LME49710MANOPB系列规格书,Datasheet 资料

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L4970A

引言由于开关稳压电源具有体积小、重量轻、高效节能、输入电压范围宽、适应范围广、保护功能全等特点,已广泛应用于电子产品的各个领域。

在此给出一种基于L4970A芯片实现的具有双路10A输出的电压可调型开关稳压电源。

L4970A大功率PWM开关稳压电源芯片是意法公司(SGS－Thomson)的第二代新品,它的最大特点是直接输出10A大电流、具有过流过热软起动等完备的保护功能,因而用它实现的电源简单可靠。

下面首先给出该芯片的主要性能特点、封装和关键外围元件参数选择等,重点介绍由该芯片实现的双路10A输出电压可调的开关稳压电源工作原理、具体电路、调试安装和注意事项等。

2 L4970A简介2.1 主要性能指标和特点L4970系列是意法公司继L4960系列之后新推出的单片开关式稳压器。

它是采用DMOS开关功率管、混合式CMOS、双极型晶体管等集成电路制造新工艺研制而成,L4970A是其中的代表。

其主要性能特点如下：(1)输出电流大,最大可达10A,适宜制作200～400W大功率单片开关稳压电源。

(2)开关频率高,可达400kHz,常选200kHz(允许±20kHz偏差),从而提高电源效率,减小滤波电感体积。

(3)输入输出压差低,可降到1.1V左右,自身耗能低,电源效率高。

对于Ui=50V,Uo=40V,Io=10A的电源,效率可达92.5％。

(4)输入电压范围宽,正常值（15～50）V,极限值为（11～55）V。

输出电压控制灵活,可在（5.1～40）V范围内连续调整。

若直接从U0反馈,可得到固定5.1V输出。

典型电压调整率SV=5mV,负载调整率SI=15mV,输出纹波ΔU=30mV,纹波抑制比为60dB。

最大限流值由内部电路限定。

(5)除软起动、限流保护、过热保护等完善的保护电路外,还增加了欠压锁定、PWM锁存、掉电复位等电路。

(6)误差放大器开环增益大于60dB,电源电压抑制比PMRR=80dB,输入失调电压2mV。

NORCO EMB-4940 V1.0用户手册说明书

EMB-4940V1.0说明除列明随产品配置的配件外，本手册包含的内容并不代表本公司的承诺，本公司保留对此手册更改的权利，且不另行通知。

对于任何因安装、使用不当而导致的直接、间接、有意或无意的损坏及隐患概不负责。

订购产品前，请向经销商详细了解产品性能是否符合您的需求。

NORCO 是深圳华北工控有限公司的注册商标。

本手册所涉及到的其他商标，其所有权为相应的产品厂家所拥有。

未经许可，不得以机械的、电子的或其它任何方式进行复制。

温馨提示1．产品使用前，务必仔细阅读产品说明书。

2．对未准备安装的板卡，应将其保存在防静电保护袋中。

3．在从包装袋中拿板卡前，应将手先置于接地金属物体上一会儿，以释放身体及手中的静电。

4．在拿板卡时，需佩戴静电保护手套，并且应该养成只触及其边缘部分的习惯。

5．主板与电源连接时，请确认电源电压。

6．为避免人体被电击或产品被损坏，在每次对主板、板卡进行拔插或重新配置时，须先关闭交流电源或将交流电源线从电源插座中拔掉。

7．在对板卡进行搬动前，先将交流电源线从电源插座中拔掉。

8．当您需连接或拔除任何设备前，须确定所有的电源线事先已被拔掉。

9．为避免频繁开关机对产品造成不必要的损伤，关机后，应至少等待30秒后再开机。

10．设备在使用过程中出现异常情况，请找专业人员处理。

11．此为A级产品，在生活环境中，该产品可能会造成无线电干扰。

在这种情况下，可能需要用户对其干扰采取切实可行的措施。

目录第一章产品介绍 (1)1.1 产品规格 (1)第二章安装说明 (3)2.1 接口位置和尺寸图 (3)2.2 安装步骤 (3)2.3 内存安装 (4)2.4 跳线功能设置 (4)2.4.1 CMOS内容清除/保持设置（JCC） (4)2.4.2LVDS额定电压选择跳线（JLVDS） (5)2.4.3EDP电压选择跳线（JP3） (6)2.4.4 来电开机硬件开关（JAT） (6)2.5 接口说明 (7)2.5.1 SATA接口（SATA，SATAPWR） (7)2.5.2 串行接口（COM1、COM2、COM3-6、J1、J2、J3） (8)2.5.3USB接口（USB12，USB34，USB56，USB78） (10)2.5.4 网络接口（LAN1、LAN2） (12)2.5.5 显示接口（LVDS、HDMI、JVGA） (13)2.5.6 LVDS背光设置接口（LVDS_BKLT） (15)2.5.7 键盘鼠标接口（KBMS） (15)2.5.8 可编程输入输出口（JGP） (16)2.5.9 电源接口（PWR1，PWR2） (17)2.5.10 风扇接口（CPU_FAN） (17)2.5.11 音频接口（AUDIO） (18)2.5.12 功放接口（JAMP） (19)2.5.13 EDP(CON30) (20)2.5.14 前面板接口（JFP） (21)2.5.15 内存插槽 (22)2.5.16MINI PCIe接口 (22)第三章BIOS程序设置 (21)AMI BIOS刷新 (21)AMI BIOS描述 (21)BIOS参数设置 (21)3.1 Main菜单 (22)3.2 Advanced (23)3.2.1 ACPI Settings (24)3.2.2 IT8783 Super I0 Configuration (25)3.2.3 Hardware Monitor (28)3.2.4 APM Configuration (29)3.2.5 Serial Port Console Redirection (30)3.2.6 CPU Configuration (32)3.2.7 PPM Configuration (35)3.2.8 SATA Configuration (36)3.2.9 LPCC&SCC Configuration (37)3.2.10 Network Stack Configuration (38)3.2.11 CSM Configuration (39)3.2.12 USB Configuration (40)3.3 Chipset菜单 (41)3.3.1 North Bridge (42)3.3.2 South Bridge (43)3.4 Boot菜单 (44)3.5 Security 菜单 (45)3.6 Save&Exit菜单 (46)附录 (44)附一：Watchdog编程指引 (44)附三：驱动程序安装 (48)第一章产品介绍1.1 产品规格结构标准●标准4寸主板尺寸●165mm×115mm（长×宽）处理器●支持Intel® Celeron® Processor J1900 处理器，(2M Cache, up to 2.42 GHz)，4核；显示●1个LVDS/EDP接口,1个VGA接口, 1个HDMI接口●其中LVDS由芯片（CH7511）转出，EDP由桥片直接引出来，支持18/24BIT，分辨率支持1920*1200●其中1VGA；支持分辨率1920x1200 @60 Hz;●其中1个HDMI是桥片引出，支持分辨率2560x1600 @60 Hz系统内存●ON BOARD 内存，支持DDR3L-1333，内存容量最高可达Up to 4GBytes，默认4GB；存储●提供1个标准的7 Pin SATA 3.0接口, 1个2.54mm 1x5Pin小白座子（SATA供电）；LAN功能●网络控制器：采用I211网络芯片●2个标准RJ45接口●支持网络唤醒（WOL）●速率：10/100/1000MbpsAUDIO●采用ALC662-VD0音频控制芯片；●接口：1XMic_in,1XLINE_OUT；●5W双通道功放；I/0功能●采用ITE 8783 I/O芯片●串口：提供6个串口，2*5简牛座子，模式；COM1/3/4/5/6支持RS232模式，COM2支持RS232/RS485/RS422；●USB：提供8个标准的USB2.0接口，其中1个标准的USB3.0接口，7个USB2.0，提供ESD 保护，3个标准座子，2个2*5的小白座子；扩展接口●MINIPCIe：1个MINI PCIe/3G/4G /无线网卡可选，1个支持MSATA；1个SIM卡槽；支持3G/4G模块；1个2.00mm 2x5PIN JFP 前面板接口；电源支持●支持单电源+12V供电，支持硬件及软件来电自启动功能；看门狗●支持硬件复位功能BIOS●64MB SPI BIOSKBMS:●键盘鼠标接口,2X4 PIN 2.00mm；环境●工作温度：-15℃～70℃●储存温度：-40℃～85℃●工作湿度：5%~95%，无凝露EMB-4940 V1.0主板说明书第二章安装说明2.1 接口位置和尺寸图下图为EMB-4940的正面接口位置和尺寸图。

沃希欧 Siliconix Si4946BEY 双极性 60V 175℃ 沉浸式FET数据手册说明书

Vishay SiliconixSi4946BEYDocument Number: Dual N-Channel 60-V (D-S) 175 °C MOSFETFEATURES•Halogen-free According to IEC 61249-2-21Definition•TrenchFET ® Power MOSFET•175 °C Maximum Junction Temperature •100 % R g Tested•Compliant to RoHS directive 2002/95/ECPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)Q g (Typ.)600.041 at V GS = 10 V 6.59.2 nC0.052 at V GS = 4.5 V5.8Notes:a. Surface Mounted on 1" x 1" FR4 board.b. t = 10 s.c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedarameter Symbol Limit UnitDrain-Source Voltage V DS 60VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 150 °C)T C = 25 °CI D 6.5A T C = 70 °C 5.5T A = 25 °C 5.3a, b T A = 70 °C4.4a, b Pulsed Drain CurrentI DM 30Continuous Source Drain Diode Current T C = 25 °C I S 3.1T A = 25 °C 2a, b Avalanche CurrentL = 0 1 mH I AS 12Single-Pulse Avalanche EnergyE AS 7.2mJ Maximum Power DissipationT C = 25 °CP D 3.7W T C = 70 °C 2.6T A = 25 °C 2.4a, b T A = 70 °C1.7a, b Operating Junction and Storage T emperature RangeT J , T stg - 55 to 175°C THERMAL RESISTANCE RATINGSarameter Symbol Typical Maximum UnitMaximum Junction-to-Ambient a, c t ≤ 10 s R thJA 5062.5°C/WMaximum Junction-to-Foot (Drain)Steady StateR thJF3341 Document Number: 73411Vishay SiliconixSi4946BEYNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedarameter Symbol Test Conditions Min.Typ.Max.Unit StaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA60VV DS Temperature Coefficient ΔV DS /T J I D = 250 µA 53mV/°C V GS(th) Temperature Coefficient ΔV GS(th)/T J - 6.7Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.02.43.0VGate-Source LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100 nAZero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V 1µA V DS = 60 V , V GS = 0 V, T J = 55 °C10On-State Drain Current aI D(on) V DS ≥ 5 V , V GS = 10 V 30A Drain-Source On-State Resistance a R DS(on) V GS = 10 V , I D = 5.3 A 0.0330.041ΩV GS = 4.5 V , I D = 4.7 A 0.0410.052Forward T ransconductance a g fs V DS = 15 V , I D = 5.3 A24SDynamicbInput Capacitance C iss V DS = 30 V, V GS = 0 V , f = 1 MHz 840pFOutput CapacitanceC oss 71Reverse Transfer Capacitance C rss 44Total Gate Charge Q g V DS = 30 V, V GS = 10 V, ID = 5.3 A 1725nCV DS = 30 V , V GS = 5 V, I D = 5.3 A9.212Gate-Source Charge Q gs 3.3Gate-Drain Charge Q gd 3.7Gate Resistance R g f = 1 MHz3.16.59.5ΩTurn-On Delay Time t d(on) V DD = 30 V , R L = 6.8 ΩI D ≅ 4.4 A, V GEN = 4.5 V , R g = 1 Ω2030nsRise Timet r 120180Turn-Off Delay Time t d(off) 2030Fall Timet f 3045Turn-On Delay Time t d(on) V DD = 30 V , R L = 6.8 Ω I D ≅ 4.4 A, V GEN = 10 V , R g = 1 Ω1015Rise Timet r 1220Turn-Off Delay Time t d(off) 2540Fall Timet f1015Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C3.1A Pulse Diode Forward Current a I SM 30Body Diode VoltageV SD I S = 2 A0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 4.4 A, dI/dt = 100 A/µs, T J = 25 °C2550ns Body Diode Reverse Recovery Charge Q rr 2550nC Reverse Recovery Fall Time t a 18nsReverse Recovery Rise Timet b7Document Number: On-Resistance vs. Drain Current and Gate VoltageTransfer CharacteristicsCapacitance Document Number: 73411Vishay SiliconixSi4946BEYTYPICAL CHARACTERISTICS 25°C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, Junction-to-AmbientDocument Number: Vishay SiliconixSi4946BEYTYPICAL CHARACTERISTICS 25°C, unless otherwise noted* The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Current Derating*Power, Junction-to-CaseSingle Pulse Avalanche CapabilitySi4946BEYVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise notedNormalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?73411. Document Number: 73411Vishay SiliconixPackage InformationDocument Number: DIM MILLIMETERSINCHESMin Max Min Max A 1.35 1.750.0530.069A 10.100.200.0040.008B 0.350.510.0140.020C 0.190.250.00750.010D 4.80 5.000.1890.196E 3.804.000.1500.157e 1.27 BSC0.050 BSCH 5.80 6.200.2280.244h 0.250.500.0100.020L 0.500.930.0200.037q 0°8°0°8°S0.440.640.0180.026ECN: C-06527-Rev. I, 11-Sep-06DWG: 5498V I S H A Y S I L I C O N I XTrenchFET ® Power MOSFETsMounting LITTLE FOOT ®, SO-8 Power MOSFETsA P P L I C A T I O N N O T EWharton McDanielSurface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same.See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package.In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.020 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board.Figure 1. Single MOSFET SO-8 Pad Pattern With Copper SpreadingFigure 2. Dual MOSFET SO-8 Pad PatternWith Copper SpreadingThe minimum recommended pad patterns for the single-MOSFET SO-8 with copper spreading (Figure 1) and dual-MOSFET SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose.Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, “thermal” connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically.A final item to keep in mind is the width of the power traces.The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.020 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device.Application Note 826Vishay SiliconixA P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-8Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.Revision: 02-Oct-121Document Number: 91000。

IRLML0040TRPBF;中文规格书,Datasheet资料

100 D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
0.001 1E-006
1E-005
Fig 4. Normalized On-Resistance Vs. Temperature 3
ID, Drain-to-Source Current (A)
/
IRLML0040TRPbF
C, Capacitance (pF)
10000 1000 100
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
IRLML0040TRPbF
ID, Drain Current (A)
4.2
3.6
3
2.4
1.8
1.2
0.6
0 25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
4
1
1msec
0.1 TA = 25°C Tj = 150°C Single Pulse
10msec
0.01
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area

/
PD @TA = 25°C
Maximum Power Dissipation

PMEM4020APD,115;中文规格书,Datasheet资料

1.Product proﬁle1.1General descriptionCombination of a PNP transistor with low V CEsat and high current capability and a planar Schottky barrier rectiﬁer with an integrated guard ring for stress protection in a SOT457(SC-74) small plastic package. NPN complement: PMEM4020AND1.2FeaturesI 600 mW total power dissipation I High current capability up to 2 AI Reduces printed-circuit board area required I Reduces pick and place costs I Small plastic SMD package ITransistorN Low collector-emitter saturation voltage I DiodeN Ultra high-speed switching N Very low forward voltage N Guard ring protected1.3ApplicationsI DC-to-DC converters I Inductive load driversI General purpose load driversI Reverse polarity protection circuits IMOSFET drivers1.4Quick reference dataPMEM4020APDPNP transistor/Schottky rectiﬁer moduleRev. 02 — 31 August 2009Product data sheetTable 1.Quick reference data Symbol ParameterConditions Min Typ Max Unit PNP transistorV CEO collector-emitter voltage open base --−40V I Ccollector current (DC)continuous;T s ≤ 55°C[1]--−2A[1]Soldering point of collector or cathode tab.2.Pinning information3.Ordering information4.Marking5.Limiting valuesSchottky barrier rectiﬁerV R continuous reverse voltage --40V I Fcontinuous forward current--1ATable 1.Quick reference data …continued Symbol ParameterConditionsMin Typ Max Unit Table 2.Discrete pinningPin Description Simpliﬁed outline Symbol1emitter 2not connected 3cathode 4anode 5base 6collector132456sym04036145Table 3.Ordering informationType numberPackage NameDescriptionVersion PMEM4020APDSC-74plastic surface mounted package; 6 leadsSOT457Table 4.MarkingType number Marking code PMEM4020APDD3Table 5.Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit PNP transistorV CBO collector-base voltage open emitter -−40V V CEO collector-emitter voltage open base -−40V V EBOemitter-base voltageopen collector-−5V[1]Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.[2]Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm 2 mounting pad for both collector and cathode.[3]Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.[4]Soldering point of collector or cathode tab.I Ccollector current (DC)continuous [1]-−0.75A continuous [2]-−1A continuous [3]-−1.3A continuous;T s ≤ 55°C[4]-−2A I CM peak collector current -−3A I BM peak base current -−1A P tottotal power dissipationT amb ≤ 25°C [1]-295mW T amb ≤ 25°C [2]-400mW T amb ≤ 25°C [3]-500mW T s ≤ 55°C[4]-1000mW T j junction temperature -150°C Schottky barrier rectiﬁerV R continuous reverse voltage -40V I F continuous forward voltage -1A I FRM repetitive peak forward currentt p ≤ 1 ms;δ≤ 0.5- 3.5A I FSM non-repetitive peak forward currentt = 8 ms; square wave -10A P tottotal power dissipationT amb ≤ 25°C [1]-295mW T amb ≤ 25°C [2]-400mW T amb ≤ 25°C [3]-500mW T s ≤ 55°C[4]-1000mW T j junction temperature [2]-150°C Combined deviceP tot total power dissipation T amb ≤ 25°C[2]-600mW T stg storage temperature −65+150°C T ambambient temperature[2]−65+150°CTable 5.Limiting values …continuedIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditions Min Max Unit6.Thermal characteristics[1]For Schottky barrier rectiﬁers thermal run-away has to be considered, as in some applications the reverse power losses P R are a signiﬁcant part of the total power losses. Nomograms for determining the reverse power losses P R and I F(AV) rating will be available on request.[2]Soldering point of collector or cathode tab.[3]Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.[4]Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm 2 mounting pad for both collector and cathode tab.[5]Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.Table 6.Thermal characteristics [1]Symbol Parameter Conditions Min Typ Max Unit Single device R th(j-s)thermal resistance from junction to soldering point in free air [2]--95K/W R th(j-a)thermal resistance from junction to ambientin free air[3]--250K/W [4]--315K/W [5]--425K/W Combined device R th(j-a)thermal resistance from junction to ambientin free air[3]--208K/W7.Characteristics[1]Pulse test: t p ≤ 300µs;δ≤ 0.02Table 7.CharacteristicsT amb = 25°C unless otherwise speciﬁed Symbol ParameterConditionsMin Typ Max Unit PNP transistorI CBOcollector-base cut-off current V CB =−40 V; I E = 0 A --−100nA V CB =−40 V; I E = 0 A;T j = 150°C--−50µA I CEO collector-emitter cut-off current V CE =−30 V; I B = 0 A --−100nA I EBO emitter-base cut-off current V EB =−5 V; I C = 0 A --−100nAh FEDC current gainV CE =−5 V; I C =−1 mA 300--V CE =−5 V; I C =−100 mA 300--V CE =−5 V; I C =−500 mA 250-900V CE =−5 V; I C =−1 A 160--V CE =−5 V; I C =−2 A[1]50--V CEsatcollector-emitter saturation voltageI C =−100 mA; I B =−1 mA --−120mV I C =−500 mA; I B =−50 mA --−145mV I C =−1 A; I B =−100 mA --−260mV I C =−2 A; I B =−200 mA--−530mV R CEsat equivalent on-resistance I C =−1 A; I B =−100 mA [1]-180280m ΩV BEsat base-emittersaturation voltage I C =−1 A; I B =−100 mA [1]--−1.1V V BEon base-emitter turn-on voltageV CE =−5 V; I C =−1 A [1]--−1.0V f T transition frequency V CE =−10 V; I C =−50 mA;f = 100 MHz150--MHz C ccollector capacitanceV CB =−10 V; I E = i e = 0 A;f = 1 MHz --10pFSchottky barrier rectiﬁer V Fcontinuous forward voltagesee Figure 1I F = 0.1 mA [1]-95130mV I F = 1 mA [1]-155210mV I F = 10 mA [1]-220270mV I F = 100 mA [1]-295350mV I F = 1000 mA[1]-540640mV I Rreverse currentsee Figure 2V R = 10 V [1]-720µA V R = 40 V[1]-30100µA C ddiode capacitanceV R = 1 V; f = 1 MHz;see Figure 3-4348pFSchottky barrier rectiﬁer (1)T amb =150°C (2)T amb =85°C (3)T amb =25°CSchottky barrier rectiﬁer (1)T amb =150°C (2)T amb =85°C (3)T amb =25°CFig 1.Forward current as a function of forward voltage; typical valuesFig 2.Reverse current as a function of reverse voltage; typical valuesSchottky barrier rectiﬁer;T amb = 25°C; f = 1 MHzPNP transistor;V CE =−5 V (1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CFig 3.Diode capacitance as a function of reverse voltage; typical valuesFig 4.DC current gain as a function of collector current; typical values0.60.40.2010310210110−1mdb669I F (mA)V F (V)(1)(2)(3)020103040V R (V)mdb670105104103102101I R (µA)(1)(2)(3)05102010008015604020mdb671V R (V)C d (pF)012002004006008001000mhc088−10−1h FE −10−1I C (mA)−102−103−104(1)(2)(3)PNP transistor;V CE =−5 V (1)T amb =−55°C (2)T amb = 25°C (3)T amb = 150°CPNP transistor;I C /I B = 10(1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CFig 5.Base-emitter voltage as a function of collector current; typical valuesFig 6.Collector-emitter saturation voltage as a function of collector current; typical valuesPNP transistor;I C /I B = 10(1)T amb = 150°C (2)T amb = 25°C (3)T amb =−55°CPNP transistor;V CE =−10 VFig 7.Equivalent on-resistance as a function of collector current; typical valuesFig 8.Transition frequency as a function of collector current−10−1−10−1mhc089−10−1−1−10V BE (V)I C (mA)−103−102−104(1)(2)(3)−103−102−10−1mhc090−1−10V CEsat (mV)I C (mA)−102−103−104(1)(2)(3)10110−1102mhc091−10−1−1−10R CEsat (Ω)I C (mA)−103−102−104(1)(2)(3)0−100030010020025050150−200−400f T (MHz)I C (mA)−600−800mhc0928.Application informationFig 9.DC-to-DC converterFig 10.Inductive load driver (relays, motors andbuzzers) with free-wheeling diodemgu866V OUTV INCONTROLLERmgu867V CCIN9.Package outlineFig 11.Package outline SOT457 (SC-74)REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDECJEITA SOT457SC-74w BM b pD epin 1indexAA 1L pQdetail XH EE v M AA B yscalecX13245601 2 mmPlastic surface-mounted package (TSOP6); 6 leadsSOT457UNIT A 1b p c D E H E L p Q y w v mm0.10.0130.400.253.12.70.260.101.71.3e 0.953.02.50.20.10.2DIMENSIONS (mm are the original dimensions)0.60.20.330.23A 1.10.905-11-0706-03-1610.Packing informationTable 8.Packing methodsThe indicated -xxx are the last three digits of the 12NC ordering code.[1]Type number Package Description Packing quantity300010000 PMEM4020APD SOT457 4 mm pitch, 8 mm tape and reel; T1-115-1354 mm pitch, 8 mm tape and reel; T2-125-165 [1]For further information and the availability of packing methods, see Section13.分销商库存信息: NXPPMEM4020APD,115。

LME49810TBNOPB, 规格书,Datasheet 资料

LME49810LME49810 200V Audio Power Amplifier Driver with Baker ClampLiterature Number: SNAS391B芯天下--/September 2007 LME49810200V Audio Power Amplifier Driver with Baker ClampGeneral DescriptionThe LME49810 is a high fidelity audio power amplifier driver designed for demanding consumer and pro-audio applica-tions. Amplifier output power may be scaled by changing the supply voltage and number of power transistors. The LME49810’s minimum output current is 50mA. When using a discrete output stage the LME49810 is capable of delivering in excess of 300 watts into a single-ended 8Ω load.Unique to the LME49810 is an internal Baker Clamp. This clamp insures that the amplifier output does not saturate when over driven. The resultant “soft clipping” of high level audio signals suppresses undesirable audio artifacts gener-ated when conventional solid state amplifiers are driven hard into clipping.The LME49810 includes thermal shutdown circuitry that ac-tivates when the die temperature exceeds 150°C. The LME49810’s mute function, when activated, mutes the input drive signal and forces the amplifier output to a quiescent state.Key Specifications■ Wide operating voltage range±20V to ±100V ■ Slew Rate50V/μs (typ)■ Output Drive Current60mA (typ)■ PSRR (f = DC)110dB (typ)■ THD+N (f = 1kHz)0.0007 (typ)Features■Very high voltage operation■Output clamp logic output■Thermal shutdown and mute■Customizable external compensation■Scalable output powerApplications■Guitar amplifiers■Powered studio monitors■Powered subwoofers■Pro audio■Audio video receivers■High voltage industrial applicationsBoomer® is a registered trademark of National Semiconductor Corporation.Tru-GND is a trademark of National Semiconductor Corporation.© 2007 National Semiconductor LME49810 200V Audio Power Amplifier Driver with Baker ClampTypical Application20216772FIGURE 1. LME49810 Audio Amplifier Schematic 2L M E 49810Connection DiagramTB Package20216702Top ViewOrder Number LME49810TBSee NS Package Number TB15AN = National LogoU = Fabrication plant codeZ = Assembly plant codeXY = 2 Digit date codeTT = Die traceabilityTB = Package codePin DescriptionsPin Pin Name Description1ClpFlag Baker Clamp Clip Flag Output2Mute Mute Control3GND Device Ground4IN+Non-Inverting Input5IN–Inverting Input6Comp External Compensation Connection7NC No Connect, Pin electrically isolated8Osense Output Sense9NC No Connect, Pin electrically isolated10–VEENegative Power Supply11BiasMNegative External Bias Control12BiasPPositive External Bias Control13Sink Output Sink14Source Output Source15+VCCPositive Power Supply LME498101894EML20216708FIGURE 2. LME49810 Simplified Schematic 4Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Supply Voltage |V+| + |V-|200V Differential Input Voltage±6VCommon Mode Input Range0.4VEE to 0.4VCCPower Dissipation (Note 3)4W ESD Susceptibility (Note 4)1kV ESD Susceptibility (Note 5)200V Junction Temperature (TJMAX) (Note 9)150°C Soldering InformationT Package (10 seconds)260°C Storage Temperature–40°C to +150°C Thermal Resistance θJA73°C/W θJC4°C/WOperating RatingsTemperature RangeTMIN≤ TA≤ TMAX−40°C ≤ T A≤ +8 5°CSupply Voltage±20V ≤ VSUPPLY≤ ±100VElectrical Characteristics VCC = +100V, VEE= –100V (Notes 1, 2)The following specifications apply for IMUTE = 100μA, unless otherwise specified. Limits apply for T A = 25°C, C C = 10pF, and A V =29dB.Symbol Parameter ConditionsLME49810Units(Limits) Typical(Note 6)Limits(Notes 7, 8)ICCQuiescent Power Supply Current V CM = 0V, V O = 0V, I O = 0A1118mA (max)IEEQuiescent Power Supply Current V CM = 0V, V O = 0V, I O = 0A13mA (max)THD+N Total Harmonic Distortion + Noise No Load, BW = 30kHzVOUT= 30VRMS, f = 1kHz0.0007% (max)A V Open Loop Gainf = DCf = 1kHz, VIN= 1mVRMS12088dBdBVOMOutput Voltage Swing THD+N = 0.05%, f = 1kHz67.5V RMSV NOISE Output NoiseBW = 30kHz,A-weighted5034150μVμV (max)IOUTOutput Current Current from Source to Sink Pins6050mA (min)I MUTE Current into Mute Pin To activate the amplifier10050200μA (min)μA (max)SR Slew Rate VIN= 1VP-P,f = 10kHz square Wave50V/μs(min)V OS Input Offset Voltage VCM= 0V, IO= 0mA13mV (max)I B Input Bias Current VCM= 0V, IO= 0mA100200nA (max)PSRR Power Supply Rejection Ratio f = DC, Input Referred110105dB (min)V CLIP Baker Clamp Clipping VoltageClip OutputSource pinSink pin97.2–96.495.5–95.5V (max)V (min)VBCBaker Clamp Flag Output Voltage I FLAG = 4.7mA0.4VVBABias P&M Pin Open Voltage BiasP - BiasM10VIBIASBias Adjust Function Current 2.8mALME49810Note 1:All voltages are measured with respect to the GND pin unless otherwise specified.Note 2:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.Note 3:The maximum power dissipation must be derated at elevated temperatures and is dictated by T JMAX , θJC , and the ambient temperature, T A . The maximum allowable power dissipation is P DMAX = (T JMAX - T A ) / θJC or the number given in Absolute Maximum Ratings, whichever is lower. For the LME49810, T JMAX = 150°C and the typical θJC is 4°C/W. Refer to the Thermal Considerations section for more information.Note 4:Human body model, 100pF discharged through a 1.5k Ω resistor.Note 5:Machine Model, 220pF - 240pF discharged through all pins.Note 6:Typicals are measured at +25°C and represent the parametric norm.Note 7:Limits are guaranteed to National's AOQL (Average Outgoing Quality Level).Note 8:Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.Note 9:The maximum operating junction temperature is 150°C.Note 10:Data taken with Bandwidth = 30kHz, A V = 29dB, C C = 10pF, and T A = 25°C except where specified. 6L M E 49810LME4981020216709FIGURE 3. LME49810 Test Circuit Schematic (DC Coupled)Typical Performance Characteristics(Note 10)THD+N vs Frequency +V CC = –V EE = 20V, V O = 5V20216744THD+N vs Frequency +V CC = –V EE = 20V, V O = 10V20216745THD+N vs Frequency +V CC = –V EE = 50V, V O = 14V 20216746THD+N vs Frequency +V CC = –V EE = 50V, V O = 20V20216747THD+N vs Frequency +V CC = –V EE = 100V, V O = 14V 20216748THD+N vs Frequency +V CC = –V EE = 50V, V O = 30V20216749 8L M E 49810THD+N vs Output Voltage +V CC = – V EE = 50V, f = 20Hz 20216757THD+N vs Output Voltage +V CC = –V EE = 100V, f = 20Hz20216755THD+N vs Output Voltage +V CC = –V EE = 50V, f = 1kHz 20216753THD+N vs Output Voltage +V CC = – V EE = 100V, f = 1kHz20216754THD+N vs Output Voltage +V CC = –V EE = 50V, f = 20kHz 20216758THD+N vs Output Voltage +V CC = –V EE = 100V, f = 20kHz20216756LME49810THD+N vs Output Voltage +V CC = –V EE = 20V, f = 20Hz 20216751THD+N vs Output Voltage +V CC = –V EE = 20V, f = 1kHz20216750THD+N vs Output Voltage +V CC = –V EE = 20V, f = 20kHz 20216752Closed Loop Frequency Response +V CC = –V EE = 50V, V IN = 1V RMS20216735Closed Loop Frequency Response +V CC = –V EE = 100V, V IN = 1V RMS20216736PSRR vs Frequency +V CC = –V EE = 100V,No Filters, Input referred, V RIPPLE = 1V RMS on V CC pin20216726L M E 49810PSRR vs Frequency +V CC = –V EE = 100V,No Filters, Input referred, V RIPPLE = 1V RMS on V EE pin20216727Mute Attenuation vs I MUTE+V CC = –V EE = 100V20216724Output Voltage vs Supply Voltage20216725Slew Rate vs Compensation Capacitor+V CC = –V EE = 100V, V IN = 1.2V P 10kHz squarewave20216728Supply Current vs Supply Voltage 20216741Input Offset Voltage vs Supply Voltage20216737LME49810Open Loop Gain and Phase Margin+V CC = –V EE = 100V 20216738CMRR vs Frequency +V CC = –V EE = 100V20216722Noise Floor+V CC = –V EE = 50V, V IN = 0V 20216742Noise Floor+V CC = –V EE = 100V, V IN = 0V20216743Baker Clamp Flag Output+V CC = –V EE = 100V, V IN = 4V RMS , f IN = 20kHzCh1: Output, Ch2: CLPFLAG Output20216734L M E 49810Application InformationMUTE FUNCTIONThe mute function of the LME49810 is controlled by the amount of current that flows into the MUTE pin. LME49810typically requires 50μA to 100μA of mute current flowing in order to be in “play” mode. This can be done by connecting a reference voltage (V MUTE ) to the MUTE pin through a resistor (R M ). The following formula can be used to calculate the mute current.I MUTE = (V MUTE -0.7V) / (R M +10k Ω) (A)(1)The 10k Ω resistor value in Equation 1 is internal. Please refer to Figure 2, LME49810 Simplified Schematic, for additional details. For example, if a 5V voltage is connected through a 33k Ω resistor to the MUTE pin, then the mute current will be 100μA, according to Equation 1. Consequently, R M can be changed to suit any other reference voltage requirement. The LME49810 will enter Mute mode if I MUTE is less than 1μA which can be accomplished by shorting the MUTE pin to ground or by floating the MUTE pin. It is not recommended that more than 200μA flow into the MUTE pin because dam-age to LME49810 may occur and device may not function properly.BAKER CLAMP AND CLAMP FLAG OUTPUTThe LME49810 features a Baker Clamp function with corre-sponding CLPFLAG output pin. The clamp function keeps all transistors in linear operation when the output goes into clip-ping. In addition, when the output goes into clipping, a logic low level appears at the CLPFLAG pin. The CLPFLGAG pin can be used to drive an LED or some other visual display as shown by Figure 1. The value of logic low voltage varies and depends on I FLAG . For example, if I FLAG is 4.7mA then a volt-age (V BC ) of 0.4V will appear at the CLPFLAG output pin. The smooth response of the Baker Clamp and the corresponding CLPFLAG logic output is shown in the scope photo below:20216740+V CC = -V EE = 100V, V IN = 4V RMS , f IN = 1kHz, R C = 1k ΩCh1: Output, Ch2: CLPFLAG Output The CLPFLAG pin can source up to 10mA, and since the CLPFLAG output is an open collector output as shown by Figure 2, LME49810 Simplified Schematic, it should never be left to float under normal operation. If CLPFLAG pin is not used, then it should be connected through a resistor to a ref-erence voltage so that I FLAG is below 10mA. For example, a resistor of 1k can be used with a 5V reference voltage. This will give the I FLAG of 4.7mA. In a typical LED setup, if +5Vreference voltage is not available, the following circuit using a Zener diode can be used to power the CLPFLAG pin from the higher supply voltage rails of the LME49810. The power dissipation rating of R Z will need to be at-least ½W if using a 5V Zener Diode. Alternately, the following basic formula can be used to find the proper power rating of R Z : P DZ = (V CC -V Z )2/R Z (W). This formula can also be used to meet the design requirements of any other reference voltage that the user de-sires.20216770THERMAL PROTECTIONThe LME49810 has a thermal protection scheme to prevent long-term thermal stress of the device. When the temperature on the die exceeds 150°C, the LME49810 goes into thermal shutdown. The LME49810 starts operating again when the die temperature drops to about 145°C, but if the temperature again begins to rise, shutdown will occur again above 150°C.Therefore, the device is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will cause the device to cycle between the thermal shut-down temperature limits of 150°C and 145°C. This greatly reduces the stress imposed on the IC by thermal cycling,which in turn improves its reliability under sustained fault con-ditions. Since the die temperature is directly dependent upon the heat sink used, the heat sink should be chosen so that thermal shutdown is not activated during normal ing the best heat sink possible within the cost and space constraints of the system will improve the long-term reliability of any power semiconductor device, as discussed in the De-termining the Correct Heat Sink section.POWER DISSIPATIONWhen in “play” mode, the LME49810 draws a constant amount of current, regardless of the input signal amplitude.Consequently, the power dissipation is constant for a given supply voltage and can be computed with the equation P DMAX = I CC * (V CC – V EE ). For a quick calculation of P DMAX ,approximate the current to be 11mA and multiply it by the total supply voltage (the current varies slightly from this value over the operating range).DETERMINING THE CORRECT HEAT SINKThe choice of a heat sink for a high-power audio amplifier is made entirely to keep the die temperature at a level such that the thermal protection circuitry is not activated under normal circumstances.The thermal resistance from the die to the outside air, θJA (junction to ambient), is a combination of three thermal resis-tances, θJC (junction to case), θCS (case to sink), and θSA (sink to ambient). The thermal resistance, θJC (junction to case), of the LME49810 is 4°C/W. Using Thermalloy Thermacote ther-mal compound, the thermal resistance, θCS (case to sink), is about 0.2°C/W. Since convection heat flow (power dissipa-tion) is analogous to current flow, thermal resistance is anal-ogous to electrical resistance, and temperature drops areLME49810analogous to voltage drops, the power dissipation out of the LME49810 is equal to the following:P DMAX = (T JMAX −T AMB ) / θJA(2)where T JMAX = 150°C, T AMB is the system ambient tempera-ture and θJA = θJC + θCS + θSA .20216771Once the maximum package power dissipation has been cal-culated using Equation 2, the maximum thermal resistance,θSA , (heat sink to ambient) in °C/W for a heat sink can be calculated. This calculation is made using Equation 3 which is derived by solving for θSA from Equation 2.θSA = [(T JMAX −T AMB )−P DMAX (θJC +θCS )] / P DMAX(3)Again it must be noted that the value of θSA is dependent upon the system designer's amplifier requirements. If the ambient temperature that the audio amplifier is to be working under is higher than 25°C, then the thermal resistance for the heat sink, given all other things are equal, will need to be smaller.PROPER SELECTION OF EXTERNAL COMPONENTS Proper selection of external components is required to meet the design targets of an application. The choice of external component values that will affect gain and low frequency re-sponse are discussed below.The overall gain of the amplifier is set by resistors R F and R i for the non-inverting configuration shown in Figure 1. The gain is found by Equation 4 below given R i = R IN and R F = R S .A V = R F / R i (V/V)(4)For best Noise performance, lower values of resistors are used. A value of 243 is commonly used for R i and setting the value for R F for desired gain. For the LME49810 the gain should be set no lower than 10V/V. Gain settings below 10V/V may experience instability.The combination of R i and C i (see Figure 1) creates a high pass filter. The gain at low frequency and therefore the re-sponse is determined by these components. The -3dB point can be determined from Equation 5 shown below:f i = 1 / (2πR i C i ) (Hz)(5)If an input coupling capacitor (C IN ) is used to block DC from the inputs as shown in Figure 1, there will be another high pass filter created with the combination of C IN and R IN . The resulting -3dB frequency response due to the combination of C IN and R IN can be found from equation 6 shown below:f IN = 1 / (2πR IN C IN ) (Hz)(6)For best audio performance, the input capacitor should not be used. Without the input capacitor, any DC bias from the source will be transferred to the load. The feedback capacitor (C i ) is used to set the gain at DC to unity. Because a large value is required for a low frequency -3dB point, the capacitoris an electrolytic type. An additional small value, high quality film capacitor may be used in parallel with the feedback re-sistor to improve high frequency sonic performance. If DC offset in the output stage is acceptable without the feedback capacitor, it may be removed but DC gain will now be equal to AC gain.COMPENSATION CAPACITORThe compensation capacitor (C C ) is one of the most critical external components in value, placement and type. The ca-pacitor should be placed close to the LME49810 and a silver mica type will give good performance. The value of the ca-pacitor will affect slew rate and stability. The highest slew rate is possible while also maintaining stability through out the power and frequency range of operation results in the best audio performance. The value shown in Figure 1 should be considered a starting value with optimization done on the bench and in listening testing. Please refer to Slew Rate vs.C C Graph in Typical Performance Characteristics for de-termining the proper slew rate for your particular application.SUPPLY BYPASSINGThe LME49810 has excellent power supply rejection and does not require a regulated supply. However, to eliminate possible oscillations all op amps and power op amps should have their supply leads bypassed with low-inductance capac-itors having short leads and located close to the package terminals. Inadequate power supply bypassing will manifest itself by a low frequency oscillation known as “motorboating”or by high frequency instabilities. These instabilities can be eliminated through multiple bypassing utilizing a large elec-trolytic capacitor (10μF or larger) which is used to absorb low frequency variations and a small ceramic capacitor (0.1μF) to prevent any high frequency feedback through the power sup-ply lines. If adequate bypassing is not provided the current in the supply leads which is a rectified component of the load current may be fed back into internal circuitry. This signal causes low distortion at high frequencies requiring that the supplies be bypassed at the package terminals with an elec-trolytic capacitor of 470μF or more.OUTPUT STAGE USING BIPOLAR TRANSISTORSWith a properly designed output stage and supply voltage of ±100V, an output power up to 500W can be generated at 0.05% THD+N into an 8Ω speaker load. With an output cur-rent of several amperes, the output transistors need substan-tial base current drive because power transistors usually have quite low current gain—typical h fe of 50 or so. To increase the current gain, audio amplifiers commonly use Darlington style devices. Power transistors should be mounted together with the V BE multiplier transistor on the same heat sink to avoid thermal run away. Please see the section Biasing Tech-nique and Avoiding Thermal Runaway for additional infor-mation.BIASING TECHNIQUES AND AVOIDING THERMAL RUNAWAYA class AB amplifier has some amount of distortion called Crossover distortion. To effectively minimize the crossover distortion from the output, a V BE multiplier may be used in-stead of two biasing diodes. The LME49810 has two dedicat-ed pins (BIAS M and BIAS P ) for Bias setup and provide a constant current source of about 2.8mA. A V BE multiplier nor-mally consists of a bipolar transistor (Q MULT , see Figure 1) and two resistors (R B1 and R B2, see Figure 1). A trim pot can also be added in series with R B1 for optional bias adjustment. A properly designed output stage, combine with a V BE multiplier,L M E 49810can eliminate the trim pot and virtually eliminate crossover distortion. The V CE voltage of Q MULT (also called BIAS of the output stage) can be set by following formula:V BIAS = V BE (1+R B2/R B1) (V)(7)When using a bipolar output stage with the LME49810 (as in Figure 1), the designer must beware of thermal runaway.Thermal runaway is a result of the temperature dependence of V BE (an inherent property of the transistor). As temperature increases, V BE decreases. In practice, current flowing through a bipolar transistor heats up the transistor, which lowers the V BE . This in turn increases the current gain, and the cycle re-peats. If the system is not designed properly this positive feedback mechanism can destroy the bipolar transistors used in the output stage. One of the recommended methods of preventing thermal runaway is to use the same heat sink on the bipolar output stage transistor together with V BE multiplier transistor. When the V BE multiplier transistor is mounted to the same heat sink as the bipolar output stage transistors, it tem-perature will track that of the output transistors. Its V BE is dependent upon temperature as well, and so it will draw more current as the output transistors heat up, reducing the bias voltage to compensate. This will limit the base current into the output transistors, which counteracts thermal runaway. An-other widely popular method of preventing thermal runaway is to use low value emitter degeneration resistors (R E1 and R E2). As current increases, the voltage at the emitter also in-creases, which decreases the voltage across the base andemitter. This mechanism helps to limit the current and coun-teracts thermal runaway.LAYOUT CONSIDERATION AND AVOIDING GROUND LOOPSA proper layout is virtually essential for a high performance audio amplifier. It is very important to return the load ground,supply grounds of output transistors, and the low level (feed-back and input) grounds to the circuit board common ground point through separate paths. When ground is routed in this fashion, it is called a star ground or a single point ground. It is advisable to keep the supply decoupling capacitors of 0.1μF close as possible to LME49810 to reduce the effects of PCB trace resistance and inductance. Following the general rules will optimize the PCB layout and avoid ground loops problems:a) Make use of symmetrical placement of components.b) Make high current traces, such as output path traces, as wide as possible to accomodate output stage current require-ment.c) To reduce the PCB trace resistance and inductance, same ground returns paths should be as short as possible. If pos-sible, make the output traces short and equal in length.d) To reduce the PCB trace resistance and inductance,ground returns paths should be as short as possible.e) If possible, star ground or a single point ground should be observed. Advanced planning before starting the PCB can improve audio performance.LME49810Demo Board Schematic20216707FIGURE 4. LME49810 Test demo board schematicL M E 49810Demonstration Board Layout20216704Silkscreen Layer20216706Top Layer LME4981020216703Bottom LayerL M E 49810LME49810 Revision HistoryRev Date Description1.005/24/07Initial WEB release.1.0105/29/07Few text edits.1.0209/17/07Edited curve 20216724.Physical Dimensions inches (millimeters) unless otherwise notedTO–247 15–Lead Package Order Number LME49810TB NS Package Number TB15A 20L M E 49810LME49810 NotesNotesL M E 49810 200V A u d i o P o w e r A m p l i f i e r D r i v e r w i t h B a k e r C l a m pTHE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF TH E CONTENTS OF TH IS PUBLICATION AND RESERVES TH E RIGH T TO MAKE CH ANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITH OUT NOTICE. NO LICENSE, WH ETH ER EXPRESS,IMPLIED, ARISING BY ESTOPPEL OR OTH ERWISE, TO ANY INTELLECTUAL PROPERTY RIGH TS IS GRANTED BY TH IS DOCUMENT.TESTING AND OTH ER QUALITY CONTROLS ARE USED TO TH E EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WH ERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR TH EIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. 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As used herein:Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness.National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders.Copyright© 2007 National Semiconductor CorporationFor the most current product information visit us at National Semiconductor Americas Customer Support Center Email:new.feedback@ Tel: 1-800-272-9959National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530-85-86Email: europe.support@ Deutsch Tel: +49 (0) 69 9508 6208English Tel: +49 (0) 870 24 0 2171Français Tel: +33 (0) 1 41 91 8790National Semiconductor Asia Pacific Customer Support Center Email: ap.support@National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507Email: jpn.feedback@ Tel: 81-3-5639-7560IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries(TI)reserve the right to make corrections,modifications,enhancements,improvements, and other changes to its products and services at any time and to discontinue any product or service without notice.Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete.All products are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard warranty.Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty.Except where mandated by government requirements,testing of all parameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design.Customers are responsible for their products and applications using TI components.To minimize the risks associated with customer products and applications,customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license,either express or implied,is granted under any TI patent right,copyright,mask work right, or other TI intellectual property right relating to any combination,machine,or process in which TI products or services are rmation published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a warranty or endorsement e of such information may require a license from a third party under the patents or other intellectual property of the third party,or a license from TI under the patents or other intellectual property of TI.Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties,conditions,limitations,and notices.Reproduction of this information with alteration is an unfair and deceptive business practice.TI is not responsible or liable for such altered rmation of third parties may be subject to additional restrictions.Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.TI products are not authorized for use in safety-critical applications(such as life support)where a failure of the TI product would reasonably be expected to cause severe personal injury or death,unless officers of the parties have executed an agreement specifically governing such use.Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications,and acknowledge and agree that they are solely responsible for all legal,regulatory and safety-related requirements concerning their products and any use of TI products in such safety-critical applications,notwithstanding any applications-related information or support that may be provided by TI.Further,Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in such safety-critical applications.TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are specifically designated by TI as military-grade or"enhanced plastic."Only products designated by TI as military-grade meet military specifications.Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at the Buyer's risk,and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. 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LME49710_07中文资料

Key Specifications
■ Power Supply Voltage Range
±2.5V to ±17V
■ THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
RL = 2kΩ
0.00003% (typ)
RL = 600Ω
0.00003% (typ)
■ Input Noise Density
2.5nV/√Hz (typ)
■ Slew Rate
±20V/μs (typ)
■ Gain Bandwidth Product
55MHz (typ)
■ Open Loop Gain (RL = 600Ω)
140dB (typ)
■ Input Bias Current
7nA (typ)
■ Input Offset Voltage
Metal Can
20210402
Order Number LME49710HA See NS Package Number — H08C
20210405
3

元器件交易网
LME49710
Absolute Maximum Ratings (Notes 1, 2)
0.05mV (typ)
■ DC Gain Linearity Error
0.000009%
Features
■ Easily drives 600Ω loads ■ Optimized for superior audio signal fidelity ■ Output short circuit protection ■ PSRR and CMRR exceed 120dB (typ) ■ SOIC, DIP, TO-99 metal can packages

运放——精选推荐

运放可更换运放是Titanium HD的卖点之⼀，玩家可以根据⾃⼰的⾳⾊喜好更换对应兼容的运算放⼤器。

但我们⼀直并不喜欢这种设计，它多少反映了⼚商对⾳⾊的不⾃信，另外，使⽤插座⽐焊接更容易造成接触不良。

这张声卡的原配运放⼗分⾼档，JRC2114D应该是作为滤波和电流电压转换⽤途，⽽LME49710⽤于运算放⼤，这是⼀颗极低失真和极低噪声的芯⽚，其理论失真度（THD+N）可以低达0.00003%，这在业界属于最顶级⽔平。

LME49710和LME49713是国半的两款顶级单运放，49710是电压反馈型运放，49713是电流反馈型运放。

这两个运放的参数⾮常优秀，代表了⽬前模拟集成器件的最⾼⽔准。

49710的数据：FeaturesEasily drives 600 loadsOptimized for superior audio signal fidelityOutput short circuit protectionPSRR and CMRR exceed 120dB (typ)SOIC, DIP, TO-99 metal can packagesKey Specification ■Power Supply V oltage Range ±2.5V to ±17V■THD+N (A V = 1, VOUT = 3VRMS, fIN = 1kHz)RL = 2k? 0.00003% (typ)RL = 600? 0.00003% (typ)■Input Noise Density 2.5nV/ √^Hz (typ)■Slew Rate ±20V/µs (typ)■Gain Bandwidth Product 55MHz (typ)■Open Loop Gain (RL = 600?) 140dB (typ)■Input Bias Current 7nA (typ)■Input Offset V oltage 0.05mV (typ)■DC Gain Linearity Error 0.000009%General Description The LME49710 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications.49713的数据：FeaturesEasily drives 150 loadsOptimized for superior audio signal fidelityOutput short circuit protection102dB (typ) PSRR and 88dB (typ) CMRRSOIC High Performance and Metal can packagesKey Specification ■Power Supply V oltage Range ±5V to ±18V■THD+N(A V = 1, RL = 100?, VOUT = 3VRMS,f = 1kHz) 0.0006% (typ)■THD+N(A V = 1, RL = 600?, VOUT = 1.4VRMS,f = 1kHz) 0.00008% (typ)■Input Noise Density 1.9nV/ √^Hz (typ)■Slew Rate ±1900V/µs (typ)■Bandwidth(A V = –1, RL= 2k?, RF = 1.2k?) 132MHz (typ)■Input Bias Current 1.8µA (typ)■Input Offset V oltage 0.05mV (typ)General Description The LME49713 is an ultra-low distortion, low noise, ultra high slew rate current feedback operational amplifier optimized and fully specified for high performance, high fidelity applications.【名称】发烧级⾳频运放【型号】LM49710HA（⾦封）【⼚商】NS国家半导体公司【产地】美国【规格】TO-99⾦属封装【成⾊】全新原装进⼝正品,质量上乘。

SQT-103-01-F-D;SQT-106-01-LM-D;SQT-110-03-F-D;SQT-120-01-F-S;中文规格书,Datasheet资料

SPECIFICATIONS
For complete speciﬁcations see ?SQT
Mates with: TMMH, TMM, MTMM, MMT, TW, LTMM, ZLTMM, ESQT, TCMD
Choice of one through six rows
SQT-106-01-LM-D SQT-112-01-F-D SQT-110-01-L-Q
SQT-110-03-F-D SQT-107-01-L-T SQT-125-01-F-D
(2,29) .050 .090
(2,00) .0787
–RA OPTION
(–Q, –5 & –6 not available)

/
分销商库存信息:
SAMTEC SQT-103-01-F-D SQT-120-01-F-S SQT-110-01-LM-Q SQT-116-01-S-D
TMM/ SQT TMMH
HORIZONTAL
(2,00mm) .0787" pitch
1
NO. PINS PER ROW
LEAD STYLE
(6,35mm) .250"
PLATING OPTION
ROW OPTION
Note: Some lengths, styles and options are non-standard, non-returnable.
20°C
5.5A
(2,62mm) .103" to (5,03mm) .198" Insertion Force: (Single contact only)
40°C
5A
60°C

美国国家半导体暨三垦器件音频器件技术交流研讨会

提供
经证明的模拟设计专长
我们对于音频的了解
先进的处理技术: 模拟 CMOS, 高压双极和 BiCMOS
封装领域卓越的领先地位
创新型在线设计工具
世界一流的制造商
© 2006 National Semiconducto围内主要的手提式产品制造商进行合作。
56 MHz
• 开环增益
140 dB
• 输入偏置电流
10 nA
• PSRR 和 CMRR
>110 dB
• 输出短路保护
• 封装 – LM4562HA (To-99 金属容器封装)
– LM4562MA (SO-8)
– LM4562NA (DIP-8)
© 2006 National Semiconductor Corporation
0.00003%
• 输入噪声密度
2.5 nV/√Hz
• 转换速率
±20 V/uS
• 增益带宽积
56 MHz
• 开环增益
140 dB
• 输入偏置电流
7 nA
• PSRR 和 CMRR
>110 dB
• 输出短路保护
• 封装 – LME49710HA (To-99 金属容器封装)
– LME49710MA (SO-8)
器件中提取的最大增益 • 在高频率下，提供更多的失真成份抑制
LM4562
© 2006 National Semiconductor Corporation
17
LM4562 参数比较
THD(1 kHz)
转换速率
GBWP 噪声D. (1kHz)
PSRR X-Talk 电源电压范围
LM833

LME49740MANOPB,LME49740NANOPB,LME49740MAXNOPB,LME49740MABD,LME49740NABD, 规格书,Datasheet 资料

LME49740LME49740 Quad High Performance, High Fidelity Audio Operational AmplifierLiterature Number: SNAS377A芯天下--/February 8, 2008LME49740Quad High Performance, High Fidelity Audio Operational AmplifierGeneral DescriptionThe LME49740 is part of the ultra-low distortion, low noise,high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity bining advanced leading-edge process technology with state-of-the-art circuit design, the LME49740 audio opera-tional amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49740 combines extremely low voltage noise density (2.7nV/√HZ) with van-ishingly low TH D+N (0.00003%) to easily satisfy the most demanding audio applications. To ensure that the most chal-lenging loads are driven without compromise, the LME49740has a high slew rate of ±20V/μs and an output current capa-bility of ±26mA. Further, dynamic range is maximized by an output stage that drives 2k Ω loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads.The LME49740's outstanding CMRR(120dB), PSRR(120dB),and V OS (0.1mV) give the amplifier excellent operational am-plifier DC performance.The LME49740 has a wide supply range of ±2.5V to ±17V.Over this supply range the LME49740’s input circuitry main-tains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49740is unity gain stable. The Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF.The LME49740 is available in 14–lead narrow body SOIC and 14–lead plastic DIP. Demonstration boards are available for each package.Key Specifications■ Power Supply Voltage Range ±2.5V to ±17V■ THD+N (A V = 1, V OUT = 3V RMS , f IN = 1kHz)R L = 2k Ω0.00003% (typ) R L = 600Ω0.00003% (typ)■ Input Noise Density 2.7nV/√Hz (typ)■ Slew Rate±20V/μs (typ)■ Gain Bandwidth Product 55MHz (typ)■ Open Loop Gain (R L = 600Ω)140dB (typ)■ Input Bias Current 10nA (typ)■ Input Offset Voltage 0.1mV (typ)■ DC Gain Linearity Error0.000009%Features■Easily drives 600Ω loads■Optimized for superior audio signal fidelity ■Output short circuit protection■PSRR and CMRR exceed 120dB (typ)■SOIC and DIP packagesApplications■Ultra high quality audio amplification ■High fidelity preamplifiers ■High fidelity multimedia■State of the art phono pre amps■High performance professional audio■High fidelity equalization and crossover networks ■High performance line drivers ■High performance line receivers ■High fidelity active filters© 2008 National Semiconductor Corporation LME49740 Quad High Performance, High Fidelity Audio Operational AmplifierTypical Application20210502FIGURE 1. Passively Equalized RIAA Phono PreamplifierConnection Diagram20210501Order Number LME49740MA See NS Package Number — M14A Order Number LME49740NA See NS Package Number — N14A 2L M E 49740Absolute Maximum Ratings (Notes 1, 2)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Power Supply Voltage (V S = V + - V -)36VStorage Temperature −65°C to 150°CInput Voltage(V-) - 0.7V to (V+) + 0.7VOutput Short Circuit (Note 3)Continuous Power DissipationInternally LimitedESD Susceptibility (Note 4)2000V ESD Susceptibility (Note 5)200V Junction Temperature 150°CThermal Resistance θJA (MA)107°C/W θJA (NA)74°C/WTemperature RangeT MIN ≤ T A ≤ T MAX –40°C ≤ T A ≤ 85°C Supply Voltage Range±2.5V ≤ V S ≤ ± 17VElectrical Characteristics(Notes 1, 2)The following specifications apply for V S = ±15V, R L = 2k Ω, f IN = 1kHz,and T A = 25C, unless otherwise specified.SymbolParameterConditionsLME49740Units (Limits)Typical Limit (Note 6)(Notes 7, 8)THD+NTotal Harmonic Distortion + NoiseA V = 1, V OUT = 3V RMSR L = 2k Ω R L = 600Ω0.000030.000030.00009% (max)% (max)IMD Intermodulation Distortion A V = 1, V OUT = 3V RMSTwo-tone, 60Hz & 7kHz 4:10.00005 % (max)GBWP Gain Bandwidth Product 5545MHz (min)SR Slew Rate±20±15V/μs (min)FPBWFull Power BandwidthV OUT = 1V P-P , –3dBreferenced to output magnitude at f = 1kHz10MHzt sSettling timeA V = 1, 10V step, C L = 100pF 0.1% error range 1.2μs e nEquivalent Input Noise Voltagef BW = 20Hz to 20kHz 0.340.65μV RMSEquivalent Input Noise Density f = 1kHz f = 10Hz 2.76.4 4.7 nV /√Hz nV /√Hz i n Current Noise Density f = 1kHz f = 10Hz 1.63.1 pA /√Hz pA /√HzV OSOffset Voltage±0.1±0.7mV (max)ΔV OS /ΔTemp Average Input Offset Voltage Drift vsTemperature40°C ≤ T A ≤ 85°C0.2 μV/°C PSRR Average Input Offset Voltage Shift vsPower Supply Voltage ΔV S = 20V (Note 9)120110dB (min)ISO CH-CH Channel-to-Channel Isolation f IN = 1kHz f IN = 20kHz 118112 dB dB I BInput Bias Current V CM = 0V1072nA (max)ΔI OS /ΔTemp Input Bias Current Drift vs Temperature –40°C ≤ T A ≤ 85°C 0.1 nA/°C I OS Input Offset CurrentV CM = 0V1165nA (max)V IN-CM Common-Mode Input Voltage Range +14.1–13.9(V+)–2.0(V-)+2.0V (min)V (min)CMRR Common-Mode Rejection –10V<V CM <10V 120110dB (min)Z INDifferential Input Impedance30 k ΩCommon Mode Input Impedance –10V<V CM <10V1000 M ΩA VOLOpen Loop Voltage Gain–10V<V OUT <10V, R L = 600Ω140 dB (min)–10V<V OUT <10V, R L = 2k Ω140 dB (min)–10V<V OUT <10V, R L = 10k Ω140125dB (min)3LME49740SymbolParameterConditionsLME49740Units (Limits)Typical Limit (Note 6)(Notes 7, 8)V OUTMAX Maximum Output Voltage Swing R L = 600Ω±13.6±12.5V (min)R L = 2k Ω±14.0 V (min)R L = 10k Ω±14.1 V (min)I OUT Output Current R L = 600Ω, V S = ±17V ±26±23mA (min)I OUT-CC Short Circuit Current+30–38 mA mA R OUT Output Impedancef IN = 10kHz Closed-Loop Open-Loop 0.0113ΩΩC LOAD Capacitive Load Drive Overshoot 100pF 16 %I STotal Quiescent CurrentI OUT = 0mA18.520mA (max)Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Note 2:Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.Note 3:Amplifier output connected to GND, any number of amplifiers within a package.Note 4:Human body model, 100pF discharged through a 1.5k Ω resistor.Note 5:Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).Note 6:Typical specifications are specified at +25ºC and represent the most likely parametric norm.Note 7:Tested limits are guaranteed to National's AOQL (Average Outgoing Quality Level).Note 8:Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.Note 9:PSRR is measured as follows: V OS is measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔV OS /ΔV S )|. 4L M E 49740Typical Performance CharacteristicsTHD+N vs Output Voltage V CC = 15V, V EE = –15V, R L = 2k Ω20210515THD+N vs Output Voltage V CC = 17V, V EE = –17V, R L = 2k Ω20210516THD+N vs FrequencyV CC = 15V, V EE = –15V, R L = 2k Ω, V OUT = 3V RMS 20210511THD+N vs FrequencyV CC = 17V, V EE = –17V, R L = 2k Ω, V OUT = 3V RMS20210513THD+N vs FrequencyV CC = 15V, V EE = –15V, R L = 600Ω, V OUT = 3V RMS 20210512THD+N vs FrequencyV CC = 17V, V EE = –17V, R L = 600Ω, V OUT = 3V RMS20210514LME49740IMD vs Output VoltageV CC = 15V, V EE = –15V, R L = 2k Ω20210553IMD vs Output VoltageV CC = 17V, V EE = –17V, R L = 2k Ω20210554PSRR+ vs Frequency V CC = 15V, V EE = –15V,R L = 2k Ω, V RIPPLE = 200mVpp20210559PSRR- vs FrequencyV CC = 15V, V EE = –15V, R L = 2k ΩR L = 2k Ω, V RIPPLE = 200mVpp20210560CMRR vs FrequencyV CC = 15V, V EE = –15V, R L = 2k Ω20210552Crosstalk vs Frequency V CC = 15V, V EE = –15V, R L = 2k Ω20210519 6L M E 49740Output Voltage vs Supply VoltageRL= 2kΩ, THD+N = 1%20210518Output Voltage vs Load ResistanceTHD+N = 1%20210517Supply Current vs Supply VoltageRL= 2kΩ, THD+N = 1%20210507Full Power Bandwidth vs Frequency20210520Gain Phase vs Frequency20210551Voltage Noise Density vs Frequency20210557LME49740Small-Signal Transient ResponseA V = 1, C L = 100pF 20210556Large-Signal Transient ResponseA V = 1, C L = 100pF20210555 8L M E 49740Application InformationDISTORTION MEASUREMENTSThe vanishingly low residual distortion produced by LME49740 is below the capabilities of all commercially avail-able equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion me-ter to the amplifier’s inputs and outputs. The solution, how-ever, is quite simple: an additional resistor. Adding this resistor extends the resolution of the distortion measurement equipment.The LME49740’s low residual distortion is an input referred internal error. As shown in Figure 2, adding the 10Ω resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noise gain. The result is that the error signal (distortion) is amplified by a factor of 101. Al-though the amplifier’s closed-loop gain is unaltered, the feed-back available to correct distortion errors is reduced by 101, which means that measurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep the value of R1 low as shown in Figure 2.This technique is verified by duplicating the measurements with high closed loop gain and/or making the measurements at high frequencies. Doing so produces distortion compo-nents that are within the measurement equipment’s capabili-ties. This datasheet’s THD+N and IMD values were generat-ed using the above described circuit connected to an Audio Precision System Two Cascade.20210562FIGURE 2. THD+N and IMD Distortion Test Circuit LME49740Application HintsThe LME49740 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable.Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this is to put a resistor in series with the output. This resistor will also pre-vent excess power dissipation if the output is accidentally shorted.Noise Measurement Circuit20210527Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.Total Gain: 115 dB at f = 1 kHzInput Referred Noise Voltage: e n = V O /560,000 (V)RIAA Preamp Voltage Gain,RIAA Deviation vs Frequency V IN = 10mV, A V = 35.0dB, f = 1kHz20210528Flat Amp Voltage Gain vs Frequency V O = 0dB, A V = 80.0dB, f = 1kHz20210529L M E 49740Typical ApplicationsNAB Preamp20210530A V = 34.5F = 1 kHz E n = 0.38 μV A WeightedNAB Preamp Voltage Gain vs FrequencyV IN = 10mV, A V = 34.5dB, f = 1kHz20210531Balanced to Single Ended Converter 20210532V O = V1–V2Adder/Subtracter20210533V O = V1 + V2 − V3 − V4Sine Wave Oscillator20210534LME49740Second Order High Pass Filter(Butterworth)20210535Illustration is f= 1 kHzSecond Order Low Pass Filter(Butterworth)20210536Illustration is f= 1 kHzState Variable Filter20210537LME4974AC/DC Converter202105382 Channel Panning Circuit (Pan Pot)20210539Line Driver20210540Tone Control20210541LME4974020210542RIAA Preamp20210503A v = 35 dB E n = 0.33 μV S/N = 90 dB f = 1 kHz A WeightedA Weighted, V IN = 10 mV @f = 1 kHzL M E 49740Balanced Input Mic Amp20210543Illustration is:V0 = 101(V2 − V1)LME4974010 Band Graphic Equalizer20210544fo (Hz)C 1C 2R 1R 2320.12μF 4.7μF 75k Ω500Ω640.056μF 3.3μF 68k Ω510Ω1250.033μF 1.5μF 62k Ω510Ω2500.015μF 0.82μF 68k Ω470Ω5008200pF 0.39μF 62k Ω470Ω1k 3900pF 0.22μF 68k Ω470Ω2k 2000pF 0.1μF 68k Ω470Ω4k 1100pF 0.056μF 62k Ω470Ω8k 510pF 0.022μF 68k Ω510Ω16k330pF0.012μF51k Ω510ΩNote 10:At volume of change = ±12 dB Q = 1.7 Reference: “AUDIO/RADIO HANDBOOK”, National Semiconductor, 1980, Page 2–61L M E 49740Revision HistoryRev Date Description1.002/28/07Initial WEB release.1.0102/08/08Fixed the captions on the LME4970MA package (from Dual-In-Line to Molded Package (SO).LME49740Physical Dimensions inches (millimeters) unless otherwise notedMolded Package (SO)Order Number LME49740MA NS Package Number M14ADual-In-Line Package Order Number LME49740NA NS Package Number N14AL M E 49740LME49740NotesL M E 49740 Q u a d H i g h P e r f o r m a n c e , H i g h F i d e l i t y A u d i o O p e r a t i o n a l A m p l i f i e rFor more National Semiconductor product information and proven design tools, visit the following Web sites at:ProductsDesign SupportAmplifiers /amplifiers WEBENCH /webench Audio/audio Analog University /AU Clock Conditioners /timing App Notes /appnotes Data Converters /adc Distributors /contacts Displays /displays Green Compliance /quality/green Ethernet /ethernet Packaging/packaging Interface /interface Quality and Reliability /quality LVDS/lvds Reference Designs /refdesigns Power Management /power Feedback /feedback Switching Regulators /switchers LDOs /ldo LED Lighting /led PowerWise/powerwise Serial Digital Interface (SDI)/sdiTemperature Sensors /tempsensors Wireless (PLL/VCO)/wirelessTHE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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Solarproducts2Solar fusesREDindicates NEW information ContentsDescription Page Fuse holder and blockselection guide 2-2Volt F uses Size 600Vdc . . . . . . . . . . .PVM. . . . . 13/32˝ x 1 1/2˝. . . . . . . . . 2-4600Vac /300Vdc . . . .PVCF. . . . .CUBEFuse™. . . . . . . . .. 2-5600Vac/dc. . . . . .. . .PVS-R. . . .RK5. . . . . . . . . . . . . . . . . 2-71000Vdc . . . . . . . .. .PV. . . . . . .10x38mm . . . . . .. . . . . . .2-81000Vdc . . . . . . . .. .HPV. . . . . .10x38mm(in-line assembly). . . . . . . .2-91000/1100Vdc. . . .. .PV. . . . . . .14x51mm . . . . . . . . . . .2-101000Vdc . . . . . . . . . .NH. . . . . . .NH Sizes 1, 2, 3. . . . . . . 2-111000Vdc . . . . . . . . . .XL PV. . . . XL Size 01, 1, 2, 3. . .. . .2-121300/1500Vdc . . . .. .PV. . . . . . .14x65mm. . . . . . . . . . . .2-151200/1500Vdc . . . .. .XL PV. . . . XL Size 01, 1, 2, 3. . . . .2-162Solar fuses Holders and blocks for photovoltaic fuses 600 Volts Fuses Volts Page Midget. . . . . . . . . . . . . .PVM. . . . . . . . . . .600V. . . . . . . . . .2-4CF. . . . . . . . . . . . . . . . .CFPV. . . . . . . . . .600V. . . . . . . . . .2-5RK5. . . . . . . . . . . . . . . .PVS-R . . . . . . . . .600V. . . . . . . . . .2-7Holders •TCFH CUBEFuse holder, panel/DIN-Rail mount . . . . . . . . . . . . .1-16•CHM DIN-Rail mount holders . . . . . . . . . . . . . . . . . . . . . . . . . .9-2•HEB in-line holders. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9-46Blocks •Modular knifeblade fuse blocks 250/600V, panel mount . . . . . . . 9-17•RM600 RK5 open fuse blocks . . . . . . . . . . . . . . . . . . . . . . . . . .9-24•BMM midget open fuse blocks. . . . . . . . . . . . . . . . . . . . . . . . . .9-32BMM HEB TCFHR600Modular knifeblade1000 Volts Fuses Volts Page 10x38mm . . . . . . . . . . .PV-_A10. . . . . . . .1000V . . . . . . . . .2-814x51mm . . . . . . . . . . .PV-_A14. . . . . . . .1000/1100V. . . . .2-10NH Sizes 1, 2 and 3 . . . . PV-_ANH . . . . . . .1000V . . . . . . . . .2-1101XL . . . . . . . . . . . . . . .PV-_A-01XL . . . . .1000V . . . . . . . . .2-121XL . . . . . . . . . . . . . . . .PV-_A-1XL . . . . . .1000V . . . . . . . . .2-122XL . . . . . . . . . . . . . . . .PV-_A-2XL . . . . . .1000V . . . . . . . . .2-123L . . . . . . . . . . . . . . . . .PV-_A-3L . . . . . . .1000V . . . . . . . . .2-12Holders •CHPV 10x38 DIN-Rail mount holders . . . . . . . . . . . . . . . . . . . .9-2•CH14 14x51 DIN-Rail mount holders. . . . . . . . . . . . . . . . . . . . .9-2•HEB* 10x38 in-line holders. . . . . . . . . . . . . . . . . . . . . . . . . . . .9-46•HPV in-line holder assembly. . . . . . . . . . . . . . . . . . . . . . . . . . . .9-46* Self certified to 1000Vdc.Blocks•SB1XL-S 01XL and 1XL blocks . . . . . . . . . . . . . . . . . . . . . . . . .2-12•SB2XL-S 2XL blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-12•SB3L-S 3L blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-12•SD1-D-PV**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-11•SD2-D-PV**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-11•SD3-D-PV**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-11** IEC only to 1000Vdc.CHPV CHM CH14HEB SD1-D-PV SB2XL-S SB3L-S HPVSB1XL-SSolarproducts2Solar fuses Holders and blocks for photovoltaic fuses SB2XL-S SB3L-S 1500 Volts Fuses Volts Page 01XL . . . . . . . . . . .PV-_A-01XL-15 . . . .1500V . . . . . . . . .2-161XL . . . . . . . . . . . .PV-_A-1XL-15 . . . . .1500V . . . . . . . . .2-162XL . . . . . . . . . . . .PV-_A-2XL-15 . . . . .1500V . . . . . . . . .2-163L . . . . . . . . . . . . .PV-_A-3L-15 . . . . . .1500V . . . . . . . . . 2-1614x65mm PV-_A14*. . . . . . . . .1300/1500V. . . . .2-15Blocks•SB1XL-S** 01XL and 1XL blocks . . . . . . . . . . . . . . . . . . . . . .2-16•SB2XL-S** 2XL blocks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-16•SB3L-S** 3L blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-16*Available with tags for bolt mounting or 10mm fixings for mounting in modular blocks for 10mm diameter fuses.** IEC only to 1500Vdc.SB1XL-S2Solar fuses13/32˝ x 1 1/2˝ Midget PV fusesRecommended fuse holders and blocks for the PVM fuse Specifications:Description:fast-acting 600Vdc Midget fuses specificallydesigned to protect solor power systems inextreme ambient temperature, high cyclingand low level fault current conditions (reversecurrent, multi-array fault).Dimensions:13⁄32˝ x 1 1⁄2˝(10.3 x 38.1mm).Ratings:Volts— 600Vdc to UL 2579Amps— 4-30AIR— 50kA DC (4-30A)Agency information:UL Listed 2579, Guide JFGA, FileE335324, CSA Component Certified C22.2. RoHS compliant.Features and benefits:•Specifically designed to protect solar power systems inextreme ambient temperature per UL 2579 listed•Capable of withstanding high cycling and low level faultcurrent conditionsTypical applications:•Solar combiner boxes•Solar string protectorsCatalog numbers (amps)PVM-4PVM-7PVM-10PVM-20PVM-5PVM-8PVM-12PVM-25PVM-6PVM-9PVM-15PVM-30PVMData Sheet: 2153Catalog Amp Power loss (watts)number rating n 1.0 x I nPVM-1010 1.0 1.9PVM-1515 1.0 1.7PVM-3030 1.6 2.9I n= Rated currentPower loss (watts)Dimensions - (mm)11CURRENT IN AMPS.01.1110100AMP5AAAAAA1,TIMEINSECONDSSolar products2Solar fusesPhotovoltaic CUBEFuse™PVCF 600VData Sheet: 2155Carton quantity and weightAmp Carton Weight per cartonrating qty.lbs kgPVCF-35-60A12 1.420.65PVCF-70-100A6 1.740.79Catalog symbol:PVCF_RNFast-acting fuse:6 minutes maximum clearing time at 200%rated current for 30 to 60A fuse8 minutes maximum clearing time at 200%rated current for 70 to 100A fuseRatings:Volts— 600VdcAmps— 35-100AIR— 50kA DC (UL and CSA)Agency information:•UL 2579 Listed Fuse: Guide JFGA, File E335324•CSA Certified Fuse: Class C22.2•RoHS compliantOther ratings/specifications:Watts loss at rated current:PVCF35RN: 5.45WPVCF60RN: 7.27WPVCF100RN: 11.50WOperating and storage temperature range:-40 to 90°CMaterial specifications:• Case: glass filled PES (Polyethersulfone)• Terminals: copper alloy• Terminal plating: electroless tinFeatures and product benefits:•Maximize uptime and reliability using fuses designed and list-Low Voltage Fuses - Fuses for PhotovoltaicSystems.•Minimize chances of equipment failure and personnel injurywhen using full range fuses having the industry’s fastestresponse time to low-magnitude faults.•Maximize return on investment with fuses proven towithstand harsh temperatures.•Minimize design time, operating outage time andchanging enviromental conditions.•Simplify compatibility with readily available industrystandard Class CF holders.•Temperature derating: designed to maximize rated capacity inelevated environmental temperatures.•Overload protection: proven to clear faults faster than the ULrequirement.•Power loss: minimal energy consumption leading to increasedefficiency.Recommended fuse holders for Class CF fuses•2Solar fuses Photovoltaic CUBEFuse™ Data Sheet: 2155 Time-current characteristic curves–average melt 100A60A40A 50A 35A2Solar fusesLimitron™ fast-acting fusesData Sheet: 4203PVS-R(600Vac/dc) Class RK5Recommended fuse holders and blocks for Class RK5 fuses•See page 1-32Solar fuses 10x38mm photovoltaic fuses Description:A range 10x38mm, 1000Vdc PV fuses for the protection and isolation of photovoltaic strings. The fuses arespecifically designed for use in PV systems with extreme ambient temperature, high cycling and low fault current conditions (reverse current, multi-array fault) string arrays.flexibility.Basic fuse size:•10x38mm Catalog symbols:1-20A*—PV-(amp)A10F (cylindrical)—PV-(amp)A10-T (bolt mounting)—PV-(amp)A10-1P (single PCB tab)—PV-(amp)A10-2P (dual PCB tab)—PV-(amp)10F-CT (in-line, crimp terminals)25-30A**—PV10M-(amp) (cylindrical)—PV10M-(amp)-CT (in-line, crimp terminals)*Ceramic tube construction.**Melamine tube construction.Time constant:•1-3ms PV Fuse coordination:With thin film cells and 4”, 5” and 6” crystalline silicon cells Agency information:•UL Listed to 2579*, Guide JFGA, File E335324•IEC 60269-6 (gPV)•CSA File 53787, Class 1422-30 (1-15A), 20-30A Pending •CCC (1-20A) (25-30A pending)•RoHS Compliant *Except crimp terminal version that is UL Recognized to UL 2579, Guide JFGA2, File E335324.Features and benefits:•Meets UL and IEC photovoltaic standards for global acceptance •Low watts loss performance for energy efficiency •Low temperature rise performance for more precise sizing •In-line crimp terminal version is easy to apply in wire harness construction Typical applications:•Combiner boxes •Inverters •PV wire harnesses Recommended fuse blocks, holders and fuseclips:Part number Description Data Sheet #BPVM_10265with optional cover CHPV_Lit # 3185with optional open fuse indication 1A3400-09PCB fuseclip 2131HPV-DV-_AIn-line fuse holder assembly 2157Data Sheet: 1012110x38mm fuses — 1000Vdc, 1-30A Catalog numbers (amp)/electrical characteristics:Rated I 2t (A 2s)Cylindrical Bolt PCB fixing PCB fixing Rated volts Interrupting Pre-Total @Watts loss ferrule fixing single pin double pin crimp terminal amps Vdc rating arcing rated volts 0.8I n I n PV-1A10F PV-1A10-T PV-1A10-1P PV-1A10-2P PV-1A10F-CT 1100050kA 0.150.40.8 1.5PV-2A10F PV-2A10-T PV-2A10-1P PV-2A10-2P PV-2A10F-CT 2100050kA 1.2 3.40.6 1.0PV-3A10F PV-3A10-T PV-3A10-1P PV-3A10-2P PV-3A10F-CT 3100050kA 4110.8 1.3PV-3-5A10F PV-3-5A10-T PV-3-5A10-1P PV-3-5A10-2P PV-3-5A10F-CT 3.5100050kA 6.6180.9 1.4PV-4A10F PV-4A10-T PV-4A10-1P PV-4A10-2P PV-4A10F-CT 4100050kA 9.526 1.0 1.5PV-5A10F PV-5A10-T PV-5A10-1P PV-5A10-2P PV-5A10F-CT 5100050kA 1950 1.0 1.6PV-6A10F PV-6A10-T PV-6A10-1P PV-6A10-2P PV-6A10F-CT 6100050kA 3090 1.1 1.8PV-8A10F PV-8A10-T PV-8A10-1P PV-8A10-2P PV-8A10F-CT 8100050kA 332 1.2 2.1PV-10A10F PV-10A10-T PV-10A10-1P PV-10A10-2P PV-10A10F-CT 10100050kA 770 1.2 2.3PV-12A10F PV-12A10-T PV-12A10-1P PV-12A10-2P PV-12A10F-CT 12100050kA 12120 1.5 2.7PV-15A10F PV-15A10-T PV-15A10-1P PV-15A10-2P PV-15A10F-CT 15100050kA 22220 1.7 2.9PV-20A10F PV-20A10-T PV-20A10-1P PV-20A10-2P PV-20A10F-CT 20100050kA 34350 2.1 3.6PV10M-25————25100020kA 3251860* 1.7 2.9PV10M-30————30100020kA 5363360* 1.7 3.3*Total I 2************************************.Solarproducts2Solar fuses 10x38mm photovoltaic in-line assembly Data Sheet: 2157HPV — 1000Vdc Catalog symbol:HPV-DV-(amp)ADescription:Single-pole, non-serviceable photovoltaic in-line fuse holderand fuse assembly in an IP67 dust tight and temporary water immersion resistant insulating boot for use in photovoltaic wire harnesses.Ratings — 1000Vdc Amps — 1-20AIR — 33kA Agency information • UL Listed to 4248-1 and 4248-18. File # E 348242• CSA Component Acceptance, Class 6225 30, File # 47235• CE, RoHS Compliant, IP20 Finger-safe, IP67Conductors • 75°C/90°C Cu Stranded 12-10AWG PV wire T erminals • Crimp connection for single, stranded 12-10AWG PV conductor Boot material • UL 5VA flammability resistant rated elastomer. • UV resistant to UL F1 suitable for outdoor use.Operating and storage temperature range • -40°C to +90°C PackagingBulk packed in cartons, 180 fuse assemblies per carton. Cartonweight 19.3 Lbs (8.7543kg).Fuse assemblies poly bagged with PV fuse element, two insulating boots (for lineside and loadside), and one pressure to the wire harness.Catalog numbers (amps) and fuse elements*HPV catalog number 10x38mmPV fuse part number Amps HPV-DV-1A PV-1A10F-CT 1HPV-DV-2A PV-2A10F-CT 2HPV-DV-2.5A PV-2.5A10F-CT 2.5HPV-DV-3A PV-3A10F-CT 3HPV-DV-3.5APV-3.5A10F-CT 3.5HPV-DV-4A PV-4A10F-CT 4HPV-DV-5APV-5A10F-CT5HPV-DV-6A PV-6A10F-CT 6HPV-DV-8A PV-8A10F-CT 8HPV-DV-10A PV-10A10F-CT 10HPV-DV-12A PV-12A10F-CT 12HPV-DV-15A PV-15A10F-CT 15HPV-DV-20A PV-20A10F-CT 20* For fuse specifications and derating curves see data sheet no. 10121 at/DatasheetsEle.Recommended tools • Sta-Kon™ terminal crimping tool, catalog # ERG4002• Multi-Contact assembly tool, catalog # PV-RWZ with PV-KOI+II and PV-KOIII tapered spindles2Solar fuses 14x51mm photovoltaic fuses Time-current characteristic curves—average melt Dimensions - mmData Sheet: 720132Available current (amps), DC-time constant 1-3ms Recommended fuse holders and blocks for 14x51mm fuses •See page 2-2Features and benefits:•Specifically designed to provide fast-acting protection under low fault current conditions associated with PV systems •High DC voltage rating •Demonstrated performance in extreme temperature cycling conditions Typical applications:•Combiner boxes •Inverters Recommended fuse holder:CH141B-PV DIN-Rail modular fuse holder See data sheet # 720148 for more information.14x51mm fuses — 1000/1100Vdc, 15-32A2-11Solar products2Solar fusesNH photovoltaic fusesBUSSMANN SERIES FULL LINE CATALOG1007—July 2015 /bussmannseries Description:A range of 1000Vdc NH size Photovoltaic (PV) fusesspecifically designed for protecting and isolating arraycombiners/re-combiners, disconnects and inverters.Ratings:Volts— 1000VdcAmps— 32-400AIR— 50kAAgency information:•UL Listed, Guide JFGA, File E335324.Photovoltaic to UL 2579•IEC 60269-6 gPV•CSA Class 1422-30, File 53787 (32-160A)•UL Listed, IEC gPV, CSA, CCC Pending, RoHS compliantCatalog numbers/electrical characteristics:Data Sheet: 720133Features and benefits:•Compact size saves panel space and extends designflexibility•Bolt-on versions have common hole centers forstandardizing busbar designs across 63-400 amp range•Low power loss for greater efficiency and loweroperating temperature•Global agency standards simplifies designconsiderations for worldwide markets•Dual indication feature and optional microswitchesmake system monitoring easierTypical applications:•Recombiner boxes•InvertersRecommended fuse blocks*:Fuse size Fuse blockNH1SD1-D-PVNH2SD2-D-PVNH3SD3-D-PVSee data sheet # 720149 for more information.Optional microswitches*:Tab size/number mm (inch)Connection Volts Amps170H0236250/6.3 (1⁄4)Quick connect2502170H0238110/2.8 (0.11)Quick connect2502BVL50187/4.8 (3⁄16)Quick connect2506 NH fuses — 1000Vdc, NH1, 2, 3, 32-400A*For use with bladed version.FusesizeCurrentrating(amps)Energy integralsI2t (A2S)Watts lossPart numberPre-arcingT otal at1000V0.8InInPV-32ANH1NH1328072048PV-40ANH1NH140185167059PV-50ANH1NH1504003600611PV-63ANH1NH1634704300612PV-80ANH1NH1806405760815PV-100ANH1NH1100130011,700816PV-125ANH1NH1125260023,400917PV-160ANH1NH1160520046,8001427PV-200ANH1NH120010,20082,0001325PV-250ANH2NH225017,000136,0001938PV-300ANH3NH330032,000260,0002440PV-315ANH3NH331532,000260,0002644PV-350ANH3NH335044,500370,0002745PV-355ANH3NH335544,500370,0002846PV-400ANH3NH340067,500550,0003050Blade without bolt-holesSee data sheet No. 720133 for complete details.Part numberwith bolt holesFusesizeCurrentrating(amps)Energy integralsI2t (A2S)Watts lossPre-arcingT otal at1000V0.8InInPV-63ANH1-B NH1634704300612PV-80ANH1-B NH1806405760815PV-100ANH1-B NH1100130011,700816PV-125ANH1-B NH1125260023,400917PV-160ANH1-B NH1160520046,8001427PV-200ANH1-B NH120010,20082,0001325PV-250ANH2-B NH225017,000136,0001938PV-315ANH3-B NH331532,000260,0002644PV-355ANH3-B NH335538,000310,0002948PV-400ANH3-B NH340061,000490,0003250See data sheet No. 720133 for complete details.Blade with bolt-holesRequest Info2-12BUSSMANN SERIES FULL LINE CATALOG 1007—July 2015 /bussmannseries 2Solar fuses1000Vdc XL photovoltaic fuses Data Sheet: 10201Description:protecting and isolating photovoltaic array combiners and disconnects. These fuses are capable of interrupting low overcurrents associated with faulted PV systems (reverse microswitches for use in monitoring systems.Catalog symbols:Blade — PV-(amp)A(size)XL Bolt-In — PV-(amp)A(size)XL-B Agency information:•UL 2579, Guide JFGA, File E335324•IEC 60269-6•CSA Class 1422-30, File 53787•RoHS Compliant Features and benefits:•Specifically designed to provide fast-acting protection under low fault current conditions associated with PV systems •High DC voltage rating •Variety of mounting options for flexibility •Demonstrated performance in extreme temperature cycling conditions Typical applications:•Recombiner boxes •InvertersRecommended fuse holders:Fuse size Part number Description 01XL SB1XL-S 1-pole block 1XL SB1XL-S 1-pole block 2XL SB2XL-S 1-pole block 3L SB3L-S 1-pole block See data sheet # 10066 for more information.Optional microswitches:Blade — 170H0235 or 170H0237 for size 01XL— 170H0236 or 170H0238 for sizes 1XL, 2XL and 3LBolt-in — 170H0069 for all sizes XL fuses — 1000Vdc, XL01, 1, 2, 3, 63-630A Catalog numbers (amp)/electrical characteristics:Rated I 2t (A 2s)Rated volts Interrupting Total @Watts loss Fuse size Bladed version Bolted version amps Vdc rating Pre-arcing rated volts 0.8I n I n PV-63A-01XL PV-63A-01XL-B 63100050kA 26019001324PV-80A-01XL PV-80A-01XL-B 80100050kA 4903600172901PV-100A-01XL PV-100A-01XL-B 100100050kA 87063001832PV-125A-01XL PV-125A-01XL-B 125100050kA 193013,9002040PV-160A-01XL PV-160A-01XL-B 160100050kA 390028,10022441PV-200A-1XL PV-200A-1XL-B 200100033kA 940027,2603160PV-160A-2XL PV-160A-2XL-B 160100033kA 278021,0002544PV-200A-2XL PV-200A-2XL-B 200100033kA 495037,00028502PV-250A-2XL PV-250A-2XL-B 250100033kA 945070,0003460PV-315A-2XL PV-315A-2XL-B 315100033kA 16,600123,0004066PV-350A-2XL PV-350A-2XL-B 350100033kA 26,000192,0004268PV-355A-2XL PV-355A-2XL-B 355100033kA 26,000192,0004268PV-350A-3L PV-350A-3L-B 350100050kA 31,000161,2004065PV-400A-3L PV-400A-3L-B 400100050kA 44,500231,40048823PV-500A-3L PV-500A-3L-B 500100050kA 85,000442,0005085PV-600A-3L PV-600A-3L-B 600100050kA 137,000712,40080108PV-630A-3L*PV-630A-3L-B*630*100050kA 137,000712,40092118*630A thermally rated to UL only.Request Info2-132Solar fuses1000Vdc XL photovoltaic fuses for solar ap plications BUSSMANN SERIES FUL L LINE CATALOG 1007—July 2015 /bussmannseries 2XL blade sizeDimensions - mm (n ot to scale)3L blade size3L bolt size01XL blade size 01XL bolt sizeData Sheet: 7201342XL bolt size Request Info2-14BUSSMANN SERIES FULL LINE CATALOG 1007—July 2015 /bussmannseries 2Solar fuses 1000Vdc XL photovoltaic fuses for solar applications Data Sheet: 720134100100010000160A 125A 100A 200A 0.010.11100001000100101P r e -a r c i n g T i m e (s )63A 80A Time-current curves for 01XL and 1XL Available current (amps), DC-time constant 1-3ms Time-current curves for 2XLAvailable current (amps), DC-time constant 1-3ms Time-current curves for 3L Available current (amps), DC-time constant 1-3ms2-152Solar fuses 14x65mm photovoltaic fuses BUSSMANN SERIES FULL LINE CATALOG 1007—July 2015 /bussmannseries 14x65mm fuses — 1300/1500Vdc, 2.25-32A Features and benefits:•Specifically designed to provide fast-acting protection under low fault current conditions associated with PV systems •Variety of mounting options for flexibility •Fuses meet UL and IEC photovoltaic standards for global product acceptance Data Sheet: 1172Request Info2-16BUSSMANN SERIES FULL LINE CATALOG 1007—July 2015 /bussmannseries 2Solar fuses 1500Vdc XL photovoltaic fuses Data Sheet: 10201Description:protecting and isolating photovoltaic array combiners and disconnects. These fuses are capable of interrupting low microswitches for use in monitoring systems.Catalog symbols:Blade — PV-(amp)A(size)XL-15Bolt-In — PV-(amp)A(size)XL-B-15Agency information:•UL Listed, Guide JFGA, File E335324. Photovoltaic to UL 2579•IEC 60269-6 gPV •CSA Class 1422-30, File 53787•RoHS compliant Features and benefits:•Specifically designed to provide fast-acting protection PV systems •Variety of mounting options for flexibility Typical applications:•Recombiner boxes •InvertersRecommended fuse holders:Fuse size Part number Description 01XL SB1XL-S 1-pole block 1XL SB1XL-S 1-pole block 2XL SB2XL-S 1-pole block 3L SB3L-S 1-pole block See data sheet # 10066 for more information.Optional microswitches:Blade — 170H0235 or 170H0237 for size 01XL— 170H0236 or 170H0238 for sizes 1XL, 2XL & 3LBolt-in — 170H0069 for all sizes XL PV fuses — 1500Vdc, XL01, 1, 2, 3, 50-400A Catalog numbers (amp)/electrical characteristics:Rated I 2t (A 2s)Rated volts InterruptingTotal @Watts loss Fuse size Bladed version Bolted version amps Vdc rating Pre-arcing rated volts 0.8I n I n PV-50A-01XL-15PV-50A-01XL-B-1550150030kA 7510001425PV-63A-01XL-15PV-63A-01XL-B-1563150030kA 3622250152601PV-80A-01XL-15PV-80A-01XL-B-1580150030kA 56533001935PV-100A-01XL-15PV-100A-01XL-B-151********kA 110066002240PV-125A-01XL-15PV-125A-01XL-B-151********kA 220010,5002342PV-160A-01XL-12PV-160A-01XL-B-12160120030kA 500024,0002652PV-100A-1XL-15PV-100A-1XL-B-151********kA 1250600024431PV-125A-1XL-15PV-125A-1XL-B-151********kA 195093602552PV-160A-1XL-15PV-160A-1XL-B-151********kA 420020,1603058PV-200A-1XL-15PV-200A-1XL-B-152********kA 940045,1203161PV-125A-2XL-15PV-125A-2XL-B-151********kA 220015,00025442PV-160A-2XL-15PV-160A-2XL-B-151********kA 500032,0002948PV-200A-2XL-15PV-200A-2XL-B-152********kA 880051,0003257PV-250A-2XL-15PV-250A-2XL-B-152********kA 16,60085,0004070PV-250A-3L-15PV-250A-3L-B-152********kA 22,30092,00032503PV-315A-3L-15PV-315A-3L-B-153********kA 38,000160,0003666PV-355A-3L-15PV-355A-3L-B-153********kA 44,500184,0004480PV-400A-3L-15PV-400A-3L-B-15400150030kA58,000240,0004991Request Info2-17Solar products2Solar fuses1500Vdc XL photovoltaic fusesBUSSMANN SERIES FULL LINE CATALOG1007—July 2015 /bussmannseriesDimensions - mm (not to scale)Bladed - size 01XL, 1XL, 2XL and 3L1XL blade size1XL bolt size2XL blade size3L blade size3L bolt size01XL blade size01XL bolt sizeData Sheet: 7201342XL bolt sizeRequest Info2-18BUSSMANN SERIES FULL LINE CATALOG1007—July 2015 /bussmannseries2Solar fuses1500Vdc XL photovoltaic fusesData Sheet: 720134Time-current curves for 01XL - 1500VdcAvailable current (amps), DC-time constant 1-3msTime-current curves for 1XL - 1500VdcAvailable current (amps), DC-time constant 1-3ms Time-current curves for 2XL - 1500VdcAvailable current (amps), DC-time constant 1-3msTime-current curves for 3L - 1500VdcAvailable current (amps), DC-time constant 1-3msRequest Info。

FMMT497TC;中文规格书,Datasheet资料

FMMT497SOT23 NPN silicon planar high voltage high performance transistorComplementary part number - FMMT597Device marking - 497Absolute maximum ratingsParameterSymbol Value Unit Collector-base voltage V CBO 300V Collector-emitter voltage V CEO 300V Emitter-base voltageV EBO 5VContinuous collector current I C 500mA Peak pulse current I CM 1A Base currentI B200mA Power dissipation at T amb =25°CP tot 500mW Operating and storage temperature rangeT j :T stg-55 to +150°CElectrical characteristics (at T amb = 25°C unless otherwise stated)ParameterSymbol Min.Typ.Max .Unit Conditions Collector-basebreakdown voltage V (BR)CBO 300V I C = 100␮A Collector-emitter breakdown voltage V CEO(sus)300V I C = 10mA (*)NOTES:(*)Measured under pulsed conditions. Pulse width = 300␮s. Duty cycle Յ2%.Emitter-basebreakdown voltage V (BR)EBO 5V I E = 100␮A Collector cut-off current I CBO 100nA V CB = 250V Collector cut-off current I CES 100nA V CES = 250V Emitter cut-off current I EBO 100nA V EB = 4VCollector-emitter saturation voltage V CE(sat)0.20.3V V I C = 100mA, I B = 10mA I C = 250mA, I B = 25mA Base-emittersaturation voltage V BE(sat) 1.0V I C = 250mA, I B = 25mA Base-emitter turn on voltage V BE(on) 1.0VI C = 250mA, V CE = 10V Static forward current transfer ratioh FE1008020300I C = 1mA, V CE = 10V I C = 100mA, V CE = 10V (*)I C = 250mA, V CE = 10V (*)Transition frequency f T 75MHz I C = 50mA, V CE = 10V f = 100MHz output capacitance C obo 5pF V CB = 10V, f = 1MHz Switching performancetd 53ns V CC = 100V, I C = 100mA, Ib1 = -Ib2 = 10mAtr 126ns ts 2.58␮s tf228nsTypical characteristicsPackage outline - SOT23Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in incheslimeters Inches limeters Inches Min.Max.Min.Max.Min.Max.Max.Max.A - 1.12-0.044e1 1.90 NOM0.075 NOMA10.010.100.00040.004E 2.10 2.640.0830.104b 0.300.500.0120.020E1 1.20 1.400.0470.055C 0.0850.1200.0030.008L 0.250.620.0180.024D 2.803.040.1100.120L10.450.620.0180.024e0.95 NOM 0.0375 NOM-----Intentionally left blankZetex sales offices EuropeZetex GmbHKustermann-park Balanstraße 59D-81541 München GermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@AmericasZetex Inc700 Veterans Memorial Highway Hauppauge, NY 11788USATelephone: (1) 631 360 2222Fax: (1) 631 360 8222usa.sales@Asia PacificZetex (Asia Ltd)3701-04 Metroplaza Tower 1Hing Fong Road, Kwai Fong Hong KongTelephone: (852) 26100 611Fax: (852) 24250 494asia.sales@Corporate HeadquartersZetex Semiconductors plcZetex Technology Park, Chadderton Oldham, OL9 9LL United KingdomTelephone: (44) 161 622 4444Fax: (44) 161 622 4446hq@© 2006 Published by Zetex Semiconductors plcDefinitionsProduct changeZetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders.Applications disclaimerThe circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,opportunity or consequential loss in the use of these circuit applications, under any circumstances.Life supportZetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:A. Life support devices or systems are devices or systems which:1.are intended to implant into the body or2.support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected tocause the failure of the life support device or to affect its safety or effectiveness.ReproductionThe product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and ConditionsAll products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.Quality of productZetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: /salesnetworkZetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.ESD (Electrostatic discharge)Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.Devices suspected of being affected should be replaced.Green complianceZetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions.All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives.Product status key:“Preview”Future device intended for production at some point. Samples may be available “Active”Product status recommended for new designs “Last time buy (LTB)”Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs”Device is still in production to support existing designs and production “Obsolete”Production has been discontinued Datasheet status key:“Draft version”This term denotes a very early datasheet version and contains highly provisional information, whichmay change in any manner without notice.“Provisional version”This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.However, changes to the test conditions and specifications may occur, at any time and without notice.“Issue”This term denotes an issued datasheet containing finalized specifications. H owever, changes tospecifications may occur, at any time and without notice.分销商库存信息: DIODESFMMT497TC。

美隆电子--片阻规格书

CODE MULTIPLIER A 10
0
B 10
1
C 10
2
D 10
3
E 10
4
F 10
5
G 10
6
H 10
7
X 10
-1
Y 10
-2
Z 10-3
Approved William Zhao
Checked Apple Liu
Prepared Ellie Zhang
File NO. ML-01-001
2010 1/2W (3/4WS)
5.00±0.10 +0.15 2.50 -0.10 0.55±0.10 0.60±0.25 0.50±0.20
2512 1W
6.35±0.10 +0.15 3.20 -0.10 0.55±0.10 0.60±0.25 0.50±0.20
L W DIMENSION(MM) H A B RESISTANCE VALUE OF JUMPER JUMPER RATED CURRENT JUMPER RATED MAX OVERLOAD CURRENT MAX WORKING VOLTAGE MAX OVERLOAD VOLTAGE DIELECTRIC WITHSTANDING VOLTAGE ±0.5% ±1% ±2% ±5% OPERATING TEMPERATURE
2701 → 2.7KΩ
10R5 → 10.5Ω
(5) STANDARD E-96 SERIES VALUES (±0.5%、±1% TOLERANCE) OF 0603 SIZE. DUE THE SMALL SIZE OF THE RESISTOR’S BODY, 3 DIGITS MARKING WILL BE USED TO INDICATE THE ACCURATE RESISTANCE VALUE BY USING THE FOLLOWING MULTIPLIER & RESISTANCE CODE. MULTIPLIER CODE:

MB90F497中文资料

FUJITSU SEMICONDUCTORData Sheet (Advance Information)Advance InformationMB90495 Series Data Sheet (Advance Information) 1 / 40FME EMDC June 19, 200016-bit Proprietary MicrocontrollerCMOSF 2MC-16LX MB90495 SeriesMB90497/F4971. OUTLINEThe MB90495-series with FULL-CAN interface and FLASH ROM is especially designed for automotive and industrial applications.Its main feature is the on-chip CAN Interface,which conforms to V2.0Part A and Part B,while supporting a very flexible message buffer scheme, including 8 message buffers, and so offering more functions than a normal full CAN approach.With the new 0.5mm CMOS technology, Fujitsu now also offers on-chip FLASH-ROM program memory. An internal voltage booster removes the necessity for a second programming voltage. An on-chip voltage regulator provides 3V to the internal MCU core. This creates a major advantage in terms of EMI and power consumption.The internal PLL clock frequency multiplier provides an internal 62.5 nsec instruction cycle time from an external 4 MHz clock. A 32kHz Subsystem clock has been included for power saving modes and real time measurement.There are 2 on-chip UART’s, which also provide synchronous communication modes. Furthermore the MCU features an 8 chan-nel ADC, 8 channel External interrupt controller, two 16 bit PPG channels, 4 channel Input Capture Unit and a 16-bit free running I/O-timer.MB90495 Series2. FEATURES•16-bit core CPU; 4MHz external clock (16 MHz internal, 62.5 ns instruction cycle time)•32kHz Subsystem Clock•0.5 mm CMOS Technology•Internal voltage regulator supports 3V MCU core, offering low EMI and low power consump-tion figures•64 KB FLASH ROM; supports automatic programming, 10.000 erase cycles, 10 year data retention time and no second programming voltage required• 2 KB static RAM•FULL-CAN interface;conforming to Version2.0Part A and Part B,flexible message buffering (mailbox and FIFO buffering can be mixed)• 2 UART’s; both offering synchronous communication modes.•Powerful interrupt functions (8 programmable priority levels; 8 external interrupts)•I/O Timer•A/D Converter: 8 channel analogue inputs (Resolution 10 bits or 8 bits)•ICU (Input capture) 16bit * 4ch•PPG (Programmable Pulse Generator) 16bit * 2ch; Can be configured as 8bit * 4ch•Optimised instruction set for controller applications(bit, byte, word and long-word data types; 23 different addressing modes; barrel shift; varietyof pointers)•4-byte instruction execution queue•Signed multiply (16bit*16bit) and divide (32bit/16bit) instructions available•Program Patch Function•Fast Interrupt processing•16-bit reload timer: 2 channels•Low Power Consumption - Several different Lo-Power modes: (Sleep, Stop, Watch,...)•Package:QFP-64; 12mm x 12mm body, 0.65mm pin pitch•QFP-64; 20mm x 18mm body, 1.0mm pin pitchMB90495 Series Data Sheet (Advance Information) 2 / 40FMG EMDC June 19, 2000MB90495 SeriesMB90495 Series Data Sheet (Advance Information) 3 / 40FME EMDC June 19,20003. PRODUCT LINEUPThe following table provides an overview of the MB90495 SeriesFeaturesMB90F497MB90497CPU F2MC-16LX CPUSystem clock On-chip PLL clock multiplier (x1, x2, x3, x4, 1/2 when PLL stop)Minimum instruction execution time: 62.5 ns (4 MHz osc. PLL x4)ROM Boot-blockFlash memory 64 Kbytes Mask ROM 64 Kbytes RAM 2 Kbytes2 KbytesTechnology 0.5 mm CMOS with on-chip voltage regulator for internal power supply + Flash memory On-chip charge pump for programming voltage0.5 mm CMOS with on-chip voltage regulator for internal power supplyOperating voltage range 5 V +/- 10%Temperature range - 40 to 85°C PackageQFP64MB90495 SeriesMB90495 Series Data Sheet (Advance Information) 4 / 40FMG EMDC June 19, 20004. BLOCK DIAGRAMWatch ROM/FlashUART 1Prescaler10-bit ADC8chIO Timer Clock Controller Input Capture 4ch CANExternal Interrupt16bit ReloadTimer 16-bit PPG 2ch16LX CPUF M C -16 B u sX0,X1RSTX X0A, X1ASOT1SCK1SIN1AVCC AVSS AN[7:0]AVR ADTGIN[3:0]PPG[3:0]RX TXINT[7:0]TIN[1:0]TOT[1:0]64KTimer Time Base Timer FRCK RAM 2K 2chPrescalerSCK0SIN0UART 0SOT 0(SCI)(SCI)MB90495 SeriesMB90495 Series Data Sheet (Advance Information)5 / 40FME EMDC June 19,20005. PIN ASSIGNMENTFigure 5.1 FPT-64P-M09Figure 5.2 FPT-64P-M063231302928272625242322212019181749505152535455565758596061626364VSSP30/ALE/SOUT0P31/RDX/SCK0P32/WRLX/SIN0P33/WRHX P34/HRQ P35/HAKXVCC CP36/FRCK/RDY P37/ADTG/CLKP40/SIN1P41/SCK1P42/SOUT1P43/TX P44/RXP07/AD07P06/AD06P05/AD05P04/AD04P03/AD03P02/AD02P01/AD01P00/AD00VSS X1X0MD2MD1RSTX MD0P63/INT3QFP-64FPT-64P-M09P 27/I N T 7/A 23P 26/I N T 6/A 22P 25/I N T 5/A 21P 24/I N T 4/A 20P 23/T O U T 1/A 19P 22/T I N 1/A 18P 21/T O U T 0/A 17P 20/T I N 0/A 16P 17/P P G 3/A D 15P 16/P P G 2/A D 14P 15/P P G 1/A D 13P 14/P P G 0/A D 12P 13/I N 3/A D 11P 12//I N 2/A D 10P 11/I N 1/A D 09P 10/I N 0/A D 08P 61/I N T 1P 62/I N T 2P 50/A N 0P 51/A N 1P 52/A N 2P 53/A N 3P 54/A N 4P 55/A N 5P 56/A N 6P 57/A N 7A V C C A V R A V S S P 60/I N T 0X 0A X 1APackage code (mold)12345678910111213141516484746454443424140393837363534333231302928272625242322212052535455565758596061626364P31/RDX/SCK0P32/WRLX/SIN0P33/WRHX P34/HRQ P35/HAKXVCC CP36/FRCK/RDY P37/ADTG/CLKP40/SIN1P41/SCK1P42/SOUT1P43/TX P06/AD06P05/AD05P04/AD04P03/AD03P02/AD02P01/AD01P00/AD00VSS X1X0MD2MD1RSTXQFP-64FPT-64P-M06P 30/A L E /S O U T 0V S S P 27/I N T 7/A 23P 26/I N T 6/A 22P 25/I N T 5/A 21P 24/I N T 4/A 20P 23/T O U T 1/A 19P 22/T I N 1/A 18P 21/T O U T 0/A 17P 20/T I N 0/A 16P 17/P P G 3/A D 15P 16/P P G 2/A D 14P 15/P P G 1/A D 13P 14/P P G 0/A D 12P 13/I N 3/A D 11P 12//I N 2/A D 10P 11/I N 1/A D 09P 10/I N 0/A D 08P 07/A D 07P 44/R XP 61/I N T 1P 62/I N T 2P 50/A N 0P 51/A N 1P 52/A N 2P 53/A N 3P 54/A N 4P 55/A N 5P 56/A N 6P 57/A N 7A V C C A V R A V S S P 60/I N T 0X 0A X 1AP 63/I N T 3M D 0Package code (mold)1234567891011121314151617181951504948474645444342414039383736353433MB90495 SeriesMB90495 Series Data Sheet (Advance Information) 6 / 40FMG EMDC June 19, 20006. PIN DESCRIPTION6.1 Pin FunctionPin No.Pin Name Circuit Type Active Level at RST Priority FunctionM06M0921P61D H CMOS/TTL High-Z Port General pupose IOINT1External Interrupt input 132P62D H CMOS/TTL High-Z Port General pupose IO INT2External interrupt 24 to 11 3 to 10P50 to P57EHCMOSHigh-ZPortGeneral pupose IOAN0 to AN7Inputs for A/D Converter1211AVCC Dedicated power supply for A/D Con-verter1312AVR Reference Volgate inupt for A/D Con-verter1413AVSS Dedicated power ground for A/D Con-verter1514P60D HCMOS/TTLHigh-ZPortGeneral pupose IOINT0External interrupt input 01615X0A A Low frequency oscillation input 1716X1A A Low frequency oscillation output 1817P63D H CMOS/TTL High-ZPortGeneral purpose IO INT3External interrupt 31918MD0C H CMOS Mode input 2019RSTX B L CMOS Reset input 2120MD1C H CMOS Mode input 2221MD2F HCMOSMode input2322X0A High frequency oscillation input 2423X1AHigh frequency oscillation output 2524VSSPower ground26 to 3325 to 32P00 to P07GHCMOS/TTL High-ZPortGeneral purpose IO AD00 to AD07Addresss Data Bus 34 to 3733 to 36P10 to P13G H CMOS/TTLHigh-Z PortGeneral pupose IOIN0 to IN3Inputs for Input Captures AD08 to AD11Address Data Bus 38 to 4137 to 40P14 to P17G HCMOS/TTLHigh-Z PortGeneral pupose IOPPG0 to PPG3Outputs for Programable Pulse Gener-atorsAD12 to AD15Address Data Bus 4241P20G HCMOS/TTL High-Z PortGeneral pupose IOTIN0Input for 16-bit Reload Timer 0A16Address Bus4342P21G H CMOS/TTL High-Z PortGeneral pupose IOTOT0Output for 16-bit Reload Timer 0A17Address Bus4443P22G H CMOS/TTLHigh-Z PortGeneral pupose IOTIN1Input for 16-bit Reload Timer 1A18Address BusMB90495 SeriesMB90495 Series Data Sheet (Advance Information)7 / 40FME EMDC June 19,20004544P23G HCMOS/TTL High-Z PortGeneral pupose IOTOT1Output for 16-bit Reload Timer 1A19Address Bus46 to 4945 to 48P24 to P25G H CMOS/TTLHigh-Z PortGeneral pupose IOINT4 to INT 7Inputs for External Interrupt A20 to A23Address Bus 5049VSS Ground5150P30G HCMOS/TTL High-Z PortGeneral pupose IO SOT0Output for UART 0ALE Address Latch Enable output 5251P31G H CMOS/TTL High-Z PortGeneral pupose IOSCK0Input/Output for UART 0RDX Read Enable output 5352P32G H CMOS/TTL High-Z PortGeneral pupose IO SIN0Input for UART 0WRLX Write Enable Low-byte output 5453P33G H CMOS/TTL High-Z Port General pupose IOWRHX Write Enable High-byte output 5554P34G H CMOS/TTL High-Z Port General pupose IO HRQ Halt Request input 5655P35GHCMOS/TTLHigh-ZPortGeneral pupose IOHAKX Halt Acknowledge output 5756VCC Power supply5857C Pin for capacitor for the internal power supply.5958P36G HCMOS/TTLHigh-Z PortGeneral pupose IO FRCK Inupt for IO Timer RDY Ready input6059P37D H CMOS High-Z PortGeneral pupose IOADTG Trigger inupt for A/D Converter CLK Clock output6160P40G H CMOS/TTL High-Z Port General pupose IO SIN1Input for UART 16261P41G H CMOS/TTL High-Z Port General pupose IOSCK1Input/Output for UART 16362P42G H CMOS/TTL High-Z Port General pupose IO SOT1Output for UART 16463P43G H CMOS/TTL High-Z Port General pupose IO Tx CAN Transmit pin 164P44GHCMOS/TTLHigh-ZPortGeneral pupose IO RxCAN receive pinPin No.Pin Name Circuit TypeActive Level at RST Priority FunctionM06M09MB90495 SeriesMB90495 Series Data Sheet (Advance Information)8 / 40FMG EMDC June 19, 20006.2 I/O Circuit TypesCircuitDrawing CommentABCDEFG1010011010101Standby Control SignalX1AX0X0AX10000111101HYS1HYS010101001101HYSStandby Control Signal0000111101010101010011011HYSStandby Control SignalAnalog 0000111101HYS01010100110100001111010101HYSStandby Control Signal TTLMB90495 Series7. HANDLING DEVICES(1)Preventing latch-upCMOS IC chips may suffer latch-up under the following conditions:A voltage higher than Vcc or lower than Vss is applied to an input or output pin.A voltage higher than the rated voltage is applied between Vcc and Vss.The AVcc power supply is applied before the Vcc voltage.Latch-up may increase the power supply current drastically, causing thermal damage to thedevice.(2)Handling unused input pinsDo not leave unused input pins open, as doing so may cause misoperation of the device. Use apull-up or pull-down resistor.(3)Using external clockTo use external clock, drive the X0 and X1 pins in reverse phase.Below is a diagram of how to use external clock.MB90495 SeriesX0X1Figure 7.1 Using external clock(4)Power supply pins (Vcc/Vss)Ensure that all Vcc-level power supply pins are at the same potential.In addition,ensure the same for all Vss-level power supply pins. (See the figure below.) If there are more than one Vcc or Vsssystem,the device may operate incorrectly even within the guaranteed operating range.Note that this product may not have as many power pins as pictured in the figure.MB90495 Series Data Sheet (Advance Information)9 / 40FME EMDC June19,2000MB90495 SeriesMB90495 Series Data Sheet (Advance Information)10 / 40FMG EMDC June 19, 2000Figure 7.2 Power pin connections(5) Pull-up/down resistorsThe MB90495 Series does not support internal pull-up/down resistors. Use external components where needed.Vcc VssVss VccVssVcc MB90495SeriesVcc VssVccVssMB90495 Series Data Sheet (Advance Information)11 / 40FME EMDC June 19,20008. ADDRESS SPACEMB90V495MB90F497MB90497FFFFFFHROM FFFLASH ROM FFROM FFFF0000H FEFFFFHROM FENo AcessFE0000H FDFFFFHROM FDExternal bus access External bus accessFD0000H FCFFFFHROM FCFC0000H FBFFFFHROM FBFB0000H FAFFFFHROM FAFA0000H 010000H 00FFFFHFF ROM mirrorFF ROM mirrorFF ROM mirror004000H 003FFFH Extended I/O Extended I/O Extended I/O003800HExternal bus access External bus access0018FFH RAM0010FFH RAM mirror 1Do not use1.The RAM contents of 0000H -08FF H is mirrored to 0900H -10FF H .The RAM mirror area should not be accessed for proper operation.RAM mirror Do not use.000900H 0008FFH RAM RAM000100H 0000BFH I/O I/O I/O000000H9. REGISTER MAPAddress Register Abbreviation Peripheral Access Initial value00 H Port 0 data register PDR0Port 0R/W XXXXXXXX01 H Port 1 data register PDR1Port 1R/W XXXXXXXX02 H Port 2 data register PDR2Port 2R/W XXXXXXXX03 H Port 3 data register PDR3Port 3R/W XXXXXXXX04 H Port 4 data register PDR4Port 4R/W XXXXXXXX05 H Port 5 data register PDR5Port 5R/W XXXXXXXX06 H Port 6 data register PDR6Port 6R/W XXXXXXXX07-0F H Reserved10 H Port 0 direction register DDR0Port 0R/W0000000011 H Port 1 direction register DDR1Port 1R/W0000000012 H Port 2 direction register DDR2Port 2R/W0000000013 H Port 3 direction register DDR3Port 3R/W0000000014 H Port 4 direction register DDR4Port 4R/W0000000015 H Port 5 direction register DDR5Port 5R/W0000000016 H Port 6 direction register DDR6Port 6R/W0000000017-1A H Reserved1B H Analog Input Enable ADER Port 5, A/D R/W11111111 1C - 1F H Reserved20 H Serial Mode Register 1SMR0UART0R/W0000000021 H Serial Control Register 1SCR0R/W0000010022 H Input/Output Data Register 1SIDR0/SODR0R/W XXXXXXXX23 H Serial Status Register 1SSR0R/W00001_0024 H UART 0 Prescaler Control Register CDCR0R/W0___111125 H UART 0 edge select SES0R/W_______126 H Serial Mode Control Register 1SMC1UART1R/W00XXXX0027 H Serial Control Register SRC1R/W00000X0028 H Input/Output Data Register 1SIDR1/SODR1R/W XXXXXXXX29 H Serial Status Register 1SMC1R/W XXXXX000 2A H Reserved2B H UART 1 Prescaler Control Register CDCR0Prescaler UART 1R/W0___0000 2C - 2F H Reserved30 H External Interrupt Enable ENIRExternal Interrupt R/W0000000031 H External Interrupt Request EIRR R/W XXXXXXXX32 H External Interrupt Level ELVR R/W0000000033 H External Interrupt Level ELVR R/W0000000034 H A/D Control Status 0ADCS0A/D Converter R/W0000000034 H A/D Control Status 1ADCS1R/W0000010036 H A/D Data 0ADCR0R XXXXXXXX37 H A/D Data 1ADCR1R/W00000_XX 38-3FH Reserved40 H PPG0 operation mode control register PPGC016-bit Programable PulseGenerator 0/1R/W0_00X__141 H PPG1 operation mode control register PPGC1R/W0_00X00142 H PPG0 and PPG1 clock select register PPG01R/W000000__MB90495 Series Data Sheet (Advance Information)12 / 40FMG EMDC June 19, 200043 H Reserved44 H PPG2 operation mode control register PPGC216-bit Programable PulseGenerator 2/3R/W0_00X__145 H PPG3 operation mode control register PPGC3R/W0_00X00146 H PPG2 and PPG3 clock select register PPG23R/W000000__ 47-4FH Reserved50 H Input Capture 0IPCP0Input Captue 0/1R XXXXXXXX51 H Input Capture 0IPCP0R XXXXXXXX52 H Input Capture 1IPCP1R XXXXXXXX53 H Input Capture 1IPCP1R XXXXXXXX54 H Input Capture Control Status 0/1ICS01Input Capture 0/1/2/3R/W XX00000055 H Input Capture Control Status 2/3ICS23R/W XX00000056 H Timer Data TCDTI/O Timer R/W0000000057 H Timer Data TCDT R/W0000000058 H Timer Control TCCS R/W0000000059 H Timer Control TCCS R/W0__000005A H Input Capture 2IPCP2Input Captue 2/3R XXXXXXXX5B H Input Capture 2IPCP2R XXXXXXXX 5C H Input Capture 3IPCP3R XXXXXXXX 5D H Input Capture 3IPCP3R XXXXXXXX 5E - 65 H Reserved66 H Timer Control Status 0TMCSR016-bit Reload Timer 0R/W00000X0067 H Timer Control Status 0TMCSR0R/W____000068 H Timer Control Status 1TMCSR116-bit Reload Timer 1R/W00000X0069 H Timer Control Status 1TMCSR1R/W____0000 6A - 6E H Reserved6F H ROM Mirror ROMM ROM Mirror R/W000____1 70-7F H Reserved80-8F H Reserved for CAN 1 Interface . Refer to “CAN Controller”90-9D H Reserved9E H ROM Correction Control Status PACSR ROM Correction R/W11000000 9F H Delayed Interrupt/release DIRR Delayed Interrupt R/W_______0 A0 H Low-power Mode LPMCR Low Power Controller R/W00011000 A1 H Clock Selector CKSCR Low Power Controller R/W11111100 A2-A4 H ReservedA5 H Automatic ready function select reg.ARSR W Exter-nalMem-oryAccess 0011__00A6 H External address output control reg.HACR W00000000A7 H Bus control signal select register ECSR W0000000_A8 H Watchdog Control WDTC Watchdog Timer R/W XXXXX111 A9 H Time Base Timer Control TBTC Time Base Timer R/W1__0X100 AA-AD H ReservedAE HFlash Control Status(Flash only, otherwise reserved)FMCS Flash Memory R/W000X0000AF H ReservedAddress Register Abbreviation Peripheral Access Initial valueMB90495 Series Data Sheet (Advance Information)13 / 40FME EMDC June19,2000B0 H Interrupt control register 00ICR00Interrupt controller R/W11000111B1 H Interrupt control register 01ICR01R/W11000111 B2 H Interrupt control register 02ICR02R/W11000111 B3 H Interrupt control register 03ICR03R/W11000111 B4 H Interrupt control register 04ICR04R/W11000111 B5 H Interrupt control register 05ICR05R/W11000111 B6 H Interrupt control register 06ICR06R/W11000111 B7 H Interrupt control register 07ICR07R/W11000111 B8 H Interrupt control register 08ICR08R/W11000111 B9 H Interrupt control register 09ICR09R/W11000111 BA H Interrupt control register 10ICR10R/W11000111 BB H Interrupt control register 11ICR11R/W11000111 BC H Interrupt control register 12ICR12R/W11000111 BD H Interrupt control register 13ICR13R/W11000111 BE H Interrupt control register 14ICR14R/W11000111 BF H Interrupt control register 15ICR15R/W11000111 CO-FF H Reserved1FF0H-1FF5HROM correction3900 H Timer 0/Reload 0TMR0/TMRL016-bit Reload Timer 0R/W XXXXXXXX3901 H Timer 0/Reload 0TMR0/TMRL0R/W XXXXXXXX3902 H Timer 1/Reload 1TMR1/TMRL116-bit Reload Timer 1R/W XXXXXXXX3903 H Timer 1/Reload 1TMR1/TMRL1R/W XXXXXXXX 3904-390FH Reserved3910 H PPG0 Reload L PRLL016-bit Programable PulseGenerator 0/1R/W XXXXXXXX3911 H PPG0 Reload H PRLH0R/W XXXXXXXX 3912 H PPG1 Reload L PRLL1R/W XXXXXXXX 3913 H PPG1 Reload H PRLH1R/W XXXXXXXX3914 H PPG2 Reload L PRLL216-bit Programable PulseGenerator 2/3R/W XXXXXXXX3915 H PPG2 Reload H PRLH2R/W XXXXXXXX3916 H PPG3 Reload L PRLL3R/W XXXXXXXX3917 H PPG3 Reload H PRLH3R/W XXXXXXXX 3918-392FH Reserved3930-3BFFH Reserved3C00-3CFFHReserved for CAN 1 Interface. Refer to “CAN Controller”3D00-3DFFHReserved for CAN 1 Interface. Refer to “CAN Controller”3E00-3EFFH Reserved3FF0-3FFFH ReservedAddress Register Abbreviation Peripheral Access Initial valueMB90495 Series Data Sheet (Advance Information)14 / 40FMG EMDC June 19, 200010. CAN CONTROLLERThe CAN controller has the following features:•Conforms to CAN Specification Version 2.0 Part A and B- Supports transmission/reception in standard frame and extended frame formats •Supports transmitting of data frames by receiving remote frames•8 transmitting/receiving message buffers- 29-bit ID and 8-byte data- Multi-level message buffer configuration•Provides full-bit comparison,full-bit mask,acceptance register0/acceptance register1for each message buffer as 1D acceptance mask- Two acceptance mask registers in either standard frame format or extended frame formats •Bit rate programmable from 10 Kbits/s to 2 Mbits/s (when input clock is at 16 MHz)MB90495 Series Data Sheet (Advance Information)15 / 40FME EMDC June19,200010.1 List of Control RegistersAddress Register Abbreviation Access Initial Value 000080H Message buffer valid register BVALR R/W00000000 000081H Unused000082H Transmit request register TREQR R/W00000000 000083H Unused000084H Transmit cancel register TCANR W00000000 000085H Unused000086H Transmit complete register TCR R/W00000000 000087H Unused000088H Receive complete register RCR R/W00000000 000089H Unused00008AH Remote request receiving register RRTRR R/W00000000 00008BH Unused00008CH Receive overrun register ROVRR R/W00000000 00008DH Unused00008EH Receive interrupt enable register RIER R/W00000000 00008FH Unused003D00HControl status register CSR R/W, R00---000 0----0-1 003D01H003D02HLast event indicator register LEIR R/W-------- 000-0000 003D03H003D04HReceive/transmit error counter RTEC R00000000 00000000 003D05H003D06HBit timing register BTR R/W-1111111 11111111 003D07H003D08H IDE register IDER R/W XXXXXXXX 003D09H Unused003D0AH Transmit RTR register TRTRR R/W00000000 003D0BH Unused003D0CH Remote frame receive waiting register RFWTR R/W XXXXXXXX 003D0DH Unused003D0EH Transmit interrupt enable register TIER R/W00000000 003D0FH Unused003D10HAcceptance mask select register AMSR R/W XXXXXXXX XXXXXXXX 003D11H003D12HUnused003D13H003D14HAcceptance mask register 0AMR0R/W XXXXXXXX XXXXXXXX003D15H003D16HXXXXX--- XXXXXXXX 003D17H003D18HAcceptance mask register 1AMR1R/W XXXXXXXX XXXXXXXX003D19H003D1AHXXXXX--- XXXXXXXX 003D1BHMB90495 Series Data Sheet (Advance Information)16 / 40FMG EMDC June 19, 200010.2 List of Message Buffers (ID Registers)Address Register Abbreviation Access Initial Value 003C00Hto 003C0FH General-purpose RAM--R/WXXXXXXXXtoXXXXXXXX003C10HID register 0IDR0R/W XXXXXXXX XXXXXXXX003C11H003C12HXXXXX--- XXXXXXXX 003C13H003C14HID register 1IDR1R/W XXXXXXXX XXXXXXXX003C15H003C16HXXXXX--- XXXXXXXX 003C17H003C18HID register 2IDR2R/W XXXXXXXX XXXXXXXX003C19H003C1AHXXXXX--- XXXXXXXX 003C1BH003C1CHID register 3IDR3R/W XXXXXXXX XXXXXXXX003C1DH003C1EHXXXXX--- XXXXXXXX 003C1FH003C20HID register 4IDR4R/W XXXXXXXX XXXXXXXX003C21H003C22HXXXXX--- XXXXXXXX 003C23H003C24HID register 5IDR5R/W XXXXXXXX XXXXXXXX003C25H003C26HXXXXX--- XXXXXXXX 003C27H003C28HID register 6IDR6R/W XXXXXXXX XXXXXXXX003C29H003C2AHXXXXX--- XXXXXXXX 003C2BH003C2CHID register 7IDR7R/W XXXXXXXX XXXXXXXX003C2DH003C2EHXXXXX--- XXXXXXXX 003C2FHMB90495 Series Data Sheet (Advance Information)17 / 40FME EMDC June19,200010.3 List of Message Buffers (DLC Registers and Data Registers)Address Register Abbreviation Access Initial Value 003C30HDLC register 0DLCR0R/W----XXXX 003C31H003C32HDLC register 1DLCR1R/W----XXXX 003C33H003C34HDLC register 2DLCR2R/W----XXXX 003C35H003C36HDLC register 3DLCR3R/W----XXXX 003C37H003C38HDLC register 4DLCR4R/W----XXXX 003C39H003C3AHDLC register 5DLCR5R/W----XXXX 003C3BH003C3CHDLC register 6DLCR6R/W----XXXX 003C3DH003C3EHDLC register 7DLCR7R/W----XXXX 003C3FH003C40Hto 003C47H Data register 0 (8bytes)DTR0R/WXXXXXXXXtoXXXXXXXX003C48Hto 003C4FH Data register 1 (8bytes)DTR1R/WXXXXXXXXtoXXXXXXXX003C50Hto 003C57H Data register 2 (8bytes)DTR2R/WXXXXXXXXtoXXXXXXXX003C58Hto 003C5FH Data register 3 (8bytes)DTR3R/WXXXXXXXXtoXXXXXXXX003C60Hto 003C67H Data register 4 (8bytes)DTR4R/WXXXXXXXXtoXXXXXXXX003C68Hto 003C6FH Data register 5 (8bytes)DTR5R/WXXXXXXXXtoXXXXXXXX003C70Hto 003C77H Data register 6 (8bytes)DTR6R/WXXXXXXXXtoXXXXXXXX003C78Hto 003C7FH Data register 7 (8bytes)DTR7R/WXXXXXXXXtoXXXXXXXXMB90495 Series Data Sheet (Advance Information)18 / 40FMG EMDC June 19, 200011. INTERRUPTSInterrupt cause DMA Ch.Interrupt vector Interrupt control register Number Address Number AddressReset——# 08FFFFDCH————INT9 instruction——# 09FFFFD8H————Exception——# 10FFFFD4H————CAN RX——# 11FFFFD0HICR000000B0H CAN TX/NS——# 12FFFFCCHReserved——# 13FFFFC8HICR010000B1H Reserved——# 14FFFFC4HExternal Interrupt INT0/INT1——# 15FFFFC0HICR020000B2H Time Base Timer——# 16FFFFBCH16-bit Reload Timer 0——# 17FFFFB8HICR030000B3H A/D Converter——# 18FFFFB4HI/O Timer——# 19FFFFB0HICR040000B4H External Interrupt INT2/INT3——# 20FFFFACHReserved——# 21FFFFA8HICR050000B5H PPG 0/1——# 22FFFFA4HInput Capture 0——# 23FFFFA0HICR060000B6H External Interrupt INT4/INT5——# 24FFFF9CHInput Capture 1——# 25FFFF98HICR070000B7H PPG 2/3——# 26FFFF94HExternal Interrupt INT6/INT7——# 27FFFF90HICR080000B8H Watch Timer——# 28FFFF8CHReserved——# 29FFFF88HICR090000B9H Input Capture 2/3——# 30FFFF84HReserved——# 31FFFF80HICR100000BAH Reserved——# 32FFFF7CHReserved——# 33FFFF78HICR110000BBH Reserved——# 34FFFF74HReserved——# 35FFFF70HICR120000BCH 16-bit Reload Timer 1——# 36FFFF6CHUART 0 RX——# 37FFFF68HICR130000BDH UART 0 TX——# 38FFFF64HUART 1 RX——# 39FFFF60HICR140000BEH UART 1 TX——# 40FFFF5CHFlash Memory——# 41FFFF58HICR150000BFH Delayed interrupt——# 42FFFF54HMB90495 Series Data Sheet (Advance Information)19 / 40FME EMDC June19,2000MB90495 Series Data Sheet (Advance Information)20 / 40FMG EMDC June 19, 200012. ELECTRICAL CHARACTERISTICS12.1 Absolute Maximum Ratings(V SS = AV SS = 0 V)*1:Set AV CC and V CC to the same voltage.Make sure that AV CC does not exceed V CC and that the voltage at the analog inputs doesnot exceed AV CC when the power is switched on.*2:V I and V O should not exceed V CC +0.3V.VI should not exceed the specified ratings.However if the maximun current to/from ainput is limited by some means with external components, the II rating supercedes the VI rating.ParameterSymbol Rated Value Units RemarksMin.Max.Power supply voltageV CCV SS – 0.3V SS + 6.0V AV CC V SS – 0.3V SS + 6.0V V CC = AV CC*1AVRV SS – 0.3V SS + 6.0V AV CC AVR AVssInput voltage V I V SS – 0.3V SS + 6.0V *2Output voltageV O V SS – 0.3V SS + 6.0V *2"L" level max. output current I OL —15mA "L" level avg. output current I OLAV —4mA Average value over a period of 100ms "L" level max. overall output current I OL —100mA "L" level avg. overall output current I OLAV —50mA Average value over a period of 100ms "H" level max. output current I OH —–15mA "H" level avg. output current I OHAV —–4mA Average value over a period of 100ms "H"level max.overall output current I OH —-100mA "H" level avg. overall output current I OHAV —-50mA Average value over a period of 100ms Power consumption P D —300mW Operating temperature T A –40+85°C Storage temperatureT STG–55+150°CMB90495 Series Data Sheet (Advance Information)21 / 40FME EMDC June 19,200012.2 Recommended Conditions(V SS = AV SS = 0 V)Figure 12.1 C-Pin Connection DiagramParameterSym-bol Rated ValueUnit s RemarksMin.Typ.Max.Power supply voltageV CC AV CC 4.5 5.05.5V Normal operating conditions 3.0 5.5V Maintains RAM data in stop mode.Input H voltageV IHS0.8 V CCV CC + 0.3VCMOS hysteresis input pinV IHM V CC – 0.3V CC + 0.3V MD input pinInput L voltageV ILSV SS – 0.30.2 V CCVCMOS hysteresis input pinV ILMV SS – 0.3V SS + 0.3VMD input pinSmooth capacitor C S 0.0220.1 1.0µFUse a ceramic capacitor or capacitor of better AC characteristics. Capacitor at the VCC should be greater than this capacitor.Operating temperature T A –40+85°CCC S。

Infineon L4979D 自动汽车低谐波电压调节器数据表说明书

This is information on a product in full production.September 2018DS3717 Rev 111/22L4979D, L4979MDAutomotive low dropout voltage regulatorDatasheet - production dataFeatures∙AEC-Q100 qualified∙Operating DC supply voltage range 5.6 V to 31 V ∙Low quiescent current (6 µA typ. @ 25 °C with enable low) ∙High precision output voltage (+/-2%) ∙Low dropout voltage less than 0.5 V∙Reset circuit sensing the output voltage down to 1 V ∙Programmable reset pulse delay with external capacitor ∙Watchdog∙Programmable watchdog timer with external capacitor ∙Thermal shutdown and short circuit protection ∙Automotive temperature range (T j = -40 °C to 150 °C)∙Enable input for enabling/disabling the voltage regulator outputDescriptionL4979D and L4979MD are low dropout linear regulators with microprocessor control functions such as low voltage reset, watchdog, on/off control. Typical quiescent current is 100 µA invery low output current mode and enabled regulator. The devices drop to 6 µA with not enabled regulators.On chip trimming results in high output voltage accuracy (+/-2%). Accuracy is kept over wide temperature range, line and load variation.The maximum input voltage is 40 V. The max output current is internally limited. Internal temperature protection disables the voltage regulator output.Table 1. Device summaryPackageOrder codesTubeTape and reel SO-8L4979D L4979D013TR SO-20L4979MDL4979MD013TRContents L4979D, L4979MDContents1Block diagram and pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.1Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113.1Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113.2Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .113.3Watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134.1SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134.2SO-20 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185.1ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185.2SO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185.3SO-20 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212/22DS3717 Rev 11L4979D, L4979MD List of tables List of tablesTable 1.Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2.Pin function. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 3.Absolute maximum ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4.Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 5.General. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 6.Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 7.Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 8.Watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 9.Enable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10.Reset time diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 11.SO-8 thermal parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 12.SO-20 thermal parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Table 13.SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 14.SO-20 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 15.Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21DS3717 Rev 113/22List of figures L4979D, L4979MD List of figuresFigure 1.Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 2.Pins connection (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3.Behavior of output current versus regulated voltage V o. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 4.Watchdog time diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 5.SO-8 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 6.Rthj-amb vs PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . . . . . . . 13 Figure 7.SO-8 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 8.Thermal fitting model of V reg in SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Figure 9.SO-20 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 10.Rthj-amb vs PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . . . . . . . 16 Figure 11.SO-20 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 12.Thermal fitting model of V reg in SO-20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 13.SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 14.SO-20 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4/22DS3717 Rev 11DS3717 Rev 115/22L4979D, L4979MD Block diagram and pin descriptions1 Block diagram and pin descriptionsTable 2. Pin functionSO8 pin number SO20 pin numberPin nameFunction1 1 En Enable input If high, regulator, watchdog and reset areoperating. If low, regulator, watchdog and reset are shutdown. 2 4 gnd Ground reference5,6,15,16 gndGround. These pins are to be connected to a heatspreader electrically grounded3 7 ResReset output. It is pulled down when output voltagedrops below V o_th or frequency at W i is too low. 4 10 VcrReset timing adjust a capacitor between Vcr pin andgnd sets the reset delay time (t rd ) 5 11 VcwWatchdog timer adjust a capacitor between V cw pin andgnd sets the time response of the watchdog monitor. 6 14 WiWatchdog input. If the frequency at this input pin is toolow, the Reset output is activated. 7 17 VoVoltage regulator output Output capacitor >100 nF isneeded for regulator stabilityBlock diagram and pin descriptionsL4979D, L4979MD6/22DS3717 Rev 118 20 VsSupply voltage Supply capacitor (e.g. 200 nF) is neededfor regulator stability.2, 3, 8, 9, 12, 13, 18,19N. C.Not connectedTable 2. Pin function (continued)SO8 pin number SO20 pin numberPin nameFunctionDS3717 Rev 117/22L4979D, L4979MD Electrical specifications2 Electrical specifications2.1Absolute maximum ratingsStressing the device above the ratings listed in Table 3 may cause permanent damage tothe device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to the conditions reported in this section for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality documents.Table 3. Absolute maximum ratingsSymbol Parameter Value Unit V vsdc DC supply voltage -0.3 to 40 VI vsdc Input current Internally limited V vo DC output voltage -0.3 to 6 (1)ing the typical application schematic with Cout= 10 µF and Iout=0 A, when the regulator is switched-on,an overshoot exceeding 6 V could occur.This behavior does not impact the reliability of the regulator.V I vo DC output current Internally limited V wi Watchdog input voltage-0.3 to V vo +0.3 V V od Open drain output voltage (RES) -0.3 to V vo +0.3V I od Open drain output current (RES) Internally limited V cr Reset delay voltage -0.3 to V vo +0.3 V V cw Watchdog delay voltage -0.3 to V vo +0.3 V V en Enable input voltage -0.3 to 40 V T j Junction temperature-40 to 150°C V ESDESD voltage level (HBM-MIL STD 883C)±2kV Table 4. Thermal dataSymbol Parameter SO8 SO16+2+2 Unit R th j-ambThermal resistance junction to ambient130 to 18050 to 80°C/WElectrical specifications L4979D, L4979MD8/22DS3717 Rev 112.2 Electrical characteristicsV s = 5.6 V to 31 V; T j = -40 °C to 150 °C, unless otherwise specified.Table 5. GeneralPin SymbolParameterTest condition Min. Typ. Max. UnitV s , V o I qQuiescent currentV s = 13.5 V, I o = 150 mA,enable high all I/O currents = 0 1.5 3 mAV s , V o I qQuiescent current V s = 13.5 V, I o = 0 mA, enable high all I/O currents = 0 100 200 µAV s , V o I q Quiescent current V s = 13.5 V, I o = 0 mA, enable low all I/O currents = 06 20 µAT w Thermal protectiontemperature 150 190 °CT w_hyThermal protection temperature hysteresis10 °CTable 6. Voltage regulatorPin Symbol ParameterTest condition Min. Typ. Max. Unit V o V o_ref Output voltage V s = 5.6 to 31 V;I o = 1 to 150 mA 4.90 5.00 5.10 V V o I short Output short circuitcurrent (1)1.See Figure 3: Behavior of output current versus regulated voltage Vo .V s = 13.5 V 150 280 400 mA V o I lim Output current limitation (1)V s = 13.5 V 150320500mAV s , V o V line Line regulation voltageV s = 5.6 to 31 V I o = 1 to 150 mA 25 mV V o V load Load regulation voltage I o = 1 to 150 mA 25 mV V s , V oV dpDrop voltage I o = 150 mA 200400mV V s , V o SVRRipple rejection (2)2.Guaranteed by design.f r = 100 Hz55dBTable 7. ResetPin Symbol ParameterTest condition Min. Typ. Max. UnitR es V res_l Reset output lowvoltageR ext = 5 k to V o ;V o > 1 V 0.4 V R esI res_hReset output high leakage currentV res = 5 V1µAL4979D, L4979MD Electrical specificationsR es R_p_u Internal pull-upresistanceWith respect to V o 122550kR es V o_th Reset threshold voltage V s = 5.6 to 31 VI o = 1 to 150 mA6%belowV o_ref8%belowV o_ref10%belowV o_refV cr V rhth Reset timing highthresholdV s = 13.5 V44%V o_ref47%V o_ref50%V o_refV cr V rlth Reset timing lowthresholdV s = 13.5 V10%V o_ref13%V o_ref16%V o_refV cr I cr Charge current V s = 13.5 V 8 17 30 µA V cr I dr Discharge current V s = 13.5 V 8 17 30 µA R es t rr_2Reset delay time(1)V o = V o_th - 100 mV100 250 700 µs R es t rd Reset pulse delay V s = 13.5 V; C tr = 1 nF 65 150 ms 1.When V o becomes lower than 4 V, the reset reaction time decreases down to 2 µs assuring a faster resetcondition in this particular case.Table 8. WatchdogPin Symbol Parameter Testcondition Min. Typ. Max. Unit W i V ih Input high voltage V s = 13.5 V 3.5 V W i V il Input low voltage V s = 13.5 V 1.5 V W i V ih Input hysteresis V s = 13.5 V 300 mV W i I i Pull down current V s = 13.5 V 10 20 µA V cw V whth High threshold V s = 13.5 V 2.20 2.35 2.50 V V cw V wlth Low threshold V s = 13.5 V 0.50 0.65 0.80 V V cw I cwc Charge current V s = 13.5 V; V cw = 0.1 V 4 7.5 14 µA V cw I cwd Discharge current V s = 13.5 V; V cw = 2.5 V 1.0 2.4 4.5 µAV cw T wop Watchdog period V s = 13.5 V;C tw = 47 nF25 50 90 msR es t wol Watchdog output lowtimeV s = 13.5 V;C tw = 47 nF6 10 22 msTable 7. Reset (continued)Pin Symbol Parameter Testcondition Min. Typ. Max. UnitDS3717 Rev 119/22Electrical specificationsL4979D, L4979MD10/22DS3717 Rev 11Table 9. EnablePin Symbol Parameter Test condition Min. Typ. Max. UnitE n V en_l Enable input lowvoltage1 VE n V en_hEnable input high voltage3 V E n V en_hy Enable input hysteresis 700 1000 1100 mV E nI _leak Pull down currentE n = 5 V21020µADS3717 Rev 1111/22L4979D, L4979MD Application information3 Application information3.1 Voltage regulatorThe voltage regulator uses a p-channel MOS transistor as a regulating element. With thisstructure a low dropout voltage at current up to 150 mA is achieved. The output voltage is regulated up to transient input supply voltage of 40 V. No functional interruption due to over-voltage pulses is generated. The high precision of the output voltage is obtained with a pre-trimmed reference voltage. A short circuit protection to GND is provided.3.2 ResetThe reset circuit monitors the output voltage V o . If the output voltage drops below V o_th then R es becomes low with a delay time t rr . Real t rr value changes as a non-linear function of delta (V o-th - V o ). The reset low signal is guaranteed for an output voltage V o greater than 1 V.When the output voltage becomes higher than V o_th then R es goes high with a delay t rd . This delay is obtained by 512 periods of an oscillator (see fig. 5). The oscillator period is given by:and reset pulse delay t rd is given by:T OSC V rhth V rlth –()C tr ⋅[]I cr -----------------------------------------------------V rhth V rlth –()C tr ⋅[]I dr-----------------------------------------------------+=t rd 512T OSC⨯=Application informationL4979D, L4979MD12/22DS3717 Rev 113.3 WatchdogThe watchdog input W i monitors a connected microcontroller. If pulses are missing, the reset output R es is set to low. The pulse sequence time can be set within a wide range through the external capacitor C tw . The watchdog circuit discharges the capacitor C tw with the constant current I cwd . If the lower threshold V wlth is reached, a watchdog reset isgenerated. To prevent this reset, the microcontroller must generate a positive edge during the discharge of the capacitor before the voltage has reached the threshold V wlth . In order to calculate the minimum time T dis during which the microcontroller must generate the positive edge, the following equation can be used:Each W i positive edge switches the current source from discharging to charging; the same happens when the lower V wlth threshold is reached. When the voltage reaches the upper threshold V whth the current switches from charging to discharging. The result is a saw tooth voltage at the watchdog timer capacitor C tw .V whth V wlth –()C tw ⨯I cwd T dis⨯=DS3717 Rev 1113/22L4979D, L4979MD Package and PCB thermal data4Package and PCB thermal data4.1SO-8 thermal dataFigure 5. SO-8 PC boardyout condition of R th and Z th measurements (PCB: FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,Cu thickness = 35 mm, Copper areas: from minimum pad lay-out to 2cm 2).*$3*&)7Package and PCB thermal data L4979D, L4979MD14/22DS3717 Rev 11Equation 1: pulse calculation formulawhere δ = t P /TFigure 8. Thermal fitting model of V reg in SO-8ZTH δRTHδZTHtp1δ–()+⋅=*$3*&)7L4979D, L4979MD Package and PCB thermal data 4.2 SO-20 thermal dataFigure 9. SO-20 PC boardyout condition of R th and Z th measurements (PCB: FR4 area = 58 mm x 58 mm, PCB thickness = 2 mm,Cu thickness = 35 mm, Copper areas: from minimum pad lay-out to 6cm2).Table 11. SO-8 thermal parameterArea (cm2)Footprint2R1 (°C/W)4R2 (°C/W)2R3 (°C/W)2R4 (°C/W)41R5 (°C/W)40R6 (°C/W)5840C1 (W.s/°C)0.0003C2 (W.s/°C)0.0025C3 (W.s/°C)0.03C4 (W.s/°C)0.04C5 (W.s/°C)0.1C6 (W.s/°C) 1.052*$3*&)7DS3717 Rev 1115/22Package and PCB thermal data L4979D, L4979MD16/22DS3717 Rev 11DS3717 Rev 1117/22L4979D, L4979MDPackage and PCB thermal dataEquation 2: pulse calculation formulawhere δ = t P /TFigure 12. Thermal fitting model of V reg in SO-20Table 12. SO-20 thermal parameterArea (cm 2)Footprint2R1 (°C/W)4R2 (°C/W)2R3 (°C/W) 2.2R4 (°C/W)10R5 (°C/W)15R6 (°C/W)3518C1 (W.s/°C)0.0003C2 (W.s/°C)0.0025C3 (W.s/°C)0.015C4 (W.s/°C)0.15C5 (W.s/°C) 1.5C6 (W.s/°C)47ZTH δRTHδZTHtp1δ–()+⋅=*$3*&)7Package information L4979D, L4979MD18/22DS3717 Rev 115 Package information5.1 ECOPACK ®In order to meet environmental requirements, ST offers these devices in different grades ofECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: . ECOPACK ® is an ST trademark.5.2 SO-8 package informationL4979D, L4979MD Package informationTable 13. SO-8 mechanical datamm inchSymbolMin.Typ.Max.Min.Typ.Max.A 1.35 1.750.0530.069A10.100.250.0040.010A2 1.10 1.650.0430.065B0.330.510.0130.020C0.190.250.0070.010D(1) 4.80 5.000.1890.197E 3.80 4.000.150.157e 1.270.050H 5.80 6.200.2280.244h0.250.500.0100.020L0.40 1.270.0160.050k0°8°0°8°ddd0.100.0041.Dimensions D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrsshall not exceed 0.15 mm (0.006 inch) in total (both side).DS3717 Rev 1119/22Package information L4979D, L4979MD20/22DS3717 Rev 115.3 SO-20 package informationTable 14. SO-20 mechanical dataDim.mm inchMin. Typ. Max. Min. Typ. Max.A 2.35 2.65 0.093 0.104 A1 0.10 0.30 0.004 0.012B 0.33 0.51 0.013 0.200C 0.23 0.32 0.0090.013D (1)1.“D” dimension does not include mold flash, protusions or gate burrs. Mold flash, protrusions or gate burrsshall not exceed 0.15 mm per side.12.60 13.00 0.496 0.512E 7.407.60 0.2910.299e 1.27 0.050H 10.0 10.65 0.394 0.419 h 0.25 0.75 0.010 0.030 L 0.40 1.27 0.016 0.050k0° (min.), 8° (max.)ddd 0.10 0.004DS3717 Rev 1121/22L4979D, L4979MD Revision history 6 Revision historyTable 15. Document revision historyDate RevisionChanges 01-Jun-2004 3 Changed the values of the parameter “Reset timing high/low threshold.01-Jul-2004 4 Pin Connection SO-20 changed. Changed some textes in the Featuresand table 2. Changed some values in the tables 3, 4 and 5. Changedsome textes in the sections 2, 3 and 4.01-Oct-20045 Changed from Product Preview to final datasheet. 01-Feb-20066 Modified the orderable part numbers for Tape & Reel. 04-Apr-20117Changed document template.Added Chapter 4: Package and PCB thermal data 27-Mar-20128Update Table 3: Absolute maximum ratings 19-Sep-20139Updated Disclaimer.23-Feb-201810Updated template. Removed the tube version on the SO-8 package on the Table 1: Device summary . Updated Section 2.1: Absolute maximumratings20-Sep-201811Added the feature “AEC-Q100 qualified” in cover page with the logoautomotive.L4979D, L4979MDIMPORTANT NOTICE – PLEASE READ CAREFULLYSTMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.No license, express or implied, to any intellectual property right is granted by ST herein.Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.Information in this document supersedes and replaces information previously supplied in any prior versions of this document.© 2018 STMicroelectronics – All rights reserved22/22DS3717 Rev 11。

欧姆尼克 1107 电感说明书

Dimensions: [mm]Scale - 8:1Product Marking:Marking4R7 (Inductance Code)744383360477443833604774438336047B C(mm)B(mm) min.178,001,507443833604774438336047T e m p e r a t u r eT pT L74438336047Cautions and Warnings:The following conditions apply to all goods within the product series of WE-MAPI ofWürth Elektronik eiSos GmbH & Co. KG:General:•This electronic component was designed and manufactured for use in general electronic equipment.•Würth Elektronik must be asked for written approval (following the PPAP procedure) before incorporating the components into any equipment in fields such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network, etc. where higher safety and reliability are especially required and/or if there is the possibility of direct damage or human injury.•Electronic components that will be used in safety-critical or high-reliability applications, should be pre-evaluated by the customer. •The component is designed and manufactured to be used within the datasheet specified values. If the usage and operation conditions specified in the datasheet are not met, the wire insulation may be damaged or dissolved.•Do not drop or impact the components, the component may be damaged.•Würth Elektronik products are qualified according to international standards, which are listed in each product reliability report. Würth Elektronik does not guarantee any customer qualified product characteristics beyond Würth Elektroniks’ specifications, for its validity and sustainability over time.•The customer is responsible for the functionality of their own products. All technical specifications for standard products also apply to customer specific products.Product specific:Soldering:•The solder profile must comply with the technical product specifications. All other profiles will void the warranty.•All other soldering methods are at the customers’ own risk.•To improve the solderability of bottom termination components please refer to appnote ANP036 on our homepage.•Make sure that you use the correct thickness of solder paste to avoid an insufficient soldering result. We recommend 100µm solder paste as a reference.Cleaning and Washing:•Washing agents used during the production to clean the customer application may damage or change the characteristics of the wire insulation, marking or plating. Washing agents may have a negative effect on the long-term functionality of the product. Potting:•If the product is potted in the costumer application, the potting material may shrink or expand during and after hardening. Shrinking could lead to an incomplete seal, allowing contaminants into the core. Expansion could damage the components. We recommend a manual inspection after potting to avoid these effects.Storage Conditions:• A storage of Würth Electronik products for longer than 12 months is not recommended. Within other effects, the terminals may suffer degradation, resulting in bad solderability. Therefore, all products shall be used within the period of 12 months based on the day of shipment.•Do not expose the components to direct sunlight.•The storage conditions in the original packaging are defined according to DIN EN 61760-2.•The storage conditions stated in the original packaging apply to the storage time and not to the transportation time of the components. Packaging:•The packaging specifications apply only to purchase orders comprising whole packaging units. If the ordered quantity exceeds or is lower than the specified packaging unit, packaging in accordance with the packaging specifications cannot be ensured. Handling:•Violation of the technical product specifications such as exceeding the nominal rated current will void the warranty.•Applying currents with audio-frequency signals may result in audible noise due to the magnetostrictive material properties.•The temperature rise of the component must be taken into consideration. The operating temperature is comprised of ambient temperature and temperature rise of the component.The operating temperature of the component shall not exceed the maximum temperature specified.These cautions and warnings comply with the state of the scientific and technical knowledge and are believed to be accurate and reliable.However, no responsibility is assumed for inaccuracies or incompleteness.Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODEsAg003.0002023-03-31DIN ISO 2768-1mDESCRIPTIONWE-MAPI SMT Power InductorORDER CODE74438336047SIZE/TYPE BUSINESS UNIT STATUS PAGEImportant NotesThe following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the areas, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibility for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime cannot be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component. Therefore, customer is cautioned to verify that data sheets are current before placing orders. The current data sheets can be downloaded at .3. Best Care and AttentionAny product-specific notes, cautions and warnings must be strictly observed. Any disregard will result in the loss of warranty.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve specific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Section 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a standard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability expectancy before or when the product for application design-in disposal is considered. The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG. Würth Elektronik eiSos GmbH & Co. KG does not warrant or represent that any license, either expressed or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, application, or process in which Würth Elektronik eiSos GmbH & Co. KG components or services are used.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODEsAg003.0002023-03-31DIN ISO 2768-1mDESCRIPTIONWE-MAPI SMT Power InductorORDER CODE74438336047SIZE/TYPE BUSINESS UNIT STATUS PAGE。

Eaton Moeller NZM Molded Case Circuit Breaker说明说明书

Eaton 112767Eaton Moeller series NZM - Molded Case Circuit Breaker. Circuit-breaker, 3p, 100A, plug-in module, N1-M100-SVEGeneral specificationsEaton Moeller series NZM molded case circuit breaker thermo-magnetic112767401508112307090 mm 201 mm 95 mm 1.192 kg RoHS conformIEC IEC/EN 60947NZMN1-M100-SVEProduct NameCatalog NumberEANProduct Length/Depth Product Height Product Width Product Weight Compliances Certifications Model Code100 AIs the panel builder's responsibility. The specifications for the switchgear must be observed.7.5 kA35 kAMeets the product standard's requirements.Is the panel builder's responsibility. The specifications for the switchgear must be observed.Built-in device plug-in techniquePlug-in unit100 ADoes not apply, since the entire switchgear needs to be evaluated.Min. 2 segments of 9 mm x 0.8 mm at box terminalMax. 9 segments of 9 mm x 0.8 mm at box terminalRocker leverMeets the product standard's requirements.40 °CThermal protectionFinger and back-of-hand proof to VDE 0106 part 100eaton-feerum-the-whole-grain-solution-success-story-en-us.pdfeaton-digital-nzm-brochure-br013003en-en-us.pdfeaton-digital-nzm-catalog-ca013003en-en-us.pdfDA-DC-03_N1eaton-circuit-breaker-nzm-mccb-characteristic-curve.epseaton-circuit-breaker-let-through-current-nzm-mccb-characteristic-curve-002.epseaton-circuit-breaker-nzm-mccb-characteristic-curve-058.epseaton-circuit-breaker-switch-nzm-mccb-dimensions-014.epseaton-circuit-breaker-nzm-mccb-dimensions-017.epseaton-circuit-breaker-adapter-nzm-mccb-dimensions.epseaton-general-ie-ready-dilm-contactor-standards.epseaton-circuit-breakers-nzm-pn1-nzmbc-nzmbn-circuit-breaker-switch-disconnector-instruction-leaflet-il01203004z.pdfIntroduction of the new digital circuit breaker NZMThe new digital NZM RangeDA-CS-nzm1_xsveDA-CD-nzm1_xsveeaton-nzm-technical-information-sheeteaton-manual-motor-starters-starter-msc-r-reversing-starter-wiring-diagram.epseaton-manual-motor-starters-starter-nzm-mccb-wiring-diagram.epsRated operational current for specified heat dissipation (In) 10.11 Short-circuit ratingRated short-circuit breaking capacity Ics (IEC/EN 60947) at 690 V, 50/60 HzRated short-circuit breaking capacity Icu (IEC/EN 60947) at 400/415 V, 50/60 Hz10.4 Clearances and creepage distances10.12 Electromagnetic compatibilityMounting MethodAmperage Rating10.2.5 LiftingTerminal capacity (copper strip)Handle type10.2.3.1 Verification of thermal stability of enclosuresAmbient storage temperature - minFitted with:Protection against direct contact Brochures Catalogues Certification reports Characteristic curveDrawingsInstallation instructions Installation videos mCAD model Technical data sheets Wiring diagramsTerminal capacity (copper busbar)Min. 12 mm x 5 mm direct at switch rear-side connectionM6 at rear-side screw connectionMax. 16 mm x 5 mm direct at switch rear-side connection10.8 Connections for external conductorsIs the panel builder's responsibility.Special featuresMaximum back-up fuse, if the expected short-circuit currents at the installation location exceed the switching capacity of the circuit breaker (Rated short-circuit breaking capacity Icn) Rated current = rated uninterrupted current: 100 A Terminal capacity hint: Up to 95 mm² can be connected depending on the cable manufacturer. With phase-failure sensitivity Tripping class 10 A IEC/EN 60947-4-1, IEC/EN 60947-2 The circuit-breaker fulfills all requirements for AC-3 switching category.Ambient operating temperature - max70 °CClimatic proofingDamp heat, cyclic, to IEC 60068-2-30Damp heat, constant, to IEC 60068-2-78Terminal capacity (aluminum stranded conductor/cable)25 mm² - 35 mm² (2x) direct at switch rear-side connection25 mm² - 95 mm² (1x) at tunnel terminal25 mm² - 35 mm² (1x) direct at switch rear-side connectionTerminal capacity (copper stranded conductor/cable)6 mm² - 25 mm² (2x) at box terminal25 mm² (2x) direct at switch rear-side connection25 mm² - 95 mm² (1x) at 1-hole tunnel terminal10 mm² - 70 mm² (1x) at box terminal10 mm² - 70 mm² (1x) direct at switch rear-side connectionLifespan, electrical7500 operations at 400 V AC-310000 operations at 400 V AC-17500 operations at 690 V AC-15000 operations at 690 V AC-310000 operations at 415 V AC-17500 operations at 415 V AC-3Electrical connection type of main circuitOtherShort-circuit total breaktime< 10 msRated impulse withstand voltage (Uimp) at main contacts6000 VRated short-circuit breaking capacity Ics (IEC/EN 60947) at 400/415 V, 50/60 Hz35 kA10.9.3 Impulse withstand voltageIs the panel builder's responsibility.Utilization categoryA (IEC/EN 60947-2)Number of polesThree-poleAmbient operating temperature - min-25 °C10.6 Incorporation of switching devices and componentsDoes not apply, since the entire switchgear needs to be evaluated.10.5 Protection against electric shockDoes not apply, since the entire switchgear needs to be evaluated.Terminal capacity (control cable)0.75 mm² - 2.5 mm² (1x)0.75 mm² - 1.5 mm² (2x)Equipment heat dissipation, current-dependent23.85 WInstantaneous current setting (Ii) - min800 A10.13 Mechanical functionThe device meets the requirements, provided the information in the instruction leaflet (IL) is observed.10.2.6 Mechanical impactDoes not apply, since the entire switchgear needs to be evaluated.10.9.4 Testing of enclosures made of insulating materialIs the panel builder's responsibility.Rated operational current99 A (400 V AC-3)Rated short-circuit breaking capacity Ics (IEC/EN 60947) at 230 V, 50/60 Hz85 kAApplicationUse in unearthed supply systems at 690 V10.3 Degree of protection of assembliesDoes not apply, since the entire switchgear needs to be evaluated.Rated short-circuit making capacity Icm at 240 V, 50/60 Hz187 kARated short-circuit breaking capacity Ics (IEC/EN 60947) at 440 V, 50/60 Hz35 kADegree of protection (IP), front sideIP40 (with insulating surround)IP66 (with door coupling rotary handle)Rated short-circuit making capacity Icm at 525 V, 50/60 Hz40 kARated short-circuit making capacity Icm at 690 V, 50/60 Hz17 kAInstantaneous current setting (Ii) - max1250 AOverload current setting (Ir) - min80 A10.2.3.2 Verification of resistance of insulating materials to normal heatMeets the product standard's requirements.10.2.3.3 Resist. of insul. mat. to abnormal heat/fire by internal elect. effectsMeets the product standard's requirements.Lifespan, mechanical20000 operationsOverload current setting (Ir) - max100 AVoltage rating690 V - 690 VTerminal capacity (copper solid conductor/cable)6 mm² - 16 mm² (2x) direct at switch rear-side connection16 mm² (1x) at tunnel terminal6 mm² - 16 mm² (2x) at box terminal10 mm² - 16 mm² (1x) at box terminal10 mm² - 16 mm² (1x) direct at switch rear-side connectionDegree of protection (terminations)IP00 (terminations, phase isolator and strip terminal)IP10 (tunnel terminal)10.9.2 Power-frequency electric strengthIs the panel builder's responsibility.Short-circuit release non-delayed setting - min800 ADegree of protectionIP20 (basic degree of protection, in the operating controls area) IP20Overvoltage categoryIIIRated impulse withstand voltage (Uimp) at auxiliary contacts 6000 VTerminal capacity (aluminum solid conductor/cable)10 mm² - 16 mm² (2x) direct at switch rear-side connection10 mm² - 16 mm² (1x) direct at switch rear-side connection16 mm² (1x) at tunnel terminalSwitch off techniqueThermomagneticAccessories requiredNZM1-XSVSAmbient storage temperature - max70 °CRated short-circuit breaking capacity Ics (IEC/EN 60947) at 525 V, 50/60 Hz10 kAOptional terminalsConnection on rear. Screw terminal. Tunnel terminalRelease systemThermomagnetic releasePollution degree310.7 Internal electrical circuits and connectionsIs the panel builder's responsibility.Rated operating power at AC-3, 230 V30 kW10.10 Temperature riseThe panel builder is responsible for the temperature rise calculation. Eaton will provide heat dissipation data for the devices.FunctionsMotor protectionPhase failure sensitiveShort-circuit release non-delayed setting - max1250 AStandard terminalsBox terminalRated short-circuit making capacity Icm at 400/415 V, 50/60 Hz 105 kARated operating power at AC-3, 400 V55 kWTypeCircuit breaker10.2.2 Corrosion resistanceMeets the product standard's requirements.10.2.4 Resistance to ultra-violet (UV) radiationMeets the product standard's requirements.10.2.7 InscriptionsMeets the product standard's requirements.Rated short-circuit making capacity Icm at 440 V, 50/60 Hz74 kAIsolation300 V AC (between the auxiliary contacts)500 V AC (between auxiliary contacts and main contacts)Number of operations per hour - max120Circuit breaker frame typeNZM1Direction of incoming supplyAs requiredShock resistance20 g (half-sinusoidal shock 20 ms)Rated insulation voltage (Ui)690 VEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All rights reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。

