MMBT3906贴片三极管规格书
MMBT3906 40V PNP 小信号晶体管 SOT23 数据手册说明书
MMBT3906Features• Epitaxial Planar Die Construction• Ideal for Medium Power Amplification and Switching • Complementary NPN Type: MMBT3904• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4)Mechanical Data• Case: SOT23• Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish—Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 •Weight: 0.008 grams (Approximate)Ordering Information (Notes 4 & 5)Product Status Compliance Marking Reel Size (inches)Tape Width (mm)Quantity per ReelMMBT3906-7-F Active AEC-Q101 K3N 7 8 3000 MMBT3906Q-7-F Active Automotive K3N 7 8 3000 MMBT3906Q-13-F Active Automotive K3N 13 8 10,000 MMBT3906-13-FActive AEC-Q101 K3N 13 8 10,000Notes:1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.2. See https:///quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https:///quality/.5. For packaging details, go to our website at /products/packages.html.Marking InformationDate Code KeyYear 2015 2016 2017 2018 2019 2020 2021 2022 CodeC DE F G HI JTop ViewSOT23Device SymbolTop View Pin-OutK3NY MK3N = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E= 2017)M or M = Month (ex: 9 = September)Absolute Maximum Ratings(@T A = +25°C, unless otherwise specified.)Thermal Characteristics(@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitPower Dissipation (Note 6)P D310mW (Note 7) 350Thermal Resistance, Junction to Ambient (Note 6)RϴJA403°C/W (Note 7) 357Thermal Resistance, Junction to Leads (Note 8) RϴJL350 °C/W Operating and Storage Temperature Range T J,T STG-55 to +150 °CNotes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; the device is measured under still air conditions while operating in a steady-state.7. Same as Note 6 except the device is mounted on 15 mm × 15mm 1oz copper.8. Thermal resistance from junction to solder-point (at the end of the leads).9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.Thermal Characteristics and Derating InformationTransient Therm al Im pedancePulse Width (s)Pulse Power DissipationPulse Width (s)MElectrical Characteristics(@T A = +25°C, unless otherwise specified.)Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.Typical Electrical Characteristics (@T A = +25°C, unless otherwise specified.)h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Figure 1 Typical DC Current Gainvs. Collector CurrentC V , C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Figure 2 Typical Collector-Emitter Saturation Voltagevs. Collector CurrentC 0.1110V , B A S E -E M I T T E R (V )B E (S A T )S A T U R A T I O N V O L T A G E I , COLLECTOR CURRENT (mA)Figure 3 Typical Base-Emitter Saturation Voltagevs. Collector CurrentC 100C A P A C I T A N C E (p F )V , REVERSE VOLTAGE (V)Figure 4 Typical Capacitance Characteristics RPackage Outline DimensionsPlease see /package-outlines.html for the latest version.SOT23SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.502.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.803.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mmSuggested Pad LayoutPlease see /package-outlines.html for the latest version.SOT23。
三极管 MMBT3906 中文规格参数资料
2000 Apr 11
2
Philips Semiconductors
Product specification
PNP switching transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V IC = 0; VEB = −6 V VCE = −1 V; (see Fig.2) IC = −0.1 mA IC = −1 mA IC = −10 mA IC = −50 mA IC = −100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation IC = −10 mA; IB = −1 mA voltage IC = −50 mA; IB = −5 mA base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −1 mA IC = −50 mA; IB = −5 mA IE = ie = 0; VCB = −5 V; f = 1 MHz IC = −10 mA; VCE = −20 V; f = 100 MHz 60 80 100 60 30 − − − − − 250 − − − − MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500
MMBT3906 2A三极管 SOT23 0.2A 40V PNP贴片三极管
SOT-23塑封封装PNP 半导体三极管。
Silicon PNP transistor in a SOT-23 Plastic Package.高h FE ，低V CE(sat)。
High DC Current Gain, Low Collector to Emitter Saturation Voltage.用于普通放大及开关。
General purpose amplifier and switching.PIN 1：Base PIN 2：EmitterPIN 3：Collector放大及印章代码 / h FE Classifications & Markingh FE Range100～300Marking 2A描述 / Descriptions特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit引脚排列 / Pinning231SxinenMMBT3906参数Parameter符号Symbol数值Rating单位UnitCollector to Base Voltage V CBO-40 V Collector to Emitter Voltage V CEO-40 V Emitter to Base Voltage V EBO-5.0 V Collector Current I C -200 mA Collector Power Dissipation P C300 mW Junction Temperature T j150 ℃Storage Temperature Range T stg-55～150 ℃参数Parameter符号Symbol测试条件Test Conditions最小值Min典型值Typ最大值Max单位UnitCollector to Base BreakdownVoltageV CBO I C=-10μA I E=0 -40 V Collector to Emitter BreakdownVoltageV CEO I C=-1.0mA I B=0 -40 V Emitter to Base BreakdownVoltageV EBO I E=-10μA I C=0 -5.0 V Collector Cut-Off Current I CBO V CB=-30V I E=0 -0.05μA Emitter Cut-Off Current I EBO V EB=-3.0V I C=0 -0.05μADC Current Gain h FE(1)V CE=-1.0V I C=-10mA 100 300 h FE(2)V CE=-1.0V I C=-100mA30h FE(3)V CE=-1.0V I C=-50mA 60h FE(4)V CE= -1.0V I C=-1.0mA80h FE(5)V CE=-1.0V I C=-0.1mA60Collector-Emitter Saturation voltage V CE(sat) (1) I C=-10mA I B=-1.0mA -0.25V V CE(sat) (2)I C=-50mA I B=-5.0mA -0.4VBase-Emitter Saturation Voltage V BE(sat) (1)I C=-10mA I B=-1.0mA -0.65 -0.85VV BE(sat) (2)I C=-50mA I B=-5.0mA -0.95VTransition Frequency f T V CE=-20V I C=-10mAf=100MHz250 MHz极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃)参数 Parameter符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值Max 单位Unit Output Capacitance C obV CB =-5.0V f = 1.0MHz 4.5 pF Storage Time t stg V CC =-3.0V I C =-10mAI B1=-I B2=-1.0mA225 nsFall Time t f V CC =-3.0V I C =-10mAI B1=-I B2=-1.0mA75 nsDelay Time t d V CC =-3.0V V BE =-0.5VI C =-10mA I B1=-1.0mA 35 nsRise Time t r V CC =-3.0V V BE =-0.5VI C =-10mA I B1=-1.0mA35 nsInput Capacitance C ibV EB =-0.5Vf = 1.0MHz 10 pF电性能参数 / Electrical Characteristics(Ta=25℃)电参数曲线图 / Electrical Characteristic Curve外形尺寸图 / Package Dimensions印章说明 / Marking Instructions2A Array说明：2A： 为型号代码Note:2A：Product Type Code回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free)说明：Note:1、预热温度25～150℃，时间60～90sec; 1.Preheating:25~150℃, Time:60~90sec.2、峰值温度245±5℃，时间持续为5±0.5sec; 2.PeakTemp.:245±5℃, Duration:5±0.5sec.3、焊接制程冷却速度为2～10℃/sec. 3.Cooling Speed: 2~10℃/sec.耐焊接热试验条件/ Resistance to Soldering Heat Test Conditions温度：260±5℃时间：10±1sec.Temp.:260±5℃Time:10±1 sec包装规格 / Packaging SPEC.卷盘包装/ REELPackage Type 封装形式Units包装数量 Dimension包装尺寸 (unit：mm3)Units/Reel只/卷盘Reels/Inner Box卷盘/盒Units/Inner Box只/盒Inner Boxes/Outer Box盒/箱Units/Outer Box只/箱Reel Inner Box盒 OuterBox箱SOT-23 3,000 10 30,000 6 180,000 7〞×8 180×120×180 390×385×205 使用说明/ Notices。
MMBT3904 PDF规格书
150
100
50
100
3
30
60
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta
(℃)
300
Ta=25℃
0.8
.
