3D-XPOINT半导体材料与器件课堂介绍

Disadvantage: crosstalk

1D1R Structure
Advantage: Diode rectification depress crosstalk

Disadvantage: Need a high rectification ratio ; Preparation at low temperature; Drive capability; Unidirectional(need unipolar RRAM)
3D-Xpoint
Key Words: Non-Volatile Stackable Selector Memory Cell
Traditional Device Structure

1R 1D1R 1T1R(1TXR)
1R Structure
Advantage: Simple; low-cost; dense

3D-Xpoint technology

1S1R(selector + resistor)
Selector : OTS (Ovonic threshold switch) (usually metal oxide)(RRAM?) Resistor : Memristor (RRAM?PCM?)
Workflow ( If RRAM+PCM )

Address Decode
Apply voltage to Selector (Become low resistance)

Apply current to Memory Cell (Phase changed , Data be written)

Apply voltage to Selector (Become high resistance )

Questions & Challenges
Materials? （detailed information about RRAM and PCM） （fundamental theory） Device structure? （ports ; crossbar ; 3D array） Technology？ （Etching becomes main problem and cost in 3D）
3D-Xpoint Memory
毛奕陶 M201772167
Content

Why we want to research new memory? What is the 3D-Xpoint? Some assumptions about the 3D-Xpoint Memory


Research Motivation

1T1R and 1TXR Structure
Advantage: Good controllability

Leabharlann Baidu
1TXR is a trade-off between controllability and density
Disadvantage: Increase the area and cost; Low-density

Memory Wall

Planar Scaling Limitation
3D-Xpoint
Definition : 3D-Xpoint is a new type of memory chip technology developed by Intel and Micron that uses a non-transistor architecture.

“A first major new memory technology since the invention of flash memory. ”——Intel
3D-Xpoint
Performance: Latency (Speed) Density (Capacity) Endurance (Lifetime)

Conclusion
The 3D-XPoint technology combines the performance, density, power, non-volatility and cost advantages of traditional memory technologies and create a new type of non-volatile memory with significantly reduced latency. This makes it possible to store more data close to the processor and to access more data faster. I believe it’s a truly promising technology.