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LME49710LME49710 High Performance, High Fidelity Audio Operational AmplifierLiterature Number: SNAS376B芯天下--/March 2007LME49710High Performance, High Fidelity Audio Operational AmplifierGeneral DescriptionThe LME49710 is part of the ultra-low distortion, low noise,high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity bining advanced leading-edge process technology with state-of-the-art circuit design, the LME49710 audio opera-tional amplifiers deliver superior audio signal amplification for outstanding audio performance. The LME49710 combines extremely low voltage noise density (2.5nV/Hz) with vanish-ingly low THD+N (0.00003%) to easily satisfy the most de-manding audio applications. To ensure that the most challenging loads are driven without compromise, the LME49710 has a high slew rate of ±20V/μs and an output current capability of ±26mA. Further, dynamic range is max-imized by an output stage that drives 2k Ω loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads.The LME49710's outstanding CMRR(120dB), PSRR(120dB),and V OS (0.05mV) give the amplifier excellent operational amplifier DC performance.The LME49710 has a wide supply range of ±2.5V to ±17V.Over this supply range the LME49710’s input circuitry main-tains excellent common-mode and power supply rejection, as well as maintaining its low input bias current. The LME49710is unity gain stable. The Audio Operational Amplifier achieves outstanding AC performance while driving complex loads with values as high as 100pF.The LME49710 is available in 8–lead narrow body SOIC, 8–lead plastic DIP, and 8–lead metal can TO-99. Demonstration boards are available for each package.Key Specifications■ Power Supply Voltage Range±2.5V to ±17V■ THD+N (A V = 1, V OUT = 3V RMS , f IN = 1kHz)R L = 2k Ω0.00003% (typ) R L = 600Ω0.00003% (typ)■ Input Noise Density 2.5nV/√Hz (typ)■ Slew Rate±20V/μs (typ)■ Gain Bandwidth Product 55MHz (typ)■ Open Loop Gain (R L = 600Ω)140dB (typ)■ Input Bias Current 7nA (typ)■ Input Offset Voltage 0.05mV (typ)■ DC Gain Linearity Error0.000009%Features■Easily drives 600Ω loads■Optimized for superior audio signal fidelity ■Output short circuit protection■PSRR and CMRR exceed 120dB (typ)■SOIC, DIP, TO-99 metal can packagesApplications■Ultra high quality audio amplification ■High fidelity preamplifiers ■High fidelity multimedia■State of the art phono pre amps■High performance professional audio■High fidelity equalization and crossover networks ■High performance line drivers ■High performance line receivers ■High fidelity active filters© 2007 National Semiconductor Corporation LME49710 High Performance, High Fidelity Audio Operational AmplifierTypical Application20210406FIGURE 1. Passively Equalized RIAA Phono Preamplifier 2L M E 49710Connection Diagrams20210402Order Number LME49710MASee NS Package Number — M08AOrder Number LME49710NASee NS Package Number — N08EMetal Can20210405Order Number LME49710HASee NS Package Number — H08C LME49710Absolute Maximum Ratings (Notes 1, 2)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Power Supply Voltage (V S = V + - V -)36VStorage Temperature −65°C to 150°CInput Voltage(V-) - 0.7V to (V+) + 0.7VOutput Short Circuit (Note 3)Continuous Power DissipationInternally LimitedESD Susceptibility (Note 4)2000VESD Susceptibility (Note 5)200V Junction Temperature 150°CThermal Resistance θJA (SO)145°C/W θJA (NA)102°C/W θJA (HA)150°C/W θJC (HA)35°C/WTemperature RangeT MIN ≤ T A ≤ T MAX –40°C ≤ T A ≤ 85°C Supply Voltage Range±2.5V ≤ V S ≤ ± 17VElectrical Characteristics(Notes 1, 2)The following specifications apply for V S = ±15V, R L = 2k Ω, f IN = 1kHz, and T A = 25°C, unless otherwise specified.SymbolParameterConditionsLME49710Units (Limits)Typical Limit (Note 6)(Notes 7, 8)THD+NTotal Harmonic Distortion + NoiseA V = 1, V OUT = 3V RMSR L = 2k Ω R L = 600Ω0.000030.000030.00009% (max)% (max)IMD Intermodulation Distortion A V = 1, V OUT = 3V RMSTwo-tone, 60Hz & 7kHz 4:10.00005 % (max)GBWP Gain Bandwidth Product 5545MHz (min)SR Slew Rate±20±15V/μs (min)FPBWFull Power BandwidthV OUT = 1V P-P , –3dBreferenced to output magnitude at f = 1kHz10MHz t sSettling timeA V = 1, 10V step, C L = 100pF 0.1% error range 1.2μs e n Equivalent Input Noise Voltagef BW = 20Hz to 20kHz 0.340.65μV RMSEquivalent Input Noise Density f = 1kHz f = 10Hz 2.56.4 4.7 nV /√Hz nV /√Hz i n Current Noise Density f = 1kHz f = 10Hz 1.63.1 pA /√Hz pA /√HzV OSOffset Voltage±0.05±0.7mV (max)ΔV OS /ΔTemp Average Input Offset Voltage Drift vsTemperature40°C ≤ T A ≤ 85°C0.2μV/°C PSRR Average Input Offset Voltage Shift vsPower Supply Voltage ΔV S = 20V (Note 9)125110dB (min)I BInput Bias Current V CM = 0V772nA (max)ΔI OS /ΔTemp Input Bias Current Drift vs Temperature –40°C ≤ T A ≤ 85°C 0.1 nA/°C I OS Input Offset CurrentV CM = 0V 565nA (max)V IN-CM Common-Mode Input Voltage Range+14.1–13.9(V+) – 2.0(V-) + 2.0V (min)V (min)CMRR Common-Mode Rejection –10V<V CM <10V 120110dB (min)Z INDifferential Input Impedance30 k ΩCommon Mode Input Impedance –10V<V CM <10V1000 M ΩA VOLOpen Loop Voltage Gain–10V<V OUT <10V, R L = 600Ω140 dB –10V<V OUT <10V, R L = 2k Ω140125dB –10V<V OUT <10V, R L = 10k Ω140dB 4L M E 49710Symbol Parameter ConditionsLME49710Units(Limits) Typical Limit(Note 6)(Notes 7, 8)V OUTMAX Maximum Output Voltage SwingRL= 600Ω±13.6±12.5VRL= 2kΩ±14.0VRL= 10kΩ±14.1VI OUT Output Current RL= 600Ω, V S = ±17V±26±23mA (min)IOUT-CC Short Circuit Current+53–42mAmAR OUT Output ImpedancefIN= 10kHzClosed-LoopOpen-Loop0.0113ΩΩCLOADCapacitive Load Drive Overshoot100pF16%I SQuiescent Current IOUT= 0mA 4.8 5.5mA (max)Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Note 2:Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specificationsand test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristicsmay degrade when the device is not operated under the listed test conditions.Note 3:Amplifier output connected to GND, any number of amplifiers within a package.Note 4:Human body model, 100pF discharged through a 1.5kΩ resistor.Note 5:Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then discharged directly intothe IC with no external series resistor (resistance of discharge path must be under 50Ω).Note 6:Typical specifications are specified at +25ºC and represent the most likely parametric norm.Note 7:Tested limits are guaranteed to National's AOQL (Average Outgoing Quality Level).Note 8:Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.Note 9:PSRR is measured as follows: VOSis measured at two supply voltages, ±5V and ±15V. PSRR = |20log(ΔVOS/ΔV S)|.LME49710Typical Performance CharacteristicsTHD+N vs Output Voltage V CC = 15V, V EE = –15V, R L = 2k Ω20210476THD+N vs Output Voltage V CC = 12V, V EE = –12V, R L = 2k Ω20210473THD+N vs Output Voltage V CC = 17V, V EE = –17V, R L = 2k Ω20210479THD+N vs Output Voltage V CC = 2.5V, V EE = –2.5V, R L = 2k Ω20210470THD+N vs Output Voltage V CC = 15V, V EE = –15V, R L = 600Ω20210478THD+N vs Output Voltage V CC = 12V, V EE = –12V, R L = 600Ω20210475 6L M E 49710THD+N vs Output Voltage V CC = 17V, V EE = –17V, R L = 600Ω20210481THD+N vs Output Voltage V CC = 2.5V, V EE = –2.5V, R L = 600Ω20210472THD+N vs Output Voltage V CC = 15V, V EE = –15V, R L = 10k Ω20210477THD+N vs Output Voltage V CC = 12V, V EE = –12V, R L = 10k Ω20210474THD+N vs Output Voltage V CC = 17V, V EE = –17V, R L = 10k Ω20210480THD+N vs Output Voltage V CC = 2.5V, V EE = –2.5V, R L = 10k Ω20210471LME49710THD+N vs Frequency V CC = 15V, V EE = –15V,R L = 2k Ω, V OUT = 3V RMS 20210464THD+N vs Frequency V CC = 17V, V EE = –17V,R L = 2k Ω, V OUT = 3V RMS20210467THD+N vs Frequency V CC = 15V, V EE = –15V,R L = 600Ω, V OUT = 3V RMS 20210466THD+N vs Frequency V CC = 17V, V EE = –17V,R L = 600Ω, V OUT = 3V RMS20210469THD+N vs Frequency V CC = 15V, V EE = –15V,R L = 10k Ω, V OUT = 3V RMS 20210465THD+N vs Frequency V CC = 17V, V EE = –17V,R L = 10k Ω, V OUT = 3V RMS20210468 8L M E 49710IMD vs Output VoltageV CC = 15V, V EE = –15V, R L = 2k Ω20210414IMD vs Output VoltageV CC = 12V, V EE = –12V, R L = 2k Ω20210411IMD vs Output VoltageV CC = 17V, V EE = –17V, R L = 2k Ω20210417IMD vs Output VoltageV CC = 2.5V, V EE = –2.5V, R L = 2k Ω20210408IMD vs Output VoltageV CC = 15V, V EE = –15V, R L = 600Ω20210416IMD vs Output VoltageV CC = 12V, V EE = –12V, R L = 600Ω20210413LME49710IMD vs Output VoltageV CC = 17V, V EE = –17V, R L = 600Ω20210419IMD vs Output VoltageV CC = 2.5V, V EE = –2.5V, R L = 600Ω20210410IMD vs Output VoltageV CC = 15V, V EE = –15V, R L = 10k Ω20210415IMD vs Output VoltageV CC = 12V, V EE = –12V, R L = 10k Ω20210412IMD vs Output VoltageV CC = 17V, V EE = –17V, R L = 10k Ω20210418IMD vs Output VoltageV CC = 2.5V, V EE = –2.5V, R L = 10k Ω20210409L M E 49710Voltage Noise Density vs Frequency 20210490Current Noise Density vs Frequency20210489PSRR+ vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 2k Ω, V RIPPLE = 200mVpp 20210491PSRR- vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 2k Ω, V RIPPLE = 200mVpp20210420PSRR+ vs Frequency V CC = 12V, V EE = –12V,R L = 2k Ω, V RIPPLE = 200mVpp 20210494PSRR- vs Frequency V CC = 12V, V EE = –12V,R L = 2k Ω, V RIPPLE = 200mVpp20210455LME49710PSRR+ vs Frequency V CC = 15V, V EE = –15V,R L = 2k Ω, V RIPPLE = 200mVpp 20210497PSRR- vs Frequency V CC = 15V, V EE = –15V,R L = 2k Ω, V RIPPLE = 200mVpp20210425PSRR+ vs Frequency V CC = 17V, V EE = –17V,R L = 2k Ω, V RIPPLE = 200mVpp 202104a0PSRR- vs Frequency V CC = 17V, V EE = –17V,R L = 2k Ω, V RIPPLE = 200mVpp20210438PSRR+ vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 600Ω, V RIPPLE = 200mVpp 20210493PSRR- vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 600Ω, V RIPPLE = 200mVpp20210421L M E 49710PSRR+ vs FrequencyV CC = 12V, VEE= –12V,RL= 600Ω, V RIPPLE = 200mVpp20210496PSRR- vs FrequencyVCC= 12V, VEE= –12V,RL= 600Ω, V RIPPLE = 200mVpp20210424PSRR+ vs FrequencyV CC = 15V, VEE= –15V,RL= 600Ω, V RIPPLE = 200mVpp20210499PSRR- vs FrequencyVCC= 15V, VEE= –15V,RL= 600Ω, V RIPPLE = 200mVpp20210451PSRR+ vs FrequencyV CC = 17V, VEE= –17V,RL= 600Ω, V RIPPLE = 200mVpp202104a2PSRR- vs FrequencyVCC= 17V, VEE= –17V,RL= 600Ω, V RIPPLE = 200mVpp20210444LME49710PSRR+ vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 10k Ω, V RIPPLE = 200mVpp 20210492PSRR- vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 10k Ω, V RIPPLE = 200mVpp20210488PSRR+ vs Frequency V CC = 12V, V EE = –12V,R L = 10k Ω, V RIPPLE = 200mVpp 20210495PSRR- vs Frequency V CC = 12V, V EE = –12V,R L = 10k Ω, V RIPPLE = 200mVpp20210423PSRR+ vs Frequency V CC = 15V, V EE = –15V,R L = 10k Ω, V RIPPLE = 200mVpp 20210498PSRR- vs Frequency V CC = 15V, V EE = –15V,R L = 10k Ω, V RIPPLE = 200mVpp20210426L M E 49710PSRR+ vs Frequency V CC = 17V, V EE = –17V,R L = 10k Ω, V RIPPLE = 200mVpp 202104a1PSRR- vs Frequency V CC = 17V, V EE = –17V,R L = 10k Ω, V RIPPLE = 200mVpp20210439CMRR vs Frequency V CC = 15V, V EE = –15V,R L = 2k Ω202104b1CMRR vs Frequency V CC = 12V, V EE = –12V,R L = 2k Ω202104a8CMRR vs Frequency V CC = 17V, V EE = –17V,R L = 2k Ω202104b4CMRR vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 2k Ω202104a5LME49710CMRR vs Frequency V CC = 15V, V EE = –15V,R L = 600Ω202104b3CMRR vs Frequency V CC = 12V, V EE = –12V,R L = 600Ω202104b0CMRR vs Frequency V CC = 17V, V EE = –17V,R L = 600Ω202104b6CMRR vs Frequency V CC = 2.5V, V EE = –2.5V,R L = 600Ω202104a7CMRR vs Frequency V CC = 15V, V EE = –15V,R L = 10k Ω202104b2CMRR vs Frequency V CC = 12V, V EE = –12V,R L = 10k Ω202104a9L M E 49710CMRR vs FrequencyV CC = 17V, VEE= –17V,RL= 10kΩ202104b5CMRR vs FrequencyVCC= 2.5V, VEE= –2.5V,RL= 10kΩ202104a6Output Voltage vs Supply VoltageRL= 2kΩ, THD+N = 1%20210485Output Voltage vs Supply VoltageRL= 600Ω, THD+N = 1%20210487Output Voltage vs Supply VoltageRL= 10kΩ, THD+N = 1%20210486Output Voltage vs Load ResistanceVCC= 15V, VEE= –15V, THD+N = 1%20210483LME49710Output Voltage vs Load Resistance V CC = 17V, V EE = –17V, THD+N = 1%20210484Output Voltage vs Load Resistance V CC = 2.5V, V EE = –2.5V, THD+N = 1%20210482Small-Signal Transient ResponseA V = –1, C L = 100pF 202104a4Large-Signal Transient ResponseA V = –1, C L = 100pF202104a3L M E 49710Application HintsThe LME49710 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pF will cause little change in the phase characteristics of the amplifiers and are therefore allowable.Capacitive loads greater than 100pF must be isolated from the output. The most straight forward way to do this is to put a resistor in series with the output. This resistor will also pre-vent excess power dissipation if the output is accidentally shorted.Noise Measurement Circuit20210427Complete shielding is required to prevent induced pick up from external sources. Always check with oscilloscope for power line noise.Total Gain: 115 dB at f = 1 kHzInput Referred Noise Voltage: e n = V O /560,000 (V)RIAA Preamp Voltage Gain RIAA Deviation vs Frequency V IN = 10mV, A V = 35.0dB, f = 1kHz20210428Flat Amp Voltage Gain vs Frequency V O = 0dB, A V = 80.0dB, f = 1kHz20210429LME49710Typical ApplicationsNAB Preamp20210430A V = 34.5F = 1 kHz E n = 0.38 μV A WeightedNAB Preamp Voltage Gain vs FrequencyV IN = 10mV, 34.5dB, f = 1kHz20210431Balanced to Single Ended Converter 20210432V O = V1–V2Adder/Subtracter20210433V O = V1 + V2 − V3 − V4Sine Wave Oscillator20210434 20L M E 49710Second Order High Pass Filter(Butterworth)20210435Illustration is f= 1 kHzSecond Order Low Pass Filter(Butterworth)20210436Illustration is f= 1 kHzState Variable Filter20210437LME49710Line Driver20210440Tone Control2021044120210442 22L M E 49710RIAA Preamp20210403A v = 35 dB E n = 0.33 μV S/N = 90 dB f = 1 kHz A WeightedA Weighted, V IN = 10 mV @f = 1 kHzBalanced Input Mic Amp20210443Illustration is:V0 = 101(V2 − V1)LME49710Application InformationDISTORTION MEASUREMENTSThe vanishingly low residual distortion produced by LME49710 is below the capabilities of all commercially avail-able equipment. This makes distortion measurements just slightly more difficult than simply connecting a distortion me-ter to the amplifier’s inputs and outputs. The solution, how-ever, is quite simple: an additional resistor. Adding this resistor extends the resolution of the distortion measurement equipment.The LME49710’s low residual distortion is an input referred internal error. As shown in Figure 2, adding the 10Ω resistor connected between the amplifier’s inverting and non-invertinginputs changes the amplifier’s noise gain. The result is that the error signal (distortion) is amplified by a factor of 101. Al-though the amplifier’s closed-loop gain is unaltered, the feed-back available to correct distortion errors is reduced by 101,which means that measurement resolution increases by 101.To ensure minimum effects on distortion measurements,keep the value of R1 low as shown in Figure 2.This technique is verified by duplicating the measurements with high closed loop gain and/or making the measurements at high frequencies. Doing so produces distortion compo-nents that are within the measurement equipment’s capabili-ties. This datasheet’s THD+N and IMD values were generat-ed using the above described circuit connected to an Audio Precision System Two Cascade.20210407FIGURE 2. THD+N and IMD Distortion Test Circuit 24L M E 49710LME49710 Revision HistoryRev Date Description1.011/16/07Initial release.1.112/12/06Added the Typical Performancecurves.1.201/15/07Added more curves and input sometext edits.1.303/09/07Fixed graphics 20210489 and 90.Physical Dimensions inches (millimeters) unless otherwise notedDual-In-Line Package Order Number LME49710MA NS Package Number M08ADual-In-Line Package Order Number LME49710NA NS Package Number N08E 26L M E 49710LME49710 TO-99 Metal CanOrder Number LME49710HANS Package Number H08CNotesL M E 49710 H i g h P e r f o r m a n c e , H i g h F i d e l i t y A u d i o O p e r a t i o n a l A m p l i f i e rTHE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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