Ta=100℃
100
Ta=100℃
Ta=25℃
0.4
30
β=10
10 1 3 10 30 100 200 0.0 1 3 10 30 100
β=10
300
COLLECTOR CURRENT
IC
(mA)
COLLECTOR CURRENT
IC
(mA)
100
IC
COMMON EMITTER VCE=1V
100
COLLECTOR-EMITTER VOLTAGE
VCE
(V)
COLLECTOR CURRENT
IC
(mA)
600
VCEsat
——
IC
1.2
VBEsat
——
IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
BASE-EMMITER VOLTAGE VBE (V)
300
REVERSE VOLTAGE
V
(V)
fT
Ta=25℃ VCE=20a
(MHz)
COLLECTOR POWER DISSIPATION PC (mW)
1 10
200
PNP贴片三极管数据手册
MMBT3906PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR·Epitaxial Planar Die Construction ·Complementary NPN Type Available (MMBT3904)·Ideal for Medium Power Amplification and Switching ·Available in Lead Free/RoHS Compliant Version (Note 2)FeaturesMaximum Ratings@ T A = 25°C unless otherwise specifiedMechanical Data·Case: SOT-23·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C ·Terminal Connections: See Diagram·Terminals: Solderable per MIL-STD-202, Method 208·Also Available in Lead Free Plating (Matte TinFinish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2·Marking (See Page 2): K3N·Ordering & Date Code Information: See Page 2·Weight: 0.008 grams (approximate)Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at /datasheets/ap02001.pdf. 2. No purposefully added lead.SPICE MODEL: MMBT3906Electrical Characteristics @ T A = 25°C unless otherwise specifiedNotes: 3. Short duration test pulse used to minimize self-heating effect.4. For Packaging Details, go to our website at /datasheets/ap02007.pdf.5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3906-7-F.K3NY MK3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002M = Month ex: 9 = SeptemberMarking InformationOrdering Information Date Code Key(Note 4)050100255075100125150175200P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)A Fig. 1, Max Power Dissipation vsAmbient Temperature1502002503003500100100.1110100C , I N P U T C A P A C I T A N C E (p F )I B O C , O U T P U T C A P A C I T A N C E (p F )O B O V , COLLECTOR-BASE VOLTAGE (V)CB Fig. 2, Input and Output Capacitance vs.Collector-Base Voltage11010001000.11101000100h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)C Fig. 3, Typical DC Current Gain vsCollector Current1011101001000V , C O L L E C T O R -E M I T T E R (V )C E (S A T ) S A T U R A T I O N V O L T A G EI , COLLECTOR CURRENT (mA)C Fig. 4, Typical Collector-Emitter Saturation Voltagevs. Collector Current0.11100.11101001000V , B A S E -E M I T T E R (V )B E (S A T ) S A T U R A T I O N V O L T A G EI , COLLECTOR CURRENT (mA)C Fig. 5, Typical Base-EmitterSaturation Voltage vs. Collector Current。
贴片三极管参数和型号查询
50 -80 -50 -30 -30 -50 -32 45 -45 -40 300 -300 250 -250 15 -35 30 30 -35 -50 -35 50 60 35 35 40 25 20 60 75 -60 -60 60 -40 60 -40 -180 180 300 500 -300 40
2SA733M PNP 2SA812 PNP 2SB1590K PNP 2SB624 2SB709A 2SC1009A 2SC1623 2SC1674M 2SC1740M 2SC1741A M 2SC1815M 2SC1959M 2SC2404 2SC2411K 2SC2412K 2SC2413K 2SC2712 2SC2714 2SC2715 2SC2732 2SC2734 2SC2736 2SC2812 2SC2999M 2SC3130 2SC3142 2SC3326 PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
2SC5343S NPN 2SC536KM NPN 2SC536M 2SC945M 2SD1328 2SD1484K 2SD1781K NPN NPN NPN PNP NPN
2SD1936M NPN 2SD2142K NPN 2SD596 2SD601A 8050M 8550M 9011M 9012M 9013M 9014M 9015M 9016M 9018M BC337M BC570 BC807 BC817 BC846 BC847 BC848 NPN NPN NPN PNP NPN PNP NPN NPN PNP NPN NPN NPN NPN PNP NPN NPN NPN NPN
MMBT3904DW1T1G开关三极管规格书
The MMBT3904DW1T1G device is a spin–off of our popular MMBT3904DW1T1GDual General Purpose TransistorsSOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.●FEATURES1)Low VCE(sat), ≤ 0.4 V 2)Simplifies Circuit Design3)Reduces Board Space4)Reduces Component Count5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–3007)We declare that the material of product compliant with RoHS requirements and Halogen Free.8) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.MMBT3904DW1T1G●ELECTRICAL CHARACTERISTICS (Ta= 25℃)2. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.●ELECTRICAL CHARACTERISTICS (Ta= 25℃)(CONTINUED)Figure 1. Delay and Rise TimeEquivalent Test Circuit Figure 2. Storage and Fall TimeEquivalent Test Circuit-ā0010 < t 1 < 500 m * T otal shunt capacitance of test jig and connectorsMMBT3904DW1T1GELRCTRICAL CHARACTERISTICS CURVESFIG.3 Capacitance FIG.4 Current GainFIG.6 Collector Saturation RegionFIG.5 DC Current GainMMBT3904DW1T1G ELRCTRICAL CHARACTERISTICS CURVESFIG.9 VBE(on) vs. ICFIG.7 VCE(sat) vs. IC FIG.8 VBE(sat) vs. IC0.20.40.60.811.21.40.00010.0010.010.11V B E s a t , B a s e -E m i t t e r S a t u r a t i o n V o l t a g e (V )IC, Collector Current(A) 25℃150℃-55℃MMBT3904DW1T1GSC-88NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: INCH.INCHES MILLIMETERSDIMMIN MAXMIN MAX A 0.0710.087 1.80 2.20B 0.0450.053 1.15 1.35C 0.0310.0430.80 1.10D 0.0040.0120.100.30G 0.026 BSC 0.65 BSC H ---0.004---0.10J 0.0040.0100.100.25K 0.0040.0120.100.30N 0.008 REF 0.20 REF S 0.0790.0872.00 2.20PIN 1. EMITTER 22. BASE 23. COLLECTOR 14.EMITTER 15. BASE 16.COLLECTOR 2MMBT3904DW1T1G。
