不同形貌氧化锌制备方法
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Permanganate-treated quartz wafers were then thoroughly rinsed in deionised water and sonicated for 10 min.
2 mmol methionine was dissolved in 25 mL of deionised water with stirring 3 mmol Zn(CH3COO)2 was added to obtain a homogeneous solution addition of 1 mmol ammonium carbonate and stirring for 60 min the mixture and activated quartz wafer were transferred into 50-mL Teflon-lined
centrifugation
dried in air at 60 ℃for 4 h. Wu Q, Chen X, Zhang P, et al.Crystal Growth and Design, 2008, 8(8): 3010-3018.
2.2 Amino acid-induced self-assembly
P•art 3
Summary
1.Introduction
Zinc oxide has the strict crystallography of polarity, high melting point ( 1975℃ ), is a kind of wide band gap semiconductor material, the band gap of about 3.3eV at room temperature, the exciton binding energy as high as 60meV and morphology of nano - zinc oxide - rich, diverse surface orientation.
2.3 ZnO nanorod arrays as electron injection layers
ຫໍສະໝຸດ Baidu
Spin coating
repeate 3 times anneal
Synthetic process
zinc acetate dihydrate and 2-aminoethanol dissolved in
2.2 Amino acid-induced self-assembly
L-methionine
first
D-methionine
Kokotov M, Hodes G. Journal of Materials Chemistry, 2009, 19(23): 3847-3854. Duan Y, Han L, Zhang J, et al. 2015, 54(50): 15170-15175.
the substrates were placed in glass vials filled with 20 mL of 0.04-10 mM fresh KMnO4 solution and 50 μL of n-butanol (as a reducing agent for the KMnO4 ) at 85°C for 15-20 min.
autoclaves to react under static conditions at 120 ℃ for 1 hour The quartz wafers coated with HZC were washed with deionised water and
absolute ethanol several times to remove the unreacted reactants and powder and then dried at 80 ℃for 12 h. Finally, CNZFs were obtained by calcination at 550 ℃ in air for 6 h.
anneal reaction
130 nm ZnO seed layer
2.1 Amino Acid-Assisted Synthesis of ZnO
Zn(CH3COO)2 histidinec
NaOH
Mixed solution
dropwise
Zn(CH3COO)2 ·2H2O + histidinec + NaOH
150 ℃ for 10 h
precipitate
Step1：Substrate activation
The quartz wafers
Mn-(hydroxy)-oxide
M. Kokotov, G. Hodes, J. Mater. Chem. 2009, 19, 3847 – 3854
Step2：Synthesis of CNZFs
The quartz wafers were sequentially rinsed with a mixture of acetone and alcohol (V/V=1:1) and deionised water in an ultrasonic bath
The Preparation of Zinc Oxide
Reporter：唐海娣 Teams： 张梦榕、刘晶晶、刘凡凡、鲁健
刘柳、宋雪洋、李京京、胡婷婷 刘欢、李言、靳宗梓、江晨辉
Main Content
Part 1
Introduction
Part 2
Preparation of zinc oxide
2-methoxyethanol. spin coating onto ITO，annealed for 10 min at 300 ℃. This spin-anneal step would be repeated three times. undergo a final 450 ℃ anneal for 1 h.
2 mmol methionine was dissolved in 25 mL of deionised water with stirring 3 mmol Zn(CH3COO)2 was added to obtain a homogeneous solution addition of 1 mmol ammonium carbonate and stirring for 60 min the mixture and activated quartz wafer were transferred into 50-mL Teflon-lined
centrifugation
dried in air at 60 ℃for 4 h. Wu Q, Chen X, Zhang P, et al.Crystal Growth and Design, 2008, 8(8): 3010-3018.
2.2 Amino acid-induced self-assembly
P•art 3
Summary
1.Introduction
Zinc oxide has the strict crystallography of polarity, high melting point ( 1975℃ ), is a kind of wide band gap semiconductor material, the band gap of about 3.3eV at room temperature, the exciton binding energy as high as 60meV and morphology of nano - zinc oxide - rich, diverse surface orientation.
2.3 ZnO nanorod arrays as electron injection layers
ຫໍສະໝຸດ Baidu
Spin coating
repeate 3 times anneal
Synthetic process
zinc acetate dihydrate and 2-aminoethanol dissolved in
2.2 Amino acid-induced self-assembly
L-methionine
first
D-methionine
Kokotov M, Hodes G. Journal of Materials Chemistry, 2009, 19(23): 3847-3854. Duan Y, Han L, Zhang J, et al. 2015, 54(50): 15170-15175.
the substrates were placed in glass vials filled with 20 mL of 0.04-10 mM fresh KMnO4 solution and 50 μL of n-butanol (as a reducing agent for the KMnO4 ) at 85°C for 15-20 min.
autoclaves to react under static conditions at 120 ℃ for 1 hour The quartz wafers coated with HZC were washed with deionised water and
absolute ethanol several times to remove the unreacted reactants and powder and then dried at 80 ℃for 12 h. Finally, CNZFs were obtained by calcination at 550 ℃ in air for 6 h.
anneal reaction
130 nm ZnO seed layer
2.1 Amino Acid-Assisted Synthesis of ZnO
Zn(CH3COO)2 histidinec
NaOH
Mixed solution
dropwise
Zn(CH3COO)2 ·2H2O + histidinec + NaOH
150 ℃ for 10 h
precipitate
Step1：Substrate activation
The quartz wafers
Mn-(hydroxy)-oxide
M. Kokotov, G. Hodes, J. Mater. Chem. 2009, 19, 3847 – 3854
Step2：Synthesis of CNZFs
The quartz wafers were sequentially rinsed with a mixture of acetone and alcohol (V/V=1:1) and deionised water in an ultrasonic bath
The Preparation of Zinc Oxide
Reporter：唐海娣 Teams： 张梦榕、刘晶晶、刘凡凡、鲁健
刘柳、宋雪洋、李京京、胡婷婷 刘欢、李言、靳宗梓、江晨辉
Main Content
Part 1
Introduction
Part 2
Preparation of zinc oxide
2-methoxyethanol. spin coating onto ITO，annealed for 10 min at 300 ℃. This spin-anneal step would be repeated three times. undergo a final 450 ℃ anneal for 1 h.