FUNDAMENTAL OF WAFER PROCESS
封装流程的介绍
Multi-frame LOC structure
Tape LOC structure
Power Signal Signal IC chip Signal Signal Power Power IC chip
Bus bar Signal Signal Signal Signal Bus bar tape IC chip
SRAM,ROM,EPROM EEPROM,Flash, Microcontroller Microprocessor Linear,Logic,DRAM SRAM
备注: 大部分 64 脚以下零
件是以 DIP/SOP 方式封 装,而大於 44 脚多是以 LCC/QFP 封装 TSOP,TSSOP,SSOP, Q(Quarter)SOP, M(Miniature)SOP
WIRE BOND
1.0 MIL SHINETSU KMC-260 NCA
MOLDING
MARKING
DEJUNK Plating
GPM / E & R LASER
HAN-MI 101 MECO EPL-2400S
Sn / Pb 85/15
FORMING & SINGULATION
HAN-MI 203F YAMADA CU-951-1 RVSI LS3900DB / 5700
SUNRISE JEDEC 150 Deg C
LEAD SCAN/FVI/PACK
IC 封装的基本制程
与 管制重点
Conventional IC Packaging Process Flow
IC封装基本制造程序 : 以 TSOP - II Tape LOC 为例
1. 2. 3. 4. 5. Wafer Process Die Attaching Wire Bonding Molding Marking and Lead Process
《材料科学基础》作业答案
• 3、Fick扩散第二方程的高斯解适合求解总量为M 的扩散元素沉积为一薄层扩散问题 ；Fick扩散 第二方程的误差函数解适合求解 无限长棒（扩 散偶）或半无限长棒的扩散问题。
• 4、扩散的微观机理有 空位扩散 、 间隙扩散、 位 错扩散 、 表面扩散、晶界扩散 等。
• 5、空位扩散的阻力比间隙扩散 大 ，激活能 高。
第三章 晶体结构缺陷 P116
• 一、填空题 • 1、按几何组态，晶体中的缺陷分为 点缺陷 、 线
缺陷 、面缺陷 和体缺陷。 • 2、点缺陷主要包括 空位、 间隙原子、置换原子 ；
线缺陷有 位错 ；面缺陷包括 晶界、相界、表面 等。 • 3、描述位错性质及特征的是 柏氏矢量b 。 • 4、位错的类型有 刃位错 、 螺位错 和 混合位 错。
• 11、MgO晶体具有 NaCl型结构，其对称型是
3L4 4L36L29PC ，晶族是 高级晶族 ，晶系是 立 方晶系 ，晶体的键型是 离子键 。
• 12、硅酸盐晶体结构中的基本结构单元是 硅 氧四面体[SiO4]。
• 13、几种硅酸盐晶体的络阴离子分别为[Si2O7]6-、 [Si2O6]4-、[Si4O10]4-、[AlSi3O8]1-，它们的晶体 结构类型分别为 组群状 ， 链状 ， 层状 ，和 架状 。
• MgO的分子量为（24.305 +15.999 ）40.30， •阿佛加得罗常数是6.0238×1023， •每个MgO 分子的质量A为： 40.30/(6.0238×1023)。
MgO结构：z=4 • MgO的密度ρ
Z M a /3 N A 4 4 (0 0 ..3 4 0 2 4 /( 6 .1 0 0 2 7 )1 3 0 2 3 ) 3 .5 1 (g /c m 3 )
半导体制造技术
Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons（不带电的中子）, positively charged protons（带正电的质子）in the nucleus and negatively charged electrons（带负电的核外电子） that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally（无心的） turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier（隔离阻障）is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。
力学,流体力学,固体力学词汇英语翻译
力学，流体力学，固体力学英语词汇翻译牛顿力学Newtonian mechanics经典力学classical mechanics静力学statics运动学kinematics动力学dynamics动理学kinetics宏观力学macroscopic mechanics,macromechanics细观力学mesomechanics微观力学microscopic mechanics,micromechanics一般力学general mechanics固体力学solid mechanics流体力学fluid mechanics理论力学theoretical mechanics应用力学applied mechanics工程力学engineering mechanics实验力学experimental mechanics计算力学computational mechanics理性力学rational mechanics物理力学physical mechanics地球动力学geodynamics力force作用点point of action作用线line of action力系system of forces力系的简化reduction of force system等效力系equivalent force system刚体rigid body力的可传性transmissibility of force平行四边形定则parallelogram rule力三角形force triangle力多边形force polygon零力系null-force system平衡equilibrium力的平衡equilibrium of forces平衡条件equilibrium condition平衡位置equilibrium position平衡态equilibrium state分析力学analytical mechanics拉格朗日乘子Lagrange multiplier拉格朗日[量] Lagrangian拉格朗日括号Lagrange bracket循环坐标cyclic coordinate循环积分cyclic integral哈密顿[量] Hamiltonian哈密顿函数Hamiltonian function正则方程canonical equation正则摄动canonical perturbation正则变换canonical transformation正则变量canonical variable哈密顿原理Hamilton principle作用量积分action integral哈密顿--雅可比方程Hamilton-Jacobi equation 作用--角度变量action-angle variables阿佩尔方程Appell equation劳斯方程Routh equation拉格朗日函数Lagrangian function诺特定理Noether theorem泊松括号poisson bracket边界积分法boundary integral method并矢dyad运动稳定性stability of motion轨道稳定性orbital stability李雅普诺夫函数Lyapunov function渐近稳定性asymptotic stability结构稳定性structural stability久期不稳定性secular instability弗洛凯定理Floquet theorem倾覆力矩capsizing moment自由振动free vibration固有振动natural vibration暂态transient state环境振动ambient vibration反共振anti-resonance衰减attenuation库仑阻尼Coulomb damping同相分量in-phase component非同相分量out-of-phase component超调量overshoot参量[激励]振动parametric vibration模糊振动fuzzy vibration临界转速critical speed of rotation阻尼器damper半峰宽度half-peak width集总参量系统lumped parameter system相平面法phase plane method相轨迹phase trajectory等倾线法isocline method跳跃现象jump phenomenon负阻尼negative damping达芬方程Duffing equation希尔方程Hill equationKBM方法KBM method, Krylov-Bogoliu-bov-Mitropol'skii method 马蒂厄方程Mathieu equation平均法averaging method组合音调combination tone解谐detuning耗散函数dissipative function硬激励hard excitation硬弹簧hard spring, hardening spring谐波平衡法harmonic balance method久期项secular term自激振动self-excited vibration分界线separatrix亚谐波subharmonic软弹簧soft spring ,softening spring软激励soft excitation邓克利公式Dunkerley formula瑞利定理Rayleigh theorem分布参量系统distributed parameter system优势频率dominant frequency模态分析modal analysis固有模态natural mode of vibration同步synchronization超谐波ultraharmonic范德波尔方程van der pol equation频谱frequency spectrum基频fundamental frequencyWKB方法WKB method, Wentzel-Kramers-Brillouin method缓冲器buffer风激振动aeolian vibration嗡鸣buzz倒谱cepstrum颤动chatter蛇行hunting阻抗匹配impedance matching机械导纳mechanical admittance机械效率mechanical efficiency机械阻抗mechanical impedance随机振动stochastic vibration, random vibration隔振vibration isolation减振vibration reduction应力过冲stress overshoot喘振surge摆振shimmy起伏运动phugoid motion起伏振荡phugoid oscillation驰振galloping陀螺动力学gyrodynamics陀螺摆gyropendulum陀螺平台gyroplatform陀螺力矩gyroscoopic torque陀螺稳定器gyrostabilizer陀螺体gyrostat惯性导航inertial guidance姿态角attitude angle方位角azimuthal angle舒勒周期Schuler period机器人动力学robot dynamics多体系统multibody system多刚体系统multi-rigid-body system机动性maneuverability凯恩方法Kane method转子[系统]动力学rotor dynamics转子[一支承一基础]系统rotor-support-foundation system 静平衡static balancing动平衡dynamic balancing静不平衡static unbalance动不平衡dynamic unbalance现场平衡field balancing不平衡unbalance不平衡量unbalance互耦力cross force挠性转子flexible rotor分频进动fractional frequency precession半频进动half frequency precession油膜振荡oil whip转子临界转速rotor critical speed自动定心self-alignment亚临界转速subcritical speed涡动whirl连续过程continuous process碰撞截面collision cross section通用气体常数conventional gas constant燃烧不稳定性combustion instability稀释度dilution完全离解complete dissociation火焰传播flame propagation组份constituent碰撞反应速率collision reaction rate燃烧理论combustion theory浓度梯度concentration gradient阴极腐蚀cathodic corrosion火焰速度flame speed火焰驻定flame stabilization火焰结构flame structure着火ignition湍流火焰turbulent flame层流火焰laminar flame燃烧带burning zone渗流flow in porous media, seepage达西定律Darcy law赫尔-肖流Hele-Shaw flow毛[细]管流capillary flow过滤filtration爪进fingering不互溶驱替immiscible displacement不互溶流体immiscible fluid互溶驱替miscible displacement互溶流体miscible fluid迁移率mobility流度比mobility ratio渗透率permeability孔隙度porosity多孔介质porous medium比面specific surface迂曲度tortuosity空隙void空隙分数void fraction注水water flooding可湿性wettability地球物理流体动力学geophysical fluid dynamics 物理海洋学physical oceanography大气环流atmospheric circulation海洋环流ocean circulation海洋流ocean current旋转流rotating flow平流advection埃克曼流Ekman flow埃克曼边界层Ekman boundary layer大气边界层atmospheric boundary layer大气-海洋相互作用atmosphere-ocean interaction埃克曼数Ekman number罗斯贝数Rossby unmber罗斯贝波Rossby wave斜压性baroclinicity正压性barotropy内磨擦internal friction海洋波ocean wave盐度salinity环境流体力学environmental fluid mechanics斯托克斯流Stokes flow羽流plume理查森数Richardson number污染源pollutant source污染物扩散pollutant diffusion噪声noise噪声级noise level噪声污染noise pollution排放物effulent工业流体力学industrical fluid mechanics流控技术fluidics轴向流axial flow并向流co-current flow对向流counter current flow横向流cross flow螺旋流spiral flow旋拧流swirling flow滞后流after flow混合层mixing layer抖振buffeting风压wind pressure附壁效应wall attachment effect, Coanda effect简约频率reduced frequency爆炸力学mechanics of explosion终点弹道学terminal ballistics动态超高压技术dynamic ultrahigh pressure technique 流体弹塑性体hydro-elastoplastic medium热塑不稳定性thermoplastic instability空中爆炸explosion in air地下爆炸underground explosion水下爆炸underwater explosion电爆炸discharge-induced explosion激光爆炸laser-induced explosion核爆炸nuclear explosion点爆炸point-source explosion殉爆sympathatic detonation强爆炸intense explosion粒子束爆炸explosion by beam radiation 聚爆implosion起爆initiation of explosion爆破blasting霍普金森杆Hopkinson bar电炮electric gun电磁炮electromagnetic gun爆炸洞explosion chamber轻气炮light gas gun马赫反射Mach reflection基浪base surge成坑cratering能量沉积energy deposition爆心explosion center爆炸当量explosion equivalent火球fire ball爆高height of burst蘑菇云mushroom侵彻penetration规则反射regular reflection崩落spallation应变率史strain rate history流变学rheology聚合物减阻drag reduction by polymers挤出[物]胀大extrusion swell, die swell无管虹吸tubeless siphon剪胀效应dilatancy effect孔压[误差]效应hole-pressure[error]effect 剪切致稠shear thickening剪切致稀shear thinning触变性thixotropy反触变性anti-thixotropy超塑性superplasticity粘弹塑性材料viscoelasto-plastic material 滞弹性材料anelastic material本构关系constitutive relation麦克斯韦模型Maxwell model沃伊特-开尔文模型Voigt-Kelvin model宾厄姆模型Bingham model奥伊洛特模型Oldroyd model幂律模型power law model应力松驰stress relaxation应变史strain history应力史stress history记忆函数memory function衰退记忆fading memory应力增长stress growing粘度函数voscosity function相对粘度relative viscosity复态粘度complex viscosity拉伸粘度elongational viscosity拉伸流动elongational flow第一法向应力差first normal-stress difference第二法向应力差second normal-stress difference 德博拉数Deborah number魏森贝格数Weissenberg number动态模量dynamic modulus振荡剪切流oscillatory shear flow宇宙气体动力学cosmic gas dynamics等离[子]体动力学plasma dynamics电离气体ionized gas行星边界层planetary boundary layer阿尔文波Alfven wave泊肃叶-哈特曼流] Poiseuille-Hartman flow哈特曼数Hartman number生物流变学biorheology生物流体biofluid生物屈服点bioyield point生物屈服应力bioyield stress电气体力学electro-gas dynamics铁流体力学ferro-hydrodynamics血液流变学hemorheology, blood rheology血液动力学hemodynamics磁流体力学magneto fluid mechanics磁流体动力学magnetohydrodynamics, MHD磁流体动力波magnetohydrodynamic wave磁流体流magnetohydrodynamic flow磁流体动力稳定性magnetohydrodynamic stability 生物力学biomechanics生物流体力学biological fluid mechanics生物固体力学biological solid mechanics宾厄姆塑性流Bingham plastic flow开尔文体Kelvin body沃伊特体Voigt body可贴变形applicable deformation可贴曲面applicable surface边界润滑boundary lubrication液膜润滑fluid film lubrication向心收缩功concentric work离心收缩功eccentric work关节反作用力joint reaction force微循环力学microcyclic mechanics微纤维microfibril渗透性permeability生理横截面积physiological cross-sectional area 农业生物力学agrobiomechanics纤维度fibrousness硬皮度rustiness胶粘度gumminess粘稠度stickiness嫩度tenderness渗透流osmotic flow易位流translocation flow蒸腾流transpirational flow过滤阻力filtration resistance压扁wafering风雪流snow-driving wind停滞堆积accretion遇阻堆积encroachment沙漠地面desert floor流沙固定fixation of shifting sand流动阈值fluid threshold连续介质力学mechanics of continuous media 介质medium流体质点fluid particle无粘性流体nonviscous fluid, inviscid fluid连续介质假设continuous medium hypothesis流体运动学fluid kinematics水静力学hydrostatics液体静力学hydrostatics支配方程governing equation伯努利方程Bernoulli equation伯努利定理Bernonlli theorem毕奥-萨伐尔定律Biot-Savart law欧拉方程Euler equation亥姆霍兹定理Helmholtz theorem开尔文定理Kelvin theorem涡片vortex sheet库塔-茹可夫斯基条件Kutta-Zhoukowski condition 布拉休斯解Blasius solution达朗贝尔佯廖d'Alembert paradox雷诺数Reynolds number施特鲁哈尔数Strouhal number随体导数material derivative不可压缩流体incompressible fluid质量守恒conservation of mass动量守恒conservation of momentum能量守恒conservation of energy动量方程momentum equation能量方程energy equation控制体积control volume液体静压hydrostatic pressure涡量拟能enstrophy压差differential pressure流[动] flow流线stream line流面stream surface流管stream tube迹线path, path line流场flow field流态flow regime流动参量flow parameter流量flow rate, flow discharge涡旋vortex涡量vorticity涡丝vortex filament涡线vortex line涡面vortex surface涡层vortex layer涡环vortex ring涡对vortex pair涡管vortex tube涡街vortex street卡门涡街Karman vortex street马蹄涡horseshoe vortex对流涡胞convective cell卷筒涡胞roll cell涡eddy涡粘性eddy viscosity环流circulation环量circulation速度环量velocity circulation偶极子doublet, dipole驻点stagnation point总压[力] total pressure总压头total head静压头static head总焓total enthalpy能量输运energy transport速度剖面velocity profile库埃特流Couette flow单相流single phase flow单组份流single-component flow均匀流uniform flow非均匀流nonuniform flow二维流two-dimensional flow三维流three-dimensional flow准定常流quasi-steady flow非定常流unsteady flow, non-steady flow 暂态流transient flow周期流periodic flow振荡流oscillatory flow分层流stratified flow无旋流irrotational flow有旋流rotational flow轴对称流axisymmetric flow不可压缩性incompressibility不可压缩流[动] incompressible flow浮体floating body定倾中心metacenter阻力drag, resistance减阻drag reduction表面力surface force表面张力surface tension毛细[管]作用capillarity来流incoming flow自由流free stream自由流线free stream line外流external flow进口entrance, inlet出口exit, outlet扰动disturbance, perturbation分布distribution传播propagation色散dispersion弥散dispersion附加质量added mass ,associated mass 收缩contraction镜象法image method无量纲参数dimensionless parameter几何相似geometric similarity运动相似kinematic similarity动力相似[性] dynamic similarity平面流plane flow势potential势流potential flow速度势velocity potential复势complex potential复速度complex velocity流函数stream function源source汇sink速度[水]头velocity head拐角流corner flow空泡流cavity flow超空泡supercavity超空泡流supercavity flow空气动力学aerodynamics低速空气动力学low-speed aerodynamics 高速空气动力学high-speed aerodynamics 气动热力学aerothermodynamics亚声速流[动] subsonic flow跨声速流[动] transonic flow超声速流[动] supersonic flow锥形流conical flow楔流wedge flow叶栅流cascade flow非平衡流[动] non-equilibrium flow细长体slender body细长度slenderness钝头体bluff body钝体blunt body翼型airfoil翼弦chord薄翼理论thin-airfoil theory构型configuration后缘trailing edge迎角angle of attack失速stall脱体激波detached shock wave波阻wave drag诱导阻力induced drag诱导速度induced velocity临界雷诺数critical Reynolds number前缘涡leading edge vortex附着涡bound vortex约束涡confined vortex气动中心aerodynamic center气动力aerodynamic force气动噪声aerodynamic noise气动加热aerodynamic heating离解dissociation地面效应ground effect气体动力学gas dynamics稀疏波rarefaction wave热状态方程thermal equation of state喷管Nozzle普朗特-迈耶流Prandtl-Meyer flow瑞利流Rayleigh flow可压缩流[动] compressible flow可压缩流体compressible fluid绝热流adiabatic flow非绝热流diabatic flow未扰动流undisturbed flow等熵流isentropic flow匀熵流homoentropic flow兰金-于戈尼奥条件Rankine-Hugoniot condition 状态方程equation of state量热状态方程caloric equation of state完全气体perfect gas拉瓦尔喷管Laval nozzle马赫角Mach angle马赫锥Mach cone马赫线Mach line马赫数Mach number马赫波Mach wave当地马赫数local Mach number冲击波shock wave激波shock wave正激波normal shock wave斜激波oblique shock wave头波bow wave附体激波attached shock wave激波阵面shock front激波层shock layer压缩波compression wave反射reflection折射refraction散射scattering衍射diffraction绕射diffraction出口压力exit pressure超压[强] over pressure反压back pressure爆炸explosion爆轰detonation缓燃deflagration水动力学hydrodynamics液体动力学hydrodynamics泰勒不稳定性Taylor instability盖斯特纳波Gerstner wave斯托克斯波Stokes wave瑞利数Rayleigh number自由面free surface波速wave speed, wave velocity 波高wave height波列wave train波群wave group波能wave energy表面波surface wave表面张力波capillary wave规则波regular wave不规则波irregular wave浅水波shallow water wave深水波deep water wave重力波gravity wave椭圆余弦波cnoidal wave潮波tidal wave涌波surge wave破碎波breaking wave船波ship wave非线性波nonlinear wave孤立子soliton水动[力]噪声hydrodynamic noise 水击water hammer空化cavitation空化数cavitation number空蚀cavitation damage超空化流supercavitating flow水翼hydrofoil水力学hydraulics洪水波flood wave涟漪ripple消能energy dissipation海洋水动力学marine hydrodynamics谢齐公式Chezy formula欧拉数Euler number弗劳德数Froude number水力半径hydraulic radius水力坡度hvdraulic slope高度水头elevating head水头损失head loss水位water level水跃hydraulic jump含水层aquifer排水drainage排放量discharge壅水曲线back water curve压[强水]头pressure head过水断面flow cross-section明槽流open channel flow孔流orifice flow无压流free surface flow有压流pressure flow缓流subcritical flow急流supercritical flow渐变流gradually varied flow急变流rapidly varied flow临界流critical flow异重流density current, gravity flow堰流weir flow掺气流aerated flow含沙流sediment-laden stream降水曲线dropdown curve沉积物sediment, deposit沉[降堆]积sedimentation, deposition沉降速度settling velocity流动稳定性flow stability不稳定性instability奥尔-索末菲方程Orr-Sommerfeld equation涡量方程vorticity equation泊肃叶流Poiseuille flow奥辛流Oseen flow剪切流shear flow粘性流[动] viscous flow层流laminar flow分离流separated flow二次流secondary flow近场流near field flow远场流far field flow滞止流stagnation flow尾流wake [flow]回流back flow反流reverse flow射流jet自由射流free jet管流pipe flow, tube flow内流internal flow拟序结构coherent structure 猝发过程bursting process表观粘度apparent viscosity 运动粘性kinematic viscosity 动力粘性dynamic viscosity泊poise厘泊centipoise厘沱centistoke剪切层shear layer次层sublayer流动分离flow separation层流分离laminar separation 湍流分离turbulent separation 分离点separation point附着点attachment point再附reattachment再层流化relaminarization起动涡starting vortex驻涡standing vortex涡旋破碎vortex breakdown涡旋脱落vortex shedding压[力]降pressure drop压差阻力pressure drag压力能pressure energy型阻profile drag滑移速度slip velocity无滑移条件non-slip condition壁剪应力skin friction, frictional drag壁剪切速度friction velocity磨擦损失friction loss磨擦因子friction factor耗散dissipation滞后lag相似性解similar solution局域相似local similarity气体润滑gas lubrication液体动力润滑hydrodynamic lubrication浆体slurry泰勒数Taylor number纳维-斯托克斯方程Navier-Stokes equation 牛顿流体Newtonian fluid边界层理论boundary later theory边界层方程boundary layer equation边界层boundary layer附面层boundary layer层流边界层laminar boundary layer湍流边界层turbulent boundary layer温度边界层thermal boundary layer边界层转捩boundary layer transition边界层分离boundary layer separation边界层厚度boundary layer thickness位移厚度displacement thickness能量厚度energy thickness焓厚度enthalpy thickness注入injection吸出suction泰勒涡Taylor vortex速度亏损律velocity defect law形状因子shape factor测速法anemometry粘度测定法visco[si] metry流动显示flow visualization油烟显示oil smoke visualization孔板流量计orifice meter频率响应frequency response油膜显示oil film visualization阴影法shadow method纹影法schlieren method烟丝法smoke wire method丝线法tuft method氢泡法nydrogen bubble method相似理论similarity theory相似律similarity law部分相似partial similarity定理pi theorem, Buckingham theorem静[态]校准static calibration动态校准dynamic calibration风洞wind tunnel激波管shock tube激波管风洞shock tube wind tunnel水洞water tunnel拖曳水池towing tank旋臂水池rotating arm basin扩散段diffuser测压孔pressure tap皮托管pitot tube普雷斯顿管preston tube斯坦顿管Stanton tube文丘里管Venturi tubeU形管U-tube压强计manometer微压计micromanometer多管压强计multiple manometer静压管static [pressure]tube流速计anemometer风速管Pitot- static tube激光多普勒测速计laser Doppler anemometer, laser Doppler velocimeter 热线流速计hot-wire anemometer热膜流速计hot- film anemometer流量计flow meter粘度计visco[si] meter涡量计vorticity meter传感器transducer, sensor压强传感器pressure transducer热敏电阻thermistor示踪物tracer时间线time line脉线streak line尺度效应scale effect壁效应wall effect堵塞blockage堵寒效应blockage effect动态响应dynamic response响应频率response frequency底压base pressure菲克定律Fick law巴塞特力Basset force埃克特数Eckert number格拉斯霍夫数Grashof number努塞特数Nusselt number普朗特数prandtl number雷诺比拟Reynolds analogy施密特数schmidt number斯坦顿数Stanton number对流convection自由对流natural convection, free convec-tion 强迫对流forced convection热对流heat convection质量传递mass transfer传质系数mass transfer coefficient热量传递heat transfer传热系数heat transfer coefficient对流传热convective heat transfer辐射传热radiative heat transfer动量交换momentum transfer能量传递energy transfer传导conduction热传导conductive heat transfer热交换heat exchange临界热通量critical heat flux浓度concentration扩散diffusion扩散性diffusivity扩散率diffusivity扩散速度diffusion velocity分子扩散molecular diffusion沸腾boiling蒸发evaporation气化gasification凝结condensation成核nucleation计算流体力学computational fluid mechanics 多重尺度问题multiple scale problem伯格斯方程Burgers equation对流扩散方程convection diffusion equation KDU方程KDV equation修正微分方程modified differential equation拉克斯等价定理Lax equivalence theorem数值模拟numerical simulation大涡模拟large eddy simulation数值粘性numerical viscosity非线性不稳定性nonlinear instability希尔特稳定性分析Hirt stability analysis相容条件consistency conditionCFL条件Courant- Friedrichs- Lewy condition ,CFL condition 狄里克雷边界条件Dirichlet boundary condition熵条件entropy condition远场边界条件far field boundary condition流入边界条件inflow boundary condition无反射边界条件nonreflecting boundary condition数值边界条件numerical boundary condition流出边界条件outflow boundary condition冯.诺伊曼条件von Neumann condition近似因子分解法approximate factorization method人工压缩artificial compression人工粘性artificial viscosity边界元法boundary element method配置方法collocation method能量法energy method有限体积法finite volume method流体网格法fluid in cell method, FLIC method通量校正传输法flux-corrected transport method通量矢量分解法flux vector splitting method伽辽金法Galerkin method积分方法integral method标记网格法marker and cell method, MAC method特征线法method of characteristics直线法method of lines矩量法moment method多重网格法multi- grid method板块法panel method质点网格法particle in cell method, PIC method质点法particle method预估校正法predictor-corrector method投影法projection method准谱法pseudo-spectral method随机选取法random choice method激波捕捉法shock-capturing method激波拟合法shock-fitting method谱方法spectral method稀疏矩阵分解法split coefficient matrix method不定常法time-dependent method时间分步法time splitting method变分法variational method涡方法vortex method隐格式implicit scheme显格式explicit scheme交替方向隐格式alternating direction implicit scheme, ADI scheme 反扩散差分格式anti-diffusion difference scheme紧差分格式compact difference scheme守恒差分格式conservation difference scheme克兰克-尼科尔森格式Crank-Nicolson scheme杜福特-弗兰克尔格式Dufort-Frankel scheme指数格式exponential scheme戈本诺夫格式Godunov scheme高分辨率格式high resolution scheme拉克斯-温德罗夫格式Lax-Wendroff scheme蛙跳格式leap-frog scheme单调差分格式monotone difference scheme保单调差分格式monotonicity preserving difference scheme穆曼-科尔格式Murman-Cole scheme半隐格式semi-implicit scheme斜迎风格式skew-upstream scheme全变差下降格式total variation decreasing scheme TVD scheme迎风格式upstream scheme , upwind scheme计算区域computational domain物理区域physical domain影响域domain of influence依赖域domain of dependence区域分解domain decomposition维数分解dimensional split物理解physical solution弱解weak solution黎曼解算子Riemann solver守恒型conservation form弱守恒型weak conservation form强守恒型strong conservation form散度型divergence form贴体曲线坐标body- fitted curvilinear coordi-nates[自]适应网格[self-] adaptive mesh适应网格生成adaptive grid generation自动网格生成automatic grid generation数值网格生成numerical grid generation交错网格staggered mesh网格雷诺数cell Reynolds number数植扩散numerical diffusion数值耗散numerical dissipation数值色散numerical dispersion数值通量numerical flux放大因子amplification factor放大矩阵amplification matrix阻尼误差damping error离散涡discrete vortex熵通量entropy flux熵函数entropy function分步法fractional step method广义连续统力学generalized continuum mechanics简单物质simple material纯力学物质purely mechanical material微分型物质material of differential type积分型物质material of integral type混合物组份constituents of a mixture非协调理论incompatibility theory微极理论micropolar theory决定性原理principle of determinism等存在原理principle of equipresence局部作用原理principle of objectivity客观性原理principle of objectivity电磁连续统理论theory of electromagnetic continuum 内时理论endochronic theory非局部理论nonlocal theory混合物理论theory of mixtures里夫林-矣里克森张量Rivlin-Ericksen tensor声张量acoustic tensor半向同性张量hemitropic tensor各向同性张量isotropic tensor应变张量strain tensor伸缩张量stretch tensor连续旋错continuous dislination连续位错continuous dislocation动量矩平衡angular momentum balance余本构关系complementary constitutive relations共旋导数co-rotational derivative, Jaumann derivative 非完整分量anholonomic component爬升效应climbing effect协调条件compatibility condition错综度complexity当时构形current configuration能量平衡energy balance变形梯度deformation gradient有限弹性finite elasticity熵增entropy production标架无差异性frame indifference弹性势elastic potential熵不等式entropy inequality极分解polar decomposition低弹性hypoelasticity参考构形reference configuration响应泛函response functional动量平衡momentum balance奇异面singular surface贮能函数stored-energy function内部约束internal constraint物理分量physical components本原元primitive element普适变形universal deformation速度梯度velocity gradient测粘流动viscometric flow当地导数local derivative岩石力学rock mechanics原始岩体应力virgin rock stress构造应力tectonic stress三轴压缩试验three-axial compression test 三轴拉伸试验three-axial tensile test三轴试验triaxial test岩层静态应力lithostatic stress吕荣lugeon地压强geostatic pressure水力劈裂hydraulic fracture咬合[作用] interlocking内禀抗剪强度intrinsic shear strength循环抗剪强度cyclic shear strength残余抗剪强度residual shear strength土力学soil mechanics孔隙比void ratio内磨擦角angle of internal friction休止角angle of repose孔隙率porosity围压ambient pressure渗透系数coefficient of permeability [抗]剪切角angle of shear resistance渗流力seepage force表观粘聚力apparent cohesion粘聚力cohesion稠度consistency固结consolidation主固结primary consolidation次固结secondary consolidation固结仪consolidometer浮升力uplift扩容dilatancy有效应力effective stress絮凝[作用] flocculation主动土压力active earth pressure 被动土压力passive earth pressure 土动力学soil dynamics应力解除stress relief次时间效应secondary time effect 贯入阻力penetration resistance沙土液化liquefaction of sand泥流mud flow多相流multiphase flow马格努斯效应Magnus effect韦伯数Weber number环状流annular flow泡状流bubble flow层状流stratified flow平衡流equilibrium flow二组份流two-component flow冻结流frozen flow均质流homogeneous flow二相流two-phase flow气-液流gas-liquid flow气-固流gas-solid flow液-气流liquid-gas flow液-固流liquid-solid flow液体-蒸气流liquid-vapor flow浓相dense phase稀相dilute phase连续相continuous phase离散相dispersed phase悬浮suspension气力输运pneumatic transport气泡形成bubble formation体密度bulk density壅塞choking微滴droplet挟带entrainment流型flow pattern流[态]化fluidization界面interface跃动速度saltation velocity非牛顿流体力学non-Newtonian fluid mechanics非牛顿流体non-Newtonian fluid幂律流体power law fluid拟塑性流体pseudoplastic fluid触稠流体rheopectic fluid触变流体thixotropic fluid粘弹性流体viscoelastic fluid流变测量学rheometry震凝性rheopexy体[积]粘性bulk viscosity魏森贝格效应Weissenberg effect流变仪rheometer稀薄气体动力学rarefied gas dynamics物理化学流体力学physico-chemical hydrodynamics 空气热化学aerothermochemistry绝对压强absolute pressure绝对反应速率absolute reaction rate绝对温度absolute temperature吸收系数absorption coefficient活化分子activated molecule活化能activation energy绝热压缩adiabatic compression绝热膨胀adiabatic expansion绝热火焰温度adiabatic flame temperature电弧风洞arc tunnel原子热atomic heat雾化atomization自燃auto-ignition自动氧化auto-oxidation可用能量available energy缓冲作用buffer action松密度bulk density燃烧率burning rate燃烧速度burning velocity接触面contact surface烧蚀ablation弹性力学elasticity弹性理论theory of elasticity均匀应力状态homogeneous state of stress应力不变量stress invariant应变不变量strain invariant应变椭球strain ellipsoid均匀应变状态homogeneous state of strain应变协调方程equation of strain compatibility拉梅常量Lame constants各向同性弹性isotropic elasticity旋转圆盘rotating circular disk楔wedge开尔文问题Kelvin problem布西内斯克问题Boussinesq problem艾里应力函数Airy stress function克罗索夫-穆斯赫利什维利法Kolosoff-Muskhelishvili method 基尔霍夫假设Kirchhoff hypothesis板Plate矩形板Rectangular plate圆板Circular plate环板Annular plate波纹板Corrugated plate加劲板Stiffened plate,reinforced Plate中厚板Plate of moderate thickness弯[曲]应力函数Stress function of bending壳Shell扁壳Shallow shell旋转壳Revolutionary shell球壳Spherical shell[圆]柱壳Cylindrical shell锥壳Conical shell环壳Toroidal shell封闭壳Closed shell波纹壳Corrugated shell扭[转]应力函数Stress function of torsion翘曲函数Warping function半逆解法semi-inverse method瑞利--里茨法Rayleigh-Ritz method松弛法Relaxation method莱维法Levy method松弛Relaxation量纲分析Dimensional analysis自相似[性] self-similarity影响面Influence surface接触应力Contact stress赫兹理论Hertz theory协调接触Conforming contact滑动接触Sliding contact滚动接触Rolling contact压入Indentation各向异性弹性Anisotropic elasticity颗粒材料Granular material散体力学Mechanics of granular media 热弹性Thermoelasticity超弹性Hyperelasticity粘弹性Viscoelasticity对应原理Correspondence principle褶皱Wrinkle塑性全量理论Total theory of plasticity 滑动Sliding微滑Microslip粗糙度Roughness非线性弹性Nonlinear elasticity大挠度Large deflection突弹跳变snap-through有限变形Finite deformation格林应变Green strain阿尔曼西应变Almansi strain弹性动力学Dynamic elasticity运动方程Equation of motion准静态的Quasi-static气动弹性Aeroelasticity水弹性Hydroelasticity颤振Flutter弹性波Elastic wave简单波Simple wave柱面波Cylindrical wave水平剪切波Horizontal shear wave竖直剪切波Vertical shear wave体波body wave无旋波Irrotational wave畸变波Distortion wave膨胀波Dilatation wave瑞利波Rayleigh wave等容波Equivoluminal wave勒夫波Love wave界面波Interfacial wave边缘效应edge effect塑性力学Plasticity可成形性Formability金属成形Metal forming。
多晶硅工艺中英文对照表
多晶硅工艺中英文对照表硅烷(SiH4)：Silane二氧化硅(SiO2) ：Silica一氯三氢硅(SiH3Cl)：Monochlorosilane二氯二氢硅(SiH2Cl2)：Dichlorosilane(DCS)三氯氢硅(SiHCl3)：Trichlorosilane(TCS)四氯化硅(SiCl4)：Silicon Tetrachloride(STC)冶金级硅：Metallurgical-Grade Silicon(MG-Si)多晶硅：Polycrystalline Silicon(Polysilicon)单晶硅：Single Crystal(Crystal)硅树脂：Silicone硅油：Silicon Oil载气：Carrier Gas粉末二氧化硅：Fumed Silica光纤：Fiber optil外延层：Epitaxial Layer非晶(无定形)层：Amorphous Layer多晶层：Polysilicon Layer化学汽相沉积工艺：Chemical-vapor-deposition processes 棒状、块状多晶硅：Rod、Chunk Polysilicon少数载流子寿命：Minority Carrir life-time晶格：Crystallographic Lattice施主杂质：Dopant impurity受主杂质：Accept impurity氧：Oxygen碳：Carbon重金属：Heavy metals蒸汽压：V apor Pressure密度：Density热容：Heat Capacity自由能：Free Energy标准焓：Standart Enthalpy标准熵：Standart Entropy表面张力：Surface Tension粘度：Viscosity热导率：Thermal Conductivity转换效率：Conversion Efficiency沉积速率：Deposition Rate催化剂：Catalytic agent偶联剂：Coupling agent表压（磅/平方英吋）Psig：（pounds per square inch gauge）蒸发：Evaporate溶解：Dissolve浓缩、凝缩：Condensation浓度、浓缩：Concentration吸收：Absorb吸附：Adsoption蒸馏：Dislillation置换：Replacement捕获、收集：Capture分解：Decompose分裂：Dissociation污染：Contaminate腐蚀性：Corrosive汽态吸收：Gaseous Absorption全闭路循环：Fully Closed-loop水解反应：Hydrolysis Reaction氢气中TCS的分子比率：Mole ration of TCS in H2 着火：Ignition发烟：Smoke起火：Fire燃烧：Burn爆炸：Explosion活性碳柱：Activated Carbon Column薄雾淋洗塔：Falling film tower流化床反应炉(FBR)：Fluidied Bed Reactor 石英钟罩反应炉：Quartz bell jar reactor金属钟罩反应炉：Metal bell jar reactor氯硅烷主要反应式：SiO2+2C→Si+2CO (由石英石制备工业硅)Si+3HCl→SiHCl3+H2 (沸腾氯化制取三氯氢硅)3SiCl4+2H2+Si+Cu催化剂→4SiHCl3(~800℃3Mpa 约37%的转化率) (四氯化硅氢化生成三氯氢硅)SiHCl3+H2→Si+3HCl(~1375K) (三氯氢硅氢还原制备多晶硅)SiHCl3+HCl→SiCl4+H23 SiHCl3→Si+2 SiCl4+HCl+ H22 SiHCl3→SiH2Cl2+ SiCl42 SiH2Cl2→SiH3Cl+ SiHCl3硅烷（SiH4 ）的四种制备方法1、由四氯化硅与氢化鋰反应4LiH+ SiCl4→SiH4+4LiCl2、由硅镁合金与氯化氨反应Mg2Si+4NH4Cl→SiH4+2MgCl+4NH33、由一氯三氢硅分解2 SiH3Cl→SiH4+ SiH2Cl24、Ethyl公司早期开发的硅烷制备工艺：它是用过磷酸钙肥料工业的副产品（a by-product from the superphosphate fertilizer industry）氟硅酸（H2SiF6）作原料，主要的反应式为：H2SiF6 +H2SO4→SiF4+2HFSiF4+LiH→SiH4+4LiF(在二苯基乙醚里，525K)LiH是用金属鋰在矿物油里与氢反应而制得，收率可达90%Handbook of Semiconductor Silicon Technology序Semiconductor silicon has become the most important and characteristic material of our age-the silicon age. It has achieved this distinction with a rather modest volume of production as compared to that of other basic industrial materials. For example, in 1989, about 6000 metric tons of polysilicon were produced worldwide for silicon crystal growth, resulting in 3000 tons of crystal produced in the United States, Japan, and Europe. This silicon crystal was converted to approximately 1500 million square inches of wafer, or about 90 million individual wafers used for integrated circuit and discrete device production. For comparison, the annual worldwide production of steel and aluminum amounts to hundreds of thousands of tons.半导体硅材料已成为我们这个时代---硅时代最重要和最有代表性的材料，虽然它的产量还不够大，但其重要性却引人瞩目。
The Fundamentals of Digital Semiconductor Testing (chinese)
目录第一章.认识半导体和测试设备 (3)一、晶圆、晶片和封装 (3)二、自动测试设备 (6)三、半导体技术 (7)四、数字和模拟电路 (7)五、测试系统的种类 (8)六、测试负载板(LoadBoard) (11)七、探针卡（ProbeCard） (12)第二章.半导体测试基础 (13)一、基础术语 (13)二、正确的测试方法 (14)三、测试系统 (16)四、PMU (18)五、管脚电路 (21)第三章.基于PMU的开短路测试 (25)一、测试目的 (25)二、测试方法 (25)第四章.DC参数测试 (29)一、基本术语 (29)二、Binning (29)三、Program Flow (30)四、Test Summary (31)五、DC测试与隐藏电阻 (32)六、VOH/IOH (33)七、VOL/IOL (36)八、IDD Gross Current (39)九、IDD Static Current (42)十、IDDQ (44)十一、IDD Dynamic Current (45)十二、入电流（IIL/IIH）测试 (48)十三、输入结构－高阻/上拉/下拉 (54)十四、输出扇出 (55)十五、高阻电流（High Impedance Currents, IOZH/IOZL） (57)十六、输出短路电流（output short circuit current） (60)第五章．功能测试 (63)一、基础术语 (64)二、功能测试 (64)三、测试周期 (65)四、输入数据 (65)五、输出数据 (68)六、功能测试参数定义 (72)七、总功能测试（Gross Function Test） (73)八、功能测试实例 (77)九、标准功能测试 (80)第六章.AC参数测试 (91)第一章.认识半导体和测试设备本章节包括以下内容，●晶圆（Wafers）、晶片（Dice）和封装（Packages）●自动测试设备（ATE）的总体认识●模拟、数字和存储器测试等系统的介绍●负载板（Loadboards）、探测机（Probers）、机械手（Handlers）和温度控制单元（Temperature units）一、晶圆、晶片和封装1947年，第一只晶体管的诞生标志着半导体工业的开始，从那时起，半导体生产和制造技术变得越来越重要。
力学名词英文翻译
力学通类名词力学 mechanics牛顿力学 Newtonian mechanics经典力学 classical mechanics静力学 statics运动学 kinematics动力学 dynamics动理学 kinetics宏观力学 macroscopic mechanics,macromechanics 细观力学 mesomechanics微观力学 microscopic mechanics,micromechanics 一般力学 general mechanics固体力学 solid mechanics流体力学 fluid mechanics理论力学 theoretical mechanics应用力学 applied mechanics工程力学 engineering mechanics实验力学 experimental mechanics计算力学 computational mechanics理性力学 rational mechanics物理力学 physical mechanics地球动力学 geodynamics力 force作用点 point of action作用线 line of action力系 system of forces力系的简化 reduction of force system 等效力系 equivalent force system刚体 rigid body力的可传性 transmissibility of force 平行四边形定则 parallelogram rule力三角形 force triangle力多边形 force polygon零力系 null-force system平衡 equilibrium力的平衡 equilibrium of forces平衡条件 equilibrium condition平衡位置 equilibrium position平衡态 equilibrium state分析力学 analytical mechanics拉格朗日乘子 Lagrange multiplier拉格朗日[量] Lagrangian拉格朗日括号 Lagrange bracket循环坐标 cyclic coordinate循环积分 cyclic integral哈密顿[量] Hamiltonian哈密顿函数 Hamiltonian function正则方程 canonical equation正则摄动 canonical perturbation正则变换 canonical transformation正则变量 canonical variable哈密顿原理 Hamilton principle作用量积分 action integral哈密顿--雅可比方程 Hamilton-Jacobi equation 作用--角度变量 action-angle variables阿佩尔方程 Appell equation劳斯方程 Routh equation拉格朗日函数 Lagrangian function诺特定理 Noether theorem泊松括号 poisson bracket边界积分法 boundary integral method并矢 dyad运动稳定性 stability of motion轨道稳定性 orbital stability李雅普诺夫函数 Lyapunov function渐近稳定性 asymptotic stability结构稳定性 structural stability久期不稳定性 secular instability弗洛凯定理 Floquet theorem倾覆力矩 capsizing moment自由振动 free vibration固有振动 natural vibration暂态 transient state环境振动 ambient vibration反共振 anti-resonance衰减 attenuation库仑阻尼 Coulomb damping同相分量 in-phase component非同相分量 out-of-phase component超调量 overshoot参量[激励]振动 parametric vibration模糊振动 fuzzy vibration临界转速 critical speed of rotation阻尼器 damper半峰宽度 half-peak width集总参量系统 lumped parameter system相平面法 phase plane method相轨迹 phase trajectory等倾线法 isocline method跳跃现象 jump phenomenon负阻尼 negative damping达芬方程 Duffing equation希尔方程 Hill equationKBM方法 KBM method, Krylov-Bogoliu-bov-Mitropol'skii method 马蒂厄方程 Mathieu equation平均法 averaging method组合音调 combination tone解谐 detuning耗散函数 dissipative function硬激励 hard excitation硬弹簧 hard spring, hardening spring谐波平衡法 harmonic balance method久期项 secular term自激振动 self-excited vibration分界线 separatrix亚谐波 subharmonic软弹簧 soft spring ,softening spring软激励 soft excitation邓克利公式 Dunkerley formula瑞利定理 Rayleigh theorem分布参量系统 distributed parameter system 优势频率 dominant frequency模态分析 modal analysis固有模态 natural mode of vibration同步 synchronization超谐波 ultraharmonic范德波尔方程 van der pol equation频谱 frequency spectrum基频 fundamental frequencyWKB方法 WKB method, Wentzel-Kramers-Brillouin method 缓冲器 buffer风激振动 aeolian vibration嗡鸣 buzz倒谱 cepstrum颤动 chatter蛇行 hunting阻抗匹配 impedance matching机械导纳 mechanical admittance机械效率 mechanical efficiency机械阻抗 mechanical impedance随机振动 stochastic vibration, random vibration隔振 vibration isolation减振 vibration reduction应力过冲 stress overshoot喘振 surge摆振 shimmy起伏运动 phugoid motion起伏振荡 phugoid oscillation驰振 galloping陀螺动力学 gyrodynamics陀螺摆 gyropendulum陀螺平台 gyroplatform陀螺力矩 gyroscoopic torque陀螺稳定器 gyrostabilizer陀螺体 gyrostat惯性导航 inertial guidance姿态角 attitude angle方位角 azimuthal angle舒勒周期 Schuler period机器人动力学 robot dynamics多体系统 multibody system多刚体系统 multi-rigid-body system机动性 maneuverability凯恩方法 Kane method转子[系统]动力学 rotor dynamics转子[一支承一基础]系统 rotor-support-foundation system 静平衡 static balancing动平衡 dynamic balancing静不平衡 static unbalance动不平衡 dynamic unbalance现场平衡 field balancing不平衡 unbalance不平衡量 unbalance互耦力 cross force挠性转子 flexible rotor分频进动 fractional frequency precession半频进动 half frequency precession油膜振荡 oil whip转子临界转速 rotor critical speed自动定心 self-alignment亚临界转速 subcritical speed涡动 whirl连续过程 continuous process碰撞截面 collision cross section通用气体常数 conventional gas constant 燃烧不稳定性 combustion instability稀释度 dilution完全离解 complete dissociation火焰传播 flame propagation组份 constituent碰撞反应速率 collision reaction rate 燃烧理论 combustion theory浓度梯度 concentration gradient阴极腐蚀 cathodic corrosion火焰速度 flame speed火焰驻定 flame stabilization火焰结构 flame structure着火 ignition湍流火焰 turbulent flame层流火焰 laminar flame燃烧带 burning zone渗流 flow in porous media, seepage达西定律 Darcy law赫尔-肖流 Hele-Shaw flow毛[细]管流 capillary flow过滤 filtration爪进 fingering不互溶驱替 immiscible displacement不互溶流体 immiscible fluid互溶驱替 miscible displacement互溶流体 miscible fluid迁移率 mobility流度比 mobility ratio渗透率 permeability孔隙度 porosity多孔介质 porous medium比面 specific surface迂曲度 tortuosity空隙 void空隙分数 void fraction注水 water flooding可湿性 wettability地球物理流体动力学 geophysical fluid dynamics 物理海洋学 physical oceanography大气环流 atmospheric circulation海洋环流 ocean circulation海洋流 ocean current旋转流 rotating flow平流 advection埃克曼流 Ekman flow埃克曼边界层 Ekman boundary layer大气边界层 atmospheric boundary layer大气-海洋相互作用 atmosphere-ocean interaction 埃克曼数 Ekman number罗斯贝数 Rossby unmber罗斯贝波 Rossby wave斜压性 baroclinicity正压性 barotropy内磨擦 internal friction海洋波 ocean wave盐度 salinity环境流体力学 environmental fluid mechanics斯托克斯流 Stokes flow羽流 plume理查森数 Richardson number污染源 pollutant source污染物扩散 pollutant diffusion噪声 noise噪声级 noise level噪声污染 noise pollution排放物 effulent工业流体力学 industrical fluid mechanics流控技术 fluidics轴向流 axial flow并向流 co-current flow对向流 counter current flow横向流 cross flow螺旋流 spiral flow旋拧流 swirling flow滞后流 after flow混合层 mixing layer抖振 buffeting风压 wind pressure附壁效应 wall attachment effect, Coanda effect简约频率 reduced frequency爆炸力学 mechanics of explosion终点弹道学 terminal ballistics动态超高压技术 dynamic ultrahigh pressure technique 流体弹塑性体 hydro-elastoplastic medium热塑不稳定性 thermoplastic instability空中爆炸 explosion in air地下爆炸 underground explosion水下爆炸 underwater explosion电爆炸 discharge-induced explosion激光爆炸 laser-induced explosion核爆炸 nuclear explosion点爆炸 point-source explosion殉爆 sympathatic detonation强爆炸 intense explosion粒子束爆炸 explosion by beam radiation 聚爆 implosion起爆 initiation of explosion爆破 blasting霍普金森杆 Hopkinson bar电炮 electric gun电磁炮 electromagnetic gun爆炸洞 explosion chamber轻气炮 light gas gun马赫反射 Mach reflection基浪 base surge成坑 cratering能量沉积 energy deposition爆心 explosion center爆炸当量 explosion equivalent火球 fire ball爆高 height of burst蘑菇云 mushroom侵彻 penetration规则反射 regular reflection崩落 spallation应变率史 strain rate history流变学 rheology聚合物减阻 drag reduction by polymers挤出[物]胀大 extrusion swell, die swell 无管虹吸 tubeless siphon剪胀效应 dilatancy effect孔压[误差]效应 hole-pressure[error]effect 剪切致稠 shear thickening剪切致稀 shear thinning触变性 thixotropy反触变性 anti-thixotropy超塑性 superplasticity粘弹塑性材料 viscoelasto-plastic material 滞弹性材料 anelastic material本构关系 constitutive relation麦克斯韦模型 Maxwell model沃伊特-开尔文模型 Voigt-Kelvin model宾厄姆模型 Bingham model奥伊洛特模型 Oldroyd model幂律模型 power law model应力松驰 stress relaxation应变史 strain history应力史 stress history记忆函数 memory function衰退记忆 fading memory应力增长 stress growing粘度函数 voscosity function相对粘度 relative viscosity复态粘度 complex viscosity拉伸粘度 elongational viscosity拉伸流动 elongational flow第一法向应力差 first normal-stress difference 第二法向应力差 second normal-stress difference 德博拉数 Deborah number魏森贝格数 Weissenberg number动态模量 dynamic modulus振荡剪切流 oscillatory shear flow宇宙气体动力学 cosmic gas dynamics等离[子]体动力学 plasma dynamics电离气体 ionized gas行星边界层 planetary boundary layer阿尔文波 Alfven wave泊肃叶-哈特曼流] Poiseuille-Hartman flow哈特曼数 Hartman number生物流变学 biorheology生物流体 biofluid生物屈服点 bioyield point生物屈服应力 bioyield stress电气体力学 electro-gas dynamics铁流体力学 ferro-hydrodynamics血液流变学 hemorheology, blood rheology血液动力学 hemodynamics磁流体力学 magneto fluid mechanics磁流体动力学 magnetohydrodynamics, MHD磁流体动力波 magnetohydrodynamic wave磁流体流 magnetohydrodynamic flow磁流体动力稳定性 magnetohydrodynamic stability 生物力学 biomechanics生物流体力学 biological fluid mechanics生物固体力学 biological solid mechanics宾厄姆塑性流 Bingham plastic flow开尔文体 Kelvin body沃伊特体 Voigt body可贴变形 applicable deformation可贴曲面 applicable surface边界润滑 boundary lubrication液膜润滑 fluid film lubrication向心收缩功 concentric work离心收缩功 eccentric work关节反作用力 joint reaction