FOSAN富信电子 三极管 MMBT3906-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT3906 SOT-23Bipolar Transistor双极型三极管▉Features特点PNP Switching开关▉Absolute Maximum Ratings最大额定值Characteristic特性参数Symbol符号Rat额定值Unit单位Collector-Base Voltage集电极基极电压V CBO-40V Collector-Emitter Voltage集电极发射极电压V CEO-40V Emitter-Base Voltage发射极基极电压V EBO-5V Collector Current集电极电流I C-200mA Power dissipation耗散功率P C(T a=25℃)200mW Thermal Resistance Junction-Ambient热阻RΘJA625℃/WJunction and Storage TemperatureT J,T stg-55to+150℃结温和储藏温度■Device Marking产品打标MMBT3906=2AANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT3906■ElectricalCharacteristics 电特性(TA =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown V oltage集电极基极击穿电压(I C =-10uA ，I E =0)BV CBO -40——V Collector-Emitter Breakdown Voltage 集电极发射极击穿电压(I C =-1mA ，I B =0)BV CEO -40——V Emitter-Base Breakdown V oltage发射极基极击穿电压(I E =-10uA ，I C =0)BV EBO -5——V Collector-Base Leakage Current集电极基极漏电流(V CB =-40V ，I E =0)I CBO ——-100nA Collector-Emitter Leakage Current 集电极发射极漏电流(V CE =-30V ,V BE =3V)I CEX ——-100nA Emitter-Base Leakage Current发射极基极漏电流(V EB =-5V ，I C =0)I EBO ——-100nADC Current Gain(V CE =-1V ，I C =-10mA)直流电流增益(V CE =-1V ，I C =-50mA)(V CE =-1V ，I C =-100mA)H FE 1006030—300Collector-Emitter Saturation Voltage集电极发射极饱和压降(I C =-50mA,I B =-5mA)V CE(sat)——-0.3V Base-Emitter Saturation V oltage基极发射极饱和压降(I C =-50mA,I B =-5mA)V BE(sat)——-0.95V Transition Frequency特征频率(V CE =-20V ，I C =-10mA)f T300——MH Z Delay Time 延迟时间(V CC =-3V,V BE =0.5V,I C =-10mA,I B1=-1mA)t d ——35ns Rise Time 上升时间(V CC =-3V,V BE =0.5V,I C =-10mA,I B1=-1mA )t r ——35ns Storage Time 贮存时间(V CC =-3V,I C =-10mA,I B1=I B2=-1mA)t s ——225ns Fall Time 下降时间(V CC =-3V,I C =-10mA,I B1=I B2=-1mA)t f——75nsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT3906■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MMBT3906■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
MMBT3906 SOT-23 规格书推荐
2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose Amplifier2N3906 / MMBT3906 / PZT3906PNP General-Purpose AmplifierOrdering InformationPart NumberMarkingPackagePacking MethodPack Quantity2N3906BU 2N3906TO-92 3L Bulk 100002N3906TA 2N3906TO-92 3L Ammo 20002N3906TAR 2N3906TO-92 3L Ammo 20002N3906TF2N3906TO-92 3L Tape and Reel 20002N3906TFR 2N3906TO-92 3L Tape and Reel 2000MMBT39062A SOT-23 3L Tape and Reel 3000PZT39063906SOT-223 4LTape and Reel25002N3906MMBT3906PZT3906E B CTO-92SOT-23SOT-223Mark:2ACBEE BCCDescriptionThis device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.2N3906 / MMBT3906 / PZT3906 — PNP General-Purpose AmplifierAbsolute Maximum Ratings (1)Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.Note:1.These ratings are based on a maximum junction temperature of 150°C.These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.Thermal CharacteristicsValues are at T A = 25°C unless otherwise noted.Notes:2.Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.3.PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x4.5 inch x 0.062 inch) with minimum land pattern size.SymbolParameter ValueUnitV CEO Collector-Emitter Voltage -40V V CBO Collector-Base Voltage -40V V EBO Emitter-Base Voltage-5.0V I C Collector Current - Continuous-200mA T J, T STGOperating and Storage Junction Temperature Range-55 to +150°CSymbolParameterMaximumUnit2N3906(3)MMBT3906(2)PZT3906(3)P D Total Device Dissipation 6253501,000mW Derate Above 25°C5.0 2.88.0mW/°C R θJC Thermal Resistance, Junction to Case 83.3°C/W R θJAThermal Resistance, Junction to Ambient200357125°C/WNote:4.Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.C obo Output Capacitance f = 100 kHz4.5pF C ibo Input Capacitance V EB = -0.5 V, I C = 0, f = 100 kHz10.0pF NFNoise FigureI C = -100 μA, V CE = -5.0 V, R S = 1.0 k Ω,f = 10 Hz to 15.7 kHz 4.0dBSWITCHING CHARACTERISTICSt d Delay Time V CC = -3.0 V, V BE = -0.5 V I C = -10 mA, I B1 = -1.0 mA 35ns t r Rise Time 35ns t s Storage Time V CC = -3.0 V, I C = -10 mA, I B1 = I B2 = -1.0 mA225ns t fFall Time75nsON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed atON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.PUBLICATION ORDERING INFORMATION。
MMBT3904T贴片三极管 SOT-523三极管封装MMBT3904T参数
A,Oct,2010JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-523 Plastic-Encapsulate TransistorsMMBT3904T TRANSISTOR (NPN)FEATURES● Complementary to MMBT3906T ● Small Package MARKING:1NMAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =10µA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10µA, I C =0 6 V Collector cut-off current I CEX V CE =30V, V EB(off)=3V 50 nA Emitter cut-off currentI EBO V EB =5V, I C =0 100 nA h FE(1)V CE =1V, I C =0.1mA 40 h FE(2) V CE =1V, I C =1mA 70 h FE(3) V CE =1V, I C =10mA 100 300 DC current gainh FE(4)V CE =1V, I C =50mA 60I C =10mA, I B =1mA 0.2 V Collector-emitter saturation voltage V CE(sat) I C =50mA, I B =5mA 0.3 V I C =10mA, I B =1mA 0.65 0.85 V Collector-emitter saturation voltage V BE(sat) I C =50mA, I B =5mA0.95 V Transition frequency f T V CE =20V,I C =10mA, f=100MHz 300 MHz Collector output capacitance C ob V CB =5V, I E =0, f=1MHz 4 pF Base input capacitance C ib V EB =0.5V, I C =0, f=1MHz 8 pF Delay time t d V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA35 ns Rise time t r V CC =3V, V BE(off)=-0.5V I C =10mA, I B1=1mA35 ns Storage time t s V CC =3V, I C =10mA, I B1= I B2=1mA 200 ns Fall timet fV CC =3V, I C =10mA, I B1= I B2=1mA50nsSymbol ParameterValue Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current200 mA P C Collector Power Dissipation150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55～+150℃3. COLLECTOR 【南京南山半导体有限公司 — 长电贴片三极管选型资料】The bottom gasketThe top gasket3000×1 PCS3000×15 PCSLabel on the ReelLabel on the Inner BoxLabel on the Outer BoxQA LabelSeal the box with the tapeSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 210 mm × 208 mm × 203 mmOuter Box: 440 mm × 440 mm × 230 mm。
贴片三极管的参数
