SKKT_106可控硅

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1
09-03-2004 NOS
© by SEMIKRON
BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 1L Power dissipation per thyristor vs. on-state current
Fig. 1R Power dissipation per thyristor vs. ambient temp.
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2+*/ 2% 201. 2+.1 B /+ /+(+C) + 2%%7 20% (;) (,;) G 2 2 /E+ 2E+ /E% 2E% 0 (H) 0 (H) 0 (H) 0 (H ) +, + / 1 1 &

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#6 7 7 4 ; 4

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SKKT
SKKH
Fig. 3R Power dissipation of two modules vs. case temp.
2
09-03-2004 NOS
© by SEMIKRON
SKKT 106, SKKT 106B, SKKH 106 THYRISTOR
Fig. 4L Power dissipation of three modules vs. direct and rms current
Symbol
Conditions

4567 + 3 5# (466) 8&7 -";456?7 + 3 "# 8&7 <$ ; <! -4!;$66?7 + 3 "# 8&7 <$ ; <! -";456?7 + 3 "# 8&7 @4 ; @" +, 3 $# 8&7 46 +, 3 4"6 8&7 46 +, 3 $# 8&7 5" 46 +, 3 4"6 8&7 5" 46 +, 3 $# 8&7 2+ 3 "66 * +, 3 4"6 8& +, 3 4"6 8& +, 3 4"6 8&7 /0% 3 /0017 /%% 3 /%01 +, 3 $# 8&7 2E 3 4 *7 E; 3 4 *;F /% 3 6!> A /%01 +, 3 4"6 8& +, 3 4"6 8& +, 3 4"6 8& +, 3 $# 8&7 ; +, 3 $# 8&7 0E 3 "" D7 ; +, 3 $# 8&7 +, 3 $# 8&7 +, 3 4"6 8&7 +, 3 4"6 8&7
Dimensions in mm
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* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
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4567 ; 4$67 ; ;
Values
46! (>5 ) 4=# ; 456 496 ;$!6 $66 ; " A 4=6 $$#6 4966 $#666 45666 4!# 69 $ $6 4 $ 4#6 4666 466 4#6 ; $#6 "66 ; !66
Units
* * * * * * *B *B / / D * F F *;F /;F F * * / * / * :;@ :;@ :;@ :;@ 8& 8& /J N N ; B
SEMIPACK 1 Thyristor / Diode Modules
SKKT 106 SKKT 106B SKKH 106
) 2+*/ 3 46! * (
4567 + 3 5# 8&) .::+ 46!;65 .::+ 46!<65 .:: 46!;65 .::+ 46!;4$ .::+ 46!<4$ .:: 46!;4$ .::+ 46!;4= .::+ 46!<4= .:: 46!;4= .::+ 46!;4! .::+ 46!<4! .:: 46!;4! .::+ 46!;45 .::+ 46!<45 .:: 46!;45
4
09-03-2004 NOS
© by SEMIKRON
Fig. 8 Surge overload current vs. time
3
09-03-2004 NOS
© by SEMIKRON
BRIDGE,SCR,BRIDGE RECTIFIER,DIODE,THYRISTOR,MODULE
Fig. 9 Gate trigger characteristics
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4#6 6$# ! 6$5 ; 64= 6" ; 64# 6"$ ; 64! 6$ ; 64 H =6 I 4"6 H =6 I 4$# "!66 ; "666 # L 4# M4) " L 4# M # A 954 9# * =! * =5 * =>
Fig. 2L Power dissipation per module vs. rms currentwenku.baidu.com
Fig. 2R Power dissipation per module vs. case temp.
Fig. 3L Power dissipation of two modules vs. direct current
Features





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SKKT 106, SKKT 106B, SKKH 106 THYRISTOR
/0.1 / 966 4"66 4#66 4>66 4966 /001 /%01 / 566 4$66 4=66 4!66 4566 2+01. 3 456 * ( ,


Fig. 4R Power dissipation of three modules vs. case temp.
Fig. 5 Recovered charge vs. current decrease
Fig. 6 Transient thermal impedance vs. time
Fig. 7 On-state characteristics
Typical Applications* %&

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