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HL6714G
AlGaInP Laser Diode
ODE-208-044 (Z) Rev.0
Oct. 17, 2006
Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage.
Internal Circuit
1
3
PD
LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power LD reverse voltage
PO(pulse) VR(LD)
PD reverse voltage Operating temperature
PO = 10 mW TC = 25°C
0.6
0.4
0.2
Parallel
0 -40 -30 -20 -10 0 10 20 30 40
Angle, θ ( ° )
HL6714G
Package Dimensions
As of July, 2002
Unit: mm
+0.1 –0
0.4
φ
9.0
+0 –0.025
Features
• Visible light output at wavelengths up to 680 nm • Single longitudinal mode • High output power: 10 mW (CW) • Built-in monitor photodiode
Package Type • HL6714G: G2
30
— 680 1.5
Unit mA V mW/mA
°
(TC = 25°C) Testቤተ መጻሕፍቲ ባይዱConditions — PO = 10 mW 6 (mW) / (I(8mW) – I(2mW)) PO = 10 mW, FWHM
°
PO = 10 mW, FWHM
µm PO = 10 mW, NA = 0.55
θ//
5
8
parallel to the junction
Beam divergence
θ⊥
18
22
parpendicular to the junction
Astigmatism
AS
—
10
Lasing wavelength
λp
660
670
Monitor current
IS
0.3
0.8
Max 60 2.7 0.8 11
TC = 0°C 8
50°C
6
25°C 4
2
0 0 20 40 60 80 100
Forward current, IF (mA)
Slope efficiency, ηs (mW/mA)
Slope Efficiency vs. Case Temperature 1.0
0.8
0.6
0.4
0.2
0 0 10 20 30 40 50 60 Case temperature, TC (°C)
Lasing Wavelength, λp (nm)
Wavelength vs. Case Temperature 685
PO =10 mW 680
675
670
665
660 0
10 20 30 40 50 60 Case temperature, TC (°C)
Rev.0 Oct. 17, 2006 page 2 of 4
V V °C °C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
35
LD operating voltage
VOP
—
—
Slope efficiency
ηs
0.3
0.5
Beam divergence
LD/G2 — — 1.1 g
Rev.0 Oct. 17, 2006 page 3 of 4
HL6714G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent.
1.0 ± 0.1
(0.65)
(90˚)
3.5 ± 0.2 0.3
Glass
φ
7.2
+0.3 –0.2
φ 6.2 ± 0.2
(φ2.0)
Emitting Point
2.45
1.5 ± 0.1
9±1
3 – φ 0.45 ± 0.1 123
1 2
3 φ 2.54 ± 0.35
OPJ Code JEDEC JEITA Mass (reference value)
5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
VR(PD) Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings 10 12 * 2 30
–10 to +50 –40 to +85
2
(TC = 25°C) Unit mW mW
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product.
nm PO = 10 mW
mA
PO = 10 mW, VR(PD) = 5 V
Rev.0 Oct. 17, 2006 page 1 of 4
Optical output power, PO (mW)
HL6714G
Typical Characteristic Curves
Optical Output Power vs. Forward Current 10
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
Monitor Current vs. Case Temperature 1.0
PO =10 mW VR(PD) = 5 V 0.8
0.6
0.4
0.2
0 0 10 20 30 40 50 60 Case temperature, TC (°C)
Far Field Pattern 1.0
Perpendicular 0.8
Relative intensity
Monitor current, IS (mA)
Threshold current, Ith (mA)
Threshold Current vs. Case Temperature 100
50
30 20
0 10 20 30 40 50 60 Case temperature, TC (°C)
AlGaInP Laser Diode
ODE-208-044 (Z) Rev.0
Oct. 17, 2006
Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage.
Internal Circuit
1
3
PD
LD
Absolute Maximum Ratings
Item
Symbol
Optical output power
PO
Pulse optical output power LD reverse voltage
PO(pulse) VR(LD)
PD reverse voltage Operating temperature
PO = 10 mW TC = 25°C
0.6
0.4
0.2
Parallel
0 -40 -30 -20 -10 0 10 20 30 40
Angle, θ ( ° )
HL6714G
Package Dimensions
As of July, 2002
Unit: mm
+0.1 –0
0.4
φ
9.0
+0 –0.025
Features
• Visible light output at wavelengths up to 680 nm • Single longitudinal mode • High output power: 10 mW (CW) • Built-in monitor photodiode
Package Type • HL6714G: G2
30
— 680 1.5
Unit mA V mW/mA
°
(TC = 25°C) Testቤተ መጻሕፍቲ ባይዱConditions — PO = 10 mW 6 (mW) / (I(8mW) – I(2mW)) PO = 10 mW, FWHM
°
PO = 10 mW, FWHM
µm PO = 10 mW, NA = 0.55
θ//
5
8
parallel to the junction
Beam divergence
θ⊥
18
22
parpendicular to the junction
Astigmatism
AS
—
10
Lasing wavelength
λp
660
670
Monitor current
IS
0.3
0.8
Max 60 2.7 0.8 11
TC = 0°C 8
50°C
6
25°C 4
2
0 0 20 40 60 80 100
Forward current, IF (mA)
Slope efficiency, ηs (mW/mA)
Slope Efficiency vs. Case Temperature 1.0
0.8
0.6
0.4
0.2
0 0 10 20 30 40 50 60 Case temperature, TC (°C)
Lasing Wavelength, λp (nm)
Wavelength vs. Case Temperature 685
PO =10 mW 680
675
670
665
660 0
10 20 30 40 50 60 Case temperature, TC (°C)
Rev.0 Oct. 17, 2006 page 2 of 4
V V °C °C
Optical and Electrical Characteristics
Item
Symbol
Min
Typ
Threshold current
Ith
20
35
LD operating voltage
VOP
—
—
Slope efficiency
ηs
0.3
0.5
Beam divergence
LD/G2 — — 1.1 g
Rev.0 Oct. 17, 2006 page 3 of 4
HL6714G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent.
1.0 ± 0.1
(0.65)
(90˚)
3.5 ± 0.2 0.3
Glass
φ
7.2
+0.3 –0.2
φ 6.2 ± 0.2
(φ2.0)
Emitting Point
2.45
1.5 ± 0.1
9±1
3 – φ 0.45 ± 0.1 123
1 2
3 φ 2.54 ± 0.35
OPJ Code JEDEC JEITA Mass (reference value)
5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
VR(PD) Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%
Ratings 10 12 * 2 30
–10 to +50 –40 to +85
2
(TC = 25°C) Unit mW mW
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product.
nm PO = 10 mW
mA
PO = 10 mW, VR(PD) = 5 V
Rev.0 Oct. 17, 2006 page 1 of 4
Optical output power, PO (mW)
HL6714G
Typical Characteristic Curves
Optical Output Power vs. Forward Current 10
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
Monitor Current vs. Case Temperature 1.0
PO =10 mW VR(PD) = 5 V 0.8
0.6
0.4
0.2
0 0 10 20 30 40 50 60 Case temperature, TC (°C)
Far Field Pattern 1.0
Perpendicular 0.8
Relative intensity
Monitor current, IS (mA)
Threshold current, Ith (mA)
Threshold Current vs. Case Temperature 100
50
30 20
0 10 20 30 40 50 60 Case temperature, TC (°C)