AA3021SESK, 规格书,Datasheet 资料

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SAN3021资料

SAN3021PDS038-SA2531/2-004 Rev. B 21-03-00This Application Note describes how to modify the standard application AN1500A to use a dynamic microphone instead of the standard electret microphone. Additionally, an application is shown, which uses the dynamic microphone as tone ringer.• Updating existing systems using dynamic handset microphone• No need for a piezo ringer when using the dynamic microphone as tone ringerTable of Contents1SCOPE.................................................................................................................................................................12KEY FEATURES .................................................................................................................................................13OTHER APPLICABLE DOCUMENTS AND PAPERS........................................................................................14REVISION STATUS.............................................................................................................................................15GENERAL DESCRIPTION. (26)HARDWARE CONFIGURATION (2)6.1U SING THE DYNAMIC MICROPHONE AS TONE RINGER (SCHEMATIC :A ).................................................................2 6.1.1Ringer part.............................................................................................................................................2 6.1.2Microphone amplifier part......................................................................................................................36.2A MPLIFIER FOR GENERAL PURPOSE APPLICATIONS (SCHEMATIC :B )...................................................................37 APPLICATION SCHEMATIC:.. (48)LIABILITY AND COPYRIGHT STATEMENT (5)Application Note AN1500A: SA2532K Single Chip Telephone Demo BoardSAN3021 Application Note (this document)SAN3021 SchematicRev. 1.1SA2531/2 Single Chip Telephone:Using dynamic microphoneas tone ringer1 Scope2 Key Features3 Other applicable documents and papers4 Revision status5 General descriptionDynamic handset microphones have been widely replaced by electret microphones, mainly because of higher output level, low EMC sensitivity and price issues. Therefore, the standard Single Chip Telephone application, AN1500 is based on using an electret handset microphone.However, there are situations where usage of a dynamic microphone is still desired, e.g.•when updating an existing design , using a dynamic handset microphone•when taking advantage of the higher speech quality of dynamic microphones•when using the dynamic microphone as tone ringer6 Hardware configurationGenerally, because of the lower output level of a dynamic microphone (≈10dB less than an electret microphone) the microphone signal must be amplified by a simple 10dB amplifier before it can be fed into the microphone inputs, M1 and M2 of the SA2531/2.In the following schematic, two basic considerations when using dynamic microphones are shown:1. A single ended circuit, which uses the dynamic microphone for both microphone and tone ringer.2. A differential circuit, which is fully balanced, to replace an electret microphone.6.1 Using the Dynamic Microphone as Tone Ringer (Schematic :A)6.1.1 Ringer partThe piezo tone ringer used in AN1500 can be replaced by a dynamic microphone, when close attention is paid to the following considerations :Since a maximum sound pressure is required in ringing mode, the maximum DC current and AC levelfor the type of dynamic microphone used must not be exceeded.To limit the output of the ringer amplifier Q4, the zener diode D4 should be reduced to 15V . R18 limits the output current, it can also be used to set the ringer volume.Since the microphone (= the ringer) is connected single ended to V DD, any noise on V DD would be amplified by the microphone amplifier, causing higher noise for the transmitted signal. Therefore, D6 and C10 are added to reference the microphone amplifier input to V SS (over C10) but at the same time keep the DC level above V DD in ringing mode.The ringer cannot be referenced to V SS, because it would discharge V DD during ringing!With the application shown, the anode of D6 will be V DD+0.7V, because during ringing V DD is supplied over the ringing capacitor. (not shown).6.1.2 Microphone AmplifierQ5 is a simple “classic” amplifier, which amplifies the single ended signal by ≈10dB. Gain can be adjusted by varying R21. R23 is the feedback resistor to set a stable DC bias point. R24 and R25 are setting the base voltage. The transistor type used (in this case BC549) should be a general purpose low noise transistor.The single ended signal is decoupled by C17. R26 is required to limit the input current to the amplifier during ringing.C15 and C16 are EMC capacitors to limit the bandwidth of the amplifier. Frequencies >10kHz are being attenuated.The amplifier is supplied by (the initial electret microphone supply) R20 and C14. C14 should be increased to 220µF. Since this supply is derived from the line output, there will be some small ripple from the transmitted signal at C14.In order not to form a positive feedback loop from LI over the microphone supply, Q5 and the internal microphone amplifier (M1/M2 to LI) , care must be taken to connect M1/M2 inputs in the correct manner as shown in the application.With this connection, a negative feedback loop is formed, rejecting any ripple on C14.Because of the unbalanced, single ended structure of this amplifier, its input is very sensitive. Therefore it is recommended to use this application only in one-piece telephones with shortest possible wires between microphone and amplifier !6.2 Amplifier for General Purpose Applications (Schematic :B)This amplifier is similar to the amplifier described in pt. 6.1, however the microphone is balanced (RR23B and RR26 = 2kΩ).Amplifier gain = RR21 / RR23B = 3:1 = 10dB.This application can directly replace an electret microphone. Because of the differential, balanced structure of the amplifier input , it is also suitable for longer distances between microphone and amplifier, e.g. corded handsets.SAN30214/57 Application schematic:元器件交易网元器件交易网SAN30218 Liability and Copyright StatementDisclaimer:The information contained in this document is confidential and proprietary to South African Micro-Electronic Systems (Pty) Ltd ("SAMES”) and may not be copied or disclosed to a third party, in whole or in part, without the express written consent of SAMES. The information contained herein is current as of the date of publication; however, delivery of this document shall not under any circumstances create any implication that the information contained herein is correct as of any time subsequent to such date. SAMES does not undertake to inform any recipient of this document of any changes in the information contained herein, and SAMES expressly reserves the right to make changes in such information, without notification,even if such changes would render information contained herein inaccurate or incomplete. SAMES makes no representation or warranty that any circuit designed by reference to the information contained herein, will function without errors and as intended by the designer.South African Micro-Electronic Systems (Pty) LtdP O Box 15888,33 Eland Street,Lynn East,Koedoespoort Industrial Area,0039Pretoria,Republic of South Africa,Republic of South AfricaTel: 012 333-6021Tel:Int +27 12 333-6021Fax: 012 333-3158Fax:Int +27 12 333-3158Web Site : http://www.sames.co.za。

