SIT1602-SITIME规格书
SiT1602数据手册-SiTime硅晶振SIT1602规格书
Startup and Resume Timing
Table 2. Pin Description
Pin Symbol Output Enable 1 OE/ ST/NC Standby No Connect 2 3 4 GND OUT VDD Power Output Power
[1]
Functionality H : specified frequency output L: output is high impedance. Only output driver is disabled. H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 1 has no function. Electrical ground Oscillator output Power supply voltage[2]
Top View
OE/ST/NC
1 4
VDD
GND
2
3
OUT
Figure 1. Pin Assignments
Notes: 1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
SiT8008数据手册-SiTime低功耗1-110MHz任意频率单端有源晶振
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage.
+50 ppm Operating Temperature Range +70 °C
Hale Waihona Puke – +85 °C Industrial Supply Voltage and Current Consumption 1.8 2.5 2.8 3.0 3.3 – 3.8 3.7 3.5 – – 2.1 1.1 1.98 2.75 3.08 3.3 3.63 3.63 4.5 4.2 4.1 4.2 4.0 4.3 2.5 V V V V V V mA mA mA mA mA A A Contact SiTime for 1.5V support
Table 2. Pin Description
Pin Symbol Output Enable 1 OE/ST/NC Standby No Connect 2 3 4 GND OUT VDD Power Output Power Functionality H[1]: specified frequency output L: output is high impedance. Only output driver is disabled. H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 1 has no function. Electrical ground Oscillator output Power supply voltage[2] OE/ST/NC
Sitime产品选型手册中文2012
p p
p p
-
p p
-
压控振荡器 — VCXO
SiT3807 网络、电信、 医疗、ATE、 视频、xDSL、 及嵌入式系统 VCXO • 可选标准频率，最大程度降低 成本 • 超低相位抖动: 0.5 psrms • 最广牵引范围 • 1%牵引线性度 • 超低相位抖动: 0.5 psrms 1.5-45 (标准频点范围) 1-80 10, 25, 50 80-220 25, 50 25-200 (1%线性度) CMOS LVTTL 32 70 µA (待机) C, I 2.5x2.0 mm 3.2x2.5 mm 5.0x3.2 mm 7.0x5.0 mm
-
-
要求低EMI的计算机 设备应用 应用、服务器
SiT9002
SSXO
• 扩频设计: 中心展频或向下 展频
1-220
25, 50
-
LVPECL LVDS HCSL CML
48-75
C, I
5.0x3.2 mm 7.0x5.0 mm
p
p
-
p
差分压控振荡器 — VCXO
SiT3821 网络、电信、 医疗、ATE、 视频、xDSL、 嵌入式系统 SiT3822 VCXO • 最佳稳定度 • 1%牵引线性度 • 超低相位抖动: 0.5 psrms 220-625 1-220 10, 25, 50 25-1600 (1% 牵引线 性度) LVPECL LVDS 55-69 C, I 5.0x3.2 mm 7.0x5.0 mm
单端数控振荡器 — DCXO
网络及电信
SiT3907
DCXO
• 单引脚串口可编程 • 0.1% 牵引线性度动 • 超低相位抖动 0.5 psrms
米歇尔电子欧洲有限公司产品说明-GT2105-QMBDS HMI小型HMI扩展材料说明书
MITSUBISHI ELECTRIC EUROPE B.V.Industrial AutomationMitsubishi-Electric-Platz 1 40882 Ratingen DeutschlandTelefon +49 (0) 2102 486-0 Fax +49 (0) 2102 486-1120https:///faMATERIAL FACT SHEET297852GT2105-QMBDSGeneral DataProduct Hierarchy IAT93001HMISmall HMI Ext. Material Group10 STANDARD ITEM ABC Indicator B (Limited Availability from Stock) e-shop:https:///mee/FA_IA/EUR/en/p/000000000000297852FA-HMI: Human Machine InterfaceSeries GOT2000 SERIES Type GT21 MODEL Power Supply (V)24 Current Type DC Display TFT Display Colour MONOCHROME Display Size (Inch)5,7 Resolution (Pixels)320X240 Internal Memory Capacity (MB)9 Memory Card Slot SD USB1 RS-2321 RS-422/4851 Network Options MODBUS, ETHERNET Protection Class IP67FProduct Dimensions & WeightWidth (mm)164 Height (mm)135 Depth (mm)56 Weight (kg)0,7Logistic Dimensions & Gross WeightLength (cm)23,5 Width (cm)15,5 Height (cm)9,0 Gross Weight (kg)0,833 Volume (cdm)3,278Stock DataPlanned Delivery Time (Days)221Life CycleSales Start01.07.2016 Predecessor218492 / GT1050-QBBDAdditional Product InformationBinding Tariff Information DEBTI-10694/21-1 BTI validity date10.10.2024 Battery included YES – CHECK SPARE PART LISTExport DataCommodity Code85371091 Legal Control (Dual Use List)Not Listed Country of Origin Japan (JP) Preference Status (Supplier Declaration)Non EUEnvironmentalDangerous Goods Class NO Dangerous Goods Identifier NO RoHS Compliance COMPLIANT WEEE B2BConformityCE COMPLIANT UL/cUL COMPLIANT EAC COMPLIANT Shipping Approvals ABS,BV,DNV,LR,NK,RINA UKCA COMPLIANTDocumentation & Media DataManual URL Indicator https:///fa/advanced-search?ct=document&doc-cats=bltdae25c2bd5f2ff94&q=GT2105-QMBDS&doc-lang=en Certificates URL Indicator https:///fa/advanced-search?ct=document&doc-cats=blt8050dd1408c11cc2&q=GT2105-QMBDS&doc-lang=en Product PackagingCardboard (g)201 Other paper (g)0 Aluminum (g)0 Steel (g)0 Styrofoam (g)0 Other plastic (g)1 Wood (g)0 Glass (g)0 Others (g)0Spare partsMaterial Description Quantity Unit306884GT2105-QxBDS REAR COVER1PC306895GT2105-QxBDS FRONT COVER1PC306896GT2105-QxBDS ENVIRONMENT SHEET1PC306897GT2105-QxBDS TOUCHPANEL1PC306898GT2105-QxBDS POWER CONNECTOR1PC306899GT2105-QxBDS FASTENING PLATE1PC306900GT2105-QMBDS LCD DISPLAY1PC306902GT2105-QxBDS SD-CARD BOARD1PC306903GT2105-QMBDS CPU + INTERFACE BOARD1PC306904GT2105-QMBDS POWER + INTERFACE BOARD1PCCompatible productsMaterial Description / Price List Text / Classification163953GT01-C30R4-25PConn.cable AnS/QnAS/A/QnA/F-CPU+GOT2000/GOT1000/GOT Simple;3mClass 100100303: FA-HMI: Cable163954GT01-C100R4-25PGOT Connection cable for CPU (MELSEC AnS/QnAS or A/QnA) and GOT1000-series; 10 mClass 100100303: FA-HMI: Cable163955GT01-C200R4-25PGOT Connection cable for CPU (MELSEC AnS/QnAS or A/QnA) and GOT1000-series; 20 mClass 100100303: FA-HMI: Cable163956GT01-C300R4-25PGOT Connection cable for CPU (MELSEC AnS/QnAS or A/QnA) and GOT1000-series; 30 mClass 100100303: FA-HMI: Cable200496GT10-C30R4-25PGOT Connection cable for CPU (MELSEC AnS/QnAS/A/QnA) and GT1020/GT1030; 3 mClass 100100303: FA-HMI: Cable200497GT10-C100R4-25PGOT Connection cable for CPU (MELSEC AnS/QnAS/A/QnA) and GT1020/GT1030; 10 mClass 100100303: FA-HMI: Cable280470GT21-C30R4-25P5GOT2000;RS-422 connection cable between Q CPU and GT2103-PMBD;3mClass 100100303: FA-HMI: CableMaterial Description / Price List Text / Classification280471GT21-C100R4-25P5GOT2000;RS-422 connection cable between Q CPU and GT2103-PMBD;10mClass 100100303: FA-HMI: Cable280474GT21-C200R4-25P5GOT2000;RS-422 connection cable between Q CPU and GT2103-PMBD;20mClass 100100303: FA-HMI: Cable280475GT21-C300R4-25P5GOT2000;RS-422 connection cable between Q CPU and GT2103-PMBD;30mClass 100100303: FA-HMI: Cable293474Ethernetcable GOT Add on KitEthernetcable GOT Add on KitClass 100100303: FA-HMI: Cable。
SITIME硅晶振SiT9120差分振荡器规格书
www.yxc.hk
SiT9120
Standard Frequency Differential Oscillator
The Smart Timing Choice The Smart Timing Choice
Electrical Characteristics (continued)
Parameter and Conditions Output Disable Leakage Current Standby Current VOD Magnitude Change Offset Voltage VOS Magnitude Change Rise/Fall Time OE Enable/Disable Time RMS Period Jitter Symbol I_leak I_std VOD VOS VOS Tr, Tf T_oe T_jitt Min. – – – 1.125 – – – – – – – Typ. – – – 1.2 – 495 – 1.2 1.2 1.2 0.6 Max. 1 100 50 1.375 50 600 115 1.7 1.7 1.7 0.85 Unit A A mV V mV ps ns ps ps ps ps OE = Low ST = Low, for all Vdds See Figure 2 See Figure 2 See Figure 2 20% to 80%, see Figure 2 f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period f = 100 MHz, VDD = 3.3V or 2.5V f = 156.25 MHz, VDD = 3.3V or 2.5V f = 212.5 MHz, VDD = 3.3V or 2.5V f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Condition
维斯特电子产品说明书
Dimensions: [mm]sectional drawing A-AAAScale- 4:1702941500Cautions and Warnings:The following conditions apply to all goods within the product series of WA-SNSR ofWürth Elektronik eiSos GmbH & Co. KG:General:•This mechanical component is designed and manufactured for use in general electronic equipment.•Würth Elektronik must be asked for written approval (following the PPAP procedure) before incorporating the components into any equipment in fields such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network, etc. where higher safety and reliability are especially required and/or if there is the possibility of direct damage or human injury.•Mechanical components that will be used in safety-critical or high-reliability applications, should be pre-evaluated by the customer. •The component is designed and manufactured to be used within the datasheet specified values. If the usage and operation conditions specified in the datasheet are not met, the component may be damaged or dissolved.•Do not drop or impact the components, the component may be damaged.•Würth Elektronik products are qualified according to international standards, which are listed in each product reliability report. Würth Elektronik does not warrant any customer qualified product characteristics beyond Würth Elektroniks’ specifications, for its validity and sustainability over time.•The responsibility for the function of the application of the customer specific products and use in a particular customer design is always the full and autonomous responsibility of the customer. All technical specification for standard products also apply to customer specific products.Product Specific:Cleaning and Washing:•Washing agents used during the production to clean the customer application might damage or change the characteristics of the components. Washing agents may have a negative effect on the long-term functionality of the product.•Using a brush during the cleaning process may damage the component. Therefore, we do not recommend using a brush during the PCB cleaning process.Potting and Coating:•If the product is potted in the customer application, the potting material might shrink or expand during and after hardening. Shrinking could lead to an incomplete seal, allowing contaminants into the components. Expansion could damage the components. Werecommend a manual inspection after potting or coating to avoid these effects. Storage Conditions:• A storage of Würth Elektronik products for longer than 12 months is not recommended. Within other effects, the terminals may suffer degradation, resulting in bad processability. Therefore, all products shall be used within the period of 12 months based on the day of shipment.•Do not expose the components to direct sunlight.•The storage conditions in the original packaging are defined according to DIN EN 61760-2.•The storage conditions stated in the original packaging apply to the storage time and not to the transportation time of the components. Packaging:•The packaging specifications apply only to purchase orders comprising whole packaging units. If the ordered quantity exceeds or is lower than the specified packaging unit, packaging in accordance with the packaging specifications cannot be ensured. Handling:•The maximum permissible torques must be complied with to prevent mechanical destruction of the component and PCB.•If a component is pre-assembled with an adhesive tape, the adhesive duration cannot be guaranteed. This depends on the surface where the component will be mounted on. It also depends on the environmental conditions the component is exposed to. The customer has to evaluate this for his specific application.•Violation of the technical product specifications will void the warranty.•Coated metal parts may have spots and/or deposits because of the rinsing and drying process during plating. The storage and processability are not affected.•The temperature rise of the component must be taken into consideration. The operating temperature is comprised of ambient temperature and temperature rise of the component.The operating temperature of the component shall not exceed the maximum temperature specified.These cautions and warnings comply with the state of the scientific and technical knowledge and are believed to be accurate and reliable.However, no responsibility is assumed for inaccuracies or incompleteness.Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODJSa001.0012021-11-17DIN ISO 2768-1mDESCRIPTIONWA-SNSR Self-Retaining SpacerORDER CODE702941500BUSINESS UNIT STATUS PAGEImportant NotesThe following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the areas, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibility for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime cannot be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component. Therefore, customer is cautioned to verify that data sheets are current before placing orders. The current data sheets can be downloaded at .3. Best Care and AttentionAny product-specific notes, cautions and warnings must be strictly observed. Any disregard will result in the loss of warranty.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve specific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Section 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a standard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability expectancy before or when the product for application design-in disposal is considered. The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG. Würth Elektronik eiSos GmbH & Co. KG does not warrant or represent that any license, either expressed or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, application, or process in which Würth Elektronik eiSos GmbH & Co. KG components or services are used.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODJSa001.0012021-11-17DIN ISO 2768-1mDESCRIPTIONWA-SNSR Self-Retaining SpacerORDER CODE702941500BUSINESS UNIT STATUS PAGE。
