首尔半导体 SSC 5050 STW8T16C(泰铭光电)
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The package design coupled with careful selection of component materials allow these products to perform with high reliability.
STW8T16C
Features
• Lead Frame type LED PKG size: 5.0*5.0 thickness 1.0mm
TZe-cPhonwiecralLEDDatXa10S4h9e0et
2. Characteristics of STW8T16C
1) Electro-Optical characteristics at 65mA
Parameter
Forward Voltage Reverse Voltage Luminous Intensity*[1] (3,700~8,200 K) Luminous Intensity*[1] (2,600~3,700 K)
ESD (HBM)
Symbol IF Pd Tj Topr Tstg
Value 100 315 125
-40 ~ +85 -40 ~ +100 ±5,000V HBM
Unit mA mW ºC ºC ºC V
Notes :
All measurements were made under the standardized environment of SSC.
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range.
[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be
Typ
-
0.9
9.0 (27.5)
8.2 (24.6)
(Ta=25℃, RH30%)
Max 3.3 1.2
-
-
Unit
V V cd (lm) cd (lm)
-
8,200
K
120
-
-
-
90
-
14
-
K/W
2) Absolute Maximum Ratings
Parameter Forward Current Power Dissipation*[3] Junction Temperature Operating Temperature Storage Temperature
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
1. Outline dimensions of STW8T16C
Package
Marking Top View
TZe-cPhonwiecralLEDDatXa10S4h9e0et
RoHS
Specification
SSC-STW8T16C
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
Bottom View
Side View
Notes : [1] All dimensions are in millimeters. [2] Scale : none [3] Undefined tolerance is ±0.1mm
Slug (Anode)
Circuit
Cathode 1
Anode 2
90mA 100mA
0.4315
0.4320
CIE X
0.4325Байду номын сангаас
0.4330
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
5) Relative Luminous Intensity vs. Junction Temperature, IF=65mA
ESD Protection Device
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
Material Structure
⑥
③②
Relative Light Output
1.0 0.8 0.6 0.4 0.2 0.300
45
60
75
90
105
120
Junction temperature Tj(OC)
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
Copper Alloy (Silver Plated) GaN on Sapphire Gold Wire +Phosphor
Heat-resistant Polymer -
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
3. Characteristic diagrams
1) Spectrum data
(IF=65mA, Ta=25℃, RH30%)
Relative output
4700~8200K
1.0
3700~4700K
2600~3700K
0.8
0.6
0.4
0.2
0.3000
400
500
600
700
800
Wavelength [nm]
Forward Current I [mA] F
100 90 80 70 60 50 40 30 20 10
2.5
2.6
2.7
2.8
2.9
3.0
3.1
Forward Voltage V [V] F
3) Forward Current vs. Relative Luminous Intensity, Ta=25℃
the product.
SSC-STW8T16C
* Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007
March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
aligned with the mechanical axis of the LED package.
[2] 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Care is to be taken that power dissipation does not exceed the absolute maximum rating of
0.325
0.302.0310 0.315 0.320 0.325 0.330 0.335 0.340 0.345 0.350 0.355 0.360
CIE X
CIE Y
0.410
0.405
0.400
TZe-cPhonwiecralLEDDatXa10S4h9e0et
6) Chromaticity Coordinate vs. Junction Temperature, IF=65mA
0.360
0.355
CIE Y
0.350 0.345 0.340 0.335 0.330
25 40 60 80 100 120
STW8T16C
Description
This surface-mount LED comes in standard package dimension. It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. The die is attached within the reflector cavity and the cavity is encapsulated by silicone.
• White colored SMT package • Pb-free Reflow Soldering Application • RoHS compliant
Applications
• Interior lighting • General lighting • Indoor and out door displays • Architectural / Decorative lighting
④ ⑤
Parts No. ① ② ③ ④ ⑤ ⑥
Name
LEAD FRAME Chip Source
Wire Encapsulation
Body Zener Diode
①
Description
Materials
Metal Blue LED
Metal Silicone Thermo Plastic
Si
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
[ Contents ]
1. Outline dimensions of STW8T16C 2. Characteristics of STW8T16C 3. Characteristic diagrams 4. Color & Binning 5. Bin Code Description 6. Labeling 7. Packing 8. Recommended solder pad 9. Soldering 10. Precaution for use 11. Handling of Silicone Resin LEDs
TZe-cPhonwiecralLEDDatXa10S4h9e0et
4) Chromaticity Coordinate vs. Forward Current, Ta=25℃
CIE Y
0.3600
0.3595
0.3590 0.3585 0.3580
50mA
60mA 65mA
0.3575 0.3570
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
2) Forward Voltage vs. Forward Current, Ta=25℃
Relative Luminous Intensity
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.00
10 20 30 40 50 60 70 80 90 100 SSC-STW8T16C
Forward Current I [mA]
F
March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
Correlated Color Temperature
Viewing Angle [2]
Color Rendering Index*
Thermal resistance (J to S)
Symbol VF VR Iv Iv
CCT 2Θ1/2
Ra RθJ-S
Min 2.8
-
-
2,600 80 -
Value
90mA 100mA
0.3565
0.3506.30420
0.3425
0.3430
0.3435 0.3440
CIE X
0.3445
0.3450
0.3455
CIE Y
0.3950 0.3945 0.3940 0.3935 0.3930 0.3925 0.3902.40305
0.4310
50mA
60mA 65mA
STW8T16C
Features
• Lead Frame type LED PKG size: 5.0*5.0 thickness 1.0mm
TZe-cPhonwiecralLEDDatXa10S4h9e0et
2. Characteristics of STW8T16C
1) Electro-Optical characteristics at 65mA
Parameter
Forward Voltage Reverse Voltage Luminous Intensity*[1] (3,700~8,200 K) Luminous Intensity*[1] (2,600~3,700 K)
ESD (HBM)
Symbol IF Pd Tj Topr Tstg
Value 100 315 125
-40 ~ +85 -40 ~ +100 ±5,000V HBM
Unit mA mW ºC ºC ºC V
Notes :
All measurements were made under the standardized environment of SSC.
