S9013三极管规格书：三极管S9013参数与封装尺寸

VCB=6V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK RANGE
L 120-200
H 200-350
1. BASE 2. EMITTER 3. COLLECTOR
Min
Typ
Max Unit
40
V
25
V
5
V
0.1
uA
0.1
uA
0.1
uA
120
400
40
0.6
V
1.2
V
0.7
V
150
MHz
8
pF
J 300-400
B,Nov,2011
Typical Characterisitics
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
100 80 60 40 20 0 0
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
www.nscn.com.cn
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013 TRANSISTOR (NPN)
0°
8°
Dimensions In Inches
Min.
Max.
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP.
0.071
0.079
0.022 REF.
0.012
0.020
f —— I
T
C
VCE=6V Ta=25℃
CAPACITANCE C (pF)
BASE-EMITTER SATURATION VOLTAGE VBEsat (V)
DC CURRENT GAIN hFE
1000
100
10 1
1.2 0.8 0.4 0.0
1 100 30
10 3 1 0.1 400 300
SOT–23
FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity.
MARKING: J3
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
500 300
Static Characteristic
400uA 350uA 300uA
COMMON EMITTER Ta=25℃
250uA
200uA 150uA
100uA
4
8
12
16
COLLECTOR-EMITTER VOLTAGE VCE (V)
IB=50uA
20
V
—— I
CEsat
C
100
Ta=100℃
COLLECTOR CURRENT IC (mA)
S9013
h —— I
FE
C
COMMON EMITTER VCE=1V
Ta=100℃
Ta=25℃
3
10
30
100
500
COLLECTOR CURRENT IC (mA)
V
—— I
BEsat
C
Ta=25℃ Ta=100℃
3
10
30
1Байду номын сангаас0
COLLECTOR CURRENT IC (mA)
Dimensions In Millimeters
Min.
Max.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP.
1.800
2.000
0.550 REF.
0.300
0.500
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Symbol
Test conditions
V(BR)CB= O IC=0.1mA, IE 0
V(B= R)CEO IC=1mA, IB 0
V(BR)EB= O IE=0.1mA, IC 0
IC= BO VCB=40V, IE 0
IC= EO VCE=20V, IB 0
= IEBO VEB=5V, IC 0
30
Ta=25℃
10
1
3
10
30
100
COLLECTOR CURRENT IC (mA)
I —— V
100
C
BE
COMMON EMITTER
VCE=1V
30
Ta=100℃
10
β=10
500
3
1
Ta=25℃
0.3 0.1
0.0 1000
300
0.2
0.4
0.6
0.8
1.0
BASE-EMMITER VOLTAGE VBE (V)
Symbol
Parameter
Value
VCBO VCEO VEBO
IC PC RΘJA Tj Tstg
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
β=10
500
C / C —— V / V
ob ib
CB EB
Cib
f=1MHz IE=0/ IC=0 Ta=25℃
Cob
0.3
1
3
REVERSE VOLTAGE V (V)
P —— T
C
a
10
20
100
200
COLLECTOR POWER DISSIPATION PC (mW)
TRANSITION FREQUENCY fT (MHz)
40 25 5 500 300 416 150 -55～+150
Unit V V V mA
mW ℃/W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
hFE(1)
VCE== 1V, IC 50mA
hFE(2)
VC= E=1V, IC 500mA
VCE(sat) IC== 500mA, IB 50mA
VBE(sat) IC== 500mA, IB 50mA
VBE
VCB=1V,IC= 10mA,
fT
VCE=6V,IC=20mA, f=30MHz
Cob
0°
8°
The bottom gasket
3000×15 PCS
Label on the Reel 3000×1 PCS
Seal the box with the tape
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape
100
10
10
30
100
COLLECTOR CURRENT IC (mA)
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
B,Nov,2011
【 南京南山半导体有限公司 — 长电三极管选型资料】
www.nscn.com.cn
Symbol
A A1 A2 b c D E E1 e e1 L L1 θ
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm