蚀刻培训教材

30
20 15
20
25
30
35
40
45
50
CONVEYOR SPEED, inches/minute
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET16
l DuPont iTechnologies
Primary Imaging Seminar
ET12
l DuPont iTechnologies
Primary Imaging Seminar
Etchback Schematic 蝕刻示意圖
Overetched 過度蝕刻
Normal Etch 正常蝕刻
Underetched 蝕刻不足
Etch Resist Copper Foil
Undercut 側蝕量
Etcher Uniformity: 3-D Blowup 蝕刻均勻性: 放大的立體圖
PANEL TOP SIDE
CONDUCTOR WIDTH, um
71 69
67 65 63
61 59
TRANSERSE
MACHINE DIRECTION
...Complexity Made Simpler…
http://www.dupont.com/pcm
Primary Imaging Seminar
Acid Etch - Line Width vs. Conveyor Speed
酸性蝕刻 - 線寬與傳動速度
2-SIDE AVERAGE WIDTH (OPTICAL)
乾膜線寬75um
80
CONDUCTOR WIDTH, microns
70 60
50 40
0
TRANSVERSE
MACHINE DIRECTION
線寬: 3 mils 板子尺寸: 18x24 區塊: 8x10
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET10
l DuPont iTechnologies
Primary Imaging Seminar
After Resist Development 乾膜顯影後
...Complexity Made Simpler…
ET3
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Typical Etchants 典型的蝕刻液
l DuPont iTechnologies
Primary Imaging Seminar
Etching 蝕刻
...Complexity Made Simpler…
ET1
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
ET19
l DuPont iTechnologies
Primary Imaging Seminar
Cupric Chloride Etchant 氯化銅蝕刻液
Chemistry 化學反應 Critical Variable 重要變數 Process Controls 製程控製 Productivity and Fine Line Variable 產量和細線路的變數 Performance Ratings 性能等級
http://www.dupont.com/pcm
ET17
l DuPont iTechnologies
Primary Imaging Seminar
Acid Etch – Etch Factor vs. Overetch 酸性蝕刻 – 蝕刻因子與過度蝕刻
ETCH FACTOR
ETCH FACTOR vs. OVERETCH AMOUNT
t X
ETCH FACTOR =t/X
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET14
l DuPont iTechnologies
Primary Imaging Seminar
Minimizing Undercut 降低側蝕量
Chemically 化學 Process Variables 製程變數 Artwork Compensation 底片補償值 Thinner Copper 薄銅
...Complexity Made Simpler…
ET6
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Oscillating Spray Mechanism (噴灑擺動機構)
INTERLOCKING SINUSOIDAL CURVES OF OSCILLATING SPRAY MECHANISM
5.0
4.5 Y= - 0.2892x2 + 3.2956x + 32.084
4.0 19 IPM Etch Speed (0.483 m/min)
3.5
3.0
A
B
C
D
E
F
G
H
I
J
COLUMN LABEL
...Complexity Made Simpler…
http://www.dupont.com/pcm
Must remove Cu+ to maintain constant etch rate.
Use chlorine gas or hydrogen peroxide to regenerate the ethant
Chlorine: Peroxide:
2CuCl32- + Cl2
Primary Imaging Seminar
Etching Methods 蝕刻方法
Spray Etching Equipment 噴灑蝕刻液設備
Critical Variables 重要之變數
Etchant Performance and Selection Criteria 蝕刻設備的性能及選擇要件
...Complexity Made Simpler…
ET7
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Etching Uniformity: Machine Direction
蝕刻均勻度: 機械方向
7.0
10
9
8ຫໍສະໝຸດ Baidu
7
6
5
4
3
2
1
0
0
5
10 15 20 25
30 35
40 45
OVERETCH AMOUNT, microns
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET18
l DuPont iTechnologies
Primary Imaging Seminar
Cupric Chloride 氯化銅 Alkaline 鹼性 Hydrogen Peroxide 過氧化氫
...Complexity Made Simpler…
ET4
http://www.dupont.com/pcm
l DuPont iTechnologies Etch Process 蝕刻製程
Dielectric
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET13
l DuPont iTechnologies
Primary Imaging Seminar
Etch Factor – Definition (蝕刻因子定義)
CONDUCTOR CROSS-SECTION
65 27 IPM Etch Speed (0.686 m/min)
60
CONDUCTOR WIDTH, micron
55 50
45
Y= 0.0034x2 + 0.6428x + 36.133
40
19 IPM Etch Speed
35
(0.483 m/min)
30
1
2
3
4
5
6
7
8
ROW LABEL
...Complexity Made Simpler…
ET11
l DuPont iTechnologies
Primary Imaging Seminar
Etch Performance and Selection Criteria 蝕刻的性能和選擇要件
Etch Factor and Undercut 蝕刻因子與側蝕量
Galvanic Cell Reaction 電池反應
Acid Etch – Etch Factor vs. Speed 酸性蝕刻 – 蝕刻因子與速度
ETCH FACTOR
ETCH FACTOR vs. CONVEYOR SPEED
10
9
8
7 6
5
4
3
2
1
0
15
20
25
30
35
40
45
50
CONVEYOR SPEED, inches/minute
...Complexity Made Simpler…
Metal Etch Resist Compatibility (Galvanic Cell Reaction) 金屬阻劑的匹配性 (電池反應)
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET15
l DuPont iTechnologies
Etched Conductors 蝕刻後線路
50 um (2 mil) L/S ½-oz. Copper
...Complexity Made Simpler…
ET2
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Galvanic Cell Reaction 電池反應
Also Called Electrochemical Etch 亦稱電化學蝕刻
Au > Ni > Sn > Sn/Pb
(worst)
(best)
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET8
l DuPont iTechnologies
Primary Imaging Seminar
Etching Uniformity: Transverse Direction 蝕刻不均勻: 橫方向
PANEL TOP SIDE (B) MD LINES
70 y= - 0.0283x2 + 1.0341x + 62.743
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET20
l DuPont iTechnologies
Primary Imaging Seminar
Cupric Chloride Basic Chemistry 氯化銅基本化學反應
Cu0 + Cu2 + → 2 Cu+ Cu+ is complexed as CuCl3 2-
Etch Speed 蝕刻速度
Resist Compatibility 乾膜匹配性
System Control and Stability 系統的控制及穩定性
Environmental 環境
Cost 成本
...Complexity Made Simpler…
http://www.dupont.com/pcm
ET9
http://www.dupont.com/pcm
l DuPont iTechnologies Etcher Uniformity: 3-D
Primary Imaging Seminar
蝕刻均勻性:立體圖
CONDUCTOR WIDTHM, um
PANEL TOP SIDE
70 60 50 40 30 20 10
...Complexity Made Simpler…
ET5
http://www.dupont.com/pcm
l DuPont iTechnologies
Primary Imaging Seminar
Critical Variables 重要變數
Chemical Concentration 化學液濃度 Temperature 溫度 Spray Pressure and Pattern 噴灑壓力和圖樣 Conveyor Rate 傳動速率
板子後端 6.5
6.0
PANEL TOP SIDE (B) MD LINES
Y= - 0.214x2 + 2.4107x + 61.655 27 IPM Etch Speed (0.686 m/min)
板子前端
CONDUCTOR WIDTH, MICRONS
5.5 DIRECTION PANEL TRAVELED IN ETCHER