Agilent U2300A Series USB模块多功能数据采集设备数据表说明书

AgilentU2300A Series USB Modular Multifunction Data Acquisition DevicesData SheetFeatures• Up to 3 MSa/s sampling rate for a single channel • Functions as astandalone or modular unit• Easy to use—plug-and- play and hot-swappable with Hi-Speed USB 2.0• Up to 384 channels when incorporated into U2781A Agilent modular instrument chassis• Easy-to-use bundledsoftware for quick setupand data logging to PC • 12-bit or 16-bit A/Dresolution• 24-bit programmabledigital input/output• Self-calibrationcapability• Compatible with a widerange of ApplicationDevelopmentEnvironments• USBTMC 488.2 standards IntroductionAgilent U2300A Series USB modularmultifunction data acquisition (DAQ)devices are a high performance PCdata acquisition solution. The U2300ASeries DAQ devices consist of twofamilies—basic multifunction DAQand high density multifunction DAQ.The basic multifunction DAQ familycomes in four models while the highdensity multifunction DAQ family ismade up of three models.The U2300A Series DAQ devicesapplications extend across industrialand education environments. TheDAQ device is well suited for researchand development, manufacturing anddesign validation engineers, whorequire measurement devices with fastsampling rate.High Sampling RateThe U2300A Series DAQ devices havesampling rate of up to 3 MSa/s for asingle channel. When multiplechannels are conﬁ gured, it cansample data up to 1 MSa/s. This fastsampling capability allows users toperform intermittent detection easily.This also makes it ideal when dealingwith high density analog input/outputsignals, especially with different inputranges and sampling requirements.Flexible Standalone orModular CapabilityThe U2300A Series DAQ devices areuniquely designed for the ﬂ exibilityof functioning as a standalone ormodular unit. When used with theU2781A modular instrument chassis,the number of channels can reach upto 384 channels.Ease of UseThe U2300A Series DAQ devices areequipped with Hi-Speed USB 2.0interface for easy setup, plug-and-play,and hot swappable connectivity. Itsease-of-use makes it ideal for theeducation environment. Simplifyingthis further is the AgilentMeasurement Manager software thatoffers a simple interface for quicksetup, conﬁ guration and measurementcontrol.Flexible System andControl OptionsPolling and continuous modeThe U2300A Series DAQ devices pro-vide two modes, the polling mode andthe continuous mode. The continuousmode has the ability to acquire datacontinuously once the trigger signal isreceived.Trigger sourcesU2300 Series offers immediate trigger (none), analog/external digital trigger, System Synchronous Interface (SSI)/star trigger and master/slave trigger sources. All these triggeroptions give you the capability to conﬁ gure trigger sources during A/D and D/A operations. Master/slave trigger and SSI/star trigger are rec-ommended when USB modules are slotted into the Agilent U2781A USB modular instrument chassis.Predeﬁ ned function generatorThe two analog output channelsoffered does not only provide DC voltage but also are capable of generating common and predeﬁ ned waveforms such as sinusoid wave, square wave, triangle wave, sawtooth wave and noise wave.Arbitrary WaveformU2300A Series supports arbitrary waveform, which allows user to generate arbitrary waveform via Agilent Measurement Manager application software or SCPI command.Burst modeBurst mode is an enhancement feature of U2300 Series DAQ that enable the DAQ to simulate in simultaneous mode for analog input acquisition. This enable users to perform sampling measurement up to the highest speedof the DAQ capability.Figure 1. Agilent Measurement Manager application software user interface Compatible with wide range of Application Development EnvironmentsThe Agilent U2300A DAQ devices are compatible with a wide range ofApplication Development Environments. This minimizes all the time taken by R&D and manufacturing engineers to use the devices in different software environments as they can program directly using SCPI commands.Listed below are the popular development environments and tools that the DAQ device is compatible with:• Agilent VEE and Agilent T&M Toolkit• Microsoft Visual , C/C++ and Visual Basic 6• LabVIEW• MATLAB® (Agilent U2300A Adaptor is available at /ﬁ nd/U2300A) For more information, please visit /ﬁ nd/U2300A.Product Characteristics and General Speciﬁ cations REMOTE INTERFACE• Hi-Speed USB 2.0• USBTMC class devicePOWER REQUIREMENT• +12 VDC (TYPICAL)• 2 A (MAX) input rated currentPOWER CONSUMPTION+12 VDC, 550 mA maximumOPERATING ENVIRONMENT• Operating temperature from 0 °C to +55 °C• Relative humidity at 15% to 85% RH (non-condensing)• Altitude up to 2000 meters• Pollution Degree 2• For indoor use onlySTORAGE COMPLIANCE–20 °C to 70 °CSAFETY COMPLIANCECertiﬁ ed with:• IEC 61010-1:2001/EN 61010-1:2001 (2nd Edition)• USA: UL61010-1: 2004• Canada: CSA C22.2 No.61010-1:2004EMC COMPLIANCE• IEC/EN 61326-1 1998• CISPR 11: 1990/EN55011:1991, Class A, Group 1• CANADA: ICES-001: 1998• Australia/New Zealand: AS/NZS 2064.1SHOCK AND VIBRATIONTested to IEC/EN 60068-2IO CONNECTOR68-pin female VHDCI TypeDIMENSION (WxDxH)• 120.00 mm x 182.40 mm x 44.00 mm (with plastic casing)• 105.00 mm x 174.54 mm x 25.00 mm (without plastic casing)WEIGHT• 565 g (with plastic casing)• 400 g (without plastic casing)WARRANTYThree yearsSystem RequirementsPROCESSOR1.6 GHz Pentium IV or higherOPERATING SYSTEMOne of the following Microsoft® Windows® versions:• Windows XP Professional or Home Edition (Service Pack 1 or later)• Windows 2000 Professional (Service Pack 4 or later)BROWSERMicrosoft Internet Explorer 5.01 or higherAVAILABLE RAM512 MB or higher recommendedHARD DISK SPACE1 GBPREREQUISITES• Agilent IO Libraries Suite 14.2[1] or higher• Agilent T&M Toolkit 2.1 Runtime version[2]• Microsoft .NET Framework version 1.0 and 2.0[2][1] Available in Agilent Automation-Ready CD[2] Bundled with Agilent Measurement Manager software application installer Product Outlook and Dimension Front ViewRear ViewStandard Shipped Items• AC/DC Power Adapter• Power Cord• USB Extension Cable• L-Mount Kit (used with modularinstrument chassis)• Agilent U2300A Series DataAcquisition Devices and AgilentMeasurement Manager Quick Start Guide• Agilent USB Modular InstrumentU2300A & U2700A Series ProductReference CD-ROM• Agilent Automation-Ready CD (containsthe Agilent IO Libraries Suite)• Certiﬁ cate of CalibrationOptional Accessories• U2901A Terminal block and SCSI-II 68-pinconnector with 1-meter cable• U2902A Terminal block and SCSI-II 68-pinconnector with 2-meter cable• U2718A 6-slot USB modular instrumentchassisElectrical Speciﬁ cations[1] System Scynchronous Interface (SSI) and star trigger commands are used when the modular device is incorporated into the chassis.[2] Maximum external reference voltage for analog output channels (AO_EXT_REF) is ±10 V.[3] 20 minutes warm-up time is recommended.[1] System Synchronous Interface (SSI) and star trigger commands are used when the modular device is incorporated into the chassis.[2] Maximum external reference voltage for analog output channels (AO_EXT_REF) is ±10 V.[3] 20 minutes warm-up time is recommended.Electrical Measurement Speciﬁ cations[1] Speciﬁ cations are for 20 minutes of warm-up time, calibration temperature at 23 °C and input range of ±10 V.[2] Speciﬁ cations are based on the following test conditions.Dynamic Range Test Model Number Test Conditions (DUT setting at ±10 V bipolar)• –3 dB small signal bandwidth • 1% THD large signal bandwidth U2351AU2352ASampling Rate:Input voltage:• –3 dB small signal bandwidth• 1% THD large signal bandwidth250 kSa/s10% FSRFSR –1 dB FS U2353AU2354ASampling Rate:Input voltage:• –3 dB small signal bandwidth• 1% THD large signal bandwidth500 kSa/s10% FSRFSR –1 dB FS[3] Speciﬁ cations are based on the following test conditions.Dynamic Range Test Model Number Test Conditions (DUT setting at ±10 V bipolar)SFDR, THD, SINAD, SNR, ENOB U2351AU2352ASampling Rate:Fundamental Frequency:Number of points:Fundamental input voltage:250 kSa/s2.4109 kHz8192FSR –1 dB FS U2353AU2354ASampling Rate:Fundamental Frequency:Number of points:Fundamental input voltage:500 kSa/s4.974 kHz16384FSR –1 dB FS[1] Speciﬁ cations are for 20 minutes of warm-up time, calibration temperature at 23 °C and input range of ±10 V.[2] Speciﬁ cations are based on the following test conditions.Dynamic Range Test Model Number Test Conditions (DUT setting at ±10 V bipolar)• –3 dB small signal bandwidth • 1% THD large signal bandwidth U2355A Sampling Rate:Input voltage:• –3 dB small signal bandwidth• 1% THD large signal bandwidth250 kSa/s10% FSRFSR –1 dB FS U2356A Sampling Rate:Input voltage:• –3 dB small signal bandwidth• 1% THD large signal bandwidth500 kSa/s10% FSRFSR –1 dB FS U2331A Sampling Rate:Input voltage:• –3 dB small signal bandwidth• 1% THD large signal bandwidth3 MSa/s10% FSRFSR –1 dB FS[3] Speciﬁ cations are based on the following test conditions.Dynamic Range Test Model Number Test Conditions (DUT setting at ±10 V bipolar)• –3 dB small signal bandwidth • 1% THD large signal bandwidth U2355A Sampling Rate:Fundamental Frequency:Number of points:Fundamental input voltage:250 kSa/s2.4109 kHz8192FSR –1 dB FS U2356A Sampling Rate:Fundamental Frequency:Number of points:Fundamental input voltage:500 kSa/s4.974 kHz16384FSR –1 dB FS U2331A Sampling Rate:Fundamental Frequency:Number of points:Fundamental input voltage:3 MSa/s29.892 kHz65536FSR –1 dB FSDC CharacteristicsAccuracy Speciﬁ cationsAnalog Input1. The above speciﬁ cations are typical for 23°C.2. Speciﬁ cations are for 20 minutes warm-up and self calibration.3. The measurements are calculated with 100 points averaging of data.[1] Offset error is measured at midscale of full scale range.[2] Accuracy = +/– [% of |(Gain Error / (Measured value – Midscale of FSR))| + Offset Error]1. The above speciﬁ cations are typical for 23°C.2. Speciﬁ cations are for 20 minutes warm-up and self calibration.3. The measurements are calculated with 100 points averaging of data.[1] Offset error is measured at midscale of full scale range.[2] Accuracy = +/– [% of |(Gain Error / (Measured value – Midscale of FSR))| + Offset Error] Analog Output1. The above speciﬁ cations are typical for 23°C.2. Speciﬁ cations are for 20 minutes warm-up and self calibration.[1] Offset error is measured at 0 V.[2] Accuracy = +/– [% of |Gain Error/Output value| + offset voltage]Product speciﬁ cations and descriptions in this document subject to change without notice.© Agilent Technologies, Inc. 2006, 2007Printed in USA, April 30, 20075989-5626EN。

SI2302-TP;中文规格书,Datasheet资料

Figure 6. Body Diode Forward Voltage Variation with Source Current
Revision: A
/

3 of 5
2011/01/01
VGS, Gate to Source Voltage (V) ID, Drain Current (A)
VTH, Normalized Gate-Source Threshold Voltage
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
IS, Source-drain current (A)
ID, Drain Current (A)
SI2302
10 25 C
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IDM VGS
PD R©JA
TJ
TSTG
Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage
MCC
TM
Micro Commercial Components
5 VDS=10V ID=3.6A
4
3
2
1
0
0
2
4
6
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDD
RL VIN
D
VOUT
VGS
RGEN G
S
Figure 9. Switching Test Circuit

74271112S;中文规格书,Datasheet资料

7.1 7.0 6.02012-06-272012-04-302008-01-03SStSStSMuSStSMu-Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm] Additional FeaturesSafety key to lock/ unkock STAR-CLIP Fixation74271 7427711D2 General Properties:Ferrite core Ferrite core Ferrite core Plastic housing Plastic housing Test cable Test cablePropertiesMaterial Initial permeability Curie temperatureColourFlammability ClassificationApplicable cable Applicable cable lengthµi T CValue 4 W 620620150Black UL94-V0AWG2690Unit°Cmm Tol.typ.typ.F Typical Impedance Characteristics:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-STAR TECof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the component surface has to be avoided.The packaging of the product is to encase the needed humidity of the plastic housing. To ensure the humidity level, the products have to be stored in this delivered packaging. If not, the products are losing their humidity. In this case you can re-condition the components according to the internal standard WE1883 to ensure the necessary humidity in the plastic.To ensure the operating mode of the product, the ambient temperature at processing (when the part will be mounted on the cable) has to be in the range of 15 to 25 °C.Before mounting, the part should be stored for one hour in this condition.The responsibility for the applicability of customer specific products and the use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Direct mechanical impact to the product and the forcible closing of this shall be prevented as the ferrite material of the ferrite body or the pla-stic housing could flake or in the worst case it could break.Product specific:Follow all instructions mentioned in the datasheet, especially:•The cable diameter must be pointed out, otherwise no warranty will be sustained.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 74271112S。

