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CLIP-SHIELD

CLIP-SHIELD ™Conductive Extrusionwith Mechanical AttachmentLEADER IN EMI SHIELDING INNOVATION, DESIGN, AND TEST TECHNOLOGY33DESCRIPTIONCLIP-SHIELD clip-on gaskets provide secure mechanical attachment of conductive elastomer gaskets for EMI shielding on electronic enclosures. This design replaces pressure sensitive adhesive tapes as a gasket attachment method. CLIP-SHIELD gaskets are ideally suited to small and large enclosure appli-cations requiring both high levels of EMI shielding and resistance to the outdoor environment.Standard CLIP-SHIELD gasketsconsist of a Chomerics CHO-SEAL ®con-ductive elastomer, which is adhesively attached to a flexible PVC/TPE-coated aluminum clip. Several CHO-SEAL con-ductive elastomer materials are available.These include S6305, which provides excellent shielding performance and environmental resistance, and 6370,which also is UL 94V-0 flammability rated.These conductive elastomers can be co-extruded with a non-conductive sili-cone for added environmental protection.FEATURES•55-120 dB shielding effectiveness from 200 MHz to 10 GHz•Excellent resistance to heat, humidity, salt fog corrosion and rain (with silver aluminum or nickel graphite fillers)•Choice of General Duty or UL 94V-0 rated versions •High strength mechanical gasket attachment to the enclosure •Easy manual installation•Available in 90-degree corner splice •2 in. (50.8 mm) min. bend radius for curved surfaces to avoid splicing •Clip sizes (H) from 0.06 in. (1.59 mm) to 0.5 in. (12.7 mm)•Conductive elastomer extrusion widths (w)available to 0.75 in. (19.05 mm)•Reliable, high strength bond between the elastomer gasket and PVC/TPE-coated clipBENEFITS•Economical installation•Single gasket design eliminates sepa-rate EMI and environmental seals •Alternative attachment method to pres-sure sensitive adhesives (PSA)•Global technical application supportOPTIMIZED GASKET SECTION •A wide range of CHO-SEAL conduc-tive materials are available •Custom gasket cross sections can be designed to meet specific applications.Clip widths (W) can be designed to a maximum of 0.75 in. (19.05 mm) •Co-extruded cross sections can be designed for extra environmental protection. CHO-SEAL conductive elastomers are extruded in parallel with a nonconductive silicone •Clip sizes (H) are available to accom-modate panel thicknesses from 0.06 in.(1.59 mm) to 0.50 in. (12.7mm) Typical Part Number 19-24-XXXX(X)-ZZZZ(Z) XXXX(X) Profile ZZZZ(Z) Materialeg. 19-24-16966-S6305All extruded conductive elastomers are available in CLIP-SHIELD. Contact Chomerics Application Department for assistance.Typical CLIP-SHIELD GasketCross Section0.391 in.(9.931 mm)0.563 in.(14.300 mm)0.344 in.(8.737 mm)0.313 in.(7.950 mm)HWChomerics,Div. of Parker Hannifin 77 Dragon CourtWoburn, MA 01888-4014Tel: 781-935-4850FAX:781-933-4318Parker Hannifin PLC Chomerics Europe Parkway, Globe ParkMarlow, Bucks, SL7 1YB, United Kingdom Tel:(44) 1628 404000FAX:(44) 1628 404090NOTICE: The information contained herein is to the best of our knowledge true and accurate. However, since the varied conditions of potential use are beyond our control, all recommendations or suggestions are presented without guarantee or responsibility on our part and users should make their own tests to determine the suitability of our products in any specific situation. This product is sold without warranty either expressed or implied, of fitness for a particular purpose or otherwise, except that this product shall be of standard quality, and except to the extent otherwise stated on Chomerics’ invoice, quotation, or order acknowledgement. We disclaim any and all liability incurred in connection with the use of information contained herein, or otherwise. All risks of such are assumed by the user. Furthermore, nothing contained herein shall be construed as a recommendation to use any process or to manufacture or to use any product in conflict with existing or future patents covering any product or material or its use.©Chomerics, div. of Parker Hannifin Corp., 2000Printed in U.S.A.Parker Hannifin Hong Kong Ltd.Chomerics Sales Department 8/F King Yip Plaza9 Cheung Yee Street, Cheung Sha Wan Kowloon, Hong Kong Tel: (852) 2 428 8008Fax: (852) 2 423 82537M1100ST -249Shown below are the specifications of the two most commonly used materials.CLIP-SHIELD CONDUCTIVE EXTRUSION WITH MECHANICAL ATTACHMENTMin.corner radius 2 in.(50.8 mm)90-degree spliced cornerCONDUCTIVE ELASTOMER SPECIFICATIONSTEST PROCEDURE CHO-SEAL S6305CHO-SEAL 6370Conductive Filler Ni/C Ni/C Elastomer Binder SiliconeSiliconeVolume Resistivity CEPS-0002*0.100.10(ohm-cm, max)Volume Resistivity after Heat Aging, 150°C/48 hrs.CEPS-0002*0.250.25(ohm-cm, max.)Hardness (Shore A, ±10)ASTM D2*******Specific Gravity (±0.25)ASTM D792 2.0 2.1 Tensile Strength psi (Mpa), min.ASTM D624200 (1.38)150 (1.03)Elongation (percent, min.)ASTM D412100100Compression Set, 70 hrs. ASTM D395**40 6.3@ 100°C (percent max.)Method B FlammabilityUL94--V-0 (wall >0.014 in./ 0.356 mm)Low Temperature Flex TR10 ASTM D1329-45-45(°C, min.)Corrosion Resistance CHO-TM-100*3535(weight loss mg)Maximum Continuous Use 150150Temperature (°C)Shielding Effectiveness (dB)100 MHz (E field)100100500 MHz (E field)CHO-TM-TP08*1001002 GHz (Plane Wave)1009510 GHz (Plane Wave)10095* Copies of CEPS-0002, CHO-TM-100 and CHO-TM-TP08 are available from Chomerics.** Compression set is expressed as a percentage of deflection per ASTM D395 Method B, at 25% deflection. T o determine percentrecovery, subtract 1/4 of stated compression set value from 100%. For example, in the case of 30% compression set, recovery is 92.5%.。

三轴加速度计的参数对比

MMA8451模块数字三轴加速度模块高精度倾斜度模块arduino •供电电压：1.95V 至3.6V•接口电压：1.6 V至 3.6 V•±2g/±4g/±8g 动态量程可选•输出数据速率(ODR) 范围： 1.56Hz 至800 Hz•噪声：99μg/√Hz•14 位和8 位数字输出•I2C 数字输出接口（在上拉电阻为4.7 kΩ时，最高频率可达2.25MHz）•适用于7个中断来源的 2 个可编程中断引脚• 3 个运动检测嵌入式通道o自由落体或•MMA7361LC 三轴加速度传感器倾角传感器模块（可替代MMA7260•板载MMA7361(取代MMA7260)低成本微型电容式加速度传感器；••2、支持5V/3.3V电压输入，板载RT9161,比1117更低的压降,更快的负载相应速度，非常适合高噪声电源环境；••3、量程通过单片机IO选择，也可以电阻选择；••4、常用的引脚已经引出，插针为标准100mil（2.54mm），方便用于点阵板；••5、休眠使能可以通过单片机IO控制；••6、PCB尺寸：27.9(mm)x16.8(mm)。

Datasheet_AD82589_Rev 0.02

Description
AD82589 is an integrated audio system solution, embedding digital audio processing power stage amplifier.
AD82589 has a programmable slew-rate controlled output buffer, which drives one (mono) or two (stereo) speakers directly. In addition, it is insusceptible to supply voltage fluctuation due to the close-loop design.
Robust protection circuits are provided to protect AD82589 from damage due to accidental erroneous operation. AD82589, being a digital circuit design, is more tolerant to noise and PVT (Process, Voltage, and Temperature) variation than the analog Class-AB or Class-D audio amplifier counterpart implemented by analog circuit design. Furthermore, AD82589 is pop free during instantaneous power switching because of its built-in, robust anti-pop circuit.

Crystal Structure and the Paraelectric-to-Ferroelectric Phase Transition of Nanoscale BaTiO3

