微电子专业英语
微电子专业英语词汇
微电子专业英语词汇每一个专业都有其专用的词汇，以下是的微电子专业英语词汇，欢迎参考阅读!1. aeptance testing (WAT: wafer aeptance testing)2. aeptor: 受主，如B，掺入Si中需要承受电子3. ACCESS：一个EDA（Engineering Data Analysis）系统4. Acid：酸5. Active device：有源器件，如MOS FET（非线性，可以对信号放大）6. Align mark(key)：对位标记7. Alloy：合金8. Aluminum：铝9. Ammonia：氨水10. Ammonium fluoride：NH4F11. Ammonium hydroxide：NH4OH12. Amorphous silicon：α-Si，非晶硅（不是多晶硅）13. Analog：模拟的14. Angstrom：A（1E-10m）埃15. Anisotropic：各向异性（如POLY ETCH）16. AQL(Aeptance Quality Level)：承受质量标准，在一定采样下，可以95%置信度通过质量标准（不同于可靠性，可靠性要求一定时间后的失效率）17. ARC(Antireflective coating)：抗反射层（用于METAL等层的光刻）18. Antimony(Sb)锑19. Argon(Ar)氩20. Arsenic(As)砷21. Arsenic trioxide(As2O3)三氧化二砷22. Arsine(AsH3)23. Asher：去胶机24. Aspect ration：形貌比（ETCH中的深度、宽度比）25. Autodoping：自搀杂（外延时SUB的浓度高，导致有杂质蒸发到环境中后，又回掺到外延层）26. Back end：后段（CONTACT以后、PCM测试前）27. Baseline：标准流程28. Benchmark：基准29. Bipolar：双极30. Boat：扩散用（石英）舟31. CD：（Critical Dimension）临界（关键）尺寸。
半导体、微电子专业英语单词（2）
半导体、微电子专业英语单词（2）半导体、微电子专业英语单词汇总79. flatband capacitanse：平带电容80. flatband voltage：平带电压81. flow coefficicent：流动系数82. flow velocity：流速计83. flow volume：流量计84. flux：单位时间内流过给定面积的颗粒数85. forbidden energy gap：禁带86. four-point probe：四点探针台87. functional area：功能区88. gate oxide：栅氧89. glass transition temperature：玻璃态转换温度90. gowning：净化服91. gray area：灰区92. grazing incidence interferometer：切线入射干涉仪93. hard bake：后烘94. heteroepitaxy：单晶长在不同材料的衬底上的外延方法95. high-current implanter：束电流大于3ma的注入方式，用于批量生产96. hign-efficiency particulate air(HEPA) filter：高效率空气颗粒过滤器，去掉99.97%的大于0.3um的颗粒97. host：主机98. hot carriers：热载流子99. hydrophilic：亲水性100. hydrophobic：疏水性101. impurity：杂质102. inductive coupled plasma(ICP)：感应等离子体103. inert gas：惰性气体104. initial oxide：一氧105. insulator：绝缘106. isolated line：隔离线107. implant : 注入108. impurity n : 掺杂109. junction : 结110. junction spiking n :铝穿刺111. kerf :划片槽112. landing pad n AD113. lithography n 制版114. maintainability, equipment : 设备产能115. maintenance n :保养116. majority carrier n :多数载流子117. masks, device series of n : 一成套光刻版118. material n :原料119. matrix n 1 :矩阵120. mean n : 平均值121. measured leak rate n :测得漏率122. median n :中间值123. memory n : 记忆体124. metal n :金属125. nanometer (nm) n ：纳米126. nanosecond (ns) n ：纳秒127. nitride etch n ：氮化物刻蚀128. nitrogen (N2 ) n：氮气，一种双原子气体129. n-type adj ：n型130. ohms per square n：欧姆每平方: 方块电阻131. orientation n：晶向，一组晶列所指的方向132. overlap n ：交迭区133. oxidation n ：氧化，高温下氧气或水蒸气与硅进行的化学反应134. phosphorus (P) n ：磷，一种有毒的非金属元素135. photomask n ：光刻版，用于光刻的版136. photomask, negative n：反刻137. images：去掉图形区域的版138. photomask, positive n：正刻139. pilot n ：先行批，用以验证该工艺是否符合规格的片子140. plasma n ：等离子体，用于去胶、刻蚀或淀积的电离气体141. plasma-enhanced chemical vapor deposition (PECVD) n：等离子体化学气相淀积，低温条件下的等离子淀积工艺142. plasma-enhanced TEOS oxide deposition n：TEOS淀积，淀积TEOS的一种工艺143. pn junction n：pn结144. pocked bead n：麻点，在20X下观察到的吸附在低压表面的水珠145. polarization n：偏振，描述电磁波下电场矢量方向的术语146. polycide n：多晶硅 /金属硅化物，解决高阻的复合栅结构147. polycrystalline silicon (poly) n：多晶硅，高浓度掺杂(> 5E19)的硅，能导电。
微电子专业英语
Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum（Aluminium）铝Aluminum - oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic （AS）砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish （CMP）化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio （CMRR）共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（CMOS）互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design （CAD）/test（CAT）/manufacture（CAM）计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底）Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel （dB）分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade）/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS（DMOS）双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation（ship）爱因斯坦关系Electric Erase Programmable Read Only Memory（E2PROM）一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E-K）图Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic （低）共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM （EPROM）可搽取（编程）存储器Error function complement （erfc）余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide（GaAs）砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium（Ge）锗Graded 缓变的Graded （gradual）channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.（H-MOS）高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide （ITO）铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET（JFET）结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED）发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure （MTBF）平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor（MOST ）MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module（MCM）多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺（photo）resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential （电）势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board（PCB）印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator（PWM）脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4）氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat（PT）热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor（TFT）薄膜晶体Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging（stress）晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel（ing）隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间Ultraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence（value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿。
电子科学与技术专业英语(微电子技术分册)第一章译文
——电材专业英语课文翻译Semiconductor Materials• 1.1 Energy Bands and Carrier Concentration• 1.1.1 Semiconductor Materials•Solid-state materials can be grouped into three classes—insulators(绝缘体）, semiconductors, and conductors. Figure 1-1 shows the electrical conductivities δ(and the corresponding resistivities ρ≡1/δ)associated with(相关）some important materials in each of three classes. Insulators such as fused（熔融）quartz and glass have very low conductivities, in the order of 1E-18 to 1E-8 S/cm;固态材料可分为三种：绝缘体、半导体和导体。
图1－1 给出了在三种材料中一些重要材料相关的电阻值（相应电导率ρ≡1/δ)。
绝缘体如熔融石英和玻璃具有很低电导率，在10-18 到10-8 S/cm;and conductors such as aluminum and silver have high conductivities, typically from 104 to 106 S/cm. Semiconductors have conductivities between those of insulators and those of conductors. The conductivity of a semiconductor is generally sensitive to temperature, illumination（照射）, magnetic field, and minute amount of impurity atoms. This sensitivity in conductivity makes the semiconductor one of the most important materials for electronic applications.导体如铝和银有高的电导率，典型值从104到106S/cm;而半导体具有的电导率介乎于两者之间。
微电子技术专业英语
Aabruptly 立刻abundance 分布量accelerated 加速accommodat接纳，供应adjacent 接近的affinity 倾向alloying 合金align 排列amorphous type不定形amplifier 放大器analog 模拟的anisotropic 各向异性的anncal 退火annihilate 消灭approximate 近似；相符性arbitary 任意的arsenic 砷at rest 静止avalanche 雪崩Bbarrier 势垒base 基极bias 偏压bipolar junction transistor双极性晶体管（BJT）biasing 偏置boron 硼boundary 边界bulk 体积buried layer 埋层Ccapacitance 电容channel 沟道coefficient 系数collision 碰撞collector 集电极compensate 补偿composite 复合的concentration 浓度conductor 导体conduction band 导带conductivity 磁场configuration 结构constant 常数constitute 构成constituent 要素consumption 功耗constant 恒定core 核心corresponding 对应的correspond 相一致covalent band 价带critical 临界crystal 晶体crystal lattice 晶格crystal orientation 晶向cube 立方cubic 立方的current 电流cutoff 节制DDangling bond 悬挂键dashed line 虚线decay 衰减deficiency 缺乏degenerate 简并density 浓度deplete 耗尽depletion region 耗尽层device 器件dielectic constant 介电常数dielectic 绝缘体，电介质diffusion 扩散dimension 量纲diode 二极管discontinuity 中断discrete 离散的displacement 位移distribution 分布donor 施主doping level 掺杂浓度dopant 掺杂剂drain 漏drift 漂移duplicate 复制Eeffective potential energy有效势能electrode 电极electrostatic 静电学的election 电子自旋element semiconductor 元素半导体elevate 提升emitter 发射极epitaxy 外延equidistant 等距的equilibrium 平衡excess 过盛excitation 激发external 外部的extracted 抽取extrapotation 外推extrinic 非本征FFabrication制作finite 限定的figure of merit 品质因子flat band voltage平带电压flexibility 适应性flux 流动fraction 比例forbidden region 禁带forward bia 正向偏压Ggallium 镓gaseous 气态的gate 栅；门germanium 锗generate 生成graded 缓变gradient 梯度Hhomejunction同质节Iillumination 光照impact ionization 碰撞电离implantation 注入impurity 杂质incident ion 射入离子incorporate 合并infinite 无限的influx 流入inherently 本身insulator 绝缘体interaligitated structure 叉指型结构interatomic 原子间的intercept 截距interest 意义interface 界面，接口integration 积分intrinsic 本征inverted 反向inversion layer反型层ionized 电离isolated 孤立的isotropic 各向同性JJoule 焦耳KKinetic 运动的LLateral 侧面的leakage 漏load 负载lowercase 小写的MMacroscopic 宏观的mass 质量magnitude 数值上MBE 分子束外延merit 优点mfinity 无穷大microsopic微观的migration 迁移modulation 调制momentum 要素multiplication 倍增Nnet doping 净掺杂neutral 中性normalized 归一化nucleus 核OOhmis 欧姆的optical 光学orbit 轨道，转orientation 倾向性oscillator 振荡器oscilloscope 示波器overlap 重叠Pparallel resistant 并联电阻parasitic 寄生的parameters 参数peak 峰值permittivity 介电常数perpendicular竖直的penetrate 进入，渗透photoconductivity光电导性photon 光子polysilicon 多晶硅practical 替代predominate 控制probability 几率proportional 比例的profile 分布pn junction PN结pulse 脉冲Qquantum mechanics 量子力学qualitative 定性Rrange 射程ratio 比值rearranging 排列reclaimable 可回收reciprocal 互惠的recombination center 复合中心resistivity 抵抗力response 响应reverse bia 正向偏压Ssaturation 饱和区scatter 散射self-aligned 自对准的semilog 半对数short-circuiting 短路simulation 仿真slope 斜率solid-state 固体材料solubility 溶度source 源space-charge 空间电荷spatial 空间的stationary 固定的step junction 突变节substrate 衬底，基片subthreshold 亚阈值supersede 替代supply 电源switch 开关Tterminal voltage 端电压tern 项tetrahedron 四分体thermal 热量的traverse 横越transit 运输transiston region 过渡区transistor 晶体管transconduction跨导transconductance互导transiet 瞬时的trunnel 遂穿Uuniform 均匀Vvacancy 空缺vaccum 真空valence band 价带valid 有效的vertical 直立的velocity 速率vibration 振动voltage 电压varies exponentially 指数变化Wwell 阱wafer 晶片work function功函数。