force微循环力学 microcyclic mechanics微纤维 microfibril渗透性 permeability生理横截面积 physiological cross-sectional area 农业生物力学 agrobiomechanics纤维度 fibrousness硬皮度 rustiness胶粘度 gumminess粘稠度 stickiness嫩度 tenderness渗透流 osmotic flow易位流 translocation flow蒸腾流 transpirational flow过滤阻力 filtration resistance压扁 wafering风雪流 snow-driving wind停滞堆积 accretion遇阻堆积 encroachment沙漠地面 desert floor流沙固定 fixation of shifting sand流动阈值 fluid threshold固体力学弹性力学 elasticity弹性理论 theory of elasticity均匀应力状态 homogeneous state of stress应力不变量 stress invariant应变不变量 strain invariant应变椭球 strain ellipsoid均匀应变状态 homogeneous state of strain应变协调方程 equation of strain compatibility拉梅常量 Lame constants各向同性弹性 isotropic elasticity旋转圆盘 rotating circular disk楔 wedge开尔文问题 Kelvin problem布西内斯克问题 Boussinesq problem艾里应力函数 Airy stress function克罗索夫--穆斯赫利什维利法 Kolosoff-Muskhelishvili method 基尔霍夫假设 Kirchhoff hypothesis板 Plate矩形板 Rectangular plate圆板 Circular plate环板 Annular plate波纹板 Corrugated plate加劲板 Stiffened plate,reinforced Plate中厚板 Plate of moderate thickness弯[曲]应力函数 Stress function of bending 壳 Shell扁壳 Shallow shell旋转壳 Revolutionary shell球壳 Spherical shell[圆]柱壳 Cylindrical shell锥壳 Conical shell环壳 Toroidal shell封闭壳 Closed shell波纹壳 Corrugated shell扭[转]应力函数 Stress function of torsion 翘曲函数 Warping function半逆解法 semi-inverse method瑞利--里茨法 Rayleigh-Ritz method松弛法 Relaxation method莱维法 Levy method松弛 Relaxation量纲分析 Dimensional analysis自相似[性] self-similarity影响面 Influence surface接触应力 Contact stress赫兹理论 Hertz theory协调接触 Conforming contact滑动接触 Sliding contact滚动接触 Rolling contact压入 Indentation各向异性弹性 Anisotropic elasticity颗粒材料 Granular material散体力学 Mechanics of granular media热弹性 Thermoelasticity超弹性 Hyperelasticity粘弹性 Viscoelasticity对应原理 Correspondence principle褶皱 Wrinkle塑性全量理论 Total theory of plasticity 滑动 Sliding微滑 Microslip粗糙度 Roughness非线性弹性 Nonlinear elasticity大挠度 Large deflection突弹跳变 snap-through有限变形 Finite deformation格林应变 Green strain阿尔曼西应变 Almansi strain弹性动力学 Dynamic elasticity运动方程 Equation of motion准静态的 Quasi-static气动弹性 Aeroelasticity水弹性 Hydroelasticity颤振 Flutter弹性波 Elastic wave简单波 Simple wave柱面波 Cylindrical wave水平剪切波 Horizontal shear wave竖直剪切波 Vertical shear wave体波 body wave无旋波 Irrotational wave畸变波 Distortion wave膨胀波 Dilatation wave瑞利波 Rayleigh wave等容波 Equivoluminal wave勒夫波 Love wave界面波 Interfacial wave边缘效应 edge effect塑性力学 Plasticity可成形性 Formability金属成形 Metal forming耐撞性 Crashworthiness结构抗撞毁性 Structural crashworthiness 拉拔 Drawing破坏机构 Collapse mechanism回弹 Springback挤压 Extrusion冲压 Stamping穿透 Perforation层裂 Spalling塑性理论 Theory of plasticity安定[性]理论 Shake-down theory运动安定定理 kinematic shake-down theorem 静力安定定理 Static shake-down theorem率相关理论 rate dependent theorem载荷因子 load factor加载准则 Loading criterion加载函数 Loading function加载面 Loading surface塑性加载 Plastic loading塑性加载波 Plastic loading wave简单加载 Simple loading比例加载 Proportional loading卸载 Unloading卸载波 Unloading wave冲击载荷 Impulsive load阶跃载荷 step load脉冲载荷 pulse load极限载荷 limit load中性变载 nentral loading拉抻失稳 instability in tension加速度波 acceleration wave本构方程 constitutive equation完全解 complete solution名义应力 nominal stress过应力 over-stress真应力 true stress等效应力 equivalent stress流动应力 flow stress应力间断 stress discontinuity应力空间 stress space主应力空间 principal stress space静水应力状态 hydrostatic state of stress 对数应变 logarithmic strain工程应变 engineering strain等效应变 equivalent strain应变局部化 strain localization应变率 strain rate应变率敏感性 strain rate sensitivity应变空间 strain space有限应变 finite strain塑性应变增量 plastic strain increment累积塑性应变 accumulated plastic strain 永久变形 permanent deformation内变量 internal variable应变软化 strain-softening理想刚塑性材料 rigid-perfectly plastic Material 刚塑性材料 rigid-plastic material理想塑性材料 perfectl plastic material材料稳定性 stability of material应变偏张量 deviatoric tensor of strain应力偏张量 deviatori tensor of stress应变球张量 spherical tensor of strain应力球张量 spherical tensor of stress路径相关性 path-dependency线性强化 linear strain-hardening应变强化 strain-hardening随动强化 kinematic hardening各向同性强化 isotropic hardening强化模量 strain-hardening modulus幂强化 power hardening塑性极限弯矩 plastic limit bending Moment塑性极限扭矩 plastic limit torque弹塑性弯曲 elastic-plastic bending弹塑性交界面 elastic-plastic interface弹塑性扭转 elastic-plastic torsion粘塑性 Viscoplasticity非弹性 Inelasticity理想弹塑性材料 elastic-perfectly plastic Material 极限分析 limit analysis极限设计 limit design极限面 limit surface上限定理 upper bound theorem上屈服点 upper yield point下限定理 lower bound theorem下屈服点 lower yield point界限定理 bound theorem初始屈服面 initial yield surface后继屈服面 subsequent yield surface屈服面[的]外凸性 convexity of yield surface截面形状因子 shape factor of cross-section沙堆比拟 sand heap analogy屈服 Yield屈服条件 yield condition屈服准则 yield criterion屈服函数 yield function屈服面 yield surface塑性势 plastic potential能量吸收装置 energy absorbing device能量耗散率 energy absorbing device塑性动力学 dynamic plasticity塑性动力屈曲 dynamic plastic buckling塑性动力响应 dynamic plastic response塑性波 plastic wave运动容许场 kinematically admissible Field静力容许场 statically admissible Field流动法则 flow rule速度间断 velocity discontinuity滑移线 slip-lines滑移线场 slip-lines field移行塑性铰 travelling plastic hinge塑性增量理论 incremental theory of Plasticity米泽斯屈服准则 Mises yield criterion普朗特--罗伊斯关系 prandtl- Reuss relation特雷斯卡屈服准则 Tresca yield criterion洛德应力参数 Lode stress parameter莱维--米泽斯关系 Levy-Mises relation亨基应力方程 Hencky stress equation赫艾--韦斯特加德应力空间 Haigh-Westergaard stress space 洛德应变参数 Lode strain parameter德鲁克公设 Drucker postulate盖林格速度方程 Geiringer velocity Equation结构力学 structural mechanics结构分析 structural analysis结构动力学 structural dynamics拱 Arch三铰拱 three-hinged arch抛物线拱 parabolic arch圆拱 circular arch穹顶 Dome空间结构 space structure空间桁架 space truss雪载[荷] snow load风载[荷] wind load土压力 earth pressure地震载荷 earthquake loading弹簧支座 spring support支座位移 support displacement支座沉降 support settlement超静定次数 degree of indeterminacy 机动分析 kinematic analysis结点法 method of joints截面法 method of sections结点力 joint forces共轭位移 conjugate displacement影响线 influence line三弯矩方程 three-moment equation 单位虚力 unit virtual force刚度系数 stiffness coefficient柔度系数 flexibility coefficient力矩分配 moment distribution力矩分配法 moment distribution method力矩再分配 moment redistribution分配系数 distribution factor矩阵位移法 matri displacement method单元刚度矩阵 element stiffness matrix单元应变矩阵 element strain matrix总体坐标 global coordinates贝蒂定理 Betti theorem高斯--若尔当消去法 Gauss-Jordan elimination Method 屈曲模态 buckling mode复合材料力学 mechanics of composites复合材料 composite material纤维复合材料 fibrous composite单向复合材料 unidirectional composite泡沫复合材料 foamed composite颗粒复合材料 particulate composite层板 Laminate夹层板 sandwich panel正交层板 cross-ply laminate斜交层板 angle-ply laminate层片 Ply多胞固体 cellular solid膨胀 Expansion压实 Debulk劣化 Degradation脱层 Delamination脱粘 Debond纤维应力 fiber stress层应力 ply stress层应变 ply strain层间应力 interlaminar stress比强度 specific strength强度折减系数 strength reduction factor 强度应力比 strength -stress ratio横向剪切模量 transverse shear modulus 横观各向同性 transverse isotropy正交各向异 Orthotropy剪滞分析 shear lag analysis短纤维 chopped fiber长纤维 continuous fiber纤维方向 fiber direction纤维断裂 fiber break纤维拔脱 fiber pull-out纤维增强 fiber reinforcement致密化 Densification最小重量设计 optimum weight design网格分析法 netting analysis混合律 rule of mixture失效准则 failure criterion蔡--吴失效准则 Tsai-W u failure criterion达格代尔模型 Dugdale model断裂力学 fracture mechanics概率断裂力学 probabilistic fracture Mechanics格里菲思理论 Griffith theory线弹性断裂力学 linear elastic fracture mechanics, LEFM 弹塑性断裂力学 elastic-plastic fracture mecha-nics, EPFM 断裂 Fracture脆性断裂 brittle fracture解理断裂 cleavage fracture蠕变断裂 creep fracture延性断裂 ductile fracture晶间断裂 inter-granular fracture准解理断裂 quasi-cleavage fracture穿晶断裂 trans-granular fracture裂纹 Crack裂缝 Flaw缺陷 Defect割缝 Slit微裂纹 Microcrack折裂 Kink椭圆裂纹 elliptical crack深埋裂纹 embedded crack[钱]币状裂纹 penny-shape crack预制裂纹 Precrack短裂纹 short crack表面裂纹 surface crack裂纹钝化 crack blunting裂纹分叉 crack branching裂纹闭合 crack closure裂纹前缘 crack front裂纹嘴 crack mouth裂纹张开角 crack opening angle,COA裂纹张开位移 crack opening displacement, COD裂纹阻力 crack resistance裂纹面 crack surface裂纹尖端 crack tip裂尖张角 crack tip opening angle, CTOA裂尖张开位移 crack tip opening displacement, CTOD 裂尖奇异场 crack tip singularity Field裂纹扩展速率 crack growth rate稳定裂纹扩展 stable crack growth定常裂纹扩展 steady crack growth亚临界裂纹扩展 subcritical crack growth裂纹[扩展]减速 crack retardation止裂 crack arrest止裂韧度 arrest toughness断裂类型 fracture mode滑开型 sliding mode张开型 opening mode撕开型 tearing mode复合型 mixed mode撕裂 Tearing撕裂模量 tearing modulus断裂准则 fracture criterionJ积分 J-integralJ阻力曲线 J-resistance curve断裂韧度 fracture toughness应力强度因子 stress intensity factorHRR场 Hutchinson-Rice-Rosengren Field守恒积分 conservation integral有效应力张量 effective stress tensor应变能密度 strain energy density能量释放率 energy release rate内聚区 cohesive zone塑性区 plastic zone张拉区 stretched zone热影响区 heat affected zone, HAZ延脆转变温度 brittle-ductile transition temperature 剪切带 shear band剪切唇 shear lip无损检测 non-destructive inspection双边缺口试件 double edge notched specimen, DEN specimen单边缺口试件 single edge notched specimen, SEN specimen三点弯曲试件 three point bending specimen, TPB specimen中心裂纹拉伸试件 center cracked tension specimen, CCT specimen 中心裂纹板试件 center cracked panel specimen, CCP specimen紧凑拉伸试件 compact tension specimen, CT specimen大范围屈服 large scale yielding小范围攻屈服 small scale yielding韦布尔分布 Weibull distribution帕里斯公式 paris formula空穴化 Cavitation应力腐蚀 stress corrosion概率风险判定 probabilistic risk assessment, PRA损伤力学 damage mechanics损伤 Damage连续介质损伤力学 continuum damage mechanics细观损伤力学 microscopic damage mechanics累积损伤 accumulated damage脆性损伤 brittle damage延性损伤 ductile damage宏观损伤 macroscopic damage细观损伤 microscopic damage微观损伤 microscopic damage损伤准则 damage criterion损伤演化方程 damage evolution equation 损伤软化 damage softening损伤强化 damage strengthening损伤张量 damage tensor损伤阈值 damage threshold损伤变量 damage variable损伤矢量 damage vector损伤区 damage zone疲劳 Fatigue低周疲劳 low cycle fatigue应力疲劳 stress fatigue随机疲劳 random fatigue蠕变疲劳 creep fatigue腐蚀疲劳 corrosion fatigue疲劳损伤 fatigue damage疲劳失效 fatigue failure疲劳断裂 fatigue fracture疲劳裂纹 fatigue crack疲劳寿命 fatigue life疲劳破坏 fatigue rupture疲劳强度 fatigue strength疲劳辉纹 fatigue striations疲劳阈值 fatigue threshold交变载荷 alternating load交变应力 alternating stress应力幅值 stress amplitude应变疲劳 strain fatigue应力循环 stress cycle应力比 stress ratio安全寿命 safe life过载效应 overloading effect循环硬化 cyclic hardening循环软化 cyclic softening环境效应 environmental effect裂纹片 crack gage裂纹扩展 crack growth, crack Propagation 裂纹萌生 crack initiation循环比 cycle ratio实验应力分析 experimental stress Analysis 工作[应变]片 active[strain] gage基底材料 backing material应力计 stress gage零[点]飘移 zero shift, zero drift应变测量 strain measurement应变计 strain gage应变指示器 strain indicator应变花 strain rosette应变灵敏度 strain sensitivity机械式应变仪 mechanical strain gage直角应变花 rectangular rosette引伸仪 Extensometer应变遥测 telemetering of strain横向灵敏系数 transverse gage factor横向灵敏度 transverse sensitivity焊接式应变计 weldable strain gage平衡电桥 balanced bridge粘贴式应变计 bonded strain gage粘贴箔式应变计 bonded foiled gage粘贴丝式应变计 bonded wire gage桥路平衡 bridge balancing电容应变计 capacitance strain gage补偿片 compensation technique补偿技术 compensation technique基准电桥 reference bridge电阻应变计 resistance strain gage温度自补偿应变计 self-temperature compensating gage 半导体应变计 semiconductor strain Gage集流器 slip ring应变放大镜 strain amplifier疲劳寿命计 fatigue life gage电感应变计 inductance [strain] gage光[测]力学 Photomechanics光弹性 Photoelasticity光塑性 Photoplasticity杨氏条纹 Young fringe双折射效应 birefrigent effect等位移线 contour of equal Displacement暗条纹 dark fringe条纹倍增 fringe multiplication干涉条纹 interference fringe等差线 Isochromatic等倾线 Isoclinic等和线 isopachic应力光学定律 stress- optic law主应力迹线 Isostatic亮条纹 light fringe光程差 optical path difference热光弹性 photo-thermo -elasticity光弹性贴片法 photoelastic coating Method 光弹性夹片法 photoelastic sandwich Method 动态光弹性 dynamic photo-elasticity空间滤波 spatial filtering空间频率 spatial frequency起偏镜 Polarizer反射式光弹性仪 reflection polariscope残余双折射效应 residual birefringent Effect应变条纹值 strain fringe value应变光学灵敏度 strain-optic sensitivity应力冻结效应 stress freezing effect应力条纹值 stress fringe value应力光图 stress-optic pattern暂时双折射效应 temporary birefringent Effect脉冲全息法 pulsed holography透射式光弹性仪 transmission polariscope实时全息干涉法 real-time holographic interferometry网格法 grid method全息光弹性法 holo-photoelasticity全息图 Hologram全息照相 Holograph全息干涉法 holographic interferometry全息云纹法 holographic moire technique全息术 Holography全场分析法 whole-field analysis散斑干涉法 speckle interferometry散斑 Speckle错位散斑干涉法 speckle-shearing interferometry, shearography 散斑图 Specklegram白光散斑法 white-light speckle method云纹干涉法 moire interferometry[叠栅]云纹 moire fringe[叠栅]云纹法 moire method云纹图 moire pattern离面云纹法 off-plane moire method参考栅 reference grating试件栅 specimen grating分析栅 analyzer grating面内云纹法 in-plane moire method脆性涂层法 brittle-coating method条带法 strip coating method坐标变换 transformation of Coordinates计算结构力学 computational structural mechanics 加权残量法 weighted residual method有限差分法 finite difference method有限[单]元法 finite element method配点法 point collocation里茨法 Ritz method广义变分原理 generalized variational Principle 最小二乘法 least square method胡[海昌]一鹫津原理 Hu-Washizu principle赫林格-赖斯纳原理 Hellinger-Reissner