AMIS30621AUA;中文规格书,Datasheet资料

AMIS-30621Micro-Stepping Motor Driver INTRODUCTIONThe AMIS−30621 is a single−chip micro−stepping motor driver with position controller and control/diagnostic interface. It is ready to build dedicated mechatronics solutions connected remotely with a LIN master.The chip receives positioning instructions through the bus and subsequently drives the motor coils to the desired position. The on−chip position controller is configurable (OTP or RAM) for different motor types, positioning ranges and parameters for speed, acceleration and deceleration. The AMIS−30621 acts as a slave on the LIN bus and the master can fetch specific status information like actual position, error flags, etc. from each individual slave node. The chip is implemented in I2T100 technology, enabling both high voltage analog circuitry and digital functionality on the same chip. The AMIS−30621 is fully compatible with the automotive voltage requirements.PRODUCT FEATURESMotordriver•Micro−Stepping Technology•Peak Current Up to 800 mA•Fixed Frequency PWM Current−Control•Automatic Selection of Fast and Slow Decay Mode•No External Fly−Back Diodes Required•Compliant with 14 V Automotive Systems and Industrial Systems Up to 24 VController with RAM and OTP Memory•Position Controller•Configurable Speeds and Acceleration•Input to Connect Optional Motion SwitchLIN Interface•Physical Layer Compliant to LIN rev. 2.0. Data−Link Layer Compatible with LIN Rev. 1.3 (Note 1)•Field−Programmable Node Addresses •Dynamically Allocated Identifiers •Diagnostics and Status InformationProtection•Overcurrent Protection•Undervoltage Management•Open−Circuit Detection•High Temperature Warning and Management •Low Temperature Flag•LIN Bus Short−Circuit Protection to Supply and Ground •Lost LIN Safe Operation Power Saving•Powerdown Supply Current < 50 m A•5 V Regulator with Wake−up on LIN ActivityEMI Compatibility•LIN Bus Integrated Slope Control•HV Outputs with Slope Control •These are Pb−Free Devices1.Minor exceptions to the conformance of the data−link layer to LIN rev. 1.3.See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSOIC−203 & 7 SUFFIXCASE 751AQNQFP−326 SUFFIXCASE 560AA*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.APPLICATIONSThe AMIS−30621 is ideally suited for small positioning applications. Target markets include: automotive (headlamp alignment, HV AC, idle control, cruise control), industrial equipment (lighting, fluid control, labeling, process control, XYZ tables, robots...) and building automation (HV AC,surveillance, satellite dish, renewable energy systems). Suitable applications typically have multiple axes or require mechatronic solutions with the driver chip mounted directly on the motor.Table 1. ORDERING INFORMATIONPart No.Peak Current UV*Package Shipping†AMIS30621C6213G800 mA High SOIC−20(Pb−Free)Tube / TrayAMIS30621C6213RG800 mA High Tape & ReelAMIS30621C6216G800 mA Low NQFP−32 (7 x 7 mm)(Pb−Free)Tube / TrayAMIS30621C6216RG800 mA Low Tape & ReelAMIS30621C6217G**800 mA Low SOIC−20(Pb−Free)Tube / TrayAMIS30621C6217RG**800 mA Low Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.*UV undervoltage lock out levels: see DC Parameters UV1 & UV2 (Stop Voltage thresholds).** For prodcut versions AMIS30621C6217G and AMIS30621C6217RG the Ihold0 bit in OTP is programmed to ‘1’.QUICK REFERENCE DATATable 2. ABSOLUTE MAXIMUM RATINGSSymbol Parameter Min Max UnitV BB, VHW2, VSWI Supply voltage, Hardwired Address and SWI Pins−0.3+40(Note 1)VV lin Bus input voltage−40+40VT J Junction temperature range (Note 2)−50+175°CT st Storage temperature−55+160°CV esd Human Body Model Electrostatic discharge voltage on LINpin (Note 3)−4+4kVHuman Body Model Electrostatic discharge voltage on otherpins (Note 3)−2+2kV CDM Electrostatic discharge voltage on other pins (Note 4)−500+500VStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.For limited time: V BB < 0.5 s, SWI and HW2 pins < 1.0 s.2.The circuit functionality is not guaranteed.3.Human Body Model according to MIL−STD−883 Method 3015.7, measured on SOIC devices, and according to AEC−Q100:EIA−JESD22−A114−B (100 pF via 1.5 k W) measured on NQFP device.4.CDM according to EOS_ESD−DS5.3−1993 (draft)−socketed mode, measured on SOIC devices, and according to AEC−Q100:EIA−JESD22−A115−A measured on NQFP devices.Table 3. OPERATING RANGESSymbol Parameter Min Max UnitV BB Supply voltage+6.5+29VT J Operating temperature range (Note 5)−40+165°C5.Note that the thermal warning and shutdown will get active at the level specified in the “DC Parameters”.No more than 100 cumulated hoursin life time above T tw.Table of ContentsGeneral Description 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Features 1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Applications 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering Information 2. . . . . . . . . . . . . . . . . . . . . . . . . . . Quick Reference Data 2. . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Ratings 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Block Diagram 3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Description 4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Thermal Resistance 5. . . . . . . . . . . . . . . . . . . . .DC Parameters 6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Parameters 8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Application 9. . . . . . . . . . . . . . . . . . . . . . . . . . . . Positioning Parameters 10. . . . . . . . . . . . . . . . . . . . . . . . Structural Description 13. . . . . . . . . . . . . . . . . . . . . . . . . Functions Description 14. . . . . . . . . . . . . . . . . . . . . . . . . Lin Controller 33. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LIN Application Commands 42. . . . . . . . . . . . . . . . . . . . Package Outline 57. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figure 1. Block DiagramTSTLINMOTXP MOTXNHW[2:0]MOTYP MOTYNXP VBB SWI NC HW0XP VBB VBB CPNCPP VCP YN VBB YN VBB VBB YPXNGND GNDXNYPGNDGNDHW1VDDGNDTSTLINHW2GNDNCHW0GND SWI GND HW1MOTXP VBB VDD GND GND MOTXN MOTYP MOTYN TST LIN HW2CPN CPPVBB VCPFigure 2. SOIC −20 and NQFP −32 Pin −outNQFP −32Table 4. PIN DESCRIPTIONPin Name Pin DescriptionSOIC −20NQFP −32HW0Bit 0 of LIN −ADD To be Tied to GND or V DD18HW1Bit 1 of LIN −ADD29V DD Internal supply (needs external decoupling capacitor)310GND Ground, heat sink4,7,14,1711, 14, 25, 26, 31, 32TST Test pin (to be tied to ground in normal operation)512LIN LIN −bus connection 613HW2Bit 2 LIN −ADD815CPN Negative connection of pump capacitor (charge pump)917CPP Positive connection of pump −capacitor (charge pump)1018VCP Charge −pump filter −capacitor 1119V BB Battery voltage supply 12,193, 4, 5, 20, 21, 22MOTYN Negative end of phase Y coil 1323, 24MOTYP Positive end of phase Y coil 1527, 28MOTXN Negative end of phase X coil 1629, 30MOTXP Positive end of phase X coil 181, 2SWI Switch input206NCNot connected (to be tied to ground)7, 16PACKAGE THERMAL RESISTANCEThe AMIS −30621 is available in SOIC −20 and optimized NQFP32 packages. For cooling optimizations, the NQFP has an exposed thermal pad which has to be soldered to the PCB ground plane. The ground plane needs thermal vias to conduct the head to the bottom layer. Figures 3 and 4 give examples for good power distribution solutions.For precise thermal cooling calculations the major thermal resistances of the devices are given. The thermal media to which the power of the devices has to be given are:•Static environmental air (via the case)•PCB board copper area (via the device pins and exposed pad)The thermal resistances are presented in Table 5: DC Parameters.The major thermal resistances of the device are the Rth from the junction to the ambient (Rthja) and the overall Rth from the junction to the leads (Rthjp).The NQFP device is designed to provide superior thermal performance. Using an exposed die pad on the bottom surface of the package, is mainly contributing to this performance. In order to take full advantage of the exposed pad, it is most important that the PCB has features to conduct heat away from the package. A thermal grounded pad with thermal vias can achieve this.In below table, one can find the values for the Rthja and Rthjp, simulated according to the JESD −51standard:Package RthJunction −to −Leads and Exposed Pad (Rthjp)RthJunction −to −Leads(Rthjp)RthJunction −to −AmbientRthja 1S0PRthJunction −to −AmbientRthja 2S2PSOIC −20 196239NQFP −320.956030The Rthja for 2S2P is simulated conform to JESD −51 as follows:•A 4−layer printed circuit board with inner power planes and outer (top and bottom) signal layers is used •Board thickness is 1.46 mm (FR4 PCB material)•The 2 signal layers: 70 m m thick copper with an area of 5500 mm2 copper and 20% conductivity•The 2 power internal planes: 36 m m thick copper with an area of 5500 mm 2 copper and 90% conductivityThe Rthja for 1S0P is simulated conform to JESD −51 as follows:•A 1−layer printed circuit board with only 1 layer •Board thickness is 1.46 mm (FR4 PCB material)•The layer has a thickness of 70 m m copper with an area of 5500 mm 2 copper and 20% conductivityFigure 3. Example of SOIC −20 PCB Ground Plane Layout (Preferred Layout at Top and Bottom)Figure 4. Example of NQFP −32 PCB Ground Plane Layout (Preferred Layout at Top and Bottom)DC PARAMETERSThe DC parameters are guaranteed over temperature and V BB in the operating range, unless otherwise specified. Convention: currents flowing into the circuit are defined as positive.Table 5. DC PARAMETERSSymbol Pins Parameter Test Conditions Min Typ Max Unit MOTORDRIVERI MSmax,PeakMOTXPMOTXNMOTYPMOTYN Max current through motorcoil in normal operationV BB = 14 V800mAI MSmax,RMS Max RMS Current ThroughCoil in Normal OperationV BB = 14 V570mAI MSabs Absolute Error on Coil Current(Note 6)V BB = 14 V−1010%I MSrel Matching of X and Y CoilCurrentsV BB = 14 V−707%R DS(on)On Resistance for Each MotorPin at I MSmax (Note 7)V BB = 12 V, T J = 50°C0.501W V BB = 8 V, T J = 50°C0.551W V BB = 12 V, T J = 150°C0.701W V BB = 8 V, T J = 150°C0.851WI MSL Pull down current HiZ Mode, V BB = 7.7 V0.4 2.2mA LIN TRANSMITTERI bus_offLIN Dominant State, Driver Off V bus = 0 V, V BB = 8 V and 18 V−1mAI bus_off Recessive State, Driver Off V bus = V bat,V BB = 8 V and 18 V20m A I bus_lim Current Limitation V BB = 8 V and 18 V5075130mA R slave Pullup Resistance V BB = 8 V and 18 V203047k W LIN RECEIVERV bus_domLIN Receiver Dominant State V BB = 8 V and 18 V00.4 * V BB VV bus_rec Receiver Recessive State V BB = 8 V and 18 V0.6 * V BB V BB V V bus_hys Receiver Hysteresis V BB = 8 V and 18 V0.05 * V BB0.175 * V BB V THERMAL WARNING AND SHUTDOWNT tw Thermal warning138145152°C T tsd Thermal shutdown(Notes 8 and 9)T tw + 10°CT low Low temperature warning(Note 9)T tw− 152°C SUPPLY AND VOLTAGE REGULATORV BBOTPV BB Supply voltage for OTPzapping (Note 10)9.010.0VUV1Stop voltage high threshold Product versions with low UV;See Ordering Information7.78.38.9V UV2Stop voltage low threshold7.07.58.0V UV1Stop voltage high threshold Product versions with high UV;See Ordering Information8.89.39.8V UV2Stop voltage low threshold8.18.58.9V I bat Total current consumption Unloaded outputsV BB = 29 V1 3.5010.0mAI bat_s Sleep mode currentconsumptionV BB = 8 V and 18 V40100m AV DDV DD Regulated internal supply(Note 11)8 V < V BB < 29 V 4.755 5.25VV DDReset Digital supply reset level @powerdown (Note 12)4.5VI DDLim Current limitation Pin shorted to groundV BB = 14 V40mATable 5. DC PARAMETERSSymbol UnitMaxTypMinTest ConditionsParameterPinsSWITCH INPUT AND HARDWIRE ADDRESS INPUTRt_OFFSWI HW2Switch OPEN Resistance(Note 13)10k WRt_ON Switch ON Resistance(Note 13)Switch to GND or V BB2k WV BB_sw V BB range for guaranteedoperation of SWI and HW2629VI lim_sw Current limitation Short to GND or V batV BB = 29 V45mA HARDWIRED ADDRESS INPUTS AND TEST PINV highHW0HW1 TST Input level high V BB = 14 V0.7 * V DD VV low Input level low V BB = 14 V0.3 * V DD V HW hyst Hysteresis V BB = 14 V0.075 * V DD V CHARGE PUMPV CPVCP Output voltage7 V < V BB v 14 V 2 * V BB−2.5V14 V < V BB V BB + 10V BB + 15VC buffer External buffer capacitor220470nF C pump CPP CPN External pump capacitor220470nF PACKAGE THERMAL RESISTANCE VALUESRth ja SO Thermal resistancejunction−to−ambient (2S2P)Simulated conform JEDECJES.D5139K/WRth jp SO Thermal resistancejunction−to−leads19K/WRth ja NQ Thermal resistancejunction−to−ambient (2S2P)30K/WRth jpNQ Thermal resistancejunction−to−leads andexposed pad0.95K/W6.Tested in production for 800 mA, 400 mA, 200 mA and 100 mA current settings for both X and Y coil.7.Based on characterization data.8.No more than 100 cumulated hours in life time above T tw.9.Thermal shutdown and low temperature warning are derived from thermal warning. Guaranteed by design.10.A buffer capacitor of minimum 100 m F is needed between V BB and GND. Short connections to the power supply are recommended.11.Pin V DD must not be used for any external supply12.The RAM content will not be altered above this voltage.13.External resistance value seen from pin SWI or HW2, including 1 k W series resistor. For the switch OPEN, the maximum allowed leakagecurrent is represented by a minimum resistance seen from the pin.AC PARAMETERSThe AC parameters are guaranteed for temperature and V BB in the operating range unless otherwise specified.The LIN transmitter and receiver physical layer parameters are compliant to LIN rev. 2.0 & 2.1.Table 6. AC PARAMETERSSymbol Pins Parameter Test Conditions Min Typ Max Unit POWERUPT pu Powerup Time Guaranteed by Design10ms INTERNAL OSCILLATORf osc Frequency of Internal Oscillator V BB = 14 V 3.6 4.0 4.4MHz LIN TRANSMITTER CHARACTERISTICS ACCORDING TO LIN V2.0 & V2.1D1LIN Duty Cycle 1 = t Bus_rec(min)/(2 x t Bit); See Figure 5THRec(max)= 0.744 x V BBTHDom(max)= 0.581 x V BB;V BB = 7.0 V...18 V; t Bit =50 m s0.396D2Duty Cycle 2 = t Bus_rec(max)/(2 x t Bit); See Figure 5THRec(min)= 0.284 x V BBTHDom(min)= 0.422 x V BB;V BB = 7.6 V...18 V;t Bit = 50 m s0.581LIN RECEIVER CHARACTERISTICS ACCORDING TO LIN V2.0 & V2.1trx_pdrLIN Propagation delay bus dominantto RxD = LowV BB = 7.0 V & 18 V;See Figure 56m strx_pdf Propagation delay bus recess-ive to RxD = High V BB = 7.0 V & 18 V;See Figure 56m strx_sym Symmetry of receiver propaga-tion delaytrx_pdr – trx_pdf−2+2m s SWITCH INPUT AND HARDWIRE ADDRESS INPUTT sw SWIHW2Scan pulse period (Note 14)V BB = 14 V1024m sT sw_on Scan pulse duration (Note 14)V BB = 14 V64m s MOTORDRIVERF pwmMOTxx PWM frequency (Note 14)182022.0kHzT brise Turn−on transient time Between 10% and 90%V BB = 14 V 150nsT bfall Turn−off transient time140ns T stab Run current stabilization time(Note 14)1/Vmin s CHARGE PUMPf CP CPNCPP Charge pump frequency(Note 14)V BB = 14 V250kHz14.Derived from the internal oscillatorFigure 5. Timing Diagram for AC Characteristics According to LIN 2.0 & 2.1LINtRxD TxDttTH Rec(max)TH Dom(max)TH Rec(min)TH Dom(min)TYPICAL APPLICATIONFigure 6. Typical Application Diagram for SO device.LIN busV BATConnect to V BAT or GND Connect to V BAT or GND15.All resistors are ±5%, 1/4 W16.C 1, C 2 minimum value is 2.7 nF, maximum value is 10 nF17.Depending on the application, the ESR value and working voltage of C 7 must be carefully chosen 18.C 3 and C 4 must be close to pins V BB and GND19.C 5 and C 6 must be as close as possible to pins CPN, CPP , VCP , and V BB to reduce EMC radiation 20.C 9 must be a ceramic capacitor to assure low ESR21.C 10 is placed for EMC reasons; value depends on EMC requirements of the applicationPOSITIONING PARAMETERSStepping ModesOne of four possible stepping modes can be programmed:•Half−stepping•1/4 micro−stepping•1/8 micro−stepping•1/16 micro−stepping Maximum VelocityFor each stepping mode, the maximum velocity Vmax can be programmed to 16 possible values given in the table below.The accuracy of Vmax is derived from the internal oscillator. Under special circumstances it is possible to change the V max parameter while a motion is ongoing. All 16 entries for the Vmax parameter are divided into four groups. When changing Vmax during a motion the application must take care that the new Vmax parameter stays within the same group.Table 7. MAXIMUM VELOCITY SELECTION TABLEVmax indexVmax(full step/s)Group Stepping modeHex Dec Half−stepping(half−step/s)1/4thMicro−stepping(micro−step/s)1/8thMicro−stepping(micro−step/s)1/16thMicro−stepping(micro−step/s)0099A197395790157911136B 273546109121822216733466813352670 3319739579015793159 4421342585117013403 5522845691218233647 662434869731945389177273C 54610912182436488303607121324264852 99334668133526705341 A10364729145729145829 B11395790157931596317 C12456912182336477294D13546D 1091218243648728E1472914572914582911658 F1597319453891778215564分销商库存信息: ONSEMIAMIS30621AUA。

