wafer工艺流程课件
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5.PW_PH 6.PW_IMP
P WELL IMPLANT 1 B300K100E3A63B32R00(Well Form) PWELL IMPLANT 2 B120K350E2T07W23R00(Channel Stop) PWELL IMPLANT 3 B070K150E2T07W23R00(APT IMP) P WELL IMPLANT 4 B030K175E2T07W23R00(VT adjust) 7.PR ASH 8. PR STRIP (SPM+CAPM; NORMAL)
P WELL
P SUB
P SUB
PPT学习交流
5
14.P1 PHOTO 15. POLY ETCH 16.NLDD IMPLANT
NMOS
N WELL
P WELL
P WELL
P SUB
P SUB
PPT学习交流
6
1.PLDD PHOTO 2.PLDD IMPLANT 3. PR STRIP 4.SPACER DEP (NSG; 2000A) 5.ANNEAL (950C;30M) 6.SPACER ETCH 7. SAC3 OXIDE DEP
8.CAP TOP WSI DEP(SPUTTER:2000A) 9.CAP TOP OXIDE DEP (APOX; 1200A 10. CAP PHOTO 11.CAP_ET 12.CAP PR ASH 13. PR STRIP (SPM+HAPM; SILICIDE)
MCAP
N WELL
P WELL
P SUB
PPT学习交流
P SUB
3
1. NW_PH 2. NW_IMP
NWELL IMP 1 P700K150E3A63B32R00 (Well Form) NWELL IMP 2 P260K120E2T07W23R00 (ChannFra Baidu bibliotekl Stop) NWELL IMP3 P150K150E2T07W23R00 (APT IMP) NWELL IMP4 B015K185E2T07W23R00 (VT adjust) 3. PR ASH 4.PR STRIP (SPM+CAPM; NORMAL)
4.AA NITRIDE DEP (760C; 1500A 4000 LOCOS)- Suppress OX lateral diffuse@ LOCOS grown
5.AA PHOTO 6.AA SIN ETCH
LOCOS
7.PR ASH (250C)
8.PR STRIP (SPM+CAPM; NORMAL)
9.FIELD OXIDATION (1100C; 4000A)
10.OXIDE WET ETCH (DHF; 200A)
11.SIN WET ETCH (65MIN)
12.OXIDE WET ETCH (LL130; 2MIN)
13.SAC0_OX (900C; 210A)-protect Si surface from PR contamination and serve as screen OX when N/P well IMP
CZ6H OTP: 1200TEOS+10K UVSION
PPT学习交流
2
1.WAFER START
2.OXIDE WET ETCH (LAL800; 3MIN; S/D) - remove native OX
3.AA_OX TOX (900C; 210A) - PAD OX to buffer Nitride stress
➢ Recess LOCOS(700A) ➢ Polycide ex-situ Poly POCl3 Diffusion1500A+WSI 1750A 12/ ➢ Ti-silicide Process ➢ Metal1(4500Al/100Ti/300TiN), Metal2/3(6200Al/100Ti/300TiN),
N WELL
P WELL
P WELL
P SUB
P SUB
PPT学习交流
4
1.OXIDE WET ETCH (LL130; 90SEC) 2.GATE OXIDATION (850C; 155A) 3.GATE POLY DEP (620C; 1500A; O2 LEAK) 4.PHOSPHORUS DIFFUSION 5.PSG REMOVE (LL130 4MIN+H2O2 4MIN) 6.GATE WSI DEP (SPUTTER:1750A) 7.HTO DEP (400A)
5. PP_PH 6. PP_IMP
P+ IMPLANT 1 B030K200E3T00W23R00 P+ IMPLANT 2 F050K500E5A00B00 7. PR STRIP (SPM; SILICIDE) 8. ANNEAL (850C; 50M)
CZ6 Basic flow introduction
PPT学习交流
1
Process Feature
➢ CZ6H process (1P3M)+option layer (MECAP, R-poly, Code P) 0.45um LV(5V) logic technology
➢ CZ6H OTP (one time program) process (1P3M)+option layer (MECAP, R-poly) 0.45um LV(5V) logic technology
Metal4(9000Al/100Ti/300TiN), TTOPME(30000Al/100Ti/300TiN) ➢ MIP module(0.78fF/um2), HTO 400A ➢ RPOLY (500 ohm/square exsitu-Poly) module, 1K, 2K, 5K developed ➢ Passivation: CZ6H: 1200TEOS+10K SION +Polyimide
N WELL
P WELL
P WELL
P SUB
PPT学习交流
P SUB
7
1. NP_PH 3. NP_IMP
N+ IMPLANT 1 P100K280E3T45W23R12 N+ IMPLANT 2 P040K120E4T00W23R00 N+ IMPLANT 3 A070K200E5A00B00 4. PR STRIP (SPM; SILICIDE)