贴片三极管的参数印字器件厂商类型封装器件用途及参数-28 PDTA114WU Phi N SOT323 pnp dtr-24 PDTC114TU Phi N SOT323 npn dtr R1 10k-23 PDTA114TU Phi N SOT323 pnp dtr R1 10k-20 PDTC114WU Phi N SOT323 npn dtr-6 PMSS3906 Phi N SOT323 2N3906-4 PMSS3904 Phi N SOT323 2N39040 2SC3603 Nec CX SOT173 Npn RF fT 7GHz1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain1 2SC3587 Nec CX - npn RF fT10GHz1 BA277 Phi I SOD523 VHF Tuner band switch diode2 BST82 Phi M - n-ch mosfet 80V 175mA2 MRF5711L Mot X SOT143 npn RF MRF5712 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain2 BAT62-02W Sie I SCD80 BAT16 schottky diode2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA3 BAT60A Sie I SOD323 10V 3A sw schottky3 BAT62-02W Sie I SCD80 -4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF5214 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.5 dBm4 BB664 Sie I SCD80 Varicap 42-2.5pF5 SSTPAD5 Sil J - PAD-5 5pA leakage diode5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA9 BC849 Mot N SOT23 BC 549B10 SSTPAD10 Sil J - PAD-10 10pA leakage diode10 MRF9411L Mot X SOT143 npn Rf 8GHz MRF94111 SO2369R SGS R SOT23R 2N236911 MRF9511L Mot X SOT143 npn RF 8GHz MRF95111 MUN5311DW1 Mot DP SOT363 npn/pnp dtr 10k+10k11 PDTA114EU Phi N SOT416 pnp dtr12 MUN5312DW1 Mot DP SOT363 npn/pnp dtr 22k+22k12 DTA123EUA Rho N SC70 pnp dtr 2k2+2k2 50V 100ma12 DTA123EKA Rho N SC59 pnp dtr 2k2+2k2 res 50V 100ma13 DTA143EUA Rho N SC70 pnp dtr 4k7+4k7 50V 100ma 13 DTA143EKA Rho N SC59 pnp dtr 4k7+4k7 50V 100ma13 DTA143ECA Rho N SOT23 pnp dtr 4k7+4k7 50V 100ma 13 MA4CS103A M/A C SOT23 Schottky RF 20V 100mA13 MUN5313DW1 Mot DP SOT363 npn/pnp dtr 47k+47k14 BAT114-099R Sie DQ - Quad Schottky crossover ring14 DTA114EUA Roh N SC70 pnp dtr 10k + 10k14 DTA114EKA Roh N SC59 pnp dtr 10k + 10k14 MUN5314DW1 Mot DP SOT363 npn/pnp dtr 10k R114 DTA114ECA Roh N SOT23 pnp dtr 10k + 10k15 DTA124EUA Roh N SC70 pnp dtr 30V 50mA 22k+22k15 DTA124EKA Roh N SC59 pnp dtr 30V 50mA 22k+22k15 DTA124ECA Roh N SOT23 pnp dtr 30V 50mA 22k+22k 15 MUN5315DW1 Mot DP SOT363 npn/pnp dtr 10k R115 MMBT3960 Mot N - 2N396016 MUN5316DW1 Mot DP SOT363 npn/pnp dtr 4k7 R116 DTA144EUA Roh N SC70 pnp dtr 30V 50mA 47k+47k16 DTA144EKA Roh N SC59 pnp dtr 30V 50mA 47k+47k18 BFP181T Tfk X - npn Rf fT 7.8GHz 10V 20mA18 PDTC143ZK Phi N SOT346 npn dtr 4k7+47k19 PDTA143ZK Phi N SOT346 pnp dtr 4k7+47k19 DTA115EUA Rho N SC70 pnp dtr 100k+100k 50V 100ma19 DTA115EKA Rho N SC59 pnp dtr 100k+100k 50V 100ma20 SSTPAD20 Sil J - PAD-20 20pA leakage diode20 MRF5811 Mot X SOT143 npn Rf fT 5GHz 0.2A21 Gali-21 MC AZ SOT89 DC-8GHz MMIC amp 14 dB gain22 MMBT4209 Nat N SOT23 pnp sw 850MHz 2N420922 DTC123EUA Rho N SC70 npn dtr 2k2+2k2 50V 100ma22 DTC123EKA Rho N SC59 npn dtr 2k2+2k2 50V 100ma23 MMBT3646 Nat N SOT23 npn sw 350MHz 2N364623 DTC143EUA Roh N SC70 pnp dtr 50V 100mA 4k7+ 4k7 23 DTC143EKA Roh N SC59 pnp dtr 50V 100mA 4k7+ 4k724 MMBD2101 Nat C SOT23 Si diode 100V 200mA24 DTC114ECA Roh N SOT23 npn dtr 50V 100mA 10k + 10k24 DTC114EUA Roh N SC70 npn dtr 50V 100mA 10k + 10k24 DTC114EKA Roh N SC59 npn dtr 50V 100mA 10k + 10k24 2SC5006 Nec N - npn RF fT 4.5GHz @3V 7mA25 MMBD2102 Nat K SOT23 Si diode 100V 200mA25 DTC124ECA Roh N SOT23 npn dtr 50V 100mA 22k + 22k25 DTC124EKA Roh N SC59 npn dtr 50V 100mA 22k + 22k25 DTC124EUA Roh N SC70 npn dtr 50V 100mA 22k + 22k26 MMBD2103 Nat D SOT23 dual MMBD120126 DTC144EKA Roh N SC59 npn dtr 50V 30mA 47k + 47k26 DTC144EUA Roh N SC70 npn dtr 50V 30mA 47k + 47k27 MMBD2104 Nat B SOT23 dual cc MMBD120128 BFP280T Tfk W - npn RF fT 7GHz 8V 10mA28 MMBD2105 Nat A SOT23 dual ca MMBD120129 MMBD1401 Nat C SOT23 Si diode 200V 100mA29 DTC115EE Roh N EMT3 npn dtr 100k +100k 50V 20mA29 DTC115EUA Roh N SC70 npn dtr 100k +100k 50V 20mA29 DTC115EKA Roh N SC59 npn dtr 100k +100k 50V 20mA30 MUN5330DW1 Mot DP SOT363 npn/pnp dtr 1k0+1k031 MUN5331DW1 Mot DP SOT363 npn/pnp dtr 2k2+2k231 MMBD1402 Nat K SOT23 Si diode 200V 100mA32 MUN5332DW1 Mot DP SOT363 npn/pnp dtr 4k7+4k732 MMBD1403 Nat D SOT23 dual Si diode 200V 100mA32 BAT32 Sie CS - 18GHz zero-bias schottky33 MUN5333DW1 Mot DP SOT363 npn/pnp dtr 4k7+47k33 DTA143XE Roh N EMT3 pnp dtr 4k7+10k 50V 100mA33 DTA143XUA Roh N SC70 pnp sw 4k7+10k bias res 50V 100mA 33 DTA143XKA Roh N SC59 pnp sw 4k7+10k bias res 50V 100mA 33 MMBD1404 Nat B SOT23 dual cc Si diode 200V 100mA33 Gali-33 MC AZ SOT89 DC-4GHz MMIC amp 19dB gain34 MUN5334DW1 Mot DP SOT363 npn/pnp dtr 22k+47k34 MMBD1405 Nat A SOT23 dual ca Si diode 200V 100mA34 2SC5007 Nec N - npn RF fT 7GHz @3V 7mA35 MUN5335DW1 Mot DP SOT363 npn/pnp dtr 2k2+47k35 DTA124XE Roh N EMT3 pnp dtr 22k+47k 50V 50mA35 DTA124XUA Roh N SC70 pnp dtr 22k+47k 50V 50mA35 DTA124XKA Roh N SC59 pnp dtr 22k+47k 50V 50mA41 BAT14-115S Sie CS SOT173 40GHz schottky diode41 BAT14-115R Sie CZ SOT173 40GHz schottky ring quad42 BAT14-025S Sie CS SOT173 4GHz schottky diode42 BAT14-025R Sie CZ SOT173 4GHz schottky ring quad43 BAS40 Sie C SOT23 schottky diode 40V 100mA43 DTA143EE Mot N SOT416 pnp dtr 4k7 + 4k743 DTC143XUA Roh N SC70 npn dtr 4k7+10k 50V 100mA43 DTC143XKA Roh N SC59 npn dtr 4k7+10k 50V 100mA44 BAS40-04 Sie D SOT23 dual series BAS4044 BAS40-04W Sie D SOT323 dual series BAS4044 2SC5009 Nec N - npn RF fT 12GHz @3V 5mA45 BAS40-05 Sie A SOT23 dual ca BAS4045 BAS40-05W Sie A SOT323 dual ca BAS4045 BAT14-055S Sie CS SOT173 8GHz schottky diode45 BAT14-055R Sie CZ SOT173 8GHz schottky ring quad 45 DTC124XE Roh N EMT3 npn dtr 22k+47k 50V 50mA 45 DTC124XUA Roh N SC70 npn dtr 22k+47k 50V 50mA45 DTC124XKA Roh N SC59 npn dtr 22k+47k 50V 50mA46 BAS40-06 Sie B SOT23 dual cc BAS4046 BAS40-06W Sie B SOT323 dual cc BAS4046 MBT3946DW Mot DP - 2N3904/2N3906 pair47 BAS40-07 Sie S SOT143 dual BAS4047 BAS40-07W Sie S SOT343 dual BAS4049 BAT14-095S Sie CS SOT173 18GHz shottky diode49 BAT14-095R Sie CZ SOT173 18GHz schottky ring quad50 SSTPAD50 Sil J - PAD-50 50pA leakage diode51 BAT15-115S Sie CS SOT173 40GHz schottky diode51 BAT15-115R Sie CZ SOT173 40GHz schottky ring quad52 BAT15-025S Sie CS SOT173 4GHz schottky diode52 BAT15-025R Sie CZ SOT173 4GHz schottky ring quad 52 Gali-52 MC AZ SOT89 DC-2GHz MMIC amp 23 dB gain 52 BAS52-02V Inf I SC79 Schottky diode 45V 750mA52 DTA123YE