Crystal Structure and the Paraelectric-to-Ferroelectric PhaseTransition of Nanoscale BaTiO3Millicent B.Smith,†Katharine Page,‡Theo Siegrist,§Peter L.Redmond,†Erich C.Walter,†Ram Seshadri,‡Louis E.Brus,†and Michael L.Steigerwald*,†Department of Chemistry,Columbia Uni V ersity,3000Broadway,New York,New York10027,Materials Department and Materials Research Laboratory,Uni V ersity of California,Santa Barbara,California93106,and Bell Laboratories,600Mountain A V enue,Murray Hill,New Jersey07974Received August3,2007;E-mail:mls2064@Abstract:We have investigated the paraelectric-to-ferroelectric phase transition of various sizes ofnanocrystalline barium titanate(BaTiO3)by using temperature-dependent Raman spectroscopy and powderX-ray diffraction(XRD).Synchrotron X-ray scattering has been used to elucidate the room temperaturestructures of particles of different sizes by using both Rietveld reﬁnement and pair distribution function(PDF)analysis.We observe the ferroelectric tetragonal phase even for the smallest particles at26nm.Byusing temperature-dependent Raman spectroscopy and XRD,weﬁnd that the phase transition is diffusein temperature for the smaller particles,in contrast to the sharp transition that is found for the bulk sample.However,the actual transition temperature is almost unchanged.Rietveld and PDF analyses suggestincreased distortions with decreasing particle size,albeit in conjunction with a tendency to a cubic averagestructure.These results suggest that although structural distortions are robust to changes in particle size,what is affected is the coherency of the distortions,which is decreased in the smaller particles.IntroductionBarium titanate(BaTiO3)is a ferroelectric oxide that under-goes a transition from a ferroelectric tetragonal phase to aparaelectric cubic phase upon heating above130°C.In cubicperovskite BaTiO3,the structure of which is displayed in Figure1a,titanium atoms are octahedrally coordinated by six oxygenatoms.Ferroelectricity in tetragonal BaTiO3is due to an averagerelative displacement along the c-axis of titanium from itscentrosymmetric position in the unit cell and consequently thecreation of a permanent electric dipole.The tetragonal unit cellis shown in Figure1b.The elongation of the unit cell along thec-axis and consequently the deviation of the c/a ratio from unityare used as an indication of the presence of the ferroelectricphase.1–3Ferroelectric properties and a high dielectric constant make BaTiO3useful in an array of applications such as multilayer ceramic capacitors,4,5gate dielectrics,6waveguide modulators,7,8IR detectors,9and holographic memory.10The dielectric and ferroelectric properties of BaTiO3are known to correlate with size,and the technological trend toward decreasing dimensions makes it of interest to examine this correlation when sizes are at the nanoscale.11–16†Columbia University.‡University of California.§Bell Laboratories.(1)Jaffe,B.;Cook,W.R.;Jaffe,H.Piezoelectric Ceramics,Vol.3;Academic Press:New York,1971.(2)Lines,M.E.;Glass,A.M.Principles and Applications of Ferroelec-trics and Related Materials;Clarendon Press:Oxford,1977.(3)Strukov,B.A.;Levanyuk,A.P.Ferroelectric Phenomena in Crystals;Springer-Verlag:Berlin,1998.(4)Wang,S.F.;Dayton,G.O.J.Am.Ceram.Soc.1999,82,2677–2682.(5)Hennings,D.;Klee,M.;Waser,R.Ad V.Mater.1991,3,334–340.(6)Yildirim,F.A.;Ucurum,C.;Schliewe,R.R.;Bauhofer,W.;Meixner,R.M.;Goebel,H.;Krautschneider,W.Appl.Phys.Lett.2007,90, 083501/1–083501/3.(7)Tang,P.;Towner,D.J.;Meier,A.L.;Wessels,B.W.IEEE PhotonicTech.Lett.2004,16,1837–1839.(8)Petraru,A.;Schubert,J.;Schmid,M.;Buchal,C.Appl.Phys.Lett.2002,81,1375–1377.(9)Pevtsov,E.P.;Elkin,E.G.;Pospelova,M.A.Proc.SPIE-Int.Soc.Opt.Am.,1997,3200,179-182.(10)Funakoshi,H.;Okamoto,A.;Sato,K.J.Mod.Opt.2005,52,1511–1527.(11)Shaw,T.M.;Trolier-McKinstry,S.;McIntyre,P.C.Annu.Re V.Mater.Sci.2000,30,263–298.(12)Frey,M.H.;Payne,D.A.Phys.Re V.B1996,54,3158–3168.(13)Zhao,Z.;Buscaglia,V.;Vivani,M.;Buscaglia,M.T.;Mitoseriu,L.;Testino,A.;Nygren,M.;Johnsson,M.;Nanni,P.Phys.Re V.B2004, 70,024107.(14)Buscaglia,V.;Buscaglia,M.T.;Vivani,M.;Mitoseriu,L.;Nanni,P.;Terﬁletti,V.;Piaggio,P.;Gregora,I.;Ostapchuk,T.;Pokorny,J.;Petzelt,J.J.Eur.Ceram.Soc.2006,26,2889–2898.Figure1.Unit cell of BaTiO3in both the(a)cubic Pm-3m structure and (b)tetragonal P4mm structure.In the tetragonal unit cell,atoms are displaced in the z-direction,and the cell is elongated along the c-axis.Atom positions: Ba at(0,0,0);Ti at(1/2,1/2,z);O1at(1/2,1/2,z);and O2at(1/2,0,z). Displacements have been exaggerated forclarity.Published on Web05/08/200810.1021/ja0758436CCC:$40.75 2008American Chemical Society J.AM.CHEM.SOC.2008,130,6955–696396955Many experimental and theoretical17–25studies have indicated that the phase-transition temperature of BaTiO3is size-depend-ent,with the ferroelectric phase becoming unstable at room temperature when particle diameter decreases below a critical size.However,both theoretical and experimental reports of this critical size encompass a broad range of sizes.The experimental discrepancies may arise because of intrinsic differences between ferroelectric samples,because the transition is sensitive to conditions such as compositional variation,26lattice defects,12 strain,27or surface charges.20Furthermore,the differences in cell parameters between the two phases are small compared to other sources of broadening in diffraction data,likely leading to an overestimation of the critical size.Recent work by Fong et al.on perovskite(PbTiO3)thinﬁlms indicates that ferroelec-tric behavior persists down to a thickness of only three unit cells,25a value signiﬁcantly less than that suggested by previous experimental studies.Several theoretical studies have been particularly useful in furthering the understanding of the observed behavior of ferroelectrics at small sizes.17However,ferroelectrics are particularly sensitive to surface effects,making modeling increasingly complicated as dimensions are reduced.Many models based on Landau theory18overestimate critical sizes;it has been suggested that this overestimation has resulted from the use of material parameters in the free-energy expression that were derived from the bulk material.19Spanier et al.have found by theoretical modeling that certain surface termination of thin ﬁlms can stabilize polarization down to a thickness of only several unit cells.20Their calculations,which take into account experimentally determined nanoscale material parameters,es-timate the critical size for a BaTiO3sphere to be4.2nm.Other theoretical treatments,such as effective Hamiltonian and ab initio calculations,have predicted the presence of ferroelectricity in perovskiteﬁlms as thin as three unit cells.23,24Various experimental probes of the structure of BaTiO3have revealed a complex and sometimes controversial picture.In the study of bulk material,structural transformations have been explained by averaging domains that are locally rhombo-hedral.28,29For the tetragonal phase,the titanium atoms are distorted in the〈111〉directions and oriented with a net displacement in the c-direction.A number of studies have reported evidence of disorder within BaTiO3above the transition temperature,supporting the existence of distortions within the cubic phase.30–32X-ray diffraction(XRD)studies produce data that are consistent with an increasingly cubic structure at smaller particle sizes,not distinguishing between average and local structure.12,33In contrast,Raman results have supported the existence of tetragonal symmetry at small dimensions,even though it was not discernible by XRD.34The disagreement between Raman and diffraction studies suggests that the phase transition in bulk BaTiO3is complex,with order-disorder as well as displacive character.12,35,36Extended X-ray absorptionﬁne structure(EXAFS)and X-ray absorption near-edge structure(XANES)studies of bulk BaTiO3 have supported a dominant order-disorder component to the structural phase transitions.29In EXAFS and XANES analysis of10,35,and70nm BaTiO3particles,37Frenkel et al.ﬁnd titanium displacements for all samples studied,in contrast to their cubic macroscopic crystal structures from laboratory XRD. Petkov et al.38have recently demonstrated the use of the pair distribution function(PDF)to understand local structure distor-tions and polar behavior in Ba x Sr1-x TiO3(x)1,0.5,0) nanocrystals.They found that locally,reﬁning over theﬁrst15Å,the tetragonal model was the bestﬁt to the experimental PDF;however,over longer distances(15-28Å),the cubic model was the bestﬁt.Their conclusion was that5nm BaTiO3 is on average cubic,but that tetragonal-type distortions in the Ti-O distances are present within the cubic structure.They did not,however,ﬁnd the distortions to be inherent to small particles because they were not present in the perovskite SrTiO3. Several preparation strategies have been reported in recent years for high-quality,well-deﬁned BaTiO3nanocrystalline samples.Hydrothermal or solvothermal methods have been systematically used to make nanocrystalline BaTiO3.39–42O’Brien et al.43and Urban et al.21,44have produced BaTiO3particles and rods,respectively,from the reaction of a bimetallic alkoxide precursor with hydrogen peroxide.Niederberger et al.report a solvothermal preparation of5nm particles of BaTiO3and(15)Hoshina,T.;Kakemoto,H.;Tsurumi,T.;Wada,S.;Yashima,M.J.Appl.Phys.2006,99,054311–054318.(16)Yashima,M.;Hoshina,T.;Ishimura,D.;Kobayashi,S.;Nakamura,W.;Tsurumi,T.;Wada,S.J.Appl.Phys.2005,98,014313. (17)Duan,W.;Liu,Z.-R.Curr.Opin.Solid State Mater.Sci.2006,10,40–51.(18)Wang,C.L.;Smith,S.R.P.J.Phys.:Condens.Matter1995,7163–7171.(19)Akdogan,E.K.;Safari,A.J.Appl.Phys.2007,101,064114.(20)Spanier,J.E.;Kolpak,A.M.;Urban,J.J.;Grinberg,I.;Ouyang,L.;Yun,W.S.;Rappe,A.M.;Park,H.Nano Lett.2006,6,735–739.(21)Urban,J.J.;Spanier,J.E.;Lian,O.Y.;Yun,W.S.;Park,H.Ad V.Mater.2003,15,423–426.(22)Urban,J.J.Synthesis and Characterization of Transition Metal Oxideand Chalcogenide Nanostructures.Ph.D.Dissertation,Harvard Uni-versity,Cambridge,MA,2004.(23)Ghosez,P.;Rabe,K.M.Appl.Phys.Lett.2000,76,2767–2769.(24)Meyer,B.;Vanderbilt,D.Phys.Re V.B2001,63,205426.(25)Fong,D.D.;Stephenson,G.B.;Streiffer,S.K.;Eastman,J.A.;Auciello,O.;Fuoss,P.H.;Thompson,C.Science2004,304,1650–1653.(26)Lee,S.;Liu,Z.-K.;Randall,C.A.J.Appl.Phys.2007,101,054119.(27)Choi,K.J.;Biegalski,M.;Li,Y.L.;Sharan,A.;Schubert,J.;Uecker,R.;Reiche,P.;Chen,Y.B.;Pan,X.Q.;Gopalan,V.;Chen,L.-Q.;Schlom,D.G.;Eom,C.B.Science2004,306,1005–1009. (28)Kwei,G.H.;Lawson,A.C.;Billinge,S.J.L.;Chong,S.-W.J.Phys.Chem.1993,97,2368–2377.(29)Ravel,B.;Stern,E.A.;Vedrinskii,R.I.;Kraizman,V.Ferroelectrics1998,206–207,407–430.(30)Zalar,B.;Laguta Valentin,V.;Blinc,R.Phys.Re V.Lett.2003,90,037601.(31)Lambert,M.;Comes,R.Solid State Commun.1968,6,715–719.(32)Comes,R.;Lambert,M.;Guinier,A.Acta Crystallogr.,Sect.A:Cryst.Phys.,Diffr.,Theor.Gen.Crystallogr.1970,26,244–254.(33)Wada,S.;Tsurumi,T.;Chikamori,H.;Noma,T.;Suzuki,T.J.Cryst.Growth2001,229,433–439.(34)El Marssi,M.;Le Marrec,F.;Lukyanchuk,I.A.;Karkut,M.G.J.Appl.Phys.2003,94,3307–3312.(35)Wada,S.;Suzuki,T.;Osada,M.;Kakihana,M.;Noma,T.Jpn.J.Appl.Phys.1998,37,5385–5393.(36)Noma,T.;Wada,S.;Yano,M.;Suzuki,T.Jpn.J.Appl.Phys.1996,80,5223–5233.(37)Frenkel,A.I.;Frey,M.H.;Payne,D.A.J.Synchrotron Radiat.1999,6,515–517.(38)Petkov,V.;Gateshki,M.;Niederberger,M.;Ren,Y.Chem.Mater.2006,18,814–821.(39)Jung,Y.-J.;Lim,D.-Y.;Nho,J.-S.;Cho,S.-B.;Riman,R.E.;Lee,B.W.J.Cryst.Growth2005,274,638–652.(40)Yosenick,T.;Miller,D.;Kumar,R.;Nelson,J.;Randall,C.;Adair,J.J.Mater.Res.2005,20,837–843.(41)Guangneng,F.;Lixia,H.;Xueguang,H.J.Cryst.Growth2005,279,489–493.(42)Joshi,U.A.;Yoon,S.;Baik,S.;Lee,J.S.J.Phys.Chem.B2006,110,12249–12256.(43)O’Brien,S.;Brus,L.;Murray,C.B.J.Am.Chem.Soc.2001,123,12085–12086.(44)Urban,J.J.;Yun,W.S.;Gu,Q.;Park,H.J.Am.Chem.Soc.2002,124,1186–1187.6956J.AM.CHEM.SOC.9VOL.130,NO.22,2008A R T I C L E S Smith et al.SrTiO3from titanium isopropoxide and metallic barium or strontium in benzyl alcohol.45Here,we describe the use of a bimetallic alkoxide precursor in conjunction with solvothermal techniques to produce high-quality nanoparticles of BaTiO3with controllable sizes.We have studied particles with average sizes of26,45,and70nm by temperature-dependent Raman spectroscopy and XRD and with room temperature Rietveld and atomic PDF analysis of high-energy,high momentum-transfer synchrotron X-ray diffraction data.The sample particles are unstrained,because they are not thin-ﬁlm samples and are compositionally homogeneous with, in particular,no discernible OH impurities that are known to plague many low-temperature solution preparations of ferro-electric oxides.12,33,36The complementary structural methods we employ provide information on different time and length scales.Raman spectra reﬂect the local symmetry around the scattering sites and are averaged over different parts of the sample.The X-ray techniques both allow an average depiction of the structure (through pattern matching and Rietveld analysis)and provide information on the near-neighbor length scale through PDF. The outcomes of the current study are consistent between the different techniques and are somewhat surprising.Raman spectroscopy indicates that the small particles undergo a more diffuse phase transition than in the bulk,although the T C remains nearly unchanged.Careful temperature-dependent XRD studies show that all sizes of particles are tetragonal until close to the bulk T C,and yet the smaller particles seem more cubic by using the c/a ratio as the metric.Average(Rietveld)and local(PDF) structure analyses of X-ray synchrotron data show that as the particle size is reduced,there is a clear and surprising trend toward increasing structural distortion.The increase in the off-centering of the titanium cation as particle size decreases in conjunction with the decrease in the c/a ratios is consistent with diminished structural coherence in smaller particles. Experimental SectionPreparation of BaTiO3Nanoparticles.Anhydrous benzene, isopropanol,dendritic barium(99.99%),and titanium isopropoxide (99.999%)were obtained from Aldrich Chemical Co.and used as received.Sintered pieces of BaTiO3were also purchased from Aldrich for use as a bulk standard.The bimetallic precursor BaTi[OC3H7]6was prepared according to Urban et al.44Parr acid digestion bombs with23mL Teﬂon liners were used for the solvothermal reaction.In a typical synthesis,10mmol(5.4g)of the precursor,BaTi[OC3H7]6,was added to the Teﬂon liner of a digestion bomb under an inert atmosphere.A total of10mL of solvent was added to the precursor underﬂowing argon according to the water and isopropanol ratios in Table1.In none of the solvents used did the precursor dissolve,but rather it formed a thick white suspension.The Teﬂon liner was tightly sealed inside the acid digestion bomb,and the mixture was heated in an oven at 220°C for18h.The resulting white precipitate was collected by centrifugation,washed with ethanol,and allowed to dry underambient conditions.A white powder suitable for powder XRD andRaman measurements was produced with a typical yield of1.93g.Transmission electron microscope(TEM)images were taken on aJEOL100CX instrument by using an accelerating voltage of100kV.Raman Spectroscopy.Raman spectroscopy was performed in air by using a backscattering micro-Raman spectrometer withhelium-neon laser(633nm)excitation.A home-built thermoelec-tric heating stage was used for temperature-dependent measure-ments.Spectra were taken at temperatures ranging from roomtemperature to above150°C.The300cm-1peak35wasﬁt to aLorentzian line shape on a sloping baseline,and from thisﬁt,thescaled peak area and linewidth were determined.Differential Scanning Calorimetry.Differential scanning cal-orimetry(DSC)was performed on a Perkin-Elmer Pyris1DSC.For each scan,3-4mg of sample was used.The heating proﬁleconsisted of two cycles of heating from0to150°C at a rate of10°C/min and then cooling from150to0°C at that same rate. Thermodiffraction.X-ray diffraction data were obtained by using a Rigaku rotating anode together with a custom-built four-circle diffractometer.Graphite monochromated Cu K radiation(1.39217Å),together with a matched graphite analyzer,was usedin Bragg-Brentano geometry.In this way,a well-deﬁned powderdiffraction proﬁle was obtained for all reﬂections,allowing adetailed analysis of the proﬁle changes associated with theparaelectric-to-ferroelectric phase transition.The intensities werenormalized to the incident beam to eliminate drift over the dataacquisition time.A home-built heating stage was used to reachtemperatures up to150°C.X-ray patterns above143°C werecollected to obtain a cubic reference for the expected increase inthe peak widths with2θ.Full pattern reﬁnements were executedin the program Winprep46by using the proﬁle parameters obtainedfrom the cubic phase above143°C.Synchrotron X-ray Diffraction.Synchrotron powder diffrac-tion data were collected in transmission mode at beamline11-ID-B of the Advanced Photon Source,Argonne National Laboratory,by utilizing high-energy X-rays(∼90kV)at room temperature.The use of high-energy X-rays enables measure-ments at longer wavevectors,Q)4πsin(θ/λ),which is important for the application of the PDF technique.Samples were loaded in Kapton tubes,and scattering data were collected on an image plate system(amorphous silicon detector from General Electric Healthcare)with sample-to-detector distances of660 mm for Rietveld reﬁnement data and150mm for PDF data. The raw data sets were processed to one-dimensional X-ray diffraction data by using the program FIT2D.47A bulk internal standard was used to calibrate the processed data,to supply an effective wavelength ofλ)0.13648Åfor reﬁnements.Rietveld reﬁnement of the synchrotron data was carried out in the XND program.48Lattice parameters,atomic positions,and atomic displacement parameters were reﬁned.The PDF,G(r))4πr[F(r)-F],was extracted from the processed scattering data asdescribed by Chupas et al.49with a maximum momentum transferof Q)24Å-1by using the program PDFGETX2.50In thisequation,F(r)is the local atomic number density,F0is theaverage atomic number density,and r is the radial distance.Fullstructure proﬁle reﬁnements were carried out in the programsPDFﬁt2and PDFgui.51The scale factor,lattice parameters,(45)Niederberger,M.;Garnweitner,G.;Pinna,N.;Antonietti,M.J.Am.Chem.Soc.2004,126,9120–9126.(46)Stahl,K.Winprep;Lyngby,Denmark.(47)Hammersley,A.P.;Svensson,S.O.;Hanﬂand,M.;Fitch,A.N.;Hausermann,D.High Pressure Res.1996,14,235–248.(48)Bèrar,J.F.;Garnier,P.NIST Spec.Publ.1992,846,212.(49)Chupas,P.J.;Qui,X.;Hanson,J.C.;Lee,P.L.;Grey,C.P.;Billinge,S.J.L.J.Appl.Crystallogr.2003,36,1342–1347.(50)Qiu,Y.;Wu,C.Q.;Nasu,K.Phys.Re V.B2005,72,224105-1–224105-7.(51)Farrow,C.L.;Thompson,J.W.;Billinge,S.J.L.J.Appl.Crystallogr.2004,37,678.Table1.Particle Size Dependence on Solvent Compositionwater:isopropanol(v:v)particle size(nm)1:070(1040:6060(1030:7045(920:8026(50:1∼10J.AM.CHEM.SOC.9VOL.130,NO.22,20086957 Paraelectric-to-Ferroelectric Phase Transition of Nanoscale BaTiO3A R T I C L E Satomic displacement parameters,and atomic positions as well as broadening from the sample and the instrument resolution were reﬁned.Results and DiscussionPreparation of BaTiO 3Nanoparticles.We explored the effectsof reaction conditions such as temperature,precursor concentra-tion,solvent composition,and addition of surfactants in the preparation of BaTiO 3nanoparticles.We found that the composition of the solvent played a critical role in determining the size of the particles,pure water producing the largest sizes and pure isopropanol producing the smallest.A TEM was used to determine the particle size and morphology,and typical images are shown in Figure 2,with histograms of the particle-size distributions displayed as insets.The particles were nearly spherical in shape with average sizes of 70,45,and 26nm.Table 1gives the average particle size obtained with each solvent mixture as determined by TEM;the given error is plusor minus one standard deviation.Scherrer analysis 52of the laboratory XRD (111)peak at room temperature gave X-ray coherence lengths (grain sizes)of 33,29,and 21nm for the 70,45and 26nm particles,respectively.The instrumental line width limits the determination of particle size to a maximum of 35nm,preventing any conclusions about the single crystal-linity (grain size)of the 70nm particles.However,for the two smaller sizes,the individual particles are likely single crystals.The ﬁnal size of the particles is determined by the balance between particle nucleation and growth.In order to form BaTiO 3from the alkoxide precursor,M -O -M bonds must be formed from M -OR species (M )Ti,Ba;R )-OC 3H 7).In the mixed solvent system,it is likely that several mechanisms are in competition with one another,determining the reaction pathway.In pure water,the pH of the solvent -precursor solution was 13,suggesting the partial hydrolysis of the precursor to Ba(OH)2.This M -OH species can react with a second M -OH or with an M -OR to form the M -O -M bonds and water or isopro-panol,respectively.M -O -M bonds might also form through a -hydride elimination and the reaction of the metal hydride with an M -OR.An additional effect of the solvent composition is that the isopropyl group is a better capping group than the hydroxide because -OC 3H 7is less reactive than -OH.Isopro-poxy moieties on the surface of a particle passivate the surface,inhibiting particle growth and leading to smaller particle sizes.Raman Spectroscopy.Tetragonal BaTiO 3has 10Raman-active modes.When splitting of transverse and longitudinal optical modes,as well as splitting due to differing polarizability in each unit cell direction is considered,18Raman-active phonons result.53Symmetry demands that cubic BaTiO 3should be completely Raman-inactive.However,broad peaks centered at 260and 530cm -1are still observed above the cubic-to-tetragonal phase-transition temperature.34The Raman activity of the cubic phase has been generally attributed in the literature to disorder of titanium in the nominally cubic phase.53Figure 3shows the Raman spectrum of (a)bulk,(b)70nm,(c)45nm,and (d)26nm BaTiO 3over a range of temperatures between 25and 150°C.The assignments given to the Raman modes at the top of Figure 3are those reported in the literature.34Below 200cm -1,we ﬁnd some weak scattering in the nanoparticle samples due to a BaCO 3impurity.As seen by others,the BaTiO 3Raman spectra have the broad features characteristic of titanium disorder in the unit cell at all temperatures and at all sizes.In the bulk BaTiO 3spectra in Figure 3a,the intensities of the E (LO +TO),B 1peaks at ∼300cm -1and E (LO),A 1(LO)peaks at ∼715cm -1decrease rapidly as the temperature increases through the bulk T C ,an observation consistent with prior reports.35We interpret the disappearance of the 300cm -1peak as an indicator of the tetragonal phase and use two characteristics as an indication of the phase transition.The ﬁrst is an increase in peak width at the phase-transition temperature similar to that reported by Hoshina et al.,15and the second is the loss of peak intensity with increasing temperature.These values are given in Figure 4a -d.For all samples,the linewidth for the E (LO +TO),B 1peak increases both with increasing temperature and with decreasing particle size.The much larger linewidths of the Raman peaks of the nanoparticles suggest that the tetragonality present is accompanied by a signiﬁcantly decreased structural coherence.(52)Cullity,B.D.;Stock,S.R.Elements of X-ray Diffraction ,3rd ed.;Prentice Hall:Upper Saddle River,NJ,2001.(53)DiDomenico,M.;Wemple,S.H.;Porto,S.P.S.Phys.Re V .1968,174,522–530.Figure 2.TEM images of BaTiO 3nanoparticles.Histograms of individualparticle sizes,shown as insets,correspond to (a)70(10nm,(b)45(9nm,and (c)26(5nm.The 200nm scale bar is common to all three micrographs.6958J.AM.CHEM.SOC.9VOL.130,NO.22,2008A R T I C L E S Smith et al.It is interesting to note that bulk BaTiO 3near the cubic-to-tetragonal phase transition displays a Raman linewidth that is similar to the line width displayed by the 26nm particles at all temperatures.The linewidth analysis is complemented by the analysis of scaled peak area.Figure 4shows that near the expected phase-transition temperature of 130°C,there is a sharp drop in the Raman intensity of the 300cm -1peak for the bulk sample but a more gradual decrease in intensity over the entire temperature range for the 70and 45nm particles.In contrast,the peak area of the 26nm particles in Figure 4d is nearly constant over the entire temperature range.These results indicate a phase transition that becomes increasingly diffuse in temperature as the particle size decreases.The lack of a sharply deﬁned phase transition in nanosized samples is also observed by using DSC.For bulk BaTiO 3,the DSC trace exhibits a peak near 130°C,indicative of the phase transition.Similar features are not observed in the DSC of nanoparticle samples.Together with the Raman results,these ﬁndings support the idea that the phase transition is distributed over a wide range of temperatures in the nanoparticles,although it is sharply deﬁned in the bulk material.Thermodiffraction.The splitting of the X-ray diffraction peaks is well deﬁned in terms of symmetry,allowing analysis of systematic changes for different (hkl )indices.Figure 5shows diffraction data for 70nm BaTiO 3at room temperature and at 148°C over a small 2θrange.In the high-symmetry cubic phase,no reﬂections are split.In the tetragonal phase,(222)remains a single peak whereas the (400)reﬂection is divided into (400/040)and (004)peaks with an intensity ratio of 2:1.Because the c /a ratio is larger than 1,the (004)reﬂection shifts to a lower 2θvalue,and the (400/040)reﬂection correspondingly shifts to a higher 2θvalue.In spite of changes in symmetry,the cubic-to-tetragonal phase transition is usually not well resolved in diffraction studies of nanosized BaTiO 3because of inherent line broadening due to small particle size.In our study,the phase evolution of BaTiO 3particles was determined by pattern matching to the laboratory X-raydif-Figure 3.Raman spectra at different temperatures for (a)bulk BaTiO 3,(b)70nm particles,(c)45nm particles,and (d)26nm particles.Temperatures increase from top to bottom in each panel.Temperatures are speciﬁed to be within a range of up to (3°C.The locations of Raman modes are indicated at the top of the ﬁgure.The features below 200cm -1are due to a trace BaCO 3impurity,and these are not found in the bulksample.Figure 4.Results from ﬁts to the Raman data.Filled circles show variationof the linewidth of the 300cm -1Raman signal as a function of temperature.Open squares are intensities of the 300cm -1Raman signal normalized to the intensity at 280cm -1.Displayed for (a)bulk powder,(b)70nm particles,(c)45nm particles,and (d)26nmparticles.Figure 5.70nm BaTiO 3particle laboratory XRD data shown over a small 2θrange.(a)Recorded at room temperature.(b)Recorded at 148°C.Reﬂections have been labeled for the cubic phase in panel b.The (222)peak does not split in the tetragonal phase,and consequently,the peak width is constant with temperature.Peaks which are degenerate in the cubic phase but not in the tetragonal phase,for example cubic (400),widen and lose intensity upon cooling.J.AM.CHEM.SOC.9VOL.130,NO.22,20086959Paraelectric-to-Ferroelectric Phase Transition of Nanoscale BaTiO 3A R T I C L E S。

美国药典色谱柱型号对照

美国药典色谱柱型号对照下面是USP规定的编号所对应的色谱柱类型。

L1：十八烷基键合多孔硅胶或无机氧化物微粒固定相，简称ODS柱L2：30～50mm表面多孔薄壳型键合十八烷基固定相，简称C18柱L3：多孔硅胶微粒，即一般的硅胶柱L4：30～50mm表面多孔薄壳型硅胶柱L5：30～50mm表面多孔薄壳型氧化铝柱L6：30～50mm实心微球表面包覆磺化碳氟聚合物，强阳离子交换柱L7：全多孔硅胶微粒键合C8官能团固定相，简称C8柱L8：全多孔硅胶微粒键合非交联NH2固定相，简称NH2柱L9：强酸性阳离子交换基团键合全多孔不规则形硅胶固定相，即SCX柱L10：多孔硅胶微球键合氰基固定相（CN），简称CN柱L11：键合苯基多孔硅胶微球固定相，简称苯基柱L12：无孔微球键合季胺功能团的强阴离子交换柱L13：三乙基硅烷化学键合全多孔硅胶微球固定相（C1），简称C1柱L14：10mm硅胶化学键合强碱性季铵盐阴离子交换固定相，简称SAX柱L15：已基硅烷化学键合全多孔硅胶微球固定相，简称C6柱L16：二甲基硅烷化学键合全多孔硅胶微粒固定相C2柱L17：氢型磺化交联苯乙烯-二乙烯基苯共聚物,强阳离子交换柱L18：3～10mm全多孔硅胶化学键合胺基（NH2）和氰基（CN）柱L19：钙型磺化交联苯乙烯－二乙烯基苯共聚物，强阳离子交换柱L20：二羟基丙烷基化学键合多孔硅胶微球固定相（Diol），简称二醇基柱L21：刚性苯乙烯－二乙烯基苯共聚物微球填料柱L22：带有磺酸基团的多孔苯乙烯阳离子交换柱L23：带有季胺基团的聚甲基丙烯酸甲酯或聚丙烯酸酯多孔离子交换柱L24：表面含有大量羟基的半刚性聚乙烯醇亲水凝胶柱L25：聚甲基丙烯酸酯树脂交联羟基醚（表面含有残余羧基功能团）树脂。