Principle 修正变分原理 modified variational Principle约束变分原理 constrained variational Principle混合法 mixed method杂交法 hybrid method边界解法 boundary solution method有限条法 finite strip method半解析法 semi-analytical method协调元 conforming element非协调元 non-conforming element混合元 mixed element杂交元 hybrid element边界元 boundary element强迫边界条件 forced boundary condition 自然边界条件 natural boundary condition 离散化 Discretization离散系统 discrete system连续问题 continuous problem广义位移 generalized displacement广义载荷 generalized load广义应变 generalized strain广义应力 generalized stress界面变量 interface variable节点 node, nodal point[单]元 Element角节点 corner node边节点 mid-side node内节点 internal node无节点变量 nodeless variable杆元 bar element桁架杆元 truss element梁元 beam element二维元 two-dimensional element一维元 one-dimensional element三维元 three-dimensional element轴对称元 axisymmetric element板元 plate element壳元 shell element厚板元 thick plate element三角形元 triangular element四边形元 quadrilateral element四面体元 tetrahedral element曲线元 curved element二次元 quadratic element线性元 linear element三次元 cubic element四次元 quartic element等参[数]元 isoparametric element超参数元 super-parametric element亚参数元 sub-parametric element节点数可变元 variable-number-node element拉格朗日元 Lagrange element拉格朗日族 Lagrange family巧凑边点元 serendipity element巧凑边点族 serendipity family无限元 infinite element单元分析 element analysis单元特性 element characteristics刚度矩阵 stiffness matrix几何矩阵 geometric matrix等效节点力 equivalent nodal force节点位移 nodal displacement节点载荷 nodal load位移矢量 displacement vector载荷矢量 load vector质量矩阵 mass matrix集总质量矩阵 lumped mass matrix相容质量矩阵 consistent mass matrix阻尼矩阵 damping matrix瑞利阻尼 Rayleigh damping刚度矩阵的组集 assembly of stiffness Matrices 载荷矢量的组集 consistent mass matrix质量矩阵的组集 assembly of mass matrices单元的组集 assembly of elements局部坐标系 local coordinate system局部坐标 local coordinate面积坐标 area coordinates体积坐标 volume coordinates曲线坐标 curvilinear coordinates静凝聚 static condensation合同变换 contragradient transformation 形状函数 shape function试探函数 trial function检验函数 test function权函数 weight function样条函数 spline function代用函数 substitute function降阶积分 reduced integration零能模式 zero-energy modeP收敛 p-convergenceH收敛 h-convergence掺混插值 blended interpolation等参数映射 isoparametric mapping双线性插值 bilinear interpolation小块检验 patch test非协调模式 incompatible mode节点号 node number单元号 element number带宽 band width带状矩阵 banded matrix变带状矩阵 profile matrix带宽最小化 minimization of band width波前法 frontal method子空间迭代法 subspace iteration method 行列式搜索法 determinant search method 逐步法 step-by-step method纽马克法 Newmark威尔逊法 Wilson拟牛顿法 quasi-Newton method牛顿-拉弗森法 Newton-Raphson method增量法 incremental method初应变 initial strain初应力 initial stress切线刚度矩阵 tangent stiffness matrix割线刚度矩阵 secant stiffness matrix模态叠加法 mode superposition method平衡迭代 equilibrium iteration子结构 Substructure子结构法 substructure technique超单元 super-element网格生成 mesh generation结构分析程序 structural analysis program 前处理 pre-processing后处理 post-processing网格细化 mesh refinement应力光顺 stress smoothing组合结构 composite structure流体力学流体动力学 fluid dynamics连续介质力学 mechanics of continuous media介质 medium流体质点 fluid particle无粘性流体 nonviscous fluid, inviscid fluid连续介质假设 continuous medium hypothesis流体运动学 fluid kinematics水静力学 hydrostatics液体静力学 hydrostatics支配方程 governing equation伯努利方程 Bernoulli equation伯努利定理 Bernonlli theorem毕奥-萨伐尔定律 Biot-Savart law欧拉方程 Euler equation亥姆霍兹定理 Helmholtz theorem开尔文定理 Kelvin theorem涡片 vortex sheet库塔-茹可夫斯基条件 Kutta-Zhoukowski condition布拉休斯解 Blasius solution达朗贝尔佯廖 d'Alembert paradox 雷诺数 Reynolds number施特鲁哈尔数 Strouhal number随体导数 material derivative不可压缩流体 incompressible fluid 质量守恒 conservation of mass动量守恒 conservation of momentum 能量守恒 conservation of energy 动量方程 momentum equation能量方程 energy equation控制体积 control volume液体静压 hydrostatic pressure涡量拟能 enstrophy压差 differential pressure流[动] flow流线 stream line流面 stream surface流管 stream tube迹线 path, path line流场 flow field流态 flow regime流动参量 flow parameter流量 flow rate, flow discharge。
半导体制造的常用名词
半导体制造的常用名词发表于: 2007-5-07 17:10 作者: luhaoxinglhx 来源: 半导体技术天地Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.晶锭- 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.激光散射- 由晶圆片表面缺陷引起的脉冲信号。
Lay - The main direction of surface texture on a wafer.层- 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)光点缺陷(LPD) （不推荐使用，参见“局部光散射”）Lithography - The process used to transfer patterns onto wafers.光刻- 从掩膜到圆片转移的过程。
Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.局部光散射- 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
Lot - Wafers of similar sizes and characteristics placed together in a shipment.批次- 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
半导体生产过程课件
A Solid Seed Crystal is Rotated and Slowly Extracted from a Pool of Molten Si
Requires Careful Control to Give Crystals Desired Purity and Dimensions
Miller Indices is Used to Assign to Each Possible Plane Passing Through thecturing
Photolithography
Photolithography
Photolithography is a technique that is used to define the shape of micromachined structures on a wafer.
Quartz, or Silica, Consists of Silicon Dioxide
Sand Contains Many Tiny Grains of Quartz
Silicon Can be Artificially Produced by Combining Silica and Carbon in Electric Furnice
Constructed by Kilby
Semiconductor Manufacturing Process
Semiconductor Manufacturing Process
Fundamental Processing Steps 1.Silicon Manufacturing
力学名词英语翻译
力学名词英语翻译力学名词英语翻译力学名词英语翻译力学mechanics 牛顿力学newtonian mechanics经典力学classical mechanics静力学statics运动学kinematics动力学dynamics动理学kinetics宏观力学macroscopic mechanics,macromechanics 细观力学mesomechanics微观力学microscopic mechanics,micromechanics 一般力学general mechanics固体力学solid mechanics流体力学fluid mechanics理论力学theoretical mechanics应用力学applied mechanics工程力学engineering mechanics实验力学experimental mechanics计算力学computational mechanics理性力学rational mechanics物理力学physical mechanics地球动力学geodynamics力force作用点point of action作用线line of action力系system of forces力系的简化reduction of force system 等效力系equivalent force system刚体rigid body力的可传性transmissibility of force 平行四边形定则parallelogram rule 力三角形force triangle力多边形force polygon零力系null-force system平衡equilibrium力的平衡equilibrium of forces平衡条件equilibrium condition平衡位置equilibrium position平衡态equilibrium state分析力学analytical mechanics拉格朗日乘子lagrange multiplier拉格朗日[量] lagrangian拉格朗日括号lagrange bracket循环坐标cyclic coordinate循环积分cyclic integral哈密顿[量] hamiltonian哈密顿函数hamiltonian function正则方程canonical equation正则摄动canonical perturbation正则变换canonical transformation正则变量canonical variable哈密顿原理hamilton principle作用量积分action integral哈密顿--雅可比方程hamilton-jacobi equation 作用--角度变量action-angle variables阿佩尔方程appell equation劳斯方程routh equation拉格朗日函数lagrangian function诺特定理noether theorem泊松括号poisson bracket边界积分法boundary integral method并矢dyad运动稳定性stability of motion轨道稳定性orbital stability李雅普诺夫函数lyapunov function渐近稳定性asymptotic stability结构稳定性structural stability久期不稳定性secular instability弗洛凯定理floquet theorem倾覆力矩capsizing moment自由振动free vibration固有振动natural vibration暂态transient state环境振动ambient vibration反共振anti-resonance衰减attenuation库仑阻尼coulomb damping同相分量in-phase component非同相分量out-of-phase component超调量overshoot参量[激励]振动parametric vibration模糊振动fuzzy vibration临界转速critical speed of rotation阻尼器damper半峰宽度half-peak width集总参量系统lumped parameter system相平面法phase plane method相轨迹phase trajectory等倾线法isocline method跳跃现象jump phenomenon负阻尼negative damping达芬方程duffing equation希尔方程hill equationkbm方法kbm method, krylov-bogoliu-bov-mitropol'skii method马蒂厄方程mathieu equation平均法averaging method组合音调combination tone解谐detuning耗散函数dissipative function硬激励hard excitation硬弹簧hard spring, hardening spring谐波平衡法harmonic balance method久期项secular term自激振动self-excited vibration分界线separatrix亚谐波subharmonic软弹簧soft spring ,softening spring软激励soft excitation邓克利公式dunkerley formula瑞利定理rayleigh theorem分布参量系统distributed parameter system优势频率dominant frequency模态分析modal analysis固有模态natural mode of vibration同步synchronization超谐波ultraharmonic范德波尔方程van der pol equation频谱frequency spectrum基频fundamental frequencywkb方法wkb method, wentzel-kramers-brillouin method 缓冲器buffer风激振动aeolian vibration嗡鸣buzz倒谱cepstrum颤动chatter蛇行hunting阻抗匹配impedance matching机械导纳mechanical admittance机械效率mechanical efficiency机械阻抗mechanical impedance随机振动stochastic vibration, random vibration 隔振vibration isolation减振vibration reduction应力过冲stress overshoot喘振surge摆振shimmy起伏运动phugoid motion起伏振荡phugoid oscillation驰振galloping陀螺动力学gyrodynamics陀螺摆gyropendulum陀螺平台gyroplatform陀螺力矩gyroscoopic torque陀螺稳定器gyrostabilizer陀螺体gyrostat惯性导航inertial guidance姿态角attitude angle方位角azimuthal angle舒勒周期schuler period机器人动力学robot dynamics多体系统multibody system多刚体系统multi-rigid-body system机动性maneuverability凯恩方法kane method转子[系统]动力学rotor dynamics转子[一支承一基础]系统rotor-support-foundation system 静平衡static balancing动平衡dynamic balancing静不平衡static unbalance动不平衡dynamic unbalance现场平衡field balancing不平衡unbalance不平衡量unbalance互耦力cross force挠性转子flexible rotor分频进动fractional frequency precession半频进动half frequency precession油膜振荡oil whip转子临界转速rotor critical speed自动定心self-alignment亚临界转速subcritical speed涡动whirl连续过程continuous process碰撞截面collision cross section通用气体常数conventional gas constant 燃烧不稳定性combustion instability稀释度dilution完全离解complete dissociation火焰传播flame propagation组份constituent碰撞反应速率collision reaction rate燃烧理论combustion theory浓度梯度concentration gradient阴极腐蚀cathodic corrosion火焰速度flame speed火焰驻定flame stabilization火焰结构flame structure着火ignition湍流火焰turbulent flame层流火焰laminar flame燃烧带burning zone渗流flow in porous media, seepage达西定律darcy law赫尔-肖流hele-shaw flow毛[细]管流capillary flow过滤filtration爪进fingering不互溶驱替immiscible displacement不互溶流体immiscible fluid互溶驱替miscible displacement互溶流体miscible fluid迁移率mobility流度比mobility ratio渗透率permeability孔隙度porosity多孔介质porous medium比面specific surface迂曲度tortuosity空隙void空隙分数void fraction注水water flooding可湿性wettability地球物理流体动力学geophysical fluid dynamics 物理海洋学physical oceanography大气环流atmospheric circulation海洋环流ocean circulation海洋流ocean current旋转流rotating flow平流advection埃克曼流ekman flow埃克曼边界层ekman boundary layer大气边界层atmospheric boundary layer大气-海洋相互作用atmosphere-ocean interaction 埃克曼数ekman number罗斯贝数rossby unmber罗斯贝波rossby wave斜压性baroclinicity正压性barotropy内磨擦internal friction海洋波ocean wave盐度salinity环境流体力学environmental fluid mechanics斯托克斯流stokes flow羽流plume理查森数richardson number污染源pollutant source污染物扩散pollutant diffusion噪声noise噪声级noise level噪声污染noise pollution排放物effulent工业流体力学industrical fluid mechanics流控技术fluidics轴向流axial flow并向流co-current flow对向流counter current flow横向流cross flow螺旋流spiral flow旋拧流swirling flow滞后流after flow混合层mixing layer抖振buffeting风压wind pressure附壁效应wall attachment effect, coanda effect简约频率reduced frequency爆炸力学mechanics of explosion终点弹道学terminal ballistics动态超高压技术dynamic ultrahigh pressure technique 流体弹塑性体hydro-elastoplastic medium热塑不稳定性thermoplastic instability空中爆炸explosion in air地下爆炸underground explosion水下爆炸underwater explosion电爆炸discharge-induced explosion激光爆炸laser-induced explosion核爆炸nuclear explosion点爆炸point-source explosion殉爆sympathatic detonation强爆炸intense explosion粒子束爆炸explosion by beam radiation 聚爆implosion起爆initiation of explosion爆破blasting霍普金森杆hopkinson bar电炮electric gun电磁炮electromagnetic gun爆炸洞explosion chamber轻气炮light gas gun马赫反射mach reflection基浪base surge成坑cratering能量沉积energy deposition爆心explosion center爆炸当量explosion equivalent火球fire ball爆高height of burst蘑菇云mushroom侵彻penetration规则反射regular reflection崩落spallation应变率史strain rate history流变学rheology聚合物减阻drag reduction by polymers 挤出[物]胀大extrusion swell, die swell无管虹吸tubeless siphon剪胀效应dilatancy effect孔压[误差]效应hole-pressure[error]effect 剪切致稠shear thickening剪切致稀shear thinning触变性thixotropy反触变性anti-thixotropy超塑性superplasticity粘弹塑性材料viscoelasto-plastic material 滞弹性材料anelastic material本构关系constitutive relation麦克斯韦模型maxwell model沃伊特-开尔文模型voigt-kelvin model宾厄姆模型bingham model奥伊洛特模型oldroyd model幂律模型power law model应力松驰stress relaxation应变史strain history应力史stress history记忆函数memory function衰退记忆fading memory应力增长stress growing粘度函数voscosity function相对粘度relative viscosity复态粘度complex viscosity拉伸粘度elongational viscosity拉伸流动elongational flow第一法向应力差first normal-stress difference第二法向应力差second normal-stress difference 德博拉数deborah number魏森贝格数weissenberg number动态模量dynamic modulus振荡剪切流oscillatory shear flow宇宙气体动力学cosmic gas dynamics等离[子]体动力学plasma dynamics电离气体ionized gas行星边界层planetary boundary layer阿尔文波alfven wave泊肃叶-哈特曼流] poiseuille-hartman flow哈特曼数hartman number生物流变学biorheology生物流体biofluid生物屈服点bioyield point生物屈服应力bioyield stress电气体力学electro-gas dynamics铁流体力学ferro-hydrodynamics血液流变学hemorheology, blood rheology血液动力学hemodynamics磁流体力学magneto fluid mechanics磁流体动力学magnetohydrodynamics, mhd磁流体动力波magnetohydrodynamic wave磁流体流magnetohydrodynamic flow磁流体动力稳定性magnetohydrodynamic stability 生物力学biomechanics生物流体力学biological fluid mechanics生物固体力学biological solid mechanics宾厄姆塑性流bingham plastic flow开尔文体kelvin body沃伊特体voigt body可贴变形applicable deformation可贴曲面applicable surface边界润滑boundary lubrication液膜润滑fluid film lubrication向心收缩功concentric work离心收缩功eccentric work关节反作用力joint reaction force微循环力学microcyclic mechanics微纤维microfibril渗透性permeability生理横截面积physiological cross-sectional area 农业生物力学agrobiomechanics纤维度fibrousness硬皮度rustiness胶粘度gumminess粘稠度stickiness嫩度tenderness渗透流osmotic flow易位流translocation flow蒸腾流transpirational flow过滤阻力filtration resistance压扁wafering风雪流snow-driving wind停滞堆积accretion遇阻堆积encroachment沙漠地面desert floor流沙固定fixation of shifting sand 流动阈值fluid threshold力学名词英语翻译相关内容:。