Roh N EMT3 pnp dtr 2k2 +10k 50V 100mA 52 DTA123YUA Roh N SC70 pnp dtr 2k2 +10k 50V 100mA 52 DTA123YKA Roh N SC59 pnp dtr 2k2 +10k 50V 100mA 54 DTA114YE Roh N EMT3 pnp dtr 10k + 47k 50V 100mA 54 DTA114YUA Roh N SC70 pnp dtr 10k + 47k 50V 100mA54 DTA114YKA Roh N SC59 pnp dtr 10k + 47k 50V 100mA55 BAT15-055S Sie CS SOT173 8GHz schottky diode55 BAT15-055R Sie CZ SOT173 8GHz schottky ring quad 55 Gali-55 MC AZ SOT89 DC-4GHz MMIC amp 21 dB gain57 BFQ57 Sie CX SOT173 npn 6.5GHz 16V/35mA58 BFQ58 Sie CX SOT173 npn 6.5GHz 16V/30mA59 BAT15-095S Sie CS SOT173 18GHz schottky diode59 BAT15-095R Sie CZ SOT173 18GHz schottky ring quad 62 DTC123YE Roh N EMT3 npn dtr 2k2 +10k 50V 100mA 62 DTC123YUA Roh N SC70 npn dtr 2k2 +10k 50V 100mA 62 DTC123YKA Roh N SC59 npn dtr 2k2 +10k 50V 100mA 64 DTC114YE Roh N EMT3 npn dtr 10k + 47k 50V 100mA64 DTC114YKA Roh N SC59 npn dtr 10k + 47k 50V 100mA67 BFP67 Tfk X - npn Rf fT 7.5GHz 10V 50mA69 DTA114YE Mot N SOT416 pnp dtr 10k +47k69 DTC115EE Roh N EMT3 npn dtr 100k+100k 50V 20mA69 DTC115EUA Roh N SC70 npn dtr 100k+100k 50V 20mA69 DTC115EKA Roh N SC59 npn dtr 100k+100k 50V 20mA70 BFQ70 Sie CX SOT173 npn fT 5.2GHz 15V 35mA71 BFQ71 Sie CX SOT173 npn fT 5.2GHz 15V 30mA72 BFQ72 Sie CX SOT173 npn fT 5.1GHz 15V 50mA72 2N7002 Sil M SOT23 n-ch mosfet 60V 170mA73 MA4CS101A M/A C SOT23 schottky diode 70V 50mA73 BFQ73 Sie CX SOT173 npn fT 4.9GHz 15V 75mA73 2SC5004 Nec N - npn RF 5GHz @5V 5mA74 BFQ74 Sie CX SOT173 npn fT 6GHz 16V 35mA74 MA4CS101B M/A D SOT23 dual series MA4CS101A (73)74 DTA114WE Rho N EMT3 pnp dtr 10k + 4k7 50V 100mA74 DTA114WUA Rho N SC70 pnp dtr 10k + 4k7 50V 100mA74 DTA114WKA Rho N SC59 pnp dtr 10k + 4k7 50V 100mA74 2SC5005 Nec N - npn RF 5.5GHz @5V 5mA75 BFQ75 Sie CX SOT173 pnp fT 5GHz 12V 50mA76 BFQ76 Sie CX SOT173 pnp fT 5GHz 15V 30mA76 DTA144WE Rho N EMT3 pnp dtr 47k + 22k 50V 30mA76 DTA144WUA Rho N SC70 pnp dtr 47k + 22k 50V 30mA76 DTA144WKA Rho N SC59 pnp dtr 47k + 22k 50V 30mA77 MA4CS101E M/A S SOT143 dual MA4CS101A (73)77 BFQ77 Sie CX SOT173 npn fT 7GHz 15V 20mA78 MMBT4258 Nat N SOT23 pnp sw fT 700MHz81 SO2369AR SGS R SOT23R 2N2369A81 ZMV831BV2 Zet I SOD523 28V hyperabrupt varicap 15pF @2V82 2SC5009 Nec N - npn RF fT 12GHz @ 3V 5mA82 ZMV832BV2 Zet I SOD523 28V hyperabrupt varicap 22pF @2V83 MMBT4400 Nat N - npn 2N440083 2SC5010 Nec N - npn RF fT 12GHz 3V 10mA83 MA4CS102A M/A C SOT23 schottky diode 8V 30mA84 MA4CS102B M/A D SOT23 dual ser schottky diode 8V 30mA 84 DTC114WE Rho N EMT3 npn dtr 10k + 4k7 50V 100mA84 DTC114WUA Rho N SC70 npn dtr 10k + 4k7 50V 100mA84 DTC114WKA Rho N SC59 npn dtr 10k + 4k7 50V 100mA85 MMBD1701 Nat C - Fast Si diode 30V 50mA85 MA4CS102A M/A B SOT23 dual cc schottky diode 8V 30mA86 MMBD1702 Nat K - Fast Si diode 30V 50mA86 DTC144WE Rho N EMT3 npn dtr 47k + 22k 50V 30mA86 DTC144WUA Rho N SC70 npn dtr 47k + 22k 50V 30mA87 MMBD1703 Nat D - dual ser MMBD170187 MA4CS102A M/A S SOT143 dual schottky diode 8V 30mA88 MMBD1704 Nat B - dual cc MMBD170189 MMBD1705 Nat A - dual ca MMBD170191 ZV931V2 Zet I SOD523 4-13.5pF hyperabrupt varicap91 DTA113TKA Roh N SC59 pnp dtr R11k0 50V 100mA92 ZV932V2 Zet I SOD523 5.5-17pF hyperabrupt varicap93 ZV933V2 Zet I SOD523 12-42pF hyperabrupt varicap93 DTA143TE Roh N EMT3 pnp dtr R1 4k7 50V 100mA93 DTA143TUA Roh N SC70 pnp dtr R1 4k7 50V 100mA93 DTA143TKA Roh N SC59 pnp dtr R1 4k7 50V 100mA94 DTA114TE Roh N EMT3 pnp dtr R1 10k 50V 100mA94 DTA114TUA Roh N SC70 pnp dtr R1 10k 50V 100mA94 DTA114TKA Roh N SC59 pnp dtr R1 10k 50V 100mA95 DTA124TE Roh N EMT3 pnp dtr R1 22k 50V 100mA95 DTA124TCA Roh N SOT23 pnp dtr R1 22k 50V 100mA95 DTA124TKA Roh N SC59 pnp dtr R1 22k 50V 100mA96 DTA144TE Roh N EMT3 pnp dtr R1 47k 50V 100mA96 DTA144TUA Roh N SC70 pnp dtr R1 47k 50V 100mA96 DTA144TKA Roh N SC59 pnp dtr R1 47k 50V 100mA99 DTA115TE Roh N EMT3 pnp dtr R1 100k 50V 100mA99 DTA115TUA Roh N SC70 pnp dtr R1 100k 50V 100mA 99 DTA115TKA Roh N SC59 pnp dtr R1 100k 50V 100mA 100 SSTPAD100 Sil J SOT23 PAD-100 100pA leakage diode 101 PZM10NB1 Phi C SOT346 10V 0.3W zener102 PZM10NB2 Phi C SOT346 10V 0.3W zener103 PZM10NB3 Phi C SOT346 10V 0.3W zener111 PZM11NB1 Phi C SOT346 11V 0.3W zener111 DTA113ZUA Roh N SC70 pnp dtr 1k+10k 50V 100mA 112 PZM11NB2 Phi C SOT346 11V 0.3W zener113 PZM11NB3 Phi C SOT346 11V 0.3W zener113 DTA143ZUA Roh N SC70 pnp dtr 4k7+47k 50V 100mA 121 PZM12NB1 Phi C SOT346 12V 0.3W zener121 DTC113ZUA Roh N SC70 npn dtr 1k+10k 50V 100mA 122 PZM12NB2 Phi C SOT346 12V 0.3W zener123 PZM12NB3 Phi C SOT346 12V 0.3W zener123 DTC143ZUA Roh N SC70 npn dtr 4k7+47k 50V 100mA 131 PZM13NB1 Phi C SOT346 13V 0.3W zener132 PZM13NB2 Phi C SOT346 13V 0.3W zener132 DTA123JUA Roh N SC70 pnp dtr 2k2+47k 50V 100mA 133 PZM13NB3 Phi C SOT346 13V 0.3W zener142 DTA123JUA Roh N SC70 npn dtr 2k2+47k 50V 100mA 151 PZM15NB1 Phi C SOT346 15V 0.3W zener152 PZM15NB2 Phi C SOT346 15V 0.3W zener153 PZM15NB3 Phi C SOT346 15V 0.3W zener156 DTA144VUA Roh N SC70 pnp dtr 47k+10k 50V 100mA 161 PZM16NB1 Phi C SOT346 16V 0.3W zener162 PZM16NB2 Phi C SOT346 16V 0.3W zener163 PZM16NB3 Phi C SOT346 16V 0.3W zener166 DTC144VUA Roh N SC70 npn dtr 47k+10k 50V 100mA 179 FMMT5179 Zet N - 2N5179181 PZM18NB1 Phi C SOT346 18V 0.3W zener182 PZM18NB2 Phi C SOT346 18V 0.3W zener183 PZM18NB3 Phi C SOT346 18V 0.3W zener200 SSTPAD200 Sil J - PAD-200 200pA leakage diode201 PZM20NB1 Phi C SOT346 20V 300mW Zener202 PZM20NB2 Phi C SOT346 20V 300mW Zener203 PZM20NB3 Phi C SOT346 20V 300mW Zener221 PZM22NB1 Phi C SOT346 22V 300mW Zener222 PZM22NB2 Phi C SOT346 22V 300mW Zener223 PZM22NB3 Phi C SOT346 22V 300mW Zener241 PZM24NB Phi C SOT346 24V 300mW Zener242 PZM24NB Phi C SOT346 24V 300mW Zener243 PZM20NB Phi C SOT346 24V 300mW Zener271 