LCD16032B 液晶显示模块产品说明书
LCM16032B使用说明书目 录序号 内 容 标 题 页码1 概述 22 字符型模块的特点 23 外形及接口引脚功能 2~34 基本原理 45 技术参数 46 时序特性 5～67 指令功能及硬件接口 6～101．概述方便、带中文字库、显示清晰，广泛应用于各种人机交流面板。
LCM16032B 液晶显示模块是160×32 点阵的汉字图形型液晶显示模块，可显示汉字及 图形，内置8192 个中文汉字（16X16 点阵）、128 个字符（8X16 点阵）及 64X256点阵显示RAM （GDRAM ）。
可与CPU 直接接口，提供两种界面来连接 微处理机：8-位并行及串行两种连接方式。
具有多种功能：光标显示、画 面移位、睡眠模式等。
1.1结构牢：带PCB、背光、铁框1.2 IC 采用矽创公司ST7920,功能强大，稳定性好1.3功耗低:10 - 100mW（不带背光10mW,带背光不大于100mW）; 1.4显示内容:●160*32点阵单色图片;●内置8192 个中文汉字（16X16 点阵）、128 个字符（8X16 点阵）及64X256点阵显示RAM （GDRAM ）.1.5指令功能强:可组合成各种输入、显示、移位方式以满足不同的要求;1.6接口简单方便:采用3线SPI 串行接口，可只需3位MPU 的端口。
也可选用8位并行接口。
1.7工作温度宽:-20℃ - 70℃;1.8可靠性高:寿命为50,000小时(25℃)。
3.外形尺寸及接口引脚功能图1.外形尺寸我司专注于液晶屏及液晶模块的研发、制造。
所生产LCM16032B型液晶模块由于使用2．LC M 16032B图像型点阵液晶模块的特性模块的接口引脚功能引脚 符 号 名 称 功 能1 VSS接地 0V2 VDD 电路电源 5V,或3.3V 可选3 V0 LCD V0电压输入 可以通过此脚对LCD 驱动电压进行调整4RS(CS*)寄存器选择信号(串行时为片选：CS)1. 并行接口时：1:数据寄存器 0:指令寄存器2. 串行接口时：片选信号，低电平有效5 R/W(SID*) 读写选择（串行时为串行数据：SID） 1.并行接口时：0: 写 1:读2.串行时为串行数据输入：SID 6E(SCLK*)读写使能信号（串行时为串行时钟：SCLK） 1. 并行接口时：读写使能信号 2. 串行时为串行时钟：SCLK 7~14 D0~D7数据DB0~DB7并行接口时：数据总线DB0~DB7 串行接口时：无效，空脚4位并行接口时，DB4~DB7作为数据总线，DB0~DB3不起作用15 PSB 并行/串行选择 1：选择并行，0：选择串行，也可在PCB 上与VDD(1)或VSS(0)连接达到选择并/串接口。
lcd1601手册
lcd1601手册摘要：一、LCD1601 概述1.LCD1601 的定义2.LCD1601 的应用领域二、LCD1601 的工作原理1.LCD 的基本原理2.LCD1601 的工作原理三、LCD1601 的特性与参数1.显示特性2.技术参数四、LCD1601 的驱动与控制1.驱动方式2.控制信号五、LCD1601 的接口与应用1.接口类型2.应用领域六、LCD1601 的选购与维护1.选购注意事项2.维护方法正文：LCD1601 是一种液晶显示屏，广泛应用于各种电子设备中，如家电、工业控制、医疗设备等。
本文将对LCD1601 的工作原理、特性、参数、驱动与控制、接口与应用以及选购与维护等方面进行详细介绍。
LCD1601 的工作原理是基于液晶分子的旋转来控制光的透过程度。
通过施加电压，可以改变液晶分子的排列方式，从而调节光的透过程度，达到显示的目的。
LCD1601 具有以下特性：1.低功耗2.高对比度3.宽视角4.响应速度快LCD1601 的主要技术参数包括：1.显示分辨率2.显示颜色3.显示尺寸4.工作电压5.工作温度在驱动与控制方面，LCD1601 通常采用串行接口进行驱动，通过控制信号来调整显示内容。
其中，驱动方式包括静态驱动和动态驱动，而控制信号主要包括时钟信号、数据信号和命令信号。
LCD1601 的接口类型有多种，如并行接口、串行接口、I2C 接口等。
在应用领域方面，LCD1601 广泛应用于各种电子设备，如手机、平板电脑、数码相机、汽车导航等。
在选购LCD1601 时，应注意以下几点：1.确认显示需求，如分辨率、显示颜色等；2.考虑工作环境，如温度、湿度等；3.选择合适的接口类型；4.了解售后服务。
在维护LCD1601 时，应注意以下几点：1.避免在高湿、高温环境下使用；2.避免强烈阳光直射；3.定期清洁屏幕；4.避免长时间显示同一画面。
综上所述，LCD1601 作为一种广泛应用的液晶显示屏，具有低功耗、高对比度等优点。
sit1042a参数手册
sit1042a参数手册《SIT1042A参数手册》是指针对SIT1042A型号的设备或产品所提供的详细参数信息手册。
SIT1042A可能是某种电子设备、仪器仪表、传感器等，下面我将从多个角度对其参数手册进行全面的回答。
首先，SIT1042A参数手册通常会包括以下几个方面的内容：1. 基本信息，参数手册的开头部分通常会列出SIT1042A的型号、生产厂家、产品描述等基本信息，以便用户快速了解该设备。
2. 电气参数，这部分会列出SIT1042A的电气特性，如电压范围、电流要求、功耗等。
这些参数对于用户在使用设备时的电源供应和电路设计都非常重要。
3. 机械参数，机械参数描述了SIT1042A的尺寸、重量、安装方式等信息，这对于用户在设备布局和安装过程中起到指导作用。
4. 性能参数，性能参数是评估设备性能的关键指标，包括测量范围、精度、分辨率、响应时间等。
这些参数可以帮助用户了解SIT1042A在特定应用场景下的表现。
5. 环境参数，环境参数描述了SIT1042A在使用过程中的工作环境要求，如温度范围、湿度要求、防护等级等。
这些参数对于设备的可靠性和稳定性至关重要。
6. 接口参数，如果SIT1042A具有外部接口，参数手册中通常会提供与其他设备或系统连接所需的接口类型、协议、速率等信息，以便用户进行集成和通信。
7. 安全与认证，这部分会列出SIT1042A的安全性能和相关的认证标准，如CE认证、防护等级等。
这些信息对于用户在选择和使用设备时的安全考虑至关重要。
此外，SIT1042A参数手册可能还包含设备的使用说明、维护保养指南、故障排除方法等内容，以帮助用户更好地操作和维护设备。
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SiT5356数据手册-晶圆电子SiTime硅晶振一级代理商
SiT53561 – 60 MHz, ±0.1 to ±0.25 ppm, Stratum 3, Elite Platform™ Precision Super-TCXODescriptionThe SiT5356 is a ±100 ppb precision MEMS Super-TCXO that is fully compliant to Telcordia GR-1244-CORE Stratum 3 oscillator specifications. Engineered for best dynamic performance, the SiT5356 is ideal for high reliability telecom, wireless and networking, industrial, precision GNSS and audio/video applications.L everaging SiTime’s unique DualMEMS™ temperature sensi ng and TurboCompensation™ technolog ies, the SiT5356 delivers the best dynamic performance for timing stability in the presence of environmental stressors due to air flow, temperature perturbation, vibration, shock, and electromagnetic interference. This device also integrates multiple on-chip regulators to filter power supply noise, eliminating the need for a dedicated external LDO.The SiT5356 offers three device configurations that can be ordered using Ordering Codes for:1)TCXO with non-pullable output frequency,2)VCTCXO allowing voltage control of outputfrequency, and3)DCTCXO, enabling digital control of output frequencyusing an I2C interface, pullable to 5 ppt (parts pertrillion) resolution.The SiT5356 can be factory programmed for any combination of frequency, stability, voltage, and pull range. Programmability enables designers to optimize clock configurations while eliminating long lead times and customization costs associated with quartz devices where each frequency is custom built.Refer to Manufacturing Guideline for proper reflow profile and PCB cleaning recommendations to ensure best performance. Features⏹Any frequency from 1 MHz to 60 MHz in 1 Hz steps ⏹Factory programmable options for low lead time⏹Best dynamic stability under airflow, thermal shock▪±100 ppb stability across temperature▪±1 ppb/ C typical frequency slope (ΔF/ΔT)▪3e-11 ADEV at 10 second averaging time⏹-40°C to +105°C operating temperature⏹No activity dips or micro jumps⏹Resistant to shock, vibration and board bending⏹On-chip regulators eliminate the need for external LDOs ⏹Digital frequency pulling (DCTCXO) via I2C▪Digital control of output frequency and pull range ▪Up to ±3200 ppm pull range▪Frequency pull resolution down to 5 ppt⏹ 2.5V, 2.8V, 3.0V and 3.3V supply voltage⏹LVCMOS or clipped sinewave output⏹RoHS and REACH compliant⏹Pb-free, Halogen-free, Antimony-free Applications⏹4G/5G radio, Small cell⏹IEEE1588 boundary and grandmaster clocks⏹Carrier-grade routers and switches⏹Synchronous Ethernet⏹Optical transport – SONET/SDH, OTN, Stratum 3⏹DOCSIS 3.x remote PHY⏹GPS disciplined oscillators⏹Precision GNSS systems⏹Test and measurementBlock DiagramFigure 1. SiT5356 Block Diagram 5.0 x 3.2 mm2 Package PinoutOE / VC / NC12345678910SCL / NCNCGNDNCNCVDDCLKA0 / NCSDA / NCFigure 2. Pin Assignments (Top view) (Refer to Table 13for Pin Descriptions)Ordering InformationThe following part number guide is for reference only. To customize and build an exact part number, use theSiTime Part Number Generator. To validate the part number, use the SiTime Part Number Decoder.Notes:1. “-“ corresponds to the default rise/fall time for LVCMOS output as specified in Table 1 (Electrical Characteristics). Contact SiTime for other rise/fall time optionsfor best EMI.2. Bulk is available for sampling onlyTABLE OF CONTENTSDescription (1)Features (1)Applications (1)Block Diagram (1)5.0 x 3.2 mm2 Package Pinout (1)Ordering Information (2)Electrical Characteristics (4)Device Configurations and Pin-outs (10)Pin-out Top Views (10)Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs (11)Waveforms (13)Timing Diagrams (14)Typical Performance Plots (15)Architecture Overview (19)Frequency Stability (19)Output Frequency and Format (19)Output Frequency Tuning (19)Pin 1 Configuration (OE, VC, or NC) (20)Device Configurations (20)TCXO Configuration (20)VCTCXO Configuration (21)DCTCXO Configuration (22)VCTCXO-Specific Design Considerations (23)Linearity (23)Control Voltage Bandwidth (23)FV Characteristic Slope K V (23)Pull Range, Absolute Pull Range (24)DCTCXO-Specific Design Considerations (25)Pull Range and Absolute Pull Range (25)Output Frequency (26)I2C Control Registers (28)Register Descriptions (28)Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) (28)Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW) (29)Register Address: 0x02. DIGITAL PULL RANGE CONTROL[14] (30)Serial Interface Configuration Description (31)Serial Signal Format (31)Parallel Signal Format (32)Parallel Data Format (32)I2C Timing Specification (34)I2C Device Address Modes (35)Schematic Example (36)Dimensions and Patterns (37)Layout Guidelines (38)Manufacturing Guidelines (38)Electrical CharacteristicsAll Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and 3.3V Vdd.Table 1. Output CharacteristicsTable 1. Output Characteristics (continued)Table 2. DC CharacteristicsTable 3. Input CharacteristicsNote:3. APR = PR – initial tolerance – 20-year aging – frequency stability over temperature. Refer to Table 17 for APR with respect to other pull range options.Table 5. Jitter & Phase Noise – Clipped Sinewave, -40 to 85 °CTable 7. Jitter & Phase Noise – Clipped Sinewave, -40 to 105 °CTable 8. Absolute Maximum LimitsAttempted operation outside the absolute maximum ratings may cause permanent damage to the part.Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.Note:4. Exceeding this temperature for an extended period of time may damage the device.Table 9. Thermal Considerations[5]Note:5. Measured in still air.Table 10. Maximum Operating Junction Temperature[6]Note:6. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.Table 11. Environmental ComplianceDevice Configurations and Pin-outsTable 12. Device ConfigurationsPin-out Top ViewsOE/NC12345678910NC NC GNDNC NC VDD CLKNCNCFigure 3. TCXOVC 12345678910NC NC GNDNC NC VDD CLKNCNCFigure 4. VCTCXOOE / NC 12345678910 SCL NC GNDNC NC VDD CLKA0 / NCSDAFigure 5. DCTCXOTable 13. Pin DescriptionNotes:7. In OE mode for noisy environments, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.8. A 0.1 μF capacitor in parallel with a 10 μF capacitor are required between Vdd and GND. The 0.1 μF capacitor is recommended to place close to the device, and place the 10 μF capacitor less than 2 inches away.9. All NC pins can be left floating and do not need to be soldered down.Test Circuit Diagrams for LVCMOS and Clipped Sinewave OutputsFigure 6. LVCMOS Test Circuit (OE Function)Figure 7. Clipped Sinewave Test Circuit (OE Function)for AC and DC MeasurementsVC FunctionFigure 8. LVCMOS Test Circuit (VC Function)VC FunctionFigure 9. Clipped Sinewave Test Circuit (VC Function)for AC and DC MeasurementsNC FunctionFigure 10. LVCMOS Test Circuit (NC Function)NC FunctionFigure 11. Clipped Sinewave Test Circuit (NC Function)for AC and DC MeasurementsTest Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs (continued)FunctionFigure 12. LVCMOS Test Circuit (I2C Control), DCTCXO modeFunction2C Control), DCTCXO mode for AC and DC MeasurementsFigure 13. Clipped Sinewave Test Circuit (IFigure 14. Clipped Sinewave Test Circuit for Phase Noise Measurements, Applies to All Configurations(NC Function shown for example only)Note:10.SDA is open-drain and may require pull-up resistor if not present in I2C test setup.Waveforms90 % Vdd 50 % Vdd10 % VddFigure 15. LVCMOS Waveform Diagram[11]Figure 16. Clipped Sinewave Waveform Diagram[11]Note:11.Duty Cycle is computed as Duty Cycle = TH/Period.Timing DiagramsVdd Pin CLK OutputT_start: Time to start from power-offFigure 17. Startup Timing T_oe: Time to re-enable the clock outputFigure 18. OE Enable Timing (OE Mode Only)Typical Performance PlotsFigure 19. ADEV (±0.1 ppm)Figure 20. TDEV (0.1 Hz loop bandwidth, ±0.1 ppm)Figure 21. MTIE (0.1 Hz loop bandwidth, ±0.1 ppm)Figure 22. Frequency vs Temperature (±0.1 ppm), 105°CFigure 23. Freq. vs. Temp. Slope (ΔF/ΔT), ±0.1 ppm deviceFigure 24. VCTCXO frequency pull characteristicFigure 25. 