AA3021SYSK, 规格书,Datasheet 资料

DATE: APR/13/2011 DRAWN: J.Yu
PAGE: 5 OF 6 ERP: 1201006780
芯天下--/
PACKING & LABEL SPECIFICATIONS
AA3021SYSK
SPEC NO: DSAL0859 APPROVED: WYNEC
4.1. The outer diameter of the SMD pickup nozzle should not exceed the size of the LED to prevent air leaks. The inner diameter of the nozzle should be as large as possible. 4.2. A pliable material is suggested for the nozzle tip to avoid scratching or damaging the LED surface during pickup. 4.3. The dimensions of the component must be accurately programmed in the pick-and-place machine to insure precise pickup and avoid damage during production.
Recommended Soldering Pattern (Units : mm; Tolerance: ± 0.1)
Reel Dimension
Tape Dimensions (Units : mm)
SPEC NO: DSAL0859 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu

3SK231中文资料

DATA SHEET MOS FIELD EFFECT TRANSISTOR3SK231RF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDDATA SHEETDocument No. P10588EJ2V0DS00 (2nd edition)(Previous No. TC-2283)Date Published March 1997 N Printed in Japan1993©FEATURES•Low Noise Figure NF = 2.0 dB TYP. (@ = 900 MHz)•High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)•Enhancement Typ.•Suitable for use as RF amplifier in UHF TV tuner.•Automatically Mounting : Embossed Type Taping•Small Package : 4 Pins Mini Mold Package. (SC-61)ABSOLUTE MAXIMUM RATINGS (T A = 25 C)Drain to Source Voltage V DSX 18V Gate1 to Source Voltage V G1S 8 ( 10)*V Gate2 to Source Voltage V G2S 8 ( 10)*V Gate1 to Drain Voltage V G1D 18V Gate2 to Drain Voltage V G2D 18V Drain CurrentI D 25mA Total Power Dissipation P D 200mW Channel Temperature T ch 125 C Storage Temperature T stg55 to +125C*R L 10 kPRECAUTION :Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltages or fields.PACKAGE DIMENSIONS(Unit: mm)PIN CONNECTIONS 1.2.3.4.Source Drain Gate 2Gate 15°5°5°5°0 t o 0.10.82.9±0.2(1.8)(1.9)0.950.851.1+0.2−3.10.16+0.1−0.060.44132+0.1−0.052.8+0.2−0.31.5+0.2−0.10.6+0.1−0.050.4+0.1−0.050.4+0.1−0.05ELECTRICAL CHARACTERISTICS (T A = 25 C)CHARACTERISTIC SYMBOL MIN.TYP.MAX.UNIT TEST CONDITIONSDrain to Source Breakdown Voltage BV DSX18V V G1S = V G2S = 2 V, I D = 10 ADrain Current I DSx0.0110.0mA V DS = 6 V, V G2S = 4.5 V, V G1S = 0.75 V Gate1 to Source Cutoff Voltage V G1S(off) 1.0+1.0V V DS = 6 V, V G2S = 3 V, I D = 10 A Gate2 to Source Cutoff Voltage V G2S(off)+0.6+1.1+1.6V V DS = 6 V V G1S = 3 V, I D = 10 A Gate1 Reverse Current I G1SS 20nA V DS = V G2S = 0 V, V G1S = 8 VGate2 Reverse Current I G2SS 20nA V DS = V G1S = 0 V, V G2S = 8 V Forward Transfer Admittance y fs 1519.524mS V DS = 6 V, V G2S = 4.5 V, I D = 10 mAf = 1 kHzInput Capacitance C iss 1.0 1.5 2.0pF V DS = 6 V, V G2S = 4.5 V, I D = 10 mA Output Capacitance C oss0.7 1.0 1.3pF f = 1 MHzReverse Transfer Capacitance C rss0.0150.03pFPower Gain G ps14.017.521.0dB V DS = 6 V, V G2S = 4.5 V, I D = 10 mA Noise Figure NF1 2.0 3.0dB f = 900 MHzI DSX ClassificationRank U1C U1DMarking U1C U1DI DSX (mA)0.01 to 4.0 2.0 to 10.023CHARACTERISTICS CURVE (T A = 25 C)40030020010025201510504032241680504030201025201510502.52.01.51.00.50255075100125510-101234-1123448121620 1.0 2.0 3.0 4.0 5.0TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURET A -Ambient Temperature-°C P T -T o t a l P o w e r D i s s i p a t i o n -m WI D -D r a i n C u r r e n t -m A|y f s |-F o r w a r d T r a n s f e r A d m i t t a n c e -m SI D -D r a i n C u r r e n t -m A|y f s |-F o r w a r d T r a n s f e r A d m i t t a n c e -m SC i s s -I n p u t C a p a c i t a n c e -p FV DS -Drain to Source Voltage-V DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEDRAIN CURRENT vs.GATE1 TO SOURCE VOLTAGEFORWARD TRANSFER ADMITTANCE vs.GATE1 TO SOURCE VOLTAGEFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTINPUT CAPACITANCE vs.GATE2 TO SOURCE VOLTAGEV G1S -Gate1 to Source Voltage-V V G1S -Gate1 to Source Voltage-V I D -Drain Current-mA V G2S -Gate2 to Source Voltage-VV G2S = 4.5 VV G1S = 3 V2.5V 2.0V 1.5V 1.0V 0.5VV DS = 6 VV DS = 6 V f = 1 KHzV DS = 6 V f = 1 KHzV G2S = 3.5 V V G2S = 5 V3.0 V4 V3 V2 VV G2S = 6 V5 V3 V2 V 4 V5 V 2.5 V2.0 V1.5 VFree AirI D = 10 mA (at V DS = 6 V V G2S = 4.5 V)f = 1 MHz43SK2312.52.01.51.00.501.02.03.04.05.0C o s s -O u t p u t C a p a c i t a n c e -p FOUTPUT CAPACITANCE vs.GATE2 TO SOURCE VOLTAGEV G2S -Gate2 to Source Voltage-V I D = 10 mA (at V DS = 6 V V G2S = 4.5 V)f = 1 MHz 20100−10−201.002.03.04.05.0G p s -P o w e r G a i n -d BN F -N o i s e F i g u r e -d BPOWER GAIN AND NOISE FIGURE vs.GATE2 TO SOURCE VOLTAGE V G2S -Gate2 to Source Voltage-V105f = 900 MHz I D = 10 mA(at V DS = 6 V V G2S = 4.5 V)G psNF5Gps AND NF TEST CIRCUIT AT f = 900 MHzV G2S (3 V)OUTPUT 50 ΩL 1, L 2; 35 × 5 × 0.2 mm1000 pF1000 pF1000 pF1000 pFto 10 pF47 k Ω47 k ΩV G1SL 1L 2RFCV DD (6 V)INPUT 50 Ωto 10 pFto 10 pFto 10 pF[MEMO] 6[MEMO]7No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.Anti-radioactive design is not implemented in this product.M4 96. 5。

继电器规格书

FTR-K1 SERIESn FEATURESl1 pole, 32Al1 form A contactl Wide contact gap: 1.8mmDielectric strength (B/T open contacts) 2.5kVCompliant with European photovoltaic standard (VDE0126) Array and inverter safety standard (IEC62109-2)l High insulation in small package (between coil and contacts)- Dielectric strength: AC 4,000V- Surge strength: 6,000Vl Low coil power consumption: 1,400mWl Coil holding voltage can be reduced up to 35% of nominalcoil voltage (ambient temperature; +20 °C, contact current; 32A)Power consumption at the lowest coil holding voltage; 170mW* Coil holding voltage is the coil voltage after 100ms ofapplied nominal coil voltagel Plastic materials: Flammability; UL94 V-0l Cadmium-free contactsl Flux free, cat. RTII protectionl RoHS compliant.n PARTNUMBER INFORMATIONFTR-K3 A B 012 W - PS[Example] (a) (b) (c) (d) (e) (f)(a) Relay type FTR-K3 : FTR-K3-Series(b) Contact configuration A : 1 form A / PCB type(c) Coil power B : Standard (1,400mW)(d) Coil rated voltage 012 : 5.....48 VDCCoil rating table at page 3(e) Contact material W : Silver alloy(f) Option code PS : High current (32A) / contact gap 1.8mmn SPECIFICATION*1 Minimum switching loads mentioned above are reference values. Please perform the confirmation test with actualload before production since reference values may vary according to switching frequencies, environmental conditionsnCOIL RATINGType Compliance Contact ratingULUL 508Flammability: UL 94 V0 (plastics)32A, 277VAC (General use, at 85 °C)CSA 22.2 No.14 (approved by cULus)VDEIEC61810-132A, 250VAC (cos φ = 0.8, at 85 °C)n SAFETY STANDARDSNote: All values in the table are valid for 20°C and zero contact current.* Specified operate values are valid for pulse wave voltage.n DIMENSIONSl Dimensionsl PC board mounting hole layout(BOTTOM VIEW)lSchematics (BOTTOM VIEW)1. General InformationlAll signal and power relays produced by Fujitsu Components are compliant with RoHS directive 2002/95EC includingamendments.l Cadmium as used in electrical contacts is exempted from the RoHS directives on October 21st, 2005. (Amendment to Directive 2002/95/EC)l All of our signal and power relays are lead-free. Please refer to Lead-Free Status Info for older date codes at: /us/downloads/MICRO/fcai/relays/lead-free-letter.pdfl Lead free solder plating on relay terminals is Sn-3.0Ag-0.5Cu, unless otherwise specified. This material has been verified to be compatible with PbSn assembly process.2. Recommended Lead Free Solder ProfilelRecommended solder Sn-3.0Ag-0.5Cu.RoHS Compliance and Lead Free Information3. Moisture SensitivitylMoisture Sensitivity Level standard is not applicable to electromechanical relays, unless otherwise indicated.4. Tin WhiskerslDipped SnAgCu solder is known as presenting a low risk to tin whisker development. No considerable length whisker was found by our in house test.We highly recommend that you confirm your actual solder conditionsFlow Solder condition:Pre-heating: maximum 120˚CSoldering: dip within 5 sec. at260˚C solder bathSolder by Soldering Iron:Soldering Iron Temperature: maximum 360˚C Duration:maximum 3 sec.Fujitsu Components International Headquarter OfficesJapanFujitsu Component LimitedGotanda-Chuo Building3-5, Higashigotanda 2-chome, Shinagawa-ku Tokyo 141, JapanTel: (81-3) 5449-7010Fax: (81-3) 5449-2626Email: promothq@Web: North and South AmericaFujitsu Components America, Inc.250 E. Caribbean DriveSunnyvale, CA 94089 U.S.A.Tel: (1-408) 745-4900Fax: (1-408) 745-4970Email: components@Web: /components EuropeFujitsu Components Europe B.V.Diamantlaan 252132 WV HoofddorpNetherlandsTel: (31-23) 5560910Fax: (31-23) 5560950Email: info@Web: /components/Asia PacificFujitsu Components Asia Ltd.102E Pasir Panjang Road#01-01 Citilink Warehouse ComplexSingapore 118529Tel: (65) 6375-8560Fax: (65) 6273-3021Email: fcal@Web: /sg/services/micro/components/©2012 Fujitsu Components Europe B.V. All rights reserved. All trademarks or registered trademarks are the property of their respective owners. The contents, data and information in this datasheet are provided by Fujitsu Component Ltd. as a service only to its user and only for general information purposes.The use of the contents, data and information provided in this datasheet is at the users’ own risk.Fujitsu has assembled this datasheet with care and will endeavor to keep the contents, data and information correct, accurate, comprehensive, complete and up to date.Fujitsu Components Europe B.V. and affiliated companies do however not accept any responsibility or liability on their behalf, nor on behalf of its employees, for any loss or damage, direct, indirect or consequential, with respect to this datasheet, its contents, data, and information and related graphics and the correctness, reliability, accuracy, comprehensiveness, usefulness, availability and completeness thereof.Nor do Fujitsu Components Europe B.V. and affiliated companies accept on their behalf, nor on behalf of its employees, any responsibility or liability for any representation or warrant of any kind, express or implied, including warranties of any kind for merchantability or fitness for particular use, with respect to these datasheets, its contents, data, information and related graphics and the correctness, reliability, accuracy, comprehensiveness, usefulness, availability and completeness thereof. Rev. March 15, 2012。

