2SA1160三极管封装TO-92L

A,Dec,2010

2. COLLECTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

2SA1160 TRANSISTOR (PNP)

FEATURES

z High DC Current Gain and Excellent h FE Linearity z Low Saturation Voltage

MAXIMUM RATINGS (T a =25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter

Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-1mA,I E =

0 -20 V Collector-emitter breakdown voltage V (BR)CEO

I C =-10mA,I B =

0 -10 V Emitter-base breakdown voltage V (BR)EBO

I E =-1mA,I C =0 -6

V

Collector cut-off current I CBO V CB =-20V,I E =

0 -0.1 μA Emitter cut-off current I EBO V EB =-6V,I C =

0 -0.1 μA h FE(1) V CE =-1V, I C =-0.5A 140 600

DC current gain

h FE(2) V CE =-1V, I C =-4A 60 Collector-emitter saturation voltage V CE(sat) I C =-2A,I B =-0.05A -0.5 V Base-emitter voltage V BE V CE =-1V, I C =-2A -1.5 V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 50

pF Transition frequency

f T

V CE =-1V,I C =-0.5A

140

MHz

CLASSIFICATION OF h FE (1)

RANK A B

C

RANGE 140-280 200-400 300-600

Symbol Parameter Value Unit V CBO Collector-Base Voltage -20 V V CEO Collector-Emitter Voltage -10 V V EBO Emitter-Base Voltage -6 V I C Collector Current

-2 A P C Collector Power Dissipation

900 mW R θJA Thermal Resistance From Junction To Ambient 139 ℃/W T j Junction Temperature 150 ℃ T stg

Storage Temperature

-55~+150

℃

【南京南山半导体有限公司 — 长电三极管选型资料】

Sponge strip

2000 pcs

Sponge strip The top gasket

Label on the Inner Box

Label on the Outer Box

Inner Box: 333 mm ×203mm ×42mm

Outer Box: 493 mm × 400mm × 264mm

QA Label

Seal the box with the tape

Stamp “EMPTY”

on the empty box

The top gasket

Inner Box: 240 mm ×165mm ×９５mm

Label on the Inner Box

Outer Box: 525 mm × 360mm × 262mm

Label on the Outer Box

QA Label

Seal the box with the tape

Stamp “EMPTY” on the empty box