电浆反应器与原理

eH h A H o F Ap l T A ss y A p wC t l u V A pF R i Fz F P s y F u F H u H u iA z A n A H o oo i v T C H z z A A wI n A eCq S G(¤)¡Hi H AH H H A o F C al t l A e AH a a”µl”A a q lØP a t q(¤h O)¹q lØN C q A O H~T A]A A B G A TA A o s b t A AB N t z A H q A s bCq O a I A a q l b q[t o A Il l N q L h C]q l l l p A H I yG O W[A O C o N n tl u b(³s a y)¤W A a y](°)¡A u O F A i o(¦)¡C q l Ay l q l E A p G F q l A lM q l A o O p Ge- + Ar Ar+ + 2 e- (1)q l A g q[t i A O q lA A p H W[A y C ql n o A q p I W v= ¹q q l n= F × d (§O× )= q • ε • λ q l a q q F ε λ q O T w A H n q l n q W [q W [C H A q b q M C Cl ØF w q A P q l I v W [A p Gl P q l A l q l b P O I C q l -Âl t v P t v A y ØA C b w A q A q l -Âl w A o Øw q l -Âl Ø(¿)»P Øw q l (Degree of Ionization)¡C P q l ]P A p 0.1%¨100%³A q A b PECVD q v p 1%¡A ~n D V A p a e B W n D A [W b u N K q o A PECVD l h Cq F (2)¦H ~A i A q n l h q l D E ~h y D A O E o A l A o ØE o A w A e A M l CK v T F l A ]v T C O p 1 torr ®É¡Aq l i H n A l h ]n q l h A p A o (q • ε • λi )»p q l (q • ε • λe )¡A l A i g G= 1/2mv 2 = 3/2kTH C A l C q l A a q l B l AL L k q [t A B b C P q l l I W v C A (·)»P C H C q O B O A A O ]t T ØP B P l w A C b (>100 torr)«h q l Bl M l I W c A l q i H A o T Øl A ]i F K¡CC q N O i b C iD q s ~i C q J q q A A W DE o l B l B l M l A P i be - + ArAr + h ν (3)Ar*e - + Ar +Ar + h ν(2)CVD k h s o S C PECVD k S b O q A l B l A]i H b C C Thermal CVD k O b s A hS w A PECVD k i b C A l A PA]i b D W C q O W R AM o A t v w C A q A i P i A b O W H oi A p i s q L s A pC t~A i O A i H w i J A G i s i Ai C]q J A i W[AW[A i h A o x C(¤)¡C I A pB C q q q yq s l W[A w i M q y A o O]t z RØγ-Ray¡A b a y W h O uγ-Ray i J A L o γ-Ray w i y(¥i H t z L a S h O q yTownsend ©)¡A H p q p M q y A o sTownsend Discharge¡C q~W[600V¡A W zγ-Ray q l b q[t A l l I A q l q W[y e Ao s Avalanche Discharge¡C S q q A i Jq(Normal Glow Discharge)¡C i H N q e y A q y KO A C q D A u o q D A y q Tw G O A y q W[~C C e A G C qO q O W q y K T w(©H q T w)¡A q y W[O qn W[C o q H C q n q O A nq y h A q i J q(Abnormal Glow Discharge)ªCs b A]q n B q A B q q yu A A H q]H I q(Glow Discharge)¡C A~W[q y K A A H o g q l(Thermal Emission Electron, O w O g[A q l e o qA q l)®A q y C o O c A q y yW o g q l A A y q y W[D D D D A qF H o e t q H C s q q(Arc Discharge)¡Cq Gn P n A H aC aD n A l C l iA p l A I t F p ul A p l A a t v A v l AI n A o z C t A Ap A t n C o m l A ACq mm t i t tt C1.¹o y(DC, Direct Current)¹q B g W(RF, Radio Frequency)¹q L i(MW, Microwave)¹q A RF W v13.56MHz¡A MW b 2.45GHz A o O k O P u t W v A b d q Cy q A q m b A n D sV A B oØe b q W a A]H s WD y q n p A e q n p q C By q b t q O A p CRF OØe M q A q i H p DC q m m J A~H(coupled)ªq C N q m yW z DC q q n D A B RF MW i H q Ot C q m~m h p G C q t A RF ]m t q CØe K DC I S RF t D A tq i CMW W[v S A q n p A B MW iI CØe o ECR N MW t y q lA i q n A b K q C b q s Aq l u O u i W[q lØR C P l l Iv H v C t A p M V A i W i J qv A b K q A p Helicon¡B ECR z A b uv q C O i H q(Wafer Damage)ªC2.©tu A P u n P tC PECVD]A H u A u tq N A n l Nu A q A H V C e]N O u AA M~t A]i G kB i B z r AoØw W q O CA VB A y A H q be J e H L o C o]n A h to w A]A o n g L y]CCVD G k r A B z n S O N Cq L N o m(Cold Trap)§l N g B M Ct~A p G D J M q C o e y V A H bP m q O Ce m P mG B RF P m3.¤p D n AC m uA A h m C Pl l A H p P C4.¶i ti H T C s Ae A g y p y A C i h o eA u T w A o wT A g i a C ig w a C T i T m o eo A A e C T i A5.ÀtI(Base Pressure)¦b u(~10-5torr)¦u O b torr0.1 torr A O p n O]m C u O q l u O p(Ion Gauge)Pirani Gauge¡A u O q e u O p(Baratron)¤qO p(Convectron)¡A i H q s d A q u O AØv T A u C q e O p M d A PØL A q o O O B T C t t O qt Cq O q n A v T q B t v A vT F A p q E l A O M w FO C6.ºtp A F S w A pi T C p D n A Pz A i p A i z A pT C A l R h RR C p A p z u z A A tp p C o m P P A vp C Langmuir Probe q q l B l (·)¡B v A OES(Optical Emission Spectroscopy)¶q Co A q C~up ggT p mqB q kk n C G i kS k k A k t B V k B k d G B zg S C]i o b T P G a A W un T G N k A S V W A Vk A k P e(aspect ratio)¸p C q i k Sk k A C A S G V D A B D V k SØe b s D n k C q k k g L qk l A]A l B l A H t t kG A p GSi(s) + 4F¡E(g)SiF4(g)SiO2(s) + CF x E(g)SiF4(g) + SiF2(g)+CO(g)+CO2(g)+COF2(g)+SiOF2(g)+O2(g) q l b k M A N q z M wl G C l q v T A H G k AV k S A~¤T F l q l A H oV q V A]k P e CA q k k i q M w l A i M wS C A L]-©T C A ClB G k F k q kH b s i B A u p n e A yk k n D O R B C q B P O DW V q AØe b s G q k k C L ts L q t(Micro Electro Mechanical System, MEMS)¦]Øes b s D C A B A N k A kB L q t a u P ck D V L k N a u h h A uD(Line of Sight Problem)¥Øe O k N CB t l k zV vSi F2,CF4-O2,C2F6-O2,C3F8-O2,SF6-O2,SiF4-O2,NF3,ClF3V b SiO2,Si x N y,ªA WSiO2P W C l q VA l q LVb III-V±b WSi x N y P W P SiO2b SiO2W V A vTiS2,TaSi2, MoSi2,WSi2P W l q AD Vb SiO2,Si x N y W A b Si x N y W1:1Ti,Ta,Mo,W, Nb P W b l q DVb v b SiO2W A bTaO2WTa2N P W b C l qVb TaO2,SiO2,Al2O3¤W¿ï¾Ü²vG B M t k zV v Si CF4, C2F6b C lq D VSiO2, Si x N y CF4, C2F6,C3F8, CHF3,CF4/C2F6-H2, CH4,C2H2/C2H4 additions b l q DVb Si M III-VWTiO2, V2O5P W TiVT B M l k zV vSi Cl2, CCl4, CF2Cl2,CF3Cl, Cl2/C2F6,Cl2/CCl4, Br2, CF3Br b l qD V bVSiO2III-V Compounds Cl2, CCl4, CF2Cl2,CCl4/O2, Cl2/O2, Br2J M BCl3V b lq D V CCl2M Br2A bp VSiO2, Al2O3, Cr,MgOAl Cl2, CCl4, SiCl4,BCl3, Cl2/CCl4,Cl2/BCl3,Cl2/CH3Cl, SiCl4/Cl2J M BCl3V b lq D V CLA h Cl2VAl2O3MTi, Cr, CrO2, Au Br2Cl2/O2/Ar,CCl4/O2/Ar,Cl2/Ar, CCl4/ArC2Cl2F4, Cl2b C l q DV1:1 vs CrO2 at >20%O2CrT q l l A N ]q e q g A H q g A q g v (sputtering yield)¬C J g l i q v l A v T q g v n ]v c A J g l q P q A q g P C J g l q q (threshold energy)¤~O N v l q A v q b 10~30eV¡A J g l q W L q A q g v t W [A J g l q W L 100eV A q g v G H J g l q e u W [A q g v ~C ~l q A q g v W [w A q g v F A A w w A q g v H J g l q W [O ]l J v A l q m A ]i F q C H W z i H q z C W q O q v n z H A b l F v A 70%ªq A 25%ªq b G q l A u 2.2%ªq O b q g B J W A o N O q g v N o m ]A H K L A ]H o b q W C b q g L A ]q l q h A A [W q l i H t g a (¦p chamber wall)¦q q A p o q l b q q o H A K n D A ]K q k (Magnetron sputtering)Cq l O Øa t q l A q P q O q [t A q l N i H o q A H q q A p b q [J A q l N B A B B P b i H g :qB V m r ee××= --(4)e m e V O q l q B t A B A q q q q A )Coulomb (106.119w −×b q L A F u (k )~A A q J (p )A H h A q (Reactive sputtering deposition)A i P v o A ]b q L A v q l F A l B l B G q l ~A l q g C(a)q t c(b)q t cT H n(Plasma Enhanced CVD)1.¥sa.SiNSi3N4b b s O n h(Diffusion Barrier Layer)AB B P K A q t h O hC H e Thermal CVD ks Si3N4A H SiH4+NH3+N2b700~1000o C o C PECVD H SiH4+NH3i i b C o t Si B N C]q A PECVDm v T A M w C N 1.O B 2.i B 3.O B 4.RF v B 5.q c B 6.c B7.t v B8.qC z P Thermal CVD k Si3N4C S G300 o C S Thermal CVD 900o C PECVDSi3N4 Si x N y H zSi/N0.75 0.8~1.0 K(g/m3) 2.8~3.1 2.5 2.8g v 2.0~2.1 2.0 2.1q6~7 69t q(V/cm) 1×1076×106q(Ω•cm) 1015~1017 1015O(dyne/cm2) 1.2~1.8×1010 1~8×109(1/o C) 4×10-6 4~7×10-6C Lnw n A>400 o CB Thermal CVD P PECVD Si3N4PECVD k SiN D n G1.n(Step Coverage)2.o K A i z3.4.L B w A i s p5.6.t B lb.SiOq t t h C s W P P-SiN A i SiH4+N2O AP p GS Thermal CVD PECVDSiH4 + O2 SiH4 + N2OSiO2 SiO x±8% >±5%q(1MHz) 4.0~4.4 4.6g v 1.48 1.54uw K(cm-2) 10~100 ≤3OB Thermal CVD P PECVD SiO22.¤ (Reactive Sputtering)t z l A l A g t vl A A PVD s C qP i o A q J g q A A P q lA b C oØI T]i H Ae d A q k C l p g(TiN)AH g v A N()V(q l)q J q s C n NO v]l l A y V A q b e NH O A q l M v h l h H A C3.¹E (Plasma Polymerization)l H T i E l C oi o E l A D n S1.l c E A O L h s b C2.i E L k C p J B A C3.[(Cross Linking)c A B t B k A Sw Cp C A q E 1.B 2.lB 3.Ei J q h A A i E A E O bP o A A H O B i y q M q v C i c p GC B q E mO qRFRFP ue PK B q E i c A Mi l (initial monomer)Ag q (Mi*)(*Mk*)A o A M L l (M)(Mi*)B (*Mk*)A Øl A o l i q p A g L t l C(High Density Plasma)H b s i B A b O n J W[A PV V p A p O k NT A q N o n C q A h l Aq l P q l A F h n ol A O l A l g q l A p G b P O e L IA l q A G y z C q v b1%k A]N O q J l l E E l A Hl l I v A olØH K P l I A G q v H W[A K q w W z I o N C K q w q b CK P q K A q z D q a I A N KC G N O N q l P l I v A q l L k I l NL k y A l P O]N O K A Ky q l W[A i q o g t q PI A H q]p b w C H w bK q A]A ICP B ECR B Helicon PIII N CP q(Inductively Coupled Plasma, ICP)P q(Inductively-Coupled-Plasma, ICP)A RFP o q C u z A p2-4 [42]Cu W[W W q]RF power supply A u W q y H A5w w G∇×H = J + ε0(∂E/∂t) --(5)E:q(V olts/m)H:(Amperes/m)J:q y K(Amperes/m2)i P H A B6k w G∇×E = - µ0(∂H/∂t)--(6)P V q A q[t q l C[t q l H q v q o q P lI o i q Cg i P q P O g i q P B O e H P(inductively coupling)q A h O H q e(capacitively coupling)q C H q e q A q l q o OO q q t[t A H q v T q l B V P q AS P l I q l k q]q W A q b[q P]y P q lØC b P q A q lP q v T B V P q A]h q l l b q W AG i u P q l K(q K) C u t qP q p CE B P q u zFig. 2-4 The diagram illustrating the principle of inductively-coupled-plasma [42].q l (Electron Cyclotron Resonator, ECR)l t 1982~o A q l b W vM L i W v 2.45GHz P A L i H A b C l L i v K q C q l A q l O u y g B A V O P A he e m R B e V B V e R Vm vv v v v =⇒×=2)(9922.2722GHz B m eB m e B R V ece ce e cev vv v ≅==⇒==ππϖνϖ A m e N q l q F V N q l t A B N O AR N q l O u b F hce N q l W vB u t q o ICP qG B GHz ce87545.2≅⇒=vνW p o B=875G A q l W v M L i 2.45GHz A ]il L i CHeliconHelicon u t helicon wave H K q C Helicon u ]p p G G u q i P b V helicon wave A i i I (Collision damping)D I D (Collisionless Laudau damping)N q q C Helicon Wave u b V A b V n i A I i p T A Helicon p B CG ECR t (a)t c (b)b V A h A ØwG G W Helicon k u F u]pT G Helicon I i G A u O u A u q OuG Lucas Signaton q V ortex Helicon Etcher B Helicon c(MØRI TM Helicon Reactor)(Vacuum Arc) / PIII (Plasma Immersion Ion Implantation)l u a l(q l M]l A LO u O A S B k S)AØA O Gu s b l A A F e N O A o N O PIII N C W t q N A I[q O i N lO A s u q q C u q q Pq O l D A O q A S P qN v l i P O O l A C u q N nq K y y q(DC)A]e A F]t v K q v u I A O N Cb u A t u n p q N i Hq A q y q A q y q S N qb W p I A(Spot)Ac p A I iH L W A b A q eA A b q l o g l A l Al v h]h q l C b z qq O c A O A A q y q~qA C O q y y L I A w F I A FØA H t L k A A n g Lq A]l A A o N O N v G F100%C D T w b W b v W t A V t i~[[H C y v H G w(Macroparticles)A G w O N P R A mA G w d b10-6~10-9mm A]G w yA~v T CG c P c Nh s s w V AC i s A LØe M G1%CL o m h e 90o A ~[m l e i ~Ap C o Øm M i H A y l Øq CH W K q A ]o A q z A S J A o D N O N A t ~K q p q (Hollow cathode plasma)B i (Surface wave)(HelicalResonator)g T y z C q N i B B A b x W o s u O B A ~i f x S v o O A O H O ~l x W o N t ~A [N o N b x W o G CC BL o m c뎱랥륱ꦷ륶ꟷ d냲꩏ e 90o fg뫏돵y Gq I l i H i h u Cq z P M b b~A b q K qh O~h i a]V D n o N A x W b qN o A i f x q u A o y O~b i W H o x C q D u bb s W A q H D h z Ah~A q A h H~J s Cm G1. B. N. Chapman, Glow Discharge Processes, John Wiley & Sons, 19802.J. L. V ossen, W. Kern, Thin Film Processes II, Academic Press, 19913.M. A. Lieberman, A. J. Lichtenberg, Principles of Plasma Discharges andMaterials Processing, John Wiley & Sons, 19944.M. Konuma, Film Deposition by Plasma Techniques, Springer-Verlag, 19925., q, u N, 19956., y, H I n k b, u N, 2000。