能分离分子量100～5000MW 范围的水溶性中性、阳离子型及阴离子型聚合物（用聚氧乙烯测定）的固定相L26：丁基硅烷化学键合全多孔硅胶微球固定相，即C4柱L27：30～50mm的全多孔硅胶微粒L28：多功能载体，100Å的高纯硅胶加以氨基键合以及C8反相键合的官能团L29:氧化铝,反相键合,含碳量低,氧化铝基聚丁二稀小球,5mm，孔径80ÅL30:全多孔硅胶键合乙基硅烷固定相L31:季胺基改性孔径2000Å的交联苯乙烯和二乙烯基苯(55%)强阴离子交换树脂L32: L-脯氨酸铜配合物共价键合于不规则形硅胶微粒的配位体的交换手性色谱填料L33:能够分离分子量4000～40000MW范围蛋白质分子的球形硅胶固定相, pH稳定性好L34：铅型磺化交联苯乙烯－二乙烯基苯共聚物强阳离子交换树脂，9mm球形L35：锆稳定的硅胶微球键合二醇基亲水分子单层固定相，孔径150ÅL36:5mm胺丙基硅胶键合L-苯基氨基乙酸－3,5二硝基苯甲酰L37：适合分离分子量2000～40000MW的聚甲基丙烯酸酯凝胶L38：水溶性甲基丙烯酸酯基质SEC色谱柱L39：亲水全多孔聚羟基甲基丙烯酸酯色谱柱L40：Tris 3,5－二甲基苯基氨基甲酸酯纤维素涂覆多孔硅胶微球L41：球形硅胶表面固定α1酸糖蛋白固定相L42: C8和C18硅烷化学键合多孔硅胶固定相L43:硅胶微球键合五氟代苯基固定相L44:多功能固定相,60 Å高纯硅胶基质键合磺酸阳离子交换功能团和C8反相功能团L45: β-环糊精键合多孔硅胶微球L46:季胺基改性苯乙烯-二乙烯基苯聚合物微球L1 Octadecyl silane chemically bonded to porous silica or ceramic.L1 十八烷基键合硅烷化学键合于多孔硅胶或陶瓷微粒，3-10u。

CommScope 617-894和1695-2690MHz多频段65° HPBW 12端口扇形抗干

12-port sector antenna, 4x 617-894 and 8x 1695–2690 MHz, 65°HPBW,6x RETGeneral SpecificationsAntenna Type SectorBand MultibandColor Light Gray (RAL 7035)Grounding Type RF connector inner conductor and body grounded to reflector and mountingbracketPerformance Note Outdoor usageRF Connector Interface 4.3-10 FemaleRF Connector Location BottomRF Connector Quantity, mid band8RF Connector Quantity, low band4RF Connector Quantity, total12Remote Electrical Tilt (RET) InformationRET Hardware CommRET v2RET Interface8-pin DIN Female | 8-pin DIN MaleRET Interface, quantity 1 female | 1 maleInput Voltage10–30 VdcInternal RET Low band (2) | Mid band (4)Power Consumption, active state, maximum8 WPower Consumption, idle state, maximum 1 WProtocol3GPP/AISG 2.0 (Single RET)DimensionsWidth498 mm | 19.606 inDepth197 mm | 7.756 inLength2438 mm | 95.984 inNet Weight, antenna only40 kg | 88.185 lb16Page ofArray LayoutPort ConfigurationPage of26Page of 36Logo ImageElectrical Specifications50 ohmImpedance50 ohmOperating Frequency Band1695 – 2690 MHz | 617 – 894 MHzPolarization±45°Total Input Power, maximum1,400 W @ 50 °CElectrical SpecificationsR1,R2R1,R2Y1,Y2,Y3,Y4Y1,Y2,Y3,Y4Y1,Y2,Y3,Y4Y1,Y2,Y3,Y4Y1,Y2,Y3,Y4 Frequency Band, MHz617–698698–8941695–18801850–19901920–22002300–25002500–2690RF Port1,2,3,41,2,3,45,6,7,8,9,10,11,125,6,7,8,9,10,11,125,6,7,8,9,10,11,125,6,7,8,9,10,11,125,6,7,8,9,10,11,12 Gain, dBi1515.717.217.818.118.518.6Gain at Mid Tilt, dBi14.715.516.717.417.818.318.166566566645959 Beamwidth,Horizontal, degrees10.38.7 5.6 5.35 4.5 4.2 Beamwidth, Vertical,degreesBeam Tilt, degrees2–132–132–122–122–122–122–12USLS (First Lobe), dB18161922222221Front-to-Back Ratio at29313433333027180°, dB20222629272422Front-to-Back TotalPower at 180° ± 30°, dB25252525252525Isolation, CrossPolarization, dB25252525252525Isolation, Inter-band,dBVSWR | Return loss, dB 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0 1.5 | 14.0PIM, 3rd Order, 2 x 20-150-150-150-150-150-150-150W, dBc250250200200200200200Input Power per Portat 50°C, maximum,wattsElectrical Specifications, BASTAFrequency Band, MHz617–698698–8941695–18801850–19901920–22002300–25002500–269014.515.216.617.317.718.118Gain by all Beam Tilts,average, dBiGain by all Beam Tilts±0.8±0.5±0.7±0.5±0.5±0.6±0.5 Tolerance, dBBeamwidth, Horizontal ±4±5±5±4±4±8±746Page ofTolerance, degreesBeamwidth, VerticalTolerance, degrees±0.7±1±0.3±0.2±0.3±0.3±0.3USLS, beampeak to20° above beampeak,dB17151617171716CPR at Boresight, dB20181919181413 CPR at Sector, dB10887755 Mechanical SpecificationsWind Loading @ Velocity, frontal829.0 N @ 150 km/h (186.4 lbf @ 150 km/h)Wind Loading @ Velocity, lateral217.0 N @ 150 km/h (48.8 lbf @ 150 km/h)Wind Loading @ Velocity, maximum1,102.0 N @ 150 km/h (247.7 lbf @ 150 km/h)Wind Loading @ Velocity, rear570.0 N @ 150 km/h (128.1 lbf @ 150 km/h)Wind Speed, maximum241 km/h (150 mph)Packaging and WeightsWidth, packed565 mm | 22.244 inDepth, packed309 mm | 12.165 inLength, packed2625 mm | 103.347 inWeight, gross53.3 kg | 117.506 lbRegulatory Compliance/CertificationsAgency ClassificationCHINA-ROHS Below maximum concentration valueISO 9001:2015Designed, manufactured and/or distributed under this quality management systemREACH-SVHC Compliant as per SVHC revision on /ProductComplianceROHS CompliantUK-ROHSCompliantIncluded ProductsBSAMNT-2F–Mounting bracket for cylindrical pipe installations (60-115mm pipe diameter) for fix mechanicaltilt applications.Page of56* FootnotesPerformance Note Severe environmental conditions may degrade optimum performance66Page of。

MSM8939核心板项目规格书

I2S NFC 指纹模块接口摄像头闪光灯控制接口环境光传感器接口电池接口 USB MIC EAR Output SPEAKER 耳机
为外挂回声抑制预留 NFC 接口
SPI 总线指纹模块接口
支持
1 1 2 路，开关切换双路 1 路差分输出 1 路，0.8W max 1路 12+（不用的引脚复用可增加
27 28 30
PRI_MIC_GND PRI_MIC_P MIC_BIAS1
AUDIO AUDIO AUDIO
主 MIC 参考地主 MIC 输入信号 MIC 偏压 1.8v
主 MIC 地
不要接外围主地，直接 31 32 33 34 SEC_MIC_GND SEC_MIC_P SPKR_OUT_M SPKR_OUT_P AUDIO AUDIO AUDIO AUDIO 副 MIC 参考地副 MIC 输入引脚扬声器输出 M 扬声器输出 P 不要接外围主地，直接 35 36 37 38 39 40 42 43 44 GND_HEADSET EAR_OUT_M EAR_OUT_P CDC_HPH_L CDC_HPH_R MIC_P_HSET BLSP3_CS1_N PS_HOLD_PMIC_TP LED_R_DRV AUDIO GND AUDIO AUDIO AUDIO AUDIO AUDIO SPI DEBUG PIN LED_DRV 耳机参考地 earpice 输出 M earpice 输出 P 耳机左声道输出耳机右声道输出耳机 mic 输入指纹/SPI 片选信号 1，SPI sdcard 时使用 PS_HOLD 调试引脚 5mA 1.8v logic 接耳机地副 MIC 地
深圳元麦科技有限公司
WCDMA Band Standard CDMA Band Standard GSM BAND Standard WLAN/BT/ FM 802.11a/b/g/n/ac WLAN WIFI 热点 Bluetooth 4.0 FM 支持支持 RX 2.4G & 5.8G supported 支持 GSM 850/900/1800/1900; follow 3GPP spec CDMA 1x&EVDO 800; follow 3GPP spec WCDMA 850/900/1900/2100; follow 3GPP spec

EZRadioPRO 无线通信模块测试示例说明书

Rev. 0.1 1/15Copyright © 2015 by Silicon Laboratories AN657AN657R A D I O E V A L U A T I O N D E M O F O R EZR A D I O PRO ®1. IntroductionThe Radio Evaluation demo provides an easy way to evaluate the performances of the EZRadioPRO ® devices.The demo can be used in the laboratory to measure the basic RF parameters of the radio (output power, sensitivity,etc.); however, it is mainly designed to evaluate radio performance through range testing.A self explanatory, on-screen menu system walks the user through the radio configuration; so, the demo can be used in stand-alone mode without any PC.2. Hardware ConfigurationThe demo is designed for the Si4030-B1, Si4031-B1, Si4032-B1, Si4330-B1, Si4430-B1, Si4431-B1, Si4432-B1,Si4330-A1, Si4430-A1, Si4431-A1, Si4432-V2, Si100x-B1, Si100x-B2, Si101x-B1, Si101x-B2, Si102x-B2, and Si103x-B2 devices and runs on the UDP platform. More devices will be supported in later versions of the demo.2.1. Test Card and Pico Board OptionsTest cards are provided for Si4x3x, Si100x, and Si101x devices. Pico boards are also provided for the Si102x and Si103x. The Si10xx family includes an MCU and a radio device.The power amplifier and the LNA are not connected inside the Si4x3x and Si10xx devices. Several different test cards and Pico boards are introduced to provide examples for main connection schemes.On test cards or Pico boards using direct-tie connection, the TX and RX pins are directly connected externally,eliminating the need for an RF switch.On test cards or Pico boards using an RF switch, separate transmit and receive pins on the RFIC are connected to an antenna via an SPDT RF switch for single antenna operation. The radio device assists with control of the RF switch. By routing the RX State and TX State signals to any two GPIOs, the radio can automatically control the RF switch. The GPIOs disable the RF switch if the radio is not in active mode.On test cards using split connection, the TX and RX pins are routed to different antenna connectors.The actual antenna configuration of the test cards or Pico boards is stored in the EEPROM of each card. The demo automatically recognizes the antenna connections and sets the boards up accordingly. The user does not need to make these settings.Note:The transmit output of Si4x3x and Si10xx devices must be terminated properly before output power is enabled. This isaccomplished by using a proper antenna or connecting the power amplifier to an RF instrument that provides 50 termi-nation to ensure proper operation and protect the device from damage.AN6572Rev. 0.12.2. UDP PlatformThe example source codes run on the Universal Development Platform (UDP). The UDP consists of several boards. Both the MCU card and the test card are plugged into the UDP Motherboard (UP-BACKPLANE-01EK). It provides the power supply and USB connectivity for the development system. The MCU card (UPMP-F960-EMIF-EK) has several peripherals for simple software development (e.g. LEDs, Push Buttons, etc.), and it has a socket for various MCU selections. The UPPI-F960-EK MCU Pico board is used for software development and has a C8051F960 MCU on it. It controls the radio on the test card using the SPI bus. The test card is connected to the 40-pin connector (J3) on the UDP Motherboard where the following signals are used (UDP_MB refers to UDP Motherboard, and MCU refers to the MCU of the UPMP-F960-EMIF card). Pico boards, such as the UPPI-1020GM-915TR, include the MCU and the radio. Its function is equal to the MCU card and the radio test card. For more information on the UDP platform, refer to the “UDP Motherboard User's Guide”.Table 1. Pin Configuration of Si4x3xTable 2. Pin Configuration of Si102xAN657Rev. 0.132.2.1. Setting up the Development BoardBefore running the demo, the UDP platform must be configured according to the following instructions:If the test card is used:1. Connect the Si4x3x Test card to the 40-pin (J3) connector.2. Connect the antenna(s) to the SMA connector(s) of the test card.3. Set S5 to OFF to disable the 6.5 V voltage on Pin 36 of the test card connector.4. Short the JP19 and JP21 jumpers as shown in Figure 1 to provide VDD for the radio (the currentconsumption of the radio can be measured through these jumpers).5. Short P12(P0.4 and P0.5) on the UPMP-F960-EMIF card.Figure 1. Jumper Positions (JP19, JP21)If the Pico board is used:1. Plug the Pico board into the socket of the UPMP-F960-EMIF card.2. Connect the antenna(s) to the SMA connector(s) of the Pico board.3. Short P12(P0.4 and P0.5) on the UPMP-F960-EMIF card.2.2.2. Downloading and Running the DemoIf the setup is programmed with a different firmware, perform the following steps to set up the board for running the demo:1. Connect the USB debug adapter to the 10-pin J13 connector of the MCU card (see Figure 2).2. To power the board, connect a 9 V dc power supply to J20 (UDP_MB), or connect the development board to a PC over USB cable (J16 on UDP_MB).3. Turn on S3 on UDP_MB (Power switch).4. Start Silicon Labs IDE on your computer.5. Connect the IDE to the C8051F960 MCU (if test card is used) or Si102x, Si103x (if Pico boards is used) of the development board by pressing the Connect button on the toolbar or by invoking the menu Debug → Connect menu item.6. Erase the flash of the C8051F960 MCU or Si10xx in the Debug. Download object code → Erase all code space menu item.7. Download the desired example HEX file either by hitting the Download code (Alt+D) toolbar button or from the Debug → Download object code menu item.8. Hit the Disconnect toolbar button or invoke the Debug → Disconnect menu item to release the device from halt and let it run.Figure 2. J13 Connector of the MCU CardAN6573. DemoAfter running the demo, the first screen is the Welcome Screen, which shows the version number of the firmware. The Welcome Screen is shown for up to three seconds or as long as any of the push buttons is pressed.Figure 3. Welcome Screen3.1. Menu SystemThe on-screen menu system is designed for easy configuration. The user can select between laboratory and range test mode. For accurate range testing, the demo measures the actual packet error rate (PER) of the radio link. The RF settings of the radio can be configured based on predefined data rate, modulation, and frequency settings. It is also possible to change the packet configuration and the output power of the radio.Four push buttons are used to navigate in the menu system, and soft labels help the user understand the current function of the given buttons. In general, push button 1 (PB1) is used to select an item; push buttons 2 (PB2) and 3 (PB3) are used to scroll between the menu options, and push button 4 (PB4) is used to go to the next menu page.A small arrow ( ) points to the actual setting.The demo can be configured through four menu pages. The first page is used to select the functionality of the demo (packet error rate test or laboratory modes). The range test can be performed for single-way (Transmit or Receive mode) or bidirectional (Transceiver mode) radio communication.Figure 4. Range Test Demo ModeAN657In laboratory mode, the following tests are available:⏹ Unmodulated carrier (CW) mode is used to measure the output power of the radio.⏹ Random modulated (PN9) mode is used to verify the modulated output power.⏹ Bite Error Rate (BER) mode is used to measure the sensitivity of the radio with a continuous PN9modulated data stream.⏹ Packet Error Rate (PER) mode is used to measure the sensitivity of the radio based on packet reception.⏹ In Direct Receive (RAW RX) mode, the received continuous data stream is provided on one of the GPIOsof the radio.Figure 5. Laboratory ModeThe basic RF parameters (data rate, modulation, and frequency) can be selected from a predefined list on Menu Page 2.Most of the test cards or Pico boards are designed for a certain frequency band. There is an EEPROM on each test card or Pico board that contains this information. The demo offers only the available frequencies for which the test card or Pico board is designed.The available RF settings vary for different frequency bands.The menu page shown in Figure 7 is used to adjust the output power of the radio.Figure 7. Output Power SettingAN657Menu Page 4 is used to configure the packet configuration of the Packet Error Rate demo. The Self ID field is filled automatically based on the serial number of the given test card or Pico board. It is important to set up the destination ID accurately or the link will not work. The destination ID has to be the self ID of the other device.The default packet configuration of the demo is as follows:1. Destination ID is the same as the Self ID.2. Packet payload length is 5 bytes.3. Max. packets is 1000 packets.However, the length of the packet can be adjusted with the Packet Length option if the user wants to test the Packet Error Rate with a longer packet.The “Max. Packets” option defines the number of packets to be sent during the test.The Packet Length and the Max. Packet options must be configured only on the Transmit (initiator) side of the link and apply on the receive side automatically.Figure 8. Packet ConfigurationIf RAW mode of Laboratory mode is selected, there are only two pages for the user to configure the chip. For information on the sections on Menu Pages 2 (Figure 9) and 3 (Figures 10 and 11), refer to “AN463: Raw Data Mode with EZRadioPRO”.Figure 9. RF Parameters SettingFigure 10. Software Algorithms Setting when Deglitch Method is 2AN657Figure 11. Software Algorithms Setting when Deglitch Method is 13.2. Bidirectional Range TestAfter the demo is fully configured, it enters into the demo page, where the range test can be started.The screen is divided into three sections. At the top of the page, soft labels show the functions of the LEDs. LED1 blinks when a packet is transmitted; LED2 blinks if a packet is successfully received (with valid CRC and packet content matching the expected value), and LED3 shows the actual Receive Signal Strength Level (RSSI) of the received packet on a bar graph.The middle section of the screen, shown in Figure 12, summarizes the RF settings and the source/destination addresses.Figure 12. Demo PageAt the bottom of the screen, the soft labels show the actual functionality of the push buttons. PB3 and PB4 are used to go back to the configuration menu.After entering Demo mode, both ends of the link are in receive mode. The test starts if one end of the link starts to transmit ping packets; it can be initiated by pressing PB1. After that, the originator transmits a ping packet for the second board. If it receives the packet correctly, it transmits an acknowledgement packet. Each ping packet has a serial number (increased by the originator after every packet transmission) that is transmitted back by the acknowledgement packet. If the originator receives the acknowledgement within a predefined timeout, then it considers the link to be working; otherwise, it increases the number of missed packets by one. The originator also stores the number of transmitted PING packets, so the demo can calculate the Packet Error Rate based on this information. These are updated on the sixth line of the LCD after each packet transmission (number of received ACK / number of sent packets, actual packet error rate in percent).AN657Figure 13. Running PER TestThe demo runs as long as the number of transmitted packets has reached the predefined number or until it is interrupted by PB1.3.3. One-Way Range TestThe range test can also be performed with one-way radio communication. In this case, one end of the link needs to be set up as the transmitter (this will be the originator as described in the bidirectional link); the other end of the link needs to be the receiver.The test needs start at the transmit side by pressing PB1. The test runs as long as the number of transmitted packets reaching the predefined number or the demo is interrupted by PB1. The user can follow the number of transmitted packets on the LCD.Figure 14. Transmit NodeThe demo works the same as the bidirectional one; however, the number of lost packets and the packet error rate are defined only at the receive side based on the difference between the previously- and last-received packet IDs.Figure 15. Receive NodeAN6573.4. Laboratory ModesThese modes can be used to fully evaluate the receiving and transmitting performances of the radio. Note that all the lab modes require RF test equipment, such as a spectrum analyzer and RF signal generator.3.4.1. CW ModeCW mode is used to test the output power of the test card and obverse the unmodulated carrier spectrum. In this mode, only the frequency and the output power are configurable parameters.A spectrum analyzer is used to measure the transmit performances of the radio and must be connected through a proper RF cable to the TX SMA connector of the test card or Pico board.Figure 16. LCD Screen During CW ModeFigure 17. Unmodulated CW Signal Measured with Spectrum AnalyzerAN6573.4.2. PN9 ModeIn this mode, the power amplifier of the radio is generated internally using a pseudo-random (PN9 sequence) bit generator. The primary purpose of this mode is to observe the modulated spectrum without having to provide data for the radio.Figure 18 shows the last page of the PN9 mode, and Figure 18 shows the spectrum when the test card works in PN9 mode. The data rate is 256 kbps; the deviation is 128 kHz, and the modulation type is GFSK.Figure 18. LCD Screen during PN9 ModeFigure 19. PN9 Modulated Signal (GFSK, 256 kbps Data Rate, ±128 kHz Deviation)AN6573.4.3. BER ModeThe sensitivity of the radio can be measured with a random continuous data stream (PN9). This mode is called biterror rate. The radio is set into continuous receive mode. The RF data needs to be fed to the RX SMA of the testcard or Pico board, and the radio provides the received data and clock on its GPIOs. GPIO0 outputs the receiveddata. The received data must be fed back to the RF signal generator, which can then compare the transmitted andreceived data bits and calculate the bit error rate. By adjusting the output power of the signal generator, thesensitivity of the radio can be measured (it is typically measured for 10–3 BER). The suggested hardwareconfiguration is shown in Figure 20.Figure 20. BER Measurement SetupFigure 21. LCD Screen During BER ModeAN6573.4.4. PER ModeThe sensitivity of the radio can be measured by receiving packets. This test also involves an RF signal generator,which can transmit predefined packets after a trigger signal. In this mode, the radio is set to receive; then, thedemo generates a trigger (falling edge on LED1). Upon receiving the trigger, the generator must send a packet. Ifthe radio does not receive the packet within timeout, it increases the number of the missed packet counter andupdates the PER information and the actual RSSI on the LCD screen. By adjusting the output power of thegenerator, the sensitivity of the radio can be determined. It is usually defined for a 1% or 20% packet error rate.Figure 22. PER Test with Signal GeneratorFigure 23. Packet Error Rate Measurement SetupAN6573.4.5. RX RAW ModeThe radio can be used to receive a continuous bit stream and provide this information on one of the GPIOs. The Si443x allows for the reception of any packet structure without the need to follow the recommended packet structure in the data sheet. Refer to “AN463: Raw Data Mode with EZRadioPRO” for more details. The RAW data mode is implemented here as one of the laboratory modes. During this mode, the demo is in continuous Receive mode and provides the received data bits on GPIO1 and the data clock on GPIO2. After the software algorithm filter, the glitch of the received data is removed, and the clear received data is provided on the PIEZO speaker, which is located on the right top of the LCD card.Notes:1.Because we provide received data on GPIO1 and data clock on GPIO2, the test cards or Pico boards usingan RF switch cannot work in this mode.2. R10, R11, R12, R15, R16, and R19 on the UPMP-F960-EMIF card should be configured correctly. R11, R15,and R19 should be connected, and R10, R12, and R16 should be disconnected.Figure 24. RX RAW Mode Silicon Laboratories Inc.400 West Cesar Chavez Austin, TX 78701USASmart. Connected. Energy-Friendly .Products /products Quality /quality Support and Community Disclaimer Silicon Labs intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers using or intending to use the Silicon Labs products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Labs reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy or completeness of the included information. Silicon Labs shall have no liability for the consequences of use of the information supplied herein. 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Connect Tech XMC to PCIe 104 Adapter 用户指南说明书

