PTVSHC3D12VUH--EOS浪涌防护器件

PTVSHC3D12VUH

The PTVSHC3D12VUH TVS protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The PTVSHC3D12VUH protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The PTVSHC3D12VUH is available in a SOD-323 package with working voltages of 12 volt. It is used to meet the ESD immunity requirements of IEC 61000-4-2, (±30kV air, ±30kV contact discharge)

¾ 2000W Peak pulse power per line (t P = 8/20μs) ¾ SOD-323 package

¾ Response time is typically < 1 ns ¾ Protect one I/O or power line ¾ Low clamping Voltage ¾ RoHS compliant

¾ Transient protection for data lines to IEC 61000-4-2(ESD)

±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any

¾ Qualified max reflow temperature:260℃ ¾ Pure tin plating: 7 ~ 17 um ¾

Pin flatness :≤3mil

¾ Cell phone handsets and accessories ¾ Personal digital assistants (PDA’s) ¾ Notebooks, desktops, and servers ¾ Portable instrumentation ¾ Cordless phones ¾ Digital cameras ¾

Peripherals ¾

MP3 players

Symbol Parameter

V RWM Peak Reverse Working Voltage

I R Reverse Leakage Current @ V RWM

V BR Breakdown Voltage @ I T

I T Test Current

I PP Maximum Reverse Peak Pulse Current

V C Clamping Voltage @ I PP

P PP Peak Pulse Power

C J Junction Capacitance

Current

I F Forward

V F Forward Voltage @ I F

Parameter Symbol Conditions Min. Typ. Max. Units

V Peak Reverse Working Voltage V RWM12 Breakdown Voltage V BR I t =1mA 13.5 15 V Reverse Leakage Current I R V RWM =12V 1 μA Clamping Voltage V C I PP=80A t P = 8/20μs 26 30 V

Junction Capacitance C j V R=0V f =1MHz 340 395 450 pF

Rating Symbol Value Units

Peak Pulse Power ( t P = 8/20μS ) P pp 2000 W

Lead Soldering Temperature T L260 (10 sec) ℃

Operating Temperature T J-55 to +125 ℃

Storage Temperature T STG-55 to +150 ℃

Fig 1.Pulse Waveform Fig 2.Power Derating Curve

Fig 3. Clamping voltage vs. Peak pulse current Fig 4. Capacitance vs. Reveres voltage

I P P – P e a k P u l s e C u r r e n t - % o f I P P

100

80

60

40

20

100

80

60

40

20

0 5 10

15 20 25 30

25 50 75 100 125 150

t - Time -μs

% O f R a t e d P o w e r

T L – Lead Temperature - ℃

t P =20μs(I PP /2)

t f =8μs

V C -C l a m p i n g V o l t a g e (V )

0 3

6 9 12 13.5

C -J u n c t i o n c a p a c i t a n c e (p F )

I PP -Peak pulse current (A) V R -Reverse voltage (V)

1 10 100 1000

10

100

1000

10000

P e a k P u l s e P o w e r (W )

Pulse Duration(us)