207
5.461
0.46
0.58
0.46
0.58
5.334
6.22
6.35
6.73
3.96
5.18
9.398
10.41
0.51
0.64
1.02
0.89
2.032
Copyright ANPEC Electronics Corp.
6
Rev. A.1 - July., 2002
Min. 0.086 0.035 0.020 0.205 0.018 0.018 0.210 0.250 0.156 0.370 0.020 0.025 0.035
Inches
Max. 0.094 0.050 0.035 0.215 0.023 0.023 0.245 0.265 0.204 0.410
Symbol TJ TSTG RθJC
Parameter Maximum Junction Temperature Storage Temperature Range Thermal Resistance – Junction to Case
Rating 150
-55 to 150 2.5
Unit ºC ºC ºC/W
TA=25 ºC TA=100 ºC
-30
±20
V
-40
-70
A
50 W
20
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
0.035
0.030 0.025 0.020
-VGS=5V -VGS=10V
0.015
0.010
0.005 0
5 10 15 20 25 30
-IDS-Drain Current (A)
Copyright ANPEC Electronics Corp.
3
Rev. A.1 - July., 2002
Output Characteristics
50
VGS=4,5,6,7,8,9,10V 40
30
20
VGS=3V
10 VGS=2.5V
0
0
2
4
6
8
10
-VDS-Drain-to-Source Voltage (V)
-IDS-Drain Current (A)
Transfer Characteristics
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APM3020P
P-Channel Enhancement Mode MOSFET
Features
Pin Description
• -30V/-11A, RDS(ON) = 17mΩ(typ.) @ VGS = -10V
RDS(ON) = 24mΩ(typ.) @ VGS = -5V
1 0 -2
1 0 -1
100
101
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp.
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Rev. A.1 - July., 2002

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APM3020P
0
10
20
30
40
QG-Total Gate Charge (nC)
C-Capacitance (pF)
Capacitance Characteristics
3000
2500
Ciss 2000
1500
1000
Coss 500
Crss
0
0
5 10 15 20 25 30
-VDS-Drain-to-Source Voltage (V)
GD S
Top View of TO-252
Ordering and Marking Information
APM 3020P
APM3020P U :
H andling C ode Tem p. Range Package Code
APM 3020P : TO -252
VGS=-5V , IDS=-7A
VSDa Diode Forward Voltage Dynamicb
ISD=-11A, VGS=0V
Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
50
40
30
20
TJ=125°C
10
TJ=25°C
TJ=-55°C
0
0
1
2
3
4
5
-VGS-Gate-to-Source Voltage (V)
-VGS(th)-Threshold Voltage (V) (Normalized)
Threshold Voltage vs. Junction Temperature
Source-Drain Diode Forward Voltage
50 10
1 TJ=150°C
TJ=25°C
0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
-VSD-Source-to-Drain Voltage (V )
Power (W)
Single Pulse Power
b : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%
APM3020P Min. Typ. Max.
Unit
-30
V
-1
µA
-1
-3
V
±100 nA
17
20
mΩ
24
30
-1.3
-1.3
V
23
30
10
nC
9
16
30
22
30
75 120
ns
31
80
3720
O perating Junction Tem p. R ange C : -55 to 125°C
H andling C ode TU : Tube TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
0.12
0.09
0.06
0.03
0.000
2
4
6
8
10
-VGS - Gate-to-Source Voltage (V)
RDS(ON)-On-Resistance (Ω) (Normalized)
On-Resistaence vs. Junction Temperature
0.030 0.025
-V-IDGSS==1110AV
0.020
0.015
0.010
0.005
0.000-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
-VGS-Gate-to-Source Voltage (V)
10 --VIDDSS==41.65AV
8
Gate Charge
6
4
2
0
1
Duty Cycle=0.5
D=0.2
0 .1 D=0.1
D=0.05
D=0.02 D=0.01
SINGLE PULSE
0.0 1 1 0 -5
1 0 -4
1. Duty Cycle , D=t1/t2
2. 3.
TPJeMr-TUAn=iPt BDMaZstehJ=A RthJA=50°C/W
1 0 -3
• Super High Density Cell Design • Reliable and Rugged • TO-252 Package
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered Systems
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=-250A
1.50 -IDS=250µA
1.25 1.00 0.75 0.50 0.25 0.00
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Drain Current
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E b2
L2
A C1
b e1
D H
L1 L
C A1
Dim
A A1 b b2 C C1 D E e1 H L L1 L2
Millimeters
Min.
Max.
2.18
2.39
VDS=-15V , VGS=-4.5V, IDS=-4.6A
VDD=-15V , IDS=-6A , VGEN=-10 V , RG=1Ω RL=2.5Ω
VGS=0V VDS=-25V Frequency=1.0MHz
Notes a : Guaranteed by design, not subject to production testing
580
pF
245
Copyright ANPEC Electronics Corp.
2
Rev. A.1 - July., 2002

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APM3020P
Typical Characteristics
-IDS-Drain Current (A)
Symbol
Parameter
Rating
Unit
VDSS VGSS
ID* IDM PD
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
IDSS VGS(th) IGSS
Ra DS(ON)
Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VDS=-24V , VGS=0V VDS=VGS , IDS=-250µA VGS=±20V , VDS=0V VGS=-10V , IDS=-11A