晶圆制造过程英语对比
晶圆制造过程英语对比IntroductionThe manufacturing process of semiconductor wafers or chips, also known as the Integrated Circuit (IC) manufacturing process, is a complex and highly integrated process that involves a series of steps. These steps are designed to transform a silicon wafer into a finished IC, which can be used in various electronic devices. The manufacturing process is divided into several stages, each with its unique set of activities, equipment, and materials. In this article, we will compare the two most commonly used IC manufacturing processes: the 200mm and 300mm wafer fabrication processes.200mm Wafer Fabrication ProcessThe 200mm wafer fabrication process is an older technology that has been in use for several decades. This process involves the use of 200mm diameter silicon wafers, which are typically 0.75mm thick. The following are the major steps involved in the 200mm wafer fabrication process:1. Wafer Preparation: The first step in the process involves cleaning the silicon wafer to remove any contaminants that may be present on the surface. This is done using a combination of chemicals and mechanical scrubbing.2. Photolithography: This step involves the use of a photoresist material, which is applied to the surface of the wafer. The photoresist is then exposed to ultraviolet light, which is used to transfer a pattern onto the wafer surface.3. Etching: The next step involves the use of chemicals to remove the unwanted material from the wafer surface. This is done using a process called etching, which can be either wet or dry.4. Deposition: This step involves the deposition of a thin layer of material onto the wafer surface. This can be done using various techniques, including Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD).5. Doping: This step involves the introduction of impurities into the silicon wafer to alter its electricalproperties. This is done using a process called ion implantation, which involves the use of high-energy ions to introduce impurities into the wafer surface.6. Annealing: The final step in the 200mm wafer fabrication process involves annealing the wafer to remove any damage that may have been caused during the previous steps. This is done by heating the wafer to a high temperature in a controlled environment.300mm Wafer Fabrication ProcessThe 300mm wafer fabrication process is a newer technology that has been in use for the past two decades. This process involves the use of 300mm diameter silicon wafers, which are typically 0.75mm thick. The following are the major steps involved in the 300mm wafer fabrication process:1. Wafer Preparation: The first step in the process involves cleaning the silicon wafer to remove any contaminants that may be present on the surface. This is done using a combination of chemicals and mechanical scrubbing, similar to the 200mm wafer fabrication process.2. Photolithography: The photolithography step issimilar to the 200mm wafer fabrication process, but with some minor differences. The 300mm wafer fabrication process involves the use of larger and more advanced photolithography equipment, which allows for the creation of smaller and more complex patterns on the wafer surface.3. Etching: The etching step is also similar to the200mm wafer fabrication process, but with some minor differences. The 300mm wafer fabrication process involves the use of larger and more advanced etching equipment, which allows for the removal of smaller and more complex features on the wafer surface.4. Deposition: The deposition step is similar to the200mm wafer fabrication process, but with some minor differences. The 300mm wafer fabrication process involves the use of larger and more advanced deposition equipment, which allows for the deposition of thinner and more uniform layers of material onto the wafer surface.5. Doping: The doping step is also similar to the 200mm wafer fabrication process, but with some minor differences. The 300mm wafer fabrication process involves the use oflarger and more advanced ion implantation equipment, which allows for the introduction of smaller and more precise impurities into the wafer surface.6. Annealing: The annealing step is similar to the 200mm wafer fabrication process, but with some minor differences. The 300mm wafer fabrication process involves the use of larger and more advanced annealing equipment, which allows for the annealing of larger and more complex wafers in a shorter amount of time.ComparisonThe 300mm wafer fabrication process is a newer and more advanced technology than the 200mm wafer fabrication process. It offers several advantages over the older technology, including:1. Cost Efficiency: The 300mm wafer fabrication process allows for the production of more chips per wafer than the 200mm wafer fabrication process, resulting in lower costs per chip.2. Higher Yield: The 300mm wafer fabrication process offers higher yields than the 200mm wafer fabricationprocess, thanks to its more advanced equipment and processes.3. More Advanced Technology: The 300mm wafer fabrication process allows for the creation of smaller and more complex patterns on the wafer surface, resulting in more advanced chips with higher performance.ConclusionIn conclusion, both the 200mm and 300mm waferfabrication processes are essential for the production of semiconductor chips. However, the 300mm wafer fabrication process is a newer and more advanced technology that offers several advantages over the older 200mm wafer fabrication process. These advantages include lower costs per chip, higher yields, and more advanced technology. As the demand for higher performance chips continues to grow, it islikely that the 300mm wafer fabrication process will become the standard for IC manufacturing.。
半导体工艺流程英语
半导体工艺流程英语Semiconductor Manufacturing Process.The semiconductor manufacturing process is a highly specialized and intricate series of steps that transform raw materials into the microchips that power modern electronics. This complex process requires precise control over a wide range of variables, including temperature, pressure, and chemical concentrations, to ensure the production of high-quality semiconductors with consistent performance characteristics.The journey begins with the selection of appropriate raw materials. Silicon, the most common material used in semiconductors, is typically obtained from quartz ore. This silicon ore is then purified through a process called smelting, removing impurities to create a highly pure form of silicon known as monocrystalline silicon.Once the raw silicon is obtained, it undergoes a seriesof transformations to create the structure necessary for semiconductor devices. The first step is to slice the silicon into thin wafers, which are then polished to a smooth surface. These wafers are the foundation for all semiconductor devices, serving as the substrate where transistors, diodes, and other components are formed.The next stage involves depositing layers of materials onto the silicon wafers. This deposition process can be done using various techniques, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). These layers, which may include silicon dioxide, silicon nitride, or metals like aluminum or copper, form the electrical components and interconnects that make up the semiconductor device.After deposition, the wafers undergo a series of photolithography steps. Photolithography is a crucial process that involves transferring patterns from a photomask to the wafer using light-sensitive chemicals. This allows for the precise patterning of features such as transistors and capacitors, which are essential for theoperation of the semiconductor.Once the patterns are transferred, the wafers go through etching processes to remove unwanted material, creating the desired structures. Etching can be done using wet chemicals or plasma, depending on the specific requirements of the process.Following etching, the wafers undergo doping, a process that introduces impurities into the silicon lattice toalter its electrical properties. Doping is achieved by exposing the wafers to specific gases at high temperatures, causing the desired atoms to diffuse into the silicon.After doping, the wafers are cleaned and prepared for further processing. This may include additional deposition steps, as well as annealing, a process that involves heating the wafers to remove residual stress and improve the structural integrity of the semiconductor.Throughout the process, quality control is paramount. Strict inspection procedures are employed to ensure thateach step is performed accurately, and the wafers are periodically tested to ensure they meet performance specifications.Once the wafers have completed all the necessary processing steps, they are ready for packaging. Packaging involves attaching the wafers to a carrier substrate, connecting them to external circuitry, and encapsulating them in a protective material to protect them from the environment.The final step is testing. Each semiconductor device is thoroughly tested to ensure it meets performance standards and is ready for use in a wide range of electronic devices, from computers and smartphones to medical equipment and aerospace systems.In summary, the semiconductor manufacturing process is a highly specialized and complex series of steps that require precise control and meticulous attention to detail. From raw materials to finished products, this process involves a range of techniques and technologies that areconstantly evolving to meet the demands of the rapidly advancing electronics industry.。
基于硅微机械加工波导W波段功率合成放大器
第40卷第2期2021年4月红外与毫米波学报J.Infrared Millim.Waves Vol.40，No.2 April，2021基于硅微机械加工波导W波段功率合成放大器成海峰1，2，朱翔2，候芳1，2，胡三明1*，郭健1，石归雄2（1.东南大学毫米波国家重点实验室，江苏南京210096；2.南京电子器件研究所，江苏南京210016）摘要：基于硅微机械加工工艺，设计并制作一款W波段4路硅基波导功分/合成器。
通过在8英寸的硅晶圆上采用干法刻蚀和晶圆级键合等工艺途径实现了硅基波导结构。
根据硅微机械加工工艺的特点，设计了一种基于H面T 型结和3dB耦合桥结构的波导功分/合成器。
该功分/合成器表现出的损耗为0.25dB。
最后，采用该硅基功分/合成器对4只2W的GaN功率单片进行了功率合成，研制了W波段硅基合成功率放大器。
测试结果表明，在92∼96GHz 的频率范围内，输入功率30dBm的条件下，输出功率在7.03W至8.05W之间，典型电源附加效率为15%，平均合成效率为88%。
关键词：W波段；硅微机械加工；功率分配/合成器；固态功率放大器；氮化镓中图分类号：TN73文献标识码：AW-band power combining amplifier based on siliconmicromachined waveguideCHENG Hai-Feng1，2，ZHU Xiang2，HOU Fang1，2，HU San-Ming1*，GUO Jian1，SHI Gui-Xiong2（1.State Key Laboratory of Millimeter Wave，Southeast University，Nanjing210096，China；2.Nanjing Electronic Device Institute，Nanjing210016，China）Abstract：Based on the silicon micromachined technology，a W-band4-way silicon waveguide power splitter/combiner was designed and fabricated in this paper.The silicon waveguide has been realized by dry etching and wafer level bond‐ing on an8inch silicon wafer.According to the characteristics of silicon micromachining，a waveguide power splitter/ combiner based on H-plane T-junction and3dB coupler was designed.This silicon splitter/combiner exhibits extremely low loss.A silicon power combined PA module was developed by using this silicon power splitter/combiner together with four2W GaN MMICs.The output power is between7.03W and8.05W across the frequency range of92to 96GHz with an input power of30dBm，and the typical PAE is15%.The average combining efficiency is88%.Key words：W band，silicon micromachined，power splitter/combiner，solid state power amplifier（SSPA），GaN. PACS：84.30.Le，84.40.-x引言受单片电路工艺及设计的限制，单个单片功率放大器的输出功率有限，因此功率合成是大功率固态功放研制中最常用的技术。
聚多巴胺调控的金属氧硫化物纳米结构湿化学生长及表面图案化
目录摘要 (I)Abstract (III)第1章绪论 (1)1.1纳米金属氧/硫化物的表面生长 (1)1.1.1生长在不同衬底上的纳米金属氧/硫化物的作用 (1)1.1.2生长方法及图案化 (1)1.2氧化锌纳米棒 (5)1.2.1氧化锌的物理化学性质及主要应用 (6)1.2.2生长方法及衬底对其影响 (8)1.2.3图案化氧化锌纳米棒阵列的制备策略 (10)1.3聚多巴胺 (11)1.3.1聚多巴胺的制备 (11)1.3.2聚多巴胺的性质 (11)1.3.3聚多巴胺的应用 (12)1.3.4聚多巴胺和金属离子的相互作用 (13)1.4本论文的研究内容和意义 (13)第2章实验方法 (15)2.1仪器和试剂 (15)2.1.1仪器 (15)2.1.2试剂 (15)2.2多巴胺溶液的配制 (16)2.3氧化锌纳米棒的制备 (16)2.3.1随机取向的氧化锌纳米棒的制备 (16)2.3.2垂直取向的氧化锌纳米棒的制备 (16)2.4主要表征方法 (16)2.4.1扫描电子显微镜 (16)2.4.2 X射线粉末衍射仪 (17)2.4.3拉曼光谱 (17)2.4.4傅立叶变换红外光谱 (17)2.4.5 X射线光电子能谱 (18)2.4.6紫外-可见分子吸收光谱法 (18)第3章聚多巴胺薄膜对氧化锌纳米棒水浴沉积生长的抑制 (19)3.1引言 (19)3.2实验部分 (20)3.2.1不同表面的制备 (20)3.2.2不同表面上氧化锌的生长 (21)3.2.3表征样品的制备 (21)3.3结果与讨论 (22)3.3.1氧化锌纳米棒在Clean glass和Fe@glass上的生长 (22)3.3.2聚多巴胺对PDA@glass上氧化锌纳米棒生长的影响 (23)3.3.3聚多巴胺对Fe-PDA@glass上氧化锌纳米棒生长的影响 (23)3.3.4聚多巴胺对PDA-Fe@glass上氧化锌纳米棒生长的影响 (24)3.3.5聚多巴胺对ZnO seed layer@glass上氧化锌纳米棒生长的影响 (24)3.3.6机理研究 (26)3.4本章小结 (29)第4章基于聚多巴胺的氧化锌纳米棒阵列的图案化生长 (31)4.1引言 (31)4.2实验部分 (31)4.2.1不同表面的图案化 (31)4.2.2不同表面上氧化锌纳米棒阵列的生长 (34)4.3结果与讨论 (34)4.3.1图案化的Fe-PDA@glass上氧化锌纳米棒阵列的生长 (34)4.3.2图案化的PDA-Fe@glass上氧化锌纳米棒阵列的生长 (35)4.3.3图案化的ZnO seed layer@glass上氧化锌纳米棒阵列的生长.. 364.3.4图案化的PDA-Fe@Si上氧化锌纳米棒阵列的生长 (36)4.3.5图案化的PDA-Fe@PET上氧化锌纳米棒阵列的生长 (37)4.4本章小结 (37)第5章聚多巴胺调控其它氧硫化物纳米材料的生长及图案化 (39)5.1引言 (39)5.2实验部分 (39)5.2.1氧化钨前驱体的生长及图案化 (39)5.2.2硫化镉的生长及图案化 (40)5.3结果与讨论 (40)5.3.1聚多巴胺对PET上氧化钨前驱体生长的影响 (40)5.3.2 PET上氧化钨前驱体的图案化 (41)5.3.3聚多巴胺对PET上硫化镉生长的影响 (41)5.3.4 PET上硫化镉的图案化 (42)5.4本章小结 (42)第6章总结与展望 (45)6.1总结 (45)6.2展望 (46)参考文献 (47)致谢 (61)硕士期间科研情况 (63)聚多巴胺调控的金属氧/硫化物纳米结构湿化学生长及表面图案化洁净能源科学专业硕士研究生汪雪辉指导教师胡卫华教授摘要生长在不同衬底上的金属氧/硫化物纳米材料在微电子、光电器件、传感器、能量储存与转化等诸多研究领域有着广泛而重要的应用，而对金属氧/硫化物纳米材料在不同衬底的生长进行调控并实现图案化生长不仅具有基础研究意义，也对金属氧/硫化物在不同领域的实际应用具有重要意义。
半导体生产过程
WAFER MANUFACTURING
The Silicon Crystal is Sliced by Using a Diamond-Tipped Saw into Thin Wafers
EE 4345 - Semiconductor Electronics Design Project
Silicon Manufacturing
Group Members
Young Soon Song Nghia Nguyen Kei Wong Eyad Fanous Hanna Kim Steven Hsu
Constructed by Kilby
Semiconductor Manufacturing Process
Semiconductor Manufacturing Process
Fundamental Processing Steps 1.Silicon Manufacturing
a) Czochralski method. b) Wafer Manufacturing c) Crystal structure
THE CRYSTAL STRUCTURE OF SILICON
A Unit Cell Has 18 Silicons Atoms
Weak Bonding Along Cleavage Planes
Wafer Splits into 4 or 6 Wedge-Shaped Fragments
Photolithography
Photoresist
Negative resists
光伏工艺流程英语
光伏工艺流程英语The Photovoltaic Manufacturing ProcessThe photovoltaic industry has been rapidly growing in recent years driven by the increasing demand for renewable energy sources and the technological advancements in the field. Photovoltaic cells or solar cells are the fundamental building blocks of photovoltaic systems that convert sunlight into electricity through the photovoltaic effect. The manufacturing process of these solar cells is a complex and intricate procedure that involves several stages to ensure the production of high-quality and efficient solar cells.The photovoltaic manufacturing process typically begins with the procurement of the raw materials required for the production of solar cells. The most common raw material used in the manufacturing of solar cells is silicon which is the most abundant element on the Earth's crust. Silicon is typically extracted from quartz or sand and then processed to achieve the desired purity and crystalline structure.The first step in the photovoltaic manufacturing process is the wafer production stage. In this stage the purified silicon is melted and thenslowly cooled to form large silicon ingots or blocks. These ingots are then sliced into thin wafers using specialized cutting equipment. The thickness of these wafers typically ranges from 150 to 300 micrometers and they serve as the foundation for the solar cell.The next stage in the manufacturing process is the cell production stage. In this stage the silicon wafers undergo a series of chemical and physical processes to create the photovoltaic cell. The first step in this stage is the texturing process where the surface of the silicon wafer is treated to create a rough texture. This texture helps to increase the surface area of the wafer and improves the absorption of sunlight.After the texturing process the wafers are then subjected to a doping process where impurities are intentionally introduced into the silicon to create a p-n junction which is the fundamental structure of a photovoltaic cell. This p-n junction is responsible for the generation of an electric current when the cell is exposed to sunlight.Following the doping process the wafers undergo a process called metallization where conductive metal grids are deposited on the surface of the cell. These metal grids serve as the electrodes that collect the generated electric current and transport it to the external circuit.The final step in the cell production stage is the anti-reflective coating process where a thin layer of anti-reflective material is deposited on the surface of the cell. This coating helps to minimize the reflection of sunlight from the surface of the cell and maximizes the amount of light that is absorbed by the cell.After the cell production stage the individual solar cells are then assembled into larger modules or panels. This module assembly process involves the interconnection of multiple solar cells using conductive ribbons and the encapsulation of the cells within a protective layer of glass or polymer. The modules are then tested for their electrical performance and reliability before being packaged and shipped to the end-users.The photovoltaic manufacturing process is a highly specialized and technologically advanced field that requires the integration of various disciplines such as materials science chemistry physics and engineering. The continuous improvements in the manufacturing process have led to the production of more efficient and cost-effective solar cells that have contributed to the widespread adoption of photovoltaic technology as a viable source of renewable energy.The photovoltaic industry is poised for further growth in the coming years driven by the increasing global demand for clean energysolutions and the ongoing research and development efforts to improve the performance and affordability of solar technology. As the world transitions towards a more sustainable future the photovoltaic manufacturing process will play a crucial role in the large-scale deployment of solar energy systems and the realization of a carbon-neutral global economy.。
半导体制造专业英语术语
球栅阵列舞厅式布局，超净间的布局 圆桶型反应室 阻挡层金属势垒电压backing film 背膜baffle vt ・ 困惑，阻碍，为难（挡片）baffle assembly n. 集合，装配，集会，集结，汇 编 （挡片块）丨 基极，基区 batch 批 bay and chase beam blow-up离子束膨胀 beam deceleration 束流减速分类代码号双极双极技术(工艺) bird ' s beak effect 鸟嘴效应blanket deposition 均厚淀积blower增压泵boat 舟BOE 氧化层刻蚀缓冲剂Bon voyage ［法］再见，一路顺风［平安］bonding pads 压点bonding wire 焊线，引线boron(B) 硼boron trichloride(BCL3) 三氯化硼boron trifluoride (B F3)三氟化硼borophosphosilicate glass(BPSG)硼磷硅玻璃borosilicate glass(BSG) 硼硅玻璃bottom antireflective coating(BARC)下减反射涂层boule单晶锭bracket n.墙上凸出的托架，括弧，支架v.括在一起breakthrough step 突破步骤，起始的干法刻蚀步骤brightfield detection 亮场检查brush scrubbing 涮洗bubbler 带鼓泡槽buffered oxide etch(BOE) 氧化层腐蚀缓冲液bulk chemical distribution 批量化学材料配送bulk gases 大批气体bulkhead equipment layout 穿壁式设备布局bumped chip 凸点式芯片buried layer 埋层burn-box 燃烧室(或盒) burn-in 老化CCA 化学放大(胶) cantilever n. 建］悬臂cantilever paddle 悬臂桨cap oxide 掩蔽氧化层capacitance 电容capacitance-voltage test(C-Vtest) 电容-电压测试capacitive coupled plasma 电容偶合等离子体capacitor 电容器carbon tetrafluoride(CF4) 四氟化碳caro ' s acid3 号液carrier 载流子carrier-depletion region 载流子耗尽层carrier gas 携带气体cassette (承)片架cation 阳离子caustic 腐蚀性的cavitation 超声波能CD 关键尺寸CD- SEM 线宽扫描电镜Celsius adj.摄氏的center of focus(COF) 焦点焦平面center slow 中心慢速central processing unit(CPU) 中央处理器ceramic substrate 陶瓷圭寸装CERDIP 陶瓷双列直插封装Channel 沟道channel length 沟道长度channeling 沟道效应charge carrier 载流子chase技术夹层chelating agent 螯合齐ijchemical amplification(CA) 化学放大胶chemical etch mechanism 化学刻蚀机理chemical mechanical planarization(CMP) 化学机械平坦化chemical solution 化学溶液chemical vapor deposition(CVD) 化学气相淀积chip 芯片chip on board(COB)板上芯片chip scale package(CSP)芯片尺寸圭寸装circuit geometries 电路几何尺寸class number 净化级另卩cleanroom 净化间cleanroom protocol 净化间操作规程Clearfield mask 亮场掩膜板Cluster tool 多腔集成设备CMOS 互补金属氧化物半导体CMP 化学机械平坦化Coater/developer track 涂胶/显影轨道Cobalt silicide 钻硅化合物coefficient n. ［数］系数Coefficient of thermal expansion（CTE）热涨系数Coherence probe microscope 相干探测显微镜Coherent light 相干光coil v. 盘绕，卷Cold wall 冷壁Collector 集电极Collimated light 平行光Collimated sputtering 准直溅射Compensate v.偿还，补偿，付报酬Compound semiconductor 化合物半导体Concentration 浓度Condensation 浓缩Conductor 导体constantly adv・不变地，经常地，坚持不懈地Confocal microscope 共聚焦显微镜Conformal step coverage 共型台阶覆盖Contact 接触（孔）Contact alignment 接触式对准（光刻）Contact angle meter 接触角度仪Contamination 沾污、污染conti boat 连柱舟conticaster ［冶］连铸机Continuous spray develop 连续喷雾显影Contour maps 包络图、等位图、等值图Contrast 对比度、反差contribution n.捐献，贡献，投稿Conventional-line photoresist 常规I 线光刻胶Cook' s theory库克理论Copper CVD 铜CVD Copper interconnect 铜互连Cost of ownership(COO) 业主总成本Covalent bond 共价键Critical dimension 关键尺寸Cryogenic aerosol cleaning 冷凝浮质清洗Cryogenic pump(cryopump) 冷凝泵Crystal 晶体Crystal activation 晶体激活Crystal defect 晶体缺陷Crystal growth 晶体生长Crystal lattice 晶格Crystal orientation 晶向CTE 热涨系数Current-driven current amplifier 电流驱动电流放大器CVD 化学气相淀积Cycle time 周期CZ crystal puller CZ 拉单晶设备Czochralski(CZ) method 切克劳斯基法Ddamascene 大马士革工艺darkfiled detection 暗场检测darkfiled mask 暗场掩膜版DC bias 直流偏压decompose v. 分解,(使)腐烂deep UV(DUV) 深紫外光default n.默认(值)，缺省(值),食言，不履行责任，［律］缺席v.疏怠职责，缺席，拖欠，默认defects density 缺陷密度defect 缺陷deglaze 漂氧化层degree of planarity(DP) 平整度dehydration bake 去湿烘培，脱水烘培density 密度deplention mode 耗尽型degree of focus 焦深deposit n.堆积物，沉淀物，存款，押金，保证金，存放物vt ・存放,堆积vi.沉淀deposition 淀积deposited oxide layer 淀积氧化层depth of focus 焦深descum 扫底膜design for test(DFT)可测试设计desorption 解吸附作用develop inspect 显影检查development 显影developer 显影液deviation n.背离device isolation 器件隔离device technology 器件工艺DI water 去离子水Diameter n.直径diameter grinding 磨边diborane ( B2H6 )乙硼烷dichlorosilane(H2SiCL2) 二氯甲硅烷die 芯片die array 芯片阵列die attach 粘片die-by-die alignment 逐个芯片对准dielectric 介质dielectric constant 介电常数die matrix 芯片阵列die separation 分片diffraction 衍射diffraction-limited optics 限制衍射镜片diffusion 扩散diffusion controlled 受控扩散digital/analog数字/模拟digital circuit diluent direct chip attach( DCA) directionality discrete dishing dislocation dissolution ratedissolution rate monitor(DRM) 溶解率监测DNQ-novolak 重氮柰醌一酚醛树脂Donor 施主dopant profile 掺杂刨面) doped虚拟的， region 掺杂区 doping 掺杂 dose monitor剂量检测仪 dose,Q 剂量 downstream reactor 顺流法反应 drain 漏 drive-in推进 dry etch 干法刻蚀 dry mechanical pump干式机械泵 dry oxidation 干法氧化dummy n.哑巴，傀儡，假人，假货 adj. 假的，虚构的 n.［计］哑元 dynamic adj. 动力的，动力学的，动态的 E economies of scale 规模经济 edge bead removal 边缘去胶 edge die 边缘芯片edge exclusion 无效边缘区域 electrically erasable PROM 电可擦除 EPROM electrode 电极 electromigration 电迁徙 electron beam lithography 电子束光刻electron cyclotron resonance 电子共振回旋加速器 electron shower 电子簇射，电子喷淋 electron stopping 电子阻止 electronic wafer map 硅片上电性能分布图 electroplating 电镀 electropolishing 电解拋光electrostatic chuck 静电吸盘 electrostatic discharge(ESD)静电放电 ellipsometry 椭圆偏振仪，椭偏仪emitter 发射极 endpoint detection 终点检测 engineering n.工程(学) electrostatic discharge(EDX)能量弥散谱仪 enhancement mode 增强型 epi 夕卜延epitaxial layer 夕卜延层epoxy underfill 环氧树脂填充不足erasable PROM 可擦除可编程只读存储器erosion腐蚀，浸蚀establish vt・建立，设立，安置，使定居，使人民接受，确定v.建立etch 刻蚀etch bias刻蚀涨缩量etch profile 刻蚀刨面etch rate 刻蚀速率etch residue 刻蚀残渣etch uniformity 刻蚀均匀性etchant 刻蚀剂etchback planarization 返刻平坦化eutectic attach 共晶焊接eutectic temperature 共晶温度evaporation 蒸发even adj.平的，平滑的，偶数的，一致的，平静的，恰好的，平均的，连贯的adv.［加强语气］甚至（・・・也）, 连…都，即使，恰好，正当vt.使平坦，使相等vi. 变平，相等n.偶数，偶校验exceed vt. 超越，胜过vi.超过其他excimer laser 准分之激光exposal n. 曝光,显露exposure 曝光exposure dose 曝光量extraction electrode 吸极extreme UV 极紫外线extrinsic silicon 掺杂硅F Fables无制造厂公司fabrication 制造facilities 设施factor n.因素，要素，因数，代理人fast ramp furnaces 快速升降温炉fault model 失效模式FCC diamond 面心立方金刚石feature size 特征尺寸FEOL 前工序Fick ' s lawsFICK 定律field-effect transistor 场效应晶体管field oxide 场氧化field-by-field alignment 逐场对准field-programmable PROM 现场可编程只读存储器film 膜film stress 膜应力final assembly and packaging 最终装配和圭寸装final test 终测first interlayer dielectric(ILD-1)第一层层间介质fixed oxide charge 固定氧化物电荷flats 定位边flip chip 倒装芯片float zone 区熔法fluorosilicate glass(FSG) 氟化玻璃focal length 焦距focal plane 焦平面focal point 焦点focus聚焦focus ion beam(FIB) 聚焦离子束footprint 占地面积formula n.公式，规则，客套语forward bias 正偏压four-point probe 四探针frenkel defect Frenkel 缺陷front-opening unified pod(FOUP)前开口盒functional test 功能测试furnace flat zone 恒温区G g-line G 线gallium(Ga)镓gallium arsenide(GaAs)砷化镓gap fill间隙填充gas 气体gas cabinet 气柜gas manifold 气瓶集装gas phase nucleation 气相成核gas purge 气体冲洗gas throughput 气体产量gate 栅gate oxide 栅氧化硅gate oxide integrity 栅氧完整性germanium(Ge) 错getter 俘获glass玻璃glazing 光滑表面global alignment 全局对准global planarization 全局平坦化glow discharge 起辉放电gray area 灰区，技术夹层gross defect 层错grove n. 小树林grown oxide layer 热氧化生长氧化层HHalogen 卤素hardbake 坚膜hardware n.五金器具，(电脑的)硬件，(电子仪器的)部件HEPA filter 高效过滤器hermetic sealing 密圭寸heteroepitaxy 异质外延heterogeneous reaction 异质反应hexamethyldisilazane(HMDS)六甲基二硅氨烷high-density plasma(HDPCVD) 高密度等离子体化学气相淀积高温扩散炉 high-density plasma etch 高密度等离子刻蚀 high-pressure oxidation 高压氧化high-temperature diffusion furnace high vacuum 高真空 high vacuum pumps 高真空泵 hillock 小丘(铝)尖刺 homoepitaxy 同质外延 homogeneous reaction 同质反应 horizontal adj.