2SC6082;中文规格书,Datasheet资料

No. A0279-1/7
Applications • High-speed switching applications (switching regulator, driver circuit)
Features
• Adoption of MBIT process
•
Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching
Speci fi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter
Symbol Conditions
Ratings
Unit Collector-to-Base Voltage V CBO
60V Collector-to-Emitter Voltage V CES 60V V CEO 50V Emitter-to-Base Voltage V EBO 6V Collector Current I C 15A Collector Current (Pulse)I CP PW ≤10μs, duty cycle ≤1%
20A Base Current I B 3A Collector Dissipation P C 2
W Tc=25°C
23W Junction Temperature Tj 150
°C Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)7529-002
60612 TKIM/12512 TKIM TC-00002709/72606/31506FA MSIM TB-000020892SC6082
NPN Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching Applications
Product & Package Information
• Package : TO-220F-3SG • JEITA, JEDEC : SC-67• Minimum Packing Quantity : 50 pcs./magazine
Marking
Electrical Connection
C6082
LOT No.
Electrical Characteristics
at Ta=25°C
Parameter
Symbol Conditions
Ratings
Unit min
typ
max
Collector Cutoff Current I CBO V CB =40V , I E =0A 10μA Emitter Cutoff Current I EBO V EB =4V , I C =0A 10μA
DC Current Gain h FE 1V CE =2V , I C =330mA 200560
h FE 2V CE =2V , I C =10A 50
Gain-Bandwidth Product f T V CE =10V , I C
=2A
195MHz Output Capacitance
Cob V CB =10V , f=1MHz 85pF Collector-to-Emitter Saturation Voltage V CE (sat)I C =7.5A, I B =375mA 200
400mV Base-to-Emitter Saturation Voltage V BE (sat)I C =7.5A, I B =375mA 1.2
V Collector-to-Base Breakdown Voltage V (BR)CBO I C =100μA, I E =0A 60V Collector-to-Emitter Breakdown Voltage V (BR)CES I C =100μA, R BE =0Ω60V V (BR)CEO I C =1mA, R BE =∞50V Emitter-to-Base Breakdown Voltage V (BR)EBO I E =100μA, I C =0A 6
V Turn-On Time t on See speci fi ed Test Circuit
52ns Storage Time t stg 560ns Fall Time
t f
37
ns
Switching Time Test Circuit
Ordering Information
Device
Package Shipping
memo
2SC6082-1E
TO-220F-3SG
50pcs./magazine Pb Free
CC I C =20I B1= --20I B2=5A
PW=20μs
D.C.≤1%
Collector-to-Emitter V oltage, V CE -- V
C o l l e c t o r C u r r e n t , I C -- A
Collector-to-Emitter V oltage, V CE -- V
C o l l e c t o r C u r r e n t , I C -- A
IT10574
IT10575
1001000
100.01
0.1
1.0
10
0.01
0.1
1.0
101001000
101001000
101001000
10Collector Current, I C -- A
D C C u r r e n t G a i n , h F E
Collector Current, I C
-- A
D C C u r r e n t G a i n , h F E
Base-to-Emitter V oltage, V BE -- V
C o l l e c t o r C u r r e n t , I C -- A
Collector-to-Base V oltage, V CB -- V
O u t p u t C a p a c i t a n c e , C o b -- p F
Collector Current, I C -- A
C o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- V
G a i n -B a n d w i d t h P r o d u c t , f T -- M H z
Collector Current, I C -- A
IT10576
IT10577
IT10578
IT10581
IT10580
0.10.01IT10579
C o l l e c t o r -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V C E (s a t ) -- V
Collector Current, I C -- A
Collector Current, I C -- A
B a s e -t o -E m i t t e r S a t u r a t i o n V o l t a g e , V B E (s a t ) -- V
IT10582
3
2
1.02
375
IT10583
0.10.01
Collector-to-Emitter V oltage, V CE -- V
C o l l e c t o r C u r r e n t , I C -- A
Ambient Temperature, Ta -- °C
C o l l e c t o r
D i s s i p a t i o n , P C -- W
Case Temperature, Tc -- °C
C o l l e c t o r
D i s s i p a t i o n , P C -- W
IT16711
0.01
0.11.010100IT16709
IT16710
Magazine Specifi cation 2SC6082-1E
Outline Drawing
2SC6082-1E
Mass (g)Unit
1.8
mm
* For reference
This catalog provides information as of June, 2012. Specifi cations and information herein are subject to change without notice.
分销商库存信息: ONSEMI
2SC6082。