微电子专业英语
Diffusion扩散，传播diffusion furnaces扩散炉facility设施设备quartz石英Tube管子，管，真空管diameter直径transformer变压器pipe管子；笛子Valve阀门；阀flowmeter流量计resemble像；很像wafers晶圆profile规范；概要Vent通风口；出口；排放exhaust排气；排放装置etiquette礼仪；礼节chain smoker老烟枪optics光学MIT麻省理工学院align排列；对准mesa transistor台面型晶体管geometry几何学，图形emitter发射者；发射体base基区emulsion感光剂；乳状液masking plate掩模板expose使··曝光mercury lamp汞灯aluminum铝ohmic欧姆的ohmic contanct欧姆接触moderately相当地dope掺杂antimony锑boron硼yield成品率prevail流行；成功；优先tentative试验的；暂时的advertising campaign广告宣传silicon硅portfolio业务量despite尽管diffusion capacitance扩散电容quartz crystal石英晶体tube diode真空二极管Program Overview and File程序概要和文件exhaust valve排气阀exhaust algorithm穷举算法chain break链中断optics design光学设计mesa diffusion台面扩散Geometry Theorem Prover几何学定理证明emitter follower射极跟随器Base Band基带Mercury tank水银槽ohmic resistance 欧姆电阻doped oxide diffusion掺杂氧扩散Yield criteria合格率标准tentative table of equipment 试行设备表silicon MESFET process硅金属半导体场效应晶体管工艺epitaxial（晶体）取向附生的；外延的micrologic显微科学的WESCON(Western Electronic Show and Convention)西部电子展览和会议shift register移位寄存器inverter反相器order of magnitude数量级isolation绝缘；隔离isolation diffusion隔离扩散result in造成warpage热变形；扭曲IC(integrated circuits)集成电路obsolete废弃的，过时的RTL(resistor transistor logic)电阻晶体管逻辑（电路）DTL（diode transistor logic）二极管晶体管逻辑（电路）unilaterally单方地IRE（Institute of Radio Engineers）无线电工程师学会NAND gate与非门discrete分立的discrete component分立元件the crowd大众Revenue收入hide躲藏；隐瞒reliability可靠性vibration振动；颤动vibration test振动测试explosive爆炸的trigger触发；发射capacity容量estimate估计climb on the bandwagon赶时髦cycle time周期overall从头到尾；总的inertial guidance惯性制导flight control飞行控制ground地Texas Instruments德克萨斯（德州）仪器RCA美国无线电公司General Electric通用电气公司Autonetics自动控制学qualification资格；限制；执照shift register latch移位寄存器锁存电路isolation barrier隔离势垒isolation region隔离区isolation masking隔离掩蔽isolation leakage隔离漏流discrete IC分立集成电路revenue bond收益债券revenue tax财政关税hidden field隐式字段reliability statistics可靠性统计vibration noise振动干扰inertial mass惯性质量ground base共基极接地qualification test合格性试验ground circuit接地电路qualification time鉴定时间qualification phase限定相位mulish执拗的unyielding不易弯曲的obstinate顽固的persistent坚持不懈的Utah犹他州Salt Lake City盐湖城solid state固态responsibility责任priority优先权field effect场效应FET场效应晶体管originate from源于doctorate博士学位flip-flop触发器amplifier放大器gate栅oxide氧化物aluminum铝deposit放置，淀积vaccum真空oxidation氧化threshold voltage阈值电压drain漏fabrication制造instability不稳定性pinch-off夹断pinch-off voltage夹断电压alloy合金standby备用的power density功率密度triode三级真空管circuitry电路packing density存储密度patent专利complementary互补的persistent registration持久性定位solid unit固态器件gate region栅区gate oxide thickeness栅氧化层厚度vacuum tube真空管oxidation film氧化膜oxidation mask氧化掩膜threshold control阈值控制alloying reaction熔合反应Standby Power Supply备用电源general perpose通用的operational amplifier运算放大器industry standards工业标准plug-in插入式的overload protection过载保护freedom from没有identical to和··完全不同operational control unit运算控制单元plug and play即插即用latch mode锁存模式overload circuit breaker过载断路器identical operation恒等运算Schottky-clamped肖特基箝位memory-decoding存储译码data routing数据选择propagation delay time传播延迟时间access time存取时间negligible可忽略不计的demultiplexing多路输出选择Schottky Clamped Transistor肖特基箝位晶体管Schottky Barrier肖特基势垒Access Register存取寄存器Power功耗channel通道serial串行ADC模数转换器data-acquisition数据采集Multiplexer多路复用器bandwidth带宽track/hold采样/保持interface接口Ultra极端的single +5V supply +5V单电源analog input模拟输入single-ended单端Differential差分的unipolar/bipolar单极的/双极的TM(trade mark)商标strobe选通Family系列digital signal processor数字信号处理器successive逐次的approximation 逼近的reference基准drift漂移ppm（parts per million）百万分之几buffer缓冲Amplifier放大器gain增益trim微调LSB（least significant bit）最低有效位pin引脚Quantization error量化误差power-down断电power up加电shut down关闭sampling rate抽样率DIP（dual in-line package）双列直插式封装SO package（small outline package）小外形SOP SSOP（shrink-small-outline package）缩小型SOP anti-aliasing filter抗混叠滤波器data sheet数据表capacitor电容float悬空Falling edge下降沿impedance阻抗clock period时钟周期rising edge上升沿Duty cycle占空比circuitry电路flexible可变的microprocessor微处理器block diagram 框图pseudo伪的differential input差分输入comparator比较器equivalent相等的With respect to关于span跨越cycle周期restore恢复binary-weighted capacitor二进制加权电容General Input总输入General Register通用寄存器Analog to Digital Converter模数转换Multiplexer circuit多路转换电路Ultra Large Scale IC超大规模集成电路differential amplifier差动放大器unipolar transistor单极晶体管bipolar COMS双极型互补金属氧化物半导体Digital Clock Pulse数字时钟脉冲Reference Voltage参考电压Gain margin增益裕度quantization noise量化噪声SOJ J型引脚小外形封装TSOP薄小外形封装VSOP甚小外形封装TSSOP薄的缩小型SOP SOT小外形晶体管SOIC小外形集成电路impedance mismatch阻抗失配flexible printed circuit柔性印制电路Ion implantation离子注入molecule分子electric field电场target靶子；目标A wide variety of各种各样的dose剂量substrate基板；衬底crystal structure晶体结构Incidence发生phosphorus磷dope掺杂homogeneity同质性reproducibility可重复性profile剖面concentration浓度relatively比较而言nitride氮化物penetration刺穿；渗透penetration depth穿透深度gradient梯度sequence序列optimization最佳化dopant掺杂property性质restricted to限于domain领域shallow浅的theoretical理论上trajectory轨道distribute分配collision碰撞randomly随机的impact冲击力arsenic砷的crystalline silicon单晶硅dominant支配channel effect沟道效应tail尾巴tendency趋势saturate浸透，饱和conventional通常的tilt倾斜simulation仿真thermal vibration热振动interaction相互作用ion absorption离子吸收ion beam etching离子束蚀刻ion laser离子激光dose of medicine药剂量substrate interconnection衬底互连incidence zone入射区optimization cost优化成本dopant diffusion掺杂剂扩散domain name域名shallow binding浅结合distributed capacitance分布电容collision channel冲突通道randomly distributed data随机分布数据impact strength冲击强度impact response击打响应channeling diode沟道二极管conventional model传统模型thermal conduction热传导Simulation Analysis and Modeling模拟分布与模型化thermal agitation noise热噪声Thermal oxidation热氧化elevate提升angstroms埃inclination低下来ambient环境Room temperature室温oxidation furnace氧化炉diffusion furnace扩散炉cabinet机壳Fuse熔断quartz石英tube管undergo经受；承担heating coil加热线圈Glassware玻璃制品paddles短桨oxidizing agent氧化剂dry oxidation干法氧化Wet oxidation湿法氧化silicon硅silicon dioxide二氧化硅relative density相对密度Parabolic抛物线hamper妨碍empirically经验地halogen卤素flux变化Ambient condition环境条件ambient noise环境噪音ambient temperature环境温度Quartz crystal石英晶体quartz oscillator石英振荡器undergo change历经变化Quartz Crystal Frequencey Oscillator石英晶体频率振荡器undergo examination受到审讯Undergo experience经历undergo surgery接受手术undergo punishment遭受处罚Heating and ventilation供暖和通风heating effect热效应heating time加热时间Silicon chip硅片silicon dioxide layer二氧化硅层relative accuracy相对精度Relative divergence相对偏差relative magnitude相对值parabolic antenna抛物线天线Flux coating焊剂涂敷flux counter磁通计数器flux leakage漏磁Assemble装配packaging封装manufacture制造transform改变semiconductor半导体functional product功能产品end user终端用户electrical connection电连接Transmission传送thermal dissipation热损reliability可靠性innovation革新Architecture 建筑system integration系统集成expansion膨胀wireless无线的Bio-chips生物芯片optoelectronics光电子学scale等级gap间隙diversification多样化MEMS：Micro Electro Mechanical System微电子机械系统slack松弛mechanism混合SIP(system-in-package)系统芯片functional density功能密度printable可印刷的Embedded devices嵌入式器件emerging新兴的regulatory管理的assemble cell装配单元packaging technique组装技术transforming principle转化要素semiconductor junction半导体结transmission band传输频带expansion connector扩展接口System Application Architecture系统应用程序体系wireless terminal无线终端chip addressing芯片寻址gap junction间隙结合gap length间隙长度slack business松弛业务slack variable松弛变量mechanism design机械设计printable character可打印字符emerging technology新兴技术pin assignment引脚分配pin configuration引脚配置category construction类别构造identical equation恒等方程identical entry恒等项fan out扇出perspective view透视图perspective projection透视投影portable terminal 便携式终端stacked graph叠式图stacked interrupt栈式中断minimal automaton最小自动化precision coding精确编码precision instrument精密仪器alignment pattern对准模式alignment requirement校准请求absorption spectrum吸收谱absorption coefficient吸收系数refractive index折射率scattering layer散射层coupling capacitance耦合电容filter condition筛选条件filter factor过滤因子dielectric layer介电层impedance bridge阻抗电桥impedance mismatch阻抗失配integrated passive devices（IPD）集成无源器件exclusive专有地filter过滤器resistive电阻性的inductive电感性的capacitive电容性的capacitor电容器polymer聚合物dielectric电介质impedance阻抗RF-signal射频信号cellular网眼的thin film薄膜mountable可安装的bondable能捆绑的alumina氧化铝filter conditions筛选条件filter plate滤光板dielectric breakdown电介质击穿dielectric constant介电常数dielectric isolation电介质隔离法。
微电子专业英语翻译
当超量载流子被导入一个直接禁带半导体时，电子与空穴直接复合的几率 较高，这是因为导带的底部与价带的顶端位于同一线上，因此在禁带间跃 迁时，无需额外的动量。直接复合率R应正比于导带中含有的电子数目及 价带中含有的空穴数目。也就是 R=βnp 。其中β为比例常数。
As discussed previously, in thermal equilibrium the recombination rate must be balanced by the generation rate . Therefore , for an n-type semiconductor, we have Gth=Rth=βn no p no where nno and pno represent electron and hole densities in an n-type semiconductor at thermal equilibrium. When we shine a light on the semiconductor to produce electron-hole pairs at a rate GL(Fig.2.11(b)), the carrier concentrations are above their equilibrium values.