LED’s properties might be different from suggested values like above and below tables if
operation condition will be exceeded our parameter range.
[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be
Typ
-
0.9
9.0 (27.5)
8.2 (24.6)
(Ta=25℃, RH30%)
Max 3.3 1.2
-
-
Unit
V V cd (lm) cd (lm)
-
8,200
K
120
-
-
-
90
-
14
-
K/W
2) Absolute Maximum Ratings
Parameter Forward Current Power Dissipation*[3] Junction Temperature Operating Temperature Storage Temperature
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
1. Outline dimensions of STW8T16C
Package
Marking Top View
TZe-cPhonwiecralLEDDatXa10S4h9e0et
RoHS
Specification
SSC-STW8T16C
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
Bottom View
Side View
Notes : [1] All dimensions are in millimeters. [2] Scale : none [3] Undefined tolerance is ±0.1mm
Slug (Anode)
Circuit
Cathode 1
Anode 2
90mA 100mA
0.4315
0.4320
CIE X
0.4325Байду номын сангаас
0.4330
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
5) Relative Luminous Intensity vs. Junction Temperature, IF=65mA
ESD Protection Device
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
Material Structure
⑥
③②
Relative Light Output
1.0 0.8 0.6 0.4 0.2 0.300
45
60
75
90
105
120
Junction temperature Tj(OC)
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
Copper Alloy (Silver Plated) GaN on Sapphire Gold Wire +Phosphor
Heat-resistant Polymer -
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
3. Characteristic diagrams
1) Spectrum data
(IF=65mA, Ta=25℃, RH30%)
Relative output
4700~8200K
1.0
3700~4700K
2600~3700K
0.8
0.6
0.4
0.2
0.3000
400
500
600
700
800
Wavelength [nm]
Forward Current I [mA] F
100 90 80 70 60 50 40 30 20 10
2.5
2.6
2.7
2.8
2.9
3.0
3.1
Forward Voltage V [V] F
3) Forward Current vs. Relative Luminous Intensity, Ta=25℃
the product.
SSC-STW8T16C
* Tolerance : VF :±0.1V, IV :±7%, Ra :±2, x,y :±0.007
March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
aligned with the mechanical axis of the LED package.
[2] 2Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Care is to be taken that power dissipation does not exceed the absolute maximum rating of
0.325
0.302.0310 0.315 0.320 0.325 0.330 0.335 0.340 0.345 0.350 0.355 0.360
CIE X
CIE Y
0.410
0.405
0.400
TZe-cPhonwiecralLEDDatXa10S4h9e0et
6) Chromaticity Coordinate vs. Junction Temperature, IF=65mA
0.360
0.355
CIE Y
0.350 0.345 0.340 0.335 0.330
25 40 60 80 100 120
STW8T16C
Description
This surface-mount LED comes in standard package dimension. It has a substrate made up of a molded plastic reflector sitting on top of a lead frame. The die is attached within the reflector cavity and the cavity is encapsulated by silicone.
• White colored SMT package • Pb-free Reflow Soldering Application • RoHS compliant
Applications
• Interior lighting • General lighting • Indoor and out door displays • Architectural / Decorative lighting
④ ⑤
Parts No. ① ② ③ ④ ⑤ ⑥
Name
LEAD FRAME Chip Source
Wire Encapsulation
Body Zener Diode
①
Description
Materials
Metal Blue LED
Metal Silicone Thermo Plastic
Si
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
[ Contents ]
1. Outline dimensions of STW8T16C 2. Characteristics of STW8T16C 3. Characteristic diagrams 4. Color & Binning 5. Bin Code Description 6. Labeling 7. Packing 8. Recommended solder pad 9. Soldering 10. Precaution for use 11. Handling of Silicone Resin LEDs
TZe-cPhonwiecralLEDDatXa10S4h9e0et
4) Chromaticity Coordinate vs. Forward Current, Ta=25℃
CIE Y
0.3600
0.3595
0.3590 0.3585 0.3580
50mA
60mA 65mA
0.3575 0.3570
SSC-STW8T16C March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
TZe-cPhonwiecralLEDDatXa10S4h9e0et
2) Forward Voltage vs. Forward Current, Ta=25℃
Relative Luminous Intensity
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.00
10 20 30 40 50 60 70 80 90 100 SSC-STW8T16C
Forward Current I [mA]
F
March 2013
서식번호 : SSC-QP-7-07-12 (Rev.01)
Correlated Color Temperature
Viewing Angle [2]
Color Rendering Index*
Thermal resistance (J to S)
Symbol VF VR Iv Iv
CCT 2Θ1/2
Ra RθJ-S
Min 2.8
-
-
2,600 80 -
Value
90mA 100mA
0.3565
0.3506.30420
0.3425
0.3430
0.3435 0.3440
CIE X
0.3445
0.3450
0.3455
CIE Y
0.3950 0.3945 0.3940 0.3935 0.3930 0.3925 0.3902.40305
0.4310
50mA
60mA 65mA