PZM2.7NB1 Phi C SOT346 2.7V 300mW Zener272 PZM2.7NB2 Phi C SOT346 2.7V 300mW Zener301 FDV301N Fch M SOT23 n-ch 'digital' fet 25V 0.22A302 FDV302P Fch M SOT23 p-ch 'digital' fet 25V 0.13A303 FDV303N Fch M SOT23 n-ch 'digital' fet 25V 0.68A304 FDV304P Fch M SOT23 p-ch 'digital' fet 25V 0.46A331 NDS331N Fch M SOT23 n-ch mosfet 1.3A 20V331 PZM3.3NB1 Phi C SOT346 3.3V 300mW zener332 PZM3.3NB2 Phi C SOT346 3.3V 300mW zener332 NDS332N Fch M SOT23 "p-ch mosfet 0.4A, 1A pk, 20V" 335 NDS335N Fch M SOT23 "n-ch mosfet 70 mA, 1.7A pk, 20V" 336 NDS336N Fch M SOT23 "p-ch mosfet 0.27A, 1.2A pk, 20V" 337 NDS337N Fch M SOT23 "n-ch mosfet 50 mA, 2.5A pk 20V" 338 NDS338N Fch M SOT23 "p-ch mosfet 0.13A, 1.6Apk 20V" 340 FDV340P Fch M SOT23 p-ch mosfet 20V 70 mA351 NDS351N Fch M SOT23 n-ch mosfet 1.1A 30V352 NDS352N Fch M SOT23 p-ch mosfet 0.5A 20V355 NDS355N Fch M SOT23 "n-ch mosfet 0.1A, 1.6A pk 30V" 356 NDS356N Fch M SOT23 "p-ch mosfet 0.3A, 1.1A pk 20V" 357 NDS357N Fch M SOT23 n-ch mosfet 2.5Apk 30V358 NDS358N Fch M SOT23 "p-ch mosfet 0.2A, 1.6A pk 30V" 358 FDN358N Fch M SOT23 p-ch mosfet 0.2A 1.6A pk 30V 360 FDN360P Fch M SOT23 "p-ch mosfet 80mA, 2a PK, 30V"361 PZM3.6NB1 Phi C SOT346 3.6V 300mW Zener 362 PZM3.3NB2 Phi C SOT346 3.6V 300mW Zener 391 PZM3.9NB1 Phi C SOT346 3.9V 300mW Zener 392 PZM3.9NB2 Phi C SOT346 3.9V 300mW Zener 413 FMMT413 Zet N SOT23 npn avalanche 150v 0.1A 415 FMMT415 Zet N SOT23 npn avalanche 260v 0.1A 417 FMMT417 Zet N SOT23 npn avalanche 320v 0.1A 431 PZM4.3NB1 Phi C SOT346 4.3V 0.3W zener432 PZM4.3NB2 Phi C SOT346 4.3V 0.3W zener433 PZM4.3NB3 Phi C SOT346 4.3V 0.3W zener449 FMMT449 Zet N SOT23 npn 50V 1A low Vce sat 451 FMMT451 Zet N SOT23 npn 60V 1A455 FMMT455 Zet N SOT23 NPN 140V 1A458 FMMT458 Zet N SOT23 npn 400V 0.4A471 PZM4.7NB1 Phi C SOT346 4.7V 0.3W zener472 PZM4.7NB2 Phi C SOT346 4.7V 0.3W zener473 PZM4.7NB3 Phi C SOT346 4.7V 0.3W zener491 FMMT491 Zet N SOT23 ZTX 450/451493 FMMT493 Zet N SOT23 ZTX 453494 FMMT494 Zet N SOT23 npn 120V 1A495 FMMT495 Zet N SOT23 npn 170V 1A497 FMMT497 Zet N SOT23 npn 300V 0.5A500 SSTPAD500 Sil J PAD-500 500pA leakage diode 511 PZM5.1NB1 Phi C SOT346 5.1V 0.3W zener512 PZM5.1NB2 Phi C SOT346 5.1V 0.3W zener513 PZM5.1NB3 Phi C SOT346 5.1V 0.3W zener558 FMMT558 Zet N SOT23 pnp 400V 0.15A561 PZM5.1NB1 Phi C SOT346 5.6V 0.3W zener562 PZM5.1NB2 Phi C SOT346 5.6V 0.3W zener563 PZM5.1NB3 Phi C SOT346 5.6V 0.3W zener589 FMMT589 Zet N SOT23 pnp 30V 1A593 FMMT593 Zet N SOT23 ZTX 553605 NDS0605 Fch M SOT23 P-ch mosfet 60V 180mA 605 NDS0605 Fch M - p-ch sw mosfet 60V610 NDS0610 Fch M - p-ch sw mosfet 60V614 FMMT614 Zet N SOT23 sw617 FMMT617 Zet N SOT23 npn sw 15V 3A618 FMMT618 Zet N SOT23 npn sw 20V 2.5A619 FMMT619 Zet N SOT23 npn sw 50V 2A621 PZM6.2NB1 Phi C SOT346 6.2V 0.3W zener622 PZM6.2NB2 Phi C SOT346 6.2V 0.3W zener623 PZM6.2NB3 Phi C SOT346 6.2V 0.3W zener624 FMMT624 Zet N SOT23 -625 FMMT625 Zet N SOT23 -634 FMMT634 Zet N SOT23 100V 0.9A darlington npn651 PZT651 Mot N SOT223 npn 60V 1A681 PZM6.8NB1 Phi C SOT346 6.8V 0.3W zener682 PZM6.8NB2 Phi C SOT346 6.8V 0.3W zener683 PZM6.8NB1 Phi C SOT346 6.8V 0.3W zener701 2N7001 Mot M SOT23 n-ch mosfet702 2N7002 Mot M SOT23 n-ch mosfet 60V 0.11A703 2N7003 Mot M SOT23 n-ch mosfet712 NDS7002A Nat M SOT23 n-ch mosfet 60V 0.28A717 FMMT717 Zet N SOT23 pnp sw 0.625W 2.5A 12V718 FMMT718 Zet N SOT23 pnp sw 0.625W 1.5A 20V720 FMMT720 Zet N SOT23 pnp sw 0.625W 1.5A722 FMMT722 Zet N SOT23 pnp sw723 FMMT723 Zet N SOT23 pnp sw730 FMMT730 Zet N SOT23 ZTX550/551751 PZM7.5NB1 Phi C SOT346 7.5V 0.3W zener752 PZM7.5NB2 Phi C SOT346 7.5V 0.3W zener753 PZM7.5NB3 Phi C SOT346 7.5V 0.3W zener821 PZM8.2NB1 Phi C SOT23 8.2V 0.3W zener822 PZM8.2NB2 Phi C SOT23 8.2V 0.3W zener822 S822T Tfk X - npn RF fT 5.2GHz 6V 8mA823 PZM8.2NB3 Phi C SOT23 8.2V 0.3W zener852 S852T Tfk N SOT23 npn RF fT 5.2GHz 6V 8mA887 S887T Tfk W SOT143 n-ch dg uhf mosfet888 S888T Tfk W SOT142 n-ch dg uhf mosfet911 PZM9.1NB1 Phi C SOT346 9.1V 0.3W zener912 PZM9.1NB2 Phi C SOT346 9.1V 0.3W zener913 PZM9.1NB3 Phi C SOT346 9.1V 0.3W zener05F TSDF1205R Tfk WQ - fT12GHz npn 4V 5mA0A MUN5111DW1 Mot DO SOT363 dual pnp dtr 10k+10k 0A DTC125TUA Roh N SC70 npn dtr R2 100k 50V 100mA 0A DTC125TKA Roh N SC59 npn dtr R2 100k 50V 100mA 0B MUN5112DW1 Mot DO SOT363 dual pnp dtr 22k+22k 0C MUN5113DW1 Mot DO SOT363 dual pnp dtr 47k+47k 0D MUN5114DW1 Mot DO SOT363 dual pnp dtr 10k+47k 0E MUN5115DW1 Mot DO SOT363 dual pnp dtr R1 10k 0F MUN5116DW1 Mot DO SOT363 dual pnp dtr R1 4k7 0G MUN5130DW1 Mot DO SOT363 dual pnp dtr 1k0+1k0 0H MUN5131DW1 Mot DO SOT363 dual pnp dtr 2k2+2k2 0J MUN5132DW1 Mot DO SOT363 dual pnp dtr 4k7+4k7 0K MUN5133DW1 Mot DO SOT363 dual pnp dtr 4k7+47k 0L MUN5134DW1 Mot DO SOT363 dual pnp dtr 22k+47k 0M MUN5135DW1 Mot DO SOT363 dual pnp dtr 2k2+47k 1 (red) BB669 Sie I SOD323 56-2.7 pF varicap10A PZM10NB2A Phi A SOT346 dual ca 10V 0.3W zener10V PZM10NB Phi C SOT346 10V 0.3W zener10Y BZV49-C10 Phi O SOT89 10V 1W zener11A PZM11NB2A Phi A SOT346 dual ca 11V 0.3W zener11A MMBD1501A Nat C SOT23 Si diode 200V 100mA11V PZM11NB Phi C SOT346 11V 0.3W zener11Y BZV49-C11 Phi O SOT89 11V 1W zener12A MMBD1502A Nat K SOT23 Si diode 200V 100mA12A PZM12NB2A Phi A SOT346 dual ca 12V 0.3W zener12E ZC2812E Zet D SOT23 dual series RF schottky15V 20mA12V PZM12NB Phi C SOT346 12V 0.3W zener12Y BZV49-C12 Phi O SOT89 12V 1W zener13A MMBD1503A Nat D SOT23 dual Si diode 200V 100mA13A PZM13NB2A Phi A SOT346 dual ca 13V 0.3W zener13E ZC2813E Zet A SOT23 dual ca RF schottky15V 20mA13s BAS125 Sie C SOT23 Schottky sw 24V 100mA13s BAS125W Sie C SOT323 Schottky sw 24V 100mA13t BC846BPN Phi N SOT363 BC546B13V PZM13NB Phi C SOT346 13V 0.3W zener13Y BZV49-C13 Phi