当超量载流子被导入一个直接禁带半导体时电子与空穴直接复合的几率较高这是因为导带的底部与价带的顶端位于同一线上因此在禁带间跃迁时无需额外的动量
2.5 Generation and Recombination Processes 载流子产生与复合过程
3. Characteristics of Diodes二极管特性 3.1 Introduction介绍
当电子从导带向下移到价带， 一个电子 - 空穴对消失。这 种反向过程称为复合，并以 复 合 率 Rth 表 示 ， 如 图 2.11 （ a ）所示。在热平衡状态 下，产生速率 Gth 必定等于 复合率 Rth ，所以载流子浓 度维持常数，且维持 pn=ni2 的状况。
微电子专业英语词汇
Abrupt junction 突变结[ə'brʌpt] 突然的；Accelerated testing 加速实验[ək'seləreitid] Acceptor 受主Acceptor atom 受主原子['ætəm] n. 原子Accumulation [ə,kju:mju'leiʃən]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dʒən]地区积累区Accumulation layer['leiə] 层积累层Active region 有源区['æktiv]积极的,有源的Active component [kəm'pəunənt]元件有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance [əd'mitəns]导纳Allowed band [bænd]带允带Alloy-junction device ['ælɒɪ]合金结器件Aluminum(Aluminium) [ə'lju:minəm]铝Aluminum – oxide ['ɔksaid]铝氧化物Aluminum passivation [pæsi'veiʃən]钝化铝钝化Ambipolar [,æmbi'pəulə]双极的Ambient temperature ['æmbiənt]环境温度Amorphous [ə'mɔ:fəs]无定形的，非晶体的Amplifier ['æmplifaiə]功放扩音器放大器Analogue(Analog) ['ænəlɔɡ] comparator ['kəmpəreitə]模拟比较器Angstrom['æŋstrəm]埃Anneal [ə'ni:l]退火Anisotropic [æn,aisəu'trɔpik]各向异性的Anode ['ænəud]阳极Arsenic ['ɑ:sənik (AS) 砷Auger ['ɔ:ɡə]俄歇Auger process 俄歇过程Avalanche ['ævəlɑ:ntʃ]雪崩Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'teiʃən](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子Background doping 本底掺杂Backward ['bækwəd]反向Backward bias ['baiəs](偏置,)偏爱反向偏置Ballasting ['bæləst] resistor 整流电阻Ball bond [bɔnd](结合)球形键合Band 能带Band gap [ɡæp](间隙)能带间隙Barrier 势垒Barrier layer 势垒层Barrier ['bæriə] width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit(运输)time基区渡越时间Base transport efficiency [i'fiʃənsi](效率)基区输运系数Base-width modulation [,mɔdju'leiʃən(调制)基区宽度调制Basis vector ['vektə]矢量基矢Bias 偏置Bilateral [,bai'lætərəl] switch 双向开关Binary ['bainəri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pəulə]双极性的Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [blɔk]布洛赫Blocking ['blɔkiŋ]（截止，阻塞）band 阻挡能带Blocking contact 阻挡接触Body（身体，主题）- centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strʌktʃə]结构体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit ['sə:kit]电路自举电路Bootstrapped emitter [i'mitə]发射器follower（追随者）自举射极跟随器Boron ['bɔ:rɔn]硼Borosilicate [,bɔ:rəu'silikit]硼硅酸盐glass 硼硅玻璃Boundary condition条件，状况边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk [bʌlk]体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination [,ri:kɔmbi'neiʃən]体复合Burn - in 老化Burn out 烧毁Buried ['berid]埋葬的channel通道；频道；海峡埋沟Buried diffusion扩散region 隐埋扩散区Can 外壳Capacitance[kə'pæsɪt(ə)ns]电容Capture俘获cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade [kæs'keid]级联，串联级联Case 管壳Cathode['kæθəud]阴极Center 中心Ceramic [si'ræmik]陶瓷（的）Channel['tʃænəl] (频道)沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance[im'pi:dəns]特征阻抗Charge (控告)电荷,充电Charge-compensation[,kɔmpen'seiʃən](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[njuː'trælɪtɪ](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[njuː'trælɪtɪ]化学腐蚀法Chemically-Polish['pɒlɪʃ]（磨光）化学抛光Chemmically-Mechanically [mɪ'kænɪkəlɪ]（机械地）Polish (CMP) 化学机械抛光Chip 芯片Chip yield（产量）芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage['kliːvɪdʒ] plane（平面）解理面Clock rate（比率）时钟频率Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器Close-packed structure（构造）密堆积结构Close-loop（环）gain（获利，增加）闭环增益Collector 集电极Collision[kə'lɪʒ(ə)n]（冲突）碰撞Compensated（补偿）OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[kəm,pætɪ'bɪlɪtɪ]兼容性Compensation 补偿Compensated impurities（杂质）补偿杂质Compensated semiconductor 补偿半导体Complementary（补足的）Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Compound['kɒmpaʊnd] Semiconductor 化合物半导体Conductance[kən'dʌkt(ə)ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration（配置）组态Conlomb['kuːlɒm]库仑Conpled Configuration Devices 结构组态Constants（常量，常数）物理常数Constant energy surface 等能面Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触Contamination[kən,tæmɪ'neɪʃən]玷污Continuity[,kɒntɪ'njuːɪtɪ]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势Continuity condition 连续性条件Contra['kɒntrə]相反doping 反掺杂Controlled 受控的Converter[kən'vɜːtə]（converter转变，转换）转换器Conveyer[kən'veɚ]传输器Copper（铜）interconnection[,ɪntɚkə'nɛkʃən]（互联）system 铜互连系统Couping 耦合Covalent[kəʊ'veɪl(ə)nt]（共价的）共阶的Crossover 跨交Critical （批评的）临界的Crossunder 穿交Crucible['kruːsɪb(ə)l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度Curvature'kɜːvətʃə曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体J）Dangling ['dæŋg(ə)lɪŋ;bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel ['desɪbel] (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor['dəʊnə（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation[,degrə'deɪʃ(ə)n]退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation（隔离。
微电子专业英语词汇
微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的；Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触，联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的，非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki]（截止，阻塞） band 阻挡能带Blocking contact 阻挡接触 Body（身体，主题） - centered（居中的）体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower（追随者）自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联，串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷（的） Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl]（磨光）化学抛光Chemmically-Mechanically [m'knkl]（机械地）Polish (CMP) 化学机械抛光 Chip 芯片Chip yield（产量）芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane（平面）解理面Clock rate（比率）时钟频率 Clock generator 时钟发生器Clock flip-flop（触发器）时钟触发器 Close-packed structure（构造）密堆积结构Close-loop（环） gain（获利，增加）闭环增益 Collector 集电极Collision[k'l()n]（冲突）碰撞 Compensated（补偿） OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection（抑制，拒绝）ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities（杂质）补偿杂质 Compensated semiconductor 补偿半导体Complementary（补足的） Darlington circuit（电路，回路）互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（晶体管）(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function（功能，函数）余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction（传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration（配置）组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants（常量，常数）物理常数Constant energy surface 等能面 Constant-source diffusion（扩散，传播）恒定源扩散Contact（联系，接触）接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut]（连续性）equation（方程式，等式）连续性方程Contact hole孔接触孔Contact potential（潜能，潜在的）接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt]（converter转变，转换）转换器 Conveyer[kn've]传输器Copper（铜） interconnection[,ntk'nkn]（互联） system 铜互连系统 Couping 耦合Covalent[k'vel()nt]（共价的）共阶的 Crossover 跨交Critical （批评的）临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density（密度）电流密度 Curvature'kvt曲率Cut off 截止Current drift（漂移）/dirve/sharing电流漂移/驱动/共享Current Sense（感觉，检测）电流取样 Curvature 弯曲Custom（风俗，习惯，定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal（晶体，单晶）Czochralski technique 切克劳斯基技术（Cz 法直拉晶体 J）Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn（捐赠者level 深施主能级Deep impurity（杂质，不存，不洁）level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影，薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数 dice） Diode 二极管Dielectric 介电的 Dielectric isolation（隔离。
微电子学专业英语 (2)
英语百科| 中国最大的英语学习资料在线图书馆! >> 行业英语>> 生活英语微电子英语词汇发表评论(0)编辑词条D cable D型电缆d character D字符，废除字符D cube D立方D region D层daily transaction reporting 每日处理报告DTRdaisy chain 菊链daisy fault 延迟故障daisy wheel 菊轮daisy wheel printer 菊花形字盘打印机daisy-chain bus 菊链环总线daisy-chain device priority 菊链环装置优先次序daisy-chain interrupt 菊花链环中断Dallas Semiconductor Dallas 半导体companyDallas Semiconductor Dallas 半导体companyDALSA Incorporated DALSA 公司companydamage assessment routine 故障查定程序DARDamon effect 达门效应damped natural frequency 阻尼的固有频率damped oscillation 阻尼振荡damped waves 阻尼波，减幅波dampen 阻尼，使衰减damper tube 阻尼管damper winding 阻尼绕组，减振线圈damping 阻尼，衰减damping coefficient 阻尼系数，减幅系数damping constant 阻尼常数，减幅常数damping diode 阻尼二极管damping factor 阻尼因数，减幅因数damping ratio 阻尼比dangling bonds 悬挂键dark conduction 暗电导dark resistance 暗电阻dark space 暗区dark spot signal 暗点信号dark-noise signal 暗噪声信号dark-trace tube 暗迹管Darlington amplifier 达林顿放大器Darlington circuit 达林顿电路Darlington connection 复合连接，达林顿连接Darlington feed 达林顿供电Darlington power transistors 达林顿功率晶体管dash 长划dashpot 减振器，缓冲器data 数据data 数据data abstraction language 数据抽象语言data accepted 已收数据DACdata access 数据存取data access arrangement 数据存取管理DAAdata access arrangement 数据存取装置data access line 数据存取线DALdata access protocol 数据存取协仪DAPdata access register 数据存取寄存器DARdata access register 数据存取寄存器data acquisition 数据采集DAdata acquisition 数据采集data acquisition and control 数据采集与控制DACdata acquisition and control system 数据采集和控制系统DACS data acquisition and control system 数据采集和控制系统data acquisition equipment 数据采集设备DAEdata acquisition equipment 数据采集设备data acquisition system 数据采集系统DASdata acquisition system 数据采集系统data acquisition unit 数据采集单元DAUdata acquisition&recording system 数据采集和记录系统DARS data adapter unit 数据转接器data addressed memory 树据定址存储器DAMdata administrator 数据管理员data aggregate 数据聚合data analysis and processing 数据分析和处理DAPdata analysis and reduction system 数据分析和简化系统DARES data analysis facility 数据分析设备DAFdata analysis recording tape 数据分析记录带DARTdata area 数据区data array 数据组，数据阵列data association message 数据相关信息DAMdata automatic reduction equipment 数据自动简化装置DARE data automation subsystem 数据自动化子系统DASdata available 可用数据DAdata banding 数据处理data bank 数据库集data base 数据库DBdata base 数据库data base administrator 数据库管理员data base components 数据库组件data base data model 数据库数据模型data base definition 数据库定义DBDdata base descriptive language 数据库描述语言DBDLdata base file 数据库文件DBFdata base handling system 数据库处理系统DBHSdata base input language 数据库输入语言DBILdata base key 数据库关键码data base language 数据库语言data base layering 数据库层次化data base load 数据库负载DBLdata base management 数据库管理DBMdata base management 数据库管理data base management system 数据库管理系统DBMSdata base management system 数据库管理系统data base manager 数据库管理程序DBMdata base memory 数据库存储器DBMdata base size 数据库大小data base sort option 数据库的分类选择data base task group 数据库任务组DBTGdata base workload 数据库工作负荷data base/data communication 数据库与数据通信DB/DC data bit period 数据位周期DBPdata block 数据块data break 数据间歇data buffer 数据缓冲器data buffer local storage 数据缓冲局部存储器DBLS data buffer register 数据缓冲寄存器data buffer unit 数据缓冲器DBUdata bus 数据总线DBdata bus 数据总线DBdata bus 数据总线data bus component 数据总线部分data bus enable 数据总线接通data bus monitor 数据总线监视器DBMdata byte buffer 数据字节缓冲器DBBdata capture 数据捕获data carrier 数据载体data cartridge 数据盒式磁带data cell 数据单元DCdata cell 数据单元data chain 数据链data chaining 数据链接data channel 数据通道DCdata channel 数据通道data channel filter 数据通道滤波器DCFdata channel multiplexer 数据通道多路转换器data chip 数据晶片data circuit 数据电路data circuit switching system 数据电路交换系统data circuit terminating equipment 数据电路端接设备data circuit transparency 数据线路透明性data clause 数据子句data clock 数据时钟DCLKdata code 数据代码data collection 数据收集DCdata collection 数据收集data collection and analysis 数据收集和分析data collection and analysis system 数据收集与分析系统DCAS data collection station 数据收集站data collection system 数据收集系统data communication 数据通信DCdata communication 数据通信data communication buffer 数据通信缓冲器data communication channel 数据通信信道DCCdata communication control unit 数据载波检测DCCUdata communication control unit 数据通信控制设备DTCUdata communication control unit 数据通信控制单元data communication equipment 数据通信设备DCEdata communication equipment 数据通信设备data communication exchange 数据通信交换机data communication interrogate 数据通信询问DCIdata communication monitor 数据通信监督程序data communication network 数据通信网（络）data communication processor 数据通信处理机data communication station 数据通信站data communication system 数据通信系统DCSdata communication system 数据通信系统data communication terminal 数据通信终端DCTdata communication terminal 数据通信终端data communication write 数据通信写入DCWdata compaction 数据精简data complementation 数据互补data compression 数据压缩data concentration 数据集中data concentrator 数据集中分配器data connection 数据连接data connector 数据连接器data control 数据控制器DCdata control block 数据控制块DCBdata control block 数据控制块data control system 数据控制系统DCSdata conversion line 数据转换线data conversion receiver 数据转换接收器DCRdata conversion utility 数据转换实用程序data converter 数据转换器data counter 数据计数器DCdata definition 数据定义DDdata definition 数据定义data definition language 数据定义语言DDLdata definition name 数据定义名字data definition statement 数据定义语句data delay 数据延迟Data Delay Devices, Inc. 