XMC to PCIe/104 AdapterConnect Tech Inc.Tel:519-836-129142 Arrow Road Toll:800-426-8979 (North America only) Guelph, Ontario Fax:519-836-4878N1K 1S6 Email:********************************************Table of ContentsTable of Contents (2)Preface (3)Disclaimer (3)Customer Support Overview (3)Contact Information (3)Limited Product Warranty (4)Copyright Notice (4)Trademark Acknowledgment (4)ESD Warning (5)Revision History (5)Introduction (6)Product Features and Specifications (6)Product Overview (7)Connector Summary & Locations (7)Jumper Summary & Locations (8)Detailed Feature Description (9)PCIe/104 Connector (9)Description (9)Connectors & Jumpers (9)XMC Expansion Slot (10)Description (10)Connectors & Jumpers (10)Indicator LEDs (11)Description (11)Connectors & Jumpers (11)Typical Installation (12)PrefaceDisclaimerThe information contained within this user’s guide, including but not limited to any product specification, is subject to change without notice.Connect Tech assumes no liability for any damages incurred directly or indirectly from any technical ortypographical errors or omissions contained herein or for discrepancies between the product and the user’s guide.Customer Support OverviewIf you experience difficulties after reading the manual and/or using the product, contact the Connect Tech reseller from which you purchased the product. In most cases the reseller can help you with product installation and difficulties.In the event that the reseller is unable to resolve your problem, our highly qualified support staff can assist you.Our support section is available 24 hours a day, 7 days a week on our website at:/sub/support/support.asp. See the contact information section below for moreinformation on how to contact us directly. Our technical support is always free.Contact InformationMail/CourierConnect Tech Inc.Technical Support42 Arrow RoadGuelph, OntarioCanada N1K 1S6Email/Internet********************************************Telephone/FacsimileTechnical Support representatives are ready to answer your call Monday through Friday, from 8:30 a.m. to 5:00 p.m. Eastern Standard Time. Our numbers for calls are:Toll Free: 800-426-8979 (North America only)Telephone: 519-836-1291 (Live assistance available 8:30 a.m. to 5:00 p.m. EST,Monday to Friday)Facsimile: 519-836-4878 (on-line 24 hours)Limited Product WarrantyConnect Tech Inc. provides a 2 year Warranty for the XMC to PCIe/104 Adapter. Should this product, in Connect Tech Inc.'s opinion, fail to be in good working order during the warranty period, Connect Tech Inc.will, at its option, repair or replace this product at no charge, provided that the product has not been subjected to abuse, misuse, accident, disaster or non-Connect Tech Inc. authorized modification or repair.You may obtain warranty service by delivering this product to an authorized Connect Tech Inc. business partner or to Connect Tech Inc. along with proof of purchase. Product returned to Connect Tech Inc. must be pre-authorized by Connect Tech Inc. with an RMA (Return Material Authorization) number marked on the outside of the package and sent prepaid, insured and packaged for safe shipment. Connect Tech Inc. will return this product by prepaid ground shipment service.The Connect Tech Inc. Limited Warranty is only valid over the serviceable life of the product. This is defined as the period during which all components are available. Should the product prove to be irreparable, Connect Tech Inc. reserves the right to substitute an equivalent product if available or to retract the Warranty if no replacement is available.The above warranty is the only warranty authorized by Connect Tech Inc. Under no circumstances willConnect Tech Inc. be liable in any way for any damages, including any lost profits, lost savings or otherincidental or consequential damages arising out of the use of, or inability to use, such product. Copyright NoticeThe information contained in this document is subject to change without notice. Connect Tech Inc. shall not be liable for errors contained herein or for incidental consequential damages in connection with the furnishing, performance, or use of this material. This document contains proprietary information that is protected by copyright. All rights are reserved. No part of this document may be photocopied, reproduced, or translated to another language without the prior written consent of Connect Tech, Inc.Copyright 2016 by Connect Tech, Inc.Trademark AcknowledgmentConnect Tech, Inc. acknowledges all trademarks, registered trademarks and/or copyrights referred to in this document as the property of their respective owners. Not listing all possible trademarks or copyrightacknowledgments does not constitute a lack of acknowledgment to the rightful owners of the trademarks and copyrights mentioned in this document.ESD WarningElectronic components and circuits are sensitive toElectroStatic Discharge (ESD). When handling any circuit board assemblies including Connect Tech COM Express carrier assemblies, it is recommended that ESD safety precautions be observed. ESD safe best practices include, but are not limited to:∙ Leaving circuit boards in their antistatic packaginguntil they are ready to be installed.∙ Using a grounded wrist strap when handling circuitboards, at a minimum you should touch a grounded metal object to dissipate any static charge that may be present on you.∙ Only handling circuit boards in ESD safe areas, whichmay include ESD floor and table mats, wrist strap stations and ESD safe lab coats.∙ Avoiding handling circuit boards in carpeted areas. ∙ Try to handle the board by the edges, avoiding contactwith components.Revision HistoryIntroductionConnect Tech’s XMC to PCIe/104 Adapter Board is an engineering tool for the purpose of enabling rapid development of systems requiring the use of next generation form factor peripheral cards. This product complies with the VITA 42 specification.Product Features and SpecificationsProduct Overview Connector Summary & Locations ADG095 Top ViewADG095 BottomViewJumper Summary & LocationsDetailed Feature DescriptionPCIe/104 ConnectorDescriptionPCIe/104 interface to CPU module Connectors & JumpersXMC Expansion SlotDescriptionM.2 interface slots for expansion cards. Can be ordered in either key E or key BM. Card type support is listed below.See Part Numbers/Ordering Information section for more ordering details.Connectors & JumpersIndicator LEDsDescriptionIndicator LED’s Connectors & JumpersTypical InstallationCard may be installed in a stack-up or stack-down configuration. 10mm height, M2.5 standoffs required between XMC adapter and XMC expansion card. Example stack-up on Connect Tech’s Com Express Type 6 104e Carrier shown below:。

Analog Devices HMC8038W 高隔离Silicon SPDT非反射开关数据手册说明

High Isolation, Silicon SPDT,Nonreflective Switch, 0.1 GHz to 6.0 GHz Data Sheet HMC8038WRev. 0Document FeedbackInformation furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2017 Analog Devices, Inc. All rights reserved. Technical Support FEATURESNonreflective, 50 Ω designHigh isolation: 60 dB typicalLow insertion loss: 0.8 dB typical High power handling34 dBm through path29 dBm terminated pathHigh linearityP0.1dB: 35 dBm typicalIP3: 60 dBm typicalESD ratings4 kV HBM, Class 3A1.25 kV CDMSingle positive supply3.3 V to 5 V1.8 V-compatible controlAll off state control16-lead, 4 mm × 4 mm LFCSP (16 mm2) Qualified for automotive applicationsAPPLICATIONSAutomotive telematics FUNCTIONAL BLOCK DIAGRAM6543V DDV CTLRFCNICNICNICNICNIC15913-1Figure 1.GENERAL DESCRIPTIONThe HMC8038W is a high isolation, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, yielding up to 62 dB of isolation up to 4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm of input third-order intercept. Power handling is excellent up to 6.0 GHz, and it offers an input power for an 0.1 dB compression point (P0.1dB) of 35 dBm (V DD = 5 V). On-chip circuitry operates a single, positive supply voltage from 3.3 V to 5 V, as well as a single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at very low dc currents. An enable input (EN) set to logic high places the switch in an all off state, in which RFC is reflective. The HMC8038W has ESD protection on all device pins, including the RF interface, and can stand 4 kV human body model (HBM) and 1.25 kV charged device model (CDM). The HMC8038W offers very fast switching and RF settling times of 150 ns and 170 ns, respectively. The device comes in a RoHS compliant, compact 4 mm × 4 mm LFCSP package.HMC8038W Data SheetRev. 0 | Page 2 of 11TABLE OF CONTENTSFeatures .............................................................................................. 1 Applications ....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3 Absolute Maximum Ratings ............................................................ 5 ESD Caution .................................................................................. 5 Pin Configuration and Function Descriptions ............................. 6 Interface Schematics (6)Typical Performance Characteristics ..............................................7 Insertion Loss, Isolation, and Return Loss ................................7 Input Compression and Input Third-Order Intercept .............8 Theory of Operation .........................................................................9 Applications Information .............................................................. 10 Outline Dimensions ....................................................................... 11 Ordering Guide .......................................................................... 11 Automotive Products .. (11)REVISION HISTORY8/2017—Revision 0: Initial VersionData SheetHMC8038WRev. 0 | Page 3 of 11SPECIFICATIONSV DD = 3.3 V to 5 V , V CTL = 0 V/V DD , T A = 25°C, 50 Ω system, unless otherwise noted. Table 1.ParameterTest Conditions/Comments Min Typ Max Unit INSERTION LOSS 0.1 GHz to 2.0 GHz 0.7 1.0 dB 2.0 GHz to 4.0 GHz 0.8 1.1 dB4.0 GHz to 6.0 GHz 0.9 1.3 dB ISOLATION0.1 GHz to 2.0 GHz 55 70 dB RFC to RF1/RF2 (Worst Case) 2.0 GHz to 4.0 GHz 50 60 dB4.0 GHz to 6.0 GHz 40 51 dB RETURN LOSSOn State 0.1 GHz to 2.0 GHz 24 dB 2.0 GHz to 4.0 GHz 18 dB4.0 GHz to 6.0 GHz 18 dB Off State 0.1 GHz to 2.0 GHz 23 dB 2.0 GHz to 4.0 GHz 22 dB4.0 GHz to 6.0 GHz 16 dB SWITCHING SPEEDt RISE , t FALL 10%/90% RF OUT60 ns t ON , t OFF50% V CTL to 10%/90% RF OUT150 ns RF SETTLING TIME 50% V CTL to 0.1 dB margin of final RF OUT 170 ns INPUT POWER1 dB Compression (P1dB) V DD = 3.3 V 34 dBV DD = 5 V 36 dB 0.1 dB Compression (P0.1dB) V DD = 3.3 V 33 dBV DD = 5 V35 dB INPUT THIRD-ORDER INTERCEPT (IP3)Two-tone input power = 14 dBm/tone 60 dBm RECOMMENDED OPERATING CONDITIONS Bias Voltage Range (V DD )3.0 5.4 V Control Voltage Range (V CTL , EN) 0 V DD V RF Input Power 1T CASE = 105°C Through path (5 V/3.3 V) 31/30 dBm Terminated path 24 dBmHot switching24 dBm T CASE = 85°C Through path (5 V/3.3 V) 34/33 dBm Terminated path 27 dBmHot switching27 dBm T CASE = 25°C Through path (5 V/3.3 V) 34/33 dBm Terminated path 29 dBmHot switching27 dBm T CASE = −40°C Through path (5 V/3.3 V) 34/33 dBm Terminated path 29 dBmHot switching 27 dBm Case Temperature Range (T CASE )−40 +105 °C1Exposure to levels between the recommended operating conditions and the absolute maximum rating conditions for extended periods may affect device reliability.HMC8038WData SheetRev. 0 | Page 4 of 11Table 2. Digital Control VoltagesStateV DD = 3.3 V (±5% V DD , T CASE = −40°C to +105°C) V DD = 5 V (±5% V DD , T CASE = −40°C to +105°C) Input Control VoltageLow (V IL ) 0 V to 0.85 V at <1 µA, typical 0 V to 1.20 V at <1 µA, typical High (V IH )1.15 V to 3.3 V at <1 µA, typical1.55 V to 5.0 V at <1 µA, typicalTable 3. Bias Voltage vs. Supply CurrentParameterSymbol Min Typ Max Unit Typical I DD (mA) SUPPLY CURRENT I DD V DD = 3.3 V 0.14 mA 0.14 V DD = 5 V0.16mA0.16Data SheetHMC8038WRev. 0 | Page 5 of 11ABSOLUTE MAXIMUM RATINGSTable 4.ParameterRatingBias Voltage Range (V DD )−0.3 V to +5.5 VControl Voltage Range (V CTL , EN) −0.5 V to V DD + (+0.5 V) RF Input Power 1 (see Figure 2)Through Path 35 dBm Terminated Path 30 dBm Hot Switching30 dBm Channel Temperature135°CStorage Temperature Range −65°C to +150°C Peak Reflow 260°C ESD SensitivityHBM 4 kV (Class 3A) CDM1.25 kV1For recommended operating conditions, see Table 1.Stresses at or above those listed under Absolute MaximumRatings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.During the through mode of operation, the supply voltage scales the maximum allowed input power. The power handling vs. frequency for the 3.3 V and 5 V supplies is shown in Figure 2.4035302520123456I N P U T P O W E R (d B m )FREQUENCY (GHz)15913-002Figure 2. Through Path, Power Handling vs. FrequencyTHERMAL RESISTANCEThermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required.θJC is the junction to case thermal resistance. Table 5. Thermal ResistancePackage Type θJC Unit CP-16-421Through Path 110 °C/W Terminated Path100 °C/W1Thermal impedance simulated values are based on a JEDEC 2S2P thermal test board with nine thermal vias. See JEDEC JESD51.ESD CAUTIONHMC8038WData SheetRev. 0 | Page 6 of 11PIN CONFIGURATION AND FUNCTION DESCRIPTIONS12111019657816151413V DD V CTL RFC NIC RF2N I CN I CN I CN I CGND GND RF1E N N I C N I C N I C NOTES1.NIC = NOT INTERNALLY CONNECTED. THESE PINS ARE NOT CONNECTED INTERNALLY; HOWEVER, ALL DATA SHOWN HEREIN WAS MEASURED WITH THESE PINS CONNECTED TO RF/DC GROUND EXTERNALLY.2.EXPOSED PAD. EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND.15913-003Figure 3. Pin ConfigurationTable 6. Pin Function DescriptionsPin No. MnemonicDescription1 V DD Supply Voltage Pin.2 V CTL Control Input Pin. See Figure 5 for the V CTL interface schematic. Refer to Table 7 and the recommended input control voltage range in Table 2.3RFC RF Common Port. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin.4, 6 to 8, 13 to 16 NIC Not Internally Connected. These pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/dc ground externally.5 EN Enable Input Pin. See Figure 5 for the EN interface schematic. Refer to Table 7 and the recommended input control voltage range in Table 2.9 RF1 RF Port 1. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin. 10, 11 GND Ground. The package bottom has an exposed metal pad that must connect to the printed circuit board (PCB) RF ground. See Figure 4 for the GND interface schematic.12 RF2 RF Port 2. This pin is dc-coupled and matched to 50 Ω. A dc blocking capacitor is required on this pin.EPADExposed Pad. Exposed pad must be connected to RF/dc ground.INTERFACE SCHEMATICS15913-004Figure 4. GND Interface SchematicV CTL 15913-005Figure 5. Logic Control Interface SchematicTable 7. Truth TableControl Input Signal Path StateV CTL State EN State RFC to RF1 RFC to RF2 Low Low Off On High Low On Off Low High Off Off High HighOff OffData SheetHMC8038WRev. 0 | Page 7 of 11TYPICAL PERFORMANCE CHARACTERISTICSINSERTION LOSS, ISOLATION, AND RETURN LOSS–0.5–1.5–1.0–2.0–2.501234567I N S E R T I O N L O S S (d B )FREQUENCY (GHz)15913-006Figure 6. Insertion Loss vs. Frequency over Temperatures, V DD = 5 V–20–60–40–80–1001234567I S O L A T I O N (d B )FREQUENCY (GHz)15913-007Figure 7. Isolation Between RFC and RF1/RF2 vs. Frequency at V DD = 3.3 V to 5 V0–40–30–35–25–15–5–20–10R E T U R N L O S S (d B )1234567FREQUENCY (GHz)15913-008Figure 8. Return Loss vs. Frequency at V DD = 3.3 V to 5 V–0.5–1.5–1.0–2.0–2.501234567I N S E R T I O N L O S S (d B )FREQUENCY (GHz)15913-009Figure 9. Insertion Loss vs. Frequency over Temperatures, V DD = 3.3 V0–80–60–70–50–30–10–40–20I S O L A T I O N (d B)1234567FREQUENCY (GHz)15913-010Figure 10. Isolation Between RF1 and RF2 vs. Frequency at V DD = 3.3 V to 5 VHMC8038WData SheetRev. 0 | Page 8 of 11INPUT COMPRESSION AND INPUT THIRD-ORDER INTERCEPT40383634323028260213456I N P U T C O M P R E S S I O N (d B m )FREQUENCY (GHz)15913-011Figure 11. Input Compression 1 dB Point vs. Frequency over Temperature,V DD = 5 V40383634323028260213456I N P U T C O M P R E S S I O N (d B m )FREQUENCY (GHz)15913-012Figure 12. Input Compression 1 dB Point vs. Frequency over Temperature,V DD = 3.3 V65605550450123456I P 3 (d B m )FREQUENCY (GHz)15913-013Figure 13. Input Third-Order Intercept (IP3) Point vs. Frequency, V DD = 5 V40383634323028260213456I N P U T C O M P R E S S I O N (d B m )FREQUENCY (GHz)15913-014Figure 14. Input Compression 0.1 dB Point vs. Frequency over Temperature,V DD = 5 V40383634323028260213456I N P U T C O M P R E S S I O N (d B m )FREQUENCY (GHz)15913-015Figure 15. Input Compression 0.1 dB Point vs. Frequency over Temperature,V DD = 3.3 V65605550450123456I P 3 (d B m )FREQUENCY (GHz)15913-016Figure 16. Input Third-Order Intercept (IP3) Point vs. Frequency, V DD = 3.3 VData SheetHMC8038WRev. 0 | Page 9 of 11THEORY OF OPERATIONThe HMC8038W requires a single-supply voltage applied to the V DD pin. Bypassing capacitors are recommended on the supply line to minimize RF coupling.The HMC8038W is controlled via two digital control voltages applied to the V CTL pin and the EN pin. A small bypassing capacitor is recommended on these digital signal lines to improve the RF signal isolation.The HMC8038W is internally matched to 50 Ω at the RF input port (RFC) and the RF output ports (RF1 and RF2); therefore, no external matching components are required. The RFx pins are dc-coupled, and dc blocking capacitors are required on the RF lines. The design is bidirectional; the input and outputs are interchangeable.The ideal power-up sequence is as follows:1. Power up GND.2. Power up V DD .3. Power up the digital control inputs. The relative order ofthe logic control inputs is not important. Powering the digital control inputs before the V DD supply can inadvertently forward bias and damage ESD protection structures. 4. Power up the RF input.With the EN pin is logic low, the HMC8038W has two operation modes: on and off. Depending on the logic level applied to the V CTL pin, one RF output port (for example, RF1) is set to on mode, by which an insertion loss path is provided from the input to the output, as the other RF output port (for example, RF2) is set to off mode, by which the output is isolated from the input. When the RF output port (RF1 or RF2) is in isolation mode, internally terminate it to 50 Ω, and the port absorbs the applied RF signal.When the EN pin is logic high, the EN pin sets the HMC8038W switch to off mode. In off mode, both output ports are isolated from the input, and the RFC port is open reflective.Table 8. Switch Operation ModeDigital Control Inputs Switch ModeV EN V CTL RFC to RF1 RFC to RF20 0Off mode. The RF1 port is isolated from the RFC port and is internally terminated to a 50 Ω load to absorb the applied RF signals.On mode. A low insertion loss path from the RFC port to the RF2 port. 0 1On mode. A low insertion loss path from the RFC port to the RF1 port.Off mode. The RF2 port is isolated from the RFC portand is internally terminated to a 50 Ω load to absorb the applied RF signals.1 Don’t careAll off mode. Both the RF1 and RF2 ports are isolated from the RFC port, and the RFC port is reflective.HMC8038WData SheetRev. 0 | Page 10 of 11APPLICATIONS INFORMATIONThe HMC8038W application circuit is shown in Figure 17. Bypass capacitors are used on the supply and control traces to filter high frequency noise. Signal lines at the RF ports aredesigned to have 50 Ω impedance. The GND, NIC pins, and the exposed pad of the package are directly connected to the ground plane. For optimum high frequency and thermalgrounding, as many plated through vias as possible are arranged around the RF transmission lines and under the exposed pad of the package.V DD15913-017Figure 17. HMC8038W Application CircuitData Sheet HMC8038WRev. 0 | Page 11 of 11OUTLINE DIMENSIONS4.104.00 SQ 3.900.350.300.252.252.10 SQ 1.950.65BSCBOTTOM VIEWTOP VIEW0.700.600.50SEATING PLANE0.05 MAX 0.02 NOM0.203 REF0.25 MINCOPLANARITY0.08PIN 1INDICATOR0.900.850.80COMPLIANT TO JEDEC STANDARDS MO-220-VGGC.FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONSSECTION OF THIS DATA SHEET.05-23-2016-A000DETAIL A (JEDEC 95)EXPOSED PADFigure 18. 16-Lead Lead Frame Chip Scale Package [LFCSP]4 mm × 4 mm Body and 0.85 mm Package Height(CP-16-42)Dimensions shown in millimetersORDERING GUIDEModel1, 2Temperature RangeMSL Rating 3Package DescriptionPackage Option Quantity Branding 4,5 HMC8038WLP4CE −40°C to +105°C MSL3 16-Lead Lead Frame Chip Scale Package [LFCSP], ReelCP-16-42 50 8038W#XXXXX MMYYHMC8038WLP4CETR−40°C to +105°CMSL316-Lead Lead Frame Chip Scale Package [LFCSP], ReelCP-16-42500 8038W#XXXXX MMYY1 E = RoHs Compliant Part.2W = Qualified for Automotive Applications. 3The maximum peak reflow temperature is 260°C. See the Absolute Maximum Ratings section. 45-digit lot number: XXXXX. 54-digit date code: MMYY.AUTOMOTIVE PRODUCTSThe HMC8038W models are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. Note that these automotive models may have specifications that differ from the commercial models; therefore, designers should review the Specifications section of this data sheet carefully. Only the automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for these models.©2017 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners.D15913-0-8/17(0)。

