TIP120G;TIP121G;TIP122G;TIP126G;TIP120;中文规格书,Datasheet资料
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Plastic Medium-Power Complementary Silicon Transistors
Designed for general−purpose amplifier and low−speed switching applications.
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
PD, POWER DISSIPATION (WATTS)
3.0 60 2.0 40 1.0 20
TC TA
00 0 Leabharlann Baidu0 40 60 80 100 120 140 160 T, TEMPERATURE (°C)
RC TUT
SCOPE
V2 approx
RB
+ 8.0 V
0
51
D1
≈ 8.0 k ≈ 120
V1 approx
-12 V
25 ms
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127
© Semiconductor Components Industries, LLC, 2011
1
September, 2011 − Rev. 8
http://oneic.com/
Publication Order Number: TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
TIP122 TIP122G
TIP125 TIP125G
TIP126 TIP126G
TIP127 TIP127G
TA TC 4.0 80
Package
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
− Peak
VCEO VCB VEB IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
5.0
Adc
8.0
Base Current
Total Power Dissipation @ TC = 25°C Derate above 25°C
IB
120
mAdc
PD
65
W
0.52
W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICEO
mAdc
−
0.5
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg Symbol
BASE COLLECTOR EMITTER COLLECTOR
TIP12xG AYWW
TIP12x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg:
VCC - 30 V
1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
Figure 3. Switching Times Test Circuit
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 120
≈ 8.0 k ≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION Device
TIP120 TIP120G
TIP121 TIP121G
VBE(on)
−
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
−
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available*
−
0.5
−
0.5
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICBO
mAdc
http://onsemi.com
DARLINGTON 5 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
MARKING DIAGRAM
1 2 3
4
TO−220AB CASE 221A
STYLE 1
STYLE 1: PIN 1. 2. 3. 4.
– 65 to + 150 Max
°C Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
60
−
TIP121, TIP126
80
−
TIP122, TIP127
Cob
TIP120, TIP121, TIP122
−
300
pF
−
200
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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http://onsemi.com 2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
Shipping 50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122,
Symbol
TIP125 TIP126 TIP127
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)
IEBO hFE VCE(sat)
−
2.0
1000
−
1000
−
−
2.0
−
4.0
mAdc −
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
−
0.2
−
0.2
−
0.2
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc)
Figure 2. Power Derating
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http://onsemi.com 3
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME ( μs)
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
Plastic Medium-Power Complementary Silicon Transistors
Designed for general−purpose amplifier and low−speed switching applications.
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
PD, POWER DISSIPATION (WATTS)
3.0 60 2.0 40 1.0 20
TC TA
00 0 Leabharlann Baidu0 40 60 80 100 120 140 160 T, TEMPERATURE (°C)
RC TUT
SCOPE
V2 approx
RB
+ 8.0 V
0
51
D1
≈ 8.0 k ≈ 120
V1 approx
-12 V
25 ms
tr, tf ≤ 10 ns DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127
© Semiconductor Components Industries, LLC, 2011
1
September, 2011 − Rev. 8
http://oneic.com/
Publication Order Number: TIP120/D
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
TIP122 TIP122G
TIP125 TIP125G
TIP126 TIP126G
TIP127 TIP127G
TA TC 4.0 80
Package
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
− Peak
VCEO VCB VEB IC
60
80
100
Vdc
60
80
100
Vdc
5.0
Vdc
5.0
Adc
8.0
Base Current
Total Power Dissipation @ TC = 25°C Derate above 25°C
IB
120
mAdc
PD
65
W
0.52
W/°C
Total Power Dissipation @ TA = 25°C Derate above 25°C
100
−
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICEO
mAdc
−
0.5
PD
2.0
W
0.016
W/°C
Unclamped Inductive Load Energy (Note 1)
E
50
mJ
Operating and Storage Junction, Temperature Range THERMAL CHARACTERISTICS
Characteristic
TJ, Tstg Symbol
BASE COLLECTOR EMITTER COLLECTOR
TIP12xG AYWW
TIP12x x A Y WW G
= Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg:
VCC - 30 V
1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA
Figure 3. Switching Times Test Circuit
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
COLLECTOR
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 120
≈ 8.0 k ≈ 120
EMITTER
EMITTER
Figure 1. Darlington Circuit Schematic
ORDERING INFORMATION Device
TIP120 TIP120G
TIP121 TIP121G
VBE(on)
−
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
hfe
4.0
−
−
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available*
−
0.5
−
0.5
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0)
TIP120, TIP125 TIP121, TIP126 TIP122, TIP127
ICBO
mAdc
http://onsemi.com
DARLINGTON 5 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
MARKING DIAGRAM
1 2 3
4
TO−220AB CASE 221A
STYLE 1
STYLE 1: PIN 1. 2. 3. 4.
– 65 to + 150 Max
°C Unit
Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) (IC = 100 mAdc, IB = 0)
VCEO(sus)
Vdc
TIP120, TIP125
60
−
TIP121, TIP126
80
−
TIP122, TIP127
Cob
TIP120, TIP121, TIP122
−
300
pF
−
200
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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http://onsemi.com 2
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
TO−220
TO−220 (Pb−Free)
TO−220
TO−220 (Pb−Free)
Shipping 50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
50 Units / Rail 50 Units / Rail
MAXIMUM RATINGS
Rating
TIP120, TIP121, TIP122,
Symbol
TIP125 TIP126 TIP127
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 12 mAdc) (IC = 5.0 Adc, IB = 20 mAdc)
IEBO hFE VCE(sat)
−
2.0
1000
−
1000
−
−
2.0
−
4.0
mAdc −
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc)
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability. 1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
−
0.2
−
0.2
−
0.2
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 3.0 Adc, VCE = 3.0 Vdc)
Figure 2. Power Derating
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http://onsemi.com 3
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME ( μs)
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)