AP2331SA-7;中文规格书,Datasheet资料

DescriptionThe AP2331 is single channel current-limited integrated high-side power switches optimized for hot-swap applications. The devices have fast short-circuit response time for improved overall system robustness and provide a complete protection solution for application subject to heavy capacitive loads and the prospect of short circuit. It offers reverse-current blocking, over-current, over-temperature and short-circuit protection, as well as controlled rise time and under-voltage lockout functionality.The device is available in SOT23 and SC59 packages.Features• Input voltage range: 2.7V – 5.2V • Fast short-circuit response time •0.4A accurate current limiting• 250m Ω on-resistance • Reverse-current blocking •Built-in soft-start with 0.7ms typical turn-on time • Over-current protection • Over-voltage protection • Short-circuit and thermal protection • ESD protection: 3KV HBM, 300V MM • Ambient temperature range: -40°C to +85°C •Available in “Green” molding compound (No Br, Sb) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)•UL recognized, file number E322375• IEC60950-1 CB scheme certifiedPin AssignmentsApplications• LCD TVs & Monitors• Set-Top-Boxes, Residential Gateways • Laptops, Desktops, Servers • Printers, Docking Stations, HUBs •Smart phones, e-ReadersNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)and <1000ppm antimony compoundsTypical Application Circuit(Top View)(Top View)SC59SOT23ININGNDGNDOUTOUTPin Name Pin Number DescriptionsGND 1GNDOUT 2 Switch output pinpinIN 3 VoltageinputAbsolute Maximum RatingsSymbol Parameter Ratings Units ESD HBM Human Body Model ESD Protection 3 KV ESD MM Machine Model ESD Protection 300 V V IN Input Voltage relative to GND 6.5 VV OUT Output Voltage relative to GND V IN +0.3 VI LOAD Maximum Continuous Load Current Internal Limited AT JMAX Maximum Junction Temperature 150 °CT ST Storage Temperature Range (Note 4) -65 to +150 °C Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified T ST from -65°C to +150°C)Recommended Operating ConditionsSymbol Parameter Min Max Units V IN Input voltage relative to GND 2.7 5.2 VI OUT Output Current 0 0.2 AT A Operating Ambient Temperature -40 +85 °CElectrical Characteristics (T A= 25°C, V IN= +5.0V, unless otherwise stated.)Symbol Parameter Test Conditions (Note 5) Min Typ. Max Unit V UVLO Input UVLO V IN rising 2.35 2.65 VI Q Input quiescent current Above UVLO, I OUT = 0 85 125 µAI REV Reverse leakage current V IN = 0V, V OUT = 5V, I REV at V IN 0.01 0.10 µA R DS(ON) Switch on-resistance V IN = 5V, I OUT = 0.2A 100 250 350 mΩI LIMIT Over-load current limit V IN = 5V, V OUT = 4V 0.3 0.4 0.5 AI OS Short-circuit current OUT shorted to ground 0.3 0.4 0.5 AI ROCP Reverse-current trigger point V IN = 5.0V, V OUT = 5.2V 0.20 0.25 AT TRIG Deglitch time from reverse current triggerto MOSFET turn off(Note 6) 0.5 0.7 1.0 msV OVP Output over-voltage trip point (Note 7) 5.3 5.6 VT OVP Debounce time from output over-voltageto MOSFET turn off15µsV REC Recovery after turn-off from ROCP andOVP101% V INT ON Output turn-on time (Note 8) C L = 0.1µF, R LOAD = 20Ω(UVLO to 90% V OUT-NOM)0.7 msT SHDN Thermal shutdown threshold V IN = 2.7V to 5.2V 150 °C T HYS Thermal shutdown hysteresis 20 °CθJA Thermal Resistance Junction-to-Ambient(Note 9)SOT23215o C/WSC59255o C/WNotes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.6. When reverse current triggers at I ROCP = 0.20A, the reverse current is continuously clamped at I ROCP for 0.7ms deglitch time until MOSFET isturned off.7. During output over-voltage protection, the output draws approximately 60µA current.8. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between V IN/0.2ms toV IN/1ms.9. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.Typical Performance CharacteristicsUVLO Increasing1ms/divUVLO Decreasing5ms/divOver-Load Current Limit5ms/divShort-Circuit Current Limit100µs/divDeglitch Time from Reverse-Current Trigger toMOSFET Turn-Off200µs/divReverse-Current Limit200µs/div550µs200mATypical Performance Characteristics (cont.)Output Over-Voltage Trip Point10ms/divOutput Turn-On Time200µs/div-40-20020406080AMBIENT TEMPERATURE (C)Fig. 1 Quiescent Supply Current vs.Ambient Temperature °0S U P P L Y C U R R E N T (µA )AMBIENT TEMPERATURE (C)Fig. 2 Short Circuit Current Limit vs.Ambient Temperature °0.390S H O R T C I R C U I T C U R R E N T (m A)INPUT VOLTAGE (V)Fig. 3 Output Turn On-Time vs. Input Voltage O U T P U T T U R N O N -T I M E (m s )AMBIENT TEMPERATURE (C)Fig. 4 Switch On-Resistance vs.Ambient Temperature°050100150O N -S T A T E R E S I S T A N C E (m )Ω OVP at 5.4VOVP recovery at 5.1VC L =0.1µF Rload=20ΩTypical Performance Characteristics (cont.)AMBIENT TEMPERATURE (C)Fig. 5 Current Limit Trip Threshold vs.Ambient Temperature °0.3880.402S U P P L Y C U R R E N T (µA )050100150200250300R E V E R S E C U R R E N T L I M I T (m A )350400450500-40-20020406080AMBIENT TEMPERATURE (C)Fig. 6 Reverse Current Limit vs.Ambient Temperature°Application informationUnder-Voltage Lockout (UVLO)Under-voltage lockout function (UVLO) guarantees that the internal power switch is initially off during start-up. The UVLO functions only when the power supply has reached at least 2.5V (TYP). Whenever the input voltage falls below approximately 2.5V, the power switch is turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Over-Current and Short-Circuit ProtectionAn internal sensing FET is employed to check for over current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an over current condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.The different overload conditions and the corresponding response of the AP2331 are outlined below:S.NO Conditions Explanation Behavior of the AP23311 Short-circuit condition at start-up Output is shorted before inputvoltage is applied or beforethe part is powered up.The IC senses the short circuit and immediately clampsoutput current to a certain safe level namely I LIMIT2 Short-circuit or Over currentconditionShort-Circuit or Overloadcondition that occurs whenthe part is powered up andabove UVLO.•At the instance the overload occurs, higher current mayflow for a very short period of time before the current limitfunction can react.•After the current limit function has tripped (reached theover-current trip threshold), the device switches intocurrent limiting mode and the current is clamped at I LIMIT.3 Gradual increase from nominaloperating current to I LIMITLoad increases gradually untilthe current-limit threshold.The current rises until I LIMIT. Once the threshold has beenreached, the device switches into its current limiting modeand is clamped at I LIMIT.Reverse-Current ProtectionThe USB specification does not allow an output device to source current back into the USB port. In a normal MOSFET switch, current will flow in reverse direction (from the output side to the input side) when the output side voltage is higher than the input side. A reverse current limit feature is implemented in the AP2331 to limit such back currents. Reverse current limit is always active in AP2331. Reverse current is limited at IROCP level and when the fault exists for more than 700µs, output device is disabled and shutdown. This is called the "Deglitch time from reverse current trigger to MOSFET turn off”. Recovery from IROCP occurs when the output voltage falls to 101% of input voltage.Over-Voltage ProtectionThe device has an output over-voltage protection that triggers when the output voltage reaches 5.3V(MIN). When this fault condition stays on for longer than 15µs, (This is called the “Debounce time from output over-voltage to MOSFET turn off”) output device is disabled and shutdown. Recovery from ROVPoccurs when the output voltage falls to 101% of input voltage.Thermal ProtectionThermal protection prevents the IC from damage when the die temperature exceeds safe margins. This mainly occurs when heavy-overload or short-circuit faults are present for extended periods of time. The AP2331 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately +150°C, the Thermal protection feature gets activated as follows: The internal thermal sense circuitry turns the power switch off thus preventing the power switch from damage. Hysteresis in the thermal sense circuit allows the device to cool down to approximately +20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load fault is removed, resulting in a pulsed output.Discharge FunctionWhen input voltage falls below UVLO, the discharge function is active. The output capacitor is discharged through an internal NMOS that has a discharge resistance of 800Ω. Hence, the output voltage drops down to zero. The time taken for discharge is dependent on the RC time constant of the resistance and the output capacitor. Discharge time is calculated when UVLO falling threshold is reached to output voltage reaching 300mV.Power Dissipation and Junction TemperatureThe low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (T A) and R DS(ON), the power dissipation can be calculated by:P D = R DS(ON) × I2Finally, calculate the junction temperature:T J = P D x RθJA + T AWhere:T A= Ambient temperature °CRθJA = Thermal resistanceP D = Total power dissipationOrdering Information (cont.)AP 2331 X - 77 : Tape & ReelPackage Packing SA : SOT23W : SC59Device Package CodePackaging (Note 10)7” Tape and ReelQuantityPart Number SuffixAP2331SA-7SA SOT23 3000/Tape & Reel-7 AP2331W-7WSC593000/Tape & Reel-7Note:10. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at/datasheets/ap02001.pdf.Marking Information(1)SOT23Device Package Identification CodeAP2331SA-7SOT23KJ(2) SC59W ( Top View )XX : Identification code W : Week : A~Z : 1~26 week;X : A~Z : Internal codeY : Year 0~9a~z : 27~52 week; z represents 52 and 53 weekDevice Package Identification CodeAP2331W-7SC59KNPackage Information (All Dimensions in mm)Package Type:(1) SOT23(2) SC59SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmSC59Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 G - - 1.90 H 2.90 3.10 3.00 J 0.0130.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75α0° 8° - All Dimensions in mmSuggested Pad Layout (1) SOT23(2) SC59Dimensions Value (in mm)Z 2.9X 0.8Y 0.9C 2.0E 1.35Dimensions Value (in mm)Z 3.4X 0.8Y 1.0C 2.4E 1.35X EYCZX EYCZ分销商库存信息: DIODESAP2331SA-7。

Jamicon_SK系列规格书

At +85oC no voltage application after 1000 hours the capacitor shall meet the following limits. (with voltage treatment) Shelf Life Capacitance Change Dissipation Factor Leakage current *±20% of initial value *200% of initial specified value *200% of initial specified value
*Whichever is greater after 3 minutes I : Leakage Current( µA) C : Rated Capacitance( µF) W.V. S.V. W.V. tan d 6.3 8 6.3 0.22 10 13 10 0.19 16 20 16 0.16 6.3 4 8 25 32 25 0.14 10 3 6 35 44 35 0.12 50 63 50 0.10 16 2 4 63 79 63
µF 0.47 1 2.2 3.3 4.7 10 22 33 47 100 220 330 470 1000 2200 3300 4700 6800 8200 10000 15000
Code
5x11 5x11 5x11 6.3x11 5x11 6.3x11 6.3x11 8x11.5 8x11.5 10x12.5 8x11.5 10x12.5 10x12.5 10x16 10x20 12.5x20 12.5x25 16x25 16x25 16x31.5 16x31.5 18x35.5 18x35.5 18x40 22x45 22x50 25x50