Efficient Algorithms for Citation Network Analysis

a r X i v :c s /0309023v 1 [c s .D L ] 14 S e p 2003Efﬁcient Algorithms for Citation Network AnalysisVladimir BatageljUniversity of Ljubljana,Department of Mathematics,Jadranska 19,1111Ljubljana,Slovenia e-mail:vladimir.batagelj@uni-lj.siAbstractIn the paper very efﬁcient,linear in number of arcs,algorithms for determining Hum-mon and Doreian’s arc weights SPLC and SPNP in citation network are proposed,and some theoretical properties of these weights are presented.The nonacyclicity problem in citation networks is discussed.An approach to identify on the basis of arc weights an im-portant small subnetwork is proposed and illustrated on the citation networks of SOM (self organizing maps)literature and US patents.Keywords:large network,acyclic,citation network,main path,CPM path,arc weight,algorithm,self organizing maps,patent1IntroductionThe citation network analysis started with the paper of Garﬁeld et al.(1964)[10]in which the introduction of the notion of citation network is attributed to Gordon Allen.In this paper,on the example of Asimov’s history of DNA [1],it was shown that the analysis ”demonstrated a high degree of coincidence between an historian’s account of events and the citational relationship between these events ”.An early overview of possible applications of graph theory in citation network analysis was made in 1965by Garner [13].The next important step was made by Hummon and Doreian (1989)[14,15,16].They proposed three indices (NPPC,SPLC,SPNP)–weights of arcs that provide us with automatic way to identify the (most)important part of the citation network –the main path analysis.In this paper we make a step further.We show how to efﬁciently compute the Hummon and Doreian’s weights,so that they can be used also for analysis of very large citation networks with several thousands of vertices.Besides this some theoretical properties of the Hummon and Doreian’s weights are presented.The proposed methods are implemented in Pajek –a program,for Windows (32bit),for analysis of large networks .It is freely available,for noncommercial use,at its homepage [4].For basic notions of graph theory see Wilson and Watkins [18].Table1:Citation network characteristicsnetwork m n0k C∆in24 DNA6013700 2231218161340 Small world198816316000 105911024282320 Cocitation49293519020 308412678321052 Kroto319500116660 447023704247350 Zewail542531015166382 8843782126310984 Desalination25751141111573121 377476813764117327700Figure1:Citation Network in Standard FormLet I={(u,u):u∈U}be the identity relation on U andQ∩I=∅.The relation Q⋆=3Analysis of Citation NetworksAn approach to the analysis of citation network is to determine for each unit/arc its impor-tance or weight.These values are used afterward to determine the essential substructures in the network.In this paper we shall focus on the methods of assigning weights w:R→I R+0to arcs proposed by Hummon and Doreian[14,15]:•node pair projection count(NPPC)method:w d(u,v)=|R inv⋆(u)|·|R⋆(v)|•search path link count(SPLC)method:w l(u,v)equals the number of”all possible search paths through the network emanating from an origin node”through the arc(u,v)∈R, [14,p.50].•search path node pair(SPNP)method:w p(u,v)”accounts for all connected vertex pairs along the paths through the arc(u,v)∈R”,[14,p.51].3.1Computing NPPC weightsTo compute w d for sets of units of moderate size(up to some thousands of units)the matrix representation of R can be used and its transitive closure computed by Roy-Warshall’s algorithm [9].The quantities|R⋆(v)|and|R inv⋆(u)|can be obtained from closure matrix as row/column sums.An O(nm)algorithm for computing w d can be constructed using Breath First Search from each u∈U to determine|R inv⋆(u)|and|R⋆(v)|.Since it is of order at least O(n2)this algorithm is not suitable for larger networks(several ten thousands of vertices).3.2Search path count methodTo compute the SPLC and SPNP weights we introduce a related search path count(SPC) method for which the weights N(u,v),uRv count the number of different paths from s to t (or from Min R to Max R)through the arc(u,v).To compute N(u,v)we introduce two auxiliary quantities:let N−(v)denotes the number of different s-v paths,and N+(v)denotes the number of different v-t paths.Every s-t pathπcontaining the arc(u,v)∈R can be uniquely expressed in the formπ=σ◦(u,v)◦τwhereσis a s-u path andτis a v-t path.Since every pair(σ,τ)of s-u/v-t paths gives a corresponding s-t path it follows:N(u,v)=N−(u)·N+(v),(u,v)∈RwhereN−(u)= 1u=sv:vRu N−(v)otherwiseandN+(u)= 1u=tv:uRv N+(v)otherwiseThis is the basis of an efﬁcient algorithm for computing the weights N(u,v)–after the topo-logical sort of the network[9]we can compute,using the above relations in topological order, the weights in time of order O(m).The topological order ensures that all the quantities in the right side expressions of the above equalities are already computed when needed.The counters N(u,v)are used as SPC weights w c(u,v)=N(u,v).3.3Computing SPLC and SPNP weightsThe description of SPLC method in[14]is not very precise.Analyzing the table of SPLC weights from[14,p.50]we see that we have to consider each vertex as an origin of search paths.This is equivalent to apply the SPC method on the extended network N l=(U′,R l)R l:=R′∪{s}×(U\∪R(s))It seems that there are some errors in the table of SPNP weights in[14,p.51].Using the deﬁnition of the SPNP weights we can again reduce their computation to SPC method applied on the extended network N p=(U′,R p)R p:=R∪{s}×U∪U×{t}∪{(t,s)}in which every unit u∈U is additionaly linked from the source s and to the sink t.3.4Computing the numbers of paths of length kWe could use also a direct approach to determine the weights w p.Let L−(u)be the number of different paths terminating in u and L+(u)the number of different paths originating in u.Then for uRv it holds w p(u,v)=L−(u)·L+(v).The procedure to determine L−(u)and L+(u)can be compactly described using two fami-lies of polynomial generating functionsP−(u;x)=h(u)k=0p−(u,k)x k and P+(u;x)=h−(u)k=0p+(u,k)x k,u∈Uwhere h(u)is the depth of vertex u in network(U,R),and h−(u)is the depth of vertex u in network(U,R inv),The coefﬁcient p−(u,k)counts the number of paths of length k to u,and p+(u,k)counts the number of paths of length k from u.Again,by the basic principles of combinatoricsP−(u;x)= 0u=s1+x· v:vRu P−(v;x)otherwiseandP+(u;x)= 0u=t1+x· v:uRv P+(v;x)otherwiseand both families can be determined using the deﬁnitions and computing the polynomials in the(reverse for P+)topological ordering of U.The complexity of this procedure is at most O(hm).FinallyL−(u)=P−(u;1)and L+(v)=P+(v;1)In real life citation networks the depth h is relatively small as can be seen from the Table 1.The complexity of this approach is higher than the complexity of the method proposed in subsection 3.3–but we get more detailed information about paths.May be it would make sense to consider ’aging’of references by L −(u )=P −(u ;α),for selected α,0<α≤1.3.5Vertex weightsThe quantities used to compute the arc weights w can be used also to deﬁne the corresponding vertex weights tt d (u )=|R inv ⋆(u )|·|R ⋆(u )|t c (u )=N −(u )·N +(u )t l (u )=N ′−(u )·N ′+(u )t p (u )=L −(u )·L +(u )They are counting the number of paths of selected type through the vertex u .3.6Implementation detailsIn our ﬁrst implementation of the SPNP method the values of L −(u )and L +(u )for some large networks (Zewail and Lederberg)exceeded the range of Delphi’s LargeInt (20decimal places).We decided to use the Extended real numbers (range =3.6×10−4951..1.1×104932,19-20signiﬁcant digits)for counters.This range is safe also for very large citation networks.To see this,let us denote N ∗(k )=max u :h (u )=k N −(u ).Note that h (s )=0and uRv ⇒h (u )<h (v ).Let u ∗∈U be a unit on which the maximum is attained N ∗(k )=N −(u ∗).ThenN ∗(k )=v :vRu ∗N −(v )≤v :vRu ∗N ∗(h (v ))≤v :vRu ∗N ∗(k −1)==deg in (u ∗)·N ∗(k −1)≤∆in (k )·N ∗(k −1)where ∆in (k )is the maximal input degree at depth k .Therefore N ∗(h )≤ hk =1∆in (k )≤∆h in .A similar inequality holds also for N +(u ).From both it followsN (u,v )≤∆h (u )in ·∆h −(v )out≤∆H −1where H =h (t )and ∆=max(∆in ,∆out ).Therefore for H ≤1000and ∆≤10000we getN (u,v )≤∆H −1≤104000which is still in the range of Extended reals.Note also that in the derivation of this inequality we were very generous –in real-life networks N (u,v )will be much smaller than ∆H −1.Very large/small numbers that result as weights in large networks are not easy to use.One possibility to overcome this problem is to use the logarithms of the obtained weights –logarith-mic transformation is monotone and therefore preserve the ordering of weights (importance of vertices and arcs).The transformed values are also more convenient for visualization with line thickness of arcs.4Properties of weights4.1General properties of weightsDirectly from the deﬁnitions of weights we getw k(u,v;R)=w k(v,u;R inv),k=d,c,pandw c(u,v)≤w l(u,v)≤w p(u,v)Let N A=(U A,R A)and N B=(U B,R B),U A∩U B=∅be two citation networks,andN1=(U′A,R′A)and N2=((U A∪U B)′,(R A∪R B)′)the corresponding standardized networks of theﬁrst network and of the union of both networks.Then it holds for all u,v∈U A and for all p,q∈R At(1)k(u)t(2)k(v),andw(1)k(p)w(2)k(q),k=d,c,l,pwhere t(1)and w(1)is a weight on network N1,and t(2)and w(2)is a weight on network N2.This means that adding or removing components in a network do not change the ratios(ordering)of the weights inside components.Let N1=(U,R1)and N2=(U,R2)be two citation networks over the same set of units U and R1⊆R2thenw k(u,v;R1)≤w k(u,v;R2),k=d,c,p4.2NPPC weightsIn an acyclic network for every arc(u,v)∈R holdR inv⋆(u)∩R⋆(v)=∅and R inv⋆(u)∪R⋆(v)⊆Utherefore|R inv⋆(u)|+|R⋆(v)|≤n and,using the inequality √2(a+b),alsow d(u,v)=|R inv⋆(u)|·|R⋆(v)|≤1Rv⇒R⋆(u)⊂R⋆(v)The weights w d are larger in the’middle’of the network.A more uniform(but less sensitive)weight would be w s(u,v)=|R inv⋆(u)|+|R⋆(v)|or in the normalized form w′s(u,v)=14.3SPC weightsFor theﬂow N(u,v)the Kirchoff’s node law holds:For every node v in a citation network in standard form it holdsincomingﬂow=outgoingﬂow=t c(v)Proof:N(x,v)= x:xRv N−(x)·N+(v)=( x:xRv N−(x))·N+(v)=N−(v)·N+(v) x:xRvN(v,y)= y:vRy N−(v)·N+(y)=N−(v)· y:vRy N+(y)=N−(v)·N+(v) y:vRy2 From the Kirchoff’s node law it follows that the totalﬂow through the citation network equals N(t,s).This gives us a natural way to normalize the weightsN(u,v)w(u,v)=Figure2:Preprint transformationBut,new problems arise:What is the right value of the’aging’factor?Is there an efﬁcient algorithm to count the restricted trails?The other possibility,since a citation network is usually almost acyclic,is to transform it into an acyclic network•by identiﬁcation(shrinking)of cyclic groups(nontrivial strong components),or •by deleting some arcs,or•by transformations such as the’preprint’transformation(see Figure2)which is based on the following idea:Each paper from a strong component is duplicated with its’preprint’version.The papers inside strong component cite preprints.Large strong components in citation network are unlikely–their presence usually indicates an error in the data.An exception from this rule is the citation network of High Energy Particle Physics literature[20]from arXiv.In it different versions of the same paper are treated as a unit.This leads to large strongly connected components.The idea of preprint transformation can be used also in this case to eliminate cycles.6First Example:SOM citation networkThe purpose of this example is not the analysis of the selected citation network on SOM(self-organizing maps)literature[12,24,23],but to present typical steps and results in citation net-work analysis.We made our analysis using program Pajek.First we test the network for acyclicity.Since in the SOM network there are11nontrivial strong components of size2,see Table1,we have to transform the network into acyclic one.We decided to do this by shrinking each component into a single vertex.This operation produces some loops that should be removed.Figure3:Main path and CPM path in SOM network with SPC weights Now,we can compute the citation weights.We selected the SPC(search path count)method. It returns the following results:the network with citation weights on arcs,the main path network and the vector with vertex weights.In a citation network,a main path(sub)network is constructed starting from the source vertex and selecting at each step in the end vertex/vertices the arc(s)with the highest weight, until a sink vertex is reached.Another possibility is to apply on the network N=(U,R,w)the critical path method (CPM)from operations research.First we draw the main path network.The arc weights are represented by the thickness of arcs.To produce a nice picture of it we apply the Pajek’s macro Layers which contains a sequence of operations for determining a layered layout of an acyclic network(used also in analysis of genealogies represented by p-graphs).Some experiments with settings of different options are needed to obtain a right picture,see left part of Figure3.In its right part the CPMTable2:15Hubs and AuthoritiesRank Hub Id Authority Id1CLARK-JW-1991-V36-P1259HOPFIELD-JJ-1982-V79-P25540.063660.334273HUANG-SH-1994-V17-P212KOHONEN-T-1990-V78-P14640.057210.123985SHUBNIKOV-EI-1997-V64-P989#GARDNER-E-1988-V21-P2570.054960.093537VEMURI-V-1993-V36-P203MCELIECE-RJ-1987-V33-P4610.054090.076569BUSCEMA-M-1998-V33-P17RUMELHART-DE-1985-V9-P750.052580.0727111WELLS-DM-1998-V41-P173ANDERSON-JA-1977-V84-P4130.052330.0703313SMITH-KA-1999-V11-P15KOSKO-B-1987-V26-P49470.051490.0580215KOHONEN-T-1990-V78-P1464GROSSBERG-S-1987-V11-P23 path is presented.We see that the upper parts of both paths are identical,but they differ in the continuation. The arcs in the CPM path are thicker.We could display also the complete SOM network using essentially the same procedure as for the displaying of main path.But the obtained picture would be too complicated(too many vertices and arcs).We have to identify some simpler and important subnetworks inside it.Inspecting the distribution of values of weights on arcs(lines)we select a threshold0.007 and determine the corresponding arc-cut–delete all arcs with weights lower than selected threshold and afterwards delete also all isolated vertices(degree=0).Now,we are ready to draw the reduced network.Weﬁrst produce an automatic layout.We notice some small unimportant components.We preserve only the large main component,draw it and improve the obtained layout manually.To preserve the level structure we use the option that allows only the horizontal movement of vertices.Finally we label the’most important vertices’with their labels.A vertex is considered important if it is an endpoint of an arc with the weight above the selected threshold(in our case 0.05).The obtained picture of SOM’main subnetwork’is presented in Figure4.We see that the SOMﬁeld evolved in two main branches.From CARPENTER-1987the strongest(main path) arc is leading to the right branch that after some steps disappears.The left,more vital branch is detected by the CPM path.Further investigation of this is left to the readers with additional knowledge about the SOMﬁeld.As a complementary information we can determine Kleinberg’s hubs and authorities vertex weights[17].Papers that are cited by many other papers are called authorities;papers that cite many other documents are called hubs.Good authorities are those that are cited by good hubsFigure4:Main subnetwork at level0.007and good hubs cite good authorities.The15highest ranked hubs and authorities are presented in Table2.We see that the main authorities are located in eighties and the main hubs in nineties. Note that,since we are using the relation uRv≡u is cited by v,we have to interchange the roles of hubs and authorities produced by Pajek.An elaboration of the hubs and authorities approach to the analysis of citation networks complemented with visualization can be found in Brandes and Willhalm(2002)[8].7Second Example:US patentsThe network of US patents from1963to1999[21]is an example of very large network (3774768vertices and16522438arcs)that,using some special options in Pajek,can still be analyzed on PC with at least1G memory.The SPC weights are determined in a range of1 minute.This shows that the proposed approach can be used also for very large networks.The obtained main path and CPM path are presented in Figure5.Collecting from the United States Patent and Trademark Ofﬁce[22]the basic data about the patents from both paths,see Table3-6,we see that they deal with’liquid crystal displays’.But,in this network there should be thousands of’themes’.How to identify them?Using the arc weights we can deﬁne a theme as a connected small subnetwork of size in the interval k ..K(for example,between k=1Table3:Patents on the liquid-crystal display patent author(s)and titleMar13,1951Jun29,1954May30,1967May19,1970Jan18,1972May30,1972Jul11,1972Sep19,1972Oct10,1972May8,1973Jun19,1973Oct23,1973Nov20,1973Mar5,1974Mar12,1974Apr23,1974May7,1974Mar18,1975Apr8,1975May6,1975Jun24,1975Mar30,1976May4,1976Jun1,1976Aug17,1976Dec28,1976Mar8,1977Mar22,1977Apr12,1977Table4:Patents on the liquid-crystal display patent author(s)and titleJun14,1977Jun28,1977Mar7,1978Apr4,1978Apr11,1978Sep12,1978Oct3,1978Dec19,1978Apr17,1979May15,1979Apr1,1980Apr15,1980May13,1980Oct21,1980Apr14,1981Sep22,1981Oct6,1981Nov24,1981May18,1982Jul20,1982Sep14,1982Nov2,1982Nov30,1982Jan11,1983May31,1983Jun7,1983Jun7,1983Aug23,1983Nov15,1983Dec6,1983Dec27,1983Jun19,1984Jun26,1984Jul17,1984Sep18,1984Table5:Patents on the liquid-crystal display patent author(s)and titleSep18,1984Oct30,1984Mar5,1985Apr9,1985Apr30,1985Jul2,1985Nov5,1985Dec10,1985Apr22,1986Nov11,1986Dec23,1986Apr14,1987Apr21,1987Sep22,1987Nov3,1987Nov24,1987Dec1,1987Dec15,1987Jan12,1988Jan26,1988Jun21,1988Sep13,1988Jan3,1989Jan10,1989Apr11,1989May23,1989Oct31,1989Sep18,1990May21,1991May21,1991Jun16,1992Jun23,1992Dec15,1992Dec29,1992Table6:Patents on the liquid-crystal display patent author(s)and titleSep7,1993Feb1,1994May3,1994June7,1994Dec20,1994Apr18,1995Jul23,1996Aug6,1996Sep10,1996Nov4,1997Jun23,1998Jan5,1999Nov23,1999Dec21,19992510205010011001000sizef r e qFigure 6:Island size frequency distributionTable8:Some patents from the’foam’island patent author(s)and titleNov29,1977Sep29,1981Nov2,1982Jul10,1984Jan29,1985Oct1,1985Dec22,1987May22,1990Feb26,1991Dec8,1992Feb16,1993May3,1994Sep24,1996Table9:Some patents from’ﬁber optics and bags’island patent author(s)and titleJul24,1984Apr16,1985Jul23,1985May20,1986Jun30,1987Jan12,1988Nov15,1988Nov22,1988Mar7,1989Mar7,1989May9,1989Jan1,1991Mar5,1991Feb23,1993May3,1994Nov15,1994The subnetworks approach onlyﬁlters out the structurally important subnetworks thus pro-viding a researcher with a smaller manageable structures which can be further analyzed using more sophisticated and/or substantial methods.9AcknowledgmentsThe search path count algorithm was developed during my visit in Pittsburgh in1991and pre-sented at the Network seminar[2].It was presented to the broader audience at EASST’94in Budapest[3].In1997it was included in program Pajek[4].The’preprint’transformation was developed as a part of the contribution for the Graph drawing contest2001[5].The al-gorithm for the path length counts was developed in August2002and the Islands algorithm in August2003.The author would like to thank Patrick Doreian and Norm Hummon for introducing him into theﬁeld of citation network analysis,Eugene Garﬁeld for making available the data on real-life networks and providing some relevant references,and Andrej Mrvar and Matjaˇz Zaverˇs nik for implementing the algorithms in Pajek.This work was supported by the Ministry of Education,Science and Sport of Slovenia, Project0512-0101.References[1]Asimov I.:The Genetic Code,New American Library,New York,1963.[2]Batagelj V.:Some Mathematics of Network work Seminar,Department ofSociology,University of Pittsburgh,January21,1991.[3]Batagelj V.:An Efﬁcient Algorithm for Citation Networks Analysis.Paper presented atEASST’94,Budapest,Hungary,August28-31,1994.[4]Batagelj V.,Mrvar A.:Pajek–program for analysis and visualization of large networks.http://vlado.fmf.uni-lj.si/pub/networks/pajek/http://vlado.fmf.uni-lj.si/pub/networks/pajek/howto/extreme.htm [5]Batagelj V.,Mrvar A.:Graph Drawing Contest2001Layoutshttp://vlado.fmf.uni-lj.si/pub/GD/GD01.htm[6]Batagelj V.,Zaverˇs nik M.:Generalized Cores.Submitted,2002./abs/cs.DS/0202039[7]Batagelj V.,Zaverˇs nik M.:Islands–identifying themes in large networks.In preparation,August2003.[8]Brandes U.,Willhalm T.:Visualization of bibliographic networks with a reshaped land-scape metaphor.Joint Eurographics–IEEE TCVG Symposium on Visualization,D.Ebert, P.Brunet,I.Navazo(Editors),2002.http://algo.fmi.uni-passau.de/˜brandes/publications/bw-vbnrl-02.pdf[9]Cormen T.H.,Leiserson C.E.,Rivest R.L.,Stein C.:Introduction to Algorithms,SecondEdition.MIT Press,2001.[10]Garﬁeld E,Sher IH,and Torpie RJ.:The Use of Citation Data in Writing the History ofScience.Philadelphia:The Institute for Scientiﬁc Information,December1964./papers/useofcitdatawritinghistofsci.pdf[11]Garﬁeld E.:From Computational Linguistics to Algorithmic Historiography,paper pre-sented at the Symposium in Honor of Casimir Borkowski at the University of Pittsburgh School of Information Sciences,September19,2001./papers/pittsburgh92001.pdf [12]Garﬁeld E.,Pudovkin A.I.,Istomin,V.S.:Histcomp–(comp iled Hist oriography program)/histcomp/guide.html/histcomp/index.html[13]Garner R.:A computer oriented,graph theoretic analysis of citation index structures.Flood B.(Editor),Three Drexel information science studies,Philadelphia:Drexel Univer-sity Press1967./rgarner.pdf[14]Hummon N.P.,Doreian P.:Connectivity in a Citation Network:The Development of DNATheory.Social Networks,11(1989)39-63.[15]Hummon N.P.,Doreian P.:Computational Methods for Social Network Analysis.SocialNetworks,12(1990)273-288.[16]Hummon N.P.,Doreian P.,Freeman L.C.:Analyzing the Structure of the Centrality-Productivity Literature Created Between1948and1979.Knowledge:Creation,Diffusion, Utilization,11(1990)4,459-480.[17]Kleinberg J.:Authoritative sources in a hyperlinked environment.In Proc9th ACMSIAMSymposium on Discrete Algorithms,1998,p.668-677./home/kleinber/auth.ps/kleinberg97authoritative.html[18]Wilson,R.J.,Watkins,J.J.:Graphs:An Introductory Approach.New York:John Wileyand Sons,1990.[19]Pajek’s datasets–citation networks:http://vlado.fmf.uni-lj.si/pub/networks/data/cite/[20]KDD Cup2003:/projects/kddcup/index.html/[21]Hall,B.H.,Jaffe,A.B.and Tratjenberg M.:The NBER U.S.Patent Citations Data File.NBER Working Paper8498(2001)./patents/[22]The United States Patent and Trademark Ofﬁce./netahtml/srchnum.htm[23]Bibliography on the Self-Organizing Map(SOM)and Learning Vector Quantization(LVQ)a.de/bibliography/Neural/SOM.LVQ.html[24]Neural Networks Research Centre:Bibliography of SOM papers.http://www.cis.hut.fi/research/refs/。

