PDTC123YT,215;PDTC123YE,115;PDTC123YU,115;PDTC123YM,315;PDTC123YK,115;中文规格书,Datasheet资料

mW mW mW mW mW mW °C °C °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
peak collector current
single pulse;
-
tp ≤ 1ms
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT416
[1] -
SOT346
[1] -
SOT883
[2][3] -
SOT54
[1] -
SOT23
[1] -
SOT323
[1] -
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage
SOT54 variant
1
input (base)
2
output (collector)
3
GND (emitter)
SOT23; SOT323; SOT346; SOT416
1
input (base)
2
GND (emitter)
3
output (collector)
SOT883 1 2 3
input (base) GND (emitter) output (collector)
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking code[1] 19 31 G7 TC123Y *AL *19
PDTC123Y_SER_4
6. Thermal characteristics
Table 7. Symbol Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air junction to ambient
SOT416
Name Description
PDTC123YE SC-75 plastic surface mounted package; 3 leads
PDTC123YK SC-59A plastic surface mounted package; 3 leads
PDTC123YM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm
open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
VI
input voltage
positive
-
negative
-
IO
output current (DC)
-
ICM
NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number
Package
NXP
PDTC123YE
SOT416
Hale Waihona Puke PDTC123YKSOT346
PDTC123YM
SOT883
PDTC123YS[1]
PNP complement
PDTA123YE PDTA123YK PDTA123YM PDTA123YS PDTA123YT PDTA123YU
1.2 Features
Built-in bias resistors Simplifies circuit design
Reduces component count Reduces pick and place costs
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
3. Ordering information
4. Marking
Table 4. Ordering information
Type number Package
-
1.54 2.2
3.6 4.5
Max Unit
50
V
100 mA
2.86 kΩ
5.5
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NXP Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Simplified outline Symbol
1 2 3
001aab347
2
R1
1
R2
3
006aaa145
1 2
3
001aab348
2
R1
1
R2
3
006aaa145
1 2 3
001aab447
2
R1
1
R2
3
006aaa145
3
1
2
006aaa144
3
R1
1
R2
2
sym007
1 3
2
Transparent top view
Tstg
storage temperature
−65
Tj
junction temperature
-
Tamb
ambient temperature
−65
Max 50 50 5
+12 −5 100 100
150 250 250 500 250 200 +150 150 +150
Unit V V V
V V mA mA
SOT346
SOT883
SOT54
SOT23
SOT323
Min Typ
[1] -
-
[1] -
-
[2][3] -
-
[1] -
-
[1] -
-
[1] -
-
Max
833 500 500 250 500 625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
VI(off) VI(on) R1
1.3 Applications
General-purpose switching and amplification
Inverter and interface circuits
Circuit drivers
1.4 Quick reference data
Table 2. Symbol VCEO IO R1 R2/R1
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
Product data sheet
/
Rev. 04 — 16 November 2009
© NXP B.V. 2009. All rights reserved.
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NXP Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A; Tj = 150 °C
VEB = 5 V; IC = 0 A
hFE VCEsat
DC current gain
collector-emitter saturation voltage
VCE = 5 V; IC = 5 mA IC =10 mA; IB = 0.5 mA
PDTC123YS[1] SC-43A plastic single-ended leaded (through hole) package; 3 leads