数据Delay 设备公司company data demand 数据请求DDdata description 数据描述data description entry 数据描述项目data description language 数据描述语言data descriptive language 数据描述语言DDLdata descriptor 数据描述符data design 数据设计Data Device Corporation 数据设备公司companydata dictionary 数据字典data dictionary assembler 数据字典汇编程序DADAdata dictionary directory 数据字典目录data dictionary/directory 数据字典目录DD/DSdata dictionary/directory system 数据字典/目录系统DDE data digital 数位显示data display 数字显示data display alarm 数据显示报警DDAdata display board 数据显示DDBdata display indicator 数据定义指示器DDL data display module 数字显示模块data display unit 数字显示器data distribution list 数据分配表DDLdata distribution path 数据分配通路DDPdata distributor 数字分配器data division 数据部分data edition 数据编辑data element 数据元data element dictionary 数据元字典data element set 数据元素集DESdata element set 数据元素集DESdata encoder 数据译码器DEdata entry 数据进入项DEdata entry 数据输入data entry device 数据输入设备data entry system 数据输入系统data entry terminal 数据输入终端data entry terminal system 数据输入终端系统data error 数据误差data evaluation 数据评价data event control block 数据事件控制块DECB data examination clerk 数据检验员Data Exchange 数据交换控制DXCdata exchange control 数据交换控制DXCData Exchange Interface 数据交换接口DXI data exchange system 数据交换系统data exchange unit 数据交换设备DEUdata exchange unit 数据交换设备DEUdata exchange unit 数据交换设备data extend block 数据扩充块data extent block 数据扩展块DEBData eXtract facility 数据析取设备,数据抽取设备DXTData Facility Storage Management Subsystem 数据设备储存管理子系统DFSMS data field 数据区，数据组Data Field 数据栏DFdata file 数据文件data file interrogate 数据文件询问DFIData File Utility 数据文件共用程序DFUdata flow computer 数据流计算机data flow control 数据流量控制DFCData Flow Control 数据流控制DFCdata flow diagram 数据流程图DFDData Flow Editor 数据流编辑程序，数据流编辑器DFEdata flow language 数据流式语言data flowchart 数据流程图data format 数据格式data formatting statement 数据格式语句DESdata formatting statement 数据格式语句data frame 数据帧data generator 数据发生器data ground station 数据地面站DGSdata handing 数据处理data handling equipment 数据处理设备DHEdata handling system 数据处理系统DHSdata handling unit 数据处理设备DHUdata head 数据磁头data hierarchy 数据层次data identifier 数据标识符Data In 数据输入DIData In The Middle 中间数据DIMdata in voice 声音数据data independence 数据独立性data independent access model 数据独立存取模型data initialization statement 数据初值语句data input 数据输入DIdata input 数据输入data input /out interface 数字输入/输出接口DIOIdata input bus 数据输入总线DIBdata input clerk 数据输入员DICdata input console 数据输入控制台DICdata input subsystem 数据输入子系统DISSdata input/data output 数据输入/输出DI/DOdata input/output 数据输入/输出DIOdata input/output register 数据输入/输入寄存器Data Input-Output 数据输入/输出DIOdata inquiry terminal 数据询问终端DITdata interchange code 数据交换码Data Interchange Format 数据交换格式DIFData Interchange Standards Association 数据交换标准协会DISA data interface 数据接口data interface format 数据接口格式DIFData Interface Format 数据接口格式DIFdata interface unit 数据接口DIUdata interface waveform 数据接口波形data interlock 数据互锁data item 数据项DIdata item 数据项data item validation 数据项确认data language 数据语言DLdata layout 数据布局data level 数据级data line 数据传输线DLdata link 数据通信线路DLdata link 数据链路Data Link Connection Indentifer 数据链路连接识别码DLCIdata link control 数据链路控制DLCdata link control 数据链结控制data link control field 数据链路控制字段DLCF Data Link Escape 数据链路扩展DLEdata link layer 数据链路层data link protocol 数据链路协议Data Link Support 数据链路支持系统DLSdata link terminal 数据链路终端DLTdata link test message 数据链路测试信息DLTM data list file 数据表文件DLFdata location 数据单元，存储单元data logger 数据记录器data logging 数据登录data logging equipment 数据登录设备data logging system 数据记录系统DLSdata logging system 数据登录系统data management 数据处理DMdata management 数据管理data management channel 数据管理通道DMC data management program 数据管理程序Data Management Software 数据管理软件DMS data management system 数据管理系统DMS data management system 数据管理系统Data Management System 数据管理系统DMS data manager 数据主管人DMdata manipulation 数据处理data manipulation language 数据操作语言DML data manipulation language 数据操纵语言Data Manipulation Language 数据操控语言1 DL/1 Data Manipulation Language 数据操控语言DML data mapping 数据映象data mass 巨量数据data materialization 数据具体化data medium 数据媒体data message 数据报文data migration 数据迁移data model 数据模型data modem 数据调制解调器data module 数据模件data multiplex sub-system 数据多路传输子系统DMSSdata multiplexer 数据多路复用器data multiplexer channel 数据多路转换器通道DMCdata name 数据名称data name card 数据名卡片DNCdata network 数据网络Data N etwork Identification Code 数据网络识别码DNICdata not avaible 无效数据DNAData On Master Group 主群组数据DOMdata optimization language 数据优化语言DOLdata optimizing computer 数据优化计算机DOCdata organization 数据组织data origination 数据初始加工Data Out 数据输出DOdata output 输出数据Data Over Voice 话上数据DOVdata packet 数据组Data Packet N etwork-Packet Handler 数据分组网络-分组信息处理器DPN-PH Data Parity Enable 数据奇偶生效DPARENData Parity Error 数据奇偶校验错误DPEdata path 数据通路data path controller 数据通路控制器DPCData Path Controller 数据通路控制器DPCData Path Extender 数据路径扩展器DPEdata path switch 数据通路开关DPSData Phase Optimization 数据阶段优化DPOdata phone 数据传送器data plotter 数据绘图器data pointer 数据指示器data preparation 数据准备data printer 数据印刷机DPdata processing 数据处理data processing algorithm 数据处理算法DPAdata processing center 数据处理中心data processing cycle 数据处理流程data processing equipment 数据处理装置DPEdata processing graphic 数据处理图形data processing group 数据处理组DPGdata processing machine 数据处理机DPMdata processing machine 数据处理机Data Processing Management Association 数据处理管理会DPMA data processing non-numerical 非数字的数据处理data processing subsystem 数据处理子系统DPSSdata processing switching system 数据处理转换系统DPSSdata processing system 数据处理系统DPSdata processor 数据处理机data protection 数据保护data quality control 数据质量控制DQCdata quality monitor 数据质量监督程序，数据质量监视器DQM data radio 数据纯化data rate 数据无线电data rate to bandwidth ratio 数据率data reader 值道频带利用率Data Reading Device 数据纪录设备,读数据设备DRDdata readout head 数据检索语言DRLData Ready 数据就绪DRData Received 接收数据DRdata record 数据阅读器data recorder 数据记录器DRdata recording control 数据记录控制器data recording device 数据记录装置DRDdata recording device 数据记录装置data recording system 数据记录系统DRSdata recovery 数据恢复data recovery vehicle 数据恢复装置DRVdata reduction 数据整理，数据简化data reduction 数据简化data reduction and analysis tape 数据整理分析带DRAT data reduction compiler 数据整理编译程序DRCdata reduction system 数据整理系统DRSdata reduction translator 数据简化翻译程序DARTdata register 数据寄存器data regulation 数据法规data reliability 数据可靠性Data Request Output 数据要求输出DROdata retrieval 数据检索data rule 数据规则data security 数据安全性Data Segment 数据段DSdata selection and modification 数据选择与修改data selector 数据选择器Data Send 数据传送DSAbrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum（Aluminium）铝Aluminum - oxide 铝氧化物Aluminum passivation铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic （AS）砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish （CMP）化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio （CMRR）共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor（CMOS）互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design （CAD）/test（CAT）/manufacture（CAM）计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底）Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel （dB）分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade）/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS（DMOS）双扩散MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation（ship）爱因斯坦关系Electric Erase Programmable Read Only Memory（E2PROM）一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E-K）图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEntefic （低）共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM （EPROM）可搽取（编程）存储器Error function complement （erfc）余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide（GaAs）砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium（Ge）锗Graded 缓变的Graded （gradual）channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.（H-MOS）高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂质散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide （ITO）铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage输入失调电压Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET（JFET）结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED）发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure （MTBF）平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FET Metallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor（MOST ）MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module（MCM）多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺（photo）resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential （电）势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board（PCB）印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator（PWM）脉冲宽度调制punchthrough 穿通Push-pull stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi - Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源R ead diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4）氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat（PT）热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合。
微电子专业英语词汇