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Waveform Gen.EnlargeHP/Agilent 84904K Programmable Step AttenuatorHP/Agilent 84906K Programmable Step AttenuatorHP/Agilent 346B Noise Source, 10 MHz to 18 GHzHP/Agilent E9325A 50 MHz - 18 GHz peak and averageHP/Agilent 66311B Mobile Communications DC SourceHP/Agilent 87405A Preamplifier, 10 MHz to 3 GHzHP/Agilent 6050A 1800 Watt dc Electronic Load Mainframe HP/Agilent 5351B Frequency Counter 500MHz-26.5GHz HP/Agilent 53131A Universal Frequency Counter, 10 digitHP/Agilent 8495H Programmable Step AttenuatorHP/Agilent 5350B Frequency Counter 500MHz-20GHz HP/Agilent 16191A Side Electrode SMD Test FixtureHP/Agilent 16700B Logic Analysis SystemHP/Agilent 16716A Timing and State ModuleHP/Agilent 1663A Logic Analyzer 34 Channels TESCOM TC-5915A Shield BoxHP/Agilent 34922T Terminal Block for 34922A Multiplexer HP/Agilent 3499B 2-Slot Switch/Control Mainframe Protek Z9216 - High Accuracy, Wide Range LCR Meter HP/Agilent 53181A RF Frequency Counter, 10 digitsHP/Agilent E9301A Power Sensor 10MHz-6GHzPXIT PX2000-337 10G Pulse Pattern GeneratorPXIT PX2000-338 PXI SynthesizerPXI Synthesizer PX2000-338PXI Pulse Pattern Generator PX2000-337Kikusui PAS40-27 Variable-Switching Power SupplyHP/Agilent E8285A CDMA/PCS Mobile Station Test Set Tektronix TDS220 Digitizing SccopeHP/Agilent E2649A USB 2.0 High Speed Fixture SetHP/Agilent E5970A Optical Power MeterHP/Agilent 6543A 200 Watt Power Supply, 35V, 6AHP/Agilent 6542A 200 Watt Power Supply, 20V, 10AHP/Agilent 16500B Logic Analyzer MainframeHP/Agilent 37717B Sonnet Test SetHP/Agilent 83480A Digital Communications AnalyzerHP/Agilent 16750A 68 Channel Logic Analyzer ModuleHP/Agilent N6761A Precision DC Power ModuleHP/Agilent 16085B Terminal AdapterHP/Agilent 8153A Lightwave Multimeter Mainframe JDSU OLP-15B Optical Power MeterHP/Agilent 34932A-34932T Dual 4x16 Mux for 34980A HP/Agilent 6625A Precision System Power SupplyHP/Agilent 34922A 70-Channel Armature Multiplexer Agilent / HP 11612A Bias Network, 45 MHz - 2HP/Agilent 41421B DC Source/Monitor Plug-In100V100mA HP/Agilent 6622A System Power Supply, 80W, 2 outputs HP/Agilent 6623A Precision System Power Supply TESCOM TC-5911A Bluetooth Shield BoxGigatronics 8541C RF Power MeterHP/Agilent 6642A 200 Watt System Power SupplyHP/Agilent 8447E Amplifier, 100 kHz to 1.3 GHzHP/Agilent 54600B 2 Channel 100 MHz OscilloscopeHP/Agilent 54601A 4 Channel 100 MHz OscilloscopeHP/Agilent 54601B 4 Channel 100 MHz OscilloscopeHP 8903E 20 Hz to 100 kHz Distortion AnalyzerHP/Agilent 1153A 200 MHz Differential ProbeAgilent 54645A 100 MHz, 4 Ch Digitizing Oscilloscope HP/Agilent 54601B 100MHz 4CH 20MSa/s Oscilloscope HP/Agilent 8494A Manual Step AttenuatorHP/Agilent 773D Coaxial Directional Coupler, 18 GHzHP/Agilent 6612C 40 Watt System Power Supply, 20V, 2A Kikusui PAS20-36 - DC Sources Power Supplies Gigatronics 8542B Dual-Channel Digital Power MeterHP/Agilent 41425A Analog/Feedback UnitHP/Agilent 16610A Emulation ModuleHP/Agilent 54620A 16 Channel Logic Analyzer Tektronix P6245 Active FET ProbeHP/Agilent 6038A System Autoranging DC Power Supply HP/Agilent 8447D Amplifier, 100 kHz to 1.3 GHzHP/Agilent 8496A Manual Step AttenuatorGigatronics 80601A 200 mW Modulation Power Sensor HP/Agilent 8498A High Power Attenuator, DC to 18 GHz HP/Agilent 8656B Synthesized Signal Generator Gigatronics 8542 Dual-Channel Digital Power MeterHP/Agilent 6632B 100 Watt System Power Supply, 20V, 5AHP/Agilent 8656A Signal Generator, 100 kHz - 990 MHz Agilent 54600B 100 MHz, 2 Ch Digitizing OscilloscopeHP/Agilent 438A Power MeterHP/Agilent 16534A Digitizing Oscilloscope ModuleHP/Agilent 8482A - Power Sensor 100kHz - 4.2GHzHP/Agilent 5086-7678 Dual Directional CouplerHP/Agilent 778DHP/Agilent 6611C 40 Watt System Power Supply, 8V, 5A Advantest R6452A Digital MultimeterHP/Agilent 85132D Semi-Rigid Cable SetHP/Agilent 8904A Multifunction Synthesizer, DC-600 KHz HP/Agilent 8496G Programmable Step AttenuatorHP/Agilent 54201D 300 MHz DIGITIZING OSCILLOSCOPE JDSU OLP-8 Optical Power MeterWeinschel 73-30-33 AttenuatorFluke 45 Digital MultimeterAdvantest R6451A Digital MultimeterAdvantest R6452E Digital MultimeterHP/Agilent 11720A Pulse ModulatorHP/Agilent 1152A 2.5G Active ProbeHP/Agilent 82357B USB/GPIB Interface High-Speed USB 2.0 HP/Agilent 16089C Kelvin IC Clip LeadHP/Agilent 3478A 5.5 Digit DMM with GPIBTESCOM TC-5952B Shield BoxNI PCMCIA-GPIBNarda 769-30 Attenuator 150 Watt DC - 6 GHzHP/Agilent 3324A Synthesized Function/Sweep Generator HP/Agilent 437B 100kHz-110GHz Power Meter Advantest R3964A 3 Port Adapter for R3765CHP/Agilent N2263A 32-Bit Digital Input/Output ModuleHP/Agilent 66332A Dynamic Measurement DC SourceHP/Agilent 6634A GPIB dc power supply, 0-100 Vdc, 0-1 A Aeroflex/Weinschel 49-30-34 High Power Coaxial Attenua Anritsu 2000-768 Precision Open/Short/Load 7/16 dimm(F) HP/Agilent 16048E Test LeadsHP/Agilent 8111A Pulse Generator85052-60006 Short Male 3.5mm85052-60008 Open Male 3.5mmHP/Agilent 5086-7408 Power Divider, DC to 26.5 GHzHP/Agilent 87106-60009 Mulit-port Switch DC to 26.5GHz Anritsu 2000-767 Precision Open/Short/Load 7/16 dimm(M) JDSU OLP-6 Optical Power MeterHP/Agilent 3456A Digital V oltMeter 6.5 DigitsAgilent / HP 35280A Summing Junction Module, DC to MHzHP/Agilent 16048C Test LeadsHP/Agilent 6632A DC Power Supply 20V/5A Precis GPIBAnritsu ICN50 InstaCal CalibrationKrytar 1850 0.5-18.5 GHz DIRECTIONAL COUPLERSHP/Agilent 87104-60001 Multiport Switch SP4T DC-26.5GHzHP/Agilent E3640A 30W Power Supply, 8V, 3A or 20V, 1.5A Tektronix P6204 FET ProbeTektronix TDS3BAT Rechargeable Battery PackTektronix TDS3GM RS/232 GP-IB InterfacesHP/Agilent 11766A DADE SwitchWeinschel 910-20-33 Variable AttenuatorHP/Agilent 11852B AdapterHP/Agilent 82350A PCI High-Performance GPIB InterfaceHP/Agilent 11742A Blocking Capacitor, 0.045 to 26.5 GHzHP/Agilent K422A Detector CrystalHP/Agilent 11716A Attenuator Interconnect Kit, Type-NHP/Agilent N2865A USB host module for 3000 Series ScpesFluke 8842A 5.5 Digit Digital MultimeterHP/Agilent E3614A 48W Power Supply, 8V, 6AHP/Agilent 16510B 80 CHANNEL LOGIC ANAL YZER MODULEHP/Agilent 16530A DIGITIZING OSCILLOSCOPE TIMEBASE CARD HP/Agilent 16531A Digitizing Oscilloscope Card, 100 MHzHP/Agilent 3438A Digital MultimeterHP/Agilent 3465A Digital MultimeterHP/Agilent 16555A 110 MHz State/500 MHz Timing moduleBird Model 43 THRULINE® Directional WattmeterHP/Agilent 54659B RS-232 & Parallel MeasurementHP/Agilent N2757A GPIB Interface Module for 5462XHP/Agilent 54657A GPIB Measurement Storage ModuleHP/Agilent 10073C Passive Probe, 10:1, 500 MHz, 1.5 mHP/Agilent E3616A 60W Power Supply, 35V, 1.7ATektronix P6139A Passive V oltage ProbeHP/Agilent 34905A Dual 4-Channel RF MultiplexerHP/Agilent 8493C Coaxial Fixed Attenuator, DC to 26.5 GInmet 18B10W-20F AttenuatorHP/Agilent 54652B RS-232 and Parallel Interface ModuleHP/Agilent 34907A Multi-function ModuleHP/Agilent 11665B Modulator for scalar analyzerFluke 36 Clamp MeterFluke 36 Clamp MeterHP E3610A 30W Power Supply, 8V, 3A or 15V, 2A Tektronix P6137 Passive V oltage ProbeTektronix P6138A Passive V oltage ProbeHP/Agilent 8493C Coaxial Fixed Attenuator, DC to 26.5 GHP/Agilent 34302A Clamp-on ac/dc Current ProbeHP/Agilent 54652A Parallel I/O module for 54600 SeriesHP/Agilent N2863A Passive Probe, 10:1, 300 MHz, 1.2 m Tektronix 013-0278-00 Video Display ClampHP/Agilent 54650A GPIB Interface ModuleHP/Agilent 8491A Coaxial Fixed Attenuator, 12.4 GHzMini-Circuits 15542 Power SplitterK&L Microwave Tubular Low Pass Filter 6L121-1250/T3300 K&L Microwave Tubular Low Pass Filter 6L121-2000/T6000 K&L Microwave Tubular Low Pass Filter 6L121-3300/T990。

