可控硅模块SKKT162

Fig. 3L Power dissipation of two modules vs. direct current
Fig. 3R Power dissipation of two modules vs. case temp.
2
06-02-2004 NOS
© by SEMIKRON
SKKT 162, SKKH 162
®
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Features




4
06-02-2004 NOS
© by SEMIKRON
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Fig. 8 Surge overload current vs. time
3
06-02-2004 NOS
© by SEMIKRON
SKKT 162, SKKH 162
Fig. 4L Power dissipation of three modules vs. direct and rms current
Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
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Symbol
Conditions

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SKKT 162, SKKH 162
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Fig. 1R Power dissipation per thyristor vs. ambient temp.
Fig. 2L Power dissipation per module vs. rms current
Fig. 2R Power dissipation per module vs. case temp.

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Fig. 9 Gate trigger characteristics
Dimensions in mm
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.

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SKKH
1
06-02-2004 NOS
© by SEMIKRON
SKKT 162, SKKH 162
Fig. 1L Power dissipation per thyristor vs. on-state current

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Typical Applications %&
Units
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SEMIPACK 2 Thyristor / Diode Modules
SKKT 162 SKKH 162
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Values
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