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射频溅射
氧化亚铜;氧化铁
在氮气氛围百度文库450℃退火四个小时
A.Barnabe,E.Mugnier,L.Presmanes,Ph.Tailhades.Preparation of delafossite CuFeO2thin film by rf-sputtering on conventional glass substrate[j].Materials Letters ,60(2006)3468-3470
实验方法
试剂
退火温度控制
参考文献
溶胶凝胶
醋酸铜；硝酸铁；无水乙醇；三乙醇胺
1、在空气中以5℃/min的速度升到500℃，在500℃退火一个小时2、在流动氮气中以5℃/min的速度升到600-800℃，并在此温度下退火2小时
Hong-YingChen*,Jia-HaoWu.Transparent conductive CuFeO2 thin films prepared bysol-gel processing [J].AppliedSurface Science,258(2012)4844-4847
溶胶凝胶
醋酸铜；硝酸铁；无水乙醇；醋酸镁
先在空气中300℃退火预处理15min，在氮气氛围下，在管式炉中900℃退火一个小时
Zanhong Deng,Xiaodong Fang,Suzhen W YipingZhao,Weiwei Dong,Jingzhen Shao,Shimao Wang. Structure and optoelectronic property of Mg-doped CuFeO2 thin films prepared by sol-gel method[J].Journal of Alloys and Compounds,577(2013)658-662
溶胶凝胶
醋酸铜;氯化铁;乙醇胺;无水乙醇
在空气中500℃退火一个小时
R.K.Gupta,M.Cavas,Ahmed A.Al-Ghamdi,Z.H.Gafer,F.EI-Tanwy,F.Yakuphanoglu.Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode[J].Solar Energy, 92(2013)1-6
阴极电沉积法
硝酸铜；高氯酸铁；高氯酸钾
在Ar气环境下650℃退火一个小时
Carrie G. Read,YiseulPark, and Kyoung-Shin Choi. Electrochemical Synthesis of p-Type CuFeO2Electrodes for Use in a Photoelectrochemical Cell[J]. J.Phys Chem .Lett.2012,3,1872-1876
溶胶凝胶
醋酸铜；硝酸铁PEG20000
在氮气环境下900℃退火一个小时
Zanhong Deng, Xiaodong Fang,Suzhen Wu, Weiwei Dong, Jingzhen Shao, Shimao Wang Man Lei. The morphologies and optoelectronic properies of delafossite CuFeO2thin films prepared by PEG assisted sol-gel method
脉冲激光
氧化亚铜；氧化铁
在低的氧偏压条件下500℃退火10min
S．Z．Li,J. Liu,X.Z Wang,B.W.Yan,H. Li,J-M.Liu.Epitaxial growth of delafossite CuFeO2thin films by pulse laser deposition[J].Physica B 407(2012)2412-2415
溶胶凝胶
醋酸铜；硝酸铁；三乙醇胺；无水乙醇
1、在空气中以5℃/min的速度升到500℃，在500℃退火一个小时2、用常压等离子体在不同氧含量氛围下650℃退火20min
Hong-Ying Chen,Jun-Rong Fu.Delafossite- CuFeO2thin films prepared by atmospheric pressure plasma annealing[J].Materials Letters 120(2014)47-49
溶胶凝胶
硝酸铜;硝酸铁;醋酸;乙二醇甲醚;PEG20000
在流动氮气氛围下900℃退火两小时
Li Zhang,Ping Li, Kai Huang,Zhen Tang,Guohong Liu,Yibao Li.Chemical solution deposition and transport properties of epitaxial CuFeO2thin films[J]. Materials Letters65(2011)3289-3291
氧化亚铜;氧化铁
在氮气氛围百度文库450℃退火四个小时
A.Barnabe,E.Mugnier,L.Presmanes,Ph.Tailhades.Preparation of delafossite CuFeO2thin film by rf-sputtering on conventional glass substrate[j].Materials Letters ,60(2006)3468-3470
实验方法
试剂
退火温度控制
参考文献
溶胶凝胶
醋酸铜；硝酸铁；无水乙醇；三乙醇胺
1、在空气中以5℃/min的速度升到500℃，在500℃退火一个小时2、在流动氮气中以5℃/min的速度升到600-800℃，并在此温度下退火2小时
Hong-YingChen*,Jia-HaoWu.Transparent conductive CuFeO2 thin films prepared bysol-gel processing [J].AppliedSurface Science,258(2012)4844-4847
溶胶凝胶
醋酸铜；硝酸铁；无水乙醇；醋酸镁
先在空气中300℃退火预处理15min，在氮气氛围下，在管式炉中900℃退火一个小时
Zanhong Deng,Xiaodong Fang,Suzhen W YipingZhao,Weiwei Dong,Jingzhen Shao,Shimao Wang. Structure and optoelectronic property of Mg-doped CuFeO2 thin films prepared by sol-gel method[J].Journal of Alloys and Compounds,577(2013)658-662
溶胶凝胶
醋酸铜;氯化铁;乙醇胺;无水乙醇
在空气中500℃退火一个小时
R.K.Gupta,M.Cavas,Ahmed A.Al-Ghamdi,Z.H.Gafer,F.EI-Tanwy,F.Yakuphanoglu.Electrical and photoresponse properties of Al/p-CuFeO2/p-Si/Al MTCOS photodiode[J].Solar Energy, 92(2013)1-6
阴极电沉积法
硝酸铜；高氯酸铁；高氯酸钾
在Ar气环境下650℃退火一个小时
Carrie G. Read,YiseulPark, and Kyoung-Shin Choi. Electrochemical Synthesis of p-Type CuFeO2Electrodes for Use in a Photoelectrochemical Cell[J]. J.Phys Chem .Lett.2012,3,1872-1876
溶胶凝胶
醋酸铜；硝酸铁PEG20000
在氮气环境下900℃退火一个小时
Zanhong Deng, Xiaodong Fang,Suzhen Wu, Weiwei Dong, Jingzhen Shao, Shimao Wang Man Lei. The morphologies and optoelectronic properies of delafossite CuFeO2thin films prepared by PEG assisted sol-gel method
脉冲激光
氧化亚铜；氧化铁
在低的氧偏压条件下500℃退火10min
S．Z．Li,J. Liu,X.Z Wang,B.W.Yan,H. Li,J-M.Liu.Epitaxial growth of delafossite CuFeO2thin films by pulse laser deposition[J].Physica B 407(2012)2412-2415
溶胶凝胶
醋酸铜；硝酸铁；三乙醇胺；无水乙醇
1、在空气中以5℃/min的速度升到500℃，在500℃退火一个小时2、用常压等离子体在不同氧含量氛围下650℃退火20min
Hong-Ying Chen,Jun-Rong Fu.Delafossite- CuFeO2thin films prepared by atmospheric pressure plasma annealing[J].Materials Letters 120(2014)47-49
溶胶凝胶
硝酸铜;硝酸铁;醋酸;乙二醇甲醚;PEG20000
在流动氮气氛围下900℃退火两小时
Li Zhang,Ping Li, Kai Huang,Zhen Tang,Guohong Liu,Yibao Li.Chemical solution deposition and transport properties of epitaxial CuFeO2thin films[J]. Materials Letters65(2011)3289-3291