IPC-7351B & PCBL Land Pattern Naming Convention

I P C-7351B N a m i n g C o n v e n t i o n f o r S t a n d a r d S M T L a n d P a t t e r n sSurface Mount Land PatternsComponent, Category Land Pattern Name Ball Grid Array’s...............................BGA + Pin Qty + C or N + Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA w/Dual Pitch.BGA + Pin Qty + C or N + Col Pitch X Row Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA w/Staggered Pins..................BGAS + Pin Qty + C or N + Pitch P + Ball Columns X Ball Rows _ Body Length X Body Width X Height BGA Note: The C or N = Collapsing or Non-collapsing BallsCapacitors, Chip, Array, Concave..........................................................CAPCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Capacitors, Chip, Array, Flat..................................................................CAPCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Capacitors, Chip, Non-polarized.................................................................................................CAPC + Body Length + Body Width X Height Capacitors, Chip, Polarized.....................................................................................................CAPCP + Body Length + Body Width X Height Capacitors, Chip, Wire Rectangle........................................................................................CAPCWR + Body Length + Body Width X Height Capacitors, Molded, Non-polarized...........................................................................................CAPM + Body Length + Body Width X Height Capacitors, Molded, Polarized.................................................................................................CAPMP + Body Length + Body Width X Height Capacitors, Aluminum Electrolytic ............................................................................................................CAPAE + Base Body Size X Height Ceramic Flat Packages.....................................................................................................CFP127P + Lead Span Nominal X Height - Pin Qty Column Grid Array’s.....................................................CGA + Pitch P + Number of Pin Columns X Number of Pin Rows X Height - Pin Qty Crystals (2 leads)........................................................................................................................XTAL + Body Length X Body Width X Height Dual Flat No-lead..........................................................................................................DFN + Body Length X Body Width X Height – Pin Qty Diodes, Chip................................................................................................................................DIOC + Body Length + Body Width X Height Diodes, Molded...........................................................................................................................DIOM + Body Length + Body Width X Height Diodes, MELF................................................................................................................................DIOMELF + Body Length + Body Diameter Fuses, Molded............................................................................................................................FUSM + Body Length + Body Width X Height Inductors, Chip.............................................................................................................................INDC + Body Length + Body Width X Height Inductors, Molded........................................................................................................................INDM + Body Length + Body Width X Height Inductors, Precision Wire Wound................................................................................................INDP + Body Length + Body Width X Height Inductors, Chip, Array, Concave..............................................................INDCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Inductors, Chip, Array, Flat......................................................................INDCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Land Grid Array, Round Lead............................LGA + Pin Qty - Pitch P + Pin Columns X Pin Rows _ Body Length X Body Width X Height Land Grid Array, Square Lead........................LGAS + Pin Qty - Pitch P + Pin Columns X Pin Rows _ Body Length X Body Width X Height LED’s, Molded............................................................................................................................LEDM + Body Length + Body Width X Height Oscillators, Side Concave........................................................................OSCSC + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, J-Lead.......................................................................................OSCJ + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, L-Bend Lead.............................................................................OSCL + Pitch P + Body Length X Body Width X Height - Pin Qty Oscillators, Corner Concave....................................................................................................OSCCC + Body Length X Body Width X Height Plastic Leaded Chip Carriers..................................................PLCC + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Plastic Leaded Chip Carrier Sockets Square.......................PLCCS + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat Packages..................................................................QFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Ceramic Quad Flat Packages.................................................CQFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat No-lead................................................................QFN + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Pull-back Quad Flat No-lead..............................................PQFN + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Quad Leadless Ceramic Chip Carriers..........................................................LCC + Pitch P + Body Width X Body Length X Height - Pin Qty Quad Leadless Ceramic Chip Carriers (Pin 1 on Side)...............................LCCS + Pitch P + Body Width X Body Length X Height - Pin Qty Resistors, Chip...........................................................................................................................RESC + Body Length + Body Width X Height Resistors, Molded......................................................................................................................RESM + Body Length + Body Width X Height Resistors, MELF...........................................................................................................................RESMELF + Body Length + Body Diameter Resistors, Chip, Array, Concave............................................................RESCAV + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Convex, E-Version (Even Pin Size)...............RESCAXE + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Convex, S-Version (Side Pins Diff)................RESCAXS + Pitch P + Body Length X Body Width X Height - Pin Qty Resistors, Chip, Array, Flat.....................................................................RESCAF + Pitch P + Body Length X Body Width X Height - Pin Qty Small Outline Diodes, Flat Lead...................................................................................SODFL + Lead Span Nominal + Body Width X Height Small Outline IC, J-Leaded........................................................................................SOJ + Pitch P +Lead Span Nominal X Height - Pin Qty Small Outline Integrated Circuit, (50 mil Pitch SOIC)......................................................SOIC127P +Lead Span Nominal X Height - Pin Qty Small Outline Packages............................................................................................SOP + Pitch P +Lead Span Nominal X Height - Pin Qty Small Outline No-lead...........................................................SON + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Pull-back Small Outline No-lead.........................................PSON + Pitch P + Body Width X Body Length X Height - Pin Qty + Thermal Pad Small Outline Transistors, Flat Lead....................................................................SOTFL + Pitch P + Lead Span Nominal X Height - Pin Qty SOD (Example: SOD3717X135 = JEDEC SOD123)........................................................SOD + Lead Span Nominal + Body Width X Height SOT89 (JEDEC Standard Package).......................................................................................................................................................SOT89 SOT143 & SOT343 (JEDEC Standard Package)..............................................................................................................SOT143 & SOT343 SOT143 & SOT343 Reverse (JEDEC Standard Package)...........................................................................................SOT143R & SOT343R SOT23 & SOT223 Packages (Example: SOT230P700X180-4)...............................SOT + Pitch P + Lead Span Nominal X Height - Pin Qty TO (Generic DPAK - Example: TO228P970X238-3).................................................................TO + Pitch P + Lead Span X Height - Pin QtyI P C-7351B L a n d P a t t e r n N a m i n g C o n v e n t i o n N o t e s•All dimensions are in Metric Units•All Lead Span and Height numbers go two places past the decimal point and “include” trailing Zeros•All Lead Span and Body Sizes go two place before the decimal point and “remove” leading Zeros•All Chip Component Body Sizes are one place to each side of the decimal point•Pitch Values are two places to the right & left of decimal point with no leading Zeros but include trailing zeros N a m i n g C o n v e n t i o n S p e c i a l C h a r a c t e r U s e f o r L a n d P a t t e r n sThe _ (underscore) is the separator between pin Qty in Hidden & Deleted pin componentsThe – (dash) is used to separate the pin qty.The X (capital letter X) is used instead of the word “by” to separate two numbers such as height X width like “Quad Packages”.P C B L i b r a r i e s S u f f i x N a m i n g C o n v e n t i o n f o r L a n d P a t t e r n sCommon SMT Land Pattern to Describe Environment Use (This is the last character in every name)Note: This excludes the BGA component family as they only come in the Nominal Environment Condition •M.................Most Material Condition (Level A)•N..................Nominal Material Condition (Level B)•L.................Least Material Condition (Level C)Alternate Components that do not follow the JEDEC, EIA or IEC Standard•A..................Alternate Component (used primarily for SOP & QFP when Component Tolerance or Height is different) •B..................Second Alternate ComponentReverse Pin Order•-20RN..........20 pin part, Reverse Pin Order, Nominal EnvironmentHidden Pins•-20_24N......20 pin part in a 24 pin package. The pins are numbered 1 – 24 the hidden pins are skipped. The schematic symbol displays up to 24 pins.Deleted Pins•-24_20N......20 pin part in a 24 pin package. The pins are numbered 1 – 20. The schematic symbol displays 20 pins. JEDEC and EIA Standard parts that have several alternate packages•AA, AB, AC.JEDEC or EIA Component IdentifierGENERAL SUFFIXES_HS.........................HS = Land Pattern with Heat Sink attachment requiring additional holes or padsExample: TO254P1055X160_HS-6N_BEC......................BEC = Base, Emitter and Collector (Pin assignments used for three pin Transistors)Example: SOT95P280X160_BEC-3N_SGD......................SGD = Source, Gate and Drain (Pin assignments used for three pin Transistors)Example: SOT95P280X160_SGD-3N_213........................213 = Alternate pin assignments used for three pin TransistorsExample: SOT95P280X160_213-3NP C B L i b r a r i e s N a m i n g C o n v e n t i o n f o r N o n-S t a n d a r d S M T L a n d P a t t e r n s Surface Mount Land PatternsComponent, Category Land Pattern Name Amplifiers....................................................................................................................................................AMP_ Mfr.’s Part Number Batteries......................................................................................................................................................BAT_ Mfr.’s Part Number Capacitors, Variable..................................................................................................................................CAPV_Mfr.’s Part Number Capacitors, Chip, Array, Concave (Pins on 2 or 4 sides)..............................................................CAPCAV_Mfr Series No. - Pin Qty Capacitors, Chip, Array, Flat (Pins on 2 sides)..............................................................................CAPCAF_Mfr Series No. - Pin Qty Capacitors, Miscellaneous............................................................................................................................CAP_Mfr.’s Part Number Crystals......................................................................................................................................................XTAL_Mfr.’s Part Number Diodes, Miscellaneous...................................................................................................................................DIO_Mfr.’s Part Number Diodes, Bridge Rectifiers............................................................................................................................DIOB_Mfr.’s Part Number Ferrite Beads..................................................................................................................................................FB_Mfr.’s Part Number Fiducials......................................................................................................................................FID + Pad Size X Solder Mask Size Filters..............................................................................................................................................................FIL_Mfr.’s Part Number Fuses..........................................................................................................................................................FUSE_Mfr.’s Part Number Fuse, Resettable.....................................................................................................................................FUSER_Mfr.’s Part Number Inductors, Miscellaneous...............................................................................................................................IND_Mfr.’s Part Number Inductors, Chip, Array, Concave (Pins on 2 or 4 sides)..................................................................INDCAV_Mfr Series No. - Pin Qty Inductors, Chip, Array, Flat (Pins on 2 sides).................................................................................INDCAF_Mfr Series No. - Pin Qty Keypad.................................................................................................................................................KEYPAD_Mfr.’s Part Number LEDS............................................................................................................................................................LED_Mfr.’s Part Number LEDS, Chip...................................................................................................................................................LED_Mfr.’s Part Number Liquid Crystal Display...................................................................................................................................LCD_Mfr.’s Part Number Microphones..................................................................................................................................................MIC_Mfr.’s Part Number Opto Isolators............................................................................................................................................OPTO_Mfr.’s Part Number Oscillators......................................................................................................................................OSC_Mfr.’s Part Number - Pin Qty Quad Flat Packages w/Bumper Corners, Pin 1 Side.............BQFP + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Quad Flat Packages w/Bumper Corners, 1 Center..............BQFPC + Pitch P + Lead Span L1 X Lead Span L2 Nominal X Height - Pin Qty Resistors, Chip, Array, Concave (Pins on 2 or 4 sides).................................................................RESCAV_Mfr Series No. - Pin Qty Resistors, Chip, Array, Convex Type E (Pins on 2 sides)...........................................................RESCAXE_Mfr Series No. - Pin Qty Resistors, Chip, Array, Convex Type S (Pins on 2 sides)...........................................................RESCAXS_Mfr Series No. - Pin Qty Resistors, Chip, Array, Flat (Pins on 2 sides)................................................................................RESCAF_Mfr Series No. - Pin Qty Relays.....................................................................................................................................................RELAY_Mfr.’s Part Number Speakers....................................................................................................................................................SPKR_Mfr’s Part Number Switches........................................................................................................................................................SW_Mfr.’s Part Number Test Points, Round......................TP + Pad Size (1 place left of decimal and 2 places right of decimal, Example TP100 = 1.00mm) Test Points, Square...............................................................TPS + Pad Size (1 place left of decimal and 2 places right of decimal) Test Points, Rectangle....................................TP + Pad Length X Pad Width (1 place left of decimal and 2 places right of decimal) Thermistors.............................................................................................................................................THERM_Mfr.’s Part Number Transceivers.............................................................................................................................................XCVR_ Mfr.’s Part Number Transducers (IRDA’s)................................................................................................................................XDCR_Mfr.’s Part Number Transient Voltage S_Mfr.’s Part Number Transient Voltage Suppressors, SP_Mfr.’s Part Number Transistor Outlines, Custom....................................................................................................................TRANS_Mfr.’s Part Number Transformers.............................................................................................................................................XFMR_Mfr.’s Part Number Trimmers & Potentiometers........................................................................................................................TRIM_Mfr.’s Part Number Tuners.....................................................................................................................................................TUNER_Mfr.’s Part Number Varistors.......................................................................................................................................................VAR_Mfr.’s Part Number Voltage Controlled Oscillators.....................................................................................................................VCO_Mfr.’s Part Number Voltage Regulators, Custom......................................................................................................................VREG_Mfr.’s Part NumberI P C-7251N a m i n g C o n v e n t i o n f o r T h r o u g h-H o l e L a n d P a t t e r n sThe land pattern naming convention uses component dimensions to derive the land pattern name.The first 3 – 6 characters in the land pattern name describe the component family.The first number in the land pattern name refers to the Lead Spacing or hole to hole location to insert the component lead.All numbers that follow the Lead Spacing are component dimensions.These characters are used as component body identifiers that precede the value and this is the priority order of the component body identifiers –P = Pitch for components with more than two leadsW = Maximum Lead Width (or Component Lead Diameter)L = Body Length for horizontal mountingD = Body Diameter for round component bodyT = Body Thickness for rectangular component bodyH = Height for vertically mounted componentsQ = Pin Quantity for components with more than two leadsR = Number of Rows for connectorsA, B & C = the fabrication complexity level as defined in the IPC-2221 and IPC-2222Notes:All component body values are in millimeters and go two places to the right of the decimal point and no leading zeros.All Complexity Levels used in the examples are “B”.Component, Category Land Pattern Name Capacitors, Non Polarized Axial Diameter Horizontal Mounting.........CAPAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPAD800W52L600D150BCapacitors, Non Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Capacitors, Non Polarized Axial Rectangular.........CAPAR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPAR800W52L600T50H70BCapacitors, Non Polarized Axial; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70Capacitors, Non Polarized Axial Diameter Vertical Mounting .........CAPADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPADV300W52L600D150BCapacitors, Non Polarized Axial; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50mmCapacitors, Non Polarized Axial Rect. Vert. Mtg.CAPARV + Lead Spacing + W Lead Width + L Body Length + T Body Thickness + H Body Height Example: CAPARV300W52L600T50H70BCapacitors, Non Polarized Axial Rect. Vertical; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70 Capacitors, Non Polarized Radial Diameter.......................................CAPRD + Lead Spacing + W Lead Width + D Body Diameter + H Body Height Example: CAPRD200W52D300H550BCapacitors, Non Polarized Radial Diameter; lead spacing 2.00; lead width 0.52; Body Diameter 3.00; Height 5.50Capacitors, Non Polarized Radial Rectangular.......CAPRR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPRR200W52L50T70H550BCapacitors, Non Polarized Radial Rectangular; lead spacing 2.00; lead width 0.52; Body Length 0.50; Body thickness 0.70; Height 5.50 Capacitors, Non Polarized Radial Disk Button........CAPRB + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: CAPRB200W52L50T70H550BCapacitors, Non Polarized Radial Rectangular; lead spacing 2.00; lead width 0.52; Body Length 0.50; Body thickness 0.70; Height 5.50 Capacitors, Polarized Axial Diameter Horizontal Mounting................CAPPA + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: CAPPAD800W52L600D150BCapacitors, Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Capacitor, Polarized Radial Diameter.................................................CAPPR + Lead Spacing + W Lead Width + D Body Diameter + H Body Height Example: CAPPRD200W52D300H550BCapacitors, Polarized Radial Diameter; lead spacing 2.00; lead width 0.52; Body Diameter 3.00; Height 5.50Diodes, Axial Diameter Horizontal Mounting.......................................DIOAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: DIOAD800W52L600D150BCapacitors, Non Polarized Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Diodes, Axial Diameter Vertical Mounting .........................................DIOADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: DIOADV300W52L600D150BCapacitors, Non Polarized Axial; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Dual-In-Line Packages...................................DIP + Lead Span + W Lead Width + P Pin Pitch + L Body Length + H Component Height + Q Pin Qty Example: DIP762W52P254L1905H508Q14BDual-In-Line Package: Lead Span 7.62; Lead Width 0.52; Pin Pitch 2.54; Body Length 19.05; Body Height 5.08; Pin Qty 14Component, Category Land Pattern Name Dual-In-Line Sockets....................................DIPS + Lead Span + W Lead Width + P Pin Pitch + L Body Length + H Component Height + Q Pin Qty Example: DIPS762W52P254L1905H508Q14BDual-In-Line Package Socket: Lead Span 7.62; Lead Width 0.52; Pin Pitch 2.54; Body Length 19.05; Body Height 5.08; Pin Qty 14Headers, Vertical....... HDRV + Lead Span + W Lead Width + P Pin Pitch + R Pins per Row + L Body Length + T Body Thickness + H Component HeightExample: HDRV200W52P200R2L4400T400H900BHeader, Vertical: Lead Span 2.00; Lead Width 0.52; Pin Pitch 2.00; 2 Rows; Body Length 44.00; Body Thickness 4.00; Body Height 9.00 Headers, Right Angle...............HDRRA + Lead Span + W Lead Width + P Pin Pitch + R Pins per Row + L Body Length + T Body Thickness + H Component HeightExample: HDRRA200W52P200R2L4400T400H900BHeader, Vertical: Lead Span 2.00; Lead Width 0.52; Pin Pitch 2.00; 2 Rows; Body Length 44.00; Body Thickness 4.00; Body Height 9.00 Inductors, Axial Diameter Horizontal Mounting....................................INDAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: INDAD800W52L600D150BInductors, Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Inductors, Axial Diameter Vertical Mounting .....................................INDADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: INDADV300W52L600D150BInductors, Axial Diameter Vertical Mounting; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Jumpers, Wire...................................................................................................................................................JUMP + Lead Spacing + W Lead Width Example: JUMP500W52BJumper; Lead Spacing 5.00; Lead Width 0.52Mounting Holes Plated With Support Pad..........................................................................MTGP + Pad Size + H Hole Size + Z Inner Layer Pad Size Example: MTGP700H400Z520This is a Mounting hole for a #6-32 screw using a circular 7.00 land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter.Mounting Holes Non-Plated With Support Pad................................................................MTGNP + Pad Size + H Hole Size + Z Inner Layer Pad Size Example: MTGNP700H400Z520This is a Mounting hole for a #6-32 screw using a circular 7.00 land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter.Mounting Holes Non-Plated Without Support Pad.....................MTGNP + Pad Size + H Hole Size + Z Inner Layer Pad Size + K Keep-out Diameter Example: MTGNP100H400Z520K700This is a Mounting hole for a #6-32 screw using a circular 1mm land on the primary and secondary side of the board, a 4.00 diameter hole with the internal lands are smaller that the external and are also circular 5.20 in diameter and a 7.00 diameter keep-out.Mounting Holes Plated with 8 Vias .....................................................................MTGP + Pad Size + H Hole Size + Z Inner Layer Pad Size + 8 Vias Example: MTGP700H400Z520V8This is a Mounting hole for a #6-32 screw using a circular 7mm land on the primary and secondary side of the board, a 4mm diameter hole with the internal lands are smaller that the external and are also circular 5.2mm in diameter, with 8 vias.Pin Grid Array’s.............................PGA + Pin Qty + P Pitch + C Pin Columns + R Pin Rows + L Body Length X Body Width + H Component Height Example: PGA84P254C10R10L2500X2500H300BPin Grid Array: Pin Qty 84; Pin Pitch 2.54; Columns 10; Rows 10; Body Length 25.00 X 25.00; Component Height 3.00Resistors, Axial Diameter Horizontal Mounting...................................RESAD + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: RESAD800W52L600D150BResistors, Axial Diameter; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Resistors, Axial Diameter Vertical Mounting ....................................RESADV + Lead Spacing + W Lead Width + L Body Length + D Body Diameter Example: RESADV300W52L600D150BResistors, Axial Diameter Vertical Mounting; Lead Spacing 3.00; Lead Width 0.52; Body Length 6.00; Body Diameter 1.50Resistors, Axial Rectangular Horizontal Mounting...RESAR + Lead Spacing + W Lead Width + L Body Length + T Body thickness + H Body Height Example: RESAR800W52L600T50H70BResistors, Axial Rectangular; Lead Spacing 8.00; Lead Width 0.52; Body Length 6.00; Body Thickness 0.50; Body Height 0.70Test Points, Round Land......................................................................................................................................................................TP + Lead Width Example: TP52Test Points, Square Land..................................................................................................................................................................TPS + Lead Width Example: TPS52Test Points, Top Land Round & Bottom Land Square.....................................................................................................................TPRS + Lead Width Example: TPRS52 Wire....................................................................................................................................................................................................PAD + Wire Width Example: PAD52。

