英飞凌高效光伏逆变及储能解决方案(2014研讨会)

主要特点:
1). 谐波含量低 2).每个开关周期只有两个开关管在回路中，所以导通损耗低 3). Q1- Q4只需要 600V耐压器件
Devices Q1,Q4(high frequency) Q2,Q3(low frequency) D3,D4 Requirment Recommended IFX part
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组串型逆变器---MPPT
最大输入电压: 单相逆变器: 550V 三相逆变器: 1000V MPPT 输出电压: 单相逆变器: ≈400V 三相逆变器: ≈800V
单相逆变器:
Devices Q1 D1 Boost MOS Boost Diode Function Recommended IFX part CoolMOS™ P6 /C6/E6 (C7 适合高效设计) thinQ!TM Gen3 600V or Gen5 650V SiC Diode
2014-07-28
S SS G
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TO247-4Pin适合更高频高效率设计
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三电平逆变器 –I字型
IDL02G65C5 IDL04G65C5 IDL06G65C5 IDL08G65C5 IDL10G65C5 IDL12G65C5
更多信息 ：http://www.infineon.com/sic-gen5
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常用逆变电路– “H6”
Pros: 高效率，抑制漏电流 控制简单 Cons: 每个开关周期有三个开关管在回路中，所以导通 损耗相对较大
三相逆变器:
Devices Q1 D1 Boost MOS Boost Diode Function 1200V IGBT thinQ!TM 1200V Gen5 SiC Diode Recommended IFX part
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Pros: 每个开关周期只有两个开关管在回路中，所以导 通损耗低 Q5&Q6 工作在低频开关，开关损耗低 高效率，抑制漏电流 控制简单 Cons: 已申请专利
Devices Q1-Q4(高频管) Q5,Q6(低频管) D1,D2
Requirement
Recommended IFX part
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组串型逆变器---MPPT(三电平)
最大输入电压: Single phase: 550V Three phase: 1000V MPPT 输出电压: Single phase: ≈400V Three phase: ≈800V
IDW10G65C5 IDW12G65C5 IDW16G65C5 IDW20G65C5 IDW30G65C5 IDW40G65C5
IDK02G65C5 IDK03G65C5 IDK04G65C5 IDK05G65C5 IDK06G65C5 IDK08G65C5 IDK09G65C5 IDK10G65C5 IDK12G65C5
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650V SiC Diode thinQ!TM Gen5 产品列表
Vbr = 650V 最大电流达40A 最新封装ThinPAK 8X8
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TO247-4Pin适合更高频高效率设计
Devices Q1,Q4(high frequency) Q2,Q3(low frequency) D1,D2 Requirement 低导通损耗+低开关损耗+ 快恢 1200V IGBT 复反并二极管(考虑无功功率要求) 低导通损耗 Vf,Qrr小 600V IGBT thinQ!TM Gen3 600V or Gen5 650V SiC Diode Recommended IFX part
2,1% 2,4W!
CCM PFC Efficiency @100kHz; 90VAC
0,3% 3,6W!
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Hard
2014-07-28
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最新封装技术
New Packages
ThinPAK 5x6
Solar, UPS, Server, Telecom, (H)EV Lighting Adapter
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TO247-4Pin
G D Schematic Symbol G SS SS
TO-247-4P
D S
S
Traditional 3Pin
D
Page 2
600-650V产品概览
High
功率密度
C7
NEW
SiC Diode
thinQ!TM G5 CP
性能 (效率)
Best in Class
P6 NEW thinQ!TM G2
价格/性能
thinQ!TM G3 C6 E6
CoolMOS™
Low
Easy
设计难度(EMI etc.)
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辅助电源芯片：CoolSET™
650V CoolMOS™ (FF) Fixed Frequency
2014-07-28
QR 800V CoolMOS™ FF QR
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常用逆变电路– Heric
TO220 R2L TO247 D2PAK R2L ThinPAK 8x8
2A 3A 4A 5A 6A 8A 9A 10A 12A 16A 20A 30A 40A
IDH02G65C5 IDH03G65C5 IDH04G65C5 IDH05G65C5 IDH06G65C5 IDH08G65C5 IDH09G65C5 IDH10G65C5 IDH12G65C5 IDH16G65C5 IDH20G65C5
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三电平逆变器 –T字型
Q2 D1
D2 Q3
主要特点:
1). 谐波含量低 2).每个开关周期只有一个开关管在回路中，相比I型电路，导通损耗更低 3). Q1 & Q4 需要1200V耐压器件
低导通损耗+低开关损耗+ 快恢 CoolMOS™ P6/C6 (CFD 考虑无功功率要求) 复反并二极管(考虑无功功率要求) 低导通损耗 Vf,Qrr小 600V IGBT thinQ!TM Gen3 600V or Gen5 650V SiC Diode
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单相逆变器:
Devices Q1,Q2 D1,D2 Boost MOS Boost Diode Function 300V OptiMOS™ 300V Diode Recommended IFX part
三相逆变器:
Devices Q1,Q2 D1,D2 Boost MOS Boost Diode Function Recommended IFX part CoolMOS™ P6 /C6/E6 (C7 适合高效设计) thinQ!TM Gen3 600V or Gen5 650V SiC Diode
目录
新技术&新产品介绍 太阳能组串式逆变器解决方案 太阳能微型逆变器解决方案 太阳能优化器解决方案 太阳能储能系统解决方案 总结
2014-07-28
Copyright © Infineon Technologies AG 2014. All rights reserved.
Devices Q1-Q4(high frequency) Q5,Q6(low frequency) D1,D2
Requirement
Recommended IFX part
低导通损耗+低开关损耗+ 快恢 CoolMOS™ P6/C6 (CFD 考虑无功功率要求) 复反并二极管(考虑无功功率要求) 低导通损耗 Vf,Qrr小 600V IGBT thinQ!TM Gen3 600V or Gen5 650V SiC Diode
英飞凌高效光伏逆变器及储能系统 解决方案
目录
新技术&新产品介绍 太阳能组串式逆变器解决方案 太阳能微型逆变器解决方案 太阳能优化器解决方案 太阳能储能系统解决方案 总结
2014-07-28
CopyrightΒιβλιοθήκη Baidu© Infineon Technologies AG 2014. All rights reserved.
低导通损耗+低开关损耗+ 快恢 CoolMOS™ P6/C6 (CFD 考虑无功功率要求) 复反并二极管(考虑无功功率要求) 低导通损耗 Vf,Qrr小 600V IGBT thinQ!TM Gen3 600V or Gen5 650V SiC Diode
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ThinPAK 8x8
4-Lead TO247
TH
SMD
<2012
2013
2014
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CoolMOS™ C7 产品列表
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