Ra-01S规格书说明书

文档“按现状”提供，不负任何担保责任，包括对适销性、适用于特定用途或非侵权性的任何担保，和任何提案、规格或样品在他处提到的任何担保。

本文档不负任何责任，包括使用本文档内信息产生的侵犯任何专利权行为的责任。

本文档在此未以禁止反言或其他方式授予任何知识产权使用许可，不管是明示许可还是暗示许可。

文中所得测试数据均为安信可实验室测试所得，实际结果可能略有差异。

文中提到的所有商标名称、商标和注册商标均属其各自所有者的财产，特此声明。

最终解释权归深圳市安信可科技有限公司所有。

注意由于产品版本升级或其他原因，本手册内容有可能变更。

深圳市安信可科技有限公司保留在没有任何通知或者提示的情况下对本手册的内容进行修改的权利。

本手册仅作为使用指导，深圳市安信可科技有限公司尽全力在本手册中提供准确的信息，但是深圳市安信可科技有限公司并不确保手册内容完全没有错误，本手册中的所有陈述、信息和建议也不构成任何明示或暗示的担保。

文件制定/修订/废止履历表版本日期制定/修订内容制定核准V1.02020.8.12首版徐V1.12020.8.19更新部分参数徐目录一、产品概述 (5)二、电气参数 (6)三、外观尺寸 (8)四、管脚定义 (10)五、原理图 (11)六、设计指导 (12)七、回流焊曲线图 (14)八、包装信息 (15)九、联系我们 (15)一、产品概述安信可LoRa系列模块（Ra-01S）由安信可科技设计开发。

该模组用于超长距离扩频通信，其射频芯片SX1268主要采用LoRa™远程调制解调器，用于超长距离扩频通信，抗干扰性强，能够最大限度降低电流消耗。

借助SEMTECH的LoRa™专利调制技术，SX1268具有超过-148dBm的高灵敏度，+22dBm的功率输出，传输距离远，可靠性高。

同时，相对传统调制技术，LoRa™调制技术在抗阻塞和选择方面也具有明显优势，解决了传统设计方案无法同时兼顾距离、抗干扰和功耗的问题。

西门康可控硅选型

SKM300GB174D
300A/1700V/2U
SKM200GAR123D
200A/1200V/2U
SKM50GAL123D
50A/1200V/2U
SKM300GAR123D
300A/1200V/2U
SKM75GAL123D
75A/1200V/2U
SKM400GAR124D
400A/1200V/2U
150A/1200V/2U
SKM400GAL124D(125D)
400A/1200V/2U
SKM200GB123D(124D)
200A/1200V/2U
SKM100GAL173D
100A/1700V/2U
SKM300GB123D(124D)
300A/1200V/2U
SKM145GAL174DN
145A/1700V/2U
SKKT131/12(16)E
130A/1200V(1600V)/2U
SKKQ31/12(16)
31A/1200V(1600V)双相反并联2U
SKKT132/12(16)E
130A/1200V(1600V)/2U
SKKQ45/12(16)
45A/1200V(1600V)双相反并联2U
型号(半控)
技术指标
西门康可控硅系列
西门康可控硅模块(SKKT=两可控硅串联,SKKH=二极管+高端可控硅,SKKL=低端可控硅+二极管)
型号(全控)
技术指标
型号(全控)
技术指标
SKKT15/12(16)E(D)
15A/1200V(1600V)/2U
SKKT161/12(16)E
160A/1200V(1600V)/2U

09-52-3031;中文规格书,Datasheet资料

NONE TRAY PACKAGING: PK-2145-001 A-2145-AGNAP909 Material No
NONE TRAY PACKAGING: PK-2145-001 A-2145-AANKP909 Material No 09-52-3035 09-52-3045 09-52-3055 09-52-3065 09-52-3085
Material No
REV:
TITLE:
AA
DOCUMENT NUMBER:
2/2/2012 s MMSTROH
KK 156 PCB ASSY 2145 RIGHT ANGLE SERIES
CHECKED BY:
SHEET No.
-5APPROVED BY:
CREATED / REVISED BY:
NONE TRAY PACKAGING: PK-2145-001 A-2145-AANA208 Material No 09-62-3021 09-62-3031 09-62-3041 09-62-3051 09-62-3061 09-62-3071 09-62-3081 09-62-3091 09-62-3101 09-62-3111 09-62-3121 09-62-3131 09-62-3141 09-62-3151
-4APPROVED BY:
CREATED / REVISED BY:
SDA-2145-001
/
MMSTROH
MKIPPER
FSMITH
TEMPLATE FILENAME: PRODUCT_SPEC[SIZE_A](V.1).DOC
KK 156 PCB ASSY
2145 RIGHT ANGLE SERIES

MLX92221LSE-AAA-002-RE;MLX92221LUA-AAA-001-BU;中文规格书,Datasheet资料

Features and Benefits❑Wide operating voltage range: from 2.7V to 24V❑Very wide range for magnetic sensitivity❑Chopper-stabilized amplifier stage❑Programmable Built-in negative temperature coefficient ❑Reverse Supply Voltage Protection❑Under-Voltage Lockout Protection❑Thermal Protection❑High ESD rating / Excellent EMC performance❑Thin SOT23 3L Green Compliant package Application Examples❑Automotive, Consumer and Industrial ❑Wiper motor❑Window lifter❑Doorlock❑Seatbelt buckle❑Seat positioning❑Sunroof/Tailgate opener❑Electrical power steering1 Functional Diagram2 General DescriptionThe Melexis MLX92221 is the new generation Hall-effect switch designed in mixed signal submicron CMOS technology.The device integrates a voltage regulator, Hall sensor with advanced offset cancellation system and a current sink-configured output driver, all in a single package. Based on a brand new platform, the magnetic core is using an improved offset cancellation system allowing faster and more accurate processing while being temperature insensitive and stress independent. In addition a temperature coefficient is implemented to compensate the natural behaviour of certain types of magnets becoming weaker with rise in temperature. The included voltage regulator operates from 2.7 to 24V, hence covering a wide range of applications. With the built-in reverse voltage protection, a serial resistor or diode on the supply line is not required so that even remote sensors can be specified for low voltage operation down to 2.7V while being reverse voltage tolerant.In an event of a drop below the minimum supply voltage during operation, the under-voltage lock-out protection will automatically freeze the device, preventing the electrical perturbation to affect the magnetic measurement circuitry. The output current state is therefore only updated based on a proper and accurate magnetic measurement result.The two-wire interface not only saves one wire, but also allows implementation of diagnostic functions as reverse polarity connection and malfunction detection. The on-chip thermal protection also switches off the output if the junction temperature increases above an abnormally high threshold. It will automatically recover once the temperature decreases below a safe value. With switching magnetic characteristics the supply current state is turned high by a sufficiently strong field facing the package branded side. Toggling the state of the supply current from high to low is possible by applying low or no magnetic field.The MLX92221 is delivered in a Green and RoHS compliant Plastic Single-in-Line (TO-92 flat) for through-hole mount or PCB-less design or in 3-pin Thin Small Outline Transistor (TSOT) for surfacemount processTable of Contents1 Functional Diagram (1)2 General Description (1)3 Absolute Maximum Ratings (3)4 General Electrical Specifications (4)5 Magnetic Specifications (5)6 Magnetic Behaviour (5)6.1 Latch sensor (5)7 Performance Graphs (6)7.1 B OP and B RP vs. T J (6)7.2 B OP and B RP vs. V DD (6)7.3 I OFF vs. Tj (6)7.4 I OFF vs. V DD (6)7.5 I ON vs.T J (6)7.6 I ON vs VDD (6)7.7 VDD derating SE package (7)8 Application Information (8)8.1 Typical Automotive Application Circuit (8)8.2 Automotive and Harsh, Noisy Environments Application Circuit (8)8.3 Strobbing VDD application (used for reduced self-heating) (8)9 Standard information regarding manufacturability of Melexis products with different soldering processes (9)10 ESD Precautions (9)11 SE (TSOT-3L) Package Information (10)12 Disclaimer (11)3 Absolute Maximum RatingsCExceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.1 The maximum junction temperature should not be exceeded2 For maximum 1 hour3 Including current through protection device4 For maximum 500ms5 Through protection device6 For 1000 hours.7 Human Model according AEC-Q100-002 standard8 Machine Model according AEC-Q100-003 standard9 Charged Device Model according AEC-Q100-011 standard4 General Electrical SpecificationsDC Operating Parameters V DD = 3.5 to 24V, T J = -40°C to 165°C (unless otherwise specified)1 Typical values are defined at TA = +25ºC and VDD = 12V2 The Power-On Time represents the time from reaching VDD = 2.7V to the first refresh of the supply current state.3 Power-On Slew Rate should not be critical for the proper device start-up.4 Delay Time is the time from magnetic threshold reached to the start of the supply current switching5 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses5 Magnetic SpecificationsTable 1: Magnetic Switching Points & Temperature Coefficient combinationTemperature coefficient is calculated using the following formula:C T C T C ppm T T B B B o o o C OP OPT OPT o 150;25;/,10*2161225126 Magnetic Behaviour6.1 Latch sensor7 Performance Graphs7.1 B OP and B RP vs. T J7.2 B OP and B RP vs. V DD7.3 I OFF vs. Tj7.4 I OFF vs. V DD7.5 I ON vs.T J7.6 I ON vs VDD7.7 VDD derating SE package8 Application Information8.1 Typical Automotive Application CircuitV Notes:1. For proper operation, a 10nF bypass capacitor should be placed as close as possible to the V DD and ground(GND) pin. For complete emissions protection a C1 = 68nF is recommended.2. The TEST pin is to be left open or connected to GND.8.2 Automotive and Harsh, NoisyEnvironments Application Circuit 8.3 Strobbing VDD application (used forreduced self-heating)V CNotes:1.G iven strobe timing is exemplary only.T he output response is for sensor typeMLX92221x xx-x LxS.2.F or proper operation,a10n F to 100n F bypass capacitor should be placed as close as possible to the V D D and ground pin.VI DIIOV CNotes:1.F or proper operation,a10n F to 100n F bypass capacitor should be placed as close as possible to the V D D and ground pin.2.T he device could tolerate negative v oltage d own to -24V,s o i f negative transients over supply line V P EAK< -29V are expected,u sage of the diode D1i s recommended. Otherwise only R S ENSE is sufficient.When s electing the resistor R S ENSE,t hree points are important:-the resistor has to limit I D D/I D DREV to 50m A maximum-the resistor has to withstand the power dissipated in both over voltage conditions (V R SENSE2/R S ENSE)-the resulting device supply voltage V D D has to be higher than V D D min (V D D=V C C–R S ENSE.I D D)3.T he d evice could tolerate positive supply v oltage up to +27V(u ntil the maximum power dissipation is not exceeded),s o i f positive transients over supply line withV P EAK>32V are expected,u sage a zener diode DZ1i s recommended.T he R S ENSE-D Z1 network should be sized to limit the voltage over the device below the maximum allowed.9 Standard information regarding manufacturability of Melexis products with different soldering processesOur products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods:Reflow Soldering SMD’s (Surface Mount Devices)IPC/JEDEC J-STD-020Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices(classification reflow profiles according to table 5-2)EIA/JEDEC JESD22-A113Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing(reflow profiles according to table 2)Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)EN60749-20Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heatEIA/JEDEC JESD22-B106 and EN60749-15Resistance to soldering temperature for through-hole mounted devicesIron Soldering THD’s (Through Hole Devices)EN60749-15Resistance to soldering temperature for through-hole mounted devicesSolderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)EIA/JEDEC JESD22-B102 and EN60749-21SolderabilityFor all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis.The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board./Assets/Soldering-Application-Note-and-Recommendations-5446.aspxMelexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: /quality.aspx10 ESD PrecautionsElectronic semiconductor products are sensitive to Electro Static Discharge (ESD).Always observe Electro Static Discharge control procedures whenever handling semiconductor products.11 SE (TSOT-3L) Package Information2.75 BSCSECTION B-B’Notes:1. All dimensions are in millimeters2. Outermost plastic extreme width does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.15mm per side.3. Outermost plastic extreme length does not include mold flash or protrusions. Mold flash and protrusions shall not exceed 0.25mm per side.4. The lead width dimension does not include dambar protrusion.Allowable dambar protrusion shall be 0.07mm total in excess of the lead width dimension at maximum material condition.5. Dimension is the length of terminal for soldering to a substrate.6. Dimension on SECTION B-B’ applies to the flat section of the lead between 0.08mm and 0.15mm from the lead tip.7. Formed lead shall be planar with respect to one another with 0.076mm at seating plane.Marking:TBDsee note 6TOP VIEWEND VIEWSIDE VIEWNotes:1. All dimensions are in millimetersTOP VIEW END VIEWNote: Test pin to be left open or connected to GND in the application分销商库存信息: MELEXISMLX92221LSE-AAA-002-RE MLX92221LUA-AAA-001-BU。