1-day aging rate (to 62 days), ±0.1 ppm deviceFigure 26. Drift over 30 days relative to the first readingTypical Performance Plots (continued)Figure 27. Load sensitivity (±0.1 ppm )Figure 28. VDD sensitivity (±0.1 ppm)Figure 31. IDD TCXO (LVCMOS)Figure 32. IDD VCTCXO (LVCMOS)Figure 33. T_phj, RMS Random, (DC)TCXO (LVCMOS)Figure 34. Period Jitter, RMS (LVCMOS)Figure 35. IDD DCTCXO (LVCMOS)Figure 36. T_phj, RMS Random, VCTCXO (LVCMOS)Figure 37. DCTCXO frequency pull characteristicFigure 38. Rise Time (Clipped Sinewave)Figure 39. IDD TCXO (Clipped Sinewave)Figure 40. IDD VCTCXO (Clipped Sinewave)Figure 41. T_phj, RMS Random, (DC)TCXO (Clipped Sine)Figure 42. IDD DCTCXO (Clipped Sinewave)Figure 43. T_phj, RMS Random, VCTCXO (Clipped Sine)Figure 44. Duty Cycle (Clipped Sinewave)Architecture OverviewBased on SiTime’s innovative Elite Platform™, the SiT5356 delivers exceptional dynamic performance, i.e. resilience to environmental stressors such as shock, vibration, and fast temperature transients. Underpinning the Elite platform are SiTime’s unique DualMEMS™temperature sensing architecture and TurboCompensation™ technologies. DualMEMS is a noiseless temperature compensation scheme. It consists of two MEMS resonators fabricated on the same die substrate. The TempFlat™resonator is designed with a flat frequency characteristic over temperature whereas the temperature sensing resonator is by design sensitive to temperature changes. The ratio of frequencies between these two resonators provides an accurate reading of the resonator temperature with 20 µK resolution.By placing the two MEMS resonators on the same die, this temperature sensing scheme eliminates any thermal lag and gradients between resonator and temperature sensor, thereby overcoming an inherent weakness of legacy quartz TCXOs.The DualMEMS temperature sensor drives a state-of-the-art CMOS temperature compensation circuit. The TurboCompensation design, with >100 Hz compensation bandwidth, achieves a dynamic frequency stability that is far superior to any quartz TCXO. The digital temperature compensation enables additional optimization of frequency stability and frequency slope over temperature within any chosen temperature range for a given system design.Figure 45. Elite ArchitectureThe Elite platform also incorporates a high resolution, low noise frequency synthesizer along with the industry standard I2C bus. This unique combination enables system designers to digitally control the output frequency in steps as low as 5 ppt and over a wide range up to ±3200 ppm. For more information regarding the Elite platform and its benefits please visit:⏹SiTime's breakthroughs section⏹TechPaper:DualMEMS Temperature Sensing Technology ⏹TechPaper:DualMEMS Resonator TDC Functional OverviewThe SiT5356 is designed for maximum flexibility with an array of factory programmable options, enabling system designers to configure this precision device for optimal performance in a given application.Frequency StabilityThe SiT5356 comes in two factory-trimmed stability grades that are optimized for different applications. Both Stratum 3+ and Stratum 3 devices are compliant with Stratum 3 stability of ±4.6 ppm over 20 years.Table 14. Stability Grades vs. Ordering Codes⏹Stratum 3+ grade with ΔF/ΔT of ±3.5 ppb/︒C isengineered to provide significantly better performancethan legacy quartz TCXOs in time and phasesynchronization applications such as IEEE1588, smallcells, and 5G C-RAN (cloud RAN).⏹Stratum 3 grade is designed to replace classicStratum 3 TCXOs in applications such as SyncE withbetter dynamic performance and shorter lead time. Output Frequency and FormatThe SiT5356 can be factory programmed for an outputfrequency without sacrificing lead time or incurring an upfront customization cost typically associated with custom-frequency quartz TCXOs.The device supports both LVCMOS and clipped sinewave output. Ordering codes for the output format are shown below: Table 15. Output Formats vs. Ordering CodesOutput Frequency TuningIn addition to the non-pullable TCXO, the SiT5356 can also support output frequency tuning through either an analog control voltage (VCTCXO), or I2C interface (DCTCXO). The I2C interface enables 16 factory programmed pull-range options from ±6.25 ppm to ±3200 ppm. The pull range can also be reprogrammed via I2C to any supported pull-range value.Refer to Device Configuration section for details.Pin 1 Configuration (OE, VC, or NC)Pin 1 of the SiT5356 can be factory programmed to support three modes: Output Enable (OE), Voltage Control (VC), or No Connect (NC).Table 16. Pin Configuration OptionsWhen pin 1 is configured as OE pin, the device output is guaranteed to operate in one of the following two states:⏹Clock output with the frequency specified in the partnumber when Pin 1 is pulled to logic high⏹Hi-Z mode with weak pull down when pin 1 is pulled tologic low.When pin 1 is configured as NC, the device is guaranteed to output the frequency specified in the part number at all times, regardless of the logic level on pin 1.In the VCTCXO configuration, the user can fine-tune the output frequency from the nominal frequency specified in the part number by varying the pin 1 voltage. The guaranteed allowable variation of the output frequency is specified as pull range. A VCTCXO part number must contain a valid pull-range ordering code. Device ConfigurationsThe SiT5356 supports 3 device configurations –TCXO,VCTCXO, and DCTCXO. The TCXO and VCTCXO options are directly compatible with the quartz TCXO and VCTCXO. The DCTCXO configuration provides performance enhancement by eliminating VCTCXO’s sensitivity to control voltage noise with an I2C digital interface for frequency tuning.Figure 46. Block Diagram – TCXOTCXO ConfigurationThe TCXO configuration generates a fixed frequency output, as shown in Figure 46. The frequency is specified by the user in the frequency field of the device ordering code and then factory programmed. Other factory programmable options include supply voltage, output types (LVCMOS or clipped sinewave), and pin 1 functionality (OE or NC).Refer to the Ordering Information section at the end of the datasheet for a list of all ordering options.A VCTCXO, shown in Figure 47, is a frequency control device whose output frequency is an approximately linear function of control voltage applied to the voltage control pin. VCTCXOs have a number of use cases including the VCO portion of a jitter attenuation/jitter cleaner PLL Loop.The SiT5356 achieves a 10x better pull range linearity of <0.5% via a high-resolution fractional PLL compared with 5% to 10% typical of quartz VCTCXOs that rely on pulling a resonator. By contrast, quartz-based VCTCXOs change output frequency by varying the capacitive load of a crystal resonator using varactor diodes, which results in poor linearity.Figure 47. Block Diagram – VCTCXO Note that the output frequency of the VCTCXO is proportional to the analog control voltage applied to pin 1. Because this control signal is analog and directly controls the output frequency, care must be taken to minimize noise on this pin.The nominal output frequency is factory programmed per the customer’s request to 6 digits of precision and is defined as the output frequency when the control voltage equals Vdd/2. The maximum output frequency variation from this nominal value is set by the pull range, which is also factory programmed to the customer’s desired value and specified by the ordering code. The Ordering Information section shows all ordering options and associated ordering codes. Refer to VCTCXO-Specific Design Considerations for more information on critical VCTCXO parameters including pull range linearity, absolute pull range,control voltage bandwidth, and Kv.The SiT5356 offers digital control of the output frequency, as shown in Figure 48. The output frequency is controlled by writing frequency control words over the I2C interface. There are several advantages of DCTCXOs relative to VCTCXOs:1)Frequency control resolution as low as 5 ppt. Thishigh resolution minimizes accumulated time error insynchronization applications.2)Lower system cost – A VCTCXO may need a Digital toAnalog Converter (DAC) to drive the control voltageinput. In a DCTXCO, the frequency control is achieveddigitally by register writes to the control registers viaI2C, thereby eliminating the need for a DAC.3)Better noise immunity –The analog signal used todrive the voltage control pin of a VCTCXO can besensitive to noise, and the trace over which the signalis routed can be susceptible to noise coupling from thesystem. The DCTCXO does not suffer from analognoise coupling since the frequency control isperformed digitally through I2C.Figure 48. Block Diagram4)No frequency-pull non-linearity – The frequency pullingis achieved via fractional feedback divider of the PLL, eliminating any pull non-linearity concerns typical of quartz-based VCTCXOs. This improves dynamic performance in closed-loop applications.5)Programmable wide pull range –The DCTCXOpulling mechanism is via the fractional feedback divider and is therefore not constrained by resonator pullability as in quartz-based solutions. The SiT5356 offers 16 frequency pull-range options from ±6.25ppm to ±3200ppm, providing system designers great flexibility.Refer to DCTCXO-Specific Design Considerations for more information on critical DCTCXO parameters including pull range, absolute pull range, frequency output, and I2Ccontrol registers.VCTCXO-Specific Design ConsiderationsLinearityIn any VCTCXO, there will be some deviation of the frequency-voltage (FV) characteristic from an ideal straight line. Linearity is the ratio of this maximum deviation to the total pull range, expressed as a percentage. Figure 49 below shows the typical pull linearity of a SiTime VCTCXO. The linearity is excellent (1% maximum) relative to most quartz offerings because the frequency pulling is achieved with a PLL rather than varactor diodes.Figure 49. Typical SiTime VCTCXO LinearityControl Voltage BandwidthControl voltage b andwidth, sometimes called “modulation r ate” or “modulation b andwidth”, indicates how fast a VCO can respond to voltage changes at its input. The ratio of the output frequency variation to the input voltage variation, previously denoted by K V, has a low-pass characteristic in most VCTCXOs. The control voltage bandwidth equals the modulating frequency where the output frequency deviation equals 0.707 (e.g. -3 dB) of its DC value, for DC inputs swept in the same voltage range.For example, a part with a ±6.25 ppm pull range and a 0-3V control voltage can be regarded as having an average KV of 4.17 ppm/V (12.5 ppm/3V = 4.17 ppm/V). Applying an input of 1.5V DC ± 0.5V (1.0 V to 2.0V) causes an output frequency change of 4.17 ppm (±2.08 ppm). If the control voltage bandwidth is specified as 10 kHz, the peak-to-peak value of the output frequency change will be reduced to 4.33 ppm/√2 or 2.95 ppm, as the frequency of the control voltage change is increased to 10 kHz.FV Characteristic Slope K VThe slope of the FV characteristic is a critical design parameter in many low bandwidth PLL applications. The slope is the derivative of the FV characteristic –the deviation of frequency divided by the control voltage change needed to produce that frequency deviation, over a small voltage span, as shown below:inoutV VfK∆∆=It is typically expressed in kHz/Volt, MHz/Volt, ppm/Volt, or similar units. This s lope is usually called “K V” based on terminology used in PLL designs.The extreme linear characteristic of the SiTime SiT5356 VCTCXO family means that there is very little K V variation across the whole input voltage range (typically <1%), significantly reducing the design burden on the PLL designer. Figure50below illustrates the typical K V variation.Figure 50. Typical SiTime K V VariationPull Range, Absolute Pull RangePull range (PR) is the amount of frequency deviation that will result from changing the control voltage over its maximum range under nominal conditions.Absolute pull range (APR) is the guaranteed controllable frequency range over all environmental and aging conditions. Effectively, it is the amount of pull range remaining after taking into account frequency stability, tolerances over variables such as temperature, power supply voltage, and aging, i.e.:agingstability F F PR APR --=where stability F is the device frequency stability due to initial tolerance and variations on temperature, power supply, and load.Figure 