Chapter One 第一章Semiconductor fundamental 半导体基础1.1 Semiconductor Materials 半导体材料1 Solid stare 固态2 insulator 绝缘体3 electrical conductivity电导率4 conductor 导体5 semicoductor 半导体6 Fused quartz熔融石英7 order 有序8 impurity 杂质9 element semiconductor元素半导体10 illumination 阐明11 silicon 硅12 Periodic table周期表13 germanium 锗14 gallium 嫁15two-terminal 两端16 Arsenic 砷17 silica 石英18bipolar transistor 双极晶体管19 rectifier 整流器20 optical 光21photodiodes 光电二极管22silicates 硅酸盐23dimension 维度24 Gallium arsenide 砷化镓25 microwave 微波26compound semicondutor 化合物半导体1.2 Crystal Structure 晶体结构1 Crystal 晶体2 amorphous 非晶的3 formlessness 无定形的4 solar cell 太阳能电池5 polycrystalline 多晶的6 silicon dioxide 二氧化硅7 gate 门栅8 lattice 晶格9 single crystal 单晶10 Fashion 方式11 vibration 振动12 unit cell 原胞13 cubic-crystal 立方晶体14 fcc 面心立方15 lattice constant 晶格常数16 Polonium 钋17 bcc 体心立方18 Miller indices 密勒指数19 sodium 钠20 tungsten 钨21 gallium phosphide 磷化镓22 Aluminum 铝23 copper 铜24 diamondlattice 金刚石点阵25 platinum 铂26 Sublattice 子格27 interpenetrate 互相贯通28 diagonal 对角式29 terahedron 四面体30 zincblende lattice 闪锌矿晶格31 zincsulfide 硫化锌32 anisotropic 各向异性33 crystal orientation 晶向34 interceot 截距35 reciprocal 倒数36 perpendicular垂直37 integer 完整38 Cartesian coordinate 笛卡尔坐标系1.3 Bohrˊs Atom Model 波尔原子模型1 nucleus 原子核2 discrete 分立3 engery level 能级4 electronvolt 电子伏5 wavelength 波长6 binding engery 结合能7 shell 壳8 force 力9 angular momentum 角动量10 photon 光子11 joule 焦耳12 excited state 激发态13 potential 电势14 MKS system米千克秒制15 kinetic energy 动能16 ground state 基态17 valence electron 价电子18 principal quantum number 主量子数1.4 V alence Bonds Model of Solid 固体材料价键模型1 current 电流2 resistivity 电阻率3 electric field 电场4 covalent bond 共价键5 nuclei 核6 metallic conductor 金属导体7 electrostatic 静电的8 deficiency 缺陷9 ionic bond 离子键10 hole 空穴11 vacancy 空位1.5 Energy Bonds Model of Solid 固体材料的能带模型1 gaseous 气态2 mass 质量3 plank constant 普朗克常量4 permittivity 介电常数5 bandgap频带间隙6 energy band 能带7 valence band 价带8 conduction band 导带9 band diagram 能带图10 at rest 静态11 discrete energy level 不连续能级离散能级12 quantum mechanics 量子力学13 doubly degenerate energy lever1.6 Free-Carrier Density in Semicondutor 半导体中的自由载流子的密度1 standing-wave 驻波2 wavelength 波长3 momentum 动量4 sphere 球面5 volume 体积6 electron spin 电子自旋7 agitation 振荡8 intrinsic 本征的9 allowed state 允态10 product 乘积11 integrate 集成12 Fermi level 费米能级13 function 函数14 concentration 浓度15 forbidden-gap 禁带16 unity 单元17 exponential 指数函数18 infinity 无穷大19 excitation 激发20 recombination 复合21 deviation 误差22 extrinsic 非本征的23 term 项24 mass-action law 质量守恒定律1.7Donors and Acceptors1 donor 施主2 accepter 受主3 dope 掺杂4 negative 负的5 positive 正的6 boron 硼7 ionization 电离第二章mobility [məu'biliti]迁移率drift [drift] 漂移diffusion [di'fju:ʒən] 扩散gradient ['greidiənt] 梯度generation [,dʒenə'reiʃən]Injection [in'dʒekʃən] 注入None-equilibrium 非平衡Excess carrier 过剩载流子Recombination 符合Lifetime 寿命Thermal equilibrium 热平衡particle ['pɑ:tikl] 粒子质点motion 运动Equipartition 均分Degree of freedom 自由度Three-dimensional ['θri:di'menʃənəl] 三维的kinetic energy 动能collision [kə'liʒən] 碰撞deflect [di'flekt] 偏转挠曲phonon ['fəunɔn] 声子mechanism ['mekənizəm] 机制，机理，操作机构coulomb force 库仑力displacement 位移，迁移mean free path 平均自由行程component [kəm'pəunənt] 子件，组件vacuum ['vækjuəm] 真空，负压proportionality [prəu,pɔ:ʃə'næliti] 比例性factor因素、因数subscript ['sʌbskript] 下标valley 谷最小值cross-sectional area 截面积conductivity [,kɔndʌk'tiviti] 电导率linearity [lini'ærəti] 线性度convection [kən'vekʃən] 对流stationary ['steiʃənəri] 固定的molecule ['mɔlikju:l] 分子spatial ['speiʃəl] 空间的half-width 半角Fick's first law：菲克（扩散）第一定理；菲克第一定律carrier injection 载子注入forward bias 正向偏压；前向偏移optical excitation 光激励electron hole pair 电子空穴对majority carrier 多数载流子injection level 注入水平order of magnitude 数量级low level injection 低水平注入low level injection 高水平注入dissipate 使消散,驱散；驱散；浪费；耗散radiative ['reidieitiv] 辐射的band to band带间direct-bandgap 直接带隙transient trænʃənt] 瞬态response 响应decay 衰减photoconductivity fəutəu,kɔndʌk'tiviti] 光电导性setup 装置pulse 脉冲propagation 传播传导generation 产生世代carrier scattering 载流子散射Chapter Three3.1Device 器件diode 二极管wafer 晶片Alloying 合金epitaxy 外延implantation 注入Substrate 沉底vacuum chamber 真空室furnace 熔炉Eutectic 共晶体dopant 掺杂剂VPE气象外延LPE 液相外延MBE 分子束外延slice 切片Solubility 溶解度range 范围incident ion 入射离子Anneal 退火oven 恒温炉metallurgical 冶金Clectrostatic 静电的dashed line 虚线homojunction 同质结Huterojunction 异质结3.2Electron affinity 电子亲和势work function 功函数reference 基准点Built-in 内建depletion region 耗尽区polarity 极性Quasi-neutral 准中性reverse bias 反偏tunneling current 漏电流3.3Numenclature 命名，命名法sterdy-state 稳态counterintuitive 违反直觉地Avalanche 雪崩interband 带间extrapolate 外推Quality factot 品质因子zener tunneling 齐纳隧道multiplication factor 倍增因子Impedance 阻抗differential 差分dimension 量纲维数Trap 陷阱rectangle 长方的，矩形Chapter FourBJT---双极结式晶体管Collector---集电极Saturation mode---饱和状态Cut off mode---截止状态Minority carrier---少数载流子Qualitatively---质量上Diode---二极管Injection efficiency---注入系数Tunneling---隧道（穿）Ionized acceptor---离子化受主Approximation---近似Barrier---势垒Simulation---仿真Lateral---横向Sheet resistance---表面电阻MOS---金属氧化半导体Gate---栅极Buried layer---势垒层Forward biased---正向偏压Nondegenerate---非简并Injection---注入Milliampere---毫安培Lifetime---寿命Terminal---终端Capacitance---电容Width---宽度Substitute---代替Uniform doping---均匀掺杂Horizontal axis---水平轴Intrinsic---本征的Slope---斜面，坡度，跨导Terminal---电极Transistor---晶体管Active mode---有源状态Reverse biased---反向偏压Assumption---假想，假设Recombination---复合Leakage current---漏电电流Diffusion length---扩散长度Quantitatively---数量上Breakdown---击穿Flux---通量Simplify---简化Doping profile---掺杂分布Normalization---正规化，标准化Extrinsic---非本征的Avalanche---电子雪崩Emitter---发射极Junction---结Common base configuration---共基极组态Common emitter configuration-共射极组态Degenerate---简并的Extract---提取Base contact---基极接点Micrometer---千分尺Principle---原理Steady-state---平衡状态Concentration---集中，浓度Denominator---分母Semilog---半对数的Extrapolation---外推法Lumped resistance---集中电阻Interdigitated structure---交互式结构Base---基极Well---井Boundary condition---边界条件Generation---产生，代Order of magnitude---数量级Current gain---电流增益Collection efficiency---收集效率Neutrality---中性Hyperbolic function---双曲函数Multiplication---乘Gradient---坡度，斜率Depletion layer---耗尽层Polarity---极性，偏极Chapt 5frequency 频率analog模拟digital数字transient瞬态的/过渡的uppercase大写字母lowercase小写字母load resistance负载电容supply voltage供给电压load line 负载电路equivalent circuit 等效电路differential 微分measure 测量reciprocal 交互的/倒数Transconductance跨导series resistance串联电阻Infinite无穷的shaded area 阴影区operating speed工作速度Response反应figure of merit品质因数Delay延时Parasitic寄生的Oscillation振动self-aligned自动对准ion implantation离子注入heat treatment热处理Polysilicon多晶硅Discontinuity中断Switch开关Pulse脉冲Waveform 波形charging time充电时间Parallel并联State状态Chapt 6dielectric constant电介质常数channel 沟道Macroscopic宏观的work function自由能Equilibrium平衡Substrate衬底Interface接触面Permittivity介电常数Thickness 厚度Electrode电极Accumulation积聚Dc直流电Ac交流电space charge空间电荷inversion layer反型层Source源Length长度Conductance 电导率Drain漏Subthreshold次于最低限度的Perpendiculat垂直的Threshold阈值Bulk体积surfacepotential表面势flat-band voltage平能带电压Symbol符号Longitudinal 纵向的Transverse横向的Expression表达式NFET n沟道场效应晶体管Derivation推论/起源Mobility迁移率Constant 常数Bias偏压enhancement-type增强型parallel plate并联板ground 地V ariable变量Modulation调制Scattering散射Collision碰撞kinetic energy动能mean free path 平均自由能mean free time 平均自由时间Parameter参数Integral积分Minimum最小的Maximum 最大的Evaluate赋值dangling bond悬空键electrostatic potential静电势。
专业英语 微电子技术分册 第6节1.1.2 crystal structure晶体结构化学键(赣南师范大学)
identical [aɪˈdentɪkl] adj.同一的; 相同的
Equidistant [ˌi:kwɪˈdɪstənt] adj.距离相等的，等距的
Tetrahedron [ˌtetrəˈhi:drən] n.四面体
图1－2（b）是体心立方晶体，除了8个角原子外，一个原 子在其立方中心上。在体心立方晶格中，每个原子具有8 个相近原子。 body-centered cubic（体心立方） (bcc)
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
Crystal Structure
多数具有Ⅲ-Ⅴ族原子 化合物半导体具有闪锌矿结构，它有金刚石相 同结构除了一个fcc子晶格结构有一个Ⅲ 族原子Ga和 Ⅴ族原子 As。
zincblende [zɪnkb'lend] 闪锌矿 Identical [aɪˈdentɪkl] adj.同一的;完全同样的
崇德尚学 求实创新
Chapter 1 Semiconductors Physics
have a diamond lattice structure（金刚石晶体结构）.
This structure also belongs to the cubic-crystal family
and can be seen as two interpenetrating（渗透） fcc
sublattices(亚点阵） with one sublattice displaced（移
A large number of elements exhibit the fcc lattice form,
微电子专业英语翻译
费米分布函数
Fig.1.6 shows schematically（图表式的） from left to right the band diagram ,the density of states (which varies as E )，the Fermi distribution function, and the carrier concentration （浓度）for an intrinsic semiconductor .The carrier concentration can be obtained graphically from Figure 1.6 using Eq.(1.12); that is ,the product of N(E) in Fig.1.6(b) and F(E) in Fig.1.6(c) gives the n(E)-versus-E curve (upper curve ) in Fig.1.6(d).The upper shaded area in Fig.1.6(d) corresponds to the electron density.Fra bibliotek状态密度
The incremental momentum（增加的动量） dp required for a unity increase in nx is For a three-dimensional cube of side L,we have
The volume dpxdpydpz in the momentum space for a unit cube (L=1) is thus equal to h3.Each incremental change in n corresponds to a unique set of integers (nx,ny,nz) ,which in turn corresponds to an allowed energy state. Thus,the volume in momentum space for an energy state is h3 .The volume between two concentric (同中心的 同中心的)spheres (from p to p+dp is 同中心的 4πp2dp) .The number of energy states contained in this volume is then 2(4πp2dp)/ h3,where the factor 2 accounts for the electron spins .we can substitute E for p and obtain
微电子专业英语词汇
微电子专业英语词汇Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centered cubic structure 体立心结构Boltzmann 波尔兹漫Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举发射跟随器Boron 硼Borosilicate glass 硼硅酸玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Can 外壳Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试/制造Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Coulomb 库仑Coupled Configuration Devices 结构组态Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Coupling 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible坩埚Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术Cz法直拉晶体J）Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布罗意Decelerate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数dice）Diode 二极管Dielectric 电介质，绝缘体Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electro migrate 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共熔的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epitaxy 外延Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Normalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrion 热载流子Hybrid integration 混合集成Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto- resistance磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor (MOST) MOS. 晶体管Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Numerical analysis 数值分析Occupied band 满带Efficiency 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子Optical quenching光猝灭Optical transition 光跃迁Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Piezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon 多晶硅Potential (电)势Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudo potential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punch through 穿通Push-pull stage 推挽级Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency量子效应Quantum mechanics 量子力学Quasi? Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radioactive - recombination辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetim驰豫时间Reliability 可靠性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定谔Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sensitivity 灵敏度Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Silver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Son band 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional替位式的Super lattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Tailing 扩展Terminal 终端Tensor 张量Tonsorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectric power 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Threshold 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerance 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间Ultraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapor phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法中国在2007 年成为了世界第一光伏电池生产国，但中国光伏产业的现状是：只做躯体，头和脚两端在外，即生产的太阳能电池绝大部分硅原料都是从外国进口的，而生产出来之后，绝大部分都出口到外国。
微电子专业英语课件
Cecil A. Lasch, Jr., a technician who worked at Fairchild, did most of the work on the diffusion furnace hardware.
译文：Cecil A. Lasch, Jr，仙童公司 的技术员，在扩散炉硬件上作出了大 量工作。
Chapter I History Unit 1
The First Transistor in Fairchild The first seven bench diffusion furnaces
used in the corner of Fairchild’s Palo Alto facility were very similar to furnaces used by Shockley Semiconductor.
wafers n. 晶圆
译文：手动把晶圆送入和退出石英管。晶 圆冷却通常在扩散管的阴凉区内进行，使 晶圆冷却到适合处理的温度。
The programmed heating and cooling was not used because of the difficulty in maintaining good temperature profiles.
vent n. 通风口, 开衩, 通风孔, 出口, 排放 exhaust n. 排气，排气装置
Supplementary Words：
exhaust valve 排气阀 exhaust algorithm 穷举算法
译文：通过扩散管排气孔上方的通风孔把 使用的气体通入到特定空间中。
There was no “clean room etiquette”, and the chain smoker Robert Noyce frequently smoked in the Fairchild manufacturing facility.