O SOT89 13V 1W zener14A MMBD1504A Nat B - dual cc Si diode 200V 100mA14s BAS125-04 Sie D SOT23 Dual series Schottky 25V 100mA 14s BAS125-04W Sie D SOT323 Dual series Schottky 25V 100mA 15A MMBD1505A Nat A - dual ca Si diode 200V 100mA15A PZM15NB2A Phi A SOT346 dual ca 15V 0.3W zener15s BAS125-05 Sie B SOT23 dual cc Schottky 25V 100mA15s BAS125-05W Sie B SOT323 dual cc Schottky 25V 100mA15V PZM15NB Phi C SOT346 15V 0.3W zener15Y BZV49-C15 Phi O SOT89 15V 1W zener16s BAS125-06 Sie A SOT23 dual ca Schottky 25V 100mA16s BAS125-06W Sie A SOT323 dual ca Schottky 25V 100mA16V PZM16NB Phi C SOT346 16V 0.3W zener16Y BZV49-C16 Phi O SOT89 16V 1W zener17s BAS125-07 Sie S SOT143 dual Schottky 25V 100mA17s BAS125-07W Sie S SOT343 dual Schottky 25V 100mA18V PZM18NB Phi C SOT346 18V 0.3W zener18Y BZV49-C18 Phi O SOT89 18V 1W zener1A BC846A Phi N SOT23 BC546A1A BC846AT Phi N SOT416 BC546A1A FMMT3904 Zet N SOT23 2N39041A MMBT3904 Mot N SOT23 2N39041A IRLML2402 IR F SOT23 n-ch mosfet 20V 0.9A-1A PMST3904 Phi N SOT323 2N39041A- BC846AW Phi N SOT323 BC546A1AM MMBT3904L Mot N SOT23 2N39041Ap BC846A Phi N SOT23 BC546A1At BC846A Phi N SOT23 BC546A1At BC846AW Phi N SOT323 BC546A1B BC846B Phi N SOT23 BC546B1B BC846BT Phi N SOT416 BC546B1B FMMT2222 Zet N SOT23 2N22221B MMBT2222 Mot N SOT23 2N22221B IRLML2803 IR F SOT23 n-ch mosfet 30V 0.9A -1B PMST2222 Phi N SOT323 2N22221B- BC846BW Phi N SOT323 BC546B1Bp BC846B Phi N SOT23 BC546B1Bs BC817UPN Sie N SC74 -1Bt BC846B Phi N SOT23 BC546B1Bt BC846BW Phi N SOT323 BC546B1C FMMT-A20 Zet N SOT23 MPSA201C MMBTA20L Mot N SOT23 MPS39041C IRLML6302 IR F SOT23 p-ch mosfet 20V 0.6A 1Cp BAP50-05 Phi B SOT23 dual cc GP RF pin diode 1Cs BC847S Sie - SOT363 BC4571D MMBTA42 Mot N SOT23 MPSA42 300V npn1D IRLML5103 IR F SOT23 p-ch mosfet 30V 0.6A 1D- BC846W Phi N SOT323 BC4561DN 2SC4083 Roh N - npn 11V 3.2GHz TV tuners 1Dp BC846 Phi N SOT23 BC4561DR MSD1328R Mot N SOT346 npn gp 25V 500mA 1Ds BC846U Sie N SC74 BC4561Ds BC846U Sie - SOT363 BC4561Dt BC846 Phi N SOT23 BC4561Dt BC846W Phi N SOT323 BC4561E BC847A Phi N SOT23 BC547A1E BC847AT Phi N SOT416 BC547A1E FMMT-A43 Zet N - MPSA431E MMBTA43 Mot N SOT23 MPSA43 200V npn1E- BC847A Phi N SOT323 BC547A1EN 2SC4084 Roh N - npn 20V 2.0GHz TV tuners 1Ep BC847A Phi N SOT23 BC547A1ER BC847AR Phi R SOT23R BC547A1Es BC847A Sie N SOT23 BC4571Es BC847AW Sie N SOT323 BC4571Et BC847A Phi N SOT23 BC547A1Et BC847A Phi N SOT323 BC547A1F BC847B Phi N SOT23 BC547B1F BC847BT Phi N SOT416 BC547B1F MMBT5550 Mot N SOT23 2N5550 140V npn1F- BC847BW Phi N SOT323 BC547B1Fp BC847B Phi N SOT23 BC547B1FR BC847BR Phi R SOT23R BC547B1Fs BC847B Sie N SOT23 BC547B1Fs BC847BT Sie N SC75 BC547B1Fs BC847BW Sie N SOT323 BC547B1Ft BC847B Phi N SOT23 BC547B1Ft BC847BW Phi N SOT323 BC547B1FZ FMBT5550 Zet N SOT23 2N5550 140V npn1G BC847C Phi N SOT23 BC547C1G BC847CT Phi N SOT416 BC547C1G FMMT-A06 Zet N SOT23 MPSA061G MMBTA06 Mot N SOT23 MPSA061G- BC847CW Phi N SOT323 BC547C1GM MMBTA06 Mot N SOT23 MPSA061Gp BC847C Phi N SOT23 BC547C1GR BC847CR Phi R SOT23R BC547C1Gs BC847C Sie N SOT23 BC547C1Gs BC847CW Sie N SOT323 BC547C1Gt BC847CW Phi N SOT323 BC547C1GT SOA06 SGS N SOT23 MPSA061H FMMT-A05 Zet N - MPSA051H MMBTA05 Mot N SOT23 MPSA051H- BC847W Phi N SOT323 BC5471Hp BC847 Phi N SOT23 BC5471Ht BC847 Phi N SOT23 BC5471Ht BC847W Phi N SOT323 BC5471HT SOA05 SGS N SOT23 MPSA051J BC848A Phi N SOT23 BC548A1J FMMT2369 Zet N SOT23 2N23691J MMBT2369 Mot N SOT23 MPS23691JA MMBT2369A Mot N SOT23 MPS2369A1Jp BCV61A Phi VQ SOT143 npn current mirror hFe 180 1JR BC848AR Phi R SOT23R BC548A1Js BC848A Sie N SOT23 BC548A1Js BC848AW Sie N SOT323 BC548A1Js BCV61A Sie VQ SOT143 npn current mirror hFe 180 1JZ BC848A Zet N SOT23 BC548A1K BC848B ITT N SOT23 BC548B1K MMBT6428 Mot N SOT23 MPSA18 50V1K FMMT4400 Zet N SOT23 2N44001KM MMBT6428L Mot N SOT23 MPSA18 50V1Kp BC848B Phi N SOT23 BC548B1Kp BCV61B Phi VQ SOT143B npn current mirror hFe 2901KR BC848BR Phi R SOT23R BC548B1Ks BC848B Sie N SOT23 BC548B1Ks BC848BW Sie N SOT323 BC548B1Ks BCV61B Sie VQ SOT143B npn current mirror hFe 2901KZ FMMT4400 Zet N SOT23 2N44001L BC848C ITT N SOT23 BC548C1L MMBT6429 Mot N - MPSA18 45V1L FMMT4401 Zet N - 2N44011L BCV61C Sie VQ SOT143B npn current mirror hFe 5201Lp BC848C Phi N SOT23 BC548C1Lp BCV61C Phi VQ SOT143B npn current mirror hFe 5201LR BC848CR Phi R SOT23R BC548C1Ls BC848C Sie N SOT23 BC548C1Ls BC848CW Sie N SOT323 BC548C1M MMBTA13 Mot N SOT23 MPSA13 darlington1M FMMT-A13 Zet N SOT23 MPSA131Mp BC848 Phi N SOT23 BC5481Mp BCV61 Phi VQ SOT143B npn current mirror1N FMMT-A14 Zet N SOT23 MPSA141N MMBTA14 Mot N SOT23 MPSA14 darlington1N5 ZTX11N15DF Zet N SOT23 npn 15V 3A low saturation V 1P FMMT2222A Zet N - 2N2222A1P MMBT2222A Mot N SOT23 2N2222A1P BC847PN Sie DI - pnp/npn separate pair gp AF1Q MMBT5088 Mot N SOT23 MPSA18 Vce 30V1R MMBT5089 Mot N SOT23 MPSA18 Vce 25V1S MMBT2369A Nat N SOT23 2N2369A 500MHz sw npn1S MSC3130 Mot H SOT346 npn RF fT 1.4GHz 10V1T MMBT3960A Mot N - 2N3960A1U MMBT2484L Mot N SOT23 MPSA181V MMBT6427 Mot H SOT23 2N6426/7 darlington npn1V- BF820W Phi N SOT323 npn 300V 50mA BF4201Vp BF820 Phi N SOT23 npn 300V 50mA BF4201Vt BF820 Phi N SOT23 npn 300V 50mA BF4201Vt BF820W Phi N SOT323 npn 300V 50mA BF4201W FMMT3903 Zet N SOT23 2N39031W - BF822W Phi N SOT323 pnp 300V 50mA BF4211W t BF822W Phi N SOT323 pnp 300V 50mA BF4211Wp BF821 Phi N SOT23 pnp 300V 50mA BF4211Wt BF821 Phi N SOT23 pnp 300V 50mA BF4211X MMBT930L Mot N SOT23 MPS39041Xp BF822 Phi N SOT23 npn 250V 50mA BF4221Xt BF822 Phi N SOT23 npn 250V 50mA BF4221Y MMBT3903 Mot N SOT23 2N39031Yp BF823 Phi N SOT23 pnp 250V 50mA BF4231Yt BF823 Phi N SOT23 pnp 250V 50mA BF4231Z BAS70-06 Zet A SOT23 dual RF CA schottky