51 shows a typical SiTime VCTCXO FV characteristic. The FV characteristic varies with conditions, so that the frequency output at a given input voltage can vary by as much as the specified frequency stability of the VCTCXO. For such VCTCXOs, the frequency stability and APR are independent of each other. This allows very wide range of pull options without compromising frequency stability.Figure 51. Typical SiTime VCTCXO FV Characteristic The upper and lower control voltages are the specified limits of the input voltage range as shown in Figure 51 above. Applying voltages beyond the upper and lower voltages do not result in noticeable changes of output frequency. In other words, the FV characteristic of the VCTCXO saturates beyond these voltages. Figures 1 and 2 show these voltages as Lower Control Voltage (VC_L) and Upper Control Voltage (VC_U).Table 17 below shows the pull range and corresponding APR values for each of the frequency vs. temperature ordering options.Table 17. VCTCXO Pull Range, APR Options [12] Typical unless specified otherwise. Pull range (PR) is ±6.25 ppm.Notes:12.APR includes initial tolerance, frequency stability vs. temperature, and the corresponding 20-year aging.DCTCXO-Specific Design ConsiderationsPull Range and Absolute Pull RangePull range and absolute pull range are described in theprevious section. Table 18 below shows the pull range andcorresponding APR values for each of the frequency vs.temperature ordering options.Table 18. APR Options[13]Notes:13.APR includes initial tolerance, frequency stability vs. temperature, and the corresponding 20-year aging.Output FrequencyThe device powers up at the nominal operating frequency and pull range specified by the ordering code. After power-up both pull range and output frequency can be controlled via I2C writes to the respective control registers. The maximum output frequency change is constrained by the pull range limits.The pull range is specified by the value loaded in the digital pull-range control register. The 16 pull range choices are specified in the control register and range from ±6.25ppm to ±3200ppm.Table 19 below shows the frequency resolution versus pull range programmed valueTable 19. Frequency Resolution versus Pull RangeThe ppm frequency offset is specified by the 26 bit DCXO frequency control register in two’s complement format as described in the I2C Register Descriptions. The power up default value is 00000000000000000000000000b which sets the output frequency at its nominal value (0 ppm). To change the output frequency, a frequency control word is written to 0x00[15:0] (Least Significant Word) and 0x01[9:0] (Most Significant Word). The LSW value should be written first followed by the MSW value; the frequency change is initiated after the MSW value is written.Figure 52. Pull Range and Frequency Control WordFigure 52shows how the two’s complement signed value of the frequency control word sets the output frequency within the ppm pull range set by 0x02:[3:0]. This example shows use of the ±200 ppm pull range. Therefore, to set the desired output frequency, one just needs to calculate the fraction of full scale value ppm, con vert to two’s complement binary, and then write these values to the frequency control registers.The following formula generates the control word value: Control word value = RND((225-1) × ppm shift from nominal/pull range), where RND is the rounding function which rounds the number to the nearest whole number. Two examples follow, assuming a ±200 ppm pull range: Example 1:⏹Default Output Frequency = 19.2 MHz⏹Desired Output Frequency = 19.201728 MHz (+90 ppm) 225-1 corresponds to +200 ppm, and the fractional value required for +90 ppm can be calculated as follows.⏹90 ppm / 200 ppm × (225-1) = 15,099,493.95.Rounding to the nearest whole number yields 15,099,494 and converting to two’s complement gives a binary value of 111001100110011001100110, or E66666 in hex.Example 2:⏹Default Output Frequency = 10 MHz⏹Desired Output Frequency = 9.998 MHz (-50 ppm) Following the formula shown above,⏹(-50 ppm / 200 ppm) × (225-1) = -8,388,607.75. Rounding this to the nearest whole number results in-8,388,608.Converting this to two’s complement binary results in 11100000000000000000000000, or 3800000 in hex. To summarize, the procedure for calculating the frequency control word associated with a given ppm offset is as follows:1)Calculate the fraction of the half-pull range needed.For example, if the total pull range is set for ±100 ppmand a +20 ppm shift from the nominal frequency isneeded, this fraction is 20 ppm/100 ppm = 0.22)Multiply this fraction by the full-half scale word value,225-1 = 33,554,431, round to the nearest wholenumber, and convert the result to two’s complementbinary. Following the +20ppm example, this value is0.2 × 33,554,431 = 6,710,886.2 and rounded to6,710,886.3)Write the two’s complement binary value starting withthe Least Significant Word (LSW) 0x00[16:0],followed by the Most Significant Word (MSW),0x01[9:0]. If the user desires that the output remainsenabled while changing the frequency, a 1 must alsobe written to the OE control bit 0x01[10] if the devicehas software OE Control Enabled.It is important to note that the maximum Digital Control update rate is 38 kHz regardless of I2C bus speed.I2C Control RegistersThe SiT5356 enables control of frequency pull range, frequency pull value, and Output Enable via I2C writes to the control registers. Table 20 below shows the register map summary, and detailed register descriptions follow.Table 20. Register Map SummaryRegister DescriptionsRegister Address: 0x00. Digital Frequency Control Least Significant Word (LSW)。
SiT8002-SITIME规格书
Features•Operating temperature range:•Automotive, -40°C to +125°C•Mechanically robust:•Shock, 50 KG•Vibration, 70 G•Wide frequency range•1 MHz to 125 MHz•Low frequency tolerance•±100 ppm or ±200 ppm or ±500•Operating voltage•1.8V or 2.5 or 3.3 V•Small footprint•2.5 x 2.0 x 0.85 mm•3.2 x 2.5 x 0.85 mm•5.0 x 3.2 x 0.85 mm•7.0 x 5.0 x 0.85 mm•All packages are Pb-free and ROHs compliant (QFN SMD)•Ultra-reliable start up and greater immunity from interfer-ence•High drive option: 30pF load (contact factory)Benefits•No crystal or capacitors required•Eliminates crystal qualification time•50% + board saving space•Most cost effective than Quartz oscillators, Quartz crystals and Clock ICs.•completely quartz-freeApplications•Automotive•Industrial•Automation•Space•SatellitePin DescriptionPin Pin Description1ST/OE Standby/ Output Enable2GND Connect to Ground3OUT 1 to 125 MHz Programmed Clock output 4VDD Connect to 1.8V or 2.5V or 3.3V Pin1Pin #1 FunctionalityOEH or Open; specified frequency outputL: output is high impedanceSTH or Open; specified frequency outputL: output is low level (weak pull down) oscillation stopsDescriptionThe SiT8002AA oscillator family is composed of the world’s smallest, high-performance programmable oscillators. The SiT8002AA is suitable for use in clock generation for automotive, industrial, and space/Satellite applications.MEMS resonators are 1000x smaller by volume than quartz resonators and are built in high volume CMOS fabs instead of small custom manufacturing facilities. Due to their small size,massive lot sizes, and simpler manufacturing processes MEMS oscillators are inherently more reliable, have more consistent performance and are always in stock.The SiT8002AA, by eliminating the quartz crystals, has improved immunity to the environmental effects of vibration,shock, strain, and humidity.Absolute Maximum RatingsAttempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications not absolute maximum ratings.Notes:1.The2.5V device can operate from 2.25V to3.63V with higher output drive, however, the data sheet parameters cannot be guaranteed. Please contact factory for this option.2.The output driver strenght can be programmed to drive up to 30pF load. Please contact factory for this option.Ab solute Maximum TableParameterMin.Max.Unit Storage Temperature -65150°C VDD-0.5+3.65V Electrostatic Discharge6000V Theta JA ( with copper plane on VDD and GND)–75°C/W Theta JC (with PCB traces of 0.010 inch to all pins)–24°C/W Soldering Temperature (follow standard Pb free soldering guidelines)260°C Number of Program Writes1NA Program Retention over -40 to 125C, Process, VDD (0 to 3.6V)1,000+yearsOperating ConditionsParameterMin.Typ.Max.Unit Supply Voltages, VDD [1]2.973.3 3.63V 2.25 2.5 2.75V 1.71.8 1.9V Automotive OperatingTemperature -40-125°C Maximum Load Capacitance [2]--15pF VDD Ramp Time-200msEnvironmental ComplianceParameter Condition/Test MethodMechanical Shock MIL-STD-883F, Method 2002, 50 KG Mechanical Vibration MIL-STD-883F, Method 2007, 70 G Temperature Cycle JESD22, Method A104SolderabilityMIL-STD-883F, Method 2003Moisture Sensibility LevelMSL1@VDD = 3.3V ±10%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Voltage Output High IOH = -20 mA 70--%Vdd Voltage Output Low IOL = 20 mA --30%Vdd Input Voltage High Pin 170--%Vdd Input Voltage Low Pin 1 --30%Vdd Operating Current Output frequency = 65 MHz, 15 pF load--30mA Standby Current Output is weakly pulled down, ST = GND-3080uA Power Up Time Time from minimum power supply voltage-1250ms@VDD = 2.5V ±10%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Voltage Output High IOH = -15 mA 70--%Vdd Voltage Output Low IOL = 15 mA --30%Vdd Input Voltage High Pin 170--%Vdd Input Voltage Low Pin 1 --30%Vdd Operating Current Output frequency = 65 MHz, 15 pF load--30mA Standby Current Output is weakly pulled down, ST = GND-3080uA Power Up Time Time from minimum power supply voltage-1250ms@VDD = 1.8V ±5%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Voltage Output High IOH = -10 mA 70--%Vdd Voltage Output Low IOL = 10 mA --30%Vdd Input Voltage High Pin 170--%Vdd Input Voltage Low Pin 1 --30%Vdd Operating Current Output frequency = 65 MHz, 15 pF load--25mA Standby Current Output is weakly pulled down, ST = GND-3080uA Power Up Time Time from minimum power supply voltage-1250ms@VDD = 3.3V ±10%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Clock Output Frequency1-125MHzFrequency Tolerance Initial tolerance, operating temperature, ratedpower supply voltage change, load change,aging,shock and vibration -100-+100ppm -200-+200ppm -500-+500ppmClock Output Duty Cycle Output frequency= 1 MHz to 125 MHz45-55% Clock Output Rise Time15 pF Load, 20% to 80% VDD- 1.03ns Clock Output Fall Time15 pF Load, 80% to 20% VDD- 1.03ns Pk-pk Period Jitter Output frequency = 24 MHz-100125psOutput frequency = 100 MHz-6075ps @VDD = 2.5V ±10%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Clock Output Frequency1-125MHzFrequency Tolerance Initial tolerance, operating temperature, ratedpower supply voltage change, load change,aging,shock and vibration -100-+100ppm -200-+200ppm -500-+500ppmClock Output Duty Cycle Output frequency= 1MHz to 125MHz45-55% Clock Output Rise Time15 pF Load, 20% to 80% VDD- 1.03ns Clock Output Fall Time15 pF Load, 80% to 20% VDD- 1.03ns Pk-pk Period Jitter Output frequency = 24 MHz-130150psOutput frequency = 100 MHz-6075ps@VDD = 1.8V ±5%, -40 to 125°CParameter Condition Min.Typ.Max.Unit Clock Output Frequency1-125MHzFrequency Tolerance Initial tolerance, operating temperature, ratedpower supply voltage change, load change,aging,shock and vibration -50-+50ppm -100-+100ppmClock Output Duty Cycle Output frequency= 1 MHz to 65MHz45-55%Output frequency= 65 MHz to 125MHz40-60% Clock Output Rise Time15 pF Load, 20% to 80% VDD- 1.03ns Clock Output Fall Time15 pF Load, 80% to 20% VDD- 1.03ns Pk-pk Period Jitter Output frequency = 24 MHz-185225psOutput frequency = 100 MHz-100125psOrdering InformationPackage Information[3]Dimension (mm) Land Pattern (recommneded) (mm)2.5 x 2.0 x 0.85mmNote:3.xxxx top marking denotes manufacturing lot number..Package Information (continued)[3]Dimension (mm) Land Pattern (recommneded) (mm)3.2 x 2.5 x 0.85mm5.0 x 3.2 x 0.85mm7.0 x 5.0 x 0.85mma Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by sitme are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below.CRITICAL USE EXCLUSION POLICYBUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited.。