微电子专业专业英语翻译
Practical Applications of Semiconductor Reliability ModelingLori E. Bechtold, Boeing Commercial AirplanesFlorian Molière, PhD, Airbus Group InnovationsDavid A. Sunderland, PhD, Boeing Space & Intelligence SystemsBahig Tawfellos, Honeywell AerospaceKey Words: Physics-of-Failure, Predictions, Semiconductor ReliabilitySUMMARY & CO CLUSIO SA practical methodology for modeling the reliability of deep submicron (<90 nm) semiconductor microcircuits provides timely and needed information for the integration of commercial off the shelf (COTS) electronics in airborne and high reliability applications.（1）Designing and assuring customer confidence in airborne high reliability applications becomes more challenging as electronics technologies develop rapidly and commercial application demands drive the increasing use of faster, more integrated, higher density commercial off the shelf (COTS) electronics. （2）Use of COTS electronics provides advantages of greater computational power, with higher manufacturing volumes driving better quality control. COTS also introduce the new problem of life-limited semiconductors [1]. Outdated adequately support reliable aerospace system design [2].The Semiconductor Reliability project, that launched in April 2013 by the Aerospace Vehicle Systems Institute (A VSI) under the Authority for Expenditure (AFE) 83, （3）developed a practical approach to modeling the random and wearout failure mechanisms of deep sub-micron (<90nm) microcircuits. Unlike prior physics of failure approaches, the methodology was kept simple and was implemented in a spreadsheet. （4）This spreadsheet is provided free of charge to R&M practitioners to help promote understanding and common usage of the methodology. （5）Recipients of the spreadsheet are expected to provide feedback to the A VSI team in return. The project also encourages microcircuit device suppliers to provide reliability information in some form, （6）either by using the spreadsheet or directly providing the cumulative defect fraction (CDF) of their product in theapplication environments.When microcircuit device suppliers provide test data results for their products, the spreadsheet is used to scale the results from test to usage environments.（7）The methodology developed by A VSI differs from traditional Arrhenius methods in that scaling is not only based on temperature but also on voltage, current and frequency. （8）Models of time dependent dielectric breakdown (TDDB), hot carrier injection (HCI), negative bias temperature instability (NBTI) and electromigration (EM) are used to gain an accurate reliability assessment for technologies sensitive to these mechanisms.（9）This paper describes the A VSI reliability research project,the semiconductor microcircuit reliability models, andcommercial and provides examples of the application of these models to support reliable avionics systems design.I TRODUCTIO（10）COTS microcircuit wearout has become a major concern for both military/aerospace (mil/aero) integrators and avionics equipment manufacturer companies (OEMs) . （11）By contrast with packaging reliability issues, microcircuit wearoutelectronics degradations cannot be easily addressed and revealed by means of the typical qualification tests performed on equipment. （12）This is because equipment qualification tests mainly accelerate environmental tresses (thermal cycle vibration, moisture) without the necessary functional constraints required to bring to light the life limited semiconductor issues. In this sense, wearout concerns have to be addressed in an early design phase at the sub-assembly level (Figure 1) through component selection methodologies like the one proposed in this paper.（13）Designing for high reliability applications is a challenge that requires multi-level collaboration to assure vertical integration of the requirements and information flow necessary for design. （14）Figure 2 illustrates the flow of information between members of the supply chain, showing generally the downward flow of requirements and upward flow of analysis and test data needed to design systems to meet the requirements.（15）Mil/aero integrators design aircraft and other platforms for commercial and military applications. （16）All companies in this market segment face the common need to use the best available COTS electronics in high reliability applications. （17）Airborne high reliability mil/aero applications generally experience greater environmental stresses than ground based commercial applications. （18）They drive reliability requirements in the context of thermal profiles, thermal cycling and vibration environments down to their suppliers, the avionics OEMs.（19）Avionics OEMs must find architecture solutions and trade multiple and often conflicting requirements.The avionics OEMs procure electronics devices from the microcircuit device suppliers and must understand how the device will operate in the required environments. （20）Mitigation measures at the avionics OEM level include adequately derating the device in the context of thermal profiles, thermal cycling, vibration, voltage and frequency, and assuring adequate architecture redundancy to guarantee reliability and safety requirements are met throughout the unit life.The microcircuit device suppliers must provide avionics OEMs with enough information and substantiating data so the OEM can make good design decisions while using their devices in electronics modules. The avionics OEM must provide the mil/aero integrators with enough information and substantiating data for them to use the modules in an airborne platform that meets their customer requirements for high functionality, safety and reliability over the operational lifetimes of the equipment.（21）The AFE 83 project aims to break down communication barriers betweenthese market segments to improve practical semiconductor reliability assessments. （22）AFE 83 is working in collaboration with 与...合作microcircuit device suppliers to develop a practicable methodology for predicting the reliability of integrated circuit semiconductors for high reliability applications. It is developing a simple reliability prediction methodology for random failure rate and the time to intrinsic.（23）The random failure rate portion of the model is similar to MIL-HDBK-217 models [3], because it is scaled with device complexity复杂性and use conditions. （24）The physics of failure semiconductor wearout models developed in prior A VSI projects [4] are used as a starting point and will be modified based on the inputs from semiconductor suppliers.2 A VSIA VSI is a research cooperative that addresses issues impacting the aerospace community through international collaborative research conducted by industry, government and academia.（25）（翻译）Members combine their resources and talents to organize and conduct research projects directly benefiting the member organizations and often benefiting the aerospace industry as a whole.（26）A VSI provides a voice for their membership to jointly influence standards, processes and technologies related to aerospace industry.A VSI has invested over a decade of research into electronics reliability, including deep sub-micron (<130nm) semiconductor wearout mechanisms, atmospheric radiation effects and the integration of physics of failure methods into reliability predictions. In 2010, A VSI reliability roadmap project, AFE 74, engaged a broad community of reliability subject matter experts to develop a consensus based Reliability Prediction Technology Roadmap. The Roadmap identified many gaps in reliability prediction capability to support the application needs identified by the stakeholders.（27）The stakeholders require a methodology that results in timely,accurate and necessary information to support design engineering processes that build customer confidence in product reliability. Semiconductor reliability modeling was identified as a high priority by the roadmap project[5].3 APPLICATIO SAerospace applications often require a 20-30 year service life, while COTS electronics usually are designed for shorter market cycles. while COTS electronics usually are designed for high performance and low cost, consequently long termreliability is less of a concern. This leaves less incentive for COTS suppliers to address the need for extended life by applying mitigation measures for these failure mechanisms. If “design for reliability”measures have been applied within the microcircuit, these may be proprietary or not fully understood by the user, so will not figure in the user’s reliability modeling. By focusing at the part level, the AFE 83 spreadsheet allows these mitigation measures to be included by the supplierAvionics systems are designed to rigorous high standards of safety and reliability, with growing processing demands of advanced navigation, guidance and communication systems. High functional density and high speed processing to support the growing avionics systems requirements is enabled through the use of COTS electronics with deep sub-micron (<90 nm) integrated circuit (IC) technologies.Airborne environments are generally harsher than ground based applications. Each flight cycle induces vibration combined with a thermal cycle in many electronics, especially those in partially protected areas such as the electronics bay.（28）Flight environments are harsh on electronics and electronic packaging, due to extremes of temperature, frequent thermal cycling, moisture, vibration, pressure, and atmospheric radiation. （29）In aviation applications, reliability needs can be higher as application conditions become worse.The effect of temperature on reliability may be seen in Fig.3. （30）This chart, provided by Xilinx, is an example of one type of result that could come out of the spreadsheet. Here Xilinx has used an internal tool, described in [6], to compute time to an acceptable percent failure for each of three distinct intrinsic wearout failure mechanisms, as well as the net lifetime value considering all three. They then plotted the result versus use temperature.（31）（翻译）.The AFE 83 spreadsheet similarly can provide the user with calculations of reliability at multiple temperatures, which can be convolved with the application’s temperature vs. time profile (e.g., Fig. 4 for commercial avionics) to enable mission analysis or decisions on whether to provide a more protected environment for the electronics. [7]（32）The results of such reliability calculations are intended to provide reasonable inputs to estimates of system-level reliability. （33）Aggregated, part-level reliability parametric data can be used to compute a reliability estimate at the circuit board, line replaceable unit, or subsystem level. This is based on the system designer’s understanding of the intended operation of the system and the environment in which it is intended to operate.While the proposed methodology is more involved than traditional reliability estimation methods, it may not be necessary to analyze every device in a given unit. （34）For many,conservative estimates will be adequate to meet random failure rate targets, and combination of older technology and limited stress will suggest that wearout life is adequate. The practical understanding of the inner relationship between the effects of the wearout failure mechanisms within a part may be controversial. The source of controversy is whether such effects can be treated as competing effects or if it is more accurate to model them as enhancing each other. （35）Asimplifying assumption in the spreadsheet is that the mechanisms are independent, and that the cumulative failure fractions may be combined numerically without correcting for an interaction between them.Figure 5 shows a sample flow diagram of the decision process an equipment manufacturer may use to determine the application of these analyses or equivalent. （36）It is important to note that if a component is expected to experience early wearout it must have the dominant wearout mechanisms accounted for in a prediction or the results will be misleading.（37）Figure 6 shows another approach to system level analysis where the traditional random failure reliability prediction (Mean Time Between Failures) is normalized to a Mean Life,so that it can be compared with the Geometric Mean Life the wearout of each small geometry part over the usage profile.