AHT21 产品手册说明书

AHT21产品手册•完全标定•数字输出，I2C接口•优异的长期稳定性•采用SMD封装适于回流焊•响应迅速、抗干扰能力强产品综述AHT21，新一代温湿度传感器在尺寸与智能方面建立了新的标准：它嵌入了适于回流焊的双列扁平无引脚SMD封装，底面3x3mm，高度0.8mm。

传感器输出经过标定的数字信号，标准I2C格式。

AHT21配有一个全新设计的ASIC专用芯片、一个经过改进的MEMS半导体电容式湿度传感元件和一个标准的片上温度传感元件，其性能已经大大提升甚至超出了前一代传感器的可靠性水平，新一代温湿度传感器，经过改进使其在恶劣环境下的性能更稳定。

每一个传感器都经过校准和测试，在产品表面印有产品批号。

由于对传感器做了改良和微型化改进，因此它的性价比更高，并且最终所有设备都将得益于尖端的节能运行模式。

应用范围广泛应用于消费电子、医疗、汽车、工业、气象等领域，例如：暖通空调、除湿器和冰箱等家电产品，测试和检测设备及其他相关温湿度检测控制产品。

图1:AHT21传感器封装图(单位：mm公差：±0.1mm)传感器性能相对湿度参数条件最小典型最大单位分辨率典型-0.024-%RH 精度误差1典型-±2-%RH 最大见图2-%RH 重复性--±0.1-%RH 迟滞--±1-%RH 非线性--<0.1-%RH 响应时间2τ63%-<8-s 工作范围extended 30-100%RH 长时间漂移4正常-<1-%RH/yr表1湿度特性表图225℃时相对湿度的典型误差和最大误差电气特性参数条件最小典型最大单位供电电压典型 2.2 3.3 5.5V 供电电流,IDD 5休眠--250nA 测量-980-µA 功耗5休眠--0.8µW 测量- 3.2-mW通讯两线数字接口，标准I 2C协议表2电气特性1此精度为出厂检验时，传感器在25℃供电电压为3.3V条件下的测试精度。

继电器规格书

2n4403-datasheet.pdf-数据表说明书

2010-5ELECTRICAL CHARACTERISTICS ( @ T A = 25C unless otherwise noted)MAXIMUM TATINGES ( @ T A = 25C unless otherwise noted)Notes :CHARACTERISTICSSYMBOL UNITS417oC/WThermal Resistance Junction to AmbientRATINGSMax. Steady State Power Dissipation (1) @TA=25oC Derate above 25CMax. Operating Temperature Range Storage Temperature RangeSYMBOL P D T J T STGR q JAVALUE MAX.-TYP.-MIN.UNITS mW6001. Alumina=0.4*0.3*0.024in.99.5% alumina2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".150-55 to +150o C oCTRANSISTOR(PNP)ELECTRICAL CHARACTERISTICS(@TA=25O C unless otherwise noted)OFF CHARACTERISTICSON CHARACTERISTICS (1)ChatacteristicCollector-Emitter Breakdown Voltage(1) (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -0.1mAdc, I E = 0)Emitter-Base Breakdown Voltage (I E = -0.1mAdc, I C = 0)Base Cutoff Current (V CE = -35Vdc, V BE(off)= -0.4Vdc)Collector Cutoff Current (V CE = -35Vdc, V EB = -0.4Vdc)DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc)(I C = -10mAdc, V CE = -1.0Vdc)(I C = -1.0mAdc, V CE = -1.0Vdc)V (BR)CEO -40-Vdc V (BR)CBO -40-Vdc V (BR)EBO-5.0-Vdc I CEXI BEV --0.1--0.1hFE30--60-100-100300uAdcuAdc Symbol Min Max Unit(I C = -150mAdc, V CE = -2.0Vdc)Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc)(I C = -500mAdc, I B = -50mAdc)(I C = -500mAdc, V CE = -2.0Vdc)Vdc V CE(sat)20---0.4--0.75VdcV BE(sat)-0.75-0.95--1.3Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc)(I C = -500mAdc, I B =-50mAdc)SMALL-SIGNAL CHARACTERISTICSSWITCHING CHARACTERISTICSf T 200-MHz Current-Gain-Bandwidth Product (I C = -20mAdc, V CE = -10Vdc, f= 100MHz)C cb C eb -8.5pF pF t d t r t s t f----nsnsh ie -301.515kohms h re 0.18.060500X 10-4h fe 1.0100-h oe225301520umhosOutput Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz)Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz)Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)(V CC = -30Vdc, V EB = -2.0Vdc, I C = -150mAdc, I B1= -15mAdc)(V CC = -30Vdc, I C = -150mAdc, I B1= I B2= -15mAdc)Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)Delay Time Rise Time Storage Time Fall TimeNote :Pulse Test: Pulse Width <300ms,Duty Cycle <2.0%--RATING AND CHARACTERISTICS CURVES ( )Figure 1. CapacitancesFigure 3. Turn-On TimeFigure 5. Storage Time0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 3010 20 30 50 70 100 200 300 500C A P A C I T A N C E (p F )t s ',S T O R A G E T I M E (n s )t , T I M E (n s )t , T I M E (n s )Q , C H A R G E (n C )REVERSE VOLTAGE (V)I C ,COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)I C ,COLLECTOR CURRENT (mA)Figure 4. Rise Times10203050701007.05.010 20 30 50 70 100 200 300 50010 20 30 50 70 100 200 300 500I C ,COLLECTOR CURRENT (mA)10 20 30 50 70 100 200 300 500Figure 2. Charge Data0.20.30.50.71.0100.12.03.05.07.025OC100O C2N4403RATING AND CHARACTERISTICS CURVES ()h o e , O U T P U T A D M I T T A N C E (u m h o s )h r e , V O L T A G E F E E D B A C K R A T I O (X 10-4)0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 100.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1050 100 200 500 1.0k 2.0k 5.0k 10k 20k 50kN F , N O I S E F I G U R E (d B )N F ,N O I S E F I G U R E (d B )Figure 6.Frequency EffectsI C , COLLECTOR CURRENT (mAdc)I C , COLLECTOR CURRENT (mAdc)Figure 8.Cuttent GainFigure 9.Input ImpedanceR S , SOURCE RESISTANCE (OHMS)Figure 7.Source Resistance EffectsI C , COLLECTOR CURRENT (mAdc)I C , COLLECTOR CURRENT (mAdc)Figure 11.Temperature CoefficientsFigure 10.Voltage Feedback Ratio 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 100.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10f, FREQUENCY (KHz)46810200.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100V CE = -10Vdc, T A = 25CBandwidth = 1.0Hz2N4403RATING AND CHARACTERISTICS CURVES ()Figure 12. DC Current GainFigure 13. Collector Saturation RegionFigure 14. "ON" Voltages Figure 15. Temperature Coefficients0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 5000.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 500.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 5000.1 0..2 0.5 1.0 2.0 5.0 10 20 50 100 200 500h F E , N O R M A L I Z E D C U R R E N T G A I NV C E , C O L L E C T O R - E M I T T E R V O L T A G E (V )V O L T A G E (V )C O E F F I C I E N T (m V /OC )I C , COLLECTOR CURRENT (mA)I B , BASE CURRENT (mA)I C , COLLECTOR CURRENT (mA)I C , COLLECTOR CURRENT (mA)0.40.60.81.00.20.30.50.71.03.00.22.030442NRectron Inc reserves the right to make changes without notice to any productspecification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi- lity for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" paramet- ers which may be included on RECTRON data sheets and/ or specifications ca- n and do vary in different applications and actual performance may vary over ti- me. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit.Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other rela- ted applications where a failure or malfunction of component or circuitry may di- rectly or indirectly cause injury or threaten a life without expressed written appr- oval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rect- ron Inc and its subsidiaries harmless against all claims, damages and expendit- ures.DISCLAIMER NOTICE。

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继电器 规格书

2n4403-datasheet.pdf-数据表说明书

继电器规格书

继电器规格书