SiT9002数据手册-1–220MHz任意频率SiTime差分扩频晶振
Features•World’s first differential spread spectrum oscillator •Extremely low cycle-cycle jitter• As low as10 ps (typical)•Wide frequency range•1 MHz to 220 MHz•220 MHz to 800 MHz (contact SiTime)•Eight spread selections (31.5 KHz modulation rate)•Center Spread: ±0.25%, ±0.5%, ±1.0%, ±2.0%•Down Spread: -0.5%, -1.0%, -2.0%, -4.0%•For -0.25% and ±0.125% contact SiTime •Low frequency stability (Spread = OFF)•±25 ppm or ±50 ppm •Operating voltage•1.8V or 2.5 or 3.3 V •Operating temperature range:•Industrial, -40°C to 85°C•Extended Commercial, -20°C to 70°C •Small footprint•5.0 x 3.2 x 0.75 mm •7.0 x 5.0 x 0.90 mm •Pb-free and RoHS compliant•Ultra-reliable start up and greater immunity from inter-ferenceBenefits•Services most PC peripherals, networking, and consumer applications•Provides wide range of spread percentage for maximum electromagnetic interference (EMI) reduction•Up to -17 dB reduction on third homonic and -12dB on the fundamental•Fast time to market due to not needing to redesign the PCB for EMI reduction•Factory programmable for ultra-fast lead time •No crystal or load capacitors required •Eliminates crystal qualification time •50%+ board saving space •Completely quartz-freeApplications•PCI-Express •USB 3.0•Fully Buffered DIMM •Blade Server •Router •System Clock•Networking and Computing •Automotive •IndustrialBlock Diagram PinoutPin DescriptionPin Pin Description1 ST/OE/SD Input Standby or Output Enable pin for OUT+ and OUT-.OE:When High or Open : OUT+ and OUT- = activeWhen Low : OUT+ and OUT- = High Impedance stateST:When High or Open : OUT+ and OUT- = activeWhen Low : OUT+ and OUT- = Output is low (weak pull down), oscillation stopsSD: Spread Disable - disables spread spectrumWhen High or Open : Spread Spectrum modulation = activeWhen Low : Spread Spectrum modulation = Off2 NC NA No connect pin, leave it floating.3 GND Power VDD power supply ground. Connect to ground4 OUT+ Output 1 to 220 MHz programmable clock output. For frequencies > 220 MHz contact SiTime5 OUT- Output6 VDD Power Power supplyAbsolute Maximum RatingsAttempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not absolute maximum ratings.Ab solute Maximum TableParameter Min.Max.Unit Storage Temperature -65150 °C VDD -0.5 4 VVin GND - 0.5 VDD + 0.5 VTheta JA ( with copper plane on VDD and GND) 5.0 x 3.2 package 7.0 x 5.0 package when center pad is soldered down7.0 x 5.0 package when center pad is not soldered down – 68 °C/W – 38 °C/W – 90 °C/WTheta JC (with PCB traces of 0.010 inch to all pins) 5.0 x 3.2 package 7.0 x 5.0 package when center pad is soldered down7.0 x 5.0 package when center pad is not soldered down – 45 °C/W – 35 °C/W – 48 °C/WSoldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Number of Program Writes – 1 NA Program Retention over -40 to 125C, Process, VDD (0 to 3.6V) – 1,000+ years Human Body Model (JESD22-A114) 2000 – V Charged Device Model (JESD22-C101) 750 – – Machine Model (JESD22-A115) 200 – –DC Electrical SpecificationsEnvironmental ComplianceParameter Condition/T est MethodMechanical Shock MIL-STD-883F, Method 2002Mechanical Vibration MIL-STD-883F, Method 2007T emperature Cycle MIL-STD-883F, Method 1010-65-150°C (1000 cycle)Solderability MIL-STD-883F, Method 2003Moisture Sensitivity Level MSL1 @ 260°CL VCMOS input, OE or ST pin, 3.3V ± 10% or 2.5V ± 10% or 1.8V ± 5%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit V IH Input High Voltage 70 – – %Vdd V IL Input Low Voltage – – 30 %Vdd I IH Input High Current OE or ST or SD pin – – 10 uA I IL Input Low Current OE or ST or SD pin -10– – uA T pu Power Up Time Time from minimum power supply voltage to thefirst cycle (Guaranteed no runt pulses)– – 10 ms LVPECL, 3.3V ± 10% or 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit V DD Supply Voltage 2.97 3.3 3.63 V2.25 2.5 2.75 VI DD Supply Current V DD = 3.3, Excluding Load Termination Current – 75 84 mAV DD = 2.5, Excluding Load Termination Current – 75 84 mAV OH Output High Voltage 50 Ohm termination to V DD - 2.0VSee Figure 2,3. V DD-1.1 – V DD-0.7 VV OL Output Low Voltage V DD-2.0 – V DD-1.4 V V swing Pk-Pk Output Voltage Swing 600 800 1000 mVHCSL, 3.3V ±10% or 2.5V ±10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit V DD Supply Voltage 2.97 3.3 3.63 V2.25 2.5 2.75 VI DD Supply Current V DD = 3.3, Excluding Load Termination Current – 73 80 mAV DD = 2.5, Excluding Load Termination Current – 73 80 mAV OH Output High Voltage 50 Ohm termination to GNDSee Figure 4. 0.6 0.75 0.95 VV OL Output Low Voltage 0.0 – 50 mV V swing Pk-Pk Output Voltage Swing 600 750 950 mV LVDS, 3.3V ± 10% or 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit V DD Supply Voltage 2.97 3.3 3.63 V2.25 2.5 2.75 VI DD Supply Current V DD = 3.3, Excluding Load Termination Current – 75 85 mAV DD = 2.5, Excluding Load Termination Current – 70 77 mAV OD1 Differential Output Voltage Swing Mode = NormalSingle load termination.See Figure 5. 250 350 450 mV∆V OD1 VOD Magnitude Change – – 50 mV V OS1 Offset Voltage – 1.2 – V ∆V OS1 VOS Magnitude Change – – 50 mVV OD2 Differential Output Voltage Swing Mode = HighSingle load termination.See Figure 5. 500 700 900 mV∆V OD2 VOD Magnitude Change – – 50 mV V OS2 Offset Voltage – 1.2 – V ∆V OS2 VOS Magnitude Change – – 50 mVV OD3 Differential Output Voltage Swing Mode = HighDouble load termination.See Figure 6. 250 350 450 mV∆V OD3 VOD Magnitude Change – – 50 mV V OS3 Offset Voltage – 1.2 – V ∆V OS3 VOS Magnitude Change – – 50 mVCML, 3.3V ± 10% or 2.5V ± 10% or 1.8V ± 5%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit V DD Supply Voltage 2.97 3.3 3.63 V2.25 2.5 2.75 V1.71 1.8 1.89 VI DD Supply Current V DD = 3.3V Excluding LoadTerminationCurrent – 48 51 mAV DD = 2.5V – 48 51 mA V DD = 1.8V – 48 51 mAV OH1 Output High Voltage Swing Mode = NormalSingle Load TerminationSee Figure 7. V DD-0.1 – V DD VV OL1Output Low Voltage V DD-0.55 V DD-0.425 V DD-0.3 V V swing1 Pk-Pk Output Voltage Swing 300 425 550 mVV OH2 Output High Voltage Swing Mode = HighSingle Load TerminationSee Figure 7. V DD-0.1 – V DD VV OL2Output Low Voltage V DD-1.1 V DD-0.85 V DD-0.6 V V swing2 Pk-Pk Output Voltage Swing 600 850 1100 mVV OH3 Output High Voltage Swing Mode = HighDouble Load TerminationSee Figure 8. V DD-0.1 – V DD VV OL3Output Low Voltage V DD-0.55 V DD-0.425 V DD-0.3 V V swing3 Pk-Pk Output Voltage Swing 300 425 550 mVAC Electrical SpecificationsLVPECL, 3.3V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 100 150 300 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 10 16 psF out = 150 MHz, -0.5% down spread – 8 14 psF out = 200 MHz, -0.5% down spread – 8 14 psLVPECL, 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 100 150 300 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 10 16 psF out = 150 MHz, -0.5% down spread – 8 14 psF out = 200 MHz, -0.5% down spread – 8 14 psHCSL, 3.3V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 200 280 375 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 10 16 psF out = 150 MHz, -0.5% down spread – 10 15 psF out = 200 MHz, -0.5% down spread – 10 15 psHCSL, 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 200 300 400 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 9 19 psF out = 150 MHz, -0.5% down spread – 9 17 psF out = 200 MHz, -0.5% down spread – 9 15 psLVDS, 3.3V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 100 200 325 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 11 19 psF out = 150 MHz, -0.5% down spread – 11 20 psF out = 200 MHz, -0.5% down spread – 11 21 psL VDS, 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 100 260 325 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 14 26 psF out = 150 MHz, -0.5% down spread – 14 26 psF out = 200 MHz, -0.5% down spread – 14 27 psCML, 3.3V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 150 220 300 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 11 20 psF out = 150 MHz, -0.5% down spread – 11 18 psF out = 200 MHz, -0.5% down spread – 10 19 psCML, 2.5V ± 10%, -40 to 85°CSymbol Parameter Condition Min.Typ.Max.Unit F out Output Frequency 1.0 – 220 MHzF stab Frequency Stability Inclusive of initial stability,operating temp., rated powersupply voltage change, loadchange -20 to 70°C-25– +25ppm -40 to 85°C-50– +50ppmF age Aging First year @ 25°C – – 1 PPM DC Duty Cycle 45 – 55 % t R/t F Output Rise/Fall Time 20% to 80% 150 230 300 ps T CCJ Cycle-Cycle Jitter F out = 100 MHz, -0.5% down spread – 13 22 psF out = 150 MHz, -0.5% down spread – 12 19 psF out = 200 MHz, -0.5% down spread – 11 20 psCML, 1.8V ± 5%, -40 to 85°CSymbol ParameterConditionMin. Typ. Max. Unit F out Output Frequency 1.0 – 220 MHz F stabFrequency StabilityInclusive of initial stability, operating temp., rated power supply voltage change, load change-20 to 70°C -25– +25ppm -40 to 85°C-50– +50ppm F age Aging First year @ 25°C – – 1 PPM DC Duty Cycle45 – 55 % t R /t F Output Rise/Fall Time 20% to 80%150 230 300 ps T CCJCycle-Cycle JitterF out = 100 MHz, -0.5% down spread – 13 23 ps F out = 150 MHz, -0.5% down spread – 12 22 ps F out = 200 MHz, -0.5% down spread–1221psTermination DiagramsFigure 1. LVPECL AC Coupled Typical TerminationFigure 2. LVPECL DC Coupled Typical Termination with Termination VoltageVDD = 3.3VR1 = 150 OhmVDD = 2.5VR1 = 120 OhmFigure 3. LVPECL DC Coupled Typical Termination without Termination VoltageFigure 4. HCSL Typical TerminationNote:1. All the tests are done with RS = 20 Ohm (recommended).Figure 5. LVDS Single Load Termination (Load Terminated)VDD = 3.3VR1 = R3 = 133 Ohm R2 = R4 = 82 OhmVDD = 2.5VR1 = R3 = 250 Ohm R2 = R4 = 62.5 OhmFigure 6. LVDS Double Termination (Source + Load Terminated)Figure 7. CML Single Load TerminationFigure 8. CML Double Load TerminationRev . 1.1 Page 11 of 12 Ordering InformationThe Part No. Guide is for reference only. For real-time customization and exact part number, use the SiTime Part Number Generator .Frequency Stability vs. Temperature Range OptionsSignaling Type vs. Swing Select OptionsNote:1.Without Center Pad.Signaling T ype Swing Select Supply Voltage1.8 V2.5 V3.3 VLVPECL-0Normal –High – ––LVPECL-1Normal –High – ––LVDSNormal – High –CMLNormal HighHCSLNormal –High–––Frequency Stability (PPM)T emperature Range Supply Voltage 1.8 V2.5 V3.3 V±25 C (-20 to +70°C) I (-40 to +85°C) ±50C (-20 to +70°C)I (-40 to +85°C)www.sitime china .comPackage Information [2]Dimension (mm) Land Pattern[3] (recommended) (mm)5.0 x 3.2 x 0.75mm7.0 x 5.0 x 0.90mmNotes:2. Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.3. A capacitor of value 0.1µF between VDD and GND is recommended.4. The 7050 package with part number designation "-8" has NO center pad.© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any sitime product and any product documentation. products sold by sitme are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. all sales are made conditioned upon compliance with the critical uses policy set forth below.CRITICAL USE EXCLUSION POLICYBUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited.Rev. 1.11 Page 12 of 12 www.sitime 。
基于单片机的数字时钟设计与制作
摘要：本系统以AT89S52为核心，选用DS1302串行时钟芯片，RT1602液晶显示器实现液晶显示当前日期、时间、星期。
本电子钟具有日期、时、分、秒的显示、调整功能，采用的时间制式为24小时制，时间显示格式为时（十位、个位）、分（十位、个位）、秒（十位、个位）。
关键词AT89S52、显示时间、调整时间、目录一、设计任务及要求 (2)1．1设计任务 (2)1．2设计要求 (2)二、设计方案 (2)2．1时钟实现 (2)2．2显示模块 (2)2．3微控制器模块 (2)三、设计原理及实现 (2)3．1系统的总体设计方案 (2)3.1.1系统的硬件电路设计与主要参数计算 (3)3.2系统的软件设计 (7)3.2.1主程序流程 (7)3.2.2 ds1302子程序流程 (7)3.2.3调整时间子程序流程 (8)四、测试 (8)4．1硬件测试 (8)4．2软件测试 (8)4．3功能测试 (11)五、设计结论及体会 (11)设计结论： (11)体会 (11)致谢 (12)参考文献 (13)一、设计任务及要求1．1设计任务设计并制作一个用单片机控制的数字时钟。
1．2设计要求（1）显示时间——显示时，分，秒。
（2）设置时间——利用键盘手动设置时间。
（3）自动计时——自动计时并能实时显示二、设计方案根据期末单片机设计任务的总体要求，本系统可以划分为以下个基本模块，针对各个模块的功能要求，分别有以下的设计方案：2．1时钟实现采用专用的时钟芯片实现时钟的记时，专用时钟芯片记时准确，容易控制，能够从芯片直接读出日期、时间、星期。
2．2显示模块采用液晶显示器件，液晶显示平稳、省电、美观，更容易实现题目要求，对后续的功能兼容性高，只需将软件作修改即可，可操作性强，也易于读数，采用RT1602两行十六个字符的显示，能同时显示日期、时间、星期。
