PNP三极管数据手册D45h11

Figure 7. D44H11 ON−Voltage
SATURATION VOLTAGE (VOLTS)
1.4 VBE(sat) @ IC/IB = 10
1.2
1.0
−40°C
0.8 125°C
0.6 25°C
0.4
0.2
0
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 8. D45H11 ON−Voltage
Publication Order Number: D44H/D
D44H Series (NPN),
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Figure 4. D45H11 DC Current Gain
0.40 0.35
VCE(sat) @ IC/IB = 10
0.30
0.25
−40°C
0.20
0.15
25°C
0.10
125°C
0.05
0
0.1
1
10
IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON−Voltage
RqJC RqJA
TL
1.8
°C/W
62.5
°C/W
275
°C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1000 VCE = 1 V
100
125°C −40°C
25°C
1000 VLeabharlann E = 1 V125°C25°C
100
−40°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10
10
0.01
0.1
1
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
ts D44H Series
D45H Series
ns
−
500
−
−
500
−
Fall Time (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc)
tf D44H Series
D45H Series
ns
−
140
−
−
100
−
2
D44H Series (NPN),
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
SATURATION VOLTAGE (VOLTS)
10
10
0.01
0.1
1
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. D44H11 DC Current Gain
Figure 10. Power Derating
1.0 0.7 D = 0.5 0.5
SATURATION VOLTAGE (VOLTS)
0.6 VCE(sat) @ IC/IB = 10
0.5
0.4 −40°C
0.3 25°C
0.2
125°C
0.1
0
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
Figure 6. D45H11 ON−Voltage
3
fT D44H Series
D45H Series
−
50
−
40
MHz − −
SWITCHING TIMES
Delay and Rise Times (IC = 5.0 Adc, IB1 = 0.5 Adc)
td + tr
ns
D44H Series
−
300
−
D45H Series
−
135
−
Storage Time (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
ICES
−
−
10
mA
Emitter Cutoff Current (VEB = 5.0 Vdc)
IEBO
−
−
10
mA
ON CHARACTERISTICS
DC Current Gain (VCE = 1.0 Vdc, IC = 2.0 Adc) (VCE = 1.0 Vdc, IC = 4.0 Adc)
Collector−Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0 Adc)
D44H8, D45H8 VCEO(sus)
60
−
D44H11, D45H11
80
−
−
Vdc
−
Collector Cutoff Current (VCE = Rated VCEO, VBE = 0)
50 Units/Rail
D45H8G
TO−220 (Pb−Free)
50 Units/Rail
D45H11G
TO−220 (Pb−Free)
50 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Figure 9. Maximum Rated Forward Bias Safe Operating Area
PD, POWER DISSIPATION (WATTS)
TA TC 3.0 60 2.0 40 1.0 20
00 0
TC TA
20 40 60 80 100 120 140 160 T, TEMPERATURE (°C)
© Semiconductor Components Industries, LLC, 2013
1
September, 2013 − Rev. 12

10 AMP COMPLEMENTARY SILICON POWER
TRANSISTORS 60, 80 VOLTS
PNP COLLECTOR 2, 4
IC, COLLECTOR CURRENT (AMPS)
Figure 1. D44H11 DC Current Gain
Figure 2. D45H11 DC Current Gain
1000 VCE = 5 V
125°C
25°C
100
−40°C
1000
VCE = 5 V
125°C
25°C
100
−40°C
= Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
D44H8G
TO−220 (Pb−Free)
50 Units/Rail
D44H11G
TO−220 (Pb−Free)
Collector Current − Peak (Note 1)
Total Power Dissipation @ TC = 25°C @ TA = 25°C
VEB
5.0
Vdc
IC
10
Adc
ICM
20
Adc
PD
W
70
2.0
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
4
1 BASE
EMITTER 3
MARKING DIAGRAM
1 2 3
TO−220AB CASE 221A−09
STYLE 1
D4xHyyG AYWW
D4xHyy
A Y WW G
= Device Code x = 4 or 5 yy = 8 or 11
Features
• Low Collector−Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • These Devices are Pb−Free and are RoHS Compliant*
100
50
30
20
1.0 ms 100 ms
10
10 ms
5.0
3.0
2.0
TC ≤ 70° C
dc
1.0
DUTY CYCLE ≤ 50%
1.0 ms
0.5
0.3 0.2
0.1 1.0
D44H/45H8 D44H/45H10,11
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
D44H Series (NPN),
1.2 VBE(sat) @ IC/IB = 10
1.0
−40°C
0.8
125°C
0.6 25°C
0.4
0.2
0
0.1
1
10
IC, COLLECTOR CURRENT (AMPS)
DYNAMIC CHARACTERISTICS
VBE(sat)
−
−
1.5
Vdc
Collector Capacitance (VCB = 10 Vdc, ftest = 1.0 MHz)
Ccb
pF
D44H Series
−
90
−
D45H Series
−
160
−
Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)
D44H Series (NPN), D45H Series (PNP)
Complementary Silicon Power Transistors
These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11
VCEO
Vdc
60
80
Emitter Base Voltage
Collector Current − Continuous
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.4 Adc)
hFE
60
−
40
−
− − −
VCE(sat) −
Vdc
−
1.0
Base−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 0.8 Adc)