[8] The Avionics OEM can then understand whether the small geometry part will be a key driver in their ability to meet the MTBF requirement.EM, TDDB, HCI and NBTI have been identified as dominant failure mechanisms for complementary metal-oxide semiconductors (CMOS) [9]. Models for these mechanisms were developed by various researchers and studied during the A VSI projects AFE 17, 71 and 71s1 and validated [10]. They have also been presented in detail in a previous RAMS paper [11], and are summarized here.The AFE 83 spreadsheet offers models for all four mechanisms, based on equations (1)-(4).T2 is the test temperature in K.These equations differ in some ways from traditional forms [12] to make the independent variables those directly controllable by the IC user, (e.g. for EM we use voltage as a proxy for current density.) （38）In addition, alternate forms of voltage acceleration models are provided in the spreadsheet,for different technologies.The failure mechanism AF models for TDDB, EM, HCI and NBTI provide an assessment at the feature level within the logic circuitry of an IC. The effects of these mechanisms become more pronounced as feature sizes shrink and functional density increases. （39）A recent study of field failures of communications technology semiconductors found that failures due to these effects are increasing, in a way similar to Moore’s Law [13] [14]. （40）Models have been developed for NBTI; however as semiconductor feature sizes continue to reduce Positive Bias Temperature Instability (PBTI) may become an issue and models will need to be developed.A traditional approach is to use the Arrhenius model to scale test data to usageenvironments using empirically derived activation energy factors. （41）It does not consider the relying on a generalized temperaturewere developed by various researchers and studied during the related failure rate model. [15] The models provided in the spreadsheet offer a more detailed failure characterization, the ability to consider multiple failure mechanisms and to directly model voltage and frequency effects as well as thermal effects.5 RELIABILITY PREDICTIO OF SEMICO DUCTORSIn any practical reliability analysis the best data available is used, and this is also true for use of the AFE 83 spreadsheet.Due to budget and time constraints and possibly the limited availability of COTS vendor data, analyses are sometimes performed with less than ideal data precision. The ideal strategy is to seek the best data first then fall back on other sources. The following is the prioritized order for finding data and analyzing semiconductor microcircuits:1. Ideal–Supplier provides all the necessary reliability in the usage environments and considering operational stresses2. Second best –Supplier provides some test information, and the user adjusts it to usage conditions using AFE 83 spreadsheet3. Third best –If no test data is available, the user runsIn (1)-(4), their own set of tests and uses AFE 83 spreadsheet to are the acceleration perform prediction4.Fourth option –When no information is available, a factors for T DDB, EM, HCI and NBTI, respectively, prediction can be performed using AFE 83 spreadsheet defaults .The AFE 83 spreadsheet PoF models are used to start the conversation with semiconductor supplier companies about what is needed for the analysis. A potential approach is to have semiconductor manufacturers take the spreadsheet develop it to accurately model their particular product line, and provide it on a webpage for use by reliability engineers applying their product in an electronic system.The prototype spreadsheet has assumed numerical values in places where the device-specific parameters are unknown.The spreadsheet is a starting point and not the final solution is used as a basis for how semiconductors are modeled.Participants and partners in this project will need to describe the methodology for estimating reliability with key objectives of identifying the data needed from device manufacturers and thatdefining the method for integrating the data into a usable result. This is accomplished through guidelines which are to be published as a deliverable of AFE83.The AFE 83 spreadsheet includes a wearout prediction model and assessment based on the four mechanisms from AFE 71s1. An initial slope factor 2 provides an example of how a Weibull analysis may characterize wearout. Although initial parametric model input values are offered in the spreadsheet, the actual parameters of the model will be provided by semiconductor suppliers, or used by them to perform wearout reliability assessment for their customers.一语言点（1）designing 和assuring 都是动词的ing形式作形容词来修饰customer。
微电子专业英语
Abrupt junction 突变结 Accelerated testing 加速实验Acceptor 受主 Acceptor atom 受主原子Accumulation 积累、堆积 Accumulating contact 积累接触Accumulation region 积累区 Accumulation layer 积累层Active region 有源区 Active component 有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源（放大）区Admittance 导纳 Allowed band 允带Alloy-junction device合金结器件 Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物 Aluminum passivation 铝钝化Ambipolar 双极的 Ambient temperature 环境温度Amorphous 无定形的，非晶体的 Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器 Angstrom 埃Anneal 退火 Anisotropic 各向异性的Anode 阳极 Arsenic (AS) 砷Auger 俄歇 Auger process 俄歇过程Avalanche 雪崩 Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子 Background doping 本底掺杂Backward 反向 Backward bias 反向偏置Ballasting resistor 整流电阻 Ball bond 球形键合Band 能带 Band gap 能带间隙Barrier 势垒 Barrier layer 势垒层Barrier width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit time 基区渡越时间 Base transport efficiency基区输运系数Base-width modulation基区宽度调制 Basis vector 基矢Bias 偏置 Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的 Bipolar Junction Transistor (BJT)双极晶体管Bloch 布洛赫 Blocking band 阻挡能带Blocking contact 阻挡接触 Body - centered 体心立方Body-centred cubic structure 体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk 体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination 体复合Burn - in 老化 Burn out 烧毁Buried channel 埋沟 Buried diffusion region 隐埋扩散区Can 外壳 Capacitance 电容Capture cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade 级联 Case 管壳Cathode 阴极 Center 中心Ceramic 陶瓷（的） Channel 沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance 特征阻抗Charge 电荷、充电 Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒 Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching 化学腐蚀法 Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光 Chip 芯片Chip yield 芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage plane 解理面Clock rate 时钟频率 Clock generator 时钟发生器Clock flip-flop 时钟触发器 Close-packed structure 密堆积结构Close-loop gain 闭环增益 Collector 集电极Collision 碰撞 Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性 Compensation 补偿Compensated impurities 补偿杂质 Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Compound Semiconductor 化合物半导体 Conductance 电导Conduction band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration 组态 Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面 Constant-source diffusion恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程 Contact hole 接触孔Contact potential 接触电势 Continuity condition 连续性条件Contra doping 反掺杂 Controlled 受控的Converter 转换器 Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的 Crossover 跨交Critical 临界的 Crossunder 穿交Crucible坩埚 Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density 电流密度 Curvature 曲率Cut off 截止 Current drift/dirve/sharing 电流漂移/驱动/共享Current Sense 电流取样 Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）Dangling bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度De.broglie 德布洛意 Decderate 减速Decibel (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor level 深施主能级Deep impurity level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation 退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽MOS Depletion region 耗尽区 Deposited film 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片（复数dice） Diode 二极管Dielectric 介电的 Dielectric isolation 介质隔离Difference-mode input 差模输入 Differential amplifier 差分放大器Differential capacitance 微分电容 Diffused junction 扩散结Diffusion 扩散 Diffusion coefficient 扩散系数Diffusion constant 扩散常数 Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路 Dipole domain 偶极畴Dipole layer 偶极层 Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体 Direct transition 直接跃迁Discharge 放电 Discrete component 分立元件Dissipation 耗散 Distribution 分布Distributed capacitance 分布电容 Distributed model 分布模型Displacement 位移 Dislocation 位错Domain 畴 Donor 施主Donor exhaustion 施主耗尽 Dopant 掺杂剂Doped semiconductor 掺杂半导体 Doping concentration 掺杂浓度Double-diffusive MOS(DMOS)双扩散MOS.Drift 漂移 Drift field 漂移电场Drift mobility 迁移率 Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化 Dose 剂量Duty cycle 工作周期 Dual-in-line package （DIP）双列直插式封装Dynamics 动态 Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应 Early failure 早期失效Effective mass 有效质量 Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极 Electrominggratim 电迁移Electron affinity 电子亲和势 Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气 Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt (eV) 电子伏Electrostatic 静电的 Element 元素/元件/配件Elemental semiconductor 元素半导体 Ellipse 椭圆Ellipsoid 椭球 Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器 Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试 Energy state 能态Energy momentum diagram 能量-动量(E-K)图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic (低)共溶的Environmental test 环境测试 Epitaxial 外延的Epitaxial layer 外延层 Epitaxial slice 外延片Expitaxy 外延 Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Erasable Programmable ROM (EPROM)可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀 Etchant 刻蚀剂Etching mask 抗蚀剂掩模 Excess carrier 过剩载流子Excitation energy 激发能 Excited state 激发态Exciton 激子 Extrapolation 外推法Extrinsic 非本征的 Extrinsic semiconductor 杂质半导体Face - centered 面心立方 Fall time 下降时间Fan-in 扇入 Fan-out 扇出Fast recovery 快恢复 Fast surface states 快界面态Feedback 反馈 Fermi level 费米能级Fermi-Dirac Distribution 费米-狄拉克分布 Femi potential 费米势Fick equation 菲克方程（扩散） Field effect transistor 场效应晶体管Field oxide 场氧化层 Filled band 满带Film 薄膜 Flash memory 闪烁存储器Flat band 平带 Flat pack 扁平封装Flicker noise 闪烁（变）噪声 Flip-flop toggle 触发器翻转Floating gate 浮栅 Fluoride etch 氟化氢刻蚀Forbidden band 禁带 Forward bias 正向偏置Forward blocking /conducting正向阻断/导通Frequency deviation noise频率漂移噪声Frequency response 频率响应 Function 函数Gain 增益 Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线 Gate 门、栅、控制极Gate oxide 栅氧化层 Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸 Germanium(Ge) 锗Graded 缓变的 Graded (gradual) channel 缓变沟道Graded junction 缓变结 Grain 晶粒Gradient 梯度 Grown junction 生长结Guard ring 保护环 Gummel-Poom model 葛谋-潘模型Gunn - effect 狄氏效应Hardened device 辐射加固器件 Heat of formation 形成热Heat sink 散热器、热沉 Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂 Hell - effect 霍尔效应Heterojunction 异质结 Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS)高性能MOS. Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器 Hot carrior 热载流子Hybrid integration 混合集成Image - force 镜象力 Impact ionization 碰撞电离Impedance 阻抗 Imperfect structure 不完整结构Implantation dose 注入剂量 Implanted ion 注入离子Impurity 杂质 Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物 Induced channel 感应沟道Infrared 红外的 Injection 注入Input offset voltage 输入失调电压 Insulator 绝缘体Insulated Gate FET(IGFET)绝缘栅FET Integrated injection logic集成注入逻辑Integration 集成、积分 Interconnection 互连Interconnection time delay 互连延时 Interdigitated structure 交互式结构Interface 界面 Interference 干涉International system of unions国际单位制 Internally scattering 谷间散射Interpolation 内插法 Intrinsic 本征的Intrinsic semiconductor 本征半导体 Inverse operation 反向工作Inversion 反型 Inverter 倒相器Ion 离子 Ion beam 离子束Ion etching 离子刻蚀 Ion implantation 离子注入Ionization 电离 Ionization energy 电离能Irradiation 辐照 Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管 Junction isolation 结隔离Junction spacing 结间距 Junction side-wall 结侧壁Latch up 闭锁 Lateral 横向的Lattice 晶格 Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Leakage current （泄）漏电流 Level shifting 电平移动Life time 寿命 linearity 线性度Linked bond 共价键 Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻 Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线 Locating and Wiring 布局布线Longitudinal 纵向的 Logic swing 逻辑摆幅Lorentz 洛沦兹 Lumped model 集总模型Majority carrier 多数载流子 Mask 掩膜板，光刻板Mask level 掩模序号 Mask set 掩模组Mass - action law质量守恒定律 Master-slave D flip-flop主从D触发器Matching 匹配 Maxwell 麦克斯韦Mean free path 平均自由程 Meandered emitter junction梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻 Mesa 台面MESFET-Metal Semiconductor金属半导体FETMetallization 金属化 Microelectronic technique 微电子技术Microelectronics 微电子学 Millen indices 密勒指数Minority carrier 少数载流子 Misfit 失配Mismatching 失配 Mobile ions 可动离子Mobility 迁移率 Module 模块Modulate 调制 Molecular crystal分子晶体Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管 Multiplication 倍增Modulator 调制 Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块 Multiplication coefficient倍增因子Naked chip 未封装的芯片（裸片） Negative feedback 负反馈Negative resistance 负阻 Nesting 套刻Negative-temperature-coefficient 负温度系数 Noise margin 噪声容限Nonequilibrium 非平衡 Nonrolatile 非挥发（易失）性Normally off/on 常闭/开 Numerical analysis 数值分析Occupied band 满带 Officienay 功率Offset 偏移、失调 On standby 待命状态Ohmic contact 欧姆接触 Open circuit 开路Operating point 工作点 Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon =photon 光子 Optical quenching光猝灭Optical transition 光跃迁 Optical-coupled isolator光耦合隔离器Organic semiconductor有机半导体 Orientation 晶向、定向Outline 外形 Out-of-contact mask非接触式掩模Output characteristic 输出特性 Output voltage swing 输出电压摆幅Overcompensation 过补偿 Over-current protection 过流保护Over shoot 过冲 Over-voltage protection 过压保护Overlap 交迭 Overload 过载Oscillator 振荡器 Oxide 氧化物Oxidation 氧化 Oxide passivation 氧化层钝化Package 封装 Pad 压焊点Parameter 参数 Parasitic effect 寄生效应Parasitic oscillation 寄生振荡 Passination 钝化Passive component 无源元件 Passive device 无源器件Passive surface 钝化界面 Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压 Peak voltage 峰值电压Permanent-storage circuit 永久存储电路 Period 周期Periodic table 周期表 Permeable - base 可渗透基区Phase-lock loop 锁相环 Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导 Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件 Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂 Pin 管脚Pinch off 夹断 Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺 Planar transistor 平面晶体管Plasma 等离子体 Plezoelectric effect 压电效应Poisson equation 泊松方程 Point contact 点接触Polarity 极性 Polycrystal 多晶Polymer semiconductor聚合物半导体 Poly-silicon 多晶硅Potential (电)势 Potential barrier 势垒Potential well 势阱 Power dissipation 功耗Power transistor 功率晶体管 Preamplifier 前置放大器Primary flat 主平面 Principal axes 主轴Print-circuit board(PCB) 印制电路板 Probability 几率Probe 探针 Process 工艺Propagation delay 传输延时 Pseudopotential method 膺势发Punch through 穿通 Pulse triggering/modulating 脉冲触发/调制PulseWiden Modulator(PWM) 脉冲宽度调制Punchthrough 穿通 Push-pull stage 推挽级Quality factor 品质因子 Quantization 量子化Quantum 量子 Quantum efficiency量子效应Quantum mechanics 量子力学 Quasi – Fermi－level准费米能级Quartz 石英Radiation conductivity 辐射电导率 Radiation damage 辐射损伤Radiation flux density 辐射通量密度 Radiation hardening 辐射加固Radiation protection 辐射保护 Radiative - recombination辐照复合Radioactive 放射性 Reach through 穿通Reactive sputtering source 反应溅射源 Read diode 里德二极管Recombination 复合 Recovery diode 恢复二极管Reciprocal lattice 倒核子 Recovery time 恢复时间Rectifier 整流器（管） Rectifying contact 整流接触Reference 基准点基准参考点 Refractive index 折射率Register 寄存器 Registration 对准Regulate 控制调整 Relaxation lifetime 驰豫时间Reliability 可靠性 Resonance 谐振Resistance 电阻 Resistor 电阻器Resistivity 电阻率 Regulator 稳压管（器）Relaxation 驰豫 Resonant frequency共射频率Response time 响应时间 Reverse 反向的Reverse bias 反向偏置Sampling circuit 取样电路 Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷 Saturated current range电流饱和区Saturation region 饱和区 Saturation 饱和的Scaled down 按比例缩小 Scattering 散射Schockley diode 肖克莱二极管 Schottky 肖特基Schottky barrier 肖特基势垒 Schottky contact 肖特基接触Schrodingen 薛定厄 Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶 Segregation 分凝Selectivity 选择性 Self aligned 自对准的Self diffusion 自扩散 Semiconductor 半导体Semiconductor-controlled rectifier 可控硅 Sendsitivity 灵敏度Serial 