MOSFET 内部培训资料(Silikron)
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Power To Future 苏州硅能半导体科技股份有限公司SuZhou Silikron Semiconductor Corporation
MOSFET Datasheet Parameter&Curve Presentation
PDD
30th Mar 2010
outline
•Power electronic systems
•Power devices and application requirements
•Power device technologies in Si (>99 % of market)-Power diodes These materials constitute confidential information of SILIKRON. These matrials may not be copied or -Thyristor -Bipolar Junction Transistors -Power MOSFET -Insulated Gate Bipolar Transistors (IGBT)
Energy efficient power electronic systems
•Electric power regulated using power electronics
•Significant power losses in semiconductor devices
•Device power losses should be minimized •Power devices and application requirements
-to improve efficiency and save energy -
to reduce system size (market driver)
These materials constitute confidential information of SILIKRON. These matrials may not be copied or •Power device development: minimize power losses –while
fulfilling other requirements
Power electronic systems
These materials constitute confidential information of SILIKRON. These matrials may not be copied or
•
Semiconductor devices key elements in power electronics •Global device market: 12B USD, growth rate ~ 11%
Power semiconductor devices Power devices are switching transistors and diodes
One device per chip or one device per wafer
These materials constitute confidential information of SILIKRON. These matrials may not be copied or •Power integrated circuits (Smart Power) also available
•Power devices available for ~ 1 A –5,000 A and 30 V -10,000
Device type:Planar MOSFET
Trench MOSFET
Super Junction MOSFET
IGBT: Isolation Gate Bipolar Transistor
Power device structure
Technology trends: Rdson perspective
These materials constitute confidential information of SILIKRON. These matrials may not be copied or
Super Junction
Technology trends: switching loss
These materials constitute confidential information of SILIKRON. These matrials may not be copied or
Vertical DMOS-device feature:
Planar DMOS structure introduce:
These materials constitute confidential information of SILIKRON. These matrials may not be copied or Check item after
assembly
Wafer level check item
Vertical DMOS-device feature-Rdson
Rdson: Rdson= R ch+RA+ Rsource+ RJ+ RD+ Rsub +Rwcml
Rsource = Source diffusion resistance
Rch = Channel resistance
RA = Accumulation resistance
RJ = "JFET" component-resistance of the region between the two body regions RD = Drift region resistance
Rsub = Substrate resistance
These materials constitute confidential information of SILIKRON. These matrials may not be copied or