2．3微控制器模块采用AT89S52八位单片机实现。
它内存较大，有8K的字节FLASH闪速存储器，比AT89C51要多4K。
罗德·斯坦斯 EMI 测试接收器规格说明书
T e s t & M e a s u r e m e n tD a t a S h e e t | 03.00R&S®ESCI/ESCI7 EMI Test Receiver Specifications 800-404-ATEC (2832)e d 1981Version 03.00, June 20092 Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test ReceiverSpecificationsSpecifications apply under the following conditions: 15 minutes warm-up time at ambient temperature, specified environmentalconditions met, calibration cycle adhered to, and all internal automatic adjustments performed. Data without tolerances: typical values only. Data designated 'nominal' applies to design parameters and is not assured by Rohde & Schwarz.FrequencyR&S ®ESCIDC, AC coupled 9 kHz to 3 GHz R&S ®ESCI7 DC coupled 9 kHz to 7 GHz Frequency rangeAC coupled 1 MHz to 7 GHzResolution0.01 Hz Internal reference frequency (nominal) standardAging per year after 30 days of continuous operation 1 × 10–6Temperature drift +5 °C to +45 °C 1 × 10–6Internal reference frequency (nominal) R&S ®FSP-B4 option (OCXO)Aging per year after 30 days of continuous operation 1 × 10–7Temperature drift +5 °C to +45 °C 1 × 10–8External reference frequency 10 MHz Frequency display (receiver mode) numeric display Resolution 0.1 Hz Frequency display (analyzer mode)with marker or frequency counter Marker resolution span/500 Max. deviation sweep time > 3 × auto sweep time ±(marker frequency × reference frequencyerror + 0.5 % × span + 10 % × resolution bandwidth + ½ (last digit))Frequency counter resolution selectable 0.1 Hz to 10 kHz Count accuracy S/N > 25 dB ± (marker frequency × referencefrequency error + ½ (last digit))Display range of frequency axis R&S ®ESCI 0 Hz, 10 Hz to 3 GHzR&S ®ESCI7 0 Hz, 10 Hz to 7 GHz Max. deviation of display range 0.1 % f = 500 MHz, for f > 500 MHz see diagram100 Hz < –84 dBc (1 Hz), typ. –90 dBc (1 Hz) 1 kHz < –100 dBc (1 Hz), typ. –108 dBc (1 Hz) 10 kHz < –106 dBc (1 Hz), typ. –113 dBc (1 Hz) 100 kHz, span > 100 kHz < –110 dBc (1 Hz), typ. –113 dBc (1 Hz) 1 MHz, span > 100 kHz < –120 dBc (1 Hz), typ. –125 dBc (1 Hz) Spectral purity, SSB phase noise 10 MHz typ. –145 dBc (1 Hz)Residual FM f = 500 MHz, RBW = 1 kHz, sweep time = 100 mstyp. 3 HzVersion 03.00, June 2009Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test Receiver 3Scan (receiver mode)Scanscan of max. 10 subranges with different, independent settings Measurement time per frequencyselectable33 μs to 100 sSweep (analyzer mode)in time domain, span = 0 Hz 1 μs to 16000 sresolution 125 ns Sweep timein frequency domain, span ≥ 10 Hz 2.5 ms to 16000 s Max. deviation of sweep time1 %Resolution bandwidthsSweep filters3 dB bandwidths10 Hz to 3 MHz, in steps of 1/3/10 ≤ 100 kHz< 3 % Bandwidth accuracy 300 kHz to 3 MHz < 10 % ≤ 100 kHz< 5 Shape factor 60 dB:3 dB 300 kHz to 3 MHz < 156 dB bandwidths 200 Hz, 9 kHz, 120 kHz EMI bandwidths pulse bandwidth 1 MHz ≤ 120 kHz < 3 % Bandwidth accuracy 1 MHz < 10 % ≤ 120 kHz < 5 Shape factor 60 dB:6 dB 1 MHz< 15Video bandwidths analyzer mode1 Hz to 10 MHz, in steps of 1/3/10FFT filtersanalyzer mode 3 dB bandwidths 1 Hz to 30 kHz, in steps of 1/3/10 Bandwidth accuracy 5 %, nominal Shape factor 60 dB:3 dB2.5, nominalChannel filtersBandwidths100/200/300/500 Hz; 1/1.5/2/2.4/2.7/3/3.4/4/4.5/5/6/8.5/9/10/ 12.5/14/15/16/18 (RRC)/20/21/24.3 (RRC)/ 25/30/50/100/150/192/200/300/500 kHz 1/1.228/1.28 (RRC)/1.5/2/3/3.84 (RRC)/ 4.096 (RRC)/ 5 MHz(RRC = root raised cosine)PreselectionPreselectioncan be switched off in analyzer mode R&S ®ESCI: 11 preselection filtersR&S ®ESCI7: 12 preselection filters Bandwidths (–6 dB), nominal R&S ®ESCI, R&S ®ESCI7 < 150 kHz230 kHz, fixed-tuned lowpass filter 150 kHz to 2 MHz 2.6 MHz, fixed-tuned bandpass filter 2 MHz to 8 MHz 2 MHz, tracking bandpass filter 8 MHz to 30 MHz 6 MHz, tracking bandpass filter 30 MHz to 70 MHz 15 MHz, tracking bandpass filter 70 MHz to 150 MHz 30 MHz, tracking bandpass filter 150 MHz to 300 MHz 60 MHz, tracking bandpass filter 300 MHz to 600 MHz 80 MHz, tracking bandpass filter 600 MHz to 1 GHz 100 MHz, tracking bandpass filter 1 GHz to 2 GHz tracking highpass filter2 GHz to3 GHz fixed-tuned highpass filter R&S ®ESCI73 GHz to 7 GHztracking bandpass filter Preamplifier switchable, between preselection and 1st mixer20 dBVersion 03.00, June 20094 Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test ReceiverLevelDisplay rangedisplayed average noise level (DANL) to 30 dBmMaximum input level DC-coupled 0 V DC voltage AC-coupled 50 V RF attenuation 0 dB 20 dBm CW RF power RF attenuation ≥ 10 dB 30 dBm Pulse spectral density RF attenuation 0 dB 97 dB μV/MHz Max. pulse voltage RF attenuation ≥ 10 dB, 10 μs 150 VR&S ®ESCIRF attenuation ≥ 10 dB, 20 μs 10 mWs R&S ®ESCI7Max. pulse energyRF attenuation ≥ 10 dB, 10 μs 1 mWs Intermodulation1 dB compression of input mixer f > 200 MHz, RF attenuation 0 dB, preselection and preamplifier off5 dBm, nominal RF attenuation 0 dB, level 2 × –30 dBm, ∆f > 5 × RBW or 10 kHz, whichever is larger without preselection, without preamplifierR&S ®ESCI, R&S ®ESCI7 20 MHz to 200 MHz > 5 dBm 200 MHz to 3 GHz > 7 dBm, typ. 10 dBm R&S ®ESCI73 GHz to 7 GHz > 10 dBm, typ. 15 dBm with preselection, without preamplifierR&S ®ESCI, R&S ®ESCI7 20 MHz to 200 MHz > 0 dBm 200 MHz to 3 GHz > 2 dBm, typ. 5 dBm R&S ®ESCI73 GHz to 7 GHz > 10 dBm, typ. 15 dBm with preselection, with preamplifierR&S ®ESCI, R&S ®ESCI7 20 MHz to 200 MHz > –20 dBm 200 MHz to 3 GHz > –18 dBm, typ. –15 dBm R&S ®ESCI7Third-order intercept (TOI)3 GHz to 7 GHz > –10 dBm, typ. –5 dBmRF attenuation 0 dB, level –10 dBm, without preselection, without preamplifierR&S ®ESCI, R&S ®ESCI7 < 100 MHz typ. 25 dBm 100 MHz to 1.5 GHz typ. 35 dBm R&S ®ESCI71.5 GHz to 3.5 GHz typ. 70 dBmRF attenuation 0 dB, level –15 dBm, with preselection, without preamplifierR&S ®ESCI, R&S ®ESCI7 4 MHz to 100 MHz > 40 dBm 100 MHz to 1.5 GHz > 50 dBm R&S ®ESCI71.5 GHz to 3.5 GHz typ. 70 dBmRF attenuation 0 dB, level –35 dBm, with preselection, with preamplifierR&S ®ESCI, R&S ®ESCI7 4 MHz to 100 MHz > 25 dBm 100 MHz to 1.5 GHz > 35 dBm R&S ®ESCI7Second harmonic intercept (SHI)1.5 GHz to 3.5 GHz typ. 10 dBmVersion 03.00, June 2009Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test Receiver 5RF attenuation 0 dB, RBW = 10 Hz,VBW = 1 Hz, span = 0 Hz, trace average function over 20 sweeps, 50 Ω termination without preselection, without preamplifier, AC-coupledR&S ®ESCI 9 kHz < –105 dBm, nominal 100 kHz < –110 dBm, nominal 1 MHz < –130 dBm, nominal 10 MHz to 1 GHz < –142 dBm, typ. –145 dBm 1 GHz to 2.5 GHz < –140 dBm, typ. –143 dBm 2.5 GHz to 3 GHz < –138 dBm, typ. –141 dBm R&S ®ESCI7 1 MHz < –128 dBm, nominal 10 MHz to 1 GHz < –140 dBm, typ. –143 dBm 1 GHz to 2.5 GHz < –138 dBm, typ. –141 dBm 2.5 GHz to 3 GHz < –136 dBm, typ. –139 dBm 3 GHz to 7 GHz < –138 dBm, typ. –141 dBm without preselection, without preamplifier, DC-coupledR&S ®ESCI 9 kHz < –115 dBm 100 kHz < –120 dBm 1 MHz < –140 dBm, typ. –143 dBm 10 MHz to 1 GHz < –142 dBm, typ. –145 dBm 1 GHz to 2.5 GHz < –140 dBm, typ. –143 dBm 2.5 GHz to 3 GHz < –138 dBm, typ. –141 dBm R&S ®ESCI7 9 kHz < –115 dBm 100 kHz < –120 dBm 1 MHz < –138 dBm, typ. –141 dBm 10 MHz to 1 GHz < –140 dBm, typ. –143 dBm 1 GHz to 2.5 GHz < –138 dBm, typ. –141 dBm 2.5 GHz to 3 GHz < –136 dBm, typ. –139 dBm 3 GHz to 7 GHz < –138 dBm, typ. –141 dBm with preselection, without preamplifier, DC-coupledR&S ®ESCI 9 kHz < –115 dBm 100 kHz < –120 dBm, typ. –140 dBm 1 MHz < –140 dBm, typ. –148 dBm 10 MHz to 1 GHz < –142 dBm, typ. –150 dBm 1 GHz to 2.5 GHz < –140 dBm, typ. –148 dBm 2.5 GHz to 3 GHz < –138 dBm, typ. –141 dBm R&S ®ESCI7 9 kHz < –115 dBm 100 kHz < –120 dBm, typ. –140 dBm 1 MHz < –138 dBm, typ. –146 dBm 10 MHz to 1 GHz < –140 dBm, typ. –148 dBm 1 GHz to 2.5 GHz < –138 dBm, typ. –146 dBm 2.5 GHz to 3 GHz < –136 dBm, typ. –139 dBm 3 GHz to 7 GHz < –138 dBm, typ. –141 dBm with preselection, with preamplifier, DC-coupledR&S ®ESCI 9 kHz < –135 dBm 100 kHz < –140 dBm 1 MHz < –150 dBm, typ. –153 dBm 10 MHz to 1 GHz < –152 dBm, typ. –155 dBm Displayed average noise level (DANL) (analyzer mode)1 GHz to 3 GHz < –150 dBm, typ. –153 dBm R&S ®ESCI7 9 kHz < –135 dBm 100 kHz < –140 dBm 1 MHz < –148 dBm, typ. –151 dBm 10 MHz to 1 GHz < –150 dBm, typ. –153 dBm1 GHz to 7 GHz < –148 dBm, typ. –151 dBmVersion 03.00, June 2009 6 Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test ReceiverNoise indication (receiver mode) Nominal, calculated from DANL data, 0 dB RF attenuation, 50 Ω termination without preamplifierR&S ®ESCI, R&S ®ESCI7 9 kHz, BW = 200 Hz < 5 dB μV 150 kHz, BW = 200 Hz < 0 dB μV 150 kHz, BW = 9 kHz < 16 dB μV 1 MHz, BW = 9 kHz < –4 dB μV 10 MHz to 30 MHz, BW = 9 kHz < –6 dB μV 30 MHz to 1 GHz, BW = 120 kHz < 6 dB μV 1 GHz to 3 GHz, BW = 1 MHz < 16 dB μV R&S ®ESCI73 GHz to 7 GHz, BW = 1 MHz < 20 dB μV with preamplifierR&S ®ESCI, R&S ®ESCI7 9 kHz, BW = 200 Hz < –15 dB μV 150 kHz, BW = 200 Hz < –20 dB μV 150 kHz, BW = 9 kHz < –4 dB μV 1 MHz, BW = 9 kHz < –14 dB μV 10 MHz to 30 MHz, BW = 9 kHz < –16 dB μV 30 MHz to 1 GHz, BW = 120 kHz < –4 dB μV 1 GHz to 3 GHz, BW = 1 MHz < 6 dB μV R&S ®ESCI7Average (AV) display3 GHz to 7 GHz, BW = 1 MHz < 3 dB μV max peak typ. +11 dB RMS typ. +1 dB quasi-peak band A typ. +3 dB band B typ. +4 dB Increase of DANL relative to AV displaybands C and D typ. +6 dB Immunity to interference Image frequency> 70 dB Intermediate frequency> 70 dB Spurious response f > 1 MHz, 0 dB RF attenuation, without input signal< –103 dBmOther interfering signals ∆f > 100 kHz, mixer level < –10 dBm< –70 dBcRF shielding field strength 3 V/m, 0 dB RF attenuation, 50 Ω termination, f ≠ f IFlevel indication < 10 dB μV, nominalLevel display (receiver mode) digital numeric, resolution 0.01 dB Level displayanalog bargraph display separate for eachdetectorlevel axis 10 dB to 200 dB in steps of 10 dB Spectrum frequency axis linear or logarithmic selectable DetectorsThree detectors can be switched on simultaneously. average (AV), RMS, max peak, min peak, quasi-peak (QPK), CISPR-AV, CISPR-RMS Units of level display dB μV, dBm, dB μA, dBpW, dBpT Measurement timeselectable 33 μs to 100 s Level display (analyzer mode) Screen501 × 400 pixels(one measurement diagram); max. two measurement diagrams with independent settingsLogarithmic level display range 1 dB, 10 dB to 200 dB in steps of 10 dB Linear level display range10 % of reference level per level division, 10 divisions one measurement diagram 3 Number of traces two measurement diagrams 6Trace detectorsmax peak, min peak, auto peak, sample, quasi-peak, average, RMSTrace functionsclear/write, max hold, min hold, average default value 501Number of measurement pointsrange125 to 8001 in steps of approx. a factor of 2Version 03.00, June 2009Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test Receiver 7logarithmic level display –130 dBm to 30 dBm in steps of 0.1 dB Setting range of reference level linear level display70.71 nV to 7.07 V in steps of 1 % logarithmic level display dBm, dBmV, dB μV, dB μA, dBpW Units of level axislinear level displaymV, μV, mA, μA, nW, pWMax. uncertainty of level measurement level = –30 dBm, RF attenuation 10 dB, RBW 10 kHz, reference level –25 dBm without preselection/preamplifier <0.2 dB (σ = 0.07 dB) Reference level uncertainty at 128 MHzwith preselection/preamplifier <0.3 dB (σ = 0.1 dB) without preselection/preamplifier, AC-coupledR&S ®ESCI9 kHz to 50 kHz < +0.5 dB/–1 dB, nominal 50 kHz to 3 GHz < 0.5 dB (σ = 0.17 dB) R&S ®ESCI71 MHz to 3 GHz < 0.5 dB (σ = 0.17 dB) 3 GHz to 7 GHz <2 dB (σ = 0.7 dB) without preselection/preamplifier, DC-coupledR&S ®ESCI9 kHz to 3 GHz < 0.5 dB (σ = 0.17 dB) R&S ®ESCI79 kHz to 3 GHz < 0.5 dB (σ = 0.17 dB) 3 GHz to 7 GHz < 2 dB (σ = 0.7 dB) with preselection/preamplifier, AC-coupledR&S ®ESCI9 kHz to 50 kHz < +0.8 dB/–1.3 dB, nominal 50 kHz to 3 GHz < 0.8 dB (σ = 0.27 dB) R&S ®ESCI71 MHz to 3 GHz < 0.8 dB (σ = 0.27 dB) 3 GHz to 7 GHz <2 dB (σ = 0.7 dB) with preselection/preamplifier, DC-coupledR&S ®ESCI9 kHz to 3 GHz < 0.8 dB (σ = 0.27 dB) R&S ®ESCI79 kHz to 3 GHz < 0.8 dB (σ = 0.27 dB) Frequency response referenced to 128 MHz3 GHz to 7 GHz < 2 dB (σ = 0.7 dB)Uncertainty of attenuator settingf = 128 MHz,0 dB to 70 dB, referenced to 10 dB RF attenuation < 0.2 dB (σ = 0.07 dB) Uncertainty of reference level setting < 0.2 dB (σ = 0.07 dB) S/N > 16 dBRBW ≤ 120 kHz 0 dB to –70 dB < 0.2 dB (σ = 0.07 dB) –70 dB to –90 dB < 0.5 dB (σ = 0.17 dB) RBW > 120 kHz 0 dB to –50 dB < 0.2 dB (σ = 0.07 dB) Log/lin display nonlinearity–50 dB to –70 dB < 0.5 dB (σ = 0.17 dB) referenced to RBW = 10 kHz 10 kHz to 120 kHz < 0.1 dB (σ = 0.03 dB) 300 kHz to 10 MHz < 0.2 dB (σ = 0.07 dB) Bandwidth switching uncertaintyFFT filter, 1 Hz to 3 kHz < 0.2 dB (σ = 0.07 dB)Total measurement uncertainty (95 % confidence level) Signal level 0 dB to –70 dB below reference level, S/N > 20 dB, RBW ≤ 120 kHz, DC-coupledwithout preselection/preamplifier < 3 GHz 0.5 dB 3 GHz to 7 GHz 1.5 dB with preselection/preamplifier < 3 GHz 1 dB3 GHz to 7 GHz 1.5 dB Quasi-peak indication in line with CISPR 16-1-1Version 03.00, June 20098 Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test ReceiverTrigger functionsTriggerTrigger sourcefree run, video, external, IF levelspan ≥ 10 Hz 125 ns to 100 s, resolution min. 125 ns (or 1 % of offset)Trigger offsetspan = 0 Hz±(125 ns to 100 s), resolution min. 125 ns, dependent on sweep timeMax. deviation of trigger offset±(125 ns + (0.1 % × trigger offset))Gated sweep Gate source video, external, IF level Gate delay 1 μs to 100 sGate length125 ns to 100 s, resolution min. 125 ns (or 1 % of gate length)Max. deviation of gate length± (125 ns + (0.1 % × gate length))Audio demodulationAF demodulation modes AM and FMAudio outputloudspeaker and earphone jack Marker hold time in analyzer modeselectable100 ms to 60 sInputs and outputs (front panel)RF inputImpedance 50 ΩConnector N femaleRF attenuation < 10 dB, DC-coupledR&S ®ESCI, R&S ®ESCI7 9 kHz to 1 GHz < 2.0, typ. 1.5 1 GHz to 3 GHz < 3.0, typ. 2.5 R&S ®ESCI73 GHz to 7 GHz< 3.0, typ. 2.5RF attenuation ≥ 10 dB, DC-coupledR&S ®ESCI, R&S ®ESCI7 9 kHz to 1 GHz < 1.2 1 GHz to 3 GHz < 1.5 R&S ®ESCI73 GHz to 7 GHz< 2.0RF attenuation < 10 dB, AC-coupledR&S ®ESCI9 kHz to 100 kHz 2.5 100 kHz to 1 GHz 2.0 1 GHz to 3 GHz 3.0 R&S ®ESCI71 MHz to 5 MHz 2.5 5 MHz to 1 GHz 2.0 1 GHz to 7 GHz3.0RF attenuation ≥ 10 dB, AC-coupledR&S ®ESCI9 kHz to 100 kHz typ. 2.5 100 kHz to 1 GHz < 1.2 1 GHz to 3 GHz < 1.5R&S ®ESCI71 MHz to 5 MHz typ. 2.5 5 MHz to 1 GHz < 1.2 1 GHz to3 GHz < 1.5 VSWR 3 GHz to 7 GHz< 2.0Setting range of attenuator 0 dB to 70 dB in steps of 5 dBProbe power supply Supply voltages+15 V DC, –12.6 V DC and ground, max. 150 mA, nominalVersion 03.00, June 2009Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test Receiver 9Power supply for antennas, etc. Supply voltages±10 V DC and ground, max. 100 mA, nominalUSB interface2 ports, type A plug, version 2.0AF output Connector3.5 mm jackImpedance 10 ΩOpen-circuit voltageadjustable up to 1.5 VInputs and outputs (rear panel)IF 20.4 MHz Connector BNC female Impedance50 Ωmixer level > –60 dBm RBW ≤ 100 kHz or FFT –10 dBm at reference level LevelRBW > 100 kHz0 dBm at reference levelReference frequency outputConnector BNC female Impedance 50 Ω Output frequency 10 MHzLevel 0 dBm, nominalReference frequency inputConnector BNC female Input frequency 10 MHzRequired level 0 dBm from 50 ΩPower supply for noise sourceConnector BNC female Output voltage switchable 28 V, nominalExternal trigger/gate inputConnector BNC female Impedance > 10 k Ω Trigger voltage 1.4 V (TTL)IEC/IEEE bus remote control interface in line with IEC 625-2 (IEEE 488.2)Connector 24-pin Amphenol female Command set SCPI 1997.0Interface functionsSH1, AH1, T6, SR1, RL1, PP1, DC1, DT1, C0Serial interfaceRS-232-C (COM), 9-pin D-SubPrinter interfaceparallel (Centronics compatible)upper connector type A plug, version 1.1 USB interface lower connectortype A plug, version 2.0External monitor (VGA) ConnectorVGA-compatible, 15-pin D-SubUser interface 25-pin D-SubVersion 03.00, June 200910 Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test ReceiverGeneral dataDisplay 21 cm TFT color display Resolution 640 × 480 pixel (VGA)Pixel error rate< 2 × 10–5Mass memory1.44 Mbyte 3½'' disk drive, hard disk Data storage R&S ®ESCI only> 500 instrument setups and tracesTemperature ranges+5 °C to + 40 °C Operating temperature range with R&S ®ESCI-B20 option 0 °C to +50 °C+5 °C to + 45 °C Permissible temperature range with R&S ®ESCI-B20 option 0 °C to +55 °C Storage temperature range –40 °C to +70 °CClimatic loading+40 °C at 95 % relative humidity (EN 60068-2-30)Mechanical resistance Sinusoidal vibration0.5 g from 5 Hz to 150 Hz, max. 2 g at 55 Hz,in line with EN 60068-2-6, EN 61010-1, MIL-T-28800D, class 510 Hz to 100 Hz, acceleration 1 g (rms) Random vibration with R&S ®ESCI-B20 option 10 Hz to 300 Hz, acceleration 1.9 g (rms) Shock40 g shock spectrum,in line with MIL-STD-810C and MIL-T-28800D, classes 3 and 5operation with external reference 2 years Recommended calibration interval operation with internal reference1 yearPower supply AC supply100 V to 240 V AC, 50 Hz to 400 Hz, 3.1 A to 1.3 A,class of protection I in line with VDE 411 Power consumption typ. 70 VASafety in line with EN 61010-1, UL 3111-1, CSA C22.2 No. 1010-1, IEC 1010-1 EMCEMC Directive 2004/108/EC including:EN 61326 class B (emission),CISPR 11/EN 55011 group 1 class B (emission)EN 61326 table A.1 (immunity, industrial)Test marksVDE, GS, CSA, CSA-NRTL/CDimensions and weight DimensionsW × H × D 412 mm × 197 mm × 417 mm (16.22 in × 7.76 in × 16.42 in) R&S ®ESCI10.5 kg (23.15 lb) Weight without options R&S ®ESCI712.4 kg (27.34 lb)Version 03.00, June 2009Rohde & Schwarz R&S ®ESCI/ESCI7 EMI Test Receiver 11Ordering informationDesignation Type Order No.EMI Test Receiver 9 kHz to 3 GHz R&S ®ESCI 1166.5950.03EMI Test Receiver 9 kHz to 7 GHz R&S ®ESCI7 1166.5950.07 Accessories suppliedPower cable, operating manual, service manualOptionsDesignation Type Order No.Rugged Case, with carrying handle R&S ®FSP-B1 1129.7998.02OCXO Reference Frequency R&S ®FSP-B4 1129.6740.02TV Trigger/RF Power Trigger R&S ®FSP-B6 1129.8594.02Internal Tracking Generator, I/Q Modulator R&S ®FSP-B9 1129.6991.02External Generator Control R&S ®FSP-B10 1129.7246.03LAN Interface 100BaseT R&S ®FSP-B16 1129.8042.03Expanded Environmental Specifications R&S ®ESCI-B20 1155.1606.14DC Power Supply R&S ®FSP-B30 1155.1158.02Battery Pack R&S ®FSP-B31 1155.1258.02Spare Battery Pack R&S ®FSP-B32 1155.1506.02Service OptionsDesignation Type Order No.R&S ®ESCIOne-Year Repair Service following the warranty periodR&S ®RO2ESCI 1166.5950.S16 Two-Year Repair Service following the warranty periodR&S ®RO3ESCI 1166.5950.S12 Four-Year Repair Service following the warranty periodR&S ®RO5ESCI 1166.5950.S14 Two-Year Calibration Service R&S ®CO2ESCI 1166.5950.S15Three-Year Calibration Service R&S ®CO3ESCI 1166.5950.S11Five-Year Calibration Service R&S ®CO5ESCI 1166.5950.S13R&S ®ESCI7One-Year Repair Service following the warranty periodR&S ®RO2ESCI7 1166.5950.S26 Two-Year Repair Service following the warranty periodR&S ®RO3ESCI7 1166.5950.S22 Four-Year Repair Service following the warranty periodR&S ®RO5ESCI7 1166.5950.S24 Two-Year Calibration Service R&S ®CO2ESCI7 1166.5950.S25Three-Year Calibration Service R&S ®CO3ESCI7 1166.5950.S21Five-Year Calibration Service R&S ®CO5ESCI7 1166.5950.S23For product brochure, see:• PD 0758.1558.12 (ESCI) • PD 5214.2762.12 (ESCI7)and About Rohde & SchwarzRohde & Schwarz is an independent group of companies specializing in electronics. It is a leading supplier of solu-tions in the fields of test and measurement, broadcasting, radiomonitoring and radiolocation, as well as secure com-munications. Established 75 years ago, Rohde & Schwarz has a global presence and a dedicated service network in over 70 countries. Company headquarters are in Munich, Germany.Regional contactEurope, Africa, Middle East+49 1805 12 42 42* or +49 89 4129 137 74 *********************************North America1888TESTRSA(188****8772)**********************************.com Latin America +1 410 910 79 88************************************Asia/Pacific+65 65 13 04 88**************************************Rohde & Schwarz GmbH & Co. KG Mühldorfstraße 15 | 81671 MünchenPhone +49 89 41 290 | Fax +49 89 41 29 121 R&S® is a registered trademark of Rohde & Schwarz GmbH & Co. KG Trade names are trademarks of the owners | Printed in Germany (sv) PD 0758.1558.22 | Version 03.00 | June 2009 | R&S®ESCI/ESCI7 Subject to change*0.14 €/min within German wireline network; rates may vary in othern etworks (wireline and mobile) and countries. Certified Environmental SystemISO 14001Certified Quality SystemISO 9001。
MCT系列精密芯片电阻说明书
MCT SERIESSPECIFICATIONSTYPICAL PERFORMANCE CHARACTERISTICSTHICK FILM PRECISION CHIP RESISTORS MILITARY GRADEChoice of termination materials: 100% tin plated nickel barrier is standard (palladium silver, gold, or tin-lead solder is available)Wraparound termination is standard, single sided termination is available (Option ‘S’)Wide resistance range: 0.1Ω to 100M Ω100% Group A screening per MIL-R-55342 available Wide design flexibility for use with hybrid or smd circuitry Custom sizes, high surge, untrimmed chips available Backside metalization availablePrecision performance to 0.1% 50ppm/°C!RCD series MCT chip resistors are designed to meetapplicable performance requirements of MIL-PRF-553421.Variety of sizes and termination materials allows wide design flexibility. Palladium silver terminations are recommended for use with conductive epoxy, gold is recommended for wire bonding, and tin plated nickel for soldering.* Dimension given is for single face termination. Add .004” [.1mm] for wraparound termination. ** Wattage based on mounting to ceramic substrate, derate by 25% if mounted to a glass epoxy P .C.B.1 Military p/n’s are given for reference only and do not imply qualification or exact interchangeability. 2 Dimension “t” (underside termination width) applies only to termination type WSingle Face Termination (Opt. S)Wraparound Termination (standard)D C R e p y T e g a t t a W **C °07@e g a t l o V g n i t a R e c n a t s i s e R e g n a R *L ]2.0[800.±W ]2.0[800.±t 2*T 2040T C M W M 05V 0301ΩM 1-]0.1[930.]15.[020.500.±210.]31.±3.[600.±410.]51.±53.[5050T C M W M 001V 051ΩM 01-]72.1[050.]72.1[050.700.±410.]81.±53.[600.±810.]51.±54.[3060T C M W M 001V 041.0ΩM 001-]35.1[060.]67.[030.600.±210.]51.±3.[600.±810.]51.±54.[5080T C M W M 051V 071.0ΩM 001-]19.1[570.]72.1[050.800.±610.]2.±4.[600.±810.]51.±05.[5001T C M W M 002V 0011ΩM 02-]45.2[001.]72.1[050.800.±810.]2.±54.[600.±020.]51.±05.[6021T C M W M 052V 5211.0ΩM 001-]51.3[421.]55.1[160.800.±020.]2.±5.[600.±020.]51.±05.[5051T C M W M 052V 5211ΩM 01-]18.3[051.]72.1[050.010±020.]52.±5.[600.±020.]51.±05.[0121T C M W M 005V 0511.0ΩM 001-]51.3[421.]45.2[001.010.±020.]52.±5.[600.±020.]51.±05.[0102T C M W M 008V 0511.0ΩM 001-]0.5[691.]45.2[001.010.±020.]52.±5.[600.±020.]51.±05.[2152T C M WM 0001V0021.0ΩM001-]3.6[842.]81.3[521.010.±020.]52.±5.[600.±020.]51.±05.[c i t s i r e t c a r a h C 01ΩM 1o t Ωe g n a r 01<ΩM 1>,Ωt n e i c i f f e o C .p m e T m p p 003±)d r a d n a t s (m p p 001±).t p o (m p p 05±).t p o (m p p 004±)d r a d n a t s (k c o h S l a m r e h T %5.0%5.0%5.0%57.0d a o l r e v O e m i T t r o h S %5.0%52.0%52.0%1e r u s o p x E .p m e T h g i H %5.0%5.0%5.0%57.0e c n a t s i s e R e r u t s i o M %5.0%5.0%5.0%5.1ef i L d a o L %0.1%5.0%5.0%5.1RESISTORS CAPACITOR S C OILS DELAY LINES35 70 105 140 150 175% O F R A T E D P O W E RDERATINGAMBIENT TEMPERATURE (°C)100 75 50 25 0FA045B Sale of this product is in accordance with GF-061. Specifications subject to change without notice.RCD Components Inc, 520 E.Industrial Park Dr, Manchester, NH, USA 03109 Tel: 603-669-0054 Fax: 603-669-5455 Email:***********************tLtWT17PART NUMBER DESIGNATION:RCD TypeOptional TC Characteristic : 50 = 50ppm, 101 =100ppm, 201= 200ppm, etc. (leave blank if standard)Packaging : B=bulk, T=tape&reel, W=waffle tray MCT0805 - 1001 - FT 101 WRes. Value: 4 digit code if tol. is 0.1% to 1%(R100=0.1Ω, 1R00=1Ω, 10R0=10Ω, 1000=100Ω,1001=1K Ω, 1002=10K , 1003=100K , 1004=1M Ω)3 digit code if ≥2% (R10=0.1Ω, 1R0=1Ω, 100= 10Ω,101=100Ω, 102=1K Ω, 103=10K , 104=100K ,105=1M Ω)Tolerance Code : B=0.1%, C=0.25%, D=0.5%,F=1%, G=2%, J=5%, K=10%, M=20%Termination Material : Standard = W (lead-free100% Tin with Nickel barrier). Optional = Q (Tin-Lead solder with Ni barrier), P= untinned Palladium Silver, G=GoldOptions: S = single sided termination(leave blank for wraparound termination)。