串行/串联 Series inductance 串联电感Settle time 建立时间 Sheet resistance 薄层电阻Shield 屏蔽 Short circuit 短路Shot noise 散粒噪声 Shunt 分流Sidewall capacitance 边墙电容 Signal 信号Silica glass 石英玻璃 Silicon 硅Silicon carbide 碳化硅 Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅 Silicon On Insulator 绝缘硅Siliver whiskers 银须 Simple cubic 简立方Single crystal 单晶 Sink 沉Skin effect 趋肤效应 Snap time 急变时间Sneak path 潜行通路 Sulethreshold 亚阈的Solar battery/cell 太阳能电池 Solid circuit 固体电路Solid Solubility 固溶度 Sonband 子带Source 源极 Source follower 源随器Space charge 空间电荷 Specific heat(PT) 热Speed-power product 速度功耗乘积 Spherical 球面的Spin 自旋 Split 分裂Spontaneous emission 自发发射 Spreading resistance扩展电阻Sputter 溅射 Stacking fault 层错Static characteristic 静态特性 Stimulated emission 受激发射Stimulated recombination 受激复合 Storage time 存储时间Stress 应力 Straggle 偏差Sublimation 升华 Substrate 衬底Substitutional 替位式的 Superlattice 超晶格Supply 电源 Surface 表面Surge capacity 浪涌能力 Subscript 下标Switching time 开关时间 Switch 开关Tailing 扩展 Terminal 终端Tensor 张量 Tensorial 张量的Thermal activation 热激发 Thermal conductivity 热导率Thermal equilibrium 热平衡 Thermal Oxidation 热氧化Thermal resistance 热阻 Thermal sink 热沉Thermal velocity 热运动 Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术 Thin-film hybrid IC薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体 Threshlod 阈值Thyistor 晶闸管 Transconductance 跨导Transfer characteristic 转移特性 Transfer electron 转移电子Transfer function 传输函数 Transient 瞬态的Transistor aging(stress) 晶体管老化 Transit time 渡越时间Transition 跃迁 Transition-metal silica 过度金属硅化物Transition probability 跃迁几率 Transition region 过渡区Transport 输运 Transverse 横向的Trap 陷阱 Trapping 俘获Trapped charge 陷阱电荷 Triangle generator 三角波发生器Triboelectricity 摩擦电 Trigger 触发Trim 调配调整 Triple diffusion 三重扩散Truth table 真值表 Tolerahce 容差Tunnel(ing) 隧道（穿） Tunnel current 隧道电流Turn over 转折 Turn - off time 关断时间Ultraviolet 紫外的 Unijunction 单结的Unipolar 单极的 Unit cell 原（元）胞Unity-gain frequency 单位增益频率 Unilateral-switch单向开关Vacancy 空位 Vacuum 真空Valence(value) band 价带 Value band edge 价带顶Valence bond 价键 Vapour phase 汽相Varactor 变容管 Varistor 变阻器Vibration 振动 Voltage 电压Wafer 晶片 Wave equation 波动方程Wave guide 波导 Wave number 波数Wave-particle duality 波粒二相性 Wear-out 烧毁Wire routing 布线 Work function 功函数Worst-case device 最坏情况器件Yield 成品率Zener breakdown 齐纳击穿Zone melting 区熔法。
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微电子学专业词汇Abe absorb in 集中精力做某事access control list 访问控制表active attack 主动攻击activeX control ActiveX控件advanced encryption standard AES,高级加密标准algorithm 算法alteration of message 改变消息application level attack 应用层攻击argument 变量asymmetric key cryptography 非对称密钥加密attribute certificate属性证书authentication 鉴别authority 机构availability 可用性Abrupt junction 突变结Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区Admittance 导纳Allowed band 允带Alloy-junction device 合金结器件Aluminum(Aluminium) 铝Aluminum – oxide 铝氧化物Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度Amorphous 无定形的，非晶体的 Amplifier 功放扩音器放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Arsenic (AS) 砷Auger 俄歇Auger process 俄歇过程Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Bbrute-force attack 强力攻击Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ballasting resistor 整流电阻Ball bond 球形键合Band 能带Band gap 能带间隙Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency 基区输运系数Base-width modulation 基区宽度调制 Basis vector 基矢Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT) 双极晶体管Bloch 布洛赫Blocking band 阻挡能带Blocking contact 阻挡接触Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Bootstrap circuit 自举电路Bootstrapped emitter follower 自举射极跟随器Boron 硼Borosilicate glass 硼硅玻璃Boundary condition 边界条件Bound electron 束缚电子Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊Brillouin zone 布里渊区Built-in 内建的Build-in electric field 内建电场Bulk 体 / 体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn - in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区CCaesar cipher 凯撒加密法capacitance 电容capturecategorize 分类chaining mode 链接模式challenge 质询cipher feedback 加密反馈collision 冲突combine 集成compatibility n.[计]兼容性component 原件confidentiality 保密性constraint 约束corresponding to 相应的Cryptography 密码学Can 外壳 Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carrier 载流子、载波Carry bit 进位位Carry-in bit 进位输入Carry-out bit 进位输出Cascade 级联Case 管壳Cathode 阴极Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge neutrality condition 电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动 / 交换 / 共享/ 转移 / 存储Chemmical etching 化学腐蚀法Chemically-Polish 化学抛光Chemmically-Mechanically Polish (CMP) 化学机械抛光Chip 芯片Chip yield 芯片成品率Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-packed structure 密堆积结构Close-loop gain 闭环增益Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极 / 集电极 / 发射极连接Common-gate/drain/source connection 共栅 / 漏 / 源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function 余误差函数Compound Semiconductor 化合物半导体 Conductance 电导Conduction band (edge) 导带 ( 底 ) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 组态Conlomb 库仑Conpled Configuration Devices 结构组态 Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触 Contamination 治污Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Continuity condition 连续性条件Contra doping 反掺杂Controlled 受控的Converter 转换器Conveyer 传输器Copper interconnection system 铜互连系统Couping 耦合Covalent 共阶的Crossover 跨交Critical 临界的Crossunder 穿交Crucible 坩埚Crystal defect/face/orientation/lattice 晶体缺陷 / 晶面 / 晶向 / 晶格Current density 电流密度Curvature 曲率Cut off 截止Current drift/dirve/sharing 电流漂移 / 驱动 / 共享Current Sense 电流取样Curvature 弯曲Custom integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（ Cz 法直拉晶体 J ）Ddedicate 专用的，单一的denial of service(DOS)拒绝服务攻击diffusion 扩散digital signature algorithm 数字签名算法dynamic 动态的Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Debye length 德拜长度De.broglie 德布洛意Decderate 减速Decibel (dB) 分贝Decode 译码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏 / 开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽 MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Die 芯片（复数 dice ）Diode 二极管Dielectric 介电的Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffused junction 扩散结Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容 / 势垒 / 电流/ 炉Digital circuit 数字电路Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Discharge 放电Discrete component 分立元件Dissipation 耗散Distribution 分布Distributed capacitance 分布电容istributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体oping concentration 掺杂浓度Double-diffusive MOS(DMOS) 双扩散 MOS. Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干 / 湿法氧化Dose 剂量Duty cycle 工作周期Dual-in-line package （ DIP ）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Eexpertise 专长extractorEarly effect 厄利效应Early failure 早期失效Effective mass 有效质量Einstein relation(ship) 爱因斯坦关系Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器Electrode 电极Electrominggratim 电迁移Electron affinity 电子亲和势Electronic -grade 电子能Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光Electron gas 电子气Electron-grade water 电子级纯水Electron trapping center 电子俘获中心 Electron Volt (eV) 电子伏Electrostatic 静电的Element 元素 / 元件 / 配件Elemental semiconductor 元素半导体 Ellipse 椭圆Ellipsoid 椭球Emitter 发射极Emitter-coupled logic 发射极耦合逻辑 Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量 - 动量(E-K) 图 Enhancement mode 增强型模式Enhancement MOS 增强性MOS Entefic ( 低 ) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Expitaxy 外延Equivalent curcuit 等效电路Equilibrium majority /minority carriers 平衡多数 / 少数载流子Erasable Programmable ROM (EPROM) 可搽取（编程）存储器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Ffabrication 伪造fleshed outFace - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快界面态Feedback 反馈Fermi level 费米能级Fermi-Dirac Distribution 费米 - 狄拉克布Femi potential 费米势Fick equation 菲克方程（扩散）Field effect transistor 场效应晶体管Field oxide 场氧化层Filled band 满带Film 薄膜Flash memory 闪烁存储器Flat band 平带Flat pack 扁平封装Flicker noise 闪烁（变）噪声Flip-flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Forbidden band 禁带Forward bias 正向偏置Forward blocking /conducting 正向阻断 / 导通Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数GgridGain 增益Gallium-Arsenide(GaAs) 砷化钾Gamy ray r 射线Gate 门、栅、控制极Gate oxide 栅氧化层Gauss （ ian ）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生 - 复合Geometries 几何尺寸Germanium(Ge) 锗Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Grown junction 生长结Guard ring 保护环Gummel-Poom model 葛谋 - 潘模型Gunn - effect 狄氏效应Hhandle 处理hierarchical 层次Hardened device 辐射加固器件Heat of formation 形成热Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Heavy saturation 重掺杂Hell - effect 霍尔效应Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor （ HBT ）异质结双极型晶体High field property 高场特性High-performance MOS.( H-MOS) 高性能 MOS.Hormalized 归一化Horizontal epitaxial reactor 卧式外延反应器Hot carrior 热载流子Hybrid integration 混合集成Iimplementinductance 电感initialization vector IV初始化向量integrity完整性interception 截获interruption中断Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Indium tin oxide (ITO) 铟锡氧化物 Induced channel 感应沟道Infrared 红外的Injection 注入Input offset voltage 输入失调电压Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体 Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Jjava applet Java小程序Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Kkey wrapping 密钥包装LLatch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力 / 晶胞 / 晶格 / 晶格常熟 / 晶格缺陷 / 晶格畸变Leakage current （泄）漏电流Level shifting 电平移动Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid － phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Load line or Variable 负载线Locating and Wiring 布局布线Longitudinal 纵向的Logic swing 逻辑摆幅Lorentz 洛沦兹Lumped model 集总模型Mmasquerade伪装message digest 消息摘要modification 修改multidrop 多站, 多支路Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从 D 触发器Matching 匹配Maxwell 麦克斯韦Mean free path 平均自由程Meandered emitter junction 梳状发射极结Mean time before failure (MTBF) 平均工作时间Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体 FETMetallization 金属化Microelectronic technique 微电子技术Microelectronics 微电子学Millen indices 密勒指数Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobile ions 可动离子Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片 ICMOSFET 金属氧化物半导体场效应晶体管Mos. Transistor(MOST )MOS. 晶体管 Multiplication 倍增Modulator 调制Multi-chip IC 多芯片 ICMulti-chip module(MCM) 多芯片模块 Multiplication coefficient 倍增因子Nnetwork level attack网络层攻击non-repudiation 不可抵赖Naked chip 未封装的芯片（裸片）Negative feedback 负反馈Negative resistance 负阻Nesting 套刻Negative-temperature-coefficient 负温度系数Noise margin 噪声容限Nonequilibrium 非平衡Nonrolatile 非挥发（易失）性Normally off/on 常闭/ 开Numerical analysis 数值分析Ooptimize 使最优化Occupied band 满带Officienay 功率Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大器Optical photon =photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Pparallelparasitic 寄生的partition [简明英汉词典]n.分割, 划分, 瓜分, 分开, 隔离物vt.区分, 隔开, 分割presentation n.介绍, 陈述, 赠送, 表达primitiveprivateprobablyproceedingprofoundpropertypseudocollision伪冲突Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Passination 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Periodic table 周期表Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photoenic devices 光子器件Photolithographic process 光刻工艺(photo) resist （光敏）抗腐蚀剂Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plezoelectric effect 压电效应Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Potential ( 电 ) 势 Potential barrier 势垒Potential well 势阱Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Principal axes 主轴Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Process 工艺Propagation delay 传输延时Pseudopotential method 膺势发Punch through 穿通Pulse triggering/modulating 脉冲触发 / 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级QQuality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi － level 准费米能级Quartz 石英Rrelease of message contents发布消息内容register 寄存器registration 注册, 报到, 登记resistance 电阻routingrunning key cipher 运动密钥加密法Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radioactive 放射性Reach through 穿通Reactive sputtering source 反应溅射源Read diode 里德二极管Recombination 复合Recovery diode 恢复二极管Reciprocal lattice 倒核子Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Reference 基准点基准参考点Refractive index 折射率Register 寄存器Registration 对准Regulate 控制调整Relaxation lifetime 驰豫时间Reliability 可*性Resonance 谐振Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Relaxation 驰豫Resonant frequency 共射频率Response time 响应时间Reverse 反向的Reverse bias 反向偏置Sscratchscratchpad 缓存secret 密钥substrate 衬底synchronizesynthesizesymmetric key cryptography 对称密钥加密sophisticate 复杂的suspend 悬挂，延缓Sampling circuit 取样电路Sapphire 蓝宝石（ Al2O3 ）Satellite valley 卫星谷Saturated current range 电流饱和区Saturation region 饱和区Saturation 饱和的Scaled down 按比例缩小Scattering 散射Schockley diode 肖克莱二极管Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Schrodingen 薛定厄Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor-controlled rectifier 可控硅Sendsitivity 灵敏度Serial 串行 / 串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘硅Siliver whiskers 银须Simple cubic 简立方Single crystal 单晶Sink 沉Skin effect 趋肤效应Snap time 急变时间Sneak path 潜行通路Sulethreshold 亚阈的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Specific heat(PT) 热Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spreading resistance 扩展电阻Sputter 溅射Stacking fault 层错Static characteristic 静态特性Stimulated emission 受激发射Stimulated recombination 受激复合Storage time 存储时间Stress 应力Straggle 偏差Sublimation 升华Substrate 衬底Substitutional 替位式的Superlattice 超晶格Supply 电源Surface 表面Surge capacity 浪涌能力Subscript 下标Switching time 开关时间Switch 开关Ttoken 令牌trace 追溯traffic analysis 分析通信量Trojan horse 特洛伊木马Tailing 扩展Terminal 终端Tensor 张量Tensorial 张量的Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thermoelectricpovoer 温差电动势率Thick-film technique 厚膜技术Thin-film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体 Threshlod 阈值Thyistor 晶闸管Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Triangle generator 三角波发生器Triboelectricity 摩擦电Trigger 触发Trim 调配调整Triple diffusion 三重扩散Truth table 真值表Tolerahce 容差Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn over 转折Turn - off time 关断时间UUltraviolet 紫外的Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity-gain frequency 单位增益频率Unilateral-switch 单向开关Vvarietyvectorverify 检验victoryverticalvia 通孔virus 病毒Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Varistor 变阻器Vibration 振动Voltage 电压WWorm 蠕虫Wafer 晶片Wave equation 波动方程Wave guide 波导Wave number 波数Wave-particle duality 波粒二相性Wear-out 烧毁Wire routing 布线Work function 功函数Worst-case device 最坏情况器件YYield 成品率ZZener breakdown 齐纳击穿Zone melting 区熔法。