Flipchip工艺流程

Bump Substrate
Kingbond Training Course
SBB Process
IC
IC
Stud Bump
Substrate
Flip Chip Bond
Cure oven
IC
Cure oven
Substrate
Underfill
Kingbond Training Course
C4: Controlled Collapse Chip Connection Process
Silicon Wafer arrives with an aluminum based final metal pad and die passivation. Wafer can be probed prior to bumping.
Kingbond Training Course
Wafer Bump (Printed method) Process: Sputter UBM
IC
Solder
Bump
Substrate
GGI (Gold to Gold interconnection)
IC
Au Bump
Substrate
Au Electrode
ACF/ACP (Anisotropic Conductive Film/Paste)
IC
Anisotropic
conductive
Etch to form UBM cap
Kingbond Training Course
Wafer Bump (Printed method) Process: Print solder paste & reflow

常用有机溶剂共沸点

之马矢奏春创作乙醚的性质℃、凝固点－116℃，所以能耐剧冷而不凝冻。

比重很轻，在15℃时为0.720。

微溶于水，能溶于乙醇、苯、氯仿等有机溶剂中。

经常使用有机溶剂共沸点溶剂沸点/℃共沸点/℃含水量/%氯仿 61.2 56.1 2.5甲苯110.5 85.0 20 四氯化碳 77.0 66.0 4.0苯 80.4 69.2 8.8丙稀腈 78.0 70.0 13.0二氯乙烷 83.7 72.0 19.5乙睛 82.0 76.0 16.0吡啶115.5 94.0 42 乙醇 78.3 78.1 4.4乙酸乙酯 77.1 70.4 8.0异丙醇 82.4 80.4 12.1乙醚 35 34 1.0甲酸 101 107 26溶剂 mp bp D420 nD20 Acetic acid 乙酸17 118 1.049 1.3716 6 .15 12.9 1.68 Acetone 丙酮-95 56 0.788 1.3587 20 .7 16.2 2.85 Acetonitrile 乙腈-44 82 0.782 1.3441 37 .5 11.1 3.45 Anisole 苯甲醚-3 154 0.994 1.5170 4.33 33 1.38 Benzene苯 5 80 0.879 1.50112.27 26.2 0.00 Bromobenzene 溴苯-31 156 1.495 1.5580 5 .17 33.7 1.55 Carbon disulfide 二硫化碳-112 46 1.274 1.6295 2 .6 21.3 0.00 Carbon tetrachloride 四氯化碳-23 77 1.594 1.4601 2.24 25.8 0.00 Chlorobenzene 氯苯-46 132 1.106 1.5248 5 .62 31.2 1.54 Chloroform 氯仿-64 61 1.489 1.4458 4.81 21 1.15 Cyclohexane 环己烷6 81 0.778 1.4262 2.0 2 27.7 0.00 Dibutyl ether 丁醚-98 142 0.769 1.3992 3 .1 40.8 1.18 o –Dichlorobenzene 邻二氯苯-17 181 1.306 1.5514 9 .93 35.9 2.27 1,2-Dichloroethane 1，2-二氯乙烷-36 84 1.253 1.4448 10 .36 21 1.86 Dichloromethane 二氯乙烷-95 40 1.326 1.4241 8.93 16 1.55 Diethylamine 二乙胺-50 56 0.707 1.3864 3.6 24.3 0.92Diethyl ether 乙醚-117 35 0.713 1.3524 4 .33 22.1 1.30 1,2-Dimethoxyethane 1，2-二甲氧基乙烷-68 85 0.863 1.3796 7.2 24.1 1.71 N,N –Dimethylacetamide N，N-二甲基乙酰胺-20 166 0.937 1.4384 3 7.8 24.2 3.72 N,N –Dimethylformamide N，N-二甲基甲酰胺-60 152 0.945 1.4305 3 6.7 19.9 3.86 Dimethyl sulfoxide二甲基亚砜19 189 1.096 1.4783 4 6.7 20.1 3.90 1,4-Dioxane 1，4-二氧六环12 101 1.034 1.4224 2Ethanol 乙醇-114 78 0.789 1.3614 2 4.5 12.8 1.69 Ethyl acetate 乙酸乙酯-84 77 0.901 1.3724 6.02 22.3 1.88 Ethyl benzoate 苯甲酸乙酯-35 213 1.050 1.5052 6 .02 42.5 2.00 Formamide 甲酰胺3 211 1.133 1.4475 11 1.0 10.6 3.37 Hexamethylphosphoramide7 235 1.027 1.4588 30 .0 47.7 5.54 Isopropyl alcohol 异丙醇-90 82 0.786 1.3772 17isopropyl ether 异丙醚-60 68 1.36Methanol 甲醇-98 65 0.791 1.3284 32 .7 8.2 1.70 2-Methyl-2-propanol 2-甲基-2-丙醇26 82 0.786 1.3877 10 .9 22.2 1.66 Nitrobenzene 硝基苯6 211 1.204 1.5562 34 .82 32.7 4.02 Nitromethane 硝基甲烷-28 101 1.137 1.3817 3 5.87 12.5 3.54 Pyridine 吡啶-42 115 0.983 1.5102 1 2.4 24.1 2.37 tert-butyl alcohol叔丁醇25.5 82.5 1.3878Tetrahydrofuran 四氢呋喃-109 66 0.888 1.4072 7 .58 19.9 1.75 Toluene 甲苯-95 111 0.867 1.4969 2 .38 31.1 0.43 Trichloroethylene 三氯乙烯-86 87 1.465 1.4767 3.4 25.5 0.81 Triethylamine 三乙胺-115 90 0.726 1.4010 2 .42 33.1 0.87 Trifluoroacetic acid 三氟乙酸-15 72 1.489 1.2850 8.55 13.7 2.262,2,2-Trifluoroethanol 2，2，2-三氟乙醇-44 77 1.384 1.2910 8.55 12.4 2.52 Water 水0 100 0.998 1.3330 80 .1 3.7 1.82 o -Xylene 邻二甲苯Common Organic Solvents: Table of Properties1,2,3acetic acid C2H4O260.05 118 16.6 1.049 Miscible 6.15 39acetone C3H6O 58.08 56.2 -94.3 0.786 Miscible 20.7(25) -18acetonitrile C2H3N 41.05 81.6 -46 0.786 Miscible 37.5 6benzene C6H678.11 80.1 5.5 0.879 0.18 2.28 -111-butanol C4H10O 74.12 117.6 -89.5 0.81 6.3 17.8 352-butanol C4H10O 74.12 98 -115 0.808 15 15.8(25) 262-butanone C4H8O 72.11 79.6 -86.3 0.805 25.6 18.5 -7t-butyl alcohol C4H10O 74.12 82.2 25.5 0.786 Miscible 12.5 11carbon tetrachloride CCl4153.82 76.7 -22.4 1.594 0.08 2.24 --chlorobenzene C6H5Cl 112.56 131.7 -45.6 1.1066 0.05 2.71 29chloroform CHCl3119.38 61.7 -63.7 1.498 0.795 4.81 --cyclohexane C6H1284.16 80.7 6.6 0.779 <0.1 2.02 -201,2-dichloroethane C2H4Cl298.96 83.5 -35.3 1.245 0.861 10.42 13diethyl ether C 4H 10O 74.12 34.6 -116.3 0.713 7.5 4.34 -45 diethylene glycol C 4H 10O 3 106.12 245 -10 1.1181031.7 143 diglyme (diethylene glycoldimethyl ether) C 6H 14O 3 134.17 162-680.943 Miscible7.23671,2-dimethoxy-ethane (glyme, DME) C 4H 10O 2 90.12 85 -58 0.868 Miscible 7.2 -6 dimethylether C 2H 6O 46.07 -22 -138.5 NANANA -41 dimethyl-formamide (DMF) C 3H 7NO 73.09 153 -610.944 Miscible36.7 58 dimethyl sulfoxide (DMSO) C 2H 6OS 78.13 189 18.4 1.09225.34795dioxane C 4H 8O 288.11 101.1 11.8 1.033 Miscible 2.21(25) 12ethanol C 2H 6O 46.07 78.5 -114.1 0.789 Miscible 24.6 13 ethyl acetate C 4H 8O 2 88.1177-83.6 0.895 8.76(25) -4 ethylene glycol C 2H 6O 2 62.07 195 -131.115 Miscible37.7 111 glycerin C 3H 8O 3 92.09 290 17.8 1.261 Miscible 42.5 160 heptaneC 7H 16100.20 98-90.6 0.684 0.011.92 -4 Hexamethylphosphoramide(HMPA)C 6H 18N 3OP 179.20 232.57.2 1.03 Miscible 31.3 105 Hexamethylphosphorous triamide (HMPT) C 6H 18N 3P 163.20 150 -44 0.898 Miscible ?? 26 hexane C 6H 14 86.1869-95 0.6590.0141.89-22methanol CH 4O32.04 64.6 -980.791 Miscible 32.6(25) 12methyl t-butyl ether (MTBE) C 5H 12O 88.15 55.2 -109 0.7415.1 ?? -28 methylene chlorideCH 2Cl 2 84.93 39.8 -96.7 1.326 1.32 9.08 1.6nitromethane CH 3NO 2 61.04 101.2-291.3829.50 35.9 35 pentane C 5H 12 72.15 36.1 -129.7 0.626 0.04 1.84 -49 Petroleum ether (ligroine) ----30-60 -400.656-----301-propanol C 3H 8O 88.15 97-126 0.803 Miscible 20.1(25) 152-propanol C 3H 8O 88.15 82.4 -88.5 0.785 Miscible 18.3(25) 12 pyridineC 5H 5N 79.10 115.2 -41.6 0.982 Miscible 12.3(25) 17 tetrahydrofuran (THF) C 4H 8O 72.11 66-108.4 0.886 30 7.6 -21 toluene C 7H 892.14 110.6-930.8670.05 2.38(25) 4 triethyl amine C 6H 15N 101.19 88.9 -114.7 0.728 0.02 2.4 -11 water H 2O 18.02 100.00 0.00 0.998 --78.54-- water, heavyD 2O 20.03 101.3 41.107 Miscible?? -- o -xylene C 8H 10 106.17 144-25.2 0.897 Insoluble2.57 32 m -xylene C 8H 10 106.17 139.1 -47.8 0.868 Insoluble 2.37 27。

Agilent QQQ 原理

600
-2500
-3000 -3500 -4000 -4500 -1 0 1 2 3 4 5 6 7 8 9 10
Voltage (VDC) Pressure (Torr)
100
0
Location (d)
离子光学组件 Skimmer, 八级杆, Lens1 & 2
Purpose:进一步除去溶剂和中性分子，高效的离子传输组件，并聚焦随机运动的离子进入四极杆。 Mechanism: DC电压及RF电压
AN-CE-LCMS-2-082/-083 Revision: 10 July 2015
串联四级杆扫描方式
1. MS2 Scan
TTI
No CID
Scan
离子源离子光学组件四级杆1 碰撞池
四级杆2
检测器
串联四级杆扫描方式
2. MS2 SIM
TTI
No CID
SIM
离子源离子光学组件四级杆1 碰撞池
选择离子监测仅记录选定质核比的离子强度串联四级杆扫描方式ms2scantti四级杆1四级杆2碰撞池离子源离子光学组件检测器scancid串联四级杆扫描方式ms2simtti四级杆1四级杆2碰撞池离子源离子光学组件检测器simcid串联四级杆扫描方式productionscan产物离子扫描子离子扫描sim四级杆1四级杆2碰撞池离子源离子光学组件检测器scancid串联四级杆扫描方式mrm多反应监测sim四级杆1四级杆2碰撞池离子源离子光学组件检测器simcid串联四级杆扫描方式precursorionscan前级离子扫描母离子扫描neutrallossneutralgain单四级杆工作模式sim串联四级杆工作模式mrmmrm方法开发purpose

梅特勒电极

说明
12100938WP 51302256 51302255 51302119 51340260 51302257 51302329 51340277 51340278
LE 701/IP65 四环电导电极/防水接头,(70us/cm-199.9mS/cm, 0-60℃)仅用于旧版 LC116 InLab 710 电极(10uS/cm-500mS/cm,0-100℃) ,玻璃材质,适合电导率较高的有机溶液及水溶液的测量 InLab 720 电极(0-500uS/cm,0-100℃),需配 84uS/cm 标准液 (51302153),玻璃材质,适合纯水及低电导率有机溶液的测量 InLab 730 电极(10uS/cm-1000mS/cm,0-100℃) ,环氧树脂材质,适合电导率较高的水溶液的测量 InLab 740 超纯水电导率电极(0.001-500uS/cm,0-70℃),PVC/ 不锈钢材质,适用于纯水及超纯水电导率的测量流通池(与 InLab740 电极连用,测量超纯水电导) MiniDin 转接口(用于 SG3,SG7 连接 InLab710/720/740 电极) InLab737 IP67 电导率电极(50μS/cm-1000mS/cm,-5-100℃),LTW7 接口,仅用于 SG3 和 SG7 InLab737/10m IP67 电导率电极, (50μS/cm-1000mS/cm,-5-100℃),LTW7 接口,仅用于 SG3 和 SG7 InLab740 SG IP67 超纯水电导率电极(0.001-500uS/cm,0-70℃), PVC/ 不锈钢材质,适用于纯水及超纯水电导率的测量,LTW7 接口, 仅用于 SG3 和 SG7 InLab605 IP67 溶解氧电极,(0~200%,0~20mg/L,0~60℃), 仅用于 SG6 InLab605/10m IP67 溶解氧电极,(0~200%,0~20mg/L,0~60℃), 仅用于 SG6 InLab605 膜组件,含 3 个膜,25mL 电解液 InLab605 电解液,25mL

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腾讯1.43亿美元收购西山居9.9%股权
作者：米太平
来源：《财会信报》2017年第17期
本报讯近日，金山软件宣布，已经与腾讯、西山居及相关股东订立购股协议。

除金山软件将向腾讯出售约3 981.95万股、占比4.34%的西山居股份外，其他3个股东也将手中持有的5.56%的西山居股份转让给腾讯。

此次交易总金额为1.43亿美元；交易完成后，腾讯合计持有西山居9.9%的股份，而金山软件的持股比例将从71.99%减少至67.65%。

“此次合作从去年10月开始谈起，速度已经算是很快了。

”金山软件CEO兼西山居CEO 邹涛透露，此次股权交易中腾讯对西山居估值15亿美元。

有知情人士表示，西山居这个体量的公司主要按利润估值。

“西山居去年利润额达到10亿元人民币，按15亿美元估值计算，PE（市盈率）在10倍左右，远低于国内资本市场。

相比之下，三七互娱、掌趣科技等国内上市游戏公司均在40倍以上。

”
从单款游戏来说，剑侠情缘是2016年“端（游）转手（游）”表现最好的大IP之一。

金山软件财报显示，《剑侠情缘》手游版自去年6月份上线后，首月营收达5.2亿元，且连续10个月在iOS畅销榜占据前十。

同时，在4月20日举办的UP2017腾讯互娱年度发布会上，腾讯方面还宣布了《剑网3之指尖江湖》手游版即将上市。

据悉，在2016年端游低迷的环境下，《剑网3》2016年全年流水达13亿元，还增长了56%。

“相比于其他老端游厂商，西山居最大的优势是团队稳定性很强。

”上述知情人士告诉记者，至今为止，西山居剑侠系列游戏的核心研发人员都是10多年的老金山人。

“企业做游戏，最重要的就是这种研发稳定性。

”
根据金山软件公告，西山居与腾讯拟于交易完成同日或之前订立合作协议，此亦为腾讯购股协议的先决条件。

根据业务合作协议，倘西山居决定不自行发行和运营自有新游戏，则腾讯对于该等游戏的简体中文版在中国大陆地区的发行和运营享有独家优先合作权；倘西山居拟向任何外部第三方出售与其自有游戏有关的若干知识产权，则腾讯在同等条件下有优先购买权。

有业内专家认为，此次腾讯联手西山居无疑是针对网易，这与6年前腾讯入股金山软件以对抗奇虎360如出一辙。

当时，金山软件创始人求伯君、张璇龙作价8.92亿港元转让金山软件合计15.68%的股权给腾讯，同时腾讯亦通过战略投资支持金山软件旗下子公司金山互联网安全公司（即后来的猎豹移动）。

“‘3Q’大战中，腾讯虽然占据着入口，但并没有相关的安全软件，金山则补齐了这块短板。

这次腾讯入股西山居同样出于这个考虑。

腾讯拥有国内最强的流量资源，但研发能力一直不如网易。

西山居作为中国资历最深的CP（游戏内容提供商），对腾讯的意义非凡。

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邹涛也认为，未来，西山居可以充分利用腾讯的资源优势，继续扩充核心用户，提高市场份额；腾讯也可以通过西山居的优质自研产品，提升市场竞争力。