地平线的，水平的 horizontal furnace 臣卜式炉 hot electron 热电子 hot wall 热壁 hydrochloric acid(HCL)盐酸 hydrofluoric acid(HF)氢氟酸 hydrogen(H2)氢气 hydrogen chloride(HCL)氯化氢 hydrogen peroxide(H2O2)双氧水 hydeophilic 亲水性 hydrophobic 憎水性，疏水性 hyperfiltration 超过滤Ii-line I 线IC packaging 集成电路封装IC reliability 集成电路可靠性 Iddq testing 静态漏电流测试 image resolution 图象清晰度 图象分解力implant v.灌输（注入） impurity 杂质 increment n.增力口,增量 initial adj.最初的，词首的，初始的 n.词首大写 字母 in situ measurements 在线测量 index of refraction 折射率 indium 铟 inductively coupled plasma （ICP ）电感耦合等离子体 inert gas惰性气体infrared interference 红外干涉ingot 锭ink mark墨水标识in-line parametric test 在线参数测试input/output（I/O）pin 输入/ 输出管脚institute n. 学会，学院，协会vt.创立，开始，制定，开始（调查）,提起（诉讼） insulator 绝缘体integrate vt.使成整体，使一体化，求…的积分v.结合integrated circuit(IC)集成电路integrated measurement tool 集成电路测量仪interval n.间隔，距离，幕间休息n.时间间隔interconnect 互连interconnect delay 互连连线延迟interface-trapped charge 界面陷阱电荷interferometer 干涉仪interlayer dielectric(ILD) 层间介质interstitial 间隙(原子) intrinsic silicon 本征硅invoke v.调用ion 离子ion analyzer 离子分析仪ion beam milling or ion beam etching(IBE) 离子铣或离子束刻蚀ion implantation 离子注入ion implantation damage 离子注入损伤ion implantation doping 离子注入掺杂ion implanter离子注入机ion projection lithography(IPL) 离子投影机PVD ionization 离子化ionized metal plasma PVD 离子化金属等离子IPA vapor dry 异丙醇气相干燥isolation regions 隔离区isotropic etch profile各向同性刻蚀刨面JJEFT结型场效应管junction(pn) PN 结junction depth 结深junction spiking 结尖刺KKelvin绝对温度killer defect致命缺陷kinetically controlled reaction 功能控制效应L laminar air flow 层状空气流，层流式lapping 拋光latchup闩锁效应lateral diffusion 横向扩散law of reflection 反射定律LDD轻掺杂漏Leadframe 引线框架leakage cuttent 漏电流len透镜lens compaction 透镜收缩light 光light intensity 光强light scattering 光散射lightly doped drain(LDD) 轻掺杂漏linear 线性linear accelerator 线性加速器linear stage 线宽阶段，线性区linewidth 线宽liquid 液体lithography 光刻loaded brush沾污的毛刷loaded effect 负载效应loadlock真空锁local interconnect(LI)局部互连local planarization 局部平坦化local oxidation of silicon(LOCOS)硅局部氧化隔离法logic逻辑lot批low-pressure chemical vapor deposition (LPCVD) 低压化学气相淀积LSI大规模集成电路Mmagnetic CZ( MCZ )磁性切克劳斯基晶体生长法magnetically enhanced RIE(MERIE)磁增强反应离子刻蚀magnetron sputtering 磁控溅射Magnification n. 扩大，放大倍率magnificent adj. 华丽的，高尚的，宏伟的majority carrier 多子make-up loop补偿循环mask掩膜版n.面具，掩饰，石膏面像vt.戴面具,掩饰，使模糊vi.化装，戴面具，掩饰，参加化装舞会mask-programmable gate array 掩膜可编程门阵歹Umass flow controller(MFC) 质量流量计mass spectrometer 质谱仪mass-transport limited reaction 质量传输限制效应mathematical adj.数学的，精确的mean free path(MFP) 平均自由程medium vacuum 中真空adj. megasonic cleaning 超声清洗melt熔融membrane contactor薄膜接触器，隔膜接触器membrane filter薄膜过滤器，隔膜过滤器merchant n. 商人，批发商，贸易商，店主商业的，商人的mercury arc lamp 汞灯MESFET用在砷化镓结型场效应晶体管中的金属栅metal contact 金属接触孔metal impurities 金属杂质metal stack复合金属，金属堆叠metallization 金属化metalorganic CVD金属有机化学气相淀积metrology 度量衡学microchip微芯片microdefect 微缺陷microlithography 微光刻microloading微负载，与刻蚀相关的深宽比micron微米microprocessor n.［计］微处理器microprocessor unit 微处理器microroughness 微粗糙度Miller indices 密勒指数minienvironment 微环境minimum geometry 最小尺寸minority carrier 少子mix and match 混合与匹配mobile ionic contaminants(MIC)可动离子沾污mobile oxide charge 可动氧化层电荷module n.模数，模块,登月舱，指令舱modify vt・更改，修改v.修改molecular beam epitaxy (MBE) 分子束外延molecular flow 分子流monitor wafer(test wafer) 陪片，测试片，样片monocrystal 单晶monolithic device 单片器件Moore's law 摩尔定律MOS 金属氧化物半导体MOSFET 金属氧化物半导体场效应管motor curreant endpoint 电机电流终点检测(法) MSI中规模集成电路Multiplier n.增加者，繁殖者,乘数，增效器，乘法器multichip module(MCM) 多芯片模式multilenel metallization 多重金属化Murphy's model 墨菲模型N nanometer(nm)纳米native oxide 自然氧化层n-channel MOSFET n 沟道MOSFET negatine resist 负性光刻胶negative n.否定，负数，底片adj.否定的，消极的，负的，阴性的vt.否定，拒绝(接受) negatine resist development 负性光刻胶显影neutral beam trap 中性束陷阱next-generation lithography 下一代光刻技术nitric acid(HNO3)硝酸nitrogen(N2)氮气nitrogen trifluoride(NF3) 三氟化氮nitrous oxide (N2O) 一氧化二氮、笑气nMOS n沟道MOS场效应晶体管noncritical layer 非关键层nonvolatile memory 非挥发性存储器normality 归一化notch 定位槽novolak苯酚甲醛聚树脂材料npn npn 型(三极管) n-type silicon n 型硅nuclear stopping 离子终止nucleation 成核现象，晶核形成nuclei coalescence 核合并numericalaperture(NA) 数值孑L径n-well n 阱Oobjective (显微镜的)物镜off-axis illumination(OAI) 偏轴式曝光，离轴式曝光ohmic contact 欧姆接触op amp 运算放大器optical interferometry endpoint 光学干涉法终点检测optical lithography 光学光刻optical microscope(light microscope) 光学显微镜optical proximity correction(OPC)光学临近修正optical pyrometer 光学高温计optics 光学organic compound 有机化合物氧化诱生层积 vi.划桨，戏 out-diffusion 反扩散 outgassing 除气作用 overdrive 过压力 overetch step 过刻蚀 overflow rinser 溢流清洗 overlay accuracy 套准精度 overlay budget 套准偏差 overlay registration 套刻对准 oxidation 氧化 oxidation-induced stacking faults(OISF) 缺陷，氧化诱生堆垛层错 oxide 氧化物、氧化层、氧化膜 oxidezer 氧化齐ij oxide-trapped charge 氧化层陷阱电荷 ozone(O3)臭氧Ppackage 封装管壳 pad conditioning 垫修整 pad oxide 垫氧化膜 paddle 悬臂 n.短桨，划桨，明轮翼 水，涉水 vt ・用桨划，搅，拌parabolic stage 拋物线阶段parallel-plate(planar)reactor 平板反应parallel testing 并行测试 parameter 参数parametric test 参数测试 parasitic 寄生parasitic capacitance 寄生电容 parasiticresistance 寄生电阻 parasitic transistor 寄生电阻器 partial pressure 分压 particledensity 颗粒密度 particle per wafer perpass(PWP)每步每片上的颗粒 数passivation 钝化 passivation layer 钝化层passive components 无源元件pattern sensitivity 图形灵敏性patterned etching 图形刻蚀pattern wafer 带图形硅片patterning 图形转移，图形成型，刻印pc board 印刷电路版完成任务 p-channel MOSFETp 沟道 MOSFET PCM 工艺控制监测 PEB 曝光后烘焙 PECVD 等离子体增强化学气相淀积PEL 允许曝露极限值pellicle 贴膜 pentavalent 五价元素 perform vt ・ 履行,执行，表演，演出 v. performing adj. 表演的，履行的 perimete array 周边阵列式(圭寸装) pH scale pH 值 phase-shift mask(PSM) 相移掩膜技术 phosphine(PH3) 磷化氢 phosphoric acid(H3PO4)磷酸 phosphorus(P)磷 phosphorus oxychloride(POCL3)三氯氧磷 phosphosilicate glass(PSG)磷硅玻璃 photoacid generator(PAG)光酸产生剂 photoacoustics 光声的 photoactive compound(PAC)感光化合物 photography n.摄影，摄影术 光刻photolithography 光刻(技术) photomask 光掩膜 photoresist 光刻胶 photoresist stripping 去胶、光刻胶去除 physical etch mechanism 物理刻蚀机理 physical vapor deposition(PVD)物理气相淀积 pigtail 引出头 pin grid array(PGA) 针栅阵列式(封装)pinhole 针孑 L piranha 3 号液 pitch 间距 planar 平面 planar capacitor 平面电容 planar process 平面工艺 planarization 平坦化 plasma 等离子体 n.［解］血浆，乳浆，［物］等离子体，plasma-induced damage 等离子体诱导损伤plasma potential distribution 等离子体势分布plastic dual in-line package(DIP) 双列直插塑料圭寸装plastic leaded chip carrier(PLCC) 塑料电极芯片载体plastic packaging 塑料圭寸装plug塞，填充vt.堵，塞，插上，插栓n塞子，插头, 插销pMOS(p-channel) p 沟道MOSpn junction diode pn 结型二极管pnp pnp型三极管point defect 点缺陷Poisson's model 泊松模型polarization 极化，偏振polarized light 极化光，偏振光polish拋光polish rate 拋光速率polished wafer edge(edge grind) 倒角polishing loop 磨拋循环polishing pad 拋光(衬)垫polycide 多晶硅化物光刻胶显影post-develop inspection 显影后检查post-exposure bake(PEB) 曝光后烘焙ppb 十亿分之几ppm 百万分之几ppt 万亿分之几preamorphization 预非晶化precursor 先驱物predeposition 预淀积premetaldielectric(PMD) 金属前介质preston equation Preston 方程primary orientation flat 主定位边print bias光刻涨缩量printed circuit boade(PCB) 印刷电路板probe探针probe card 探针卡prober探针台process 工艺process chamber工艺腔，工艺反应室process chemical 工艺化学process control monitor(PCM)工艺控制监测(图形) process latitude工艺水平，工艺能力process recipe 工艺菜单programmable arraylogic(PLA) 可编程阵列逻辑programmable logic device 可编程逻辑器件programmable read-only memory 可编程只读存储器projected range 投影射程prompt n.提示，付款期限vt・提示，鼓动，促使, (给演员)提白adj.敏捷的，迅速的，即时的adv.准时地n. DOS命令：改变DOS系统提示符的风格proportion n.比例，均衡，面积，部分vt.使成比例，使均衡，分摊proportional adj. 比例的，成比例的，相称的，均衡的proportional band 比例区，比例带，比例尺范围proximityaligner 接近式光刻机p-type silicon P 型硅puddle develop搅拌式显影pump speed 抽气速率punchthrough 穿通purge （冲气）清洗purge cycle （冲气抽气）清洗循环PVD物理气相淀积p-well P 阱pyrogenic steam 热流pyrogen 热原（质）pyrolytic 热解pyrophoric 自燃的Qquad flatpack（QFP）方型管壳封装quadrupole mass analyzer （QMA）四极质量分析仪quality measure 质量测量quarz石英quarz tube 石英管quarz wafer boat 石英舟queue time排队时间R radiation damage 辐射损伤radical 激发random access memory(RAM) 随机存储器range射程rapid thremal anneal(RTA) 快速热退火rapid thermal processor(RTP)快速热处理RCA clean RCA 清洗reaction rate limited 反应速率限制reactive ion etch(RIE)反应离子刻蚀reactivity 反应性reactor反应室，反应腔read-only memory(ROM)只读存储器recombination 复合redistribution 再分布reflection spectroscopy 反射光谱仪reflective notching 反射开槽reflow回流refraction 折身寸refractory metal 难融金属regeneration 再生regeneration套准精度relative index of refraction,n removal n. 移动，免职,切除repeat n.重复，反复vt・重做，复述，向他人转述，复制，使再现vi.重复，留有味道representation n. 表示法,表现,陈述,请求，扮演，画像，继承，代表reset v.重新安排residual gas analyzer(RGA)残余气体分析器resist光刻胶resist development 光刻胶显影resistance 电阻resistivity 电阻率resolution 分辨率reticle掩膜版retrograde well 倒掺杂阱reverse bias 反偏reverse osmosis(RO)反向渗透RF射频RF sputtering射频溅射rinse v嗽口，(用清水)刷，冲洗掉，漂净n.清洗嗽洗，漂洗，漂清，冲洗RO反向渗透Roots blower罗茨(机械增压)泵roughing pump 低真空泵，机械泵RTA快速热退火RTP快速热处理Ssatisfy vt.满足，使满意，说服，使相信v.满意，确保Scaling按比例缩小SCALPEL具有角度限制分散投影电子束光刻Scanner扫描仪scanning electron microscope(SEM)扫描电子显微镜scanning projection aligner 扫描投影光刻机schottky diode 肖特基二极管screen oxide layer 掩蔽氧化层scribe line 戈H 片道scribe line monitor(SLM)戈J片线监测scumming 底膜secondary electron 二次电子secondary electron flood 二次电子流secondary ion mass spectrometry(SIMS)二次离子质谱 (法) seed' s model SEE 模型selective etching 选择性刻蚀selective oxidation 选择性氧化selectivity 选择性semiconductor grade silicon 半导体极硅semiconductor 半导体sensitivity 灵敏度shallow trench isolation(STI)浅沟槽隔离sheet resistance,RS 方块电阻sheet resistivity,方块电阻率shot size胶(点)尺寸shrinking 缩小SI units 公制Sidewall spacer 侧墙Silane(siH4)硅烷Silicide硅化合物silicon 硅silicon dioxide(SIO2)二氧化硅silicon nitride(SI3N4)氮化硅silicon on sapphire 蓝宝石伤硅silicon on insulator(SOI)绝缘体上硅silicontetrachloride(SIC4) 碳化硅silicon tetrafluoride(SIF4)四氟化硅silicon tetrachloride(SICL4)四氯化硅single crystal silicon 单晶硅silylation硅烷化(作用)SIMOX 由注入氧隔离，一种SOI材料single crystal 单晶slip滑移slurry磨料SMIF标准机械接口Sodium hydroxide(NaOH)氢氧化钠soft bake 前烘solid固体solvent 溶齐ijSOS蓝宝石上硅Source 源source drain implants 源漏注入spacer n.取间隔的装置，逆电流器spatial coherence 空间相干spatial signature analysis 空间信号分析specialty gase 特种气体species 种类specific gravity 比重specific heat 比热speckle 斑点spectroscipic ellipsometry 椭圆偏振仪spin coating光刻胶旋涂spin dryer 旋转式甩干桶spin-on-dielectric（SOD）旋转介质法spin-on-glass（SOG）旋转玻璃法spray cleaning 喷雾清洗spray rinser喷雾清洗槽spreading resistance probe 扩散电阻探测sputter n・喷溅声，劈啪声，急语，咕哝vi.唾沫飞溅，发劈啪声，急忙地讲vt.喷出，飞溅出，气急败坏地说sputtering 溅射sputter etch溅射刻蚀sputtered aluminum 溅射铝sputtering yield 溅射产额SSI小规模集成电路stacking fault层积缺陷，堆垛层错standard clean 1(SC-1) 1 号清洗液standard clean 2(SC-2) 2 号清洗液standard mechanical interface(SMIF)机械标准接口standing wave 驻波static RAM静态存储器statistical process control ( SPC)统计过程控制step coverage台阶覆盖step height台阶高度step-and-repeat aligner 分步重复光刻机step-and-scan system步进扫描光刻机stepper步进光刻机stepping motor driver步进电机驱动器电路stepper步进光刻机stoichiometry化学计量(配比) staggle投射标准偏差stress应力striation 条纹strip vt・剥，剥去n. 条，带stripping 去胶structure 结构subatmospheric CVD亚大气压化学气相淀积submicron 亚微米sub-quarter micron 亚0・25微米substrate 衬底sublimation 升华substitutional atom 替位原子subtract v (〜from)减去,减subwaverlength lithography 亚波长光刻sulfur hexafluoride(SF6)六氟化硫sulfuric acid (H2SO4 )硫酸surface profiler 表面形貌surface tension 表面张力susceptor 基座Ttarget chamber 靶室target 靶temperature ramp rate 温度斜率temperature 温度TEOS正硅酸乙脂test algorithm 测试算法test coverage 测试覆盖test structure 测试结构test vector测试向量thermal budget 热预算thermal oxide 热氧化thermocompression bonding 热压键合thermocouple 热电偶thermogravimetric analysis (TGA) 热重量分析thermosonic bonding 热超声键合thin film 薄膜thin small outline package(TSOP)薄小型圭寸装川-V compound 三/五族化合物thorough adj.十分的，彻底的Threshold 域值threshold voitage 域值电压threshold voltage adjustment implant 调栅注入，域值调整注入throughput 产量tilt [tilt] v.(使)倾斜，(使)翘起，以言词或文字抨击time of flight SIMS(TOF -SIMS) 飞行时间二次离子质谱titanium silicide 钛硅化合物TLV极限域值top surface imaging 上表面图形topography 形貌torr 托toxic有毒track system(also track) 轨道系统transient enhanced diffusion(TED)瞬时增强扩散transistor 晶体管trench 槽trench capacitor 槽电容trichlorosilane(TCS or SiHCL3)三氯氢硅triode planar reactor三真空管平面反应室triple well 三阱trivalent 三价tungsten(W)钨tungsten stch back 钨反刻tungsten hexafluoride(WF6)六氟化钨tungstenplug钨塞，钨填充turbomolecular pump(turbo pump) 涡轮分子泵twin planes(twinning) 双平面twin-well(twin-tub)双阱UULSI甚大规模集成电路ultralow penetration air(ULPA)超低穿透空气ultrafiltration 超过滤ultrafine particle 超细颗粒ultrahigh purity 超高纯度ultrahigh vacuum 超高真空ultrashallow junction 超浅结ultrashallow junction 超声键合(压焊) ultraviolet 紫外线undercut 钻蚀uniformity 均匀性unit cell元包，晶胞unpatterned etching(spripping)无图形刻蚀(剥离) unpatterned wafer 无图形硅片unplug v.拔去(塞子，插头等),去掉…的障碍物UV紫外线VVacancy 空位vacuum 真空vacuum wand真空吸片棒，真空镊子van der pauw method 范德堡法vapor phase epotaxy(VPE)气相外延vapor pressure 气压vapor prime气相熏增粘剂，气相成底膜vaporization 气化variable n.［数］变数，可变物，变量adj. 可变的，不定的，。
半导体中英对照
倒序浏览|•Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.•受主- 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。
受主原子必须比半导体元素少一价电子•Alignment Precision - Displacement of patterns that occurs during the photolithography process. . u! F. W' }! b# j4 q•套准精度- 在光刻工艺中转移图形的精度。
2 v I; S4 U, T* r' d9 H3 b! c•Anisotropic - A process of etching that has very little or no undercutting , i( N: Z7 u; {3 z •各向异性- 在蚀刻过程中，只做少量或不做侧向凹刻。
: `3 v& P1 s1 }3 z. `; ?•Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc. + {7 c* p' x H3 B0 m; r•沾污区域- 任何在晶圆片表面的外来粒子或物质。