芯片测试仪设备操作指南说明书
MechanicsOscillationsElliptical Oscillation of a String PendulumDESCRIPTION OF ELLIPTICAL OSCILLATIONS OF A STRING PENDULUM AS THE SU-PERIMPOSITION OF TWO COMPONENTS PERPENDICULAR TO ONE ANOTHER.UE1050121 06/15 MEC/UDFig. 1: Experiment set-upGENERAL PRINCIPLESDepending on the initial conditions, a suitable suspended string pendulum will oscillate in such a way that the bob’s motion describes an ellipse for small pendulum deflections. If the motion is resolved into two perpendicu-lar components, there will be a phase difference between those components.This experiment will investigate the relationship by measuring the oscillations with the help of two perpendicularly mounted dynamic force sensors. The amplitude of the components and their phase difference will then be evaluated. The phase shift between the oscillations will be shown directly by displaying the oscillations on a dual-channel oscilloscope.Three special cases shed light on the situation:a) If the pendulum swings along the line bisecting the two force sensors, the phase shift φ = 0°.b) If the pendulum swings along a line perpendicular to that bisecting the two force sensors, the phase shift φ = 180°.c) If the pendulum bob moves in a circle, the phase shift φ =oscillation directions of the string pendulum under in-vestigationLIST OF EQUIPMENT1 SW String Pendulum Set 1012854 (U61025)1 SW Stand Equipment Set 1012849 (U61022)1 SW Sensors Set @230 V 1012850 (U61023-230) or1 SW Sensors Set (@115 V 1012851 (U61023-115) 1 USB Oscilloscope 2x50 MHz 1017264 (U112491)SET-UP∙Screw the stand rods with both external and internal threads into the outer threaded sockets of the base plate. ∙Extend both rods by screwing rods with external thread only onto the ends of them.∙Attach double clamps near the top of both stand rods and turn them to point inwards so that the slots are vertical and facing one another.∙Attach both springs from the spring module to the lugs on the cross bar (angled side).∙Hang the large loop of string from the lug on the flat side.Fig. 3 Assembly of spring module∙Connect the springs and vector plate to the hook of a dynamic force sensor with a small loop of string and care-fully pull everything taut.∙Attach the force sensor with the screw tightened by hand. ∙Attach the second force sensor in the same way.Fig. 4 Attachment of dynamic force sensors to spring module∙Pull the string through the eyelet of the spring module (in the middle of the metal disc).∙Thread the end of the string through the two holes of the length adjustment slider.Fig. 5 Set up of string3B Scientific GmbH, Rudorffweg 8, 21031 Hamburg, Germany, ∙Clamp the cross bar into the slots of the two double clamps, suspend a weight from the end of the string and set up the height of the pendulum using the length ad-justment slider.Fig. 6 Attachment of cross bar in double clamp ∙ Connect the force sensors to the inputs for channels A and B of the MEC amplifier board.∙ Connect outputs A and B of the MEC control unit to channels CH1 and CH2 of the oscilloscope.EXPERIMENT PROCEDURE∙Set the oscilloscope time base time/div to 1 s, select a vertical deflection for channels CH1 and CH2 of 50 mV DC and set the trigger to “Edge” mode, “Normal” sweep, “Source CH1” and “Slope +”.∙Slightly deflect the string pendulum and allow it to oscil-late in a plane which bisects the alignment of the two force sensors (oscillation path a in Fig. 2). Observe the oscilloscope trace and save it.∙Slightly deflect the string pendulum and allow it to oscil-late in a plane which is perpendicular to the one which bi-sects the two force sensors (oscillation path b in Fig. 2). Observe the oscilloscope trace and save it.∙Slightly deflect the string pendulum and allow it to oscil-late in a circle (oscillation path c in Fig. 2). Observe the oscilloscope trace and save it.SAMPLE MEASUREMENT AND EVALUA-TIONWhen the pendulum is oscillating in the plane of the bisecting angle between the sensors, the two sensors will experience symmetric loading (oscillation path a in Fig. 2). The signals from the two force sensors will be in phase, i.e. the phase shift between them will be φ= 0° (Fig. 7).Fig. 7: Oscillation components for a string pendulum swingingalong the line bisecting the two force sensorsWhen the pendulum is oscillating in the plane perpendicular to the bisecting angle between the sensors, the two sensors will experience asymmetric loading (oscillation path b in Fig. 2). The signals from the two force sensors will be wholly out of phase, i.e. the phase shift between them will be φ= 180° (Fig. 8).Fig. 8: Oscillation components for a string pendulum swingingalong the line perpendicular to that bisecting the two force sensorsThe circular oscillation is a superimposition of the oscillations along the plane of the bisecting angle between the sensors and the angle perpendicular to it with a phase shift of φ = 90°(Fig. 9).Fig. 9: Oscillation components for a string pendulum describ-ing a circle。
深圳市天成照明有限公司 AF51 产品规格书说明书
◆Mechanical Specification（产品特性）5.00mm*5.00mm*1.6mm SMD LED(表面贴片器件尺寸为5.00mm*5.00mm*.1.6mm)The materials of the LED dice is InGaN(发光二极管所用芯片材料为氮化铟镓)Suitable for all SMT assembly and welding process(适用于的所有的SMT装配和焊接工艺)moisture resistant grade：Level5a(防潮等级Level5a)◆Package Outline（封装尺寸)NOTES:1.All dimensions are in millimeters（所有标注尺寸的单位均为毫米）2.Tolerances are 0.2mm unless otherwise noted（除了特别注明,所有标注尺寸的公差均为±0.2mm)◆Absolute maximum ratings at Ta=25℃（绝对最大额定值）◆Electro-optical characteristics at Ta=25℃（电光特性）NOTE:(Tolerance:Iv±10%,λd±2nm,Vf±0.05V)（公差：Iv±10%,λd±2nm,Vf±0.05V）◆Typical optical characteristics curves （典型光学特性曲线）1.21.00.80.60.40.20.0400 450 500 550 600 650 700Waveleng t h [n m ]Spectral DistributionR e l a t i v e I n t e n s i t y v s .W a v e l e n g t h (T a =25。
C )R e l a t i v e I n t e n s i t y50250.01.52.0 2.53.0 3.54.0 4.5Forward Voltage VF(V)F o r w a r d c u r r e n t v s .F o r w a r d V o l t a g e (T a =25。
迪赛康科技（深圳）有限公司 ISI-Fixture V1.0 产品说明书
产品说明书产品名称：ISI高速测试板APPELLATION: ISI-Fixture版本号：V1.0迪赛康科技（深圳）有限公司1目录1.应用场景 (3)2.主要特点 (3)3.产品描述 (3)4.产品设计 (4)5.产品测试 (6)迪赛康科技（深圳）有限公司21.应用场景支持8Gbps（4Ghz），12.5Gbps（6.25Ghz）和16Gbps（8Ghz）多速率损耗应用2.主要特点•阻抗一致性优越，差分阻抗100Ω±%5。
•极低的插入损耗。
•各通道skew差异小于±2ps。
•SI性能优化至16Gbps•高性能SMA可拆卸连接器，最大带宽支持到40Ghz。
•3000mil~30000mil共16组不同长度损耗线，满足多损耗需求测试。
3.产品描述迪赛康ISI(Inter-Symbol Interference) 损耗测试板支持从8Gpbs到16Gbps 共16种损耗数值的测试。
采用SMA高速可拆卸连接器与仪器连接,板卡机械尺寸为376*249mm。
迪赛康科技（深圳）有限公司34.产品设计•ISI损耗测试板最短走线距离为3000mil，以上逐步递增，一直到30000mil，阻抗设计控制±5%，采用高速SMA可拆卸连接器与仪器或单板连接（最大带宽支持40Ghz）。
ISI测试板数据为理论计算加精确测试所得，可以保证整个通道的损耗精确度达到最高。
•迪赛康科技（深圳）有限公司4迪赛康科技（深圳）有限公司55.产品测试测试仪器：KEYSIGHT 网络分析仪E5071C（300khz—20Ghz）通过同轴线缆和SMP转接线连接单板校准线，测试单板实际损耗3000mil线长迪赛康科技（深圳）有限公司65000mil线长迪赛康科技（深圳）有限公司78000mil线长10000mil线长迪赛康科技（深圳）有限公司815000mil线长20000mil线长迪赛康科技（深圳）有限公司921000mil线长迪赛康科技（深圳）有限公司1022000mil线长23000mil线长24000mil线长迪赛康科技（深圳）有限公司1125000mil线长26000mil线长迪赛康科技（深圳）有限公司1227000mil线长28000mil线长迪赛康科技（深圳）有限公司1329000mil线长30000mil线长迪赛康科技（深圳）有限公司14迪赛康科技（深圳）有限公司15。
sit1042aqt规格书
sit1042aqt规格书Sit1042aqt规格书一、引言Sit1042aqt是一款先进的电子产品，具有多项功能和特点，本文将详细介绍该产品的规格和性能。
二、产品概述Sit1042aqt是一款高性能的电子设备，主要用于数据处理和通信。
它采用先进的技术和材料，具有以下特点：1. 处理能力强大：Sit1042aqt配备了先进的处理器和高速存储器，能够快速处理大量数据，提高工作效率。
2. 多功能设计：Sit1042aqt集成了多种功能模块，如通信模块、传感器模块等，可满足不同应用场景的需求。
3. 高精度测量：Sit1042aqt内置了精密的测量传感器，能够实时监测并记录各种物理量的变化，保证测量结果的准确性。
4. 省电节能：Sit1042aqt采用了先进的节能技术，能够在工作过程中最大限度地降低能耗，延长电池使用寿命。
三、主要规格参数1. 外观尺寸：Sit1042aqt的外观尺寸为100mm * 50mm * 10mm，便于携带和安装。
2. 处理器：Sit1042aqt采用64位处理器，主频高达2GHz，具有较强的运算能力。
3. 存储容量：Sit1042aqt内置32GB存储空间，可存储大量数据和文件。
4. 屏幕显示：Sit1042aqt配备了5英寸高清显示屏，分辨率达到1920 * 1080，图像清晰逼真。
5. 通信接口：Sit1042aqt支持多种通信接口，包括USB、蓝牙和Wi-Fi，可方便地与其他设备进行数据传输和共享。
6. 电池容量：Sit1042aqt内置5000mAh锂电池，可支持长时间的连续工作。
7. 操作系统：Sit1042aqt采用基于Android的操作系统，具有良好的用户界面和操作体验。
8. 工作温度：Sit1042aqt适用于-20℃至60℃的工作环境，能够在各种恶劣条件下正常工作。
四、应用领域Sit1042aqt广泛应用于各个领域，包括但不限于以下几个方面：1. 工业自动化：Sit1042aqt可用于工业生产过程中的数据采集、监控和控制，提高生产效率和质量。
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Low Power, Standard Frequency Oscillator
The Smart Timing Choice The Smart Timing Choice
Features
Applndard frequencies between 3.75 MHz and 77.76 MHz 100% pin-to-pin drop-in replacement to quartz-based XO Excellent total frequency stability as low as ±20 PPM Low power consumption of 3.6 mA typical Standby mode for longer battery life Fast startup time of 5 ms LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators Pb-free, RoHS and REACH compliant
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
Revised June 7, 2013
SiT1602
Low Power, Standard Frequency Oscillator
The Smart Timing Choice The Smart Timing Choice
Output Low Voltage
VOL
–
–
10%
Vdd
Input Characteristics Input High Voltage Input Low Voltage Input Pull-up Impedence VIH VIL Z_in 70% – – 2 – – 87 – – 30% 100 – Vdd Vdd k M
Electrical Characteristics[1]
Parameter and Conditions Output Frequency Range Frequency Stability Symbol f F_stab Min. Typ. Max. Unit MHz PPM PPM PPM °C °C V V V V V V mA mA mA mA mA A A A % ns ns ns Vdd No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V No load condition, f = 20 MHz, Vdd = 2.5V No load condition, f = 20 MHz, Vdd = 1.8V Vdd = 2.5V to 3.3V, OE = GND, output is Weakly Pulled Down Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down ST = GND, Vdd = 2.8V to 3.3V, Output is Weakly Pulled Down ST = GND, Vdd = 2.5V, Output is Weakly Pulled Down ST = GND, Vdd = 1.8V, Output is Weakly Pulled Down All Vdds Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80% Vdd =1.8V, 20% - 80% Vdd = 2.25V - 3.63V, 20% - 80% IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Pin 1, OE or ST Pin 1, OE or ST Pin 1, OE logic high or logic low, or ST logic high Pin 1, ST logic low Condition 50 standard frequencies between 3.75 MHz and 77.76 MHz Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load. Frequency Range (Refer to the frequency list page 10) -20 -25 -50 Operating Temperature Range T_use -20 -40 Supply Voltage Vdd 1.62 2.25 2.52 2.7 2.97 2.25 Current Consumption Idd – – – OE Disable Current Standby Current I_OD I_std – – – – – Duty Cycle Rise/Fall Time DC Tr, Tf 45 – – – Output High Voltage VOH 90% – – – – – 1.8 2.5 2.8 3.0 3.3 – 3.8 3.6 3.4 – – 2.6 1.4 0.6 – 1 1.3 – – +20 +25 +50 +70 +85 1.98 2.75 3.08 3.3 3.63 3.63 4.5 4.2 3.9 4 3.8 4.3 2.5 1.3 55 2 2.5 2 – Frequency Stability and Aging
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, SSD, GPON, EPON, etc Ideal for high-speed serial protocols such as: USB, SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
Operating Temperature Range Extended Commercial Industrial Contact SiTime for 1.5V support
Supply Voltage and Current Consumption
LVCMOS Output Characteristics
[3]
Top View
OE/ST
1 4
VDD
2 3 4
GND
2
3
OUT
Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor value of 0.1 µF between Vdd and GND is recommended.
Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.
Pin Description
Parameter Storage Temperature VDD Electrostatic Discharge Soldering Temperature (follow standard Pb free soldering guidelines) Junction Temperature Min. -65 -0.5 – – – Max. 150 4 2000 260 150 Unit °C V V °C °C
Pin Symbol OE/ ST 1 22 Output Enable Standby GND OUT VDD Power Output Power Functionality H or Open[2]: specified frequency output L: output is high impedance. Only output driver is disabled. H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. Electrical ground[3] Oscillator output Power supply voltage