diode 1Z MMBT6517 Mot N SOT23 2N6517 npn Vce 350V 2 (blue) BAR64-03W Sie I SOD323 pin diode2 (white) BB439 Sie I SOD323 29-5 pF varicap20F TSDF1220 Tfk X SOT143 fT 12GHz npn 6V 20mA 20V PZM20NB Phi C SOT346 20V 300mW zener20Y BZV49-C20 Phi O SOT89 20V 1W zener22V PZM22NB Phi C SOT346 22V 300mW zener22Y BZV49-C22 Phi O SOT89 22V 1W zener24V PZM24NB Phi C SOT346 24V 300mW Zener24Y BZV49-C24 Phi O SOT89 24V 1W zener27V PZM27NB Phi C SOT346 27V 300mW Zener27Y BZV49-C27 Phi O SOT89 27V 1W zener2A MMBT3906L Mot N SOT23 2N39062A MMBT3906W Mot N SOT323 2N39062A FMMT3906 Zet N SOT23 2N39062A4 PZM2.4NB2A Phi A SOT346 dual 2.4V cc Zener 2A7 PZM2.7NB2A Phi A SOT346 dual 2.7V cc Zener 2B BC849B ITT N SOT23 BC549B2B FMMT2907 Zet N SOT23 2N29072B MMBT2907 Mot N SOT23 MPS29072B- BC849BW Phi N SOT323 BC549B2Bp BC849B Phi N SOT23 BC549B2BR BC849BR Phi R SOT23R BC549B2Bs BC849B Sie N SOT23 BC549B2Bs BC849BW Sie N SOT323 BC549B2Bt BC849BW Phi N SOT323 BC549B2BZ FMMT2907 Zet N SOT23 2N29072C BC849C ITT N SOT23 BC549C2C MMBTA70 Mot N SOT23 MPSA702C- BC849CW Phi N SOT323 BC549C2Cp BC849C Phi N SOT23 BC549C2CR BC849CR Phi R SOT23R BC549C2Cs BC849C Sie N SOT23 BC549C2Cs BC849CW Sie N SOT323 BC549C2Ct BC849C Phi N SOT23 BC549C2Ct BC849CW Phi N SOT323 BC549C2CZ FMMTA70 Zet N SOT23 MPSA702D MMBTA92 Mot N SOT23 MPSA92 pnp Vce 300V 2E MMBTA93 Mot N SOT23 MPSA93 pnp Vce 200V2E FMMT-A93 Zet N SOT23 MPSA932F BC850B ITT N SOT23 BC550B2F FMMT2907A Zet N SOT23 2N2907A2F MMBT2907A Mot N SOT23 MPS2907A2F MMBT2907AW Mot N SOT323 MPS2907A2F- BC850BW Phi N SOT323 BC550B2Fp BC850B Phi N SOT23 BC550B2FR BC850BR Phi R SOT23R BC550B2Fs BC850B Sie N SOT23 BC550B2Fs BC850BW Sie N SOT323 BC550B2Ft BC850B Phi N SOT23 BC550B2Ft BC850BW Phi N SOT323 BC550B2G BC850C ITT N SOT23 BC550C2G FMMT-A56 Zet N SOT23 MPSA562G MMBTA56 Mot N SOT23 MPSA562G- BC850CW Phi N SOT323 BC550C2GM MMBTA56 Mot N SOT23 MPSA562Gp BC850C Phi N SOT23 BC550C2GR BC850CR Phi R SOT23R BC550C2Gs BC850C Sie N SOT23 BC550C2Gt BC850C Phi N SOT323 BC550C2Gt BC850CW Phi N SOT323 BC550C2GT SOA56 SGS N SOT23 MPSA562H FMMT-A55 Zet N SOT23 MPSA552H MMBTA55 Mot N SOT23 MPSA552HT SOA55 SGS N SOT23 MPSA552J MMBT3640 Mot N SOT23 MPS3640 pnp sw2K FMMT4402 Zet N SOT23 2N44022K MMBT8598 Mot N - 2N4125 pnp 60V2L MMBT5401 Mot N SOT23 2N5401 pnp 150V2L FMMT4403 Zet N SOT23 2N44032M FMMT5087 Zet N SOT23 2N50872M MMBT404 Mot N SOT23 pnp-chopper 24V 150mA2N MMBT404A Mot N SOT23 pnp-chopper 35V 150mA2N0 ZXT11N20DF Zet N SOT23 npn 20V 2.5A low sat switch 2P FMMT2222R Zet R SOT23R 2N22222P MMBT5086 Mot N SOT23 2N50862Q MMBT5087 Mot N SOT23 2N50872R HSMS-8102 HP Z SOT23 10-14GHz schottky mixer pair 2T SO4403 SGS N SOT23 2N44032T MMBT4403 Mot N SOT23 2N44032T HT2 Zet N SOT23 pnp 80V 100mA2U MMBTA63 Mot N SOT23 MPSA63 darlington2V MMBTA64 Mot N SOT23 MPSA64 darlington2V4 PZM2.4NB Phi C SOT346 2.4V 300mW Zener。
MMBT3906 PDF规格书
VCB/ VEB
Cob-200
f=1MHz IE=0/IC=0 Ta=25℃
1 -0.1
250
200
150
100
50
0 0
-0.3
-1
-3
REVERSE VOLTAGE V (V)
PC —— Ta
.
-10
-20
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
MMBT3906 PNP Transistors
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
1
2
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
0.55
0.4
Unit: mm
0.1 +0.05 -0.01
-4
-8
-12
-16
-20
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
-300
-100
Ta=100℃ Ta=25℃
-30
-10 -1
-3
-10
-30
COLLECTOR CURRENT IC (mA)
-100
IC —— VBE
COMMON EMITTER
VCE=-1V
IC=-50 mA, IB= -5mA
IC= -10 mA, IB= -1mA VBE(sat)
MMBT3906DW PDF规格书
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3906 TRANSISTOR
(PN P)
FEATURES
z As complementary type, the NPN transistor
MMBT3904 is Recommended
z Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units
V CBO
Collector-Base Voltage -40 V V CEO
Collector-Emitter Voltage -40 V V EBO
Emitter-Base Voltage -5 V I C
Collector Current -Continuous -0.2 A P C
Collector Dissipation 0.2 W R θJA
Thermal resistance junction to ambient 625 ℃/W T J
Junction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter
Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage
V (BR)CBO I C =-10μA, I E =0 -40
V Collector-emitter breakdown voltage
V (BR)CEO I C = -1mA, I B =0 -40
V Emitter-base breakdown voltage
V (BR)EBO I E = -10μA, I C =0 -5 V Collector cut-off current
I CBO V CB = -40 V, I E =0 -100nA Collector cut-off current
I CEX V CE =-30V, V BE(off)=-3V -50 nA Emitter cut-off current
I EBO V EB = -5V, I C =0 -100nA h FE1 V CE =-1V, I C = -10mA 100 300 h FE2 V CE = -1V, I C =-50mA 60 DC current gain
h FE3 V CE = -1V, I C =-100mA 30 Collector-emitter saturation voltage
V CE(sat)1 I C =-50mA, I B =-5mA -0.3 V Base-emitter saturation voltage
V BE(sat) I C = -50mA, I B =-5mA -0.95V Transition frequency
f T V CE =-20V,I C =-10mA,f =100MHz 300 MHz Delay Time
td 35 nS Rise Time
tr V CC =-3V,V BE =-0.5V I C =-10mA, I B1=I B2=-1mA 35 nS Storage Time
ts 225 nS Fall Time tf V CC =-3V,I C =-10mA I B1=I B2=-1mA 75 nS CLASSIFICATION OF h FE(1)
HFE 100-300 RANK L
H RANGE 100–200 200–300
D,May,2012
【南京南山半导体有限公司 — 长电贴片三极管选型资料】
-10
-100-1-10200
400
6000255075100125150-0.1-1-10-100-0
-20
-40-60-80-100
h ——I -30
-300
C
O L L E C T O R -E M I T T E R S A T U R A T I O N V O
L
T
A
G E
V C
E s
a t
(m V
)
-500-3-30-50
T
R A
N S
I T I O
N
F
R
E Q U
E
N C Y
f
T
(M H z )COLLECTOR CURRENT I C (mA)MMBT3906
Typical Characterisitics AMBIENT TEMPERATURE T a ()℃-30-3
-0.3
C O L L E C T O R C U R R E N T I C
(m A )C O L L E C T O R C U R R E N T I C
(m A )
D,May,2012
【南京南山半导体有限公司 — 长电三极管选型资料】
The bottom gasket
The top gasket
3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box
